Light-emitting diodes and light-emitting diode display devices

Abstract

The light-emitting diode according to the present invention further includes a semiconductor layer, a first element electrode on the upper part of the semiconductor layer, a second element electrode on the upper part of the semiconductor layer, a first auxiliary electrode connected to the first element electrode and disposed on one side surface of the light-emitting diode, a first protective layer on the upper part of the first element electrode and the second element electrode, and a second protective layer on the upper part of the first auxiliary electrode and the first protective layer. [Effect] Therefore, short circuits between the electrodes of the light-emitting diode can be prevented.

Description

Technical Field

[0005]

[0001] The present invention relates to a display device, and particularly to a light emitting diode display device.

Background Art

[0002] With the development of information technology, various requirements for display devices for displaying images have increased. Flat panel display devices such as liquid crystal display devices (LCDs) and light emitting diode display devices (LEDs) have been developed and adopted in various fields.

[0003] Among flat panel display devices, a light emitting diode display device includes a light emitting diode (LED) as a light emitting element. When the light emitting diode injects charges into a light emitting layer provided between a cathode which is an electron injection electrode and an anode which is a hole injection electrode, electrons and holes combine to form excitons, and then emit light when disappearing.

[0004] Since the light emitting diode display device is a self-emitting element, it is superior in viewing angle and the like compared to a liquid crystal display device, and because it does not require a backlight, it can be lightweight and thin, and is also advantageous in terms of power consumption.

[0005] Such a light emitting diode display device can be provided with a light emitting element made of an inorganic material or a light emitting element made of an organic material. However, the light emitting element made of an inorganic material is relatively more stable, has a fast response, and has characteristics such as a high contrast. Therefore, for high resolution, micro light emitting diodes (micro LEDs, μLEDs) are widely used as light emitting elements made of inorganic materials.

[0006] Inorganic light-emitting elements are formed on a separate growth substrate and then transferred to the array substrate of the display device before signal transmission electrodes are formed. However, because the size of the light-emitting elements is relatively small, the distance between electrodes becomes short, which can lead to short-circuit defects where the electrodes of the light-emitting elements short-circuit together. [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] The present invention is presented to solve the aforementioned problems and aims to provide a light-emitting diode display device that can prevent short circuits between electrodes of a light-emitting element. [Means for solving the problem]

[0008] To achieve the aforementioned objectives, the light-emitting diode according to the present invention further includes a semiconductor layer, a first element electrode on the upper part of the semiconductor layer, a second element electrode on the upper part of the semiconductor layer, a first auxiliary electrode connected to the first element electrode and disposed on one side surface of the light-emitting diode, a first protective layer on the upper part of the first element electrode and the second element electrode, and a second protective layer on the upper part of the first auxiliary electrode and the first protective layer.

[0009] The position of the second element electrode is higher than the position of the first element electrode.

[0010] The first protective layer exposes the first element electrode and the second element electrode, and the first protective layer extends from the upper surface of the first element electrode to the side surface of the semiconductor layer.

[0011] The second protective layer contacts the first auxiliary electrode, exposing the first auxiliary electrode which is positioned on one side surface of the light-emitting diode.

[0012] The first auxiliary electrode contacts the upper surface of the first element electrode and extends from the upper surface of the first element electrode to one side of the light-emitting diode, and the first auxiliary electrode covers the first protective layer on the upper part of the one side of the light-emitting diode.

[0013] The light-emitting diode according to the present invention further includes a second auxiliary electrode disposed on the other side of the light-emitting diode, wherein the other side of the light-emitting diode is separated from the one side of the light-emitting diode.

[0014] The second auxiliary electrode contacts the upper surface of the second element electrode and extends from the second element electrode to the other side of the light-emitting diode. On the other side of the light-emitting diode, the second auxiliary electrode covers the first protective layer, and the second protective layer exposes the second auxiliary electrode positioned on the other side of the light-emitting diode.

[0015] The first auxiliary electrode has a first region exposed by the second protective layer, and the second auxiliary electrode has a second region exposed by the second protective layer, the second region being located higher than the first region.

[0016] The first protective layer extends from the upper surface of the first auxiliary electrode to the side surface of the semiconductor layer, and the second protective layer exposes the first auxiliary electrode, which is positioned on the side surface of the semiconductor layer.

[0017] The light-emitting device according to the present invention includes a substrate, a light-emitting element provided on the upper part of the substrate and including a first element electrode, a second element electrode, and an auxiliary electrode, a first electrode connected to the first element electrode, and a second electrode provided on the upper part of the first electrode and connected to the second element electrode, wherein the first element electrode and the second element electrode are spaced apart from each other, the auxiliary electrode is positioned on at least one side of the light-emitting element, and at least one of the first electrode and the second electrode is connected to at least one of the first element electrode and the second element electrode by the auxiliary electrode.

[0018] The light-emitting element display device according to the present invention further includes a thin-film transistor provided on the upper part of the substrate, and a reflective electrode provided on the upper part of the thin-film transistor and connected to the thin-film transistor and the first electrode.

[0019] The light-emitting element display device according to the present invention further includes power supply wiring provided on the upper part of the substrate and spaced apart from the thin-film transistor, wherein the power supply wiring is located on the same layer as the source electrode and drain electrode of the thin-film transistor.

[0020] The light-emitting element display device according to the present invention further includes a thin-film transistor and a first connecting electrode provided on the upper part of the power supply wiring, wherein the first connecting electrode is connected to the power supply wiring.

[0021] The light-emitting element display device according to the present invention further includes a second connecting electrode provided above the first connecting electrode and in contact with the first connecting electrode, wherein the second electrode is connected to the second connecting electrode.

[0022] The light-emitting element display device according to the present invention further includes an adhesive layer provided on the upper part of the reflective electrode, a second planarization layer on which the first electrode is provided on the upper part thereof, and a third planarization layer covering the first electrode, wherein the second electrode is positioned on the upper part of the third planarization layer, and the second electrode contacts the second connecting electrode through a contact hole provided in the third planarization layer.

[0023] The light-emitting element display device according to the present invention further includes a first capacitor electrode and a second capacitor electrode located above the first capacitor electrode, wherein the second capacitor electrode is electrically connected to the thin-film transistor.

[0024] The first electrode contacts the first auxiliary electrode of the auxiliary electrode, which is positioned on one side of the light-emitting element, and the second electrode contacts the second auxiliary electrode of the auxiliary electrode, which is positioned on the other side of the light-emitting element.

[0025] The second auxiliary electrode contacts the upper surface of the second element electrode and extends from the second element electrode to the other side of the light-emitting element. On the other side of the light-emitting element, the second auxiliary electrode covers the first protective layer, and the second protective layer exposes the second auxiliary electrode positioned on the other side of the light-emitting element.

