Image sensor, electronic device including the same, and HDR image generation method

Abstract

The present invention provides an image sensor, an electronic device including the same, and a method for generating HDR images. [Solution] The image sensor includes a sensor substrate including a plurality of unit light sensing cells; and a nano-optical lens array including at least one nanostructure arranged to focus incident light onto the plurality of unit light sensing cells, wherein the unit light sensing cells include a central light sensing cell and a plurality of peripheral light sensing cells surrounding the central light sensing cell, and the nano-optical lens array includes a plurality of unit corresponding regions including at least one nanostructure corresponding to the plurality of unit light sensing cells, and the at least one nanostructure provided in the unit corresponding region may be arranged such that the phase profile of the incident light that has passed through the nano-optical lens array is focused onto the central light sensing cell and the plurality of peripheral light sensing cells.

Description

Technical Field

[0001] The present invention relates to an image sensor, an electronic device including the same, and a method for generating a HDR (High Dynamic Range) image.

Background Art

[0002] An image sensor usually senses the color of incident light using a color filter. By the way, since the color filter absorbs the light of the remaining colors except the light of the corresponding color, the light utilization efficiency may decrease. For example, when using an RGB color filter, only 1 / 3 of the incident light is transmitted and the remaining 2 / 3 is absorbed, so the light utilization efficiency is only about 33%. Therefore, in the case of a color display device or a color image sensor, most of the light loss occurs in the color filter.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The problem to be solved by the present invention is to provide an image sensor having improved light efficiency with a nano-optical lens array, an electronic device including the same, and a method for generating a HDR (High Dynamic Range) image using the same.

Means for Solving the Problems

[0004] An image sensor according to an exemplary embodiment may include: a sensor substrate including a plurality of unit light-sensing cells; and a nano-optical lens array including at least one nanostructure arranged to focus incident light onto the plurality of unit light-sensing cells, wherein the unit light-sensing cells include a central light-sensing cell and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell; the nano-optical lens array includes a plurality of unit-corresponding regions including at least one nanostructure corresponding to the plurality of unit light-sensing cells; the at least one nanostructure provided in the unit-corresponding region is arranged such that the phase profile of incident light passing through the nano-optical lens array is a phase profile that focuses light onto the central light-sensing cell and the plurality of peripheral light-sensing cells; and may be configured to acquire an HDR (High Dynamic Range) image using an image acquired from the central light-sensing cell and images acquired from the plurality of peripheral light-sensing cells.

[0005] Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, with the central light-sensing cell provided in the center of the 3x3 array and the peripheral light-sensing cells provided in the periphery of the 3x3 array.

[0006] At least one nanostructure provided in the unit corresponding region may be arranged such that the phase profile of incident light passing through the nano-optical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

[0007] The nano-optical lens array may include at least one nanostructure arranged to separate light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands from the incident light, and to focus them into the plurality of unit light-sensing cells, respectively.

[0008] The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell, and the nano-optical lens array includes a first unit corresponding region corresponding to the first unit light sensing cell, a second unit corresponding region corresponding to the second unit light sensing cell, a third unit corresponding region corresponding to the third unit light sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light sensing cell, and at least one nanostructure provided in the first unit corresponding region separates light in a first wavelength band from the incident light and focuses it on the first unit light sensing cell. The nanostructures may be arranged such that at least one nanostructure provided in the second unit corresponding region is arranged to separate light in the second wavelength band from the incident light and focus it on the second unit light sensing cell; at least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and focus it on the third unit light sensing cell; and at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and focus it on the fourth unit light sensing cell.

[0009] The at least one nanostructure provided in the first unit-corresponding region may be arranged symmetrically with respect to a first direction, the at least one nanostructure provided in the second unit-corresponding region may be arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction, and the at least one nanostructure provided in the fourth unit-corresponding region may be arranged symmetrically with respect to the second direction.

[0010] At least one nanostructure provided in the corresponding unit region may be arranged such that the phase profile of incident light passing through the nano-optical lens array has a phase profile in the form of a Bessel function.

[0011] Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, and the size of the unit corresponding region may be larger than the size of the light-sensing cell.

[0012] Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, and the size of the unit corresponding region is the same as the size of the light-sensing cell.

[0013] The sensor substrate and the nano-optical lens array may include a plurality of color filters provided between them in correspondence with the plurality of unit light sensing cells.

[0014] An exemplary electronic device includes a lens assembly that forms an optical image of a subject; an image sensor that converts the optical image formed by the lens assembly into an electrical signal; and a processor that processes the signal generated by the image sensor; wherein the image sensor includes a sensor substrate that includes a plurality of unit light-sensing cells; and a nano-optical lens array that includes at least one nanostructure arranged to focus incident light onto the plurality of unit light-sensing cells; wherein the unit light-sensing cells include a central light-sensing cell and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell; the nano-optical lens array includes a plurality of unit-corresponding regions corresponding to the plurality of unit light-sensing cells and including at least one nanostructure; the at least one nanostructure provided in the unit-corresponding region is arranged such that the phase profile of incident light passing through the nano-optical lens array is a phase profile that focuses onto the central light-sensing cell and the plurality of peripheral light-sensing cells; and the device may be configured to acquire an HDR (High Dynamic Range) image using the image acquired from the central light-sensing cell and the images acquired from the plurality of peripheral light-sensing cells.

[0015] Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, with the central light-sensing cell provided in the center of the 3x3 array and the peripheral light-sensing cells provided in the periphery of the 3x3 array.

[0016] At least one nanostructure provided in the unit corresponding region may be arranged such that the phase profile of incident light passing through the nano-optical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

[0017] The nano-optical lens array may include at least one nanostructure arranged to separate light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands from the incident light, and to focus them into the plurality of unit light-sensing cells, respectively.

[0018] The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell, and the nano-optical lens array includes a first unit corresponding region corresponding to the first unit light sensing cell, a second unit corresponding region corresponding to the second unit light sensing cell, a third unit corresponding region corresponding to the third unit light sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light sensing cell, and at least one nanostructure provided in the first unit corresponding region separates light in a first wavelength band from the incident light and focuses it on the first unit light sensing cell. The nanostructures may be arranged such that at least one nanostructure provided in the second unit corresponding region is arranged to separate light in the second wavelength band from the incident light and focus it on the second unit light sensing cell; at least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and focus it on the third unit light sensing cell; and at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and focus it on the fourth unit light sensing cell.

[0019] The at least one nanostructure provided in the first unit-corresponding region may be arranged symmetrically with respect to a first direction, the at least one nanostructure provided in the second unit-corresponding region may be arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction, and the at least one nanostructure provided in the fourth unit-corresponding region may be arranged symmetrically with respect to the second direction.

[0020] An electronic device in which at least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of incident light passing through the nano-optical lens array has a phase profile in the form of a Bessel function.

[0021] Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, and the size of the unit corresponding region may be larger than the size of the light-sensing cell.

[0022] Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, and the size of the unit corresponding region is the same as the size of the light-sensing cell.

[0023] An example embodiment of the HDR image generation method may include the steps of: acquiring a single-shot image from a central light-sensing cell of a plurality of unit light-sensing cells and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell; binning the single-shot images acquired from the peripheral light-sensing cells; performing HDR (High Dynamic Range) merging using the binned image and the image acquired from the central light-sensing cell; performing signal processing on the image acquired by performing the HDR merging; and outputting an HDR image.

[0024] Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, with the central light-sensing cell provided in the center of the 3x3 array and the peripheral light-sensing cells provided in the periphery of the 3x3 array. [Effects of the Invention]

[0025] An image sensor according to an exemplary embodiment and an electronic device including the same can improve the amount of light collected by a central light sensing cell and a peripheral light sensing cell by a phase profile formed by a nano-optical lens array.

[0026] The image sensor according to an exemplary embodiment can dynamically utilize pixels in a low illuminance environment and a high illuminance environment, and can be applied to, for example, an HDR (High Dynamic Range) sensor.

Brief Description of the Drawings

[0027] [Figure 1] It is a schematic block diagram of an image sensor according to an embodiment. [Figure 2] It is a plan view exemplarily showing a pixel arrangement of a pixel array of an image sensor according to an embodiment. [Figure 3A] It is a cross-sectional view of a pixel array of an image sensor according to an embodiment taken along line A-A' of FIG. 2. [Figure 3B] It is a cross-sectional view of a pixel array of an image sensor according to an embodiment taken along line B-B' of FIG. 2. [Figure 4] It is a plan view showing an arrangement of a plurality of light sensing cells of a sensor substrate provided in a pixel array of an image sensor according to an embodiment. [Figure 5] It is a plan view exemplarily showing an arrangement of a plurality of nanostructures of a nano-optical lens array according to an embodiment. [Figure 6] It is a plan view exemplarily showing a green light collection region formed by a nano-optical lens array of a pixel array of an image sensor according to an embodiment. [Figure 7] It is a plan view exemplarily showing a red light collection region formed by a nano-optical lens array of a pixel array of an image sensor according to an embodiment. [Figure 8] It is a plan view exemplarily showing a blue light collection region formed by a nano-optical lens array of a pixel array of an image sensor according to an embodiment. [Figure 9]Figure 5 is a diagram showing the target phase profile of the nano-optical lens array. [Figure 10] This is a plan view showing the color filter layer of the pixel array of an image sensor according to an exemplary embodiment. [Figure 11A] This is a cross-sectional view of the pixel array of an image sensor according to another exemplary embodiment, viewed along the line A-A' in Figure 2. [Figure 11B] This is a cross-sectional view of the pixel array of an image sensor according to another exemplary embodiment, viewed along the line B-B' in Figure 2. [Figure 12] Figures 11A and 11B show the target phase profile of the nano-optical lens array of the pixel array and the signal intensity at the unit light-sensing cell. [Figure 13] This is a plan view illustrating the pixel arrangement of a pixel array of an image sensor according to another exemplary embodiment. [Figure 14] This is a plan view illustrating the pixel arrangement of a pixel array of an image sensor according to another exemplary embodiment. [Figure 15] This graph shows the color separation performance of the image sensor according to the embodiment in comparison with a comparative example. [Figure 16] This is a block diagram showing an HDR driving process for an image sensor according to an exemplary embodiment. [Figure 17] This is a schematic block diagram showing an electronic device including an image sensor according to an embodiment. [Figure 18] This is a schematic block diagram showing the camera module installed in the electronic device shown in Figure 17. [Figure 19] This is a block diagram of an electronic device including a multi-camera module. [Figure 20] Figure 19 is a detailed block diagram of one camera module installed in the electronic device. [Modes for carrying out the invention]

[0028] The embodiments will be described in detail below with reference to the attached drawings. The embodiments described are merely illustrative examples, and various modifications are possible from such embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation.

