Semiconductor light-emitting device and method for manufacturing a semiconductor light-emitting device

Abstract

To improve the optical output and reliability of semiconductor light-emitting devices. [Solution] The semiconductor light-emitting device 10 comprises a package substrate 14 having a bonding surface 14a, a semiconductor light-emitting element 12 bonded to the bonding surface 14a, and a sealing member 16 that seals the bonding surface 14a and the semiconductor light-emitting element 12 and is light-transmitting at the emission wavelength of the semiconductor light-emitting element 12. The sealing member 16 includes a base portion 42 that contacts the bonding surface 14a and a lens portion 44 on the base portion 42. The outer surface of the base portion 42 has a shape in which the inclination angle θ1 with respect to the bonding surface 14a decreases as it approaches the bonding surface 14a. The outer surface of the lens portion 44 has a shape in which the inclination angle θ2 with respect to the bonding surface 14a decreases as it moves away from the bonding surface 14a. The height hb of the lens portion 44 is greater than the height hc of the base portion 42.

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device.

Background Art

[0002] A semiconductor light-emitting device in which a semiconductor light-emitting element bonded onto a package substrate is sealed with a silicone resin is known. For example, a technique has been proposed to improve light output by providing a frame portion around the semiconductor light-emitting element on the package substrate, filling a sealing resin inside the frame portion, and forming the sealing resin in a dome shape (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When the sealing resin is provided inside the frame portion, the distortion caused by the difference in the materials of the sealing resin and the frame portion becomes large, and the peeling or cracking of the sealing resin is likely to occur. On the other hand, when attempting to form the sealing resin in a dome shape without using a frame portion, the sealing resin flows out from the package substrate, making it difficult to form a dome shape.

[0005] The present invention has been made in view of such problems, and an object thereof is to provide a technique for improving the light output and reliability of a semiconductor light-emitting device.

Means for Solving the Problems

[0006] A semiconductor light-emitting device according to one aspect of the present invention comprises a package substrate having a bonding surface, a semiconductor light-emitting element bonded to the bonding surface, and a sealing member that seals the bonding surface and the semiconductor light-emitting element and is light-transmitting at the emission wavelength of the semiconductor light-emitting element. The sealing member includes a base that contacts the bonding surface and a lens portion on the base. The outer surface of the base has a shape in which the angle of inclination with respect to the bonding surface decreases as it approaches the bonding surface. The outer surface of the lens portion has a shape in which the angle of inclination with respect to the bonding surface decreases as it moves away from the bonding surface. The height of the lens portion is greater than the height of the base.

[0007] Another aspect of the present invention is a method for manufacturing a semiconductor light-emitting device. This method comprises the steps of: applying a liquid thermosetting resin to cover the bonding surface of a package substrate and a semiconductor light-emitting element bonded to the bonding surface; and heating and curing the liquid thermosetting resin in an orientation such that the liquid thermosetting resin is located vertically below the package substrate to form a sealing member. [Effects of the Invention]

[0008] According to the present invention, the optical output and reliability of semiconductor light-emitting devices can be improved. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic perspective view showing the configuration of a semiconductor light-emitting device according to an embodiment. [Figure 2] This is a schematic cross-sectional view showing the configuration of a semiconductor light-emitting device according to an embodiment. [Figure 3] This is a flowchart showing a method for manufacturing a semiconductor light-emitting device according to an embodiment. [Figure 4] This diagram schematically shows the manufacturing process of semiconductor light-emitting devices. [Figure 5] This diagram schematically shows the manufacturing process of semiconductor light-emitting devices. [Figure 6] This table shows the manufacturing conditions and characteristics of the semiconductor light-emitting device according to the example. [Figure 7] This graph shows the relationship between the ratio of the height and radius of curvature of the sealing member and the optical output. [Figure 8] This graph shows the relationship between the ratio of the height and radius of curvature of the sealing member and the durability of the sealing member. [Modes for carrying out the invention]

[0010] Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description, the same elements will be denoted by the same reference numerals, and redundant explanations will be omitted as appropriate. Furthermore, to aid in understanding the description, the dimensional ratios of each component in each drawing do not necessarily correspond to the dimensional ratios of the actual light-emitting element.

