Wafer processing method

The wafer processing method forms a modified layer and delamination layer to safely remove the chamfered portion from a bonded wafer, addressing the challenge of effective chamfer removal without damaging the second wafer.

JP2026086077APending Publication Date: 2026-05-26DISCO CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
DISCO CORP
Filing Date
2024-11-14
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing methods struggle to effectively remove the chamfered portion from a bonded wafer without damaging the second wafer, particularly when using siloxane bonds, as conventional techniques like laser irradiation and cutting are inadequate.

Method used

A wafer processing method involving a modified layer formation using a laser beam to create a ring-shaped modified layer and a delamination layer formation with a fluid to weaken the bonding force, followed by surface irregularity formation to enhance fluid penetration, allowing easy removal of the chamfered portion without cutting.

Benefits of technology

The method enables efficient and safe removal of the chamfered portion from the first wafer, preventing damage to the second wafer, by forming a modified layer and delamination layer to weaken the bond, facilitating easy chamfer removal.

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Abstract

The present invention provides a wafer processing method that allows for the appropriate removal of the chamfered portion of the first wafer when processing a bonded wafer formed by joining a first wafer and a second wafer. [Solution] The method includes a modified layer formation step of positioning the focal point of a laser beam of a penetrating wavelength on the inside adjacent to the chamfered portion 17A formed on the outer circumference of the first wafer 10A and irradiating it to form a ring-shaped modified layer 110 for removing the chamfered portion 17A, and a peeling layer formation step of allowing a fluid L that weakens the bonding force between the first wafer 10A and the second wafer 10B to penetrate the bonding surface between the first wafer 10A and the second wafer 10B to form a peeling layer 21 in the region where the chamfered portion 17A is to be removed, before or after or at the same time as the modified layer formation step, and including a surface formation step of forming surface irregularities 100A in the region where the chamfered portion 17A is to be removed to promote the penetration of the fluid L before generating the bonded wafer W.
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