[0029] In the following, the terms "top" and "above" include not only those directly above the object being touched, but also those above the object without direct contact.

[0030] Terms such as "first," "second," etc., may be used to describe various components, but are used solely to distinguish one component from others. Such terms do not imply that the components differ in material or structure.

[0031] A singular expression includes multiple expressions unless the context clearly indicates otherwise. Furthermore, when a part "includes" a component, this means it includes other components, not excludes them, unless otherwise stated.

[0032] Furthermore, terms such as "part" and "module" as used in the specification refer to a unit that processes at least one function or operation, which may be embodied by hardware or software, or by a combination of hardware and software.

[0033] The use of the term "the aforementioned" and similar demonstrative terms can apply to both singular and plural nouns.

[0034] The steps constituting the method may be performed in any order unless explicitly stated otherwise. Furthermore, the use of all illustrative terms (e.g., etc.) is solely for the purpose of detailing the technical idea and, unless limited by the claims, does not limit the scope of the rights.

[0035] Figure 1 is a schematic block diagram of an image sensor according to one embodiment. Referring to Figure 1, the image sensor 1000 may include a pixel array 1100, a timing controller 1010, a row decoder 1020, and an output circuit 1030. It may be a CCD (charge coupled device) image sensor or a CMOS (complementary metal oxide semiconductor) image sensor.

[0036] The pixel array 1100 includes pixels arranged in a two-dimensional array along multiple rows and columns. The row decoder 1020 selects one row of the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a light-sensing signal from multiple pixels arranged along the selected row, on a column-by-column basis. For this purpose, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include multiple ADCs positioned column by column between the column decoder and the pixel array 1100, or a single ADC positioned at the output terminal of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as a single chip or as separate chips. A processor for processing the video signal output through the output circuit 1030 may be implemented as a single chip together with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0037] The pixel array 1100 may include multiple pixels that sense light of different wavelengths. The arrangement of pixels can be implemented in a variety of ways.

[0038] The pixel array 1100 may include multiple pixels that sense light of different wavelengths. The pixel arrangement can be implemented in various ways. For example, Figure 2 illustrates the pixel arrangement of the pixel array 1100 of an image sensor 1000 according to one embodiment. Referring to Figure 2, the pixel array 1100 includes multiple two-dimensionally arranged unit pixel structures, and the multiple unit pixels as a whole also have a structure in which a first green pixel G1, a red pixel R, a blue pixel B, and a second green pixel G2 are arranged in a 2x2 array.

[0039] Each of the first green pixel G1, red pixel R, blue pixel B, and second green pixel G2 may include multiple pixels arranged in a 3x3 array. Each of the first green pixel G1, red pixel R, blue pixel B, and second green pixel G2 may include a central pixel located at its center and multiple peripheral pixels surrounding the aforementioned central pixel. For example, as shown in Figure 2, a first green central pixel G1a may be located at the center of the first green pixel G1, and multiple first green peripheral pixels G1b may be located around the first green central pixel G1a. The first green central pixel G1a may be located in the 2nd row and 2nd column of the first green pixel G1, and the multiple first green peripheral pixels G1b may be located in the 1st row and 1st column, 1st row and 2nd column, 1st row and 3rd column, 2nd row and 1st column, 2nd row and 3rd column, 3rd row and 1st column, 3rd row and 2nd column, and 3rd row and 3rd column. In other words, the first green pixel G1 may include one first green central pixel G1a located at its center and eight first green peripheral pixels G1b surrounding the aforementioned first green central pixel G1a.

[0040] Similarly, a central red pixel Ra may be provided at the center of a red pixel R, with multiple peripheral red pixels Rb surrounding the central red pixel Ra; a central blue pixel Ba may be provided at the center of a blue pixel B, with multiple peripheral blue pixels Bb surrounding the central blue pixel Ba; a central second green pixel G2a may be provided at the center of a second green pixel G2, with multiple peripheral second green pixels G2b surrounding the central second green pixel G2a.

[0041] An image sensor 1000 including a pixel array 1100 having such a pixel arrangement is, for example, an HDR (High Dynamic Range) image sensor. In this case, in a low-light environment, the image is generated mainly using the signal output from the central pixel, and in a high-light environment, the image can be generated using both the signal output from the central pixel and the peripheral pixel. Therefore, the contrast ratio of the image can be greatly improved by using the central pixel, which has relatively high sensitivity, and the peripheral pixel, which has relatively low sensitivity.

[0042] Figure 3A is a cross-sectional view of the pixel array of the image sensor according to the embodiment, viewed along the line A-A' in Figure 2, and Figure 3B is a cross-sectional view of the pixel array of the image sensor according to the embodiment, viewed along the line B-B' in Figure 2.

[0043] Referring to Figures 3A and 3B, the pixel array 1100 includes a sensor substrate 110 and a nano-optical lens array 130 disposed on the sensor substrate 110. A spacer layer 120 may be placed between the sensor substrate 110 and the nano-optical lens array 130. A color filter layer 140 may also be placed between the sensor substrate 110 and the spacer layer 120. The color filter layer 140 may be omitted.

[0044] The sensor substrate 110 may include a plurality of unit light sensing cells that convert incident light into electrical signals to generate an image signal. For example, the sensor substrate 110 may include a first unit light sensing cell 111 and a fourth unit light sensing cell 114 that sense light in a first wavelength band and convert it into an electrical signal, a second unit light sensing cell 112 that senses light in a second wavelength band and converts it into an electrical signal, and a third unit light sensing cell 113 that senses light in a third wavelength band and converts it into an electrical signal.

[0045] The spacer layer 120 is placed between the sensor substrate 110 and the nano-optical lens array 130 and plays a role in maintaining a constant distance between the sensor substrate 110 and the nano-optical lens array 130. The spacer layer 120 can be made of a dielectric material that is transparent to visible light, such as PMMA (poly methyl methacrylate), silanolic glass (SOG; siloxane-based spin on glass), SiO2, Si3N4, Al2O3, etc., which has a lower refractive index than the nanostructure NP described later and has low absorption in the visible light band.

[0046] The color filter layer 140 may include a plurality of color filters that transmit light in a specific wavelength band and absorb light in other wavelength bands. For example, the color filter layer 140 may include a green color filter GF that transmits light in a first wavelength band and absorbs light in other wavelength bands, a red color filter RF that transmits light in a second wavelength band and absorbs light in other wavelength bands, and a blue color filter BF that transmits light in a third wavelength band and absorbs light in other wavelength bands.

[0047] The green color filter GF may be placed on the first unit light-sensing cell 111 and the fourth unit light-sensing cell 114, the red color filter RF may be placed on the second unit light-sensing cell 112, and the blue color filter BF may be placed on the third unit light-sensing cell 113. Because the incident light is considerably color-separated by the nano-optical lens array 130, the absorption loss by the color filter layer 140 is low even when the color filter layer 140 is used. Furthermore, the color purity can be improved by using both the nano-optical lens array 130 and the color filter layer 140.

[0048] The nano-optical lens array 130 includes a plurality of nanostructures NP, and may further include a dielectric layer DL filled between the plurality of nanostructures NP. The plurality of nanostructures NP in the nano-optical lens array 130 can be configured in various ways in order for the nano-optical lens array 130 to perform the aforementioned color separation and light focusing functions. For example, the plurality of nanostructures NP may be arranged such that the phase of the transmitted light passing through the nano-optical lens array 130 varies depending on their position on the nano-optical lens array 130. The phase profile of the transmitted light embodied by the nano-optical lens array 130 can be determined by the cross-sectional size (e.g., width or diameter), cross-sectional shape, and height of each nanostructure NP, as well as the arrangement period (or pitch) and arrangement configuration of the plurality of nanostructures NP. Furthermore, the behavior of the light transmitted through the nano-optical lens array 130 can be determined by the phase profile of the transmitted light.

[0049] Nanostructures NP can have a size smaller than the wavelength of visible light. For example, nanostructures NP can have a size smaller than the blue wavelength. For example, the cross-sectional width (or diameter) of a nanostructure NP can be smaller than 400 nm, 300 nm, or 200 nm, and larger than about 80 nm. The height of a nanostructure NP can be greater than the cross-sectional width, ranging from about 500 nm to about 1500 nm.

[0050] Nanostructures NP can consist of materials that have a relatively high refractive index compared to the surrounding material and relatively low absorption in the visible light band. For example, nanostructures NP may include c-Si, p-Si, a-Si, and III-V compound semiconductors (GaP, GaN, GaAs, etc.), SiC, TiO2, SiN3, ZnS, ZnSe, Si3N4, and / or combinations thereof. The area around the nanostructure NP may be filled with a dielectric layer DL that has a relatively lower refractive index than the nanostructure NP and relatively low absorption in the visible light band. For example, the dielectric layer DL may be filled with PMMA, silanol-based glass (SOG), SiO2, Si3N4, Al2O3, air, etc.

[0051] The refractive index of the nanostructure NP is approximately 2.0 or higher for light with a wavelength of approximately 630 nm, while the refractive index of the dielectric layer DL is approximately 1.0 or higher but less than 2.0 for light with a wavelength of approximately 630 nm. Furthermore, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric layer DL is approximately 0.5 or higher. Nanostructure NP, which has a refractive index difference with the surrounding material, can change the phase of light passing through it. This is due to a phase delay caused by the sub-wavelength shape and dimensions of the nanostructure NP, and the degree of phase delay is determined by the detailed shape and dimensions, arrangement, etc., of the nanostructure NP.

