Light sensor

Abstract

To provide an optical sensor that can detect target light with a simple configuration. [Solution] The optical sensor 2 comprises a superconducting transition edge sensor section 8 made of a high-temperature superconductor that enters an intermediate transition state between a superconducting state and a normal conducting state when pressure is applied, and a diamond anvil cell 4 that applies pressure to the superconducting transition edge sensor section 8. The diamond anvil cell 4 includes a first diamond anvil 18 having a first culet 22, and a second diamond anvil 20 having a second culet 26 arranged opposite the first culet 22 via the superconducting transition edge sensor section 8. When the light to be detected passes through the first diamond anvil 18 and irradiates the superconducting transition edge sensor section 8, the superconducting transition edge sensor section 8 detects a minute temperature change caused by converting the energy of the light to be detected into heat as a large change in the electrical resistance value of the superconducting transition edge sensor section 8.

Description

Technical Field

[0001] The present invention relates to an optical sensor using a superconductor.

Background Art

[0002] Although semiconductors are used in many electronic devices, their performance is expected to have limitations. On the other hand, electronic devices using superconductors have characteristics such as high precision, high speed, and low power consumption, and are expected to greatly exceed the performance of current electronic devices.

[0003] By the way, an optical sensor using a superconductor as a sensor unit is known (see, for example, Patent Document 1). In this optical sensor, a cooling device for cooling the sensor unit formed of a superconductor to near the superconducting transition temperature is used.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the above-described conventional optical sensor, for example, it is necessary to install a cooling device that cools to an extremely low temperature (absolute temperature: 4K) using expensive liquid helium or the like, resulting in a problem that the configuration of the optical sensor becomes large-scale.

[0006] The present invention aims to solve the above-described problems, and its object is to provide an optical sensor using a superconductor that can detect the light to be detected with a simple configuration.

Means for Solving the Problems

[0007] To achieve the above objective, an optical sensor according to one aspect of the present invention comprises a superconducting transition edge sensor section formed of a high-temperature superconductor that enters an intermediate transition state between a superconducting state and a normal conducting state when pressure is applied, for detecting target light, and a light-transmitting diamond anvil cell for applying pressure to the superconducting transition edge sensor section, wherein the diamond anvil cell includes a first diamond anvil having a planar first culet formed at its tip, and a second diamond anvil disposed opposite the first culet via the superconducting transition edge sensor section and having a planar second culet formed at its tip, and when the target light is transmitted through the first diamond anvil or the second diamond anvil and irradiated onto the superconducting transition edge sensor section, the superconducting transition edge sensor section detects the temperature change caused by converting the energy of the target light into heat as a change in the electrical resistance value of the superconducting transition edge sensor section. [Effects of the Invention]

[0008] According to one aspect of the present invention, a light to be detected can be detected with a simple configuration. [Brief explanation of the drawing]

[0009] [Figure 1] This is a cross-sectional view of the main part of the optical sensor according to the embodiment. [Figure 2] This is a close-up cross-sectional view of the main part of the optical sensor, showing the area enclosed by the dashed line in Figure 1. [Figure 3] This is a side view showing the first diamond anvil according to an embodiment. [Figure 4] This is an enlarged plan view showing the first culet and the first bevel of the first diamond anvil according to the embodiment. [Figure 5] This is a side view showing a second diamond anvil according to an embodiment. [Figure 6] This is a perspective view showing the tip portions of the first diamond anvil and the second diamond anvil according to the embodiment. [Figure 7] This graph illustrates the electrical characteristics of the superconducting transition edge sensor portion according to the embodiment. [Figure 8] This is a plan view showing a superconducting transition edge sensor according to a modified example 1 of the embodiment. [Figure 9] This is a plan view showing a superconducting transition edge sensor according to a modified example 2 of the embodiment. [Figure 10] This is a plan view showing a superconducting transition edge sensor according to a modified example 3 of the embodiment. [Modes for carrying out the invention]

[0010] Embodiments of the present invention will be described in detail below with reference to the drawings. The embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement positions of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention. Furthermore, components in the following embodiments that are not described in an independent claim will be described as optional components.