[0011] Figure 1 is a schematic perspective view showing the configuration of a semiconductor light-emitting device 10 according to an embodiment. The semiconductor light-emitting device 10 comprises a semiconductor light-emitting element 12, a package substrate 14, and a sealing member 16. The semiconductor light-emitting device 10 may further include a protective element 18.

[0012] The semiconductor light-emitting element 12 is configured to emit ultraviolet light with a central wavelength λ of approximately 360 nm or less. To output ultraviolet light of this wavelength, the semiconductor light-emitting element 12 includes an aluminum gallium nitride (AlGaN) semiconductor material with a band gap of approximately 3.4 eV or more. In this embodiment, a DUV-LED (Deep Ultra Violet-Light Emitting Diode) chip emitting deep ultraviolet light with a peak emission wavelength λ of 240 nm to 320 nm is particularly described.

[0013] The semiconductor light-emitting element 12 has a top surface 12a and a side surface 12b. The semiconductor light-emitting element 12 mainly emits ultraviolet light from the top surface 12a, but also emits ultraviolet light from the side surface 12b. The top surface 12a is, for example, rectangular. The size of the top surface 12a is not particularly limited, but for example it is 1 mm square. That is, the size of the sides of the top surface 12a is, for example, 1 mm. The height hc from the package substrate 14 to the top surface 12a of the semiconductor light-emitting element 12 is not particularly limited, but for example it is 0.1 mm or more, 0.2 mm or more, or 0.3 mm or more, and for example it is 1 mm or less, 0.7 mm or less, or 0.5 mm or less. The height hc of the semiconductor light-emitting element 12 is, for example, 0.45 mm.

[0014] The package substrate 14 has a flat plate shape and has a bonding surface 14a and a back surface 14b. The package substrate 14 is made of, for example, an inorganic material, and is composed of ceramic materials such as alumina (Al2O3), aluminum nitride (AlN), silicon nitride (SiN), and silicon carbide (SiC). The package substrate 14 does not have a frame portion extending upward from the bonding surface 14a.

[0015] The semiconductor light-emitting element 12 is bonded to the bonding surface 14a of the package substrate 14. The bonding surface 14a of the package substrate 14 is, for example, rectangular. The size of the bonding surface 14a is not particularly limited, but is, for example, 3.5 mm square. That is, the size of the sides of the bonding surface 14a is, for example, 3.5 mm. The size of the sides of the bonding surface 14a is at least twice or 2.5 times the size of the sides of the upper surface 12a of the semiconductor light-emitting element 12, and preferably at least three times or 3.5 times.

[0016] The sealing member 16 covers the semiconductor light-emitting element 12 and the bonding surface 14a of the package substrate 14. The sealing member 16 is translucent at the emission wavelength of the semiconductor light-emitting element 12. The sealing member 16 has an internal transmittance of 50% or more at the peak emission wavelength of the semiconductor light-emitting element 12, preferably 70% or more, 80% or more, or 90% or more. The sealing member 16 is made of, for example, a thermosetting silicone resin. The sealing member 16 is configured not to contain particles such as phosphors or fillers.

[0017] The sealing member 16 is provided so as to cover the entire bonding surface 14a except for the joint portion of the semiconductor light-emitting element 12 and the protection element 18. Therefore, the outer periphery of the sealing member 16 coincides with the outer periphery of the bonding surface 14a. The sealing member 16 is formed in a fillet shape at the outer periphery of the bonding surface 14a and has a shape in which the inclination angle of the outer surface 16a decreases as it approaches the bonding surface 14a. The sealing member 16 has a dome shape in which the radius of curvature decreases as it approaches the top portion 16b.

[0018] The height ha of the sealing member 16 is twice or more the height hc of the semiconductor light-emitting element 12, for example, three times or more or four times or more. The height ha of the sealing member 16 is larger than the size of the side of the upper surface 12a of the semiconductor light-emitting element 12, for example, 1.1 times or more, 1.5 times or more, or two times or more the size of the side of the upper surface 12a. The height ha of the sealing member 16 is smaller than the size of the side of the bonding surface 14a. The height ha of the sealing member 16 is, for example, 1 mm or more, 1.5 mm or more, or 2 mm or more, and for example, 3.5 mm or less, 3 mm or less, or 2.5 mm or less.