[0026] The first connection electrode and the reflection electrode are located in the same layer and contain the same material.

[0027] The first element electrode is provided on top of the second planarization layer.

[0028] The light-emitting diode display device of the present invention can prevent a short circuit between the electrodes of the light-emitting element by providing at least one auxiliary electrode on the side surface of the light-emitting element and connecting it to the electrode of the array substrate.

[0029] Such a light-emitting element self-organizes on a self-organizing substrate and then forms an auxiliary electrode, and is transferred to an array substrate, so that the manufacturing process of the light-emitting diode display device can be optimized and the production energy can be reduced.

Brief Description of the Drawings

[0030] [Figure 1] It is an equivalent circuit diagram of one sub-pixel in the light-emitting diode display device according to an embodiment of the present invention. [Figure 2] It is a plan view schematically showing the light-emitting diode display device according to an embodiment of the present invention. [Figure 3] It is a cross-sectional view schematically showing the light-emitting diode display device according to an embodiment of the present invention. [Figure 4A] It is a cross-sectional view schematically showing the display device in the manufacturing process of the light-emitting diode display device according to an embodiment of the present invention. [Figure 4B] It is a cross-sectional view schematically showing the display device in the manufacturing process of the light-emitting diode display device according to an embodiment of the present invention. [Figure 4C] It is a cross-sectional view schematically showing the display device in the manufacturing process of the light-emitting diode display device according to an embodiment of the present invention. [Figure 4D] It is a cross-sectional view schematically showing the display device in the manufacturing process of the light-emitting diode display device according to an embodiment of the present invention. [Figure 4E]This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4F] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4G] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4H] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4I] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4J] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 4K] This is a schematic cross-sectional view showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing a light-emitting diode display device according to another embodiment of the present invention. [Modes for carrying out the invention]

[0031] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments detailed with the drawings. However, the present invention is not limited to the embodiments disclosed below and can be embodied in a variety of different forms. These embodiments are provided so as to give a complete disclosure of the present invention and so as to give a full understanding of the scope of the invention to a person who is ordinary skill in the art to which the invention pertains.

[0032] The shapes, sizes, proportions, angles, and quantities disclosed in the drawings illustrating embodiments of the present invention are illustrative and the present invention is not limited thereto. Throughout the specification, the same reference numerals indicate the same components.

[0033] Furthermore, in explaining the present invention, if it is determined that a specific explanation of related prior art would obscure the gist of the invention, such detailed explanation will be omitted.

[0034] Wherever "equips," "includes," "has," "possesses," or "becomes" is used in this specification, other parts may be added unless "only / only" is also used.

[0035] Furthermore, if a component is written in the singular form, it can be interpreted as plural unless otherwise explicitly stated.

[0036] Furthermore, when interpreting the constituent elements, a margin of error shall be included even if not explicitly stated.

[0037] For example, when describing the positional relationship between two components using terms such as "above," "above," "below," or "beside," one or more other components may be located between the two components unless otherwise specified as "directly" or "directly."

[0038] Furthermore, while terms such as "first" and "second" are used to distinguish the components, the components are not limited to these terms. Therefore, the first component mentioned below may also be the second component within the technical concept of the present invention.

[0039] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0040] An embodiment of the present invention includes a plurality of pixels, each pixel includes a plurality of sub-pixels, and each sub-pixel may have the configuration shown in Figure 1.

[0041] Figure 1 is an equivalent circuit diagram of one subpixel in a light-emitting diode display device according to an embodiment of the present invention.

[0042] As shown in Figure 1, one subpixel in the light-emitting diode display device according to an embodiment of the present invention includes first to seventh transistors T1 to T7, first to third capacitors C1 to C3, and a light-emitting diode De.

[0043] For example, the first to seventh transistors T1 to T7 may be p-type transistors. However, the embodiments of the present invention are not limited thereto, and the first to seventh transistors T1 to T7 in other embodiments may be n-type transistors.

[0044] The first transistor T1 is switched by the first gate signal SCAN1 and connected to the data signal Vdata. Specifically, the gate of the first transistor T1 is connected to the first gate signal SCAN1, the source of the first transistor T1 is connected to the data signal Vdata, and the drain of the first transistor T1 is connected to one electrode of the first capacitor C1 and the source of the third transistor T3.

[0045] The second transistor T2 is switched by the first gate signal SCAN1 and connected to the sixth transistor T6. Specifically, the gate of the second transistor T2 is connected to the first gate signal SCAN1, the source of the second transistor T2 is connected to the other electrode of the first capacitor C1, the one electrode of the third capacitor C3 and the gate of the sixth transistor T6, and the drain of the second transistor T2 is connected to the drain of the sixth transistor T6, the source of the fourth transistor T4 and the drain of the fifth transistor T5.

[0046] The third transistor T3 is switched by the light emission signal EM and connected to the reference voltage Vref. Specifically, the gate of the third transistor T3 is connected to the light emission signal EM, the source of the third transistor T3 is connected to one electrode of the first capacitor C1 and the drain of the first transistor T1, and the drain of the third transistor T3 is connected to the reference voltage Vref and the source of the fifth transistor T5.

[0047] The fourth transistor T4 is switched by a light emission signal EM and connected to the sixth transistor T6 and the low voltage VSS. Specifically, the gate of the fourth transistor T4 is connected to the light emission signal EM, the source of the fourth transistor T4 is connected to the drain of the sixth transistor T6, the drain of the second transistor T2, and the drain of the fifth transistor T5, and the drain of the fourth transistor T4 is connected to the low voltage VSS.

[0048] The fifth transistor T5 is switched by the second gate signal SCAN2 and connected to the reference voltage Vref and the sixth transistor T6. Specifically, the gate of the fifth transistor T5 is connected to the second gate signal SCAN2, the source of the fifth transistor T5 is connected to the reference voltage Vref and the drain of the third transistor T3, and the drain of the fifth transistor T5 is connected to the drain of the sixth transistor T6, the drain of the second transistor T2, and the drain of the fourth transistor T4.

[0049] The sixth transistor T6 may be a driving transistor. The sixth transistor T6 is switched by one electrode of the third capacitor C3 and connected to the light-emitting diode De. Specifically, the gate of the sixth transistor T6 is connected to one electrode of the third capacitor C3, the other electrode of the first capacitor C1, and the source of the second transistor T2; the source of the sixth transistor T6 is connected to the cathode of the light-emitting diode De, the other electrode of the second capacitor C2, the other electrode of the third capacitor C3, and the drain of the seventh transistor T7; and the drain of the sixth transistor T6 is connected to the drain of the second transistor T2, the source of the fourth transistor T4, and the drain of the fifth transistor T5.