[0011] (Embodiment) [1. Configuration of the light sensor] First, the configuration of the optical sensor 2 according to the embodiment will be described with reference to Figures 1 to 6. Figure 1 is a cross-sectional view of the main part of the optical sensor 2 according to the embodiment. Figure 2 is a cross-sectional view of the main part showing an enlarged view of the area enclosed by the dashed line of the optical sensor 2 in Figure 1. Figure 3 is a side view showing the first diamond anvil 18 according to the embodiment. Figure 4 is a plan view showing an enlarged view of the first culet 22 and the first bevel 24 of the first diamond anvil 18 according to the embodiment. Figure 5 is a side view showing the second diamond anvil 20 according to the embodiment. Figure 6 is a perspective view showing the tip portions of the first diamond anvil 18 and the second diamond anvil 20 according to the embodiment.

[0012] As shown in FIGS. 1 to 6, the optical sensor 2 includes a diamond anvil cell 4, a gasket 6, a superconducting transition edge sensor unit 8, and four electrode units 10, 12, 14, 16 (10 to 16). For convenience of explanation, in FIGS. 1 and 2, only the components other than the diamond anvil cell 4 are shown in cross section.

[0013] As shown in FIGS. 1 and 2, the diamond anvil cell 4 is a uniaxial pressure device for applying high pressure (for example, a pressure of 100 GPa or more) from both sides in the uniaxial direction (the vertical direction in FIG. 1) to the superconducting transition edge sensor unit 8. The diamond anvil cell 4 has light transmittance and is, for example, transparent. Thereby, the diamond anvil cell 4 can transmit the detection target light (shown as a dot pattern in FIG. 1) irradiated from an external light source (not shown).

[0014] The diamond anvil cell 4 has a first diamond anvil 18 and a second diamond anvil 20. The first diamond anvil 18 and the second diamond anvil 20 are arranged such that their respective tip portions face each other. In FIG. 1, the first diamond anvil 18 is arranged above the second diamond anvil 20.

[0015] For example, a force is applied to the first diamond anvil 18 and the second diamond anvil 20 in a direction approaching each other by an actuator (not shown). Thereby, a high pressure is applied to the sample (superconducting transition edge sensor unit 8) arranged between the tip portion of the first diamond anvil 18 and the tip portion of the second diamond anvil 20 from both sides in the uniaxial direction.

[0016] As shown in FIG. 3, the first diamond anvil 18 is a bevel-type diamond anvil having translucency, and is formed, for example, by cutting a diamond single crystal into a substantially conical shape and polishing the surface of the cut substantially conical diamond. The first diamond anvil 18 has a first culet 22 and a first bevel 24. For convenience of explanation, in FIG. 3, the region (the first culet 22 and the first bevel 24) surrounded by the broken line in the first diamond anvil 18 is enlarged and shown below the first diamond anvil 18.

[0017] The first culet 22 is a plane formed at the tip of the first diamond anvil 18. The first culet 22 is arranged perpendicular to the central axis of the first diamond anvil 18. As shown in FIG. 4, the first culet 22 is formed, for example, in an octagonal shape in plan view. The smaller the area of the first culet 22 (that is, the shorter the outer diameter D1 of the first culet 22), the greater the pressure applied to the superconducting transition edge sensor unit 8 can be.

[0018] Here, the outer diameter D1 of the first culet 22 is preferably 30 μm to 70 μm. When the outer diameter D1 is shorter than 30 μm, it becomes difficult to form the superconducting transition edge sensor unit 8 on the first culet 22. When the outer diameter D1 is longer than 70 μm, it becomes difficult to apply a high pressure to the superconducting transition edge sensor unit 8.

[0019] The first bevel 24 is an inclined surface that inclines from the outer peripheral edge (each side of the octagon) of the first culet 22 at a gentle inclination angle (for example, about 8°) with respect to the first culet 22. As shown in FIG. 4, the shape of the outer peripheral edge of the first bevel 24 is formed, for example, in an octagonal shape in plan view. The outer diameter D2 of the first bevel 24 is, for example, about 300 μm.

[0020] As shown in Figure 5, the second diamond anvil 20 has a shape that is the inverted version of the first diamond anvil 18. That is, the second diamond anvil 20 is a translucent bevel-type diamond anvil. The second diamond anvil 20 is formed, for example, by cutting a diamond single crystal into a substantially conical shape and polishing the surface of the cut substantially conical diamond.

