OLED panel with advanced subpixel overhang

Abstract

Subpixel circuits are formed to increase the number of pixels per inch and improve OLED performance. [Solution] The structure includes a substrate, a plurality of adjacent pixel definition layer (PDL) structures, and a plurality of subpixels, each subpixel including adjacent first and second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light-emitting diode (OLED) material, and a cathode. Each first overhang is defined by a main structure, which is located on a base structure placed on the PDL structure and extends laterally through the base structure. Each second overhang is defined by a superstructure, which is located on the main structure and extends laterally through the main structure. The HIL material is located in contact with the anode and below the adjacent first overhang. The additional OLED material is located on the HIL material and extends below the first overhang.

Description

Technical Field

[0001] The embodiments described herein generally relate to displays. More particularly, the embodiments described herein relate to subpixel circuits and methods of forming subpixel circuits that can be used in displays such as organic light emitting diode (OLED) displays.

Background Art

[0002] Input devices including display devices can be used in various electronic systems. An organic light emitting diode (OLED) is a light emitting diode (LED) that is a film of an organic compound in which an emissive electroluminescent layer emits light in response to an electric current. An OLED device is classified as a bottom emission device when the emitted light passes through a transparent or semi-transparent lower electrode and a substrate on which the panel is manufactured. A top emission device is classified based on whether the light emitted from the OLED device exits through a lid added after the device is manufactured. OLEDs are currently used to fabricate display devices for many electronic devices. Current electronic device manufacturers are miniaturizing these display devices while providing higher resolutions than just a few years ago.

[0003] The patterning of OLED pixels is currently based on processes that limit panel size, pixel resolution, and substrate size. It is necessary to use photolithography to pattern pixels rather than using a fine metal mask. Currently, the patterning of OLED pixels requires the lift-off of organic materials after the patterning process. When lift-off is performed, problems with particles that degrade OLED performance remain due to the organic materials. Therefore, there is a need in the art for subpixel circuits and methods of forming subpixel circuits to increase the pixels per inch and improve OLED performance.

Summary of the Invention

[0004] In one embodiment, a device is provided. The device includes a substrate and a plurality of adjacent pixel definition layer (PDL) structures disposed on the substrate. Each PDL structure includes a top surface and a plurality of subpixels. Each subpixel includes an adjacent first overhang, each first overhang defined by a body extension of a body structure extending laterally through the base structure. The base structure is disposed on the top surface of the PDL structure, and the body structure is disposed on the base structure. An adjacent second overhang is defined by an upper extension of a superstructure extending laterally through the overhang portion of the body extension. The superstructure is disposed on the body structure. The subpixel further includes an anode and a hole injection layer (HIL) material disposed on the anode in contact with the anode and below the adjacent first overhang. Furthermore, an additional organic light-emitting diode (OLED) material is disposed on the HIL material. The additional OLED material is disposed on a first portion of the body extension, and the cathode is disposed on the additional OLED material. The cathode extends beneath the adjacent second overhang and contacts the second portion of the main extension.

[0005] In another embodiment, a device is provided. The device has a plurality of subpixels, each subpixel comprising a portion of a substrate and at least one metal-containing layer disposed on the substrate. Each adjacent first overhang is defined by a pixel-defining layer (PDL) extension of a PDL structure that extends laterally through the base structure. The base structure is disposed on the upper surface of at least one metal-containing layer. The PDL extension is disposed on the base structure, and the PDL body of the PDL structure is disposed on the substrate. The body structure is disposed on the upper surface of the PDL structure. Each adjacent second overhang is defined by an upper extension of a superstructure that extends laterally through the overhang portion of the body extension of the body structure. The superstructure is disposed on the body structure, and the body structure is disposed on the PDL structure. A hole injection layer (HIL) material is disposed on at least one metal-containing layer in contact with at least one metal-containing layer and below the adjacent first overhang. An additional organic light-emitting diode (OLED) material is placed on the HIL material. The additional OLED material is placed on the first portion of the main body extension structure. A cathode is placed on the additional OLED material, and the cathode extends under an adjacent second overhang and contacts the second portion of the main body extension structure.

[0006] In another embodiment, a device is provided. The device includes a substrate and a plurality of adjacent pixel definition layer (PDL) structures disposed on the substrate. A plurality of adjacent overhang structures are disposed on the upper surface of the PDL structures. Each overhang structure includes a base structure disposed on the upper surface of the PDL structures, a body structure disposed on the base structure, and a superstructure disposed on the base structure. The base structure includes a non-conductive material. The body structure includes a conductive material. The superstructure includes an upper extension that extends laterally through the body structure. The device further includes a plurality of subpixels, each subpixel including an anode, a hole injection layer (HIL) material disposed on the anode in contact with the anode, an additional organic light-emitting diode (OLED) material disposed on the HIL material, and a cathode disposed on the additional OLED material. The HIL material extends below the upper extension and contacts a first portion of the non-conductive material of the base structure. The cathode is positioned on an additional OLED material, extending beneath an adjacent overhang and contacting the conductive material at the sidewall of the main structure.

[0007] In yet another embodiment, a device is provided. The device includes a substrate, a plurality of first adjacent pixel definition layer (PDL) structures disposed on the substrate, a plurality of adjacent overhang structures disposed on the upper surface of the first PDL structures, and a plurality of subpixels. Each of the overhang structures includes a second PDL structure containing a nonconductive material disposed on the upper surface of the first PDL structure, a body structure containing a conductive material disposed on the upper part of the second PDL structure, and a superstructure disposed on the body structure, the superstructure including an upper extension that extends laterally through the body structure. Each of the plurality of subpixels includes an anode, a hole injection layer (HIL) material disposed on the anode in contact with the anode, an additional organic light-emitting diode (OLED) material disposed on the HIL material, and a cathode disposed on the additional OLED material. The HIL material extends below the upper extension and in contact with the nonconductive material of the second PDL structure. The cathode extends below the adjacent overhang structure.

[0008] To provide a more detailed understanding of the above-listed features of this disclosure, the above-briefly summarized disclosure will be described in more detail, with some reference to embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings are illustrative embodiments only and should not be considered limiting to the scope of this disclosure, as other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0009] [Figure 1A] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Figure 1B] This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment. [Figure 1C] This is a schematic top cross-sectional view of a subpixel circuit having a dot-type architecture according to an embodiment. [Figure 1D] This is a schematic cross-sectional view of a subpixel circuit having a line-type architecture according to an embodiment. [Figure 2] This is a flowchart of a method for forming subpixels according to an embodiment. [Figure 3A-3D] This is a schematic cross-sectional view of a substrate in a method for forming subpixels according to an embodiment. [Figure 4A] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Figure 4B] This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment. [Figure 5] This is a flowchart of a method for forming subpixels according to an embodiment. [Figure 6A] This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 6B] This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 6C] This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 6D]This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 6E] This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 6F] This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment. [Figure 7A] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Figure 7B] This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment. [Figure 8A] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Figure 8B] This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment. [Modes for carrying out the invention]

[0010] To facilitate understanding, where possible, the same reference numerals are used to refer to the same elements common to the drawings. Even without specific descriptions, it is assumed that elements disclosed in one embodiment can be usefully used in other embodiments.

[0011] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits and methods for forming subpixel circuits that can be used in displays such as organic light-emitting diode (OLED) displays. In various embodiments, the subpixels use advanced overhang structures to improve the functionality of the display.

[0012] In one embodiment, the device includes a substrate and a plurality of adjacent pixel definition layer (PDL) structures disposed on the substrate. Each PDL structure includes a top surface and a plurality of subpixels. Each subpixel includes an adjacent first overhang, each first overhang defined by a body extension of a body structure extending laterally beyond the base structure. The base structure is disposed on the top surface of the PDL structure, and the body structure is disposed on the base structure. The body structure is made of a conductive material, and the base structure is made of a metal-containing material or an inorganic material. An adjacent second overhang is defined by an upper extension of a superstructure extending laterally beyond the overhang portion of the body extension. The superstructure is made of an inorganic material and is disposed on the body structure. The subpixel further includes an anode and a hole injection layer (HIL) material disposed on the anode in contact with the anode. The HIL material is disposed below the adjacent first overhang. Furthermore, additional organic light-emitting diode (OLED) material is placed on the HIL material and extends below the adjacent first overhang. The additional OLED material is placed on the first portion of the body extension, and the cathode is placed on the additional OLED material. The cathode extends below the adjacent second overhang and contacts the second portion of the body extension.

[0013] In another embodiment, the device has a plurality of subpixels, each subpixel comprising a portion of the substrate and at least one metal-containing layer disposed on the substrate. Each adjacent first overhang is defined by a pixel-defining layer (PDL) extension of a PDL structure that extends laterally through the base structure. The base structure is disposed on the upper surface of at least one metal-containing layer. The base structure is made of a metal-containing material or an inorganic material. The PDL extension is disposed on the base structure, and the PDL body of the PDL structure is disposed on the substrate. The body structure is disposed on the upper surface of the PDL structure. Each adjacent second overhang is defined by an upper extension of a superstructure that extends laterally through the overhang portion of the body extension of the body structure. The superstructure is disposed on the body structure, and the body structure is disposed on the PDL structure. The superstructure is made of an inorganic material, and the body structure is made of a conductive material. A hole injection layer (HIL) material is positioned on at least one metal-containing layer in contact with at least one metal-containing layer and below an adjacent first overhang. An additional organic light-emitting diode (OLED) material is positioned on the HIL material and extends below the adjacent first overhang. The additional OLED material is positioned on a first portion of the main body extension structure. A cathode is positioned on the additional OLED material and extends below an adjacent second overhang and in contact with a second portion of the main body extension structure.

[0014] In another embodiment, the device includes a substrate and a plurality of adjacent pixel definition layer (PDL) structures disposed on the substrate. A plurality of adjacent overhang structures are disposed on the upper surface of the PDL structures. Each overhang structure includes a base structure disposed on the upper surface of the PDL structures, a body structure disposed on the base structure, and a superstructure disposed on the body structure. The base structure includes a non-conductive material. The body structure includes a conductive material. The superstructure includes an upper extension that extends laterally through the base structure. The device further includes a plurality of subpixels, each subpixel including an anode, a hole injection layer (HIL) material disposed on the anode in contact with the anode, an additional organic light-emitting diode (OLED) material disposed on the HIL material, and a cathode disposed on the additional OLED material. The HIL material extends below the superextension and contacts a first portion of the non-conductive material of the base structure. The cathode is disposed on the additional OLED material and extends below the adjacent overhang. The cathode contacts the conductive material at the side wall of the main structure.

[0015] In yet another embodiment, the device includes a substrate, a plurality of first adjacent pixel definition layer (PDL) structures disposed on the substrate, a plurality of adjacent overhang structures disposed on the upper surface of the first PDL structures, and a plurality of subpixels. Each of the overhang structures includes a second PDL structure disposed on the upper surface of the first PDL structures. The second PDL structures include a non-conductive material. A body structure is disposed on top of the second PDL structures, and the body structure includes a conductive material. A superstructure is disposed on top of the body structure, and the superstructure includes a super extension that extends laterally through the body structure. Each of the plurality of subpixels includes an anode, a hole injection layer (HIL) material disposed on the anode in contact with the anode, an additional organic light-emitting diode (OLED) material disposed on the HIL material, and a cathode disposed on the additional OLED material. The HIL material extends below the super extension and in contact with the non-conductive material of the second PDL structure. The cathode extends below the adjacent overhang structure.

[0016] Each embodiment of the subpixel circuit described herein includes a plurality of subpixels, each subpixel being defined by a permanent adjacent overhang structure within the subpixel circuit. The figure shows two subpixels, each defined by an adjacent overhang structure, but the subpixel circuits of the embodiments described herein include a plurality of subpixels, such as two or more subpixels. Each subpixel has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel emits red light when energized, the OLED material of the second subpixel emits green light when energized, and the OLED material of the third subpixel emits blue light when energized.

