Semiconductor device, FET, and method for manufacturing the same semiconductor device

By introducing dopants and insulating films to separate conductive and non-conductive regions in diamond semiconductor devices, contamination issues are mitigated, improving performance and reliability.

JP2026085925APending Publication Date: 2026-05-26NAT INST FOR MATERIALS SCI
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NAT INST FOR MATERIALS SCI
Filing Date
2024-11-14
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Hydrogen-terminated diamond semiconductor surfaces in FETs are prone to contamination from resist, metal etching residues, and atmospheric impurities, leading to degraded performance, reliability, and stability of semiconductor devices.

Method used

A semiconductor device configuration with conductive and non-conductive regions using diamond as the semiconductor layer, where dopants are introduced in the non-conductive regions, and insulating films are formed to separate these regions, utilizing elements like nitrogen and hydrogen to bond with carbon atoms, thereby preventing contamination.

Benefits of technology

The solution effectively suppresses impurity inclusion and foreign matter generation, enhancing channel mobility, yield, quality, and reliability of diamond semiconductor devices.

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Abstract

The present invention provides a diamond semiconductor device and a method for manufacturing the same, which use the terminal surface as a carrier conduction layer and have improved channel mobility, yield, quality, and reliability. [Solution] A method for manufacturing a semiconductor element that uses diamond as a semiconductor layer and has a conductive region and a non-conductive region, wherein a dopant is applied to at least a portion of the surface layer of the semiconductor layer in the non-conductive region. 13 cm -2 The above 10 17 cm -2 The following doping process is performed to bond carbon atoms on at least a portion of the surface of both the conductive and nonconductive regions with atoms of the same type of element, or atoms of multiple element groups having the same proportion and distribution, thereby forming an insulating film above the semiconductor layer at locations that straddle at least a portion of the boundary region between the dopant-doped and undoped regions.
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