[0021] The second diamond anvil 20 has a second culet 26 and a second bevel 28. For illustrative purposes, in Figure 5, the area enclosed by the dashed line (the second culet 26 and the second bevel 28) of the second diamond anvil 20 is shown enlarged from above.

[0022] The second culet 26 is a plane formed at the tip of the second diamond anvil 20. The second culet 26 is positioned perpendicular to the central axis of the second diamond anvil 20. In plan view, the second culet 26 is formed, for example, in an octagonal shape. The smaller the area of ​​the second culet 26 (i.e., the shorter the outer diameter D3 of the second culet 26), the greater the pressure that can be applied to the superconducting transition edge sensor portion 8. Here, similar to the first culet 22, the outer diameter D3 of the second culet 26 is preferably 30 μm to 70 μm. As shown in Figure 6, the second culet 26 is positioned so as to face the first culet 22 via the superconducting transition edge sensor portion 8 and so as to be parallel to the first culet 22.

[0023] The second bevel 28 is an inclined surface that slopes from the outer edge (each side of the octagon) of the second culette 26 at a gentle angle of inclination (for example, about 8°) relative to the second culette 26. The shape of the outer edge of the second bevel 28 is, for example, an octagon in plan view. The outer diameter D4 of the second bevel 28 is, for example, about 300 μm.

[0024] The gasket 6 is made of a metal such as rhenium and is sandwiched between the tip of the first diamond anvil 18 and the tip of the second diamond anvil 20. The gasket 6 is for holding the sample (superconducting transition edge sensor part 8) when high pressure is applied by the diamond anvil cell 4 and for maintaining the pressure in the sample chamber. As shown in Figure 2, the gasket 6 is formed in a plate shape and has a through hole 30 in its center. The through hole 30 is formed in a circular shape in plan view and penetrates the gasket 6 in its thickness direction (vertical direction in Figure 2).

[0025] One opening of the through-hole 30 (the upper opening in Figure 2) is sealed by being pressed against the first culet 22 and the first bevel 24 of the first diamond anvil 18. The other opening of the through-hole 30 (the lower opening in Figure 2) is sealed by being pressed against the second culet 26 and the second bevel 28 of the second diamond anvil 20. As a result, a sealed space is formed inside the through-hole 30 of the gasket 6.

[0026] As shown in Figure 2, an electrical insulating layer 32 is formed in the sealed space inside the through-hole 30 of the gasket 6. The electrical insulating layer 32 is also formed between the gasket 6 and the four electrode portions 10-16, and between the gasket 6 and the four conductors 34, 36, 38, 40 (34-40) (described later). The electrical insulating layer 32 is made of an electrical insulating material such as magnesium oxide or boron nitride, and electrically insulates the gasket 6 from the four electrode portions 10-16, and also from the gasket 6 from the four conductors 34-40. An opening 42 is formed at the radial center of the electrical insulating layer 32, defining a sample chamber for arranging the superconducting transition edge sensor portion 8. The opening 42 is filled with a pressure medium, such as sodium chloride, to transmit the high pressure applied from the diamond anvil cell 4 to the superconducting transition edge sensor portion 8. The opening 42 is also filled with a hydrogen source, such as ammonia borane.

[0027] The superconducting transition-edge sensor unit 8 is a superconducting transition-edge sensor (TES) for detecting the target light transmitted through the diamond anvil cell 4. The target light detected by the superconducting transition-edge sensor unit 8 is, for example, broadband light from visible light to near-infrared, and may be in the photon range. As shown in Figures 2 and 4, the superconducting transition-edge sensor unit 8 is formed as a thin film on the first culet 22 of the first diamond anvil 18 and is formed in a circular shape, for example, in a plan view.

[0028] The superconducting transition edge sensor section 8 is made of a high-temperature superconductor that enters an intermediate transition state between the superconducting state and the normal conducting state when high pressure is applied. The high-temperature superconductor is made of a hydrogen compound such as lanthanum hydride or yttrium hydride that has a high superconducting transition temperature. Here, in this specification, "high temperature" means a temperature of 77K or higher in absolute temperature (superconducting transition temperature). Since 77K is the boiling point of liquid nitrogen, in other words, in this specification, "high temperature" means a temperature of 77K or higher in absolute temperature, which is the boiling point of liquid nitrogen. When lanthanum hydride (superconducting transition temperature: 260K) is used as the high-temperature superconductor, the superconducting transition edge sensor section 8 enters an intermediate transition state between the superconducting state and the normal conducting state under high temperature and high pressure conditions of 260K absolute temperature and 170GPa pressure.