[0017] The overhangs are permanent to the subpixel circuit and include a superstructure positioned at least on the main structure. Adjacent overhang structures defining each subpixel in the subpixel circuit of the display use evaporation deposition to form the subpixel circuit, and the overhang structures remain in place after the subpixel circuit is formed. Evaporation deposition is used to deposit the OLED material (including the hole injection layer (HIL), hole transport layer (HTL), light emission layer (EML), and electron transport layer (ETL)) as well as the cathode. In one embodiment, the HIL layer has a higher conductivity than the HTL layer. In another embodiment, the HIL layer has a higher energy level than the HTL layer. Optionally, a encapsulation layer may be deposited by evaporation deposition. In embodiments including one or more capping layers, the capping layers are positioned between the cathode and the encapsulation layer. The overhang structures and the evaporation angle set by the evaporation source define the deposition angle, i.e., the overhang structures produce a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source. To deposit at a specific angle, the evaporation source is configured to release the deposit material at a specific angle relative to the overhang structure. The inclusion layer for each subpixel is positioned on the cathode such that the inclusion layer extends along the sidewalls of each adjacent overhang structure, with at least a portion of each of the adjacent overhang structures.

[0018] Figure 1A is a schematic cross-sectional view of a subpixel circuit 100 according to an embodiment. The cross-sectional view in Figure 1A is taken along the cross-sectional line 1”-1” in Figures 1C and 1D. The subpixel circuit 100 includes a substrate 102. A metal-containing layer 104 may be patterned on the substrate 102 and is defined by adjacent pixel definition layer (PDL) structures 126 disposed on the substrate 102. In one embodiment, the PDL structures 126 are disposed on the substrate 102. In one embodiment, the metal-containing layer 104 is pre-patterned on the substrate 102. For example, a metal-containing layer 104 of indium tin oxide (ITO) is pre-patterned on the substrate 102. The metal-containing layer 104 is configured to act as the anode of each subpixel. In one embodiment, the metal-containing layer 104 is a lamination of a first transparent conductive oxide (TCO) layer, a second metal-containing layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal-containing layer. The metal-containing layer 104 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0019] Multiple PDL structures 126 are arranged on the substrate 102. Each PDL structure 126 includes one of the following: an organic material, an organic material with an inorganic coating on top, or an inorganic material. The organic material of the PDL structure 126 includes, but is not limited to, polyimide. The inorganic material of the PDL structure 126 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PDL structures 126 define their respective subpixels and expose the anode (i.e., the metal-containing layer 104) of their respective subpixel circuits 100.

[0020] The subpixel circuit 100 has a plurality of subpixels 106, including at least a first subpixel 108A and a second subpixel 108B. Although the figure shows the first subpixel 108A and the second subpixel 108B, the subpixel circuit 100 of the embodiments described herein may include two or more subpixels 106, such as a third and a fourth subpixel. Each subpixel 106 has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel 108A emits red light when energized, the OLED material of the second subpixel 108B emits green light when energized, the OLED material of the third subpixel emits blue light when energized, and the OLED material of the fourth subpixel emits light of another color when energized.

[0021] Each subpixel 106 includes an overhang structure 110. The overhang structure 110 is permanent to the subpixel circuit. The overhang structure 110 further defines each subpixel 106 of the subpixel circuit 100. Each overhang structure 110 includes an adjacent first overhang 117 and an adjacent second overhang 109. The adjacent first overhang is defined by a body extension 117A (shown in Figure 1B) of the body structure 110A that extends laterally past the base structure 110C. The base structure 110C is positioned on the upper surfaces 103 (shown in Figure 1B) of a plurality of adjacent PDL structures 126. The body structure 110A is positioned on the upper surface 119 of the base structure 110C. The adjacent second overhang 109 is defined by the upper extension 109A (shown in Figure 1B) of the superstructure 110B, which extends laterally past the overhang portion of the main body extension 117A. The superstructure 110B is positioned on the main body structure 110A. In one embodiment, the superstructure 110B is positioned on the main body structure 110A.

[0022] In one embodiment, the overhang structure 110 includes a superstructure 110B made of a non-conductive inorganic material and a body structure 110A made of a conductive inorganic material. In another embodiment, the overhang structure 110 includes a superstructure 110B made of a conductive inorganic material and a body structure 110A made of a conductive inorganic material. The conductive material of the body structure 110A includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof. The inorganic material of the superstructure includes titanium (Ti), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The base structure 110C includes a metal-containing material or an inorganic material. In one example, the metal-containing material is a transparent conductive oxide (TCO) material. The TCO material includes, but is not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof. The overhang structure 110 can remain in place, i.e., is permanent.

[0023] The adjacent first overhang 117 is defined by the body extension 117A. At least the bottom surface 118 of the body structure 110A is wider than the top surface 119 of the base structure 110C, forming the body extension 117A (shown in Figure 1B). The body extension 117A of the body structure 110A forms the first overhang 117, allowing the body structure 110A to shadow the base structure 110C. Shadowing of the first overhang 117 allows the OLED material to evaporate and deposit. The OLED material may include one or more of HIL, HTL, EML, and ETL. The HIL material 150 of the OLED material is placed on the metal-containing layer 104 in contact with the metal-containing layer 104. The HIL material 150 is placed below the adjacent first overhang 117. In one embodiment, the HIL material 150 is different from the material of the main structure 110A, the superstructure 110B, and the base structure 110C. An additional OLED material 112 is placed on the HIL material 150, extending beyond the endpoint of the HIL material 150 and contacting the PDL structure 126 under an adjacent first overhang 117. In one embodiment, the additional OLED material is placed on the HIL material 150. In one embodiment, the additional OLED material 112 is different from the material of the main structure 110A, the main structure 110B, and the base structure 110C. The overhang structure 110 and the evaporation angle set by the evaporation source define the deposition angle, i.e., the overhang structure produces a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source. The first overhang 117 and the evaporation source define the first HIL angle θ of the HIL material 150. HIL1 and the first OLED angle θ of the additional OLED material 112 OLED1 The first HIL angle θ of the HIL material 150 is defined. HIL1 and the first OLED angle θ of the additional OLED material 112 OLED1 This results from an overhang structure and evaporation deposition of HIL material 150 and additional OLED material 112.

[0024] The adjacent second overhang 109 is defined by the upper extension 109A of the upper structure 110B. At least the bottom surface 107 of the upper structure 110B is wider than the upper surface 105 of the main body structure 110A and forms the upper extension 109A (shown in FIG. 1B) of the second overhang 109. The upper structure 110B is disposed on the upper surface 105 of the main body structure 110A. The upper extension 109A of the upper structure 110B forms the second overhang 109 and enables the upper structure 110B to shadow the main body structure 110A. Due to the shadowing of the second overhang 109, each of the HIL material 150, the additional OLED material 112, and the cathode 114 is evaporated and deposited. Each of the HIL material 150 and the additional OLED material 112 is disposed under the second overhang 109. The additional OLED material 112 is further disposed on the first portion 170 of the sidewall 111 of the main body extension 117A of the main body structure 110A. The cathode 114 is disposed on the additional OLED material 112 and extends under the adjacent second overhang 109. The cathode contacts the second portion 172 of the sidewall 111 of the main body extension 117A. The overhang structure 110 and the evaporation angle set by the evaporation source define the deposition angle, that is, the overhang structure provides a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source. The second overhang 109 and the evaporation source define the second HIL angle θ HIL2 of the HIL material 150, the second OLED angle θ OLED2 of the additional OLED material 112, and the cathode angle θ cathode of the cathode 114. The first HIL angle θ HIL2 of the HIL material 150, the second OLED angle θ OLED2 of the additional OLED material 112, and the cathode angle θ cathodeThis arises from the overhang structure and the evaporation angle set by the evaporation source, i.e., the overhang structure causes a shadowing effect during the evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114 at the evaporation angle set by the evaporation source. In one embodiment, the additional OLED material 112 and cathode 114 are in contact with the body extension 117A of the body structure 110A of the overhang structure 110. The HIL material 150 is not in contact with the side wall 111 of the body extension 117A of the body structure 110A.

[0025] In one embodiment, the HIL material 150 is positioned on the upper surface 103 of the metal-containing layer 104 and the PDL structure 126, in contact with them. The HIL material 150 is positioned below adjacent first overhangs 117 and second overhangs so that the HIL material 150 contacts the main body extension 117A. An additional OLED material 112 is positioned on the HIL material 150. In one embodiment, the additional OLED material is positioned on the HIL material 150. The additional OLED material extends below adjacent first overhangs 117 and is positioned on the first portion of the main body extension 117A. In the exemplary embodiments of Figures 1A and 1B, the additional OLED material 112 extends below adjacent overhangs 117, past the first HIL endpoint 161 of the HIL material 150, to contact the PDL structure 126 at the first OLED endpoint 157. In another embodiment, as shown in Figures 4A and 4B, applied to, for example, a subpixel circuit 100, the HIL material 150 extends beyond the first OLED endpoint 157 under an adjacent overhang 117. A portion of the additional OLED material 112 is positioned under the adjacent first overhang 117, separating the HIL material 150 located in the metal-containing layer 104 from the HIL material 150 located in the main body extension 117A.

[0026] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. In one embodiment, the material of the cathode 114 is different from the material of the main body structure 110A, the superstructure 110B, and the base structure 110C. In some embodiments, for example, as shown in Figures 4A and 4B applied to a subpixel circuit 100, the HIL material 150, the additional OLED material 112, and the cathode 114 are arranged on the side wall 113 of the superstructure 110B of the overhang structure 110. In other embodiments, for example, as shown in Figures 4A and 4B applied to a subpixel circuit 100, the HIL material 150, the additional OLED material 112, and the cathode 114 are arranged on the top surface 115 of the superstructure 110B of the overhang structure 110. In the exemplary embodiments shown in Figures 1A and 1B, the HIL material 150, the additional OLED material 112, and the cathode 114 terminate at the side wall 111 of the main body structure 110A, i.e., they are not located on the side wall 113 of the superstructure 110B or on the top surface 115 of the superstructure 110B.

[0027] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or equivalent. The encapsulation layer 116 of each subpixel is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends along the respective sidewalls of the main body structure 110A and the superstructure 110B, with at least a portion of each of the second overhangs 109. The encapsulation layer 116 is positioned on the cathode 114 and extends to contact the cathode 114 on at least a second portion 172 of the sidewall 111 of the main body extension 117A. In some embodiments, the encapsulation layer 116 extends to contact the conductive material of the main body structure 110A on a third portion 173 of the sidewall 111 of the main body extension 117A. In the exemplary embodiments shown in Figures 1A and 1B, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B on the lower surface of the upper extension 109A, the side wall 113 of the superstructure 110B, and the upper surface 115 of the superstructure 110B. In some embodiments, for example, as shown in Figures 4A and 4B applied to a subpixel circuit 100, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B on the lower surface of the upper extension 109A, and extends to be positioned on the HIL material 150, the additional OLED material 112, and the cathode 114 when the HIL material 150, additional OLED material 112, and cathode 114 are positioned on the side wall 113 and upper surface 115 of the superstructure 110B. In some embodiments, for example, as shown in Figures 8A and 8B applied to the subpixel circuit 100, the encapsulation layer 116 terminates at the side wall 111 of the main structure 110A, i.e., it is not located on the side wall 113 of the superstructure 110B of the overhang structure 110, the upper surface 115 of the superstructure 110B, or the lower surface of the upper extension 109A. The encapsulation layer 116 comprises a non-conductive inorganic material such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material.

[0028] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may include an organic material. The second capping layer may include an inorganic material such as lithium fluoride. The first capping layer and the second capping layer can be deposited by evaporation deposition. In another embodiment, the subpixel circuit 100 further includes at least a global passivation layer 120 positioned on the overhang structure 110 and an encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer positioned on each of the overhang structures 110 of the subpixel 106 and positioned between the encapsulation layer 116 and the global passivation layer 120.