[0050] The seventh transistor T7 is switched by the first gate signal SCAN1 and connected to the high potential voltage VDD and the light-emitting diode De. Specifically, the gate of the seventh transistor T7 is connected to the first gate signal SCAN1, the source of the seventh transistor T7 is connected to the anode of the light-emitting diode De, the high potential voltage VDD, and one electrode of the second capacitor C2, and the drain of the seventh transistor T7 is connected to the cathode of the light-emitting diode De, the source of the sixth transistor T6, the other electrode of the second capacitor C2, and the other electrode of the third capacitor C3.

[0051] The first to third capacitors C1 to C3 are storage capacitors that store the data signal Vdata and the threshold voltage Vth of the drive transistor DT, but the third capacitor C3 may be located between the first capacitor C1 and the second capacitor C2. Furthermore, the first capacitor C1 may be connected between the drain of the first transistor T1 and the gate of the sixth transistor T6, the second capacitor C2 may be connected between the high potential voltage VDD and the source of the sixth transistor T6 and connected in parallel with the light-emitting diode De, and the third capacitor C3 may be connected between the gate and source of the sixth transistor T6.

[0052] Light-emitting diode De is connected between the sixth transistor T6 and the high potential voltage VDD, and emits light with a brightness proportional to the current of the sixth transistor T6. Specifically, the anode of light-emitting diode De is connected to the high potential voltage VDD, one electrode of the second capacitor C2, and the source of the seventh transistor T7, while the cathode of light-emitting diode De is connected to the source of the sixth transistor T6, the other electrode of the second capacitor C2, the other electrode of the third capacitor C3, and the drain of the seventh transistor T7.

[0053] In the embodiment of the present invention shown in Figure 1, a 7T3C structure is given as an example, in which each subpixel consists of seven transistors and three capacitors. However, embodiments of the present invention are not limited to this. In other embodiments, each subpixel may have any one of the following structures: 2T1C, 3T1C, 4T1C, 5T1C, 3T2C, 4T2C, 5T2C, 6T2C, 7T1C, 7T2C, 8T1C, or 8T2C.

[0054] The planar configuration of the light-emitting diode display device according to this embodiment of the present invention will be described with reference to Figure 2.

[0055] Figure 2 is a schematic plan view of a light-emitting diode display device according to an embodiment of the present invention, showing a portion of one sub-pixel.

[0056] As shown in Figure 2, the gate wiring GL, the light-emitting wiring EL, and the reference wiring RL extend in the first direction X and are spaced apart from each other in the second direction Y. In this case, the gate wiring GL can be located between the light-emitting wiring EL and the reference wiring RL, but the embodiments of the present invention are not limited to this.

[0057] The gate wiring GL can transmit the first gate signal SCAN1 or the second gate signal SCAN2 in Figure 1, the light emission wiring EL can transmit the light emission signal EM in Figure 1, and the reference wiring RL can transmit the reference voltage Vref in Figure 1.

[0058] Furthermore, a drive wiring NL may extend in the first direction X and be provided. The drive wiring NL may be part of a gate drive unit for generating signals applied to the gate wiring GL and / or the light-emitting wiring EL. However, embodiments of the present invention are not limited thereto, and such drive wiring NL may be omitted.

[0059] Subsequently, data wiring DL, first power wiring PL1, and second power wiring PL2 extend in the second direction Y and are spaced apart from each other in the first direction X. In this case, the first power wiring PL1 may be located between data wiring DL and second power wiring PL2, but the embodiments of the present invention are not limited to this.

[0060] The data wiring DL can transmit the data signal Vdata in Figure 1, the first power wiring PL1 can transmit the high potential voltage VDD in Figure 1, and the second power wiring PL2 can transmit the low potential voltage VSS in Figure 1.

[0061] Such wiring GL, EL, RL, DL, PL1, PL2 can be selectively connected to the first to seventh transistors T1 to T7 and the first to third capacitors C1 to C3 shown in Figure 1.

[0062] Furthermore, the light-emitting element 140 may be provided substantially between the first power supply wiring PL1 and the second power supply wiring PL2. However, the embodiments of the present invention are not limited thereto, and the position of the light-emitting element 140 may differ.

[0063] Here, the light-emitting element 140 further includes an auxiliary electrode 145 on one side. Therefore, in the light-emitting diode display device according to the embodiment of the present invention, by connecting the electrodes of the light-emitting element 140 to electrodes on the array substrate via the auxiliary electrode 145, short circuits between the electrodes of the light-emitting element 140 can be prevented.

[0064] The cross-sectional structure of the light-emitting diode display device according to this embodiment of the present invention will be described in detail with reference to Figure 3.

[0065] Figure 3 is a schematic cross-sectional view showing a light-emitting diode display device according to an embodiment of the present invention, and shows cross-sections corresponding to areas A1, A2, and A3 in Figure 2.

[0066] As shown in Figure 3, in the embodiment of the present invention, a light-emitting diode display device is provided with a thin-film transistor TR and a light-emitting element 140 on the upper part of a substrate 110, the first element electrode 141 of the light-emitting element 140 is connected to the thin-film transistor TR, and the second element electrode 142 of the light-emitting element 140 is connected to the power supply wiring 128.

[0067] Specifically, a light-shielding layer 121 is provided on the upper part of the substrate 110. The substrate 110 may be a glass substrate or a plastic substrate. For example, polyimide PI can be used for the plastic substrate, but is not limited to this.

[0068] Furthermore, the light-shielding layer 121 is formed from a conductive material such as a metal, and can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or alloys thereof. The light-shielding layer 121 may be a single layer or a multilayer structure.

[0069] A buffer layer 111 is provided above the light-shielding layer 121. The buffer layer 111 can be located substantially across the entire surface of the substrate 110. The buffer layer 111 may be a single layer or a multilayer made of an inorganic insulating material. The inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxide nitride (SiON).

[0070] An active layer 122 is provided above the buffer layer 111. The active layer 122 overlaps with the light-shielding layer 121, and the light-shielding layer 121 blocks the light incident on the active layer 122, preventing the active layer 122 from degrading due to light.

[0071] The active layer 122 may include a central channel region and source and drain regions on either side of the channel region. Such an active layer 122 can be formed from an oxide semiconductor material. Alternatively, the active layer 122 can be formed from polycrystalline silicon. In this case, impurities may be doped into the side edges of the active layer 122.

[0072] A gate insulating layer 112 is provided above the buffer layer 111 on which the active layer 122 is located. The gate insulating layer 112 can be located substantially across the entire surface of the substrate 110. The gate insulating layer 112 may be a single layer or a multilayer made of an inorganic insulating material. The inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxide nitride (SiON).

[0073] A gate electrode 123 and a first capacitor electrode 124 are provided on the upper part of the gate insulating layer 112. The gate electrode 123 overlaps with the active layer 122 and is located corresponding to the center of the active layer 122. Therefore, the gate electrode 123 also overlaps with the light-shielding layer 121.