[0029] The superconducting transition edge sensor portion 8 is formed as a thin film, for example, as follows. First, a hydrogen source such as ammonia borane or aluminum hydride is sealed in the opening 42 of the electrical insulating layer 32. Next, a sample (metal) which is the raw material for the hydrogen compound is formed as a thin film on the first curette 22 by sputtering or deposition, and the thin film is microfabricated using laser light. Alternatively, a microcircuit may be fabricated using lithography, and then the thin film may be formed by sputtering or deposition, and a sample of the desired shape may be fabricated by lift-off. For easily oxidizable samples, palladium foil is layered as an antioxidant and sputtered or deposited. The thickness of the thin film is preferably, for example, about 100 nm to 1 μm. Then, the sample fabricated as described above is laser heated to hydrogenate the sample and form the superconducting transition edge sensor portion 8 as a thin film. At this time, while forming the superconducting transition edge sensor portion 8 as a thin film, the four electrode portions 10 to 16 may also be formed as thin films using the same material as the superconducting transition edge sensor portion 8.

[0030] In this embodiment, the superconducting transition edge sensor portion 8 is formed as a thin film on the first culet 22 of the first diamond anvil 18. However, the embodiment is not limited to this, and the superconducting transition edge sensor portion 8 may also be formed as a thin film on the second culet 26 of the second diamond anvil 20. In this case, it is preferable that the light to be detected is incident from the second diamond anvil 20 side.

[0031] Furthermore, although the high-temperature superconductor in this embodiment is formed from a hydrogen compound, it is not limited to this, and may be formed from, for example, an iron compound or a copper oxide, or it may contain at least one of a hydrogen compound, an iron compound, and a copper oxide.

[0032] As shown in Figure 4, each of the four electrode portions 10-16 is electrically connected to the superconducting transition edge sensor portion 8 and is formed as a thin film on the first bevel 24. When viewed perpendicular to the first culet 22, the four electrode portions 10-16 extend outward in a cross shape (X shape) from the outer edge of the superconducting transition edge sensor portion 8. Each of the four electrode portions 10-16 is formed of the same material as, for example, the superconducting transition edge sensor portion 8. As in this embodiment, by providing the four electrode portions 10-16 on the first bevel 24, disconnection of the electrode portions 10-16 can be suppressed even when the first culet 22 is made smaller in order to generate high pressure. In addition, the presence of the first bevel 24 (bevel surface) around the flat first culet 22 (culet surface) increases the area in which the circuit including the electrode portions 10-16 can be drawn, which is advantageous in the circuit fabrication process.

[0033] Furthermore, each of the four electrode sections 10-16 is electrically connected to four conductors 34-40. For the sake of explanation, the four conductors 34-40 are shown as dashed lines in Figure 4. Each of the four conductors 34-40 extends from one end of each of the four electrode sections 10-16 (i.e., the end furthest from the superconducting transition edge sensor section 8) and is led out to the outside of the optical sensor 2, where it is electrically connected to a measuring device (not shown). Each of the four conductors 34-40 is formed of a metal foil, such as gold or platinum.

[0034] Here, the measuring device described above is a device for measuring the electrical resistance value (hereinafter simply referred to as "resistance value") of the superconducting transition edge sensor section 8 using the four-terminal method. The measuring device is located outside the optical sensor 2 and is electrically connected to the superconducting transition edge sensor section 8 via four conductors 34-40 and four electrode sections 10-16. The measuring device measures the resistance value of the superconducting transition edge sensor section 8 by measuring the voltage between two of the four conductors 34-40 and measuring the current flowing between the remaining two conductors. With respect to the conductors 34-40, the presence of the first bevel 24 as in this embodiment can suppress the disconnection of the conductors 34-40.