[0029] Figure 1B is a schematic cross-sectional view of an overhang structure 110 of a subpixel circuit 100 according to an embodiment. The main extension 117A includes a first lower edge 174 and a first overhang vector 153. The superstructure 110B includes a second lower edge 152 and a second overhang vector 154. The first lower edge 174 extends beyond the first HIL endpoint 161. The first overhang vector 153 is defined by the first lower edge 174 and the PDL structure 126. The HIL material 150 is located on the metal-containing layer 104 and on a portion of the PDL structure 126 and extends below the first overhang 117 to the first HIL endpoint 161. The additional OLED material 112 is placed on top of the HIL material 150 and extends under the first overhang 117, past the first HIL endpoint 161 of the HIL material 150, to the first OLED endpoint 157, so as to contact the PDL structure 126.

[0030] In one embodiment, the second lower edge 152 extends beyond the first lower edge 174. In another embodiment, the first lower edge 174 extends beyond the second lower edge 152. The second overhang vector 154 is defined by the second lower edge 152 and the PDL structure 126. In one embodiment, the HIL material 150 is not placed in the conductive material of the main body structure 110A. In another embodiment, the HIL material 150 is also placed below the second overhang 109, on a portion of the side wall 111 of the main body extension 117A, and extends to the second HIL endpoint 162. The additional OLED material 112 is placed on the HIL material 150 and extends to the second OLED endpoint 158. The additional OLED material 112 contacts the first portion 170 of the side wall 111 of the main body extension 117A. The additional OLED material 112 separates the HIL material 150 located in the main body extension 117A from the HIL material 150 located in the PDL structure 126. This creates a discontinuity between the HIL material 150 located in the metal-containing layer 104 and the HIL material 150 on the side wall 111 of the main body extension 117A. This discontinuity interrupts the direct path through the HIL material 150 from the metal-containing layer 104 to the conductive material of the main body structure 110A. Therefore, the HIL material 150 does not continuously connect the conductive material of the main body structure 110A to the metal-containing layer 104. Consequently, when the input current flows through the metal-containing layer 104 and then through the HIL material 150, the current flows through the additional OLED material 112 to the cathode 114, illuminating the subpixel 106. When the HIL material 150 continuously connects the conductive material of the main structure 110A to the metal-containing layer 104, a portion of the current flows from the HIL material 150 to the main structure 110A, bypassing the additional OLED material 112.

[0031] The HIL material 150 has a first HIL angle θ between the first HIL vector 159 and the first overhang vector 153. HIL1The first HIL vector 159 is defined by the first HIL endpoint 161 extending below the first overhang 117, the first lower edge 174 of the main body extension 117A, and the angle set by the evaporation source. Additional OLED material 112 is placed on the HIL material 150, and a first OLED angle θ is formed between the first OLED vector 155 and the first overhang vector 153. OLED1 The first OLED vector 155 is defined by a first OLED endpoint 157 extending below the main body structure 110A, a first lower edge 174 of the main body structure 110A, and an angle set by the evaporation source.

[0032] The HIL material 150 has a second HIL angle θ between the second HIL vector 160 and the second overhang vector 154. HIL2 The second HIL vector 160 is defined by the second HIL endpoint 162 extending below the second overhang 109, the second lower edge 152 of the upper extension 109A, and the angle set by the evaporation source. Additional OLED material 112 is placed on the HIL material 150, and a second OLED angle θ is formed between the second OLED vector 156 and the second overhang vector 154. OLED2 The second OLED vector 156 is defined by a second OLED endpoint 158 ​​extending below the superstructure 110B, a second lower edge 152 of the upper extension 109A, and an angle set by the evaporation source. Additional OLED material 112 is placed on the first portion 170 of the side wall 111 of the main extension 117A.

[0033] The cathode 114 is located on an additional OLED material 112 in a first portion 170 of the side wall 111 of the main body extension 117A and is located on the PDL structure 126. In some embodiments, the cathode 114 is located in a second portion 172 of the side wall 111 of the main body extension 117A. The cathode 114 has a cathode angle θ between the cathode vector 164 and the second overhang vector 154. cathodeThe cathode vector 164 is defined by the cathode edge 166 extending at least below the superstructure 110B, the second lower edge 152 of the upper extension 109A, and the angle set by the evaporation source. The encapsulation layer 116 is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends at least below the superstructure 110B of the overhang structure 110 and is in contact with the third portion 173 of the side wall 111 of the main extension 117A.

[0034] During the evaporation deposition of the additional OLED material 112, the first lower edge 174 and the second lower edge 152 define the positions of the first OLED endpoint 157 and the second OLED endpoint 158. For example, the additional OLED material 112 evaporates at the maximum OLED angle corresponding to the first OLED vector 155 and the second OLED vector 156, and the first lower edge 174 and the second lower edge 152 ensure that the additional OLED material 112 does not deposit past the first OLED endpoint 157 and the second OLED endpoint 158. During the evaporation of the HIL material 150, the first lower edge 174 and the second lower edge 152 define the positions of the first HIL endpoint 161 and the second HIL endpoint 162. For example, the HIL material 150 evaporates at the maximum HIL angle corresponding to the first HIL vector 159 and the second HIL vector 160, and the first lower edge 174 and the second lower edge 152 ensure that the HIL material 150 does not deposit beyond the first HIL endpoint 161 and the second HIL endpoint 162. In one embodiment, the second HIL endpoint 162 is located on the side wall 111 of the main body extension 117A, allowing the HIL material 150 to deposit on the main body extension 117A. The first HIL endpoint 161 is located on the PDL structure 126. In another embodiment, there is no second HIL endpoint 162, and the first HIL endpoint 161 is located on the PDL structure 126. The HIL material 150 does not deposit on the main body extension 117A. During the evaporation and deposition of cathode 114, the second lower edge 152 of the upper extension 109A defines the position of the cathode edge 166. For example, cathode 114 evaporates at the maximum cathode angle corresponding to the cathode vector 164, and the second lower edge 152 ensures that cathode 114 does not deposit beyond the cathode edge 166. Second OLED angle θ OLED2 This is the cathode angle θ cathode Smaller than. In one embodiment, the first HIL angle θ HIL1 and the second HIL angle θ HIL2 This is the first OLED angle θ OLED and the second θ OLED2 Smaller than each of the following. In another embodiment, the first OLED angle θ OLED and the second OLED angle θ OLED2 This is the first HIL angle θ HIL1and the second HIL angle θ HIL2 It is smaller than that.

[0035] Figure 1C is a schematic top cross-sectional view of a subpixel circuit 100 having a dot architecture 101C according to an embodiment. Figure 1D is a schematic cross-sectional view of a subpixel circuit 100 having a line architecture 101D according to an embodiment. The top cross-sectional views of Figures 1C and 1D are each taken along the section line 1'-1' of Figure 1A. The dot architecture 101C includes a plurality of pixel openings 124A from adjacent PDL structures 126. Each of the pixel openings 124A is surrounded by an overhang structure 110 shown in Figure 1A, which defines each of the subpixels 106 of the dot architecture 101C. The line architecture 101D includes a plurality of pixel openings 124B from adjacent PDL structures 126. Each of the pixel openings 124B is in contact with an overhang structure 110 shown in Figure 1A, which defines each of the subpixels 106 of the line architecture 101D.

[0036] Figure 2 is a flowchart of a method 200 for forming a subpixel circuit 100 according to an embodiment. Figures 3A to 3D are schematic cross-sectional views of a substrate 102 in a method 200 for forming a subpixel circuit 100 according to an embodiment described herein.

[0037] In operation 201, as shown in Figure 3A, the base structure layer 302C, the main structure layer 302A, and the upper structure layer 302B are deposited on the substrate 102. The base structure layer 302C is placed on the PDL structure 126. The main structure layer 302A is placed on the base structure layer 302C. The upper structure layer 302B is placed on the main structure layer 302A. The main structure layer 302A corresponds to the main structure 110A of the overhang structure 110. The upper structure layer 302B corresponds to the upper structure 110B of the overhang structure 110. The base structure layer 302C corresponds to the base structure 110C of the overhang structure 110. The resist 306 is placed and patterned. The resist 306 is placed on the upper structure layer 302B. The resist 306 is either a positive resist or a negative resist. Positive resists include portions of resist that dissolve in the resist developer when exposed to electromagnetic radiation, and the resist developer is added to the resist after a pattern has been written to it using electromagnetic radiation. Negative resists include portions of resist that do not dissolve in the resist developer when exposed to radiation, and the resist developer is added to the resist after a pattern has been written to it using electromagnetic radiation. The chemical composition of the resist 306 determines whether the resist is a positive or negative resist. A portion of the superstructure layer 302B having the resist 306 is patterned to form either a pixel aperture 124A of the dot architecture 101C or a pixel aperture 124B of the line architecture 101D of the first subpixel 108a. The patterning is performed by one of the following processes: photolithography, digital lithography, or laser ablation.

[0038] In operation 202, as shown in Figure 3B, a portion of the superstructure layer 302B exposed by the pixel openings 124A and 124B is removed. The superstructure layer 302B exposed by the pixel openings 124A and 124B can be removed by a dry etching process. Operation 202 forms the superstructure 110B.

[0039] In operation 203, as shown in Figure 3C, portions of the main structural layer 302A and base structural layer 302C exposed by the pixel openings 124A and 124B are removed. The main structural layer 302A and base structural layer 302C exposed by the pixel openings 124A and 124B can be removed by a wet etching process. Operation 203 forms the remaining portion of the overhang structure 110 of the first subpixel 108A. Due to the material of the superstructure layer 302B corresponding to the superstructure 110B, the material of the main structural layer 302A corresponding to the main structure 110A, and the etching selectivity during the etching process to remove the exposed portions of the superstructure layer 302B and main structural layer 302A, the bottom surface 107 of the superstructure 110B becomes wider than the top surface 105 of the main structure 110A, forming the upper extension 109A of the second overhang 109 (shown in Figures 1A and 1B). Due to the material of the main structural layer 302A corresponding to the main structure 110A, the material of the base structural layer 302C corresponding to the base structure 110C, and the etching selectivity during the etching process to remove the exposed portions of the main structural layer 302A and the base structural layer 302C, the bottom surface 118 of the main structure 110A becomes wider than the top surface 119 of the base structure 110C, forming the main body extension 117A of the first overhang 117 (shown in Figures 1A and 1B). Shadowing of the first overhang 109 and the second overhang 117 causes evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114.

[0040] In operation 204, as shown in Figure 3D, the resist 306 is removed from the superstructure 110B, leaving the overhang structure 110.

[0041] In operation 205, the OLED material, cathode 114, and encapsulation layer 116 of the first subpixel 108A are deposited. The OLED material includes HIL material 150 and additional OLED material 112. Shadowing of the second overhang 109 causes evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114, respectively. As further described in the corresponding description in Figure 1B, the overhang structure 110 and the evaporation angle set by the evaporation source determine the first HIL angle θ of the HIL material 150. HIL1 and the second HIL angle θ HIL2 (Shown in Figure 1B) The first OLED angle θ of the additional OLED material 112 OLED1 and the second θ OLED2 (As shown in Figure 1B), and the cathode angle θ of cathode 114. cathode The first HIL angle θ of the HIL material 150 is defined (as shown in Figure 1B). That is, the overhang structure 110 produces a shadowing effect during evaporation deposition at an evaporation angle set by an evaporation source configured to release the deposited material at a specific angle relative to the overhang structure 110. HIL1 and the second HIL angle θ HIL2 , the first OLED angle θ of the additional OLED material 112 OLED1 and the second OLED angle θ OLED2 , as well as the cathode angle θ of cathode 114 cathode This is produced from the evaporation deposition of the HIL material 150, the additional OLED material 112, and the cathode 114.