[0074] The first capacitor electrode 124 may be spaced apart from the active layer 122 and overlap the light-shielding layer 121.

[0075] The gate electrode 123 and the first capacitor electrode 124 are formed from a conductive material such as a metal, and can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or alloys thereof. The gate electrode 123 and the first capacitor electrode 124 may have a single-layer structure or a multilayer structure.

[0076] A first interlayer insulating layer 113 is provided above the gate electrode 123 and the first capacitor electrode 124. The first interlayer insulating layer 113 may be a single layer or a multilayer made of an inorganic insulating material. The inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxide nitride (SiON).

[0077] A second capacitor electrode 125 is provided on the upper part of the first interlayer insulating layer 113. The second capacitor electrode 125 overlaps with the first capacitor electrode 124 and constitutes a storage capacitor. This second capacitor electrode 125 may also overlap with the light-shielding layer 121.

[0078] The second capacitor electrode 125 is formed from a conductive material such as a metal, and can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The second capacitor electrode 125 may have a single-layer structure or a multi-layer structure.

[0079] A second interlayer insulating layer 114 is provided above the second capacitor electrode 125. The second interlayer insulating layer 114 can be located substantially across the entire surface of the substrate 110. The second interlayer insulating layer 114 may be a single layer or a multilayer made of an inorganic insulating material. The inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON).

[0080] A source electrode 126, a drain electrode 127, and power wiring 128 are provided on the upper part of the second interlayer insulating layer 114. The source electrode 126 and the drain electrode 127 are spaced apart via a gate electrode 123 and contact the side edges of the active layer 122, respectively, through contact holes provided in the gate insulating layer 112, the first interlayer insulating layer 113, and the second interlayer insulating layer 114.

[0081] Furthermore, the source electrode 126 extends and overlaps the first capacitor electrode 124 and the second capacitor electrode 125, and can contact the second capacitor electrode 125 through a contact hole provided in the second interlayer insulating layer 114.

[0082] The source electrode 126 and drain electrode 127, together with the gate electrode 123 and active layer 122, constitute a thin-film transistor TR. The thin-film transistor TR can be a driving transistor. For example, it may be the sixth transistor T6 in Figure 1, but the embodiments of the present invention are not limited thereto.

[0083] On the other hand, the power supply wiring 128 is positioned at a distance from the thin-film transistor TR and the light-shielding layer 121. The power supply wiring 128 can transmit a high potential voltage VDD.

[0084] The source electrode 126, drain electrode 127, and power wiring 128 are formed from a conductive material such as metal, and can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or alloys thereof. The source electrode 126, drain electrode 127, and power wiring 128 may have a single-layer structure or a multi-layer structure.

[0085] A passivation layer 115 is provided above the source electrode 126, drain electrode 127, and power supply wiring 128. The passivation layer 115 can cover substantially the entire surface of the substrate 110. The passivation layer 115 may be a single layer or a multilayer made of an inorganic insulating material. The inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON).

[0086] A first planarization layer 116 is provided above the passivation layer 115. The first planarization layer 116 is positioned substantially over the entire surface of the substrate 110.

[0087] The first planarization layer 116 eliminates the step caused by the lower film and has a substantially flat upper surface. The first planarization layer 116 can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic).

[0088] A reflective electrode 132 and a first connecting electrode 134 are provided on the upper part of the first planarization layer 116. The reflective electrode 132 overlaps the thin-film transistor TR, and the first capacitor electrode 124 and the second capacitor electrode 125, and contacts the source electrode 126 on the upper part of the first capacitor electrode 124 and the second capacitor electrode 125 through contact holes provided in the passivation layer 115 and the first planarization layer 116. As a result, the reflective electrode 132 is electrically connected to the second capacitor electrode 125 via the source electrode 126.

[0089] The first connecting electrode 134 overlaps the power supply wiring 128 and contacts the power supply wiring 128 through contact holes provided in the passivation layer 115 and the first planarization layer 116.

[0090] The reflective electrode 132 and the first connecting electrode 134 can be formed from a metallic material with relatively high reflectivity. For example, the reflective electrode 132 and the first connecting electrode 134 can be formed from aluminum (Al), silver (Ag), or chromium (Cr).

[0091] An adhesive layer 117 is provided on top of the reflective electrode 132 and the first connecting electrode 134. The adhesive layer 117 is distributed over substantially the entire surface of the substrate 110 and fixes the transferred light-emitting element 140 in place.

[0092] The adhesive layer 117 has a flat upper surface and can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic). Alternatively, the adhesive layer 117 can be formed from any one of the following: polyimide (PI) resin, epoxy resin, urethane resin, or polydimethylsiloxane (PDMS) resin.

[0093] A light-emitting element 140 is provided on top of the adhesive layer 117. The light-emitting element 140 overlaps the reflective electrode 132. The light-emitting element 140 may also overlap the thin-film transistor TR and the light-shielding layer 121.

[0094] The light-emitting element 140 can take the form of a light-emitting diode chip (microLED chip, μLED chip) including an n electrode, an n-type layer, an active layer, a p-type layer, and a p electrode. It can have a horizontal (lateral) structure in which the n electrode and the p electrode are provided on the same side (for example, the side opposite to the side facing the substrate 110), and light is emitted from the side on which the n electrode and the p electrode are provided (for example, the side opposite to the side facing the substrate 110).

[0095] However, the embodiments of the present invention are not limited thereto. In other embodiments, the light-emitting element 140 may have a flip-chip structure in which the n electrode and p electrode are provided on the same side (for example, the side facing the substrate 110) and light is emitted from the opposite side of the side on which the n electrode and p electrode are provided (for example, the side opposite to the side facing the substrate 110), or it may have a vertical structure in which the n electrode and p electrode are provided on opposite sides of each other.

[0096] The first light-emitting element 140 includes a first element electrode 141, a second element electrode 142, a semiconductor layer 143, a first protective layer 144, an auxiliary electrode 145, and a second protective layer 146.

[0097] The first element electrode 141 and the second element electrode 142 are spaced apart on the upper surface of the semiconductor layer 143, and the semiconductor layer 143 may include an n-type layer, an active layer, and a p-type layer. The semiconductor layer 143 has a step on its upper surface, and the first element electrode 141 and the second element electrode 142 are located at different heights. For example, the second element electrode 142 may be positioned higher than the first element electrode 141.

[0098] Here, the first element electrode 141 may be an n electrode, and the second element electrode 142 may be a p electrode. In this case, the first element electrode 141 may be a cathode, and the second element electrode 142 may be an anode.

[0099] However, the embodiments of the present invention are not limited thereto. In other embodiments, the first element electrode 141 may be a p electrode and the second element electrode 142 may be an n electrode. In this case, the first element electrode 141 may be an anode and the second element electrode 142 may be a cathode.

