Semiconductor equipment
The semiconductor device achieves stable characteristics through specific electrode and semiconductor region configurations, utilizing materials like Ti and W for stable Schottky contact, addressing stability challenges and enhancing performance.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2024-11-28
- Publication Date
- 2026-06-09
AI Technical Summary
Existing semiconductor devices face challenges in achieving stable characteristics.
The semiconductor device is designed with specific electrode and semiconductor region configurations, including a first electrode, a second electrode with portions, a third electrode, and a semiconductor member with defined sub-regions, along with insulating members to control current flow and stabilize positional relationships, utilizing materials like Ti, W, and silicon for stable Schottky contact.
This configuration enables stable characteristics, better recovery characteristics, and low electrical resistance, facilitating a simple process to achieve small gate capacitance and high adhesion, resulting in a semiconductor device with improved stability and performance.
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Figure 2026093792000001_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to semiconductor devices.
Background Art
[0002] For example, in semiconductor devices, stable characteristics are desired.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] Embodiments of the present invention provide a semiconductor device capable of obtaining stable characteristics.
Means for Solving the Problems
[0005] According to embodiments of the present invention, the semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first insulating member. The second electrode includes a first electrode portion and a second electrode portion. The direction from the first electrode to the first electrode portion is along a first direction. The second electrode portion is electrically connected to the first electrode portion. The semiconductor member includes a first semiconductor region of a first conductivity type. The first semiconductor region includes a first sub-region, a second sub-region, and a third sub-region. The first sub-region lies between the first electrode and the third electrode in the first direction. The second sub-region lies between the first electrode and the second electrode portion in the first direction. The third sub-region lies between at least a portion of the second electrode portion and the third electrode in a second direction intersecting the first direction. The first semiconductor region includes at least one of a fourth sub-region and a fifth sub-region. At least a portion of the fourth sub-region lies between the third electrode and the first electrode portion in the first direction. At least a portion of the fifth sub-region lies between the second electrode portion and the first electrode portion in the first direction. The first insulating member is provided between the third electrode and the semiconductor member. [Brief explanation of the drawing]
[0006] [Figure 1] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating a part of a semiconductor device according to the first embodiment. [Figure 3] Figure 3 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 6] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 8] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 9] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Modes for carrying out the invention]
[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.
[0008] (First Embodiment) Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 2 is a schematic cross-sectional view illustrating a part of a semiconductor device according to the first embodiment. Figure 3 is a schematic perspective view illustrating a semiconductor device according to the first embodiment. As shown in Figure 1, the semiconductor device 110 according to this embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a semiconductor member 10M, and a first insulating member 41.
[0009] The second electrode 52 includes a first electrode portion 52a and a second electrode portion 52b. The direction from the first electrode 51 to the first electrode portion 52a is along the first direction D1. The first direction D1 is defined as the Y-axis direction. One direction perpendicular to the Y-axis direction is defined as the X-axis direction. The directions perpendicular to the Y-axis direction and the X-axis direction are defined as the Z-axis direction.
[0010] The second electrode portion 52b is electrically connected to the first electrode portion 52a.
[0011] The semiconductor member 10M includes a first semiconductor region 11 of a first conductivity type. The first conductivity type is one of an n-type and a p-type. For example, the first conductivity type may be n-type.
[0012] The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The first partial region 11a is between the first electrode 51 and the third electrode 53 in the first direction D1. The second partial region 11b is between the first electrode 51 and the second electrode portion 52b in the first direction D1. The third partial region 11c is between at least a part of the second electrode portion 52b and the third electrode 53 in the second direction D2. The second direction D2 intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction.
[0013] For example, the direction from at least a part of the second electrode portion 52b to at least a part of the third electrode 53 is along the second direction D2. The direction from the second partial region 11b to the first partial region 11a is along the second direction D2.
[0014] In this example, the first semiconductor region 11 includes at least one of a fourth partial region 11d and a fifth partial region 11e. At least a part of the fourth partial region 11d is between the third electrode 53 and the first electrode portion 52a in the first direction D1. At least a part of the fifth partial region 11e is between the second electrode portion 52b and the first electrode portion 52a in the first direction D1.
[0015] The first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10M. The first insulating member 41 electrically insulates between the third electrode 53 and the semiconductor member 10M. For example, a part of the first insulating member 41 is provided between the third partial region 11c and the third electrode 53. For example, another part of the first insulating member 41 is provided between the third electrode 53 and the fourth partial region 11d.
[0016] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential referenced to the potential of the second electrode 52. The first electrode 51 functions, for example, as a drain electrode. The second electrode 52 functions, for example, as a source electrode. The third electrode 53 functions, for example, as a gate electrode. The semiconductor device 110 is, for example, a transistor.
[0017] For example, the thickness of the depletion layer formed between the third subregion 11c and the second electrode 52 is controlled by the potential of the third electrode 53. For example, the third subregion 11c becomes at least part of the channel.
[0018] In this embodiment, as described above, at least one of the fourth subregion 11d and the fifth subregion 11e is provided. This allows for the stable acquisition of the desired structure. For example, a stable shape of the third subregion 11c is easily obtained. The relative positional relationship between the third electrode 53 and the third subregion 11c is stabilized. For example, the relative positional relationship between the second electrode portion 52b and the third subregion 11c is stabilized. For example, high adhesion is easily obtained in the film that becomes the second electrode portion 52b. For example, the quality of the second electrode portion 52b is easily stabilized. According to this embodiment, a semiconductor device that can obtain stable characteristics can be provided.
[0019] For example, since the second electrode portion 52b makes Schottky contact with the first semiconductor region 11, better recovery characteristics can be obtained compared to the reference example that does not utilize a Schottky barrier. For example, a short gate length can be applied, resulting in a small gate capacitance. The process is simple, and stable characteristics are easily obtained.
[0020] For example, the second electrode portion 52b includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf. On the other hand, the semiconductor member 10M may contain silicon. The second electrode portion 52b of the above material makes it easy to obtain a stable Schottky contact.
[0021] The first electrode portion 52a may contain the same material as the second electrode portion 52b. The material of the first electrode portion 52a may be substantially the same as the material of the second electrode portion 52b.
[0022] As shown in Figure 1, in this example, the second electrode 52 further includes a third electrode portion 52c. The third electrode portion 52c electrically connects the second electrode portion 52b to the first electrode portion 52a. In this example, at least a portion of the third electrode portion 52c lies between a portion of the first semiconductor region 11 and another portion of the first semiconductor region 11. The material of the third electrode portion 52c may be substantially the same as the material of the second electrode portion 52b.
[0023] The first electrode portion 52a, the second electrode portion 52b, and the third electrode portion 52c may be formed together.
[0024] As shown in Figure 1, the semiconductor member 10M may further include a second semiconductor region 12 of a first conductivity type. At least a portion of the second semiconductor region 12 is provided between at least one of the fourth subregion 11d and the fifth subregion 11e and the first electrode portion 52a in the first direction D1. The concentration of the second impurity of the first conductivity type in the second semiconductor region 12 is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region 11. This makes it possible to lower the electrical resistance between the second electrode 52 and the first semiconductor region 11. For example, a low on-resistance can be obtained.
[0025] In one example, the concentration of the first impurity is, for example, 1 × 10⁻⁶ 14 cm -3 The above is 1 x 10 17 cm -3 The following applies: The concentration of the second impurity is 1 × 10⁻⁶ 18 cm -3 The above is 1 x 10 22 cm -3 The following applies:
[0026] As shown in Figure 1, at least a portion of the second semiconductor region 12 may be in contact with the first electrode portion 52a. This makes it easier to obtain low electrical resistance.
[0027] As shown in Figure 1, the second electrode portion 52b may include the first portion p1 and the second portion p2. The first portion p1 is located between the second portion p2 and the third electrode 53 in the second direction D2. The third portion region 11c is located between the first portion p1 and the third electrode 53 in the second direction D2.
[0028] The first semiconductor region 11 may further include a sixth subregion 11f. The sixth subregion 11f is located between the second subregion p2 and the first subregion p1 in the second direction D2.
[0029] The second electrode portion 52b may include a third portion p3 and a fourth portion p4. The third portion p3 is located between the first electrode 51 and the first electrode portion 52a in the first direction D1. The fourth portion p4 is located between the third portion p3 and the first electrode portion 52a in the first direction D1. The sixth portion region 11f is located between the third portion p3 and the fourth portion p4 in the first direction D1.
[0030] The third portion p3 may be continuous with the first portion p1 and the second portion p2. The fourth portion p4 may be continuous with the first portion p1 and the second portion p2. For example, in a plane including the first direction D1 and the second direction D2, the first portion p1, the second portion p2, the third portion p3 and the fourth portion p4 are provided around the sixth portion region 11f. For example, in a plane including the first direction D1 and the second direction D2, the sixth portion region 11f may be surrounded by the second electrode portion 52b.
[0031] As shown in Figure 1, the semiconductor device 110 may further include a first conductive member 61 and a second insulating member 42. The first conductive member 61 is electrically connected to the second electrode 52. For example, at a position different from the cross-section in Figure 1, the first conductive member 61 may be electrically connected to the second electrode 52 by a first wiring 61L or the like.
[0032] The position of the first conductive member 61 in the first direction D1 (first conductive member position) is between the position of the first electrode 51 in the first direction D1 (first electrode position) and the position of the second electrode portion 52b in the first direction D1 (second electrode portion position). The second insulating member 42 is located between the first conductive member 61 and the first semiconductor region 11. For example, the second insulating member 42 electrically insulates the first conductive member 61 and the first semiconductor region 11.
[0033] Such a first conductive member 61 mitigates the concentration of the electric field. For example, it is easier to obtain high voltage resistance. Stable operation is easier to achieve. The first conductive member 61 functions, for example, as a field plate.
[0034] As shown in Figure 1, the first semiconductor region 11 may include a seventh partial region 11g. At least a portion of the seventh partial region 11g lies between the second insulating member 42 and the second electrode portion 52b. The provision of the seventh partial region 11g allows for a more stable formation of the second electrode portion 52b. For example, high adhesion can be easily obtained in the metal that forms the second electrode portion 52b.
[0035] In Figure 2, a portion of Figure 1 is shown in an enlarged view. The length of the third sub-region 11c along the second direction D2 is defined as the width w1 of the third sub-region. The threshold voltage can be controlled by the width w1 of the third sub-region. A larger width w1 of the third sub-region results in a lower threshold voltage. In this embodiment, the width w1 of the third sub-region may be, for example, 20 nm or more and 80 nm or less. A practical threshold voltage can be obtained.
[0036] As shown in Figure 3, the semiconductor device 110 may include a substrate 50S. A third direction D3 from the substrate 50S to the first electrode 51, the second electrode 52, and the semiconductor member 10M intersects a plane containing the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction. The third electrode 53 extends, for example, along the third direction D3. The first electrode 51 is aligned with the XZ plane. The first electrode portion 52a of the second electrode 52 is aligned with the XZ plane.
[0037] As illustrated in Figure 3, for example, the semiconductor device 110 can be formed by a simple process. For example, a hole (trench) corresponding to the second electrode portion 52b is formed in the semiconductor layer which will become the semiconductor material 10M. The second electrode portion 52b is obtained by forming a metal film inside the hole. The first electrode portion 52a may be formed at the same time as the second electrode portion 52b.
[0038] In the semiconductor device 110, a plurality of third electrodes 53 may be provided. The plurality of third electrodes 53 are arranged along the second direction D2. A plurality of first conductive members 61 may be provided. The plurality of first conductive members 61 are arranged along the second direction D2.
[0039] Figure 4 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 4, in the semiconductor device 111 according to this embodiment, the first semiconductor region 11 includes the fourth subregion 11d but does not include the fifth subregion 11e. Aside from this, the configuration of the semiconductor device 111 may be the same as that of the semiconductor device 110. Even in such a semiconductor device 111, the relative positional relationship between the third electrode 53 and the third subregion 11c is stabilized. The desired structure can be stably obtained. A semiconductor device that can obtain stable characteristics can be provided.
[0040] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 5, in the semiconductor device 112 according to this embodiment, the first semiconductor region 11 includes the fifth subregion 11e but does not include the fourth subregion 11d. Except for this, the configuration of the semiconductor device 112 may be the same as that of the semiconductor device 110. Even in such a semiconductor device 112, for example, the relative positional relationship between the second electrode portion 52b and the third subregion 11c is stabilized. For example, the quality of the second electrode portion 52b is easily stabilized. A semiconductor device that can obtain stable characteristics can be provided.
[0041] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 6, the semiconductor device 113 according to this embodiment includes a second silicide member 12S. Aside from this, the configuration of the semiconductor device 113 may be the same as that of the semiconductor device 110.
[0042] In semiconductor device 113, at least a portion of the second silicide member 12S is located between the second insulating member 42 and the second electrode portion 52b. In this way, the second silicide member 12S may be provided at the position of the seventh partial region 11g in semiconductor device 110. In semiconductor device 114 as well, the desired structure can be stably obtained. A semiconductor device that can obtain stable characteristics can be provided.
[0043] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 7, in the semiconductor device 114 according to this embodiment, the configuration of the first conductive member 61 is different from that of the semiconductor device 110. Aside from this, the configuration of the semiconductor device 114 may be the same as that of the semiconductor device 110.
[0044] In the semiconductor device 114, at least a portion of the first conductive member 61 is located between the first electrode 51 and the third electrode 53 in the first direction D1. In the embodiment, the positional relationship between the first conductive member 61 and the third electrode 53 in the second direction D2 is arbitrary. In the embodiment, the positional relationship between the first conductive member 61 and the second electrode portion 52b in the second direction D2 is arbitrary.
[0045] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 8, in the semiconductor device 115 according to this embodiment, the configuration of the first conductive member 61 and the third electrode 53 differs from that of the semiconductor device 110. Aside from this, the configuration of the semiconductor device 115 may be the same as that of the semiconductor device 110.
[0046] In the semiconductor device 115, a plurality of third electrodes 53 are arranged along a second direction D2. A plurality of first conductive members 61 are arranged along the second direction D2. The pitch of the plurality of first conductive members 61 in the second direction D2 (first conductive member pitch) is different from the pitch of the plurality of third electrodes 53 in the second direction D2 (third electrode pitch). In this embodiment, the positional relationship between the third electrodes 53 and the first conductive members 61 can be modified in various ways.
[0047] (Second Embodiment) Figure 9 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. As shown in Figure 9, the semiconductor device 120 according to this embodiment includes a first silicide member 11S. Aside from this, the configuration of the semiconductor device 120 may be the same as that of the semiconductor device 110 and the like.
[0048] In the semiconductor device 120, the first semiconductor region 11 of the semiconductor member 10M includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. As already described, the first partial region 11a is located between the first electrode 51 and the third electrode 53 in the first direction D1. The second partial region 11b is located between the first electrode 51 and the second electrode portion 52b in the first direction D1. The third partial region 11c is located between at least a portion of the second electrode portion 52b and the third electrode 53 in the second direction D2 intersecting the first direction D1.
[0049] The first silicide member 11S includes at least one of the fourth partial region 11d and the fifth partial region 11e. At least a portion of the fourth partial region 11d lies between the third electrode 53 and the first electrode portion 52a in the first direction D1. At least a portion of the fifth partial region 11e lies between the second electrode portion 52b and the first electrode portion 52a in the first direction D1.
[0050] In this embodiment, at least one of the fourth subregion 11d and the fifth subregion 11e may contain silicide. At least one of the fourth subregion 11d and the fifth subregion 11e may contain a semiconductor of the first conductivity type. The desired structure can be stably obtained in the semiconductor device 113 as well. A semiconductor device that can obtain stable characteristics can be provided.
[0051] In the semiconductor device 120, the configuration described with respect to the first embodiment may be applied. In the semiconductor device 120, for example, a second silicide member 12S may be provided. In the semiconductor device 120, for example, the configuration described with respect to the semiconductor device 114 or semiconductor device 115 may be applied.
[0052] The embodiments may include the following technical proposals. (Technical proposal 1) First electrode and, A second electrode comprising a first electrode portion and a second electrode portion, wherein the direction from the first electrode to the first electrode portion is along the first direction, and the second electrode portion is electrically connected to the first electrode portion, The third electrode and A semiconductor member comprising a first semiconductor region of a first conductivity type, wherein the first semiconductor region comprises a first partial region, a second partial region and a third partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the second partial region being located between the first electrode and the second electrode portion in a first direction, the third partial region being located between at least a portion of the second electrode portion and the third electrode in a second direction intersecting the first direction, the first semiconductor region comprising at least one of a fourth partial region and a fifth partial region, at least a portion of the fourth partial region being located between the third electrode and the first electrode portion in a first direction, and at least a portion of the fifth partial region being located between the second electrode portion and the first electrode portion in a first direction, the semiconductor member, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with the following features.
[0053] (Technical proposal 2) First electrode and, A second electrode comprising a first electrode portion and a second electrode portion, wherein the direction from the first electrode to the first electrode portion is along the first direction, and the second electrode portion is electrically connected to the first electrode portion, The third electrode and A semiconductor member comprising a first semiconductor region of a first conductivity type, wherein the first semiconductor region comprises a first partial region, a second partial region and a third partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the second partial region being located between the first electrode and the second electrode portion in a first direction, and the third partial region being located between at least a portion of the second electrode portion and the third electrode in a second direction intersecting the first direction, and the semiconductor member comprising, A first silicide member comprising at least one of a fourth and a fifth subregion, wherein at least a portion of the fourth subregion is located between the third electrode and the first electrode portion in the first direction, and at least a portion of the fifth subregion is located between the second electrode portion and the first electrode portion in the first direction, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with the following features.
[0054] (Technical proposal 3) A semiconductor device according to Technical Proposal 1 or 2, wherein the current flowing between the first electrode and the second electrode is configured to be controlled by the potential of the third electrode.
[0055] (Technical proposal 4) The semiconductor device according to any one of the technical proposals 1 to 3, wherein the second electrode portion is in Schottky contact with the first semiconductor region.
[0056] (Technical proposal 5) The semiconductor device according to any one of the technical proposals 1 to 4, wherein the second electrode portion includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.
[0057] (Technical proposal 6) The semiconductor device according to any one of Technical Proposals 1 to 5, wherein the first electrode portion includes the material contained in the second electrode portion.
[0058] (Technical proposal 7) The semiconductor member further includes a second semiconductor region of the first conductivity type, At least a portion of the second semiconductor region is located between at least one of the fourth and fifth subregions and the first electrode portion in the first direction. The semiconductor device according to any one of Technical Proposals 1 to 6, wherein the concentration of the second impurity of the first conductivity type in the second semiconductor region is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region.
[0059] (Technical proposal 8) The semiconductor device according to Technical Proposal 7, wherein at least a portion of the second semiconductor region is in contact with the first electrode portion.
[0060] (Technical proposal 9) The second electrode portion includes the first portion and the second portion, The first portion is located between the second portion and the third electrode in the second direction. The third subregion is located between the first subregion and the third electrode in the second direction. The first semiconductor region further includes a sixth subregion, The semiconductor device according to any one of Technical Proposals 1 to 8, wherein the sixth sub-region is located between the second portion and the first portion in the second direction.
[0061] (Technical proposal 10) The second electrode portion includes a third portion and a fourth portion, The third portion is located between the first electrode and the first electrode portion in the first direction. The fourth portion is located between the third portion and the first electrode portion in the first direction. The semiconductor device according to Technical Proposal 9, wherein the sixth sub-region is located between the third and fourth sub-regions in the first direction.
[0062] (Technical proposal 11) The third part is continuous with the first and second parts, The fourth part is a semiconductor device according to the technical proposal 10, continuous with the first and second parts.
[0063] (Technical proposal 12) The semiconductor device according to any one of the technical proposals 1 to 11, wherein the second electrode further includes a third electrode portion that electrically connects the second electrode portion to the first electrode portion.
[0064] (Technical proposal 13) The semiconductor device according to Technical Proposal 12, wherein at least a portion of the third electrode portion is located between a portion of the first semiconductor region and another portion of the first semiconductor region.
[0065] (Technical proposal 14) A first conductive member electrically connected to the second electrode, The second insulating member, Furthermore, The position of the first conductive member in the first direction is between the position of the first electrode in the first direction and the position of the second electrode portion in the first direction. The second insulating member is located between the first conductive member and the first semiconductor region, and is a semiconductor device according to any one of Technical Proposals 1 to 13.
[0066] (Technical proposal 15) The first semiconductor region includes a seventh subregion, The semiconductor device according to Technical Proposal 14, wherein at least a portion of the seventh portion area is located between the second insulating member and the second electrode portion.
[0067] (Technical proposal 16) Further comprising a second silicide member, The semiconductor device according to Technical Proposal 14, wherein at least a portion of the second silicide member is located between the second insulating member and the second electrode portion.
[0068] (Technical proposal 17) The semiconductor device according to any one of Technical Proposals 1 to 16, wherein the width of the third partial region along the second direction of the third partial region is 20 nm or more and 80 nm or less.
[0069] (Technical proposal 18) Multiple third electrodes are provided, Multiple first conductive members are provided, The semiconductor device according to technical proposal 14 or 15, wherein the pitch of the plurality of first conductive members in the second direction is different from the pitch of the plurality of third electrodes in the second direction.
[0070] (Technical proposal 19) Further comprising a base, The semiconductor device according to any one of the technical proposals 1 to 18, wherein the third direction from the substrate to the first electrode, the second electrode, and the semiconductor member intersects with a plane including the first direction and the second direction.
[0071] (Technical proposal 20) The semiconductor device according to Technical Proposal 19, wherein the third electrode extends along the third direction.
[0072] According to the embodiment, a semiconductor device is provided that can obtain stable characteristics.
[0073] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.
[0074] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element included in a semiconductor device, such as electrodes, semiconductor members, semiconductor regions, and insulating members, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.
[0075] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.
[0076] All semiconductor devices and their manufacturing methods that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device and its manufacturing method described above as embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.
[0077] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.
[0078] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]
[0079] 10M: Semiconductor material, 11, 12: First and second semiconductor regions, 11S, 12S: First and second silicide materials, 11a~11g: First to seventh subregions, 41, 42: First and second insulating materials, 50S: Substrate, 51~53: First to third electrodes, 52a~52c: First to third electrode portions, 61: First conductive material, 61L: First wiring, 110~115, 120: Semiconductor device, D1~D3: First to third directions, p1~p4: First to fourth portions, w1: Width of the third subregion
Claims
1. First electrode and, A second electrode comprising a first electrode portion and a second electrode portion, wherein the direction from the first electrode to the first electrode portion is along the first direction, and the second electrode portion is electrically connected to the first electrode portion. The third electrode and A semiconductor member comprising a first semiconductor region of a first conductivity type, wherein the first semiconductor region comprises a first partial region, a second partial region and a third partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the second partial region being located between the first electrode and the second electrode portion in a first direction, the third partial region being located between at least a part of the second electrode portion and the third electrode in a second direction intersecting the first direction, the first semiconductor region comprising at least one of a fourth partial region and a fifth partial region, at least a part of the fourth partial region being located between the third electrode and the first electrode portion in a first direction, and at least a part of the fifth partial region being located between the second electrode portion and the first electrode portion in a first direction, the semiconductor member, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with the following features.
2. First electrode and, A second electrode comprising a first electrode portion and a second electrode portion, wherein the direction from the first electrode to the first electrode portion is along the first direction, and the second electrode portion is electrically connected to the first electrode portion. The third electrode and A semiconductor member comprising a first semiconductor region of a first conductivity type, wherein the first semiconductor region comprises a first partial region, a second partial region and a third partial region, the first partial region being located between the first electrode and the third electrode in a first direction, the second partial region being located between the first electrode and the second electrode portion in a first direction, and the third partial region being located between at least a part of the second electrode portion and the third electrode in a second direction intersecting the first direction, and the semiconductor member comprising, A first silicide member comprising at least one of a fourth and a fifth subregion, wherein at least a portion of the fourth subregion is located between the third electrode and the first electrode portion in the first direction, and at least a portion of the fifth subregion is located between the second electrode portion and the first electrode portion in the first direction, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with the following features.
3. The semiconductor device according to claim 1 or 2, wherein the current flowing between the first electrode and the second electrode is configured to be controlled by the potential of the third electrode.
4. The semiconductor device according to claim 1 or 2, wherein the second electrode portion is in Schottky contact with the first semiconductor region.
5. The semiconductor device according to claim 1 or 2, wherein the second electrode portion includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.
6. The semiconductor device according to claim 1 or 2, wherein the first electrode portion includes the material contained in the second electrode portion.
7. The semiconductor member further includes a second semiconductor region of the first conductivity type, At least a portion of the second semiconductor region is located between at least one of the fourth and fifth subregions and the first electrode portion in the first direction. The semiconductor device according to claim 1 or 2, wherein the concentration of the second impurity of the first conductivity type in the second semiconductor region is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region.
8. The semiconductor device according to claim 7, wherein at least a portion of the second semiconductor region is in contact with the first electrode portion.
9. The second electrode portion includes the first portion and the second portion, The first portion is located between the second portion and the third electrode in the second direction. The third subregion is located between the first subregion and the third electrode in the second direction. The first semiconductor region further includes a sixth subregion, The semiconductor device according to claim 1 or 2, wherein the sixth sub-region is located between the second portion and the first portion in the second direction.
10. The second electrode portion includes a third portion and a fourth portion, The third portion is located between the first electrode and the first electrode portion in the first direction. The fourth portion is located between the third portion and the first electrode portion in the first direction. The semiconductor device according to claim 9, wherein the sixth sub-region is located between the third and fourth portions in the first direction.
11. The third part is continuous with the first and second parts, The semiconductor device according to claim 10, wherein the fourth part is continuous with the first and second parts.
12. The semiconductor device according to claim 1 or 2, wherein the second electrode further includes a third electrode portion that electrically connects the second electrode portion to the first electrode portion.
13. The semiconductor device according to claim 12, wherein at least a portion of the third electrode portion is located between a portion of the first semiconductor region and another portion of the first semiconductor region.
14. A first conductive member electrically connected to the second electrode, The second insulating member, Furthermore, The position of the first conductive member in the first direction is between the position of the first electrode in the first direction and the position of the second electrode portion in the first direction. The semiconductor device according to claim 1 or 2, wherein the second insulating member is located between the first conductive member and the first semiconductor region.
15. The first semiconductor region includes a seventh subregion, The semiconductor device according to claim 14, wherein at least a portion of the seventh portion is located between the second insulating member and the second electrode portion.
16. Further comprising a second silicide member, The semiconductor device according to claim 14, wherein at least a portion of the second silicide member is located between the second insulating member and the second electrode portion.
17. The semiconductor device according to claim 1 or 2, wherein the width of the third partial region along the second direction is 20 nm or more and 80 nm or less.
18. Multiple third electrodes are provided, Multiple first conductive members are provided, The semiconductor device according to claim 14, wherein the pitch of the plurality of first conductive members in the second direction is different from the pitch of the plurality of third electrodes in the second direction.
19. Further comprising a base, The semiconductor device according to claim 1 or 2, wherein the third direction from the substrate to the first electrode, the second electrode, and the semiconductor member intersects a plane including the first direction and the second direction.
20. The semiconductor device according to claim 19, wherein the third electrode extends along the third direction.