[0042] In one embodiment, an additional OLED material 112 contacts a first portion 170 of the main body extension 117A, and a cathode 114 is positioned on the additional OLED material 112 and contacts a second portion 172 of the main body extension 117A. The HIL material 150 contacts the upper surface 103 (shown in Figure 1B) of the PDL structure 126 and the main body extension 117A. The additional OLED material 112 separates the HIL material 150 of the PDL structure 126 from the HIL material 150 positioned on the main body extension 117A. In another embodiment, the HIL material 150 does not contact the main body extension 117A. An encapsulation layer 116 is deposited on the cathode 114. The encapsulation layer 116 extends to contact the cathode 114 positioned on the additional OLED material 112. The sealing layer 116 extends to contact the cathode 114 at a second portion 172 of the main extension 117A. The sealing layer 116 extends to contact the main structure 110A at a third portion 173 of the main extension 117A. The sealing layer 116 extends to contact the superstructure 110B at the lower surface of the upper extension 109A. The sealing layer 116 extends onto the upper surface 115 of the superstructure 110B. In embodiments including a capping layer, the capping layer is deposited between the cathode 114 and the sealing layer 116. The capping layer can be deposited by evaporation. Embodiments may include a global passivation layer 120 disposed on the sealing layer 116.

[0043] Figure 4A is a schematic cross-sectional view of a subpixel circuit 400 according to an embodiment. In one embodiment, the subpixel circuit 400 includes a line architecture. The line architecture includes a plurality of pixel apertures. Each of the pixel apertures is in contact with an overhang structure 110 that defines each of the subpixels 106 of the line architecture. In another embodiment, the subpixel circuit 400 includes a dot architecture. The dot architecture includes a plurality of pixel apertures. Each of the pixel apertures is surrounded by an overhang structure 110 that defines each of the subpixels 106 of the dot architecture.

[0044] The subpixel circuit 400 includes a substrate 102. At least one metal-containing layer 404 is disposed on the substrate 102 and is defined by adjacent pixel definition layer (PDL) structures 126 disposed on the substrate 102. In one embodiment, at least one metal-containing layer 404 is disposed on the substrate 102 and the PDL structures 126 are disposed on the substrate 102. The at least one metal-containing layer 404 is pre-patterned on the substrate 102, for example, an indium tin oxide (ITO) metal-containing layer 404 is pre-patterned on the substrate 102. The at least one metal-containing layer 404 is a stack of a first transparent conductive oxide (TCO) layer 404B, a second metal-containing layer 404A disposed on the first TCO layer, and a third TCO layer 404C disposed on the second metal-containing layer. The at least one metal-containing layer 404 is configured to act as the anode of each subpixel. The material of the second metal-containing layer 404B includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0045] Multiple PDL structures 126 are arranged on the substrate 102. Each PDL structure 126 includes one of the following: an organic material, an organic material with an inorganic coating on top, or an inorganic material. The organic material of the PDL structure 126 includes, but is not limited to, polyimide. The inorganic material of the PDL structure 126 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PDL structures 126 define their respective subpixels and expose the anode (i.e., the metal-containing layer 404) of each subpixel in the subpixel circuit 400.

[0046] The subpixel circuit 400 has a plurality of subpixels 106, including at least a first subpixel 108A and a second subpixel 108B. Although the figure shows the first subpixel 108A and the second subpixel 108B, the subpixel circuit 400 of the embodiments described herein may include two or more subpixels 106, such as a third and a fourth subpixel. Each subpixel 106 has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel 108A emits red light when energized, the OLED material of the second subpixel 108B emits green light when energized, the OLED material of the third subpixel emits blue light when energized, and the OLED material of the fourth subpixel emits light of another color when energized.

[0047] The overhang structure 110 is permanent to the subpixel circuit 400. The overhang structure 110 further defines each subpixel 106 of the subpixel circuit 400. The overhang structure 110 includes adjacent first overhangs 117 and adjacent second overhangs 109. Each of the first overhangs 117 is defined by PDL extensions 126A (shown in Figure 4B) of a plurality of adjacent PDL structures 126 that extend laterally through the base structure 110C. The base structure 110C is located on the upper surface of the metal-containing layer 404, and the PDL extensions 126A are located on the base structure 110C. In one embodiment, the PDL extensions 126A are located on the base structure 110C. The PDL structure 126 further includes a PDL body 126B, which is located on the substrate 102. The overhang structure 110 further includes a main body structure 110A disposed on the upper surface 103 (shown in Figure 4B) of the PDL structure 126. The second overhang 109 further includes a superstructure 110B disposed on at least the main body structure 110A. In one embodiment, the superstructure 110B is disposed on the main body structure 110A. In one embodiment, the overhang structure 110 includes a superstructure 110B made of a non-conductive inorganic material and a main body structure 110A made of a conductive inorganic material. In another embodiment, the overhang structure 110 includes a superstructure 110B made of a conductive inorganic material and a main body structure 110A made of a conductive inorganic material. The conductive material of the main body structure 110A includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof. The inorganic material of the superstructure includes titanium (Ti), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The base structure 110C includes a metal-containing material or an inorganic material. In one example, the metal-containing material is a transparent conductive oxide (TCO) material. The TCO material includes, but is not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof. The overhang structure 110 can remain in place, i.e., is permanent.

[0048] The adjacent first overhang 117 is defined by a PDL extension 126A of a PDL structure 126 that extends laterally through the base structure 110C. At least the bottom surface 127 of the PDL extension 126A is wider than the top surface 119 of the base structure 110C. The base structure 110C is placed on at least one metal-containing layer 404. The PDL extension 126A of the PDL structure 126 forms the first overhang 117, allowing the PDL structure 126 to shadow the at least one metal-containing layer 404. Shadowing of the first overhang 117 causes the OLED material to evaporate and deposit. The OLED material may include one or more of HIL, HTL, EML, and ETL. The HIL material 150 of the OLED material is placed on, in contact with, at least one metal-containing layer 404 and the PDL extension 126A. In one embodiment, the HIL material 150 is different from the materials of the main structure 110A, the superstructure 110B, and the base structure 110C. The HIL material 150 is positioned on at least one metal-containing layer 404 in contact with at least one metal-containing layer 404, positioned below an adjacent first overhang 117, and extending to a first HIL endpoint 161. An additional OLED material 112 is positioned on the HIL material 150 and extends below an adjacent first overhang 117. In one embodiment, the additional OLED material 112 is positioned on the HIL material 150. In an exemplary embodiment, the HIL material 150 extends below an adjacent first overhang 117, past a first OLED endpoint 157, to a first HIL endpoint 161. In another embodiment, as shown in Figures 1A and 1B, applied to, for example, a subpixel circuit 400, the additional OLED material 112 extends under an adjacent first overhang 117, past the first HIL endpoint 161, to contact at least one metal-containing layer 404. In one embodiment, the additional OLED material 112 is different from the material of the main body structure 110A, the main body structure 110B, and the base structure 110C. The first overhang 117 and the evaporation angle set by the evaporation source are the first HIL angle θ of the HIL material 150. HIL1and the first OLED angle θ of the additional OLED material 112 OLED1 The first HIL angle θ of the HIL material 150 is defined. HIL1 and the first OLED angle θ of the additional OLED material 112 OLED1 This results from the overhang structure 110 and the evaporation deposition of the HIL material 150 and additional OLED material 112. Specifically, the overhang structure 110 provides a shadowing effect during evaporation deposition at an evaporation angle set by an evaporation source configured to release the deposited material at a specific angle relative to the overhang structure 110.

[0049] The adjacent second overhang 109 is defined by the upper extension 109A of the superstructure 110B. At least the bottom surface 107 of the superstructure 110B is wider than the top surface 105 of the main structure 110A, forming the upper extension 109A of the second overhang 109. The superstructure 110B is positioned on the top surface 105 of the main structure 110A. The upper extension 109A of the superstructure 110B forms the second overhang 109, allowing the superstructure 110B to shadow the main structure 110A. The shadowing of the second overhang 109 causes the HIL material 150, the additional OLED material 112, and the cathode 114 to evaporate and deposit, respectively. The HIL material 150 is positioned on a portion of the PDL extension 126A. The additional OLED material 112 extends beyond the second HIL endpoint 162 of the HIL material 150 of the PDL extension 126A, contacting the main structure 110A at the second OLED endpoint 158, and is positioned on the first portion 170 of the side wall 111 of the main structure 110A. The cathode 114 is positioned on the additional OLED material 112, extends below the adjacent second overhang 109, and contacts the second portion 172 of the main structure 110A. The second overhang 109 and the evaporation angle set by the evaporation source are aligned with the second HIL angle θ of the HIL material 150. HIL2 , the second OLED angle θ of the additional OLED material 112 OLED2 , and the cathode angle θ of cathode 114 cathode The second HIL angle θ of the HIL material 150 is defined. HIL2, the second OLED angle θ of the additional OLED material 112 OLED2 , and the cathode angle θ of cathode 114 cathode This can result from the overhang structure 110 and the evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114 under the second overhang 109. That is, the overhang structure 110 gives rise to a shadowing effect during evaporation deposition at an evaporation angle set by an evaporation source configured to release the deposited material at a specific angle relative to the overhang structure 110. In one embodiment, the additional OLED material 112 and cathode 114 are in contact with the main structure 110A, while the HIL material 150 is not in contact with the main structure 110A. In another embodiment, the HIL material layer 150, additional OLED material 112, and cathode 114 are in contact with the main structure 110A.

[0050] In one embodiment, the HIL material 150, the additional OLED material 112, and the cathode 114 are positioned on a portion of the side wall 128 of the PDL extension 126A and a portion of the side wall 111 of the main structure 110A. In another embodiment, the HIL material is positioned on a portion of the side wall 128 of the PDL extension 126A but not on the side wall 111 of the main structure 110A. A portion of the additional OLED material 112 positioned below the adjacent first overhang 117 separates the HIL material 150 positioned on at least one metal-containing layer 404 from the HIL material 150 positioned on the PDL extension 126A. The break interrupts the direct path through the HIL material 150 from at least one metal-containing layer 404 to the conductive material of the main structure 110A. Thus, the HIL material 150 does not continuously connect the conductive material of the main structure 110A to at least one metal-containing layer 404. Therefore, when the input current flows through the metal-containing layer 404 and then through the HIL material 150, the current flows through the additional OLED material 112 to the cathode 114, illuminating the subpixel 106. If the HIL material 150 is continuously connected to the conductive material of the main structure 110A from the metal-containing layer 404, then some of the current will flow from the HIL material 150 to the main structure 110A, bypassing the additional OLED material 112. In another embodiment, the HIL material 150 is not located in the PDL extension 126A. Therefore, there is no direct connection from at least one metal-containing layer 404 to the main structure 110A through the HIL material 150, and thus the current flows through the additional OLED material 112 to the cathode 114, illuminating the additional OLED material 112.

[0051] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. In one embodiment, the material of the cathode 114 is different from the material of the main body structure 110A, the superstructure 110B, and the base structure 110C. In the exemplary embodiments shown in Figures 4A and 4B, the HIL material 150, the additional OLED material 112, and the cathode 114 are arranged on the side wall 113 and the top surface 115 of the superstructure 110B of the overhang structure 110. In some embodiments, for example, as shown in Figures 1A and 1B applied to a subpixel 400, the HIL material 150, the additional OLED material 112, and the cathode 114 terminate at the side wall 111 of the main body structure 110A, i.e., they are not arranged on the side wall 113 or the top surface 115 of the superstructure 110B.

[0052] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or equivalent. The encapsulation layer 116 of each subpixel is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends along each sidewall of the overhang structure 110, with the encapsulation layer 116 beneath at least a portion of the overhang structure 110. The encapsulation layer 116 is positioned on the cathode 114 and extends to contact the cathode 114 on at least a second portion 172 of the sidewall 111 of the main body structure 110A. In some embodiments, the encapsulation layer 116 extends to contact the conductive material of the main body structure 110A on a third portion 173 of the sidewall 111 of the main body structure 110A. In the exemplary embodiments shown in Figures 4A and 4B, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B at the lower surface of the upper extension 109A, and extends to be positioned on the HIL material 150, the additional OLED material 112, and the cathode 114 when the HIL material 150, the additional OLED material 112, and the cathode 114 are positioned on the sidewall 113 and the top surface 115 of the superstructure 110B. In some embodiments, for example, as shown in Figures 1A and 1B applied to a subpixel 400, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B at the lower surface of the upper extension 109A, the sidewall 113 of the superstructure 110B, and the top surface 115 of the superstructure 110B. In some embodiments, for example, as shown in Figures 8A and 8B applied to subpixel 400, the encapsulation layer terminates at the side wall 111 of the main structure 110A, i.e., it is not located on the side wall 113 of the superstructure 110B of the overhang structure 110, the upper surface 115 of the superstructure 110B, or the lower surface of the upper extension 109A. The encapsulation layer 116 comprises a non-conductive inorganic material such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material.