[0100] A first protective layer 144 is provided on the upper part of the semiconductor layer 143 on which the first element electrode 141 and the second element electrode 142 are provided. The first protective layer 144 covers and protects the first element electrode 141, the second element electrode 142 and the semiconductor layer 143, while exposing a portion of the upper surface of the first element electrode 141 and the second element electrode 142.

[0101] An auxiliary electrode 145 is provided on the upper part of the first protective layer 144. The auxiliary electrode 145 is provided corresponding to the upper and side surfaces of the semiconductor layer 143, overlapping with the first element electrode 141 and spaced apart from the second element electrode 142. The auxiliary electrode 145 contacts the exposed upper surface of the first element electrode through a contact hole provided in the first protective layer 144.

[0102] A second protective layer 146 is provided on the upper part of the auxiliary electrode 145. The second protective layer 146 covers and protects the auxiliary electrode 145 and is in contact with the first protective layer 144.

[0103] The second protective layer 146 exposes a portion of the auxiliary electrode 145 and a portion of the second element electrode 142. At this time, the second protective layer 146 contacts the auxiliary electrode 145, which is provided on the upper surface of the semiconductor layer 143, while covering it, and exposes the auxiliary electrode 145, which is provided on the side surface of the semiconductor layer 143. In addition, the second protective layer 146 exposes the upper surface of the exposed second element electrode 142 through the contact hole of the first protective layer 144.

[0104] Next, a second planarization layer 118 is provided on top of the adhesive layer 117 on which the light-emitting element 140 is provided. The second planarization layer 118 is arranged substantially over the entire surface of the substrate 110. The second planarization layer 118 can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic) and has a flat top surface.

[0105] The thickness of the second planarization layer 118 is thinner than the thickness of the light-emitting element 140, and the second planarization layer 118 exposes the auxiliary electrode 145 and the second element electrode 142 of the light-emitting element 140. At this time, the second planarization layer 118 is located on the side surface of the semiconductor layer 143 and exposes the auxiliary electrode 145 provided therein.

[0106] The first electrode 152, the second connecting electrode 154, and the contact electrode 156 are provided on the upper part of the second flattening layer 118.

[0107] The first electrode 152 overlaps the light-emitting element 140 and is connected to the auxiliary electrode 145 of the light-emitting element 140. At this time, the first electrode 152 is in contact with the auxiliary electrode 145 that is exposed corresponding to the side surface of the semiconductor layer 143, but is not provided on the upper part of the auxiliary electrode 145 that is provided corresponding to the upper surface of the semiconductor layer 143.

[0108] Furthermore, the first electrode 152 overlaps the reflective electrode 132 and contacts the reflective electrode 132 through contact holes provided in the adhesive layer 117 and the second planarization layer 118.

[0109] Therefore, the first electrode 152 is electrically connected to the source electrode 126 and second capacitor electrode 125 of the thin-film transistor TR via the reflective electrode 132, and the first element electrode 141 of the light-emitting element 140 is electrically connected to the source electrode 126 and second capacitor electrode 125 of the thin-film transistor TR via the auxiliary electrode 145, the first electrode 152, and the reflective electrode 132.

[0110] The second connecting electrode 154 overlaps the first connecting electrode 134 and contacts the first connecting electrode 134 through contact holes provided in the adhesive layer 117 and the second planarization layer 118. Therefore, the second connecting electrode 154 is electrically connected to the power supply wiring 128 via the first connecting electrode 134.

[0111] Meanwhile, the contact electrode 156 overlaps the reflective electrode 132, the source electrode 126, the first capacitor electrode 124, and the second capacitor electrode 125. The contact electrode 156 contacts the reflective electrode 132 through contact holes provided in the adhesive layer 117 and the second planarization layer 118.

[0112] Therefore, the contact electrode 156 is electrically connected to the source electrode 126 and the second capacitor electrode 125 of the thin-film transistor TR via the reflective electrode 132. The contact electrode 156 can also be electrically connected to the first electrode 152, and to the auxiliary electrode 145 and the first element electrode 141 of the light-emitting element 140 via the reflective electrode 132.

[0113] The first electrode 152, the second connecting electrode 154, and the contact electrode 156 can be formed from a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). Alternatively, the first electrode 152, the second connecting electrode 154, and the contact electrode 156 can also be formed from a metallic material. For example, they can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or alloys thereof.

[0114] A third planarization layer 119 is provided above the first electrode 152, the second connecting electrode 154, and the contact electrode 156. The third planarization layer 119 is distributed substantially over the entire surface of the substrate 110. The third planarization layer 119 can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic) and has a flat top surface.

[0115] The third planarization layer 119 covers the light-emitting element 140 and the first electrode 152, while exposing a portion of the light-emitting element 140. Specifically, the third planarization layer 119 covers the first element electrode 141 and the auxiliary electrode 145 of the light-emitting element 140, while exposing the second element electrode 142 of the light-emitting element 140.

[0116] Furthermore, the third planarization layer 119 partially exposes the second connecting electrode 154 and the contact electrode 156.

[0117] Next, a second electrode 162 is provided on the upper part of the third planarization layer 119. The second electrode 162 overlaps the light-emitting element 140, the first electrode 152, and the second connecting electrode 154, and is spaced apart from the contact electrode 156.

[0118] Specifically, the second electrode 162 overlaps with the first element electrode 141 and the second element electrode 142 of the light-emitting element 140, as well as the auxiliary electrode 145, and contacts the exposed second element electrode 142. The second electrode 162 may also overlap a portion of the first electrode 152.

[0119] The second electrode 162 extends and overlaps with the second connecting electrode 154, and contacts the second connecting electrode 154 through a contact hole provided in the third planarization layer 119. Therefore, the second electrode 162 is electrically connected to the first connecting electrode 134 via the second connecting electrode 154, and the second element electrode 142 of the light-emitting element 140 is electrically connected to the power supply wiring 128 via the second electrode 162, the first connecting electrode 134, and the second connecting electrode 154.

[0120] In this configuration, the second electrode 162 can contact the second connecting electrode 154 through at least two contact holes. This improves the contact between the second electrode 162 and the second connecting electrode 154.

[0121] The second electrode 162 can be formed from a transparent conductive material such as ITO or IZO. Alternatively, the second electrode 162 can be formed from a metallic material. For example, it can be formed from at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof.

[0122] Thus, in the light-emitting diode display device according to the embodiment of the present invention, the distance d1 between the first electrode 152 and the second electrode 162 can be increased by connecting the first electrode 152 to the side surface of the light-emitting element 140 and the second electrode 162 to the upper surface of the light-emitting element 140.