[0019] The height hb (= ha - hc) from the upper surface 12a of the semiconductor light-emitting element 12 to the top portion 16b of the sealing member 16 is larger than the height hc of the semiconductor light-emitting element 12, for example, larger than the size of the side of the upper surface 12a of the semiconductor light-emitting element 12. The height hb from the upper surface 12a of the semiconductor light-emitting element 12 to the top portion 16b of the sealing member 16 is, for example, 0.5 mm or more, 1 mm or more, or 1.5 mm or more, and for example, 3 mm or less, 2.5 mm or less, or 2 mm or less.

[0020] The protection element 18 is a diode that protects the semiconductor light-emitting element 12 from surge current and static electricity, for example, a Zener diode. The protection element 18 is joined to the bonding surface 14a of the package substrate 14. The protection element 18 is connected in parallel with the semiconductor light-emitting element 12. The protection element 18 is covered by the sealing member 16.

[0021] FIG. 2 is a cross-sectional view schematically showing the configuration of the semiconductor light-emitting device 10 according to the embodiment. FIG. 2 shows a cross-section in a direction along the side of the upper surface 12a of the semiconductor light-emitting element 12 or the bonding surface 14a of the package substrate 14.

[0022] The semiconductor light-emitting element 12 includes a translucent substrate 20, a semiconductor layer 22, an anode electrode 24, a cathode electrode 26, and a protective layer 28.

[0023] The translucent substrate 20 is made of a material having translucency with respect to the ultraviolet light emitted by the semiconductor light-emitting element 12. The light emitted by the semiconductor layer 22 is output from the translucent substrate 20 to the outside of the semiconductor light-emitting element 12. The translucent substrate 20 is made of, for example, sapphire (Al2O3). The translucent substrate 20 has an upper surface 12a and a side surface 12b from which ultraviolet light is output.

[0024] The semiconductor layer 22 is provided under the translucent substrate 20. The semiconductor layer 22 includes, for example, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The semiconductor layer 22 is made of an AlGaN-based semiconductor material. The AlGaN-based semiconductor material can be represented by the composition of In 1-x-y Al x Ga y N (0 <x + y ≦ 1, 0 <x <1, 0 <y <1). The semiconductor layer 22 is covered with the protective layer 28.

[0025] The anode electrode 24 includes a first contact electrode 24a and a first pad electrode 24b. The first contact electrode 24a is an internal electrode that contacts the semiconductor layer 22 and contacts the p-type semiconductor layer included in the semiconductor layer 22. The first contact electrode 24a is covered with the protective layer 28. The first pad electrode 24b is an external electrode exposed outside the protective layer 28 and is electrically connected to the first contact electrode 24a through an opening provided in the protective layer 28.

[0026] The cathode electrode 26 includes a second contact electrode 26a and a second pad electrode 26b. The second contact electrode 26a is an internal electrode that contacts the semiconductor layer 22 and contacts the n-type semiconductor layer contained in the semiconductor layer 22. The second contact electrode 26a is covered by a protective layer 28. The second pad electrode 26b is an external electrode exposed to the outside of the protective layer 28 and is electrically connected to the second contact electrode 26a through an opening provided in the protective layer 28.

[0027] The protective layer 28 covers the semiconductor layer 22, the first contact electrode 24a, and the second contact electrode 26a. The protective layer 28 is composed of a dielectric material such as an oxide or nitride, for example, silicon oxide (SiO2), aluminum oxide (Al2O3), or silicon nitride (SiN). The protective layer 28 may be composed of a laminate of multiple protective layers made of different materials.

[0028] The package substrate 14 includes a first bonding electrode 30 and a second bonding electrode 32 provided on the bonding surface 14a. The package substrate 14 also includes a first mounting electrode 34 and a second mounting electrode 36 provided on the back surface 14b. The first bonding electrode 30 is electrically connected to the first mounting electrode 34 inside the package substrate 14. The second bonding electrode 32 is electrically connected to the second mounting electrode 36 inside the package substrate 14.