[0053] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may include an organic material. The second capping layer may include an inorganic material such as lithium fluoride. The first capping layer and the second capping layer can be deposited by evaporation deposition. In another embodiment, the subpixel circuit 400 further includes at least a global passivation layer 120 positioned on the overhang structure 110 and an encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer positioned on each of the overhang structures 110 of the subpixel 106 and positioned between the encapsulation layer 116 and the global passivation layer 120.

[0054] Figure 4B is a schematic cross-sectional view of the overhang structure 110 of the subpixel circuit 400 according to an embodiment. The PDL extension 126A includes a first lower edge 174 and a first overhang vector 153. The upper extension 117A includes a second lower edge 152 and a second overhang vector 154. The first lower edge 174 extends past the first HIL endpoint 161. The first overhang vector 153 is defined by the first lower edge 174 and at least one metal-containing layer 404. The HIL material 150 is located on at least one metal-containing layer 404 and on a portion of the PDL extension 126A and extends below the first overhang 117 to the first HIL endpoint 161. The additional OLED material 112 is placed on top of the HIL material 150, which extends under the first overhang 117, past the first OLED endpoint 157, to the first HIL endpoint 161.

[0055] In one embodiment, the second lower edge 152 extends beyond the first lower edge 174. In another embodiment, the first lower edge 174 extends beyond the second lower edge 152. The second overhang vector 154 is defined by the second lower edge 152 and the PDL structure 126. Additional OLED material 112 is placed on at least one metal-containing layer 104 and on a portion of the PDL structure 126. In one embodiment, HIL material 150 is placed on at least one metal-containing layer 404 and on a portion of the PDL extension 126A, extending below the second overhang 109 to the second HIL endpoint 162 of the HIL material 150 and onto the main structure 110A below the second overhang 109. Additional OLED material 112 is placed on the HIL material 150 and extends below the second overhang 109, beyond the second HIL endpoint 162 of the HIL material 150 to the main structure 110A. In one embodiment, the additional OLED material is in contact with the main body structure 110A. In another embodiment, the HIL material 150 is positioned under a second overhang 109 on a portion of the side wall 111 of the main body structure 110A. The HIL material 150 is positioned at a second HIL angle θ between the second HIL vector 160 and the second overhang vector 154. HIL2 The second HIL vector 160 is defined by the second HIL endpoint 162 extending below the second overhang 109, the second lower edge 152 of the superstructure 110B, and the angle set by the evaporation source. Additional OLED material 112 is placed on the HIL material 150, and a second OLED angle θ is formed between the second OLED vector 156 and the second overhang vector 154. OLED2 The second OLED vector 156 is defined by a second OLED endpoint 158 ​​extending below the second overhang 109, a second lower edge 152 of the upper extension 117A, and an angle set by an additional OLED material source (not shown). The additional OLED material 112 is placed on the first portion 170 of the side wall 111 of the main body structure 110A.

[0056] The cathode 114 is positioned on an additional OLED material 112. In some embodiments, the cathode 114 is positioned on a second portion 172 of the side wall 111 of the main body structure 110A. The cathode 114 has a cathode angle θ between the cathode vector 164 and the second overhang vector 154. cathode The cathode vector 164 is defined by the cathode edge 166 extending at least below the second overhang 109, the second lower edge 152 of the superstructure 110B, and the angle set by the evaporation source. The encapsulation layer 116 is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends at least below the superstructure 110B of the overhang structure 110 and is in contact with the third portion 173 of the side wall 111 of the main body structure 110A.

[0057] During the evaporation deposition of the additional OLED material 112, the first lower edge 174 and the second lower edge 152 define the positions of the first OLED endpoint 157 and the second OLED endpoint 158, for example, the additional OLED material 112 evaporates at the maximum OLED angle corresponding to the first OLED vector 155 and the second OLED vector 156, and the first lower edge 174 and the second lower edge 152 ensure that the additional OLED material 112 does not deposit past the first OLED endpoint 157 and the second OLED endpoint 158. In embodiments including HIL material 150, the first lower edge 174 and the second lower edge 152 define the positions of the first HIL endpoint 161 and the second HIL endpoint 162, for example, the HIL material 150 evaporates at the maximum HIL angle corresponding to the first HIL vector 159 and the second HIL vector 160, and the first lower edge 174 and the second lower edge 152 ensure that the HIL material 150 does not deposit beyond the first HIL endpoint 161 and the second HIL endpoint 162. In one embodiment, the second HIL endpoint 162 is located on the side wall 111 of the main structure 110A, allowing the HIL material 150 to deposit on the main structure 110A. In another embodiment, the second HIL endpoint 162 is located on the PDL extension 126, and the HIL material 150 does not deposit on the main structure 110A. During the evaporation and deposition of cathode 114, the second lower edge 152 of the superstructure 110B defines the position of the cathode edge 166, for example, cathode 114 evaporates at the maximum cathode angle corresponding to the cathode vector 164, and the second lower edge 152 ensures that cathode 114 does not deposit beyond the cathode edge 166. (Second OLED angle θ) OLED2 This is the cathode angle θ cathode Smaller than. In one embodiment, the first HIL angle θ HIL1 and the second HIL angle θ HIL2 This is the first OLED angle θ OLED and the second OLED angle θ OLED2 Smaller than each of the following. In another embodiment, the first OLED angle θ OLED and the second OLED angle θ OLED2 This is the first HIL angle θ HIL1 and the second HIL angle θ HIL2It is smaller than that.

[0058] Figure 5 is a flowchart of a method 500 for forming a subpixel circuit 100 according to an embodiment. Figures 6A to 6F are schematic cross-sectional views of a substrate 102 in a method 500 for forming a subpixel circuit 400 according to an embodiment described herein.

[0059] In operation 501, as shown in Figure 6A, the main structural layer 602A and the upper structural layer 602B are deposited on the PDL structure 126. The base structural layer 602C is located on at least one metal-containing layer 404. In one embodiment, the metal-containing layer is at least one metal-containing layer 404. The at least one metal-containing layer 404 is a lamination of a first TCO layer 404B, a second metal-containing layer 404A located on the first TCO layer 404B, and a third TCO layer 404C located on the second metal-containing layer 404A. The base structural layer 602C is located on the third TCO layer 404C. At least one metal-containing layer 404 is located on the substrate 102. In one embodiment, at least one metal-containing layer 404 is located on the substrate 102. The PDL structural layer 626 includes a PDL extension 626A and a PDL body 626B. The PDL extension 626A is placed on the base structure layer 602C. The PDL body 626B is placed on the substrate 102. In one embodiment, the PDL body 626B is placed on the substrate 102. The body structure layer 602A is placed on the PDL structure layer 626. The upper structure layer 602B is placed on the body structure layer 602A. The body structure layer 602A corresponds to the body structure 110A of the overhang structure 110. The upper structure layer 602B corresponds to the upper structure 110B of the overhang structure 110. The base structure layer 602C corresponds to the base structure 110C of the overhang structure 110. In one embodiment, a resist 606 is placed and patterned. The resist 606 is placed on the upper structure layer 602B. The resist 606 is a positive resist or a negative resist. Positive resists contain portions of resist that dissolve in the resist developer when exposed to electromagnetic radiation, and the resist developer is added to the resist after a pattern has been written to it using electromagnetic radiation. Negative resists contain portions of resist that do not dissolve in the resist developer when exposed to radiation, and the resist developer is added to the resist after a pattern has been written to it using electromagnetic radiation. The chemical composition of resist 606 determines whether the resist is a positive or negative resist.A portion of the superstructure layer 602B having the resist 606 is patterned to form either a pixel aperture 124A in a dot architecture or a pixel aperture 124B in a line architecture of the first subpixel 108A. The patterning is performed by one of the following processes: photolithography, digital lithography, or laser ablation.

[0060] In operation 502, as shown in Figure 6B, a portion of the superstructure layer 602B exposed by the pixel openings 124A and 124B is removed. The superstructure layer 602B exposed by the pixel openings 124A and 124B can be removed by a dry etching process. Operation 502 forms the superstructure 110B.

[0061] In operation 503, as shown in Figure 6C, a portion of the main structural layer 602A exposed by the pixel openings 124A and 124B is removed. The main structural layer 602A exposed by the pixel openings 124A and 124B can be removed by a wet etching process. Operation 503 forms the superstructure 110B and main structure 110A of the overhang structure 110 of the first subpixel 108A. Due to the material of the superstructure layer 602B corresponding to the superstructure 110B, the material of the main structural layer 602A corresponding to the main structure 110A, and the etching selectivity between the etching processes for removing the exposed portions of the superstructure layer 602B and main structural layer 602A, the bottom surface 107 of the superstructure 110B becomes wider than the top surface 105 of the main structure 110A, forming the upper extension 109A of the second overhang 109 (shown in Figures 4A and 4B). Subsequently, the resist 606 is removed from the superstructure 110B (not shown).

[0062] In operation 504, the resist 608 is positioned and patterned as shown in Figure 6D. The resist 608 is patterned to form either the pixel aperture 124A of the dot architecture 101C or the pixel aperture 124B of the line architecture 101D of the first subpixel 108A. The patterning is performed by one of the following processes: photolithography, digital lithography, or laser ablation. The resist 608 is positioned on the superstructure 110B, the body structure 110A, and the PDL structure layer 626. The PDL structure layer 626 exposed by the resist 608 is removed using a dry etching process.

[0063] In operation 505, as shown in Figure 6E, a portion of the base structure layer 602C exposed by the pixel apertures 124A and 124B is removed. The base structure layer 602C exposed by the resist can be removed by a wet etching process. Due to the material of the base structure layer 602C corresponding to the base structure 110C and the etching selectivity between the etching process for removing the exposed portion of the PDL structure layer 626, the bottom surface 12 of the PDL structure layer 626 becomes wider than the top surface 119 of the base structure 110C, forming the PDL extension 126A of the first overhang 117 (shown in Figures 4A and 4B). Due to shadowing of the first overhang 117, the HIL material 150, additional OLED material 112, and cathode 114 are evaporated and deposited beneath the first overhang.

[0064] In operation 506, the resist 608 is removed from the superstructure 110B, as shown in Figure 6F.

[0065] In operation 507, the OLED material, cathode 114, and encapsulation layer 116 of the first subpixel 108A are deposited. The OLED material includes HIL material 150 and additional OLED material 112. Shadowing of the second overhang 109 causes evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114, respectively. As further described in the corresponding description in Figure 1B, the overhang structure 110 and the evaporation angle set by the evaporation source determine the first HIL angle θ of the HIL material 150. HIL1 and the second HIL angle θ HIL2 (Shown in Figure 4B) The first OLED angle θ of the additional OLED material 112 OLED1 and the second OLED angle θ OLED2 (As shown in Figure 4B), and the cathode angle θ of cathode 114. cathode (Shown in Figure 4B) defines the overhang structure 110, which, during evaporation deposition at an evaporation angle set by an evaporation source configured to release deposited material at a specific angle relative to the overhang structure 110, results in a shadowing effect. The HIL angle of the HIL material 150, the OLED angle of the additional OLED material 112, and the cathode angle of the cathode 114 arise from the evaporation deposition of the HIL material 150, the additional OLED material 112, and the cathode 114.