[0052] The nanostructure NP may include multilayer nanostructures NP1 and NP2. The nanostructure NP may include at least one of the first layer nanostructure NP1 and the second layer nanostructure NP2. The first layer nanostructure NP1 may be provided on the spacer layer 120, and the second layer nanostructure NP2 may be provided on the first layer nanostructure NP1. The arrangement of the first layer nanostructure NP1 and the arrangement of the second layer nanostructure NP2 may be identical to each other. Alternatively, the arrangement of the first layer nanostructure NP1 and the arrangement of the second layer nanostructure NP2 may be different to each other.

[0053] Depending on the arrangement of the nanostructures NP, the form of color separation and light focusing performed by the nano-optical lens array 130 may differ depending on the color of the photosensitive cell of the sensor substrate 110 that the nano-optical lens array 130 faces.

[0054] Although not shown in the figures, an etching stop layer may be placed between the spacer layer 120 and the nano-optical lens array 130. Such an etching stop layer may be provided in the manufacturing process of the nano-optical lens array 130 to protect the spacer layer 120, which is the underlying structure of the nano-optical lens array 130. When manufacturing the nano-optical lens array 130 on the spacer layer 120, a dielectric layer DL is formed as a whole on the spacer layer 120 and then etched to a predetermined depth. In this case, if the spacer layer 120 is damaged by etching beyond the desired depth, and the thickness of the spacer layer 120 no longer conforms to the distance requirement between the nano-optical lens array 130 and the sensor substrate 110, the color separation performance may deteriorate. The etching stop layer consists of a material with a lower etching selectivity ratio than the material layer being etched, and is not completely removed during the etching process, thus preventing damage to the spacer layer 120 from the etching process. The etching stop layer may contain HfO2. The thickness of the etching stop layer is determined considering the etching depth, i.e., the height of the nanostructure NP, and may also be determined considering the etching dispersion within the process wafer. The thickness of the etching stop layer can be approximately 3 nm to 30 nm. Furthermore, if the nanostructure NP has a multilayer structure, the etching stop layer may be placed between the nanostructure layers.

[0055] Although not shown in the diagram, a protective layer may be further placed on the nano-optical lens array 130 to protect it. The protective layer may consist of a material that acts as an anti-reflective layer. The anti-reflective layer can improve the light utilization efficiency of the pixel array 1100 by reducing the amount of incident light reflected from the upper surface of the nano-optical lens array 130. In other words, the anti-reflective layer prevents light incident on the pixel array 1100 from being reflected from the upper surface of the nano-optical lens array 130, allowing it to pass through the nano-optical lens array 130 and be detected by the sensor substrate 110. The anti-reflective layer may also be a structure in which one or more layers are stacked, for example, consisting of one layer made of a material different from the material making up the nano-optical lens array 130, or consisting of multiple material layers with different refractive indices.

[0056] Figure 4 is a plan view showing the arrangement of multiple light-sensing cells on a sensor substrate provided in the pixel array of an image sensor according to an exemplary embodiment.

[0057] Referring to Figure 4, the sensor substrate 110 may include multiple light-sensing cells that detect incident light.

[0058] The sensor substrate 110 includes a plurality of unit structures arranged in two dimensions along a first direction (X direction) and a second direction (Y direction), and each unit structure may include a first unit light-sensing cell 111, a second unit light-sensing cell 112, a third unit light-sensing cell 113, and a fourth unit light-sensing cell 114 arranged in a 2x2 array. Furthermore, each unit structure may include central light-sensing cells 111a, 112a, 113a, 114a and peripheral light-sensing cells 111b, 112b, 113b, 114b arranged in a 3x3 array.

[0059] An HDR image can be obtained using images acquired from the central light-sensing cells 111a, 112a, 113a, and 114a, and images acquired from the plurality of peripheral light-sensing cells 111b, 112b, 113b, and 114b.

[0060] Referring to Figure 4 based on Figure 2, the first unit light-sensing cell 111 may be provided corresponding to the first green pixel G1, the second unit light-sensing cell 112 may be provided corresponding to the red pixel R, the third unit light-sensing cell 113 may be provided corresponding to the blue pixel B, and the fourth unit light-sensing cell 114 may be provided corresponding to the second green pixel G2. The central light-sensing cell 111a of the first unit light-sensing cell 111 may be provided corresponding to the first green central pixel G1a, and the peripheral light-sensing cell 111b may be provided corresponding to the first green peripheral pixel G1b. The central light-sensing cell 112a of the second unit light-sensing cell 112 may be provided corresponding to the red central pixel Ra, and the peripheral light-sensing cell 112b may be provided corresponding to the red peripheral pixel Rb. The central light-sensing cell 113a of the third unit light-sensing cell 113 may be provided corresponding to the blue central pixel Ba, and the peripheral light-sensing cell 113b may be provided corresponding to the blue peripheral pixel Bb. The central light-sensing cell 114a of the fourth unit light-sensing cell 114 is provided in correspondence with the second green central pixel G2a, and the peripheral light-sensing cell 114b may be provided in correspondence with the second green peripheral pixel G2b.

[0061] Figure 5 is a plan view showing the regional divisions of a nano-optical lens array provided in the pixel array of an image sensor according to an exemplary embodiment.

[0062] Referring to Figure 5, the nano-optical lens array 130 can be configured to color-separate and focus incident light. For example, the nano-optical lens array 130 can separate light in a first wavelength band (e.g., green light), light in a second wavelength band different from the first wavelength band (e.g., red light), and light in a third wavelength band different from the first and second wavelength bands (e.g., blue light) from the incident light and direct them along different paths. The nano-optical lens array 130 can also be configured to act as a lens that focuses the separated light in the first wavelength band, the second wavelength band, and the third wavelength band onto the corresponding photosensing cells.

[0063] Referring to Figure 5 based on Figure 4, the nano-optical lens array 130 may include multiple unit corresponding regions, each corresponding to a plurality of unit light-sensing cells of the sensor substrate 110. For example, the nano-optical lens array 130 may include multiple first unit corresponding regions 131 corresponding to the first unit light-sensing cell 111, second unit corresponding regions 132 corresponding to the second unit light-sensing cell 112, third unit corresponding region 133 corresponding to the third unit light-sensing cell 113, and fourth unit corresponding region 134 corresponding to the fourth unit light-sensing cell 114. The size (or area) of each unit corresponding region 131, 132, 133, 134 of the nano-optical lens array 130 is larger than the size (or area) of each light-sensing cell.

[0064] A cluster of first unit corresponding regions 131, second unit corresponding regions 132, third unit corresponding regions 133, and fourth unit corresponding regions 134 can form a single unit structure. The first unit corresponding regions 131, second unit corresponding regions 132, third unit corresponding regions 133, and fourth unit corresponding regions 134 can be arranged to face their respective first unit photosensitive cells 111, second unit photosensitive cells 112, third unit photosensitive cells 113, and fourth unit photosensitive cells 114 along a third direction (Z direction) perpendicular to the first and second directions.

[0065] The first unit corresponding region 131, the second unit corresponding region 132, the third unit corresponding region 133, and the fourth unit corresponding region 134, which constitute the nano-optical lens array 130, can be configured to separate light in the first wavelength band from the incident light and focus it on the central light-sensing cell 111a and peripheral light-sensing cell 111b of the first unit light-sensing cell 111 and the central light-sensing cell 114a and peripheral light-sensing cell 114b of the fourth unit light-sensing cell 114, respectively; separate light in the second wavelength band and focus it on the central light-sensing cell 112a and peripheral light-sensing cell 112b of the second unit light-sensing cell 112; and separate light in the third wavelength band and focus it on the central light-sensing cell 113a and peripheral light-sensing cell 113b of the third unit light-sensing cell 113.

[0066] For this purpose, the nano-optical lens array 130 may include a plurality of nanostructures arranged according to a predetermined rule. The plurality of nanostructures may be divided and arranged in a first unit corresponding region 131, a second unit corresponding region 132, a third unit corresponding region 133, and a fourth unit corresponding region 134 that constitute the nano-optical lens array 130. Each of the first unit corresponding region 131, the second unit corresponding region 132, the third unit corresponding region 133, and the fourth unit corresponding region 134 may contain at least one nanostructure NP.

[0067] The number of nanostructures NP located within the first unit-corresponding region 131 and the fourth unit-corresponding region 134 is greater than the number of nanostructures NP located within the third unit-corresponding region 133. The number of nanostructures NP located within the second unit-corresponding region 132 is greater than the number of nanostructures NP located within the first unit-corresponding region 131 and the fourth unit-corresponding region 134. However, this is illustrative and not limited to such examples.

[0068] At least one nanostructure NP array located in the first unit corresponding region 131 has symmetry with the first direction (X direction) as its axis of symmetry, and at least one nanostructure NP array located in the fourth unit corresponding region 134 may have one-fold symmetry with the second direction (Y direction) as its axis of symmetry. As shown in Figure 5, the at least one nanostructure NP array located in the first unit corresponding region 131 and the at least one nanostructure NP array located in the fourth unit corresponding region 134 are also 90° rotationally symmetric to each other, but are not limited to this.

[0069] At least one nanostructure NP array located in the second unit corresponding region 132 may have two-fold symmetry with the first direction (X direction) and the second direction (Y direction) as axes of symmetry.

[0070] The nano-optical lens array 130 can form green light focusing regions, red light focusing regions, and blue light focusing regions. Furthermore, incident light transmitted through the nano-optical lens array 130 can form phase profiles that are focused on the central light-sensing cell and the peripheral light-sensing cell, respectively. Below, various examples of the focusing regions formed by the nanostructure NP arrangement of the nano-optical lens array 130 as described above will be explained.

[0071] Figure 6 is a plan view showing the green light focusing region formed by the nano-optical lens array of the pixel array of an image sensor according to an exemplary embodiment.

[0072] Referring to Figure 6 based on Figure 4, the nano-optical lens array 130 may include a first green light focusing region GL1 and a second green light focusing region GL2. The first green light focusing region GL1 may focus light in a first wavelength band from the incident light onto a first unit light-sensing cell 111 corresponding to a first corresponding region 131, and the second green light focusing region GL2 may focus light in a first wavelength band from the incident light onto a fourth unit light-sensing cell 114 corresponding to a fourth corresponding region 134. The area of ​​the first green light focusing region GL1 may be larger than the area of ​​the first unit light-sensing cell 111, and the area of ​​the second green light focusing region GL2 may be larger than the area of ​​the second unit light-sensing cell 112.