[0029] The semiconductor light-emitting element 12 is flip-chip bonded onto the package substrate 14. The semiconductor light-emitting element 12 is bonded to a first junction electrode 30 and a second junction electrode 32. The semiconductor light-emitting element 12 is bonded to the package substrate 14 via a first junction 38 and a second junction 40. The first junction 38 is provided between the anode electrode 24 (first pad electrode 24b) and the first junction electrode 30, and electrically connects the anode electrode 24 and the first junction electrode 30. The second junction 40 is provided between the cathode electrode 26 (second pad electrode 26b) and the second junction electrode 32, and electrically connects the cathode electrode 26 and the second junction electrode 32.

[0030] The first joint portion 38 and the second joint portion 40 are, for example, stud bumps. The first joint portion 38 and the second joint portion 40 are formed, for example, by melting the tip of a metal wire such as Au to form a ball and pressing it against the first bonding electrode 30 and the second bonding electrode 32. The first joint portion 38 and the second joint portion 40 formed on the first bonding electrode 30 and the second bonding electrode 32 are then bonded to the anode electrode 24 (first pad electrode 24b) and the cathode electrode 26 (second pad electrode 26b), respectively, by ultrasonic bonding, for example.

[0031] The sealing member 16 includes a base portion 42 and a lens portion 44. The base portion 42 is the portion that contacts the bonding surface 14a of the package substrate 14. The outer surface of the base portion 42 has a shape in which the inclination angle θ1 with respect to the bonding surface 14a decreases as it approaches the bonding surface 14a. The outer surface of the base portion 42 has a concave shape in the outward direction away from the semiconductor light-emitting element 12 and a convex shape in the inward direction toward the semiconductor light-emitting element 12. The outer circumference of the base portion 42 is rectangular, similar to the outer circumference of the bonding surface 14a.

[0032] The lens portion 44 is provided on the base portion 42. The lens portion 44 is the portion of the sealing member 16 that has the top portion 16b. The outer surface of the lens portion 44 has a shape in which the inclination angle θ2 with respect to the joining surface 14a decreases as it moves away from the joining surface 14a. The outer surface of the lens portion 44 has a shape in which the radius of curvature decreases as it moves away from the joining surface 14a. The outer surface of the lens portion 44 has a shape in which the radius of curvature decreases as it approaches the top portion 16b, with the radius of curvature being smallest at the top portion 16b.

[0033] The base portion 42 and the lens portion 44 are integrally molded, and there is no clear boundary such as an interface or joint surface between the base portion 42 and the lens portion 44. The boundary between the base portion 42 and the lens portion 44 can be defined, for example, by the point where the radius of curvature of the outer surface 16a of the sealing member 16 is maximum, or by the inflection point where the direction of the irregularities on the outer surface 16a of the sealing member 16 reverses.

[0034] The height h2 of the lens portion 44 is greater than the height h1 of the base portion 42. The height h2 of the lens portion 44 is, for example, 70% or more, 75% or more, or 80% or more of the total height ha of the sealing member 16, and for example, 95% or less, 90% or less, or 85% or less of the total height ha of the sealing member 16. The height h1 of the base portion 42 is, for example, 5% or more, 10% or more, or 15% or more of the total height ha of the sealing member 16, and for example, 30% or less, 25% or less, or 20% or less of the total height ha of the sealing member 16. The height h1 of the base portion 42 is, for example, less than the height hc of the semiconductor light-emitting element 12.

[0035] The radius of curvature R at the top 16b of the sealing member 16 is preferably smaller than the height ha of the sealing member 16. By reducing the radius of curvature R at the top 16b of the sealing member 16, the amount of ultraviolet light emitted to the outside of the sealing member 16 can be increased, and the light output of the semiconductor light-emitting device 10 can be improved. The radius of curvature R at the top 16b of the sealing member 16 is, for example, less than or equal to half the size of the side of the bonding surface 14a of the package substrate 14.

[0036] The radius of curvature R at the top 16b of the sealing member 16 is preferably larger than the size of the side of the upper surface 12a of the semiconductor light-emitting element 12. By increasing the radius of curvature R at the top 16b of the sealing member 16, the entire upper surface 12a of the semiconductor light-emitting element 12 can be properly covered.