[0066] An additional OLED material 112 is placed on the first portion 170 of the main body structure 110A, and the cathode 114 is placed on the additional OLED material 112. In one embodiment, the additional OLED material 112 is in contact with the first portion 170 of the main body structure 110A, and the cathode is in contact with the second portion 172 of the main body structure 110A of the overhang structure 110. The HIL material 150 is in contact with the upper surface 103 of the PDL structure 126 and the side wall 128 of the PDL extension 126A. The additional OLED material 112 separates the HIL material 150 of the PDL structure 126 from the HIL material 150 placed on at least one metal-containing layer 104. In one embodiment, the HIL material 150 is placed on at least one metal-containing layer 104. The encapsulation layer 116 is deposited on the cathode 114. The encapsulation layer 116 is located on the cathode 114, which is placed on an additional OLED material 112 in a first portion 170 of the main body structure 110A. In another embodiment, the encapsulation layer 116 is located on the cathode 114 in a second portion 172 of the main body structure 110A. In another embodiment, the encapsulation layer 116 extends to contact the main body structure 110A in a third portion 173 of the main body structure 110A. The encapsulation layer 116 extends to contact the superstructure 110B on the lower surface of the upper extension 109A. The encapsulation layer 116 extends onto the upper surface 115 of the superstructure 110B. In embodiments including a capping layer, the capping layer is deposited between the cathode 114 and the encapsulation layer 116. The capping layer can be deposited by evaporation deposition.

[0067] Figure 7A is a schematic cross-sectional view of a subpixel circuit 700 according to an embodiment. The subpixel circuit 700 includes a substrate 102. In one embodiment, the subpixel circuit 700 includes a line architecture. The line architecture includes a plurality of pixel apertures. Each of the pixel apertures is in contact with an overhang structure 110 that defines each of the subpixels 106 of the line architecture. In another embodiment, the subpixel circuit 700 includes a dot architecture. The dot architecture includes a plurality of pixel apertures. Each of the pixel apertures is surrounded by an overhang structure 110 that defines each of the subpixels 106 of the dot architecture. A metal-containing layer 104 may be patterned on the substrate 102 and defined by adjacent pixel definition layer (PDL) structures 126 disposed on the substrate 102. In one embodiment, the PDL structures 126 are disposed on the substrate 102. The metal-containing layer 104 is pre-patterned on the substrate 102, for example, the substrate 102 is pre-patterned with an indium tin oxide (ITO) metal-containing layer 104. The metal-containing layer 104 is configured to act as the anode of each subpixel. In one embodiment, the metal-containing layer 104 is a lamination of a first transparent conductive oxide (TCO) layer, a second metal-containing layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal-containing layer. The material of the metal-containing layer 104 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0068] Multiple PDL structures 126 are arranged on the substrate 102. Each PDL structure 126 includes one of the following: an organic material, an organic material with an inorganic coating on top, or an inorganic material. The organic material of the PDL structure 126 includes, but is not limited to, polyimide. The inorganic material of the PDL structure 126 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PDL structures 126 define their respective subpixels and expose the anode (i.e., the metal-containing layer 104) of each subpixel in the subpixel circuit 700.

[0069] The subpixel circuit 700 has a plurality of subpixels 106, including at least a first subpixel 108A and a second subpixel 108B. Although the figure shows the first subpixel 108A and the second subpixel 108B, the subpixel circuit 700 of the embodiments described herein may include two or more subpixels 106, such as a third and a fourth subpixel. Each subpixel 106 has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel 108A emits red light when energized, the OLED material of the second subpixel 108B emits green light when energized, the OLED material of the third subpixel emits blue light when energized, and the OLED material of the fourth subpixel emits light of another color when energized.

[0070] The overhang structure 110 is permanent to the subpixel circuit 700. The overhang structure 110 further defines each subpixel 106 of the subpixel circuit 700. The overhang structure 110 includes at least a superstructure 110B disposed on a body structure 110A and a body structure 110A disposed on a base structure 110C. In one embodiment, the superstructure is disposed on the body structure 110A, and the body structure 110A is disposed on the base structure 110C. The base structure 110C is disposed on a PDL structure 126. In one embodiment, the base structure 110C is disposed on the PDL structure 126. The body structure 110A includes a conductive inorganic material. The superstructure 110B includes a polymer material, an inorganic material, or a metallic material. The conductive material of the main body structure 110A includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof. The inorganic material of the superstructure includes titanium (Ti), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The base structure 110C includes a non-conductive material.

[0071] Each adjacent overhang 709 defines an upper extension 109A of the superstructure 110B that extends laterally beyond the base structure 110C and the main body structure 110A. At least the bottom surface 107 of the superstructure 110B is wider than the top surface 105 of the main body structure 110A, forming the upper extension 109A of the overhang 709. The superstructure 110B is positioned on the top surface 105 of the main body structure 110A. The upper extension 109A of the superstructure 110B forms the overhang 709, allowing the superstructure 110B to shadow the main body structure 110A. The overhang structure 110 and the evaporation angle set by the evaporation source define the deposition angle, i.e., the overhang structure 110 produces a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source. Shadowing of the overhang 709 causes evaporation deposition of the OLED material and the cathode 114, respectively. The OLED material may include one or more of HIL, HTL, EML, and ETL. The HIL material 150 of the OLED material is placed on the metal-containing layer 104 in contact with the metal-containing layer 104 and extends to the HIL endpoint 762 of the PDL structure 126. In one embodiment, the HIL material 150 is different from the material of the main structure 110A, the superstructure 110B, and the base structure 110C. An additional OLED material 112 is placed on the HIL material 150. In one embodiment, the additional OLED material 112 is placed on the HIL material 150. In one embodiment, the additional OLED material 112 is different from the material of the main structure 110A, the main structure 110B, and the base structure 110C. The additional OLED material 112 is positioned on the HIL material 150 and extends under the overhang 709, past the HIL endpoint 762 of the HIL material 150 to the OLED endpoint 758, in contact with the first portion 775 of the base structure 110C. The cathode 114 is positioned on the additional OLED material 112 and extends under the adjacent overhang 709 to the cathode edge 166, in contact with the second portion 776 of the base structure 110C. In this embodiment, the additional OLED material 112 and the HIL material 150 do not contact the main structure 110A.In another embodiment, an additional OLED material 112 extends to contact the main body structure 110A, and a cathode 114 is positioned on the additional OLED material 112 and extends to contact the main body portion 110A. The overhang structure 110 and the evaporation angle set by the evaporation source determine the HIL angle θ of the HIL material 150. HIL , additional OLED material 112 OLED angle θ OLED , and the cathode angle θ of cathode 114 cathode Define the HIL angle θ of the HIL material 150. HIL , additional OLED material 112 OLED angle θ OLED , and the cathode angle θ of cathode 114 cathode This can result from the overhang structure 110 and the evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114. That is, the overhang structure 110 produces a shadowing effect during evaporation deposition at an evaporation angle set by an evaporation source configured to release the deposited material at a specific angle relative to the overhang structure 110. In another embodiment, the additional OLED material 112 and cathode 114 are in contact with the main structure 110A of the overhang structure 110, while the HIL material 150 is not in contact with the main structure. In another embodiment, the HIL material 150 is not in contact with any part of the base structure 110C. The discontinuity interrupts the direct path through the HIL material 150 from the metal-containing layer 104 to the conductive material of the main structure 110A. Thus, the HIL material 150 does not continuously connect the conductive material of the main structure 110A to the metal-containing layer 104. Therefore, when the input current flows through the metal-containing layer 104 and then through the HIL material 150, the current flows through the additional OLED material 112 to the cathode 114, illuminating the subpixel 106. If the HIL material 150 is continuously connected to the conductive material of the main structure 110A and the metal-containing layer 104, then some of the current will flow from the HIL material 150 to the main structure 110A, bypassing the additional OLED material 112.

[0072] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. In one embodiment, the material of the cathode 114 is different from the material of the main body structure 110A, the superstructure 110B, and the base structure 110C. In the exemplary embodiments of Figures 7A and 7B, the HIL material 150, the additional OLED material 112, and the cathode 114 are arranged on the side wall 113 of the superstructure 110B of the overhang structure 110 and on the top surface 115 of the superstructure 110B of the overhang structure 110. In some embodiments, for example, as shown in Figures 8A and 8B applied to subpixels 700, the HIL material 150, additional OLED material 112, and cathode 114 terminate at the side wall 111 of the main body structure 110A, i.e., they are not located on the upper surface 115 of the superstructure 110B of the overhang structure 110.

[0073] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or equivalent. The encapsulation layer 116 of each subpixel is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends along each sidewall of the overhang structure 110, with the encapsulation layer 116 beneath at least a portion of the overhang structure 110. The encapsulation layer 116 is positioned on the cathode 114 and extends to contact the cathode 114 on at least a second portion of the sidewall 111 of the main body structure 110A. In some embodiments, the encapsulation layer 116 extends to contact the conductive material of the main body structure 110A. In the exemplary embodiments of 7A and 7B, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B at the lower surface of the upper extension 109A, and extends to be positioned on the HIL material 150, the additional OLED material 112, and the cathode 114 when the HIL material 150, the additional OLED material 112, and the cathode 114 are positioned on the sidewall 113 and the top surface 115 of the superstructure 110B. In some embodiments, for example as shown in Figures 1A and 1B, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B at the lower surface of the upper extension 109A, the sidewall 113 of the superstructure 110B, and the top surface 115 of the superstructure 110B. In some embodiments, for example, as shown in Figures 8A and 8B applied to subpixel 700, the encapsulation layer 116 terminates at the side wall 111 of the main structure 110A, i.e., it is not located on the side wall 113 of the superstructure 110B, the superstructure 110B of the overhang structure 110, or the lower surface of the upper extension 109A. The encapsulation layer 116 comprises a non-conductive inorganic material such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material.

[0074] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may include an organic material. The second capping layer may include an inorganic material such as lithium fluoride. The first capping layer and the second capping layer can be deposited by evaporation deposition. In another embodiment, the subpixel circuit 700 further includes at least a global passivation layer 120 positioned on the overhang structure 110 and an encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer positioned on each of the overhang structures 110 of the subpixel 106 and positioned between the encapsulation layer 116 and the global passivation layer 120.

[0075] Figure 7B is a schematic cross-sectional view of the overhang structure 110 of the subpixel circuit 700. The superstructure 110B includes a lower edge 752 and an overhang vector 754. In one embodiment, the lower edge 752 extends through the side wall 740 of the base structure 110C. In another embodiment, the side wall 740 of the base structure 110C extends through the lower edge 752. The overhang vector 754 is defined by the lower edge 752 and the PDL structure 126. Additional OLED material 112 is placed on the metal-containing layer 104 and on a portion of the PDL structure 126. In one embodiment, HIL material 150 is placed on the metal-containing layer 104 and on a portion of the PDL structure 126. The additional OLED material 112 is positioned on the HIL material 150 and extends under the overhang 709, past the HIL endpoint 762 of the HIL material 150, to contact the base structure 110C at the OLED endpoint 758. In one embodiment, the HIL material 150 is positioned under the overhang 709, on a portion of the side wall 740 of the base structure 110C. The HIL material 150 is positioned at an HIL angle θ between the HIL vector 760 and the overhang vector 754. HIL The HIL vector 760 is defined by the HIL endpoint 762 extending below the overhang 709, the lower edge 752 of the upper extension 109A, and the angle set by the evaporation source. Additional OLED material 112 is placed on the HIL material 150 and forms an OLED angle θ between the OLED vector 756 and the overhang vector 754. OLED The OLED vector 756 is formed by the OLED endpoint 758 extending below the overhang 709, the lower edge 752 of the upper extension 109A, and the angle set by the evaporation source. Additional OLED material is placed on the first portion 775 of the side wall 740 of the base structure 110C.