[0073] Figure 7 is a plan view showing the red light focusing region formed by the nano-optical lens array of the pixel array of an image sensor according to an exemplary embodiment.

[0074] Referring to Figure 7 based on Figure 4, the nano-optical lens array 130 may include a red light focusing region RL. The red light focusing region RL can focus light in the second wavelength band of the incident light onto the second corresponding region 132 and the second unit light-sensing cell 112. The area of ​​the red light focusing region RL may be larger than the area of ​​the second unit light-sensing cell 112.

[0075] Figure 8 is a plan view showing the blue light focusing region formed by the nano-optical lens array of the pixel array of an image sensor according to an exemplary embodiment.

[0076] Referring to Figure 8 based on Figure 4, the nano-optical lens array 130 may include a blue light focusing region BL. The blue light focusing region BL can focus light in the third wavelength band of the incident light onto the third corresponding region 133 and the third unit light-sensing cell 113. The area of ​​the blue light focusing region BL is larger than the area of ​​the third unit light-sensing cell 113.

[0077] Figure 9 is a diagram showing the target phase profile of the nano-optical lens array shown in Figure 5. Here, the focal length is set to 4 μm and the pitch of the photosensitive cells is set to 0.64 μm. Refer to Figure 5 for further explanation.

[0078] Referring to Figure 9(a) based on Figure 5, the nano-optical lens array 130 can form a phase profile in which green light is color-separated and focused into the central light-sensing cell 111a and peripheral light-sensing cell 111b of the first unit light-sensing cell 111 and the central light-sensing cell 114a and peripheral light-sensing cell 114b of the fourth unit light-sensing cell 114. Green light transmitted through the nano-optical lens array 130 has a phase delay peak value of 2π at the center of the central corresponding region 131a corresponding to the central light-sensing cell 111a within the first unit corresponding region 131, with the phase delay value decreasing as the distance from the center increases. It also has a phase delay peak value of 2π at the center of each peripheral corresponding region 131b corresponding to the peripheral light-sensing cell 111b, with the phase delay value decreasing as the distance from the center increases.

[0079] Similarly, the green light transmitted through the nano-optical lens array 130 has a phase profile in the fourth unit corresponding region 134 that has a phase delay peak value of 2π at the center of the central corresponding region 134a corresponding to the central light sensing cell 114a, with the phase delay value decreasing as it moves away from the center, and also has a phase delay peak value of 2π at the center of each peripheral corresponding region 134b corresponding to the peripheral light sensing cell 114b, with the phase delay value decreasing as it moves away from the center.

[0080] Furthermore, referring to Figure 9(b), the nano-optical lens array 130 can form a phase profile in which red light is color-separated and focused into the central light-sensing cell 112a and peripheral light-sensing cells 112b of the second unit light-sensing cell 112. The red light transmitted through the nano-optical lens array 130 has a phase delay peak value of 2π at the center of the central corresponding region 132a corresponding to the central light-sensing cell 112a within the second corresponding region 132, with the phase delay value decreasing as it moves away from the center. It also has a phase delay peak value of 2π at the center of each peripheral corresponding region 132b corresponding to the peripheral light-sensing cell 112b, with the phase delay value decreasing as it moves away from the center.

[0081] Furthermore, referring to Figure 9(c), the nano-optical lens array 130 can form a phase profile in which blue light is focused on the central light-sensing cell 113a and peripheral light-sensing cells 113b of the third unit light-sensing cell 113. The blue light transmitted through the nano-optical lens array 130 has a phase delay peak value of 2π at the center of the central corresponding region 133a corresponding to the central light-sensing cell 113a within the third unit corresponding region 133, with the phase delay value decreasing as it moves away from the center. It also has a phase delay peak value of 2π at the center of each peripheral corresponding region 133b corresponding to the peripheral light-sensing cell 113b, with the phase delay value decreasing as it moves away from the center.

[0082] Figure 10 is a plan view showing the color filter layer of the pixel array of an image sensor according to an exemplary embodiment.

[0083] Referring to Figure 10, the color filter layer 140 may include multiple color filters that transmit light in a specific wavelength band and absorb light in other wavelength bands. For example, the color filter layer 140 may include a green color filter GF that transmits light in a first wavelength band and absorbs light in other wavelength bands, a red color filter RF that transmits light in a second wavelength band and absorbs light in other wavelength bands, and a blue color filter BF that transmits light in a third wavelength band and absorbs light in other wavelength bands.

[0084] Referring to Figure 4, the green color filter GF may be placed on the first unit light-sensing cell 111 and the fourth unit light-sensing cell 114, the red color filter RF on the second unit light-sensing cell 112, and the blue color filter BF on the third unit light-sensing cell 113. Because the incident light is considerably color-separated by the nano-optical lens array 130, the absorption loss by the color filter layer 140 is low even when the color filter layer 140 is used. Furthermore, the color purity may be improved by using both the nano-optical lens array 130 and the color filter layer 140. The color filter layer 140 may be omitted.

[0085] Figure 11A is a cross-sectional view of the pixel array of an image sensor according to another exemplary embodiment, viewed along the line A-A' in Figure 2, and Figure 11B is a cross-sectional view of the pixel array of an image sensor according to another exemplary embodiment, viewed along the line B-B' in Figure 2. The differences will be explained in detail based on Figure 3.

[0086] Referring to Figures 11A and 11B, and comparing them with Figure 3, the nano-optical lens array 130 may be configured to perform a light-gathering function rather than the aforementioned color separation function. For this purpose, the multiple nanostructures NP of the nano-optical lens array 130 can be configured in various ways. For example, the multiple nanostructures NP may be arranged so that the phase of the transmitted light passing through the nano-optical lens array 130 changes differently depending on their position on the nano-optical lens array 130. The phase profile of the transmitted light embodied by the nano-optical lens array 130 can be determined by the cross-sectional size (e.g., width or diameter), cross-sectional shape, and height of each nanostructure NP, as well as the arrangement period (or pitch) and arrangement configuration of the multiple nanostructures NP. Furthermore, the behavior of the light transmitted through the nano-optical lens array 130 can be determined by the phase profile of the transmitted light. The nano-optical lens array 130 may be configured so that incident light is focused into each unit light-sensing cell 111, 112, 113, and 114. In this case, the size (or area) of the unit corresponding region of the nano-optical lens array 130 is the same as the size of each light-sensing cell. Incident light transmitted through the nano-optical lens array 130 can be focused into the central light-sensing cell of each unit light-sensing cell 111, 112, 113, 114 and into a plurality of peripheral light-sensing cells surrounding the aforementioned central light-sensing cell.

[0087] Figure 12 is a diagram showing the target phase profile of the nano-optical lens array and the signal intensity at the unit light-sensing cell for the pixel arrays of Figures 11A and 11B.

[0088] Referring to Figure 12, the nano-optical lens array 130 that performs the light-gathering function may be configured to form a Bessel function-like phase profile.

[0089] Figure 12(a) is a diagram showing that the nano-optical lens array 130 forms a phase profile in the form of a zero-order Bessel function, Figure 12(b) is a diagram showing the signal intensity at a unit light-sensing cell due to the phase profile of Figure 12(a), and Figure 12(c) is a diagram of the phase profile of Figure 12(a) viewed from a cross-section of the nano-optical lens array 130 in one direction (e.g., the first direction (X direction)).

[0090] Referring to Figures 12(a), (b), and (c), when the nano-optical lens array 130 forms a phase profile in the form of a zero-order Bessel function, the incident light is focused not only on the central light-sensing cell within the unit light-sensing cell but also on the peripheral light-sensing cells, and the signal intensity in the unit light-sensing cell takes on the form of a Bessel function.

[0091] Furthermore, Figure 12(d) is a diagram showing that the nano-optical lens array 130 forms a phase profile in the form of a first-order Bessel function, and Figure 12(e) is a diagram showing the signal intensity in the unit light-sensing cell due to the phase profile in Figure 12(d). Referring to Figures 12(d) and (e), when the nano-optical lens array 130 forms a phase profile in the form of a first-order Bessel function, the incident light is focused on the central light-sensing cell within the unit light-sensing cell, and is also uniformly focused on the peripheral light-sensing cell 110b in a form with a larger radius than the form in which it is focused on the central light-sensing cell.

[0092] Figures 13 and 14 are plan views illustrating the pixel arrangement of an image sensor pixel array according to another exemplary embodiment. The differences will be explained in detail based on Figure 2.

[0093] Referring to Figure 13, the pixel array 1100a includes a plurality of two-dimensionally arranged unit pixel structures, and the plurality of unit pixels as a whole also have a structure in which green pixels G, red pixels R, blue pixels B, and infrared pixels IR are arranged in a 2x2 array.

[0094] Each of the green pixels G, red pixels R, blue pixels B, and infrared pixels IR may include multiple pixels arranged in a 3x3 array. Each of the green pixels G, red pixels R, blue pixels B, and infrared pixels IR may include a central pixel located at its center and multiple peripheral pixels surrounding the aforementioned central pixel.

[0095] For example, as shown in Figure 13, a central green pixel Ga may be provided at the center of a green pixel G, and multiple peripheral green pixels Gb may be provided surrounding the central green pixel Ga. Similarly, a central red pixel Ra may be provided at the center of a red pixel R, and multiple peripheral red pixels Rb may be provided surrounding the central red pixel Ra; a central blue pixel Ba may be provided at the center of a blue pixel B, and multiple peripheral blue pixels Bb may be provided surrounding the central blue pixel Ba; an infrared central pixel IRa may be provided at the center of an infrared pixel IR, and multiple peripheral infrared pixels IRb may be provided surrounding the central infrared pixel IRa.

[0096] Referring to Figure 14, the pixel array 1100b includes a plurality of two-dimensionally arranged unit pixel structures, and the plurality of unit pixels as a whole also have a structure in which a first yellow pixel Y1, a red pixel R, a blue pixel B, and a second yellow pixel Y2 are arranged in a 2x2 array.