[0037] The radius of curvature R at the top 16b of the sealing member 16 is, for example, 1 mm or more, 1.1 mm or more, or 1.2 mm or more, and for example, 1.75 mm or less, 1.6 mm or less, or 1.5 mm or less. By setting the radius of curvature R at the top 16b of the sealing member 16 within such a range, it is possible to achieve both improved optical output of the semiconductor light-emitting device 10 and suppression of crack formation in the sealing member 16.

[0038] Figure 3 is a flowchart showing the manufacturing method of a semiconductor light-emitting device 10 according to an embodiment. First, a semiconductor light-emitting element 12 is bonded to the bonding surface 14a of a package substrate 14 (S10). Next, a thermosetting resin is applied to cover the bonding surface 14a of the package substrate 14 and the semiconductor light-emitting element 12 (S12). Next, the package substrate 14 with the thermosetting resin applied is inverted so that the thermosetting resin is located on the vertically lower side of the package substrate 14 (S14). Next, the thermosetting resin is heated and cured in the orientation where the thermosetting resin is located on the vertically lower side of the package substrate 14 (S16). This completes the semiconductor light-emitting device 10.

[0039] Figure 4 is a schematic diagram showing the manufacturing process of the semiconductor light-emitting device 10, and shows the state after the step of applying the thermosetting resin in S12. As shown in Figure 4, the thermosetting resin 50 is applied to cover the semiconductor light-emitting element 12 and the package substrate 14. The thermosetting resin 50 is in liquid form. The viscosity of the thermosetting resin 50 is, for example, 0.1 Pa·s or more, 0.5 Pa·s or more, or 1 Pa·s or more, and for example, 100 Pa·s or less, 50 Pa·s or less, or 10 Pa·s or less.

[0040] The thermosetting resin 50 is located above the package substrate 14 in the vertical direction G. The thermosetting resin 50 forms a dome shape due to its own surface tension. The outer surface 50a of the thermosetting resin 50 has a shape in which the inclination angle θ3 with respect to the bonding surface 14a increases as it approaches, for example, the bonding surface 14a of the package substrate 14. Therefore, unlike the sealing member 16 shown in Figure 2, the thermosetting resin 50 does not have a fillet-shaped base. The contact angle θ3 of the thermosetting resin 50 is greater than the contact angle θ1 of the base 42 of the sealing member 16.

[0041] Figure 5 is a schematic diagram showing the manufacturing process of the semiconductor light-emitting device 10, and shows the state after the process of inverting the package substrate 14 in S14. As shown in Figure 5, the vertical direction of the package substrate 14 is inverted in the vertical direction G, and the thermosetting resin 60 is located on the lower side of the package substrate 14 in the vertical direction G.

[0042] In Figure 5, the shape of the thermosetting resin 50 before inversion is shown by a dashed line, and the shape of the thermosetting resin 60 after inversion is shown by a solid line. When the package substrate 14 is inverted, the applied thermosetting resin 60 sags due to gravity. Therefore, the outer surface 60a of the thermosetting resin 60 after inversion has a different shape from the outer surface 50a of the thermosetting resin 50 before inversion. Specifically, the height of the thermosetting resin 60 after inversion is greater than the height of the thermosetting resin 50 before inversion. Also, the radius of curvature of the top portion 60b of the thermosetting resin 60 after inversion is smaller than the radius of curvature of the top portion 50b of the thermosetting resin 50 before inversion. Furthermore, the thermosetting resin 60 after inversion has a smaller contact angle θ4 on the outer circumference of the package substrate 14 and has a fillet shape with less thickness. As a result, the thermosetting resin 60 after inversion has a shape including a base portion 62 and a lens portion 64, similar to the sealing member 16.

[0043] Subsequently, as shown in Figure 5, the package substrate 14 is placed in a heating furnace or the like in an inverted state, and the thermosetting resin 60 is heated in this inverted state. As a result, the thermosetting resin 60 is heated and cured while still in the inverted state, forming a sealing member 16 including the base portion 42 and the lens portion 44.