[0076] The cathode 114 is positioned on an additional OLED material 112. In some embodiments, the cathode 114 is positioned on a second portion 776 of the side wall 740 of the base structure 110C. The cathode 114 has a cathode angle θ between the cathode vector 164 and the overhang vector 754. cathodeThe cathode vector 164 is defined by the cathode edge 166 extending at least below the overhang 709, the lower edge 752 of the upper extension 109A, and the angle set by the evaporation source. The encapsulation layer 116 is placed on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends at least below the upper structure 110B of the overhang structure 110 and is in contact with the main structure 110A.

[0077] During the evaporation deposition of additional OLED material 112, the lower edge 752 of the upper extension 109A defines the position of the OLED endpoint 758, for example, the additional OLED material 112 evaporates at the maximum OLED angle corresponding to the OLED vector 756, and the lower edge 752 ensures that the additional OLED material 112 does not deposit past the OLED endpoint 758. The lower edge 752 of the upper extension 109A defines the position of the HIL endpoint 762, for example, the HIL material 150 evaporates at the maximum HIL angle corresponding to the HIL vector 760, and the lower edge 752 ensures that the HIL material 150 does not deposit past the HIL endpoint 762. In one embodiment, the HIL endpoint 762 is located on the side wall 740 of the base structure 110C, allowing the HIL material 150 to deposit on the base structure 110C. In another embodiment, the HIL endpoint 762 is located on the PDL structure 126, and the HIL material 150 is not deposited on the base structure 110C. During the evaporation deposition of the cathode 114, the lower edge 752 of the upper extension 109A defines the position of the cathode edge 166, for example, the cathode 114 evaporates at the maximum cathode angle corresponding to the cathode vector 164, and the lower edge 752 ensures that the cathode 114 does not deposit beyond the cathode edge 166. OLED angle θ OLED This is the cathode angle θ cathode It is smaller than. In one embodiment, the HIL angle θ HIL The OLED angle θ OLED It is smaller than. In another embodiment, the OLED angle θ OLED HIL angle θ HIL It is smaller than that.

[0078] Figure 8A is a schematic cross-sectional view of a subpixel circuit 800 according to an embodiment. The subpixel circuit 800 includes a substrate 102. In one embodiment, the subpixel circuit 800 includes a line architecture. The line architecture includes a plurality of pixel openings. Each of the pixel openings is in contact with an overhang structure 110 that defines each of the subpixels 106 of the line architecture. In another embodiment, the subpixel circuit 800 includes a dot architecture. The dot architecture includes a plurality of pixel openings. Each of the pixel openings is surrounded by an overhang structure 110 that defines each of the subpixels 106 of the dot architecture. A metal-containing layer 104 may be patterned on the substrate 102 and is defined by adjacent first pixel definition layer (PDL) structures 826 located on the substrate 102. The metal-containing layer 104 is at least one metal-containing layer. The metal-containing layer 104 is pre-patterned on the substrate 102, for example, the substrate 102 is pre-patterned with an indium tin oxide (ITO) metal-containing layer 104. In one embodiment, the metal-containing layer 104 is a lamination of a first transparent conductive oxide (TCO) layer, a second metal-containing layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal-containing layer. The metal-containing layer 104 is configured to act as the anode of each subpixel. The material of the metal-containing layer 104 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0079] The first PDL structure 826 comprises one of the following: an organic material, an organic material with an inorganic coating placed on top, or an inorganic material. The organic material of the first PDL structure 826 includes, but is not limited to, polyimide. The inorganic material of the first PDL structure 826 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent first PDL structures 826 define their respective subpixels and expose the anode (i.e., the metal-containing layer 104) of each subpixel of the subpixel circuit 800.

[0080] The subpixel circuit 800 has a plurality of subpixels 106, including at least a first subpixel 108A and a second subpixel 108B. Although the figure shows the first subpixel 108A and the second subpixel 108B, the subpixel circuit 800 of the embodiments described herein may include two or more subpixels 106, such as a third and a fourth subpixel. Each subpixel 106 has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel 108A emits red light when energized, the OLED material of the second subpixel 108B emits green light when energized, the OLED material of the third subpixel emits blue light when energized, and the OLED material of the fourth subpixel emits light of another color when energized.

[0081] The overhang structure 110 is permanent to the subpixel circuit 800. The overhang structure 110 further defines each subpixel 106 of the subpixel circuit 800. The overhang structure 110 includes at least a superstructure 110B positioned on a main structure 110A, the main structure 110A positioned on a second PDL structure 828. In one embodiment, the superstructure 110B is positioned on the main structure 110A, and the main structure 110A is positioned on the second PDL structure 828. The second PDL structure 828 is positioned on the upper surface of the first PDL structure 826. In one embodiment, the second PDL structure 828 is positioned on the upper surface of the first PDL structure 826. In one embodiment, the overhang structure 110 includes a superstructure 110B made of a non-conductive inorganic material and a main structure 110A made of a conductive inorganic material. In another embodiment, the overhang structure 110 includes a superstructure 110B made of a conductive inorganic material and a body structure 110A made of a conductive inorganic material. The conductive material of the body structure 110A includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof. The inorganic material of the superstructure includes titanium (Ti), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The second PDL structure 828 includes a nonconductive material. In one embodiment, the first PDL structure 826 and the second PDL structure 828 include the same material, for example, silicon nitride. In another embodiment, the first PDL structure 826 includes a different material from the second PDL structure 828; for example, the first PDL structure includes silicon nitride and the second PDL structure 828 includes silicon oxynitride. The overhang structure 110 can remain in place, i.e., it is permanent. Therefore, no organic material remains from the lifted-off overhang structure that would impair OLED performance. The elimination of the lift-off procedure also increases throughput.

[0082] Each adjacent overhang 809 defines an upper extension 109A of a superstructure 110B that extends laterally beyond the main structure 110A. At least the bottom surface 107 of the superstructure 110B is wider than the top surface 105 of the main structure 110A, forming the upper extension 109A of the overhang 809. The superstructure 110B is positioned on the top surface of the main structure 110A. The upper extension 109A of the superstructure 110B forms the overhang 809, allowing the superstructure 110B to shadow the main structure 110A. The overhang structure 110 and the evaporation angle set by the evaporation source define the deposition angle, i.e., the overhang structure 110 produces a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source. The shadowing of the overhang 809 causes evaporation deposition of the OLED material and the cathode 114, respectively. The OLED material may include one or more of HIL, HTL, EML, and ETL. The HIL material 150 of the OLED material is disposed on the metal-containing layer 104 in contact with the metal-containing layer 104 and extends to the HIL endpoint 862 of the first PDL structure 826. In one embodiment, the HIL material 150 is different from the material of the main structure 110A, the superstructure 110B, and the base structure 110C. An additional OLED material 112 is disposed on the HIL material 150. In one embodiment, the additional OLED material 112 is disposed on the HIL material 150. In one embodiment, the additional OLED material 112 is different from the material of the main structure 110A, the main structure 110B, and the base structure 110C. The additional OLED material 112 extends beyond the HIL endpoint 862 of the HIL material 150 to contact the second PDL structure 828 at the OLED endpoint 858 and is positioned on the first portion 875 of the second PDL structure 828. The cathode 114 is positioned on the additional OLED material 112, extends below the adjacent overhang 809 and contacts the second portion of the second PDL structure 828. In one embodiment, the cathode 114 does not contact the second PDL structure 828. The overhang structure 110 and the evaporation angle set by the evaporation source are aligned with the HIL angle θ of the HIL material 150. HIL , additional OLED material 112 OLED angle θ OLED, and the cathode angle θ of cathode 114 cathode Define the HIL angle θ of the HIL material 150. HIL , additional OLED material 112 OLED angle θ OLED , and the cathode angle θ of cathode 114 cathode This can result from the overhang structure 110 and the evaporation deposition of the HIL material 150, additional OLED material 112, and cathode 114. That is, the overhang structure 110 produces a shadowing effect during evaporation deposition at an evaporation angle set by an evaporation source configured to release the deposited material at a specific angle relative to the overhang structure 110. In one embodiment, the additional OLED material 112 and cathode 114 are in contact with the main structure 110A of the overhang structure 110, while the HIL material 150 is not in contact with the main structure 110A. In another embodiment, the cathode 114 is in contact with the main structure 110A, while the HIL material 150 and additional OLED material 112 are not in contact with the main structure 110A. In either embodiment, the HIL material 150 is not in contact with the conductive material of the main structure 110A. The interruption disrupts the direct path from the metal-containing layer 104 to the conductive material of the main structure 110A through the HIL material 150. Therefore, the HIL material 150 does not continuously connect the conductive material of the main structure 110A to the metal-containing layer 104. Consequently, when the input current flows through the metal-containing layer 104 and then through the HIL material 150, the current flows through the additional OLED material 112 to the cathode 114, illuminating the subpixel 106. If the HIL material 150 continuously connected the conductive material of the main structure 110A to the metal-containing layer 104, some of the current would flow from the HIL material 150 to the main structure 110A, bypassing the additional OLED material 112.

[0083] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, but is not limited to, chromium, titanium, aluminum, ITO, or a combination thereof. In one embodiment, the material of the cathode 114 is different from the material of the main structure 110A, the superstructure 110B, and the base structure 110C. In another embodiment, the cathode 114 and the additional OLED material 112 are placed on a portion of the main structure 110A. In yet another embodiment, the cathode 114 is placed on a portion of the main structure 110A, and the additional OLED material 112 is not placed on a portion of the main structure. In some embodiments, for example, as shown in Figures 7A and 7B applied to a subpixel circuit 800, the additional OLED material 112 and the cathode 114 are placed on the side wall 113 of the superstructure 110B of the overhang structure 110 and on the top surface 115 of the superstructure 110B of the overhang structure 110. In the exemplary embodiments 8A and 8B, the HIL material 150, the additional OLED material 112, and the cathode 114 terminate at the side wall 111 of the main body structure 110A, i.e., they are not located on the upper surface 115 of the superstructure 110B of the overhang structure 110.

[0084] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or equivalent. The encapsulation layer 116 of each subpixel is positioned on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends along each sidewall of the overhang structure 110, with the encapsulation layer 116 beneath at least a portion of the overhang structure 110. The encapsulation layer 116 is positioned on the cathode 114 and extends to contact the cathode 114 on at least a second portion of the sidewall 829 of the second PDL structure 828. In some embodiments, the encapsulation layer 116 extends to contact the conductive material of the main structure 110A. In some embodiments, for example as shown in Figures 4A and 4B, which are applied to subpixel 800, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B on the lower surface of the upper extension 109A, and extends to be positioned on the HIL material 150, the additional OLED material 112, and the cathode 114 when the HIL material 150, the additional OLED material 112, and the cathode 114 are positioned on the sidewall 113 and the top surface 115 of the superstructure 110B. In some embodiments, for example as shown in Figures 1A and 1B, the encapsulation layer 116 extends to contact the inorganic material of the superstructure 110B on the lower surface of the upper extension 109A, the sidewall 113 of the superstructure 110B, and the top surface 115 of the superstructure 110B. In exemplary embodiments of 8A and 8B, the encapsulation layer 116 terminates at the side wall 111 of the main structure 110A, i.e., it is not located on the side wall 113 of the superstructure 110B, the upper surface 115 of the superstructure 110B of the overhang structure 110, or the lower surface of the upper extension 109A. The encapsulation layer 116 comprises a non-conductive inorganic material such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material.

[0085] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may include an organic material. The second capping layer may include an inorganic material such as lithium fluoride. The first capping layer and the second capping layer can be deposited by evaporation deposition. In another embodiment, the subpixel circuit 100 further includes at least a global passivation layer 120 positioned on the overhang structure 110 and an encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer positioned on each of the overhang structures 110 of the subpixel 106 and positioned between the encapsulation layer 116 and the global passivation layer 120.

