Method for forming an electrode layer on a substrate, and apparatus for forming an electrode layer on a substrate
JP2026085806APending Publication Date: 2026-05-25TOKYO ELECTRON LTD
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Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2024-11-13
- Publication Date
- 2026-05-25
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Figure 2026085806000001_ABST
Abstract
To form an electrode layer consisting of a first layer containing titanium and nitrogen, and a second layer containing vanadium and nitrogen. [Solution] The electrode layer is formed by stacking the first and second layers, comprising the steps of: performing a first cycle at least once in which a titanium-containing titanium raw material gas and a nitriding gas for nitriding titanium are alternately supplied to a substrate, thereby forming a first layer containing titanium and nitrogen; and performing a second cycle at least once in which a vanadium-containing vanadium raw material gas and a nitriding gas for nitriding vanadium are alternately supplied to the substrate, thereby forming a second layer containing vanadium and nitrogen. The set of steps of forming the first layer and forming the second layer is performed at least once to form an electrode layer in which the first and second layers are stacked.
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