A process module configured to perform simultaneous epitaxial deposition of material layers, and a semiconductor processing system using such a process module.
A dual-chamber process module with independent temperature and gas flow control addresses throughput limitations in semiconductor processing systems by allowing simultaneous epitaxial deposition, enhancing efficiency and reducing deposition time.
JP2026093361APending Publication Date: 2026-06-08ASM IP HLDG BV
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ASM IP HLDG BV
- Filing Date
- 2025-11-21
- Publication Date
- 2026-06-08
Smart Images
Figure 2026093361000001_ABST
Abstract
A process module configured to perform simultaneous epitaxial deposition of material layers is disclosed. [Solution] The module comprises a common chamber housing and has two chamber bodies arranged therein. Each chamber body includes a ceramic welded joint having an upper and lower wall, injection and exhaust chamber flanges, and an exhaust flange having inner and outer sealing surfaces. A cover plate forms a seal with the outer sealing surface of the exhaust flange. The module also features a pressure cylinder having a piston that applies a compressive force between the exhaust flange and the injection chamber flange. A semiconductor processing system including such a process module is also disclosed.
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