[0097] Each of the first yellow pixel Y1, red pixel R, blue pixel B, and second yellow pixel Y2 may include multiple pixels arranged in a 3x3 array. Each of the first yellow pixel Y1, red pixel R, blue pixel B, and second yellow pixel Y2 may include a central pixel located at its center and multiple peripheral pixels surrounding the aforementioned central pixel.

[0098] For example, as shown in Figure 14, a first yellow central pixel Y1a may be provided at the center of the first yellow pixel Y1, and multiple first yellow peripheral pixels Y1b may be provided surrounding the first yellow central pixel Y1a. Similarly, a red central pixel Ra may be provided at the center of the red pixel R, and multiple red peripheral pixels Rb may be provided surrounding the red central pixel Ra, a blue central pixel Ba may be provided at the center of the blue pixel B, and multiple blue peripheral pixels Bb may be provided surrounding the blue central pixel Ba, a second yellow central pixel Y2a may be provided at the center of the second yellow pixel Y2, and multiple second yellow peripheral pixels Y2b may be provided surrounding the second yellow central pixel Y2a.

[0099] The information described with reference to Figures 2 through 12 can also be applied to the pixel array 1100a in Figure 13 and the pixel array 1100b in Figure 14.

[0100] Figure 15 is a graph showing the color separation performance of the image sensor according to the embodiment compared with that of the comparative example. In Figure 15, the solid line represents the QE (Quantum Efficiency) at the central light-sensing cell of the image sensor according to the embodiment (Embodiment 1), the dashed line represents the QE at the ambient light-sensing cell of the image sensor according to the embodiment (Embodiment 2), and the dotted line represents the QE at the light-sensing cell of the image sensor according to the comparative example (Comparative Example).

[0101] Referring to Figure 15, the image sensor 1000 including the nano-optical lens array 130 according to the embodiment shows a significant increase in QE of approximately 48% in the central light-sensing cell and an increase of approximately 5% in the peripheral light-sensing cell compared to the image sensor according to the comparative example. According to the embodiment, by applying the nano-optical lens array 130 that forms the aforementioned phase profile to the image sensor 1000, the amount of light focused on the central light-sensing cell is greatly increased, while still allowing light to be focused on the peripheral light-sensing cell.

[0102] In this way, by designing the phase profile using the nano-optical lens array 130, the amount of light incident on the central light-sensing cell and the peripheral light-sensing cell can be controlled, increasing the degree of freedom in tuning the dynamic range of the central light-sensing cell and the peripheral light-sensing cell.

[0103] Figure 16 is a block diagram showing the HDR driving process of an image sensor according to an exemplary embodiment.

[0104] Referring to Figure 16, signals are acquired in the central light-sensing cell of the image sensor and in the surrounding ambient light-sensing cells mentioned above to generate a single-shot image (S110). Subsequently, the images acquired by the ambient light-sensing cells are binned (S120), and HDR merging is performed using the images acquired through the aforementioned binning and the images acquired by the central light-sensing cell (S130). At this time, HDR merging weights may be applied to each image. Subsequently, image signal processing (e.g., demosaicing, AWB (Auto White Balance) correction, CCM (Color Correction Matrix), or gamma correction) is performed on the HDR-merged image (S140), and after completing the image signal processing, the HDR image is output (S150).

[0105] The image sensor 1000 according to this embodiment can be used in a camera module with modular lenses of various performance levels and can be utilized in a variety of electronic devices.

[0106] Figure 17 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000.

[0107] Referring to Figure 17, in network environment ED00, electronic device ED01 may communicate with other electronic device ED02 via a first network ED98 (such as a short-range wireless communication network), or with other electronic devices ED04 and / or server ED08 via a second network ED99 (such as a long-range wireless communication network). Electronic device ED01 may communicate with electronic device ED04 via server ED08. Electronic device ED01 may include a processor ED20, memory ED30, input device ED50, sound output device ED55, display device ED60, audio module ED70, sensor module ED76, interface ED77, haptic module ED79, camera module ED80, power management module ED88, battery ED89, communication module ED90, subscriber identification module ED96, and / or antenna module ED97. Some of these components (such as the display device ED60) may be omitted from electronic device ED01, or other components may be added. Some of these components can be realized by a single integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, light sensor, etc.) can be realized by being embedded in the display device ED60 (display, etc.).

[0108] The processor ED20 can perform various data processing or calculations by controlling one or more other components (hardware, software components, etc.) of the electronic devices ED01 connected to the processor ED20 through software (such as the program ED40). As part of the data processing or calculations, the processor ED20 may load instructions and / or data received from other components (such as the sensor module ED76 or the communication module ED90) into volatile memory ED32, process the instructions and / or data stored in volatile memory ED32, and store the resulting data in non-volatile memory ED34. The processor ED20 may include a main processor ED21 (such as a central processing unit or application processor) and auxiliary processors ED23 (such as a graphics processing unit, image signal processor, sensor hub processor, or communication processor) that can operate independently or together with it. The auxiliary processor ED23 may use less power than the main processor ED21 and perform specialized functions.

[0109] The auxiliary processor ED23 can control the functions and / or states of some components of the electronic device ED01 (such as the display device ED60, sensor module ED76, and communication module ED90) on behalf of the main processor ED21 when the main processor ED21 is inactive (sleep state), or together with the main processor ED21 when the main processor ED21 is active (application execution state). The auxiliary processor ED23 (such as an image signal processor or communication processor) may be implemented as part of other functionally related components (such as a camera module ED80 or communication module ED90).

[0110] Memory ED30 can store various data required by the components of the electronic device ED01 (such as the processor ED20 and the sensor module ED76). This data may include, for example, software (such as the program ED40) and input and / or output data for the instructions related thereto. Memory ED30 may also include volatile memory ED32 and / or non-volatile memory ED34.

[0111] Program ED40 is stored in memory ED30 and may include the operational system ED42, middleware ED44, and / or application ED46.

[0112] The input device ED50 may receive instructions and / or data used by components of the electronic device ED01 (such as the processor ED20) from outside the electronic device ED01 (such as a user). The input device ED50 may include a microphone, mouse, keyboard, and / or digital pen (such as a stylus pen).

[0113] The audio output device ED55 can output an audio signal to the outside of the electronic device ED01. The audio output device ED55 may include a speaker and / or a receiver. The speaker may be used for general purposes such as multimedia playback or recording and playback, and the receiver may be used to receive incoming telephone calls. The receiver may be coupled to part of the speaker or may be embodied as a separate, independent device.

[0114] The display device ED60 may provide information visually to the outside of the electronic device ED01. The display device ED60 may include a display, a hologram device, or a projector and a control circuit for controlling said device. The display device ED60 may include a touch circuitry configured to sense touches and / or a sensor circuitry (such as a pressure sensor) configured to measure the intensity of the force generated by the touch.

[0115] The audio module ED70 can convert sound into electrical signals, or vice versa. The audio module ED70 can acquire sound through the input device ED50, or output sound through the speakers and / or headphones of other electronic devices (such as electronic device ED02) directly or wirelessly connected to the sound output device ED55 and / or electronic device ED01.

[0116] Sensor module ED76 can sense the operating state of electronic device ED01 (power, temperature, etc.) or external environmental conditions (user status, etc.) and generate electrical signals and / or data values ​​corresponding to the sensed state. Sensor module ED76 may include gesture sensors, gyro sensors, barometric pressure sensors, magnetic sensors, acceleration sensors, grip sensors, proximity sensors, color sensors, IR (Infrared) sensors, biosensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0117] Interface ED77 may support one or more designated protocols used to connect electronic device ED01 directly or wirelessly with other electronic devices (such as electronic device ED02). Interface ED77 may include HDMI (High Definition Multimedia Interface) (registered trademark), USB (Universal Serial Bus) interface, SD card interface, and / or audio interface.

[0118] The ED78 connector may include a connector that allows electronic device ED01 to be physically connected to other electronic devices (such as electronic device ED02). The ED78 connector may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0119] The ED79 haptic module can convert electrical signals into mechanical stimuli (such as vibration or movement) or electrical stimuli that the user perceives through touch or kinesthetic sense. The ED79 haptic module may include a motor, a piezoelectric element, and / or an electrical stimulator.

[0120] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly containing one or more lenses, an image sensor 1000 as shown in Figure 1, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from a subject that is the subject of image capture.

[0121] The power management module ED88 can manage the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a Power Management Integrated Circuit (PMIC).

[0122] Battery ED89 can supply power to the components of the electronic device ED01. Battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0123] The communication module ED90 can establish direct (wired) communication channels and / or wireless communication channels between electronic device ED01 and other electronic devices (such as electronic devices ED02, ED04, and server ED08), and can support communication over the established communication channels. The communication module ED90 operates independently of processor ED20 (such as an application processor) and may include one or more communication processors that support direct and / or wireless communication. The communication module ED90 may include wireless communication modules ED92 (such as cellular communication modules, short-range wireless communication modules, and GNSS (Global Navigation Satellite System) communication modules) and / or wired communication modules ED94 (such as LAN (Local Area Network) communication modules and power line communication modules). The relevant communication modules among these may communicate with other electronic devices via a first network ED98 (short-range communication networks such as Bluetooth®, WiFi Direct, or IrDA (Infrared Data Association)) or a second network ED99 (long-range communication networks such as cellular networks, the Internet, or computer networks (LAN, WAN, etc.)). These diverse types of communication modules may be integrated into a single component (such as a single chip) or embodied as multiple separate components (multiple chips). The wireless communication module ED92 may verify and authenticate the electronic device ED01 within a communication network such as the first network ED98 and / or the second network ED99 using subscriber information (such as an International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module ED96.

[0124] The antenna module ED97 can transmit and / or receive signals and / or power to or from an external source (such as other electronic devices). The antenna may include an emitter consisting of a conductive pattern formed on a substrate (such as a PCB). The antenna module ED97 may include one or more antennas. If multiple antennas are included, the communication module ED90 may select an antenna from among the multiple antennas that is suitable for the communication scheme used in the communication network, such as the first network ED98 and / or the second network ED99. Signals and / or power may be transmitted and / or received between the communication module ED90 and other electronic devices via the selected antenna. Other components (such as an RFIC) may be included as part of the antenna module ED97 in addition to the antennas.