[0123] In other words, the light-emitting element 140 is provided with an auxiliary electrode 145 that contacts the first element electrode 141, exposing the auxiliary electrode 145 provided on the side surface of the semiconductor layer 143 and bringing it into contact with the first electrode 152. As a result, compared to a light-emitting diode display device that includes a light-emitting element without an auxiliary electrode, the distance d1 between the first electrode 152 and the second electrode 162 can be increased, thus preventing short-circuit defects in which the first element electrode 141 and the second element electrode 142 of the light-emitting element 140 are short-circuited by contact between the first electrode 152 and the second electrode 162.

[0124] A method for manufacturing a light-emitting diode display device according to an embodiment of the present invention, which includes a light-emitting element 140 having such auxiliary electrodes 145, will be described with reference to Figures 4A to 4K.

[0125] Figures 4A to 4K are schematic cross-sectional views showing a light-emitting diode display device in the manufacturing process according to an embodiment of the present invention. Please refer to Figure 3 for further explanation.

[0126] As shown in Figure 4A, a conductive material is deposited on the upper part of the substrate 110, a photoetching process is performed, and a patterning process is carried out to form a light-shielding layer 121. An inorganic insulating material is deposited on top of the light-shielding layer 121 to form a buffer layer 111 substantially over the entire surface of the substrate 110. Then, a semiconductor material is deposited on top of the buffer layer 111, a photoetching process is performed, and a patterning process is carried out to form an active layer 122.

[0127] Next, an inorganic insulating material is deposited on top of the active layer 122 to form a gate insulating layer 112, a conductive material is deposited on top of the gate insulating layer 112, a photoetching process is performed, and patterning is carried out to form the gate electrode 123 and the first capacitor electrode 124.

[0128] Next, an inorganic insulating material is deposited on the gate electrode 123, the first capacitor electrode 124, and the top of the gate insulating layer 112 to form the first interlayer insulating layer 113. Then, a conductive material is deposited on the top of the first interlayer insulating layer 113, and a photoetching process is performed, followed by patterning to form the second capacitor electrode 125.

[0129] Next, an inorganic insulating material is deposited on the upper part of the second capacitor electrode 125 and the first interlayer insulating layer 113 to form the second interlayer insulating layer 114. A photoetching process is then performed, and the layer is patterned to form contact holes that expose the second capacitor electrode 125. In addition, the first interlayer insulating layer 113 and the gate insulating layer 112 are also patterned together with the second interlayer insulating layer 114 to form contact holes that expose the active layer 122.

[0130] Next, a conductive material is deposited on top of the second interlayer insulating layer 114, a photoetching process is performed, and patterning is carried out to form the source electrode 126, drain electrode 127, and power supply wiring 128.

[0131] The source electrode 126 and drain electrode 127 contact the ends of the active layer 122 on both sides, respectively, through contact holes provided in the first interlayer insulating layer 113, the second interlayer insulating layer 114, and the gate insulating layer 112. The active layer 122, gate electrode 123, source electrode 126, and drain electrode 127 constitute a thin-film transistor TR.

[0132] Furthermore, the source electrode 126 also contacts the second capacitor electrode 125 through a contact hole provided in the second interlayer insulating layer 114.

[0133] Next, an inorganic insulating material is deposited on top of the source electrode 126, drain electrode 127, and power supply wiring 128 to form a passivation layer 115, and an organic insulating material is applied on top of the passivation layer 115 to form a first planarization layer 116. Subsequently, the first planarization layer 116 and the passivation layer 115 are patterned by a photoetching process to form contact holes that expose the source electrode 126 and power supply wiring 128.

[0134] Next, a conductive material is deposited on top of the first planarization layer 116, a photoetching process is performed, and patterning is carried out to form the reflective electrode 132 and the first connecting electrode 134. Through contact holes provided in the passivation layer 115 and the first planarization layer 116, the reflective electrode 132 contacts the source electrode 126, and the first connecting electrode 134 contacts the power supply wiring 128.

[0135] Next, as shown in Figure 4B, an adhesive material layer 117a is formed on top of the first planarization layer 116 on which the reflective electrode 132 and the first connecting electrode 134 are provided, and the light-emitting element 140 is transferred onto the top of the adhesive material layer 117a.

[0136] Here, the light-emitting element 140 includes a first element electrode 141, a second element electrode 142, a semiconductor layer 143, a first protective layer 144, an auxiliary electrode 145, and a second protective layer 146.

[0137] As described above, the light-emitting element 140 is formed by first self-assembling a light-emitting element 140a without the auxiliary electrode 145 onto a self-assembling substrate, then forming the auxiliary electrode 145 and the second protective layer 146, and finally using a donor, transferring the light-emitting element 140 including the auxiliary electrode 145 from the self-assembling substrate onto a substrate 110 on which an adhesive material layer 117a is provided.

[0138] Next, as shown in Figure 4C, an organic insulating material is applied to the upper part 117a of the adhesive material layer 117a on which the light-emitting element 140 is provided to form a second planarization layer 118. After that, a photoetching process is performed and patterning is carried out to expose the upper surface of the adhesive material layer 117a corresponding to the reflective electrode 132 and the first connecting electrode 134. At this time, since the thickness of the second planarization layer 118 is smaller than the thickness of the light-emitting element 140, the second planarization layer 118 can expose the second element electrode 142 and cover the auxiliary electrode 145 provided corresponding to the side surface of the semiconductor layer 143.

[0139] Next, an ashing process is performed to partially remove the second planarization layer 118. As a result, the thickness of the second planarization layer 118 is reduced, and the auxiliary electrodes 145, which are provided corresponding to the side surface of the semiconductor layer 143, are exposed. At this time, the width of the second planarization layer 118 is reduced along with its thickness by the ashing process.

[0140] Next, as shown in Figure 4D, a photoresist is applied to the top of the light-emitting element 140 and the second planarization layer 118, and a photoetching process is performed after exposure to form the first photoresist pattern 192. The first photoresist pattern 192 covers the light-emitting element 140 and the second planarization layer 118, corresponds to the reflective electrode 132 and the first connecting electrode 134, and exposes the upper surface of the adhesive material layer 117a.

[0141] In this case, the width of the first photoresist pattern 192 may be greater than the width of the second planarization layer 118, and the distance between adjacent first photoresist patterns 192 may be less than the distance between adjacent second planarization layers 118.

[0142] Next, as shown in Figure 4E, the first photoresist pattern 192 is used as an etching mask to selectively remove the exposed adhesive material layer 117a, thereby forming an adhesive layer 117 having contact holes that expose the reflective electrode 132 and the first connecting electrode 134. At this time, the adhesive material layer 117a can be removed by a dry etching process, the width of the adhesive layer 117 may be greater than the width of the second planarization layer 118, and the distance between adjacent adhesive layers 117 may be smaller than the distance between adjacent second planarization layers 118.

[0143] Next, the first photoresist pattern 192 is stripped and removed.