[0035] In this embodiment, the four electrode portions 10-16 are formed on the first bevel 24 of the first diamond anvil 18, but the embodiment is not limited to this. If the superconducting transition edge sensor portion 8 is formed on the second culet 26 of the second diamond anvil 20, the four electrode portions 10-16 may be formed on the second bevel 28 of the second diamond anvil 20. In this case, the orientation of the electrical insulating layer 32 must be the opposite of the orientation shown in Figure 2.

[0036] Furthermore, in this embodiment, each of the four electrode portions 10 to 16 is formed from the same material as the superconducting transition edge sensor portion 8, but the invention is not limited to this, and each of the four electrode portions 10 to 16 may be formed from a different material than the superconducting transition edge sensor portion 8.

[0037] [2. How to use the light sensor] Next, the method of using the optical sensor 2 according to the embodiment will be described with reference to Figures 1 and 7. Figure 7 is a graph for explaining the electrical characteristics of the superconducting transition edge sensor unit 8 according to the embodiment. More specifically, Figure 7(a) is a graph showing the relationship between the change in temperature (absolute temperature) of the superconducting transition edge sensor unit 8 and the change in the resistance value of the superconducting transition edge sensor unit 8. Figure 7(b) is a graph showing the relationship between the presence or absence of irradiation of the light to be detected onto the superconducting transition edge sensor unit 8 and the change in the resistance value of the superconducting transition edge sensor unit 8.

[0038] The following describes the case where lanthanum hydride is used as the high-temperature superconductor forming the superconducting transition edge sensor section 8.

[0039] The optical sensor 2 is placed in an environment of approximately -13°C (260K absolute temperature), and a high pressure of 170 GPa is applied to the superconducting transition edge sensor section 8 by the diamond anvil cell 4. As a result, the superconducting transition edge sensor section 8 enters an intermediate transition state between the superconducting state and the normal conducting state under the high temperature and high pressure environment of 260K absolute temperature and 170 GPa pressure.

[0040] As shown in Figure 7(a), the superconducting transition edge sensor 8 enters a superconducting state below the critical temperature (superconducting transition temperature), and transitions from the superconducting state to the normal conducting state above the critical temperature. At this time, the resistance value of the superconducting transition edge sensor 8 is constant at 0 (Ω) below the critical temperature, and rises sharply from 0 (Ω) above the critical temperature. When the superconducting transition edge sensor 8 is in an intermediate transition state between the superconducting state and the normal conducting state, a small change in the temperature of the superconducting transition edge sensor 8 will appear as a large change in the resistance value of the superconducting transition edge sensor 8.

[0041] In this way, after the superconducting transition edge sensor unit 8 is placed in an intermediate transition state between the superconducting state and the normal conducting state, as shown in Figure 1, light to be detected is irradiated onto the first diamond anvil 18 from a light source positioned above the first diamond anvil 18. The light to be detected from the light source passes through the first diamond anvil 18 and irradiates the superconducting transition edge sensor unit 8. At this time, the superconducting transition edge sensor unit 8 detects the minute temperature change that occurs when the energy of the light to be detected is converted into heat as a large change in the resistance value of the superconducting transition edge sensor unit 8.

[0042] Specifically, as shown in Figures 7(a) and 7(b), when the target light is irradiated onto the superconducting transition edge sensor 8, the temperature of the superconducting transition edge sensor 8 rises slightly, for example, from T0 to T1, and consequently, the resistance value of the superconducting transition edge sensor 8 rises significantly, for example, from R0 to R1. At this time, by measuring the change in the resistance value of the superconducting transition edge sensor 8 using the four-terminal method with the measuring device described above, the presence or absence (or intensity) of the target light can be detected with high sensitivity.

[0043] [3. Effects] In this embodiment, as described above, the superconducting transition edge sensor section 8 is made of a high-temperature superconductor, and high pressure is applied to the superconducting transition edge sensor section 8 by the diamond anvil cell 4. This makes it possible to maintain the superconducting transition edge sensor section 8 in an intermediate transition state between the superconducting state and the normal conducting state in a temperature environment close to room temperature.

[0044] As a result, the large-scale cooling equipment that cools to extremely low temperatures using, for example, expensive liquid helium, as explained in the background technology section, can be omitted, and the target light can be detected with a simple configuration.