[0125] Some of the components can be interconnected via communication methods between peripheral devices (such as buses, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), and MIPI (Mobile Industry Processor Interface)) to exchange signals (commands, data, etc.).

[0126] Commands or data may be transmitted to or received between electronic device ED01 and external electronic device ED04 via server ED08 connected to the second network ED99. Other electronic devices ED02 and ED04 may be of the same or different type as electronic device ED01. All or part of the operations performed by electronic device ED01 may be performed by one or more of the other electronic devices ED02, ED04, and ED08. For example, when electronic device ED01 needs to perform a certain function or service, instead of performing the function or service itself, it may request one or more other electronic devices to perform part or all of that function or service. One or more other electronic devices that receive the request may perform the additional function or service related to the request and transmit the result of its execution to electronic device ED01. Cloud computing, distributed computing, and / or client-server computing technologies may be used for this purpose.

[0127] Figure 18 is a block diagram illustrating the camera module ED80 provided in the electronic device ED01 shown in Figure 17.

[0128] Referring to Figure 18, the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, memory 1150 (such as buffer memory), and / or an image signal processor 1160.

[0129] The lens assembly 1110 can collect light emitted from the subject being photographed. The camera module ED80 includes multiple lens assemblies 1110, in which case the camera module ED80 can also be a dual camera, a 360° camera, or a spherical camera. Some of the multiple lens assemblies 1110 may have the same lens attributes (angle of view, focal length, autofocus, F-number, optical zoom, etc.) or may have other lens attributes. The lens assembly 1110 may include wide-angle lenses or telephoto lenses.

[0130] The flash 1120 may emit light used to enhance light emitted or reflected from a subject. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light-emitting diodes (such as RGB (Red-Green-Blue) LEDs, White LEDs, Infrared LEDs, Ultraviolet LEDs, etc.) and / or a Xenon Lamp. The image sensor 1000 is also the image sensor described in Figure 1 and may acquire an image corresponding to a subject by converting light emitted or reflected from a subject and transmitted through the lens assembly 1110 into an electrical signal.

[0131] The image stabilizer 1140 may move one or more lenses or image sensors 1000 included in the lens assembly 1110 in a specific direction, or control the operating characteristics of the image sensors 1000 (such as adjusting the read-out timing), in response to the movement of the camera module ED80 or the electronic device ED01 containing it, so as to compensate for negative effects of the movement. The image stabilizer 1140 may sense the movement of the camera module ED80 or the electronic device ED01 using a gyro sensor (not shown) or an accelerometer (not shown) located inside or outside the camera module ED80. The image stabilizer 1140 may be implemented optically.

[0132] Memory 1150 can store some or all of the image data acquired through the image sensor 1000 for subsequent image processing. For example, if multiple images are acquired at high speed, the acquired original data (Bayer-patterned data, high-resolution data, etc.) can be stored in memory 1150 and used to transmit the original data of a selected image (user-selected, etc.) to the image signal processor 1160 after displaying only the low-resolution image. Memory 1150 may be integrated into the memory ED30 of the electronic device ED01 or consist of a separate memory that operates independently.

[0133] The image signal processor 1160 can acquire images using electrical signals output from the image sensor 1000. For example, the image signal processor 1160 can work in conjunction with the image sensor 1000 to directly perform some of the image processing shown in Figures 23 to 26. It can also request image data in a specific format from the image sensor 1000 depending on the required image data format.

[0134] Furthermore, the image signal processor 1160 can perform additional image processing on video acquired through the image sensor 1000 or video data stored in the memory 1150. Image processing may include depth map generation, 3D modeling, panorama generation, feature point extraction, image synthesis, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1160 can also perform control (such as exposure time control or readout timing control) on components included in the camera module ED80 (such as the image sensor 1000).

[0135] The video processed by the image signal processor 1160 can be stored again in memory 1150 for further processing, or it can be provided as an external component of the camera module ED80 (such as memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). The image signal processor 1160 can be integrated into processor ED20 or configured as a separate processor operating independently of processor ED20. If the image signal processor 1160 is configured as a separate processor from processor ED20, the image processed by the image signal processor 1160 can be displayed through display device ED60 after undergoing additional image processing by processor ED20.

[0136] Furthermore, the image signal processor 1160 can receive two output signals independently from adjacent light-sensing cells within each pixel or subpixel of the image sensor 1000 and generate an autofocus signal from the difference between the two output signals. Based on the autofocus signal, the image signal processor 1160 can control the lens assembly 1110 so that its focus precisely aligns with the surface of the image sensor 1000.

[0137] The electronic device ED01 may further include one or more additional camera modules having different attributes or functions from each other. Such camera modules may also have a configuration similar to camera module ED80 in Figure 28, and the image sensors provided therein may be embodied as CCD (Charged Coupled Device) sensors and / or CMOS (complementary metal oxide semiconductor) sensors, and may include one or more sensors selected from image sensors with different attributes, such as RGB sensors, BW (Black and White) sensors, IR sensors, or UV sensors. In such a case, one of the multiple camera modules ED80 may be a wide-angle camera and another may be a telephoto camera. Similarly, one of the multiple camera modules ED80 may be a front camera and another may be a rear camera.

[0138] Figure 19 is a block diagram of an electronic device including a multi-camera module, and Figure 20 is a detailed block diagram of one camera module provided in the electronic device of Figure 19.

[0139] Referring to Figure 19, the electronic device 1200 may include a camera module group 1300, an application processor 1400, a PMIC (Power Management Integrated Circuit) 1500, an external memory 1600, and an image generator 1700.

[0140] The camera module group 1300 may include multiple camera modules 1300a, 1300b, and 1300c. Even if the drawings illustrate an embodiment with three camera modules 1300a, 1300b, and 1300c, the embodiment is not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. Furthermore, in some embodiments, the camera module group 1300 may be modified to include n camera modules (where n is a natural number greater than or equal to 4).

[0141] The detailed configuration of camera module 1300b will be described in more detail below with reference to Figure 19, but the following description may also apply to other camera modules 1300a and 1300c depending on the embodiment.

[0142] Referring to Figure 19, the camera module 1300b may include a prism 1305, an optical path folding element (OPFE) 1310, an actuator 1330, an image sensing device 1340, and a storage unit 1350.

[0143] The prism 1305, which includes a reflective surface 1307 of a light-reflecting material, can deform the path of light L incident from the outside.

[0144] In several embodiments, the prism 1305 can change the path of light L incident in a first direction X to a second direction (Y direction) perpendicular to the first direction (X direction). The prism 1305 can also change the path of light L incident in a first direction X to a perpendicular second direction (Y direction) by rotating the reflective surface 1307 of the light-reflecting material in direction A around the central axis 1306, or by rotating the central axis 1306 in direction B. In this case, the OPFE 1310 can also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0145] In several embodiments, as illustrated, the maximum rotation angle of the prism 1305 in the A direction is 15° or less in the positive (+) A direction and greater than 15° in the negative (-) A direction, but the embodiments are not limited thereto.

[0146] In several embodiments, the prism 1305 moves approximately 20° in the positive (+) or negative (-)B direction, or between 10° and 20°, or between 15° and 20°, where the angle of movement can be the same angle in the positive (+) or negative (-)B direction, or to approximately similar angles within a range of about 1°.

[0147] In several embodiments, the prism 1305 can move the reflective surface 1307 of the light-reflecting material in a third direction (e.g., the Z direction) parallel to the extension direction of the central axis 1306.

[0148] The OPFE 1310 may include, for example, m (where m is a natural number) groups of optical lenses. The m lenses can be moved in a second direction (Y direction) to change the optical zoom ratio of the camera module 1300b. For example, if the basic optical zoom ratio of the camera module 1300b is denoted as Z, moving the m optical lenses included in the OPFE 1310 may change the optical zoom ratio of the camera module 1300b to 3Z, 5Z, or 10Z or higher.

[0149] The actuator 1330 can move the OPFE 1310 or the optical lens (hereinafter referred to as the optical lens) to a specific position. For example, the actuator 1330 can adjust the position of the optical lens so that the image sensor 1342 is positioned at the focal length of the optical lens for accurate sensing.

[0150] The image sensing device 1340 may include an image sensor 1342, control logic 1344, and memory 1346. The image sensor 1342 can sense an image of the object to be sensed using light L provided through an optical lens. The control logic 1344 can control the overall operation of the camera module 1300b. For example, the control logic 1344 can control the operation of the camera module 1300b by control signals provided through the control signal line CSLb.

[0151] Memory 1346 may store information necessary for the operation of the camera module 1300b, such as calibration data 1347. Calibration data 1347 may include information necessary for generating image data using light L supplied externally via the camera module 1300b. Calibration data 1347 may include, for example, information on the degree of rotation, focal length, and optical axis. If the camera module 1300b is implemented as a multi-state camera configuration in which the focal length changes depending on the position of the optical lens, calibration data 1347 may include focal length values ​​for each position (or state) of the optical lens and information related to autofocusing.

[0152] The storage unit 1350 can store image data sensed through the image sensor 1342. The storage unit 1350 is located outside the image sensing device 1340 and may be implemented in a stacked configuration with the sensor chips constituting the image sensing device 1340. In several embodiments, the storage unit 1350 may be implemented as an EEPROM (Electrically Erasable Programmable Read-Only Memory), but the embodiments are not limited thereto.

[0153] Referring to both Figures 19 and 20, in several embodiments, each of the multiple camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Thus, each of the multiple camera modules 1300a, 1300b, and 1300c may contain identical or different calibration data 1347 resulting from the operation of the actuator 1330 contained within it.

[0154] In several embodiments, one of the camera modules 1300a, 1300b, and 1300c (e.g., 1300b) is a folded lens camera module including the aforementioned prism 1305 and OPFE 1310, while the remaining camera modules (e.g., 1300a and 1300b) are vertical camera modules that do not include the prism 1305 and OPFE 1310, but the embodiments are not limited thereto.

[0155] In several embodiments, one of the multiple camera modules 1300a, 1300b, and 1300c (for example, 1300c) is also a vertical depth camera that extracts depth information using, for example, IR (Infrared Ray).

[0156] In several embodiments, at least two of the multiple camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may have different fields of view (angles of view). In this case, for example, the optical lenses of at least two of the multiple camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may be different from each other, but are not limited to this.