[0144] Next, as shown in Figure 4F, a conductive material is deposited on top of the light-emitting element 140 and the second planarization layer 118 to form a conductive material layer 150 substantially over the entire surface of the substrate 110.

[0145] The conductive material layer 150 is in contact with the top and side surfaces of the light-emitting element 140, the top and side surfaces of the second planarization layer 118, and the top and side surfaces of the adhesive layer 117. The conductive material layer 150 is also in contact with the reflective electrode 132 and the first connecting electrode 134 through contact holes provided in the adhesive layer 117 and the second planarization layer 118.

[0146] Next, as shown in Figure 4G, a photoresist is applied to the top of the conductive material layer 150, and a photoetching process is performed after exposure to form a second photoresist pattern 194. The second photoresist pattern 194 covers the portion of the conductive material layer 150 corresponding to the first element electrode 141 of the light-emitting element 140, and exposes the portion of the conductive material layer 150 corresponding to the second element electrode 142. The second photoresist pattern 194 also covers the portion of the conductive material layer 150 corresponding to the contact holes of the adhesive layer 117 and the second planarization layer 118, and exposes the other portions of the conductive material layer 150.

[0147] Next, the second photoresist pattern 194 is used as an etching mask to selectively remove the exposed conductive material layer 150, thereby forming a conductive material pattern 150a and exposing the second element electrode 142 and the second planarization layer 118.

[0148] Next, as shown in Figure 4H, an ashing process is performed to partially remove the second photoresist pattern 194, forming a second photoresist pattern 194a with reduced thickness and width. As a result, the conductive material pattern 150a corresponding to the first element electrode 141 is exposed.

[0149] Next, the second photoresist pattern 194a is used as an etching mask to selectively remove the exposed conductive material pattern 150a, thereby forming the first electrode 152, the second connecting electrode 154, and the contact electrode 156. Then, as shown in Figure 4I, the second photoresist pattern 194a is stripped and removed. At this time, the first electrode 152 corresponds to the side surface of the semiconductor layer 143 and contacts the exposed auxiliary electrode 145, but is not formed on the upper surface of the semiconductor layer 143.

[0150] Next, as shown in Figure 4J, an organic insulating material is applied to the top of the first electrode 152, the second connecting electrode 154, and the contact electrode 156 to form a third planarization layer 119. By patterning with a photoetching process, contact holes are formed that expose the second connecting electrode 154 and the contact electrode 156. At this time, the third planarization layer 119 can cover the light-emitting element 140 and the first electrode 152.

[0151] Next, an ashing process is performed to partially remove the third planarization layer 119. As a result, the thickness of the third planarization layer 119 is reduced, and the second element electrode 142 of the light-emitting element 140 is exposed. At this time, the width of the third planarization layer 119 is reduced along with its thickness by the ashing process.

[0152] Next, as shown in Figure 4K, a conductive material is deposited on top of the third planarization layer 119, and a photoetching process is performed to create a pattern, thereby forming the second electrode 162. The second electrode 162 covers the light-emitting element 140 and contacts the second element electrode 142 of the exposed light-emitting element 140. The second electrode 162 also contacts the second connecting electrode 154 through the contact hole in the third planarization layer 119.

[0153] The second electrode 162 is configured to overlap not only the second element electrode 142 but also the first element electrode 141, taking into account a margin for deviations in the process. At this time, if organic matter is not completely removed during the process of removing the second planarization layer 118, the first photoresist pattern 192, and the second photoresist pattern 194 after they have been formed on the upper part of the first element electrode 141, the distance between the first electrode 152 connected to the first element electrode 141 and the second electrode 162 connected to the second element electrode 142 will be shortened. Therefore, if the auxiliary electrode 145 is not provided, the second electrode 162 will come into contact with the first electrode 152, and there is a risk of a short circuit between the first element electrode 141 and the second element electrode 142 of the light-emitting element 140.

[0154] However, in the embodiment of the present invention, the first element electrode 141 is covered by the auxiliary electrode 145 and the second protective layer 146, and the first electrode 152 is in contact with the auxiliary electrode 145 provided on the side surface of the semiconductor layer 143. As a result, the distance between the first electrode 152 and the second electrode 162 increases compared to the case where the auxiliary electrode 145 is not provided. Therefore, a short circuit between the first element electrode 141 and the second element electrode 142 of the light-emitting element 140 can be prevented.

[0155] On the other hand, the light-emitting element 140 may also be further provided with an auxiliary electrode connected to the second element electrode 142. Another embodiment of the present invention, a light-emitting diode display device, will be described with reference to Figure 5.

[0156] Figure 5 is a schematic cross-sectional view showing a light-emitting diode display device according to another embodiment of the present invention. Since the light-emitting diode display device according to the other embodiment of the present invention has substantially the same configuration as the embodiment described above, except for the configuration of the auxiliary electrodes, the same or similar reference numerals are used for the same parts, and their descriptions are simplified or omitted.

[0157] As shown in Figure 5, in another embodiment of the present invention, a light-emitting diode display device is configured such that a light-emitting element 140 is transferred onto the adhesive layer 117. The light-emitting element 140 includes a first element electrode 141, a second element electrode 142, a semiconductor layer 143, a first protective layer 144, a first auxiliary electrode 145, a second protective layer 146, and a second auxiliary electrode 148.

[0158] The first auxiliary electrode 145 contacts the first element electrode 141, and the second auxiliary electrode 148 is connected to the second element electrode 142. The first auxiliary electrode 145 and the second auxiliary electrode 148 are provided corresponding to the top surface and side surface of the semiconductor layer 143.

[0159] A second protective layer 146 is provided above the first auxiliary electrode 145 and the second auxiliary electrode 148. The second protective layer 146 covers the first auxiliary electrode 145 and the second auxiliary electrode 148 corresponding to the upper surface of the semiconductor layer 143, and exposes the first auxiliary electrode 145 and the second auxiliary electrode 148 corresponding to the side surface of the semiconductor layer 143.

[0160] Next, a second planarization layer 118 is provided on top of the adhesive layer 117 on which the light-emitting element 140 is provided, and the second planarization layer 118 exposes the first auxiliary electrode 145 and the second auxiliary electrode 148.

[0161] Next, a first electrode 152, a second connecting electrode 154, and a contact electrode 156 are provided on the upper part of the second planarization layer 118. The first electrode 152 corresponds to the side surface of the semiconductor layer 143 and contacts the exposed first auxiliary electrode 145, but is not provided on the upper surface of the first auxiliary electrode 145, which corresponds to the upper surface of the semiconductor layer 143.