[0044] By heating the thermosetting resin 60 in an inverted state, it is possible to prevent the thermosetting resin 60 from flowing out of the package substrate 14 during heat curing. This is thought to be because the contact angle θ4 of the thermosetting resin 60 after inversion is smaller than the contact angle θ3 of the thermosetting resin 50 before inversion, and the fillet shape with a small contact angle θ4 can suppress the outflow of the thermosetting resin 60.

[0045] Figure 6 is a table showing the manufacturing conditions and characteristics of the semiconductor light-emitting device 10 according to the embodiment. Embodiments 1 to 4 show the case where the package substrate 14 is not inverted and the thermosetting resin 50 is positioned on the vertically upper side of the package substrate 14 during heating and curing. Embodiments 5 to 13 show the case where the package substrate 14 is inverted and the thermosetting resin 60 is positioned on the vertically lower side of the package substrate 14 during heating and curing. Each embodiment from 1 to 13 differs in the amount of thermosetting resin 50 applied to the semiconductor light-emitting element 12 and the package substrate 14.

[0046] As shown in Figure 6, when heated upwards, the thermosetting resin 50 could be cured when the resin amount was 6 mg or less (Examples 1-3), but when the resin amount was 8 mg or more (Example 4), the thermosetting resin 50 leaked out during the heating process and could not be cured. On the other hand, when heated downwards, the thermosetting resin 60 could be cured even when the resin amount was 8 mg or more (Examples 8-12). However, when the resin amount was 16 mg or more (Example 13), the thermosetting resin 60 leaked out during the heating process and could not be cured.

[0047] Figure 6 shows the height ha of the sealing member 16 and the radius of curvature R of the top 16b. As shown in Figure 6, the height ha of the sealing member 16 tends to increase and the radius of curvature R of the top 16b tends to decrease as the amount of resin increases. Also, with the same amount of resin, when the sealing member 16 is inverted during heating, the height ha of the sealing member 16 tends to increase and the radius of curvature R of the top 16b tends to decrease. Focusing on the ratio (ha / R) of the height ha of the sealing member 16 to the radius of curvature R of the top 16b, the ratio (ha / R) tends to increase when the sealing member is inverted during heating.

[0048] Figure 6 further shows the light output of the semiconductor light-emitting device 10 and the durability time of the sealing member 16. The light output of the semiconductor light-emitting device 10 is set to 1 when the sealing member 16 is not provided. The light output increases when the sealing member 16 is provided, and the light output tends to increase as the ratio (ha / R) increases. The durability time of the sealing member 16 is shown as the elapsed time from the start of continuous lighting of the semiconductor light-emitting device 10 until a crack is visible in the sealing member 16. The durability time of the sealing member 16 is set to 1 when the durability time of Example 1 is provided. The durability time of the sealing member 16 increases as the amount of resin increases, and tends to increase as the ratio (ha / R) increases.

[0049] Figure 7 is a graph showing the relationship between the ratio (ha / R) of the height ha and radius of curvature R of the sealing member 16 and the optical output. From Figure 7, it can be seen that the optical output improves as the ratio (ha / R) increases. However, when the ratio (ha / R) becomes 1 or greater, that is, when the radius of curvature R becomes smaller than the height ha of the sealing member 16, the magnitude of the optical output plateaus. Therefore, in order to improve the optical output of the semiconductor light-emitting device 10, it is preferable that the ratio (ha / R) is 1 or greater.

[0050] Figure 8 is a graph showing the relationship between the ratio (ha / R) of the height ha and radius of curvature R of the sealing member 16 and the durability of the sealing member 16. From Figure 8, it can be seen that the durability of the sealing member 16 improves as the ratio (ha / R) increases. However, when the ratio (ha / R) becomes 1 or greater, that is, when the radius of curvature R is smaller than the height ha of the sealing member 16, the durability tends not to increase as much. Therefore, in order to improve the reliability of the semiconductor light-emitting device 10, it is preferable that the ratio (ha / R) be 1 or greater.

[0051] The present invention has been described above based on embodiments. Those skilled in the art will understand that the present invention is not limited to the embodiments described above, that various design changes are possible, and that various modifications are possible, and that such modifications also fall within the scope of the present invention.