[0157] Furthermore, in some embodiments, the field of view of each of the camera modules 1300a, 1300b, and 1300c may differ from one another. In this case, the optical lenses included in each of the camera modules 1300a, 1300b, and 1300c may also differ from one another, but are not limited to this.

[0158] In several embodiments, the multiple camera modules 1300a, 1300b, and 1300c may be physically separated from each other. That is, rather than the sensing area of ​​a single image sensor 1342 being divided and used by the multiple camera modules 1300a, 1300b, and 1300c, an independent image sensor 1342 may be located inside each of the multiple camera modules 1300a, 1300b, and 1300c.

[0159] Furthermore, referring to Figure 14, the application processor 1400 may include an image processing unit 1410, a memory controller 1420, and internal memory 1430. The application processor 1400 may be implemented separately from the multiple camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the multiple camera modules 1300a, 1300b, and 1300c may be implemented separately as individual semiconductor chips.

[0160] The image processing device 1410 may include a plurality of image processors 1411, 1412, 1413, and a camera module controller 1414.

[0161] Image data generated from each of the camera modules 1300a, 1300b, and 1300c can be provided to the image processing unit 1410 via the respective separate image signal lines ISLa, ISLb, and ISLc. Such image data transmission can be performed, for example, using a Camera Serial Interface (CSI) based on MIPI (Mobile Industry Processor Interface), but the embodiments are not limited thereto.

[0162] Image data transmitted to the image processing device 1410 may be stored in external memory 1600 before being transmitted to image processors 1411 and 1412. Image data stored in external memory 1600 may be provided to image processors 1411 and / or 1412. Image processor 1411 may correct the received image data in order to generate a video. Image processor 1412 may correct the received image data in order to generate a still image. For example, image processors 1411 and 1412 may perform pre-processing operations on the image data, such as color correction and gamma correction.

[0163] Image processor 1411 may include subprocessors. If the number of subprocessors is the same as the number of camera modules 1300a, 1300b, and 1300c, each subprocessor may process image data provided by one camera module. If the number of subprocessors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one of the subprocessors may process image data provided by multiple camera modules using a time-division sharing technique. Image data processed by image processor 1411 and / or image processor 1412 may be stored in external memory 1600 before being transmitted to image processor 1413. Image data stored in external memory 1600 may be transmitted to image processor 1412. Image processor 1412 may perform post-processing operations on the image data, such as noise reduction and sharpening.

[0164] Image data processed by the image processor 1413 may be provided to the image generator 1700. The image generator 1700 may use the image data provided by the image processor 1413 via generating information or a mode signal to generate a final image.

[0165] Specifically, the image generator 1700 can generate an output image by merging at least a portion of the image data generated from camera modules 1300a, 1300b, and 1300c, which have different field of view angles, based on image generation information or mode signals. Alternatively, the image generator 1700 can generate an output image by selecting any one of the image data generated from camera modules 1300a, 1300b, and 1300c, which have different field of view angles, based on image generation information or mode signals.

[0166] In several embodiments, the image generation information may include a zoom signal or zoom factor. In several embodiments, the mode signal may also be a signal based on a mode selected by the user, for example.

[0167] If the image generation information is a zoom signal (zoom factor), and each camera module 1300a, 1300b, and 1300c has a different field of view (field of view angle), the image generator 1700 can perform different operations depending on the type of zoom signal. For example, if the zoom signal is a first signal, the image generator 1700 can merge the image data output from camera module 1300a and the image data output from camera module 1300c, and then generate an output image using the merged image signal and the image data output from camera module 1300b that was not used in the merging. If the zoom signal is a second signal different from the first signal, the image generator 1700 can not perform such image data merging, but instead select one of the image data output from each camera module 1300a, 1300b, and 1300c to generate an output image. However, the embodiment is not limited thereto, and the method of processing the image data can be modified in any way as needed.

[0168] The camera module controller 1414 can provide control signals to the respective camera modules 1300a, 1300b, and 1300c. The control signals generated by the camera module controller 1414 can be provided to the corresponding camera modules 1300a, 1300b, and 1300c through the mutually separated control signal lines CSLa, CSLb, and CSLc.

[0169] In several embodiments, the control signals provided from the camera module controller 1414 to the multiple camera modules 1300a, 1300b, and 1300c may include mode information provided by mode signals. Based on such mode information, the multiple camera modules 1300a, 1300b, and 1300c may operate in a first operating mode and a second operating mode in relation to the sensing speed.

[0170] Multiple camera modules 1300a, 1300b, and 1300c can, in a first operating mode, generate an image signal at a first speed (for example, an image signal at a first frame rate), encode it at a second speed higher than the first speed (for example, encode an image signal at a second frame rate higher than the first frame rate), and transmit the encoded image signal to the application processor 1400. In this case, the second speed is also 30 times or less the first speed.

[0171] The application processor 1400 stores the received image signal, i.e., the encoded image signal, in an internal memory 1430 or an external storage 1600. Subsequently, it can read the encoded image signal from the memory 1430 or storage 1600, decode it, and display the image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 of the image processing unit 1410 can perform decoding and also perform image processing on the decoded image signal.

[0172] Multiple camera modules 1300a, 1300b, and 1300c may, in a second operating mode, generate image signals at a third speed lower than the first speed (for example, generating image signals at a third frame rate lower than the first frame rate) and transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 are also unencoded signals. The application processor 1400 may perform image processing on the received image signals or store the image signals in memory 1430 or storage 1600.

[0173] The PMIC 1500 can supply power, such as a power supply voltage, to each of the multiple camera modules 1300a, 1300b, and 1300c. For example, under the control of the application processor 1400, the PMIC 1500 can supply first power to camera module 1300a via the power signal line PSLa, second power to camera module 1300b via the power signal line PSLb, and third power to camera module 1300c via the power signal line PSLc.

[0174] The PMIC 1500 can generate and adjust power levels for each of the multiple camera modules 1300a, 1300b, and 1300c in response to a power control signal PCON from the application processor 1400. The power control signal PCON may include power adjustment signals for each operating mode of the multiple camera modules 1300a, 1300b, and 1300c. For example, the operating mode may include a low power mode, in which case the power control signal PCON may include information relating to the camera modules operating in low power mode and the power levels to be set. The power levels provided to each of the multiple camera modules 1300a, 1300b, and 1300c may be the same or different from each other. Furthermore, the power levels may be changed dynamically.

[0175] The embodiments described above can be summarized as follows:

[0176] (1) An image sensor according to an embodiment may include: a sensor substrate including a plurality of unit light sensing cells; and a nano-optical lens array including at least one nanostructure arranged to focus incident light onto the plurality of unit light sensing cells, wherein the unit light sensing cells include a central light sensing cell and a plurality of peripheral light sensing cells surrounding the central light sensing cell; the nano-optical lens array includes a plurality of unit corresponding regions including at least one nanostructure corresponding to the plurality of unit light sensing cells; the at least one nanostructure provided in the unit corresponding region is arranged such that the phase profile of the incident light that has passed through the nano-optical lens array is focused onto the central light sensing cell and the plurality of peripheral light sensing cells; and the sensor may be configured to acquire an HDR (High Dynamic Range) image using an image acquired from the central light sensing cell and images acquired from the plurality of peripheral light sensing cells.

[0177] (2) Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, wherein the central light-sensing cell is provided in the center of the 3x3 array and the peripheral light-sensing cells are provided in the peripheral part of the 3x3 array.

[0178] (3) At least one nanostructure provided in the unit corresponding region may be arranged such that the phase profile of incident light passing through the nanooptical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

[0179] (4) The nanooptical lens array may include at least one nanostructure arranged to separate light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands from the incident light and focus them into the plurality of unit light sensing cells, respectively.

[0180] (5) The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell, and the nanooptical lens array includes a first unit corresponding region corresponding to the first unit light sensing cell, a second unit corresponding region corresponding to the second unit light sensing cell, a third unit corresponding region corresponding to the third unit light sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light sensing cell, and at least one nanostructure provided in the first unit corresponding region separates light of a first wavelength band from the incident light and provides it to the first unit light sensing cell. At least one nanostructure provided in the second unit corresponding region is arranged to concentrate light, and is arranged to separate light in the second wavelength band from the incident light and concentrate it on the second unit photosensing cell; at least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and concentrate it on the third unit photosensing cell; and at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and concentrate it on the fourth unit photosensing cell.

[0181] (6) At least one nanostructure provided in the first unit-corresponding region may be arranged symmetrically with respect to a first direction, at least one nanostructure provided in the second unit-corresponding region may be arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction, and at least one nanostructure provided in the fourth unit-corresponding region may be arranged symmetrically with respect to the second direction.

[0182] (7) At least one nanostructure provided in the corresponding unit region may be arranged such that the phase profile of incident light passing through the nanooptical lens array has a phase profile in the form of a Bessel function.

[0183] (8) Each of the plurality of unit light sensing cells includes a plurality of light sensing cells, and the size of the unit corresponding region is larger than the size of the light sensing cell.

[0184] (9) Each of the plurality of unit light sensing cells includes a plurality of light sensing cells, and the size of the unit corresponding area is the same as the size of the light sensing cell.

[0185] (10) An electronic device according to an embodiment includes: a lens assembly that forms an optical image of a subject; an image sensor that converts the optical image formed by the lens assembly into an electrical signal; and a processor that processes the signal generated by the image sensor; wherein the image sensor includes: a sensor substrate that includes a plurality of unit light sensing cells; and a nano-optical lens array that includes at least one nanostructure arranged to focus incident light onto the plurality of unit light sensing cells; wherein the unit light sensing cells include a central light sensing cell and a plurality of peripheral light sensing cells surrounding the central light sensing cell; the nano-optical lens array includes a plurality of unit corresponding regions that include at least one nanostructure corresponding to the plurality of unit light sensing cells; the at least one nanostructure provided in the unit corresponding region is arranged such that the phase profile of the incident light that has passed through the nano-optical lens array is focused onto the central light sensing cell and the plurality of peripheral light sensing cells; and the device may be configured to acquire an HDR (High Dynamic Range) image using the image acquired from the central light sensing cell and the images acquired from the plurality of peripheral light sensing cells.