[0086] Figure 8B is a schematic cross-sectional view of the overhang structure 110 of the subpixel circuit 800. The superstructure 110B includes a lower edge 852 and an overhang vector 854. The overhang vector 854 is defined by the lower edge 852 and the first PDL structure 826. In one embodiment, the HIL material 150 is placed on the metal-containing layer 104 and on a portion of the first PDL structure 826. The additional OLED material 112 is placed on the HIL material 150 and extends past the HIL endpoint 862 of the HIL material 150 to the OLED endpoint 858. In one embodiment, the HIL material 150 is placed below the overhang 809 and on a portion of the sidewall 829 of the second PDL structure 828. The HIL material 150 has an HIL angle θ between the HIL vector 860 and the overhang vector 854. HILThe HIL vector 860 is defined by the HIL endpoint 862 extending below the overhang 809, the lower edge 852 of the upper extension 109A, and the angle set by the evaporation source. Additional OLED material 112 is placed on the HIL material 150, and an OLED angle θ is formed between the OLED vector 856 and the overhang vector 854. OLED The OLED vector 856 is defined by the OLED endpoint 858 extending below the second overhang 109, the lower edge 852 of the upper extension 109A, and the angle set by the evaporation source. Additional OLED material 112 is placed on the first portion 875 of the side wall 829 of the second PDL structure 828.

[0087] The cathode 114 is positioned on an additional OLED material 112. In some embodiments, the cathode 114 is positioned on a second portion of the side wall 829 of a second PDL structure 828. The cathode 114 has a cathode angle θ between the cathode vector 164 and the overhang vector 854. cathode The cathode vector 164 is defined by the position of the cathode edge 166 extending at least below the overhang 809, the lower edge 852 of the superstructure 110B, and the cathode source. The encapsulation layer 116 is placed on the cathode 114 (and additional OLED material 112) such that the encapsulation layer 116 extends at least below the superstructure 110B of the overhang structure 110 and is in contact with a portion of the conductive material of the main structure 110A.

[0088] During the evaporation deposition of the additional OLED material 112, the lower edge 852 of the upper extension defines the position of the OLED end point 858. For example, the additional OLED material 112 evaporates at the OLED maximum angle corresponding to the OLED vector 856, and the lower edge 852 ensures that the additional OLED material 112 is not deposited beyond the OLED end point 858. In one embodiment, the additional OLED material 112 is deposited on the first portion 875 of the sidewall 829 of the second PDL structure 828. In another embodiment, the additional OLED material is deposited on a part of the body structure 110A. During the deposition of the HIL material 150, the lower edge 852 of the upper extension 109A defines the position of the HIL end point 862. For example, the HIL material 150 evaporates at the HIL maximum angle corresponding to the HIL vector 860, and the lower edge 852 ensures that the HIL material 150 is not deposited beyond the HIL end point 862. In one embodiment, the HIL end point 862 is on the sidewall 829 of the second PDL structure 828, enabling the HIL material 150 to be deposited on the second PDL structure 828. In another embodiment, the HIL end point 862 is on the first PDL structure 826, the HIL material 150 is not deposited on the second PDL structure 828 structure, and the additional OLED material 112 is deposited on the first PDL structure 826. During the evaporation deposition of the cathode 114, the lower edge 852 of the upper structure 110B defines the position of the cathode edge 166. For example, the cathode 114 evaporates at the cathode maximum angle corresponding to the cathode vector 164, and the lower edge 852 ensures that the cathode 114 is not deposited beyond the cathode edge 166. In one embodiment, the cathode 114 is disposed on the second portion of the sidewall 829 of the second PDL structure 828. In one embodiment, the cathode 114 is not disposed on the second PDL structure 828. OLED angle θ OLED is smaller than the cathode angle θ cathode In one embodiment, the HIL angle θ HIL is smaller than the OLED angle θ OLED In another embodiment, the OLED angle θ OLED is smaller than the HIL angle θ HIL

[0089] ​In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may include an organic material. The second capping layer may include an inorganic material such as lithium fluoride. The first capping layer and the second capping layer can be deposited by evaporation deposition. In another embodiment, the subpixel circuit 800 further includes at least a global passivation layer 120 positioned on the overhang structure 110 and the encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer positioned on each of the overhang structures 110 of the subpixel 106 and positioned between the encapsulation layer 116 and the global passivation layer 120.

[0090] In summary, the foregoing describes subpixel circuits and methods for forming subpixel circuits that can be used in displays such as organic light-emitting diode (OLED) displays. The subpixel circuits are formed using evaporation deposition by adjacent overhang structures defining each subpixel of the subpixel circuit of the display, so that the overhang structures remain in place after the subpixel circuit is formed. Evaporation deposition can be used for the deposition of HIL material, additional OLED material, and cathode. The overhang structures define the deposition angle, i.e., the overhang structures produce a shadowing effect during evaporation deposition at the evaporation angle set by the evaporation source for each of the HIL material, additional OLED material, and cathode. The encapsulation layer of each subpixel is positioned above the cathode, with the encapsulation layer extending along the sidewalls of each adjacent overhang structure, and at least a portion of each of the adjacent overhang structures.

[0091] While the above applies to embodiments of the present disclosure, other further embodiments of the present disclosure can be conceived without departing from its basic scope, the scope of which is defined by the following claims.

Claims

1. It is a device, circuit board and A plurality of adjacent pixel definition layer (PDL) structures arranged on the substrate, each PDL structure including an upper surface, Multiple subpixels and Includes, Each subpixel is An adjacent first overhang, each first overhang defined by a main body extension of the main body structure extending laterally beyond the base structure, the base structure being positioned on the upper surface of the PDL structure, and the main body structure being positioned on the base structure, with respect to the adjacent first overhang. An adjacent second overhang, each second overhang defined by an upper extension of a superstructure that extends laterally beyond the overhang portion of the main body extension, and the superstructure is positioned on the main body structure, and the adjacent second overhang is... A-scatter, A hole injection layer (HIL) material is disposed on the anode in contact with the anode and positioned below the adjacent first overhang, An additional organic light-emitting diode (OLED) material disposed on the HIL material, extending below the adjacent first overhang and disposed on the first portion of the main body extension, A cathode disposed on the additional OLED material, extending below the adjacent second overhang and in contact with the second portion of the main body extension. A device that includes this.

2. The device according to claim 1, wherein the base structure includes a metal-containing material or an inorganic material.

3. The device according to claim 2, wherein the metal-containing material is a transparent conductive oxide (TCO) material.

4. The device according to claim 1, wherein the main body structure includes at least one conductive material selected from metals or metal alloys.

5. The device according to claim 1, wherein the superstructure includes an inorganic material.

6. The device according to claim 1, wherein the additional OLED material extends beyond the endpoint of the HIL material and into contact with the PDL structure.

7. The device according to claim 1, wherein the HIL material extends beyond the endpoint of the additional OLED material to contact the PDL structure.

8. The device according to claim 1, wherein the HIL material is positioned on the anode in contact with the anode, and positioned below the adjacent first overhang and the adjacent second overhang so that the HIL contacts the main body extension, and a portion of the additional OLED material positioned below the adjacent first overhang separates the HIL material positioned on the anode from the HIL material of the main body extension.

9. The device according to claim 1, wherein the additional OLED material comprises one or more of a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).

10. The sealing layer is placed on the cathode, The aforementioned sealing layer, The second portion of the main body extension is in contact with the cathode, and The device according to claim 1, wherein the third portion of the extension of the main body extends so as to contact the conductive material of the main body structure.

11. A device having multiple subpixels, where each subpixel is A part of the circuit board, At least one metal-containing layer disposed on the substrate, An adjacent first overhang, each first overhang defined by a pixel definition layer (PDL) extension of a PDL structure extending laterally beyond the base structure, the base structure being located on the upper surface of the at least one metal-containing layer, the PDL extension being located on the base structure, and the PDL body of the PDL structure being located on the substrate, and the adjacent first overhang, A main body structure is placed on the upper surface of the PDL structure, An adjacent second overhang, each second overhang defined by an upper extension of a superstructure that extends laterally beyond the overhang portion of the main extension of the main structure, the superstructure being positioned on the main structure, and the main structure being positioned on the PDL structure, and an adjacent second overhang, A hole injection layer (HIL) material is disposed on the at least one metal-containing layer in contact with the at least one metal-containing layer and positioned below the adjacent first overhang, An additional organic light-emitting diode (OLED) material disposed on the HIL material, extending below the adjacent first overhang and disposed on the first portion of the main body structure, A cathode disposed on the additional OLED material, extending below the adjacent second overhang and in contact with the second portion of the main body structure. A device equipped with the following features.

12. The device according to claim 11, wherein the main body structure includes at least one conductive material selected from metals or metal alloys.

13. The device according to claim 11, wherein the superstructure includes an inorganic material.

14. The device according to claim 11, wherein the additional OLED material extends beyond the endpoint of the HIL material to contact the at least one metal-containing layer.

15. The device according to claim 11, wherein the HIL material extends beyond the endpoint of the additional OLED material to contact the at least one metal-containing layer.

16. The device according to claim 11, wherein the additional OLED material comprises one or more of a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).

17. The device according to claim 11, wherein the base structure includes a metal-containing material.

18. The device according to claim 11, wherein the encapsulation layer is disposed on the cathode, and the first encapsulation layer extends so as to contact the conductive material of the main body structure.

19. The device according to claim 11, wherein the at least one metal-containing layer is a laminate of a first TCO layer, a second metal layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal layer, and the base structure is disposed on the upper surface of the third TCO layer.

20. It is a device, circuit board and A plurality of adjacent pixel definition layer (PDL) structures arranged on the substrate, A plurality of adjacent overhang structures arranged on the upper surface of the PDL structure, each of the overhang structures is A base structure containing a non-conductive material is disposed on the upper surface of the PDL structure, A main body structure including a conductive material is placed on the base structure, An upper structure disposed on the main body structure, and including an upper extension that extends laterally beyond the main body structure. Multiple adjacent overhang structures, It consists of multiple subpixels, and each subpixel is A-scatter, A hole injection layer (HIL) material disposed on the anode in contact with the anode, the HIL material extending below the upper extension and in contact with the first portion of the nonconductive material of the base structure, An additional organic light-emitting diode (OLED) material is disposed on the HIL material, A cathode disposed on the additional OLED material, extending below the adjacent overhang and in contact with the conductive material at the side wall of the main body structure. Multiple subpixels including A device that includes this.

21. The device according to claim 20, wherein the base structure comprises a nonconductive material and the PDL structure comprises an organic material or an inorganic material.

22. The device according to claim 20, wherein the additional OLED material extends to contact the main body structure.

23. The device according to claim 20, wherein the conductive material includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof.

24. The device according to claim 20, wherein the superstructure comprises a polymer material, an inorganic material, or a metallic material.

25. The device according to claim 20, wherein the additional OLED material comprises a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).

26. The sealing layer is placed on the cathode, The first encapsulation layer is The side wall of the main body structure is in contact with the cathode on the conductive material, and The device according to claim 20, wherein the main body structure extends so as to contact the conductive material at the side wall.

27. It is a device, circuit board and A plurality of first adjacent pixel definition layer (PDL) structures arranged on the substrate, A plurality of adjacent overhang structures arranged on the upper surface of the first PDL structure and Includes, Each of the above overhang structures is A second PDL structure comprising a non-conductive material is disposed on the upper surface of the first PDL structure, A main body structure containing a conductive material is placed on top of the second PDL structure, An upper structure disposed on the main body structure, the upper structure includes an upper extension that extends laterally beyond the main body structure, Multiple subpixels and It includes, and each subpixel is, A-scatter, A hole injection layer (HIL) material disposed on the anode in contact with the anode, the HIL material extending below the upper extension and in contact with the nonconductive material of the second PDL structure, An additional organic light-emitting diode (OLED) material is disposed on the HIL material, A cathode disposed on the additional OLED material, the cathode extending below the adjacent overhang structure and A device that includes this.

28. The device according to claim 27, wherein the conductive material includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof.

29. The device according to claim 27, wherein the additional OLED material comprises a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).

30. The sealing layer is placed on the cathode, The first encapsulation layer is The conductive material of the main body structure is in contact with the cathode, and The device according to claim 27, extending so as to contact the conductive material of the main body structure.

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