Semiconductor device, and method for manufacturing a semiconductor device.

Abstract

To improve the reliability of semiconductor devices. [Solution] The semiconductor device comprises a semiconductor layer of a first conductivity type provided in an active region and a terminal region, and a channel stop portion provided inside the outer edge of the terminal region. The channel stop portion comprises a first channel stop groove formed extending from the upper surface of the semiconductor layer to the interior, a first impurity portion of a first conductivity type formed on the surface layer of the semiconductor layer outside the first channel stop groove, and a second impurity portion of a first conductivity type formed at the bottom of the first channel stop groove, wherein the impurity concentrations of the first and second impurity portions are higher than those of the semiconductor layer.

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