[0162] A third planarization layer 119 is provided above the first electrode 152, the second connecting electrode 154, and the contact electrode 156. The third planarization layer 119 covers the first electrode 152, the first element electrode 141 and the second auxiliary electrode 148 of the light-emitting element 140, and exposes a portion of the second auxiliary electrode 148 of the light-emitting element 140. At this time, the third planarization layer 119 exposes the second auxiliary electrode 148 corresponding to the side surface of the semiconductor layer 143.

[0163] Next, a second electrode 162 is provided on the upper part of the third planarization layer 119. The second electrode 162 covers the light-emitting element 140, corresponds to the side surface of the semiconductor layer 143, and contacts the exposed second auxiliary electrode 148.

[0164] As described above, in the light-emitting diode display device according to another embodiment of the present invention, a first auxiliary electrode 145 and a second auxiliary electrode 148 are provided, and the first electrode 152 and the second electrode 162 are connected to different sides of the light-emitting element 140. This increases the distance between the first electrode 152 and the second electrode 162 compared to a light-emitting diode display device that includes a light-emitting element without auxiliary electrodes. Therefore, it is possible to prevent short-circuit defects in which the first element electrode 141 and the second element electrode 142 of the light-emitting element 140 are short-circuited due to contact between the first electrode 152 and the second electrode 162.

[0165] As described above with reference to preferred embodiments of the present invention, a person with ordinary skill in the relevant art will understand that the present invention can be modified or altered in various ways without departing from the technical idea and scope of the invention as described in the claims. [Explanation of Symbols]

[0166] 110...Base substrate, TR...Thin film transistor, 132...Reflective electrode, 134...First connecting electrode, 140...Light-emitting element, 141...First element electrode, 142...Second element electrode, 143...Semiconductor layer, 144...First protective layer, 145...First auxiliary electrode, 146...Second protective layer, 148...Second auxiliary electrode, 152...First electrode, 162...Second electrode

Claims

1. It is a light-emitting diode, Semiconductor layer, The first element electrode on the upper part of the semiconductor layer, The second element electrode on the upper part of the semiconductor layer, A first auxiliary electrode connected to the first element electrode and positioned on one side surface of the light-emitting diode, A first protective layer on the upper part of the first element electrode and the second element electrode, A light-emitting diode comprising the first auxiliary electrode and a second protective layer on top of the first protective layer.

2. The light-emitting diode according to claim 1, wherein the position of the second element electrode is higher than the position of the first element electrode.

3. The first protective layer exposes the first element electrode and the second element electrode. The light-emitting diode according to claim 1, wherein the first protective layer extends from the upper surface of the first element electrode to the side surface of the semiconductor layer.

4. The light-emitting diode according to claim 1, wherein the second protective layer is in contact with the first auxiliary electrode and exposes the first auxiliary electrode which is disposed on one side surface of the light-emitting diode.

5. The first auxiliary electrode contacts the upper surface of the first element electrode and extends from the upper surface of the first element electrode to one side of the light-emitting diode. The light-emitting diode according to claim 1, wherein the first auxiliary electrode covers the first protective layer on the upper part of one side surface of the light-emitting diode.

6. The present invention further includes a second auxiliary electrode disposed on the other side of the light-emitting diode, The light-emitting diode according to claim 1, wherein the other side of the light-emitting diode is separated from the one side of the light-emitting diode.

7. The second auxiliary electrode contacts the upper surface of the second element electrode and extends from the second element electrode to the other side of the light-emitting diode. The light-emitting diode according to claim 6, wherein the second auxiliary electrode covers the first protective layer on the other side surface of the light-emitting diode, and the second protective layer exposes the second auxiliary electrode disposed on the other side surface of the light-emitting diode.

8. The light-emitting diode according to claim 6, wherein the first auxiliary electrode has a first region exposed by the second protective layer, and the second auxiliary electrode has a second region exposed by the second protective layer, and the second region of the second auxiliary electrode is located higher than the first region of the first auxiliary electrode.

9. The first protective layer extends from the upper surface of the first auxiliary electrode to the side surface of the semiconductor layer, The light-emitting diode according to claim 1, wherein the second protective layer exposes the first auxiliary electrode disposed on the side surface of the semiconductor layer.

10. circuit board and A light-emitting element is provided on the upper part of the substrate, and includes a first element electrode, a second element electrode, and an auxiliary electrode. A first electrode connected to the first element electrode, It includes a second electrode provided on the upper part of the first electrode and connected to the second element electrode, The first element electrode and the second element electrode are spaced apart from each other, and the auxiliary electrode is positioned on at least one side of the light-emitting element. A light-emitting device in which at least one of the first electrode and the second electrode is connected to at least one of the first element electrode and the second element electrode by the auxiliary electrode.

11. A thin-film transistor is provided on the upper part of the aforementioned substrate, The light-emitting device display according to claim 10, further comprising a reflective electrode provided on the upper part of the thin-film transistor and connected to the thin-film transistor and the first electrode.

12. The above substrate is provided on the upper part and further includes power supply wiring spaced apart from the thin-film transistor, The light-emitting element display device according to claim 11, wherein the power supply wiring is located on the same layer as the source electrode and drain electrode of the thin-film transistor.

13. The thin-film transistor and a first connecting electrode provided on the upper part of the power supply wiring are further included. The light-emitting device display according to claim 12, wherein the first connecting electrode is connected to the power supply wiring.

14. The device further includes a second connecting electrode provided on the upper part of the first connecting electrode and in contact with the first connecting electrode, The light-emitting device according to claim 13, wherein the second electrode is connected to the second connecting electrode.

15. An adhesive layer provided on the upper part of the reflective electrode, A second planarization layer, wherein the first electrode is provided on its upper part, The present invention further includes a third planarization layer covering the first electrode, The second electrode is positioned on top of the third planarization layer, The light-emitting element display device according to claim 14, wherein the second electrode contacts the second connecting electrode through a contact hole provided in the third planarization layer.

16. The first capacitor electrode and Further including a second capacitor electrode above the first capacitor electrode, The light-emitting device display according to claim 11, wherein the second capacitor electrode is electrically connected to the thin-film transistor.

17. The first electrode is in contact with the first auxiliary electrode of the auxiliary electrode, which is positioned on one side of the light-emitting element. The light-emitting device according to claim 10, wherein the second electrode is in contact with the second auxiliary electrode of the auxiliary electrode which is arranged on the other side of the light-emitting element.

18. The second auxiliary electrode contacts the upper surface of the second element electrode and extends from the second element electrode to the other side of the light-emitting element. The light-emitting device according to claim 17, wherein the second auxiliary electrode covers the first protective layer on the other side of the light-emitting element, and the second protective layer exposes the second auxiliary electrode positioned on the other side of the light-emitting element.

19. The light-emitting device according to claim 13, wherein the first connecting electrode and the reflective electrode are located in the same layer and contain the same material.

20. The light-emitting device according to claim 15, wherein the first element electrode is provided on the upper part of the second planarization layer.

Images