[0045] [4. Various variations] In this embodiment, the shape of the superconducting transition edge sensor portion 8 is circular, but it is not limited to this. Various modifications of the shape of the superconducting transition edge sensor portion 8 will be described below.

[0046] [4-1. Variation 1] First, with reference to Figure 8, the superconducting transition edge sensor unit 8A according to the first modified embodiment will be described. Figure 8 is a plan view showing the superconducting transition edge sensor unit 8A according to the first modified embodiment.

[0047] As shown in Figure 8, in this modified example, the superconducting transition edge sensor section 8A is formed in a rectangular shape in plan view. The four electrode sections 10 to 16 are each electrically connected to the four corners of the superconducting transition edge sensor section 8A.

[0048] [4-2. Modification 2] Next, with reference to Figure 9, the superconducting transition edge sensor unit 8B according to the modified embodiment 2 will be described. Figure 9 is a plan view showing the superconducting transition edge sensor unit 8B according to the modified embodiment 2.

[0049] As shown in Figure 9, in this modified example, the superconducting transition edge sensor portion 8B is formed in a serpentine shape in plan view. This makes it possible to improve the resistance resolution of the superconducting transition edge sensor portion 8B compared to the modified example 1 described above.

[0050] [4-3. Modification 3] Next, with reference to Figure 10, the superconducting transition edge sensor unit 8C according to the third modified embodiment will be described. Figure 10 is a plan view showing the superconducting transition edge sensor unit 8C according to the third modified embodiment.

[0051] As shown in Figure 10, in this modified example, the superconducting transition edge sensor portion 8C is formed in a serpentine shape in plan view. Compared to the modified example 2, the width of the superconducting transition edge sensor portion 8C is smaller (for example, about 5 μm), and the overall length of the superconducting transition edge sensor portion 8C is longer. As a result, the resistance resolution of the superconducting transition edge sensor portion 8B can be further improved compared to the modified example 2.

[0052] (Note) (Technology 1) A light sensor comprising: a superconducting transition edge sensor section formed of a high-temperature superconductor that enters an intermediate transition state between a superconducting state and a normal conducting state when pressure is applied, for detecting target light; and a light-transmitting diamond anvil cell for applying pressure to the superconducting transition edge sensor section, wherein the diamond anvil cell includes a first diamond anvil having a planar first culet formed at its tip, and a second diamond anvil positioned opposite the first culet via the superconducting transition edge sensor section and having a planar second culet formed at its tip, wherein when the target light is transmitted through the first diamond anvil or the second diamond anvil and irradiated onto the superconducting transition edge sensor section, the superconducting transition edge sensor section detects the temperature change caused by converting the energy of the target light into heat as a change in the electrical resistance value of the superconducting transition edge sensor section.

[0053] According to Technology 1, the superconducting transition edge sensor is made of a high-temperature superconductor, and pressure is applied to the superconducting transition edge sensor by a diamond anvil cell. This allows the superconducting transition edge sensor to be maintained in an intermediate transition state between the superconducting and normal conducting states in a temperature environment approaching room temperature. As a result, the large-scale cooling equipment that cools to extremely low temperatures using, for example, expensive liquid helium, as described in the background technology section, can be omitted, and the target light can be detected with a simple configuration.

[0054] (Technology 2) The optical sensor according to Art 1, wherein the high-temperature superconductor comprises at least one of a hydrogen compound, an iron compound, and a copper oxide.

[0055] According to Technology 2, for example, compared to the extremely low superconducting transition temperature of liquid helium, the superconducting transition edge sensor can be maintained in an intermediate transition state between the superconducting state and the normal conducting state in a high-temperature environment approaching room temperature.

[0056] (Technology 3) The optical sensor according to Art 1 or 2, wherein the superconducting transition edge sensor portion is formed as a thin film on the first culet or the second culet.

[0057] According to Technology 3, for example, the superconducting transition edge sensor portion can be easily formed as a thin film on the first or second curette by sputtering or vapor deposition.

[0058] (Technology 4) The optical sensor according to Art 3, wherein the superconducting transition edge sensor portion is formed in a meandering manner on the first culet or the second culet.

[0059] According to Technology 4, the resolution of the resistance value in the superconducting transition edge sensor can be improved.