[0186] (11) Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, wherein the central light-sensing cell is provided in the center of the 3x3 array and the peripheral light-sensing cells are provided in the periphery of the 3x3 array.

[0187] (12) At least one nanostructure provided in the unit corresponding region may be arranged such that the phase profile of incident light passing through the nanooptical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

[0188] (13) The nanooptical lens array may include at least one nanostructure arranged to separate light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands from the incident light and focus them into the plurality of unit light sensing cells, respectively.

[0189] (14) The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell, and the nanooptical lens array includes a first unit corresponding region corresponding to the first unit light sensing cell, a second unit corresponding region corresponding to the second unit light sensing cell, a third unit corresponding region corresponding to the third unit light sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light sensing cell, and at least one nanostructure provided in the first unit corresponding region separates light of a first wavelength band from the incident light and provides it to the first unit light sensing cell. At least one nanostructure provided in the second unit corresponding region is arranged to concentrate light, and is arranged to separate light in the second wavelength band from the incident light and concentrate it on the second unit photosensing cell; at least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and concentrate it on the third unit photosensing cell; and at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and concentrate it on the fourth unit photosensing cell.

[0190] (15) At least one nanostructure provided in the first unit-corresponding region may be arranged symmetrically with respect to a first direction, at least one nanostructure provided in the second unit-corresponding region may be arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction, and at least one nanostructure provided in the fourth unit-corresponding region may be arranged symmetrically with respect to the second direction.

[0191] (16) An electronic device in which at least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of incident light passing through the nanooptical lens array has a phase profile in the form of a Bessel function.

[0192] (17) Each of the plurality of unit light sensing cells includes a plurality of light sensing cells, and the size of the unit corresponding region is greater than the size of the light sensing cell.

[0193] (18) Each of the plurality of unit light sensing cells includes a plurality of light sensing cells, and the size of the unit corresponding area is the same as the size of the light sensing cell.

[0194] (19) An example embodiment of an HDR image generation method may include the steps of: acquiring a single shot image from a central light-sensing cell of a plurality of unit light-sensing cells and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell; binning the single shot images acquired from the peripheral light-sensing cells; performing HDR (High Dynamic Range) merging using the binned image and the image acquired from the central light-sensing cell; performing signal processing on the image acquired by performing the HDR merging; and outputting an HDR image.

[0195] (20) Each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, wherein the central light-sensing cell is provided in the center of the 3x3 array and the peripheral light-sensing cells are provided in the periphery of the 3x3 array.

[0196] Even though the aforementioned image sensors, electronic devices including them, and HDR image generation methods are described based on embodiments illustrated in the drawings, these are merely illustrative, and a person with ordinary skill in the art will understand that a variety of modifications and equivalent other embodiments are possible therefrom. Therefore, the disclosed embodiments should be considered in an explanatory rather than restrictive manner. The scope of rights is indicated in the claims, not in the foregoing description, and all differences within an equivalent scope should be interpreted as being included within the scope of rights. [Explanation of Symbols]

[0197] 1000 Image Sensors 1100 pixel array 110 Sensor board 120 Spacer layer 130 Nano Optical Lens Array 140 color filter layers

Claims

1. A sensor substrate containing multiple unit light sensing cells, A nanooptical lens array comprising at least one nanostructure arranged to focus incident light onto a plurality of unit light-sensing cells, The aforementioned unit light sensing cell is It includes a central light-sensing cell and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell, The nano-optical lens array includes a plurality of corresponding unit regions, each corresponding to a plurality of unit light-sensing cells and containing at least one nanostructure. At least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of the incident light passing through the nano-optical lens array is focused onto the central light-sensing cell and the plurality of peripheral light-sensing cells. An image sensor configured to acquire an HDR (High Dynamic Range) image using an image acquired from the central light-sensing cell and images acquired from the plurality of peripheral light-sensing cells.

2. The image sensor according to claim 1, wherein each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, the central light-sensing cell is provided in the center of the 3x3 array, and the peripheral light-sensing cells are provided in the peripheral part of the 3x3 array.

3. The image sensor according to claim 1, wherein the phase profile of incident light that has passed through the nano-optical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

4. The aforementioned nano-optical lens array is The image sensor according to claim 1, comprising at least one nanostructure arranged to separate incident light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands, and to focus them into the plurality of unit light sensing cells, respectively.

5. The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell. The nano-optical lens array includes a first unit corresponding region corresponding to the first unit light-sensing cell, a second unit corresponding region corresponding to the second unit light-sensing cell, a third unit corresponding region corresponding to the third unit light-sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light-sensing cell. At least one nanostructure provided in the first unit corresponding region is arranged to separate light in a first wavelength band from the incident light and focus it onto the first unit light sensing cell. At least one nanostructure provided in the second unit corresponding region is arranged to separate light in the second wavelength band from the incident light and focus it onto the second unit light sensing cell. At least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and focus it onto the third unit light sensing cell. The image sensor according to claim 1, wherein at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and focus it onto the fourth unit light sensing cell.

6. At least one nanostructure provided in the first unit corresponding region is arranged symmetrically with respect to the first direction, At least one nanostructure provided in the second unit corresponding region is arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction. The image sensor according to claim 5, wherein at least one nanostructure provided in the fourth unit corresponding region is arranged symmetrically with respect to the second direction.

7. The image sensor according to claim 1, wherein at least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of incident light passing through the nano-optical lens array has a Bessel function-like phase profile.

8. Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, The image sensor according to claim 1, wherein the size of the unit corresponding region is larger than the size of the light sensing cell.

9. Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, The image sensor according to claim 1, wherein the size of the unit corresponding region is the same as the size of the light sensing cell.

10. A lens assembly that forms an optical image of the subject, An image sensor that converts the optical image formed by the lens assembly into an electrical signal, The image sensor includes a processor that processes signals generated by the image sensor, The aforementioned image sensor is A sensor substrate containing multiple unit light sensing cells, A nanooptical lens array comprising at least one nanostructure arranged to focus incident light onto a plurality of unit light-sensing cells, The aforementioned unit light sensing cell is It includes a central light-sensing cell and a plurality of peripheral light-sensing cells surrounding the central light-sensing cell, The nano-optical lens array includes a plurality of corresponding unit regions, each corresponding to a plurality of unit light-sensing cells and containing at least one nanostructure. At least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of the incident light passing through the nano-optical lens array is focused onto the central light-sensing cell and the plurality of peripheral light-sensing cells. An electronic device configured to acquire an HDR (High Dynamic Range) image using an image acquired from the central light-sensing cell and images acquired from the plurality of peripheral light-sensing cells.

11. The electronic device according to claim 10, wherein each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, the central light-sensing cell is provided in the center of the 3x3 array, and the peripheral light-sensing cells are provided in the peripheral part of the 3x3 array.

12. The electronic device according to claim 10, wherein at least one nanostructure provided in the unit corresponding region is arranged such that the phase profile of incident light passing through the nano-optical lens array has peaks at the center of the central corresponding region corresponding to the central light sensing cell and at the center of each peripheral corresponding region corresponding to the peripheral light sensing cell.

13. The aforementioned nano-optical lens array is The electronic device according to claim 10, comprising at least one nanostructure arranged to separate incident light in a first wavelength band, light in a second wavelength band different from the first wavelength band, and light in a third wavelength band different from the first and second wavelength bands, and to focus them into the plurality of unit light sensing cells, respectively.

14. The plurality of unit light sensing cells include a first unit light sensing cell, a second unit light sensing cell, a third unit light sensing cell, and a fourth unit light sensing cell. The nano-optical lens array includes a first unit corresponding region corresponding to the first unit light-sensing cell, a second unit corresponding region corresponding to the second unit light-sensing cell, a third unit corresponding region corresponding to the third unit light-sensing cell, and a fourth unit corresponding region corresponding to the fourth unit light-sensing cell. At least one nanostructure provided in the first unit corresponding region is arranged to separate light in a first wavelength band from the incident light and focus it onto the first unit light sensing cell. At least one nanostructure provided in the second unit corresponding region is arranged to separate light in the second wavelength band from the incident light and focus it onto the second unit light sensing cell. At least one nanostructure provided in the third unit corresponding region is arranged to separate light in the third wavelength band from the incident light and focus it onto the third unit light sensing cell. The electronic device according to claim 10, wherein at least one nanostructure provided in the fourth unit corresponding region is arranged to separate light in the fourth wavelength band from the incident light and focus it onto the fourth unit light sensing cell.

15. At least one nanostructure provided in the first unit corresponding region is arranged symmetrically with respect to the first direction, At least one nanostructure provided in the second unit corresponding region is arranged symmetrically with respect to the first direction and a second direction perpendicular to the first direction. The electronic device according to claim 14, wherein at least one nanostructure provided in the fourth unit corresponding region is arranged symmetrically with respect to the second direction.

16. The electronic device according to claim 10, wherein at least one nanostructure provided in the corresponding unit region is arranged such that the phase profile of incident light passing through the nano-optical lens array has a phase profile in the form of a Bessel function.

17. Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, The electronic device according to claim 10, wherein the size of the unit corresponding region is larger than the size of the light sensing cell.

18. Each of the aforementioned plurality of unit light-sensing cells includes a plurality of light-sensing cells, The electronic device according to claim 10, wherein the size of the unit corresponding region is the same as the size of the light sensing cell.

19. A step of acquiring a single-shot image from a central light-sensing cell of multiple unit light-sensing cells and multiple peripheral light-sensing cells surrounding the central light-sensing cell, The step of binning the image obtained from the ambient light sensing cell among the single shot images, The process involves performing HDR (High Dynamic Range) merging using the binned image and the single-shot image obtained from the central light-sensing cell, The steps include: performing signal processing on the image obtained by performing the aforementioned HDR merging; A method for generating an HDR image, including the step of outputting an HDR image.

20. The HDR image generation method according to claim 19, wherein each of the plurality of unit light-sensing cells includes a plurality of light-sensing cells arranged in a 3x3 array, the central light-sensing cell is provided in the center of the 3x3 array, and the peripheral light-sensing cells are provided in the peripheral part of the 3x3 array.

Images