Semiconductor equipment
The semiconductor device addresses galvanic corrosion by structuring the fuse element with narrower sections and wider connections, coupled with an anti-reflective film, to maintain current capacity and resist corrosion, enhancing reliability.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEIKO INSTR INC
- Filing Date
- 2025-04-22
- Publication Date
- 2026-05-15
AI Technical Summary
Existing semiconductor devices face issues with galvanic corrosion affecting the fuse element, leading to a decrease in the allowable current value due to the formation of an anti-reflective film on the upper layer of a metal film, which is not effectively addressed by current laser cutting methods.
The semiconductor device incorporates a fuse element with a width smaller than the laser beam spot diameter, connected by wider portions, and an anti-reflective film covering the upper layer of the fuse and connection portions, reducing galvanic corrosion and maintaining the allowable current value.
This design minimizes the impact of galvanic corrosion on the fuse element, ensuring the semiconductor device maintains the necessary current capacity and prevents corrosion of the anti-reflective film, even under high-temperature and high-humidity conditions.
Smart Images
Figure 2026079678000001_ABST