[0060] (Technology 5) The optical sensor according to Art 3 or 4, wherein the first diamond anvil further includes a first bevel which is an inclined surface inclined from the outer edge of the first culet to the first culet, and the second diamond anvil further includes a second bevel which is an inclined surface inclined from the outer edge of the second culet to the second culet, and the optical sensor further includes an electrode portion which is electrically connected to the superconducting transition edge sensor portion and is formed as a thin film on the first bevel or the second bevel.

[0061] According to Technology 5, for example, the electrode portion can be easily formed as a thin film on the first bevel or the second bevel by sputtering or deposition.

[0062] (Technology 6) The optical sensor according to Technical Reference 5, wherein the electrode portion is formed of the same material as the superconducting transition edge sensor portion.

[0063] According to Technology 6, for example, the superconducting transition edge sensor portion and the electrode portion can be formed as thin films simultaneously by sputtering or vapor deposition.

[0064] (Technology 7) The optical sensor according to Art 5 or 6, wherein four electrode portions are provided, and when viewed from a direction perpendicular to the first culet or the second culet, the four electrode portions extend outward in a cross shape from the superconducting transition edge sensor portion.

[0065] According to Technology 7, the four electrode sections can be easily extended outside the optical sensor.

[0066] (Technology 8) The optical sensor according to any one of the technologies 1 to 7, wherein the outer diameter of the first curette and the second curette is 30 μm to 70 μm.

[0067] According to Technology 8, a superconducting transition edge sensor portion can be easily formed on the first culet or the second culet, and the pressure applied to the superconducting transition edge sensor portion can be increased.

[0068] (Other variations, etc.) Although the optical sensor according to embodiments of the present invention has been described above, the present invention is not limited to these embodiments. For example, each of the above embodiments may be combined. [Industrial applicability]

[0069] This invention can be applied, for example, to an optical sensor using a superconductor. [Explanation of Symbols]

[0070] 2. Light sensor 4 Diamond Anvil Cells 6 Gasket 8,8A,8B,8C Superconducting transition edge sensor section 10,12,14,16 Electrode part 18. The First Diamond Anvil 20. The Second Diamond Anvil 22 The first culette 24 First bevel 26. The second culette 28. Second bevel 30 Through holes 32 Electrical insulating layer 34,36,38,40 Conductor 42 Opening

Claims

1. Formed from a high-temperature superconductor that enters an intermediate transition state between the superconducting and normal conducting states when pressure is applied, the superconducting transition edge sensor section detects the target light, It comprises a diamond anvil cell that is translucent and applies pressure to the superconducting transition edge sensor portion, The aforementioned diamond anvil cell is A first diamond anvil having a planar first culet formed at its tip, It includes a second diamond anvil positioned opposite the first culet via the superconducting transition edge sensor portion, and having a planar second culet formed at its tip, When the light to be detected passes through the first diamond anvil or the second diamond anvil and irradiates the superconducting transition edge sensor, the superconducting transition edge sensor detects the temperature change caused by converting the energy of the light to be detected into heat as a change in the electrical resistance value of the superconducting transition edge sensor. Light sensor.

2. The high-temperature superconductor comprises at least one of a hydrogen compound, an iron compound, and a copper oxide. The optical sensor according to claim 1.

3. The superconducting transition edge sensor portion is formed as a thin film on the first curette or the second curette. The optical sensor according to claim 1.

4. The superconducting transition edge sensor portion is formed in a meandering manner on the first culet or the second culet. The optical sensor according to claim 3.

5. The first diamond anvil further includes a first bevel which is an inclined surface that slopes from the outer edge of the first culet toward the first culet, The second diamond anvil further includes a second bevel, which is an inclined surface that slopes from the outer edge of the second culet toward the second culet. The optical sensor further comprises an electrode portion electrically connected to the superconducting transition edge sensor portion and formed as a thin film on the first bevel or the second bevel. The optical sensor according to claim 3.

6. The electrode portion is formed of the same material as the superconducting transition edge sensor portion. The optical sensor according to claim 5.

7. The electrode section is provided in four parts. When viewed from a direction perpendicular to the first or second culet, the four electrode portions extend outward in a cross shape from the superconducting transition edge sensor portion. The optical sensor according to claim 5 or 6.

8. The outer diameters of the first and second curettes are 30 μm to 70 μm. The optical sensor according to claim 1.

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