[0052] Several embodiments of the present invention will be described below.

[0053] A first aspect of the present invention is a semiconductor light-emitting device comprising: a package substrate having a bonding surface; a semiconductor light-emitting element bonded to the bonding surface; and a sealing member that seals the bonding surface and the semiconductor light-emitting element and is light-transmitting at the emission wavelength of the semiconductor light-emitting element, wherein the sealing member includes a base that contacts the bonding surface and a lens portion on the base, the outer surface of the base having a shape in which the angle of inclination with respect to the bonding surface decreases as it approaches the bonding surface, the outer surface of the lens portion having a shape in which the angle of inclination with respect to the bonding surface decreases as it moves away from the bonding surface, and the height of the lens portion is greater than the height of the base. According to the first aspect, by including a fillet-shaped base, peeling of the sealing member from the package substrate can be suppressed. Furthermore, by making the height of the lens portion greater than the height of the base, the proportion of the outer surface having a dome shape can be increased, and the light output can be improved.

[0054] A second aspect of the present invention is a semiconductor light-emitting device according to the first aspect, wherein the outer surface of the lens portion has a shape in which the radius of curvature decreases as it moves away from the bonding surface. According to the second aspect, the radius of curvature at the top of the lens portion can be reduced, and the light output can be improved.

[0055] A third aspect of the present invention is a semiconductor light-emitting device according to the first or second aspect, wherein the radius of curvature at the top of the sealing member is smaller than the height of the sealing member. According to the third aspect, by making the radius of curvature at the top of the sealing member smaller than the height of the sealing member, the light output can be improved and the durability time until cracks occur in the sealing member can be improved.

[0056] A fourth aspect of the present invention is a semiconductor light-emitting device according to any one of the first to third aspects, wherein the radius of curvature at the top of the sealing member is less than or equal to half the size of the side of the bonding surface. According to the fourth aspect, the radius of curvature at the top of the sealing member can be reduced, and the light output can be improved.

[0057] A fifth aspect of the present invention is a semiconductor light-emitting device according to any one of the first to fourth aspects, wherein the radius of curvature at the top of the sealing member is larger than the size of the side of the upper surface of the semiconductor light-emitting element. According to the fifth aspect, since the radius of curvature at the top of the sealing member is larger than the size of the side of the upper surface of the semiconductor light-emitting element, the entire upper surface of the semiconductor light-emitting element can be appropriately covered by the sealing member, thereby improving the reliability of the sealing.

[0058] A sixth aspect of the present invention is a semiconductor light-emitting device according to any one of the first to sixth aspects, wherein the height of the sealing member is twice or more the height of the semiconductor light-emitting element. According to the sixth aspect, by increasing the height of the sealing member, the entire semiconductor light-emitting element can be properly covered by the sealing member, and the durability time until cracks occur in the sealing member can be improved.

[0059] A seventh aspect of the present invention is a semiconductor light-emitting device according to any one of the first to seventh aspects, wherein the height from the top surface of the semiconductor light-emitting element to the top of the sealing member is greater than the size of the side of the top surface of the semiconductor light-emitting element. According to the seventh aspect, by increasing the height of the sealing member covering the upper side of the semiconductor light-emitting element, the entire semiconductor light-emitting element can be properly covered by the sealing member, and the durability time until cracks occur in the sealing member can be improved.

[0060] An eighth aspect of the present invention is a semiconductor light-emitting device according to any one of the first to seventh aspects, wherein the height of the base is smaller than the height of the semiconductor light-emitting element. According to the eighth aspect, the light emitted from the side of the semiconductor light-emitting element can be directed towards the dome-shaped lens portion, thereby improving the light output.

[0061] A ninth aspect of the present invention is a semiconductor light-emitting device according to any one of the first to eighth aspects, wherein the outer circumference of the bonding surface is rectangular and the outer circumference of the base is rectangular. According to the ninth aspect, by making the outer circumference shape of the sealing member correspond to the outer circumference shape of the bonding surface, peeling of the sealing member from the package substrate can be suppressed.

