Semiconductor equipment

By implementing a resistive element with varying impurity concentrations in semiconductor devices, the device addresses resistance fluctuations caused by hydrogen absorption, maintaining stable voltage division and enhancing reliability.

JP2026086051APending Publication Date: 2026-05-26FUJI ELECTRIC CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
FUJI ELECTRIC CO LTD
Filing Date
2024-11-14
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing semiconductor devices experience variations in voltage-dividing resistors due to the hydrogen absorption effect of titanium in metal wirings, leading to fluctuations in resistance values over time.

Method used

The semiconductor device incorporates a resistive element with a high impurity concentration portion between the voltage-dividing point and the connection to the ground potential, and a low impurity concentration portion adjacent to the metal wiring, to minimize the impact of hydrogen absorption and maintain stable resistance values.

Benefits of technology

This configuration reduces variations in voltage-dividing resistors, ensuring long-term reliability and stable voltage division ratios by minimizing resistance shifts during manufacturing and operational conditions.

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Abstract

The present invention provides a semiconductor device that can reduce variations in the voltage divider resistance of resistive elements. [Solution] The semiconductor device comprises a semiconductor substrate 1, a first semiconductor region 5 provided on the semiconductor substrate 1, a second semiconductor region 4 provided on the semiconductor substrate 1, a first electrode 11 electrically connected to the first semiconductor region 5, a second electrode 10 electrically connected to the second semiconductor region 4, an insulating film 8 provided on the upper surface side of the semiconductor substrate 1, and a resistive element 20 provided on the upper surface side of the insulating film 8, with one end electrically connected to the first electrode 11 and the other end connected to the second electrode 10, and having a voltage divider point 27 on the other end side, wherein the resistive element 20 has a first resistive portion 20b that includes at least the portion from the other end to the voltage divider point 27, and a second resistive portion 20a that is provided on one end side of the first resistive portion 20b and continuous with the first resistive portion 20b, and has a lower impurity concentration than the first resistive portion 20b.
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