Semiconductor equipment

Abstract

We provide semiconductor devices that offer stable operation. [Solution] According to the embodiment, the semiconductor device includes a first electrode and a semiconductor member containing gallium oxide. The first electrode includes a first surface in contact with the semiconductor member. The first surface includes an end and a non-end. A first direction from the semiconductor member to the first electrode intersects with a second direction from the end to the non-end. The semiconductor member includes first to third semiconductor regions. At least a portion of the second semiconductor region lies between the first semiconductor region and the end in the first direction. At least a portion of the third semiconductor region overlaps with the non-end in the first direction. The second semiconductor region contains at least one first element selected from the group consisting of F and Cl. The third semiconductor region does not contain the first element. Alternatively, the third concentration of the first element in the third semiconductor region is lower than the second concentration of the first element in the second semiconductor region.

Claims

1. First electrode and, A semiconductor material containing gallium oxide, Equipped with, The first electrode includes a first surface that contacts the semiconductor member, The first surface includes the end and the non-end, The first direction from the semiconductor member to the first electrode intersects with the second direction from the end to the non-end. The semiconductor member includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. At least a portion of the second semiconductor region is located between the first semiconductor region and the edge in the first direction, At least a portion of the third semiconductor region overlaps with the non-end in the first direction, The second semiconductor region comprises at least one first element selected from the group consisting of F and Cl. A semiconductor device wherein the third semiconductor region does not contain the first element, or the third concentration of the first element in the third semiconductor region is lower than the second concentration of the first element in the second semiconductor region.

2. The semiconductor device according to claim 1, wherein the first semiconductor region does not contain the first element, or the first concentration of the first element in the first semiconductor region is lower than the second concentration.

3. The semiconductor device according to claim 1 or 2, wherein the third silicon concentration in the third semiconductor region is higher than the second silicon concentration in the second semiconductor region.

4. The semiconductor device according to claim 3, wherein the first silicon concentration in the first semiconductor region is higher than the second silicon concentration.

5. The semiconductor device according to claim 1 or 2, wherein the first thickness of the second semiconductor region along the first direction is 30 nm or less.

6. The semiconductor member further includes a fourth semiconductor region comprising a second element, which includes at least one selected from the group consisting of nitrogen, iron, and magnesium. At least a portion of the fourth semiconductor region is located between the first semiconductor region and the edge, The semiconductor device according to claim 1 or 2, wherein at least a portion of the second semiconductor region is located between the fourth semiconductor region and the end portion.

7. The semiconductor device according to claim 6, wherein the third semiconductor region does not contain the second element, or the concentration of the second element in the third semiconductor region is lower than the concentration of the second element in the fourth semiconductor region.

8. The semiconductor device according to claim 7, wherein the first semiconductor region does not contain the second element, or the concentration of the second element in the first semiconductor region is lower than the concentration of the second element in the fourth semiconductor region.

9. The semiconductor device according to claim 6, wherein the second thickness of the fourth semiconductor region along the first direction is greater than the first thickness of the second semiconductor region along the first direction.

10. The first thickness is 30 nm or less. The semiconductor device according to claim 9, wherein the second thickness is greater than 100 nm and less than or equal to 1000 nm.

11. Further equipped with insulating material, The semiconductor device according to claim 6, wherein at least a portion of the insulating member is provided between the second semiconductor region and the first electrode in the first direction, and between the fourth semiconductor region and the first electrode in the first direction.

12. The semiconductor device according to claim 1 or 2, wherein the third semiconductor region is in contact with the non-end.

13. Further equipped with a second electrode, The semiconductor device according to claim 1 or 2, wherein the semiconductor member is located between the second electrode and the first electrode in the first direction.

14. An insulating member comprising at least one selected from the group consisting of nitrogen and oxygen, and silicon, A semiconductor