[0062] A tenth aspect of the present invention is a method for manufacturing a semiconductor light-emitting device according to any one of the first to ninth aspects, comprising the steps of: applying a liquid thermosetting resin so as to cover the bonding surface of the package substrate and the semiconductor light-emitting element bonded to the bonding surface; and heating and curing the liquid thermosetting resin in a orientation such that the liquid thermosetting resin is located vertically below the package substrate to form the sealing member. According to the tenth aspect, by heating the liquid thermosetting resin in a orientation such that the liquid thermosetting resin is located vertically below the package substrate, it is possible to suppress the outflow of resin during the heating process even when the amount of resin is increased. Furthermore, by heating and curing the liquid thermosetting resin while it is hanging down below the package substrate, it is possible to increase the height of the sealing member while decreasing the radius of curvature of the top of the sealing member, thereby improving the light output and the durability of the sealing member.

[0063] An eleventh aspect of the present invention is a method for manufacturing a semiconductor light-emitting device according to the tenth aspect, wherein the viscosity of the liquid thermosetting resin is 0.1 Pa·s or more and 100 Pa·s or less. According to the eleventh aspect, by appropriately setting the viscosity of the liquid thermosetting resin, the shape of the liquid thermosetting resin can be appropriately changed when it is hanging down below the package substrate, and the outflow of the resin during the heating process can be suppressed. [Explanation of symbols]

[0064] 10... Semiconductor light-emitting device, 12... Semiconductor light-emitting element, 14... Package substrate, 14a... Bonding surface, 16... Sealing member, 16a... Outer surface, 16b... Top, 42... Base, 44... Lens part, 50, 60... Thermosetting resin.

Claims

1. A package substrate having a bonding surface, A semiconductor light-emitting element bonded to the aforementioned bonding surface, The bonding surface and the semiconductor light-emitting element are sealed by a sealing member that is transparent in the emission wavelength of the semiconductor light-emitting element, The sealing member includes a base that contacts the joining surface and a lens portion on the base, The outer surface of the base has a shape in which the angle of inclination with respect to the joining surface decreases as it approaches the joining surface. The outer surface of the lens portion has a shape in which the angle of inclination with respect to the bonding surface decreases as it moves away from the bonding surface. The height of the lens portion is greater than the height of the base portion. Semiconductor light-emitting device.

2. The outer surface of the lens portion has a shape in which the radius of curvature decreases as it moves away from the bonding surface. The semiconductor light-emitting apparatus according to claim 1.

3. The radius of curvature at the top of the sealing member is smaller than the height of the sealing member. The semiconductor light-emitting apparatus according to claim 1.

4. The radius of curvature at the top of the sealing member is less than or equal to half the size of the side of the joining surface. The semiconductor light-emitting apparatus according to claim 1.

5. The radius of curvature at the top of the sealing member is greater than the size of the side of the upper surface of the semiconductor light-emitting element. The semiconductor light-emitting apparatus according to claim 1.

6. The height of the sealing member is at least twice the height of the semiconductor light-emitting element. A semiconductor light-emitting apparatus according to any one of claims 1 to 5.

7. The height from the top surface of the semiconductor light-emitting element to the top of the sealing member is greater than the size of the side of the top surface of the semiconductor light-emitting element. A semiconductor light-emitting apparatus according to any one of claims 1 to 5.

8. The height of the base is smaller than the height of the semiconductor light-emitting element. A semiconductor light-emitting apparatus according to any one of claims 1 to 5.

9. The outer circumference of the aforementioned joining surface is rectangular in shape. The outer circumference of the base is rectangular. A semiconductor light-emitting apparatus according to any one of claims 1 to 5.

10. A method for manufacturing a semiconductor light-emitting device according to claim 1, A step of applying a liquid thermosetting resin so as to cover the bonding surface of the package substrate and the semiconductor light-emitting element bonded to the bonding surface, The process includes the step of heating and curing the liquid thermosetting resin in an orientation such that the liquid thermosetting resin is located vertically below the package substrate, thereby forming the sealing member. A method for manufacturing a semiconductor light-emitting device.

11. The viscosity of the liquid thermosetting resin is 0.1 Pa·s or more and 100 Pa·s or less. A method for manufacturing a semiconductor light-emitting device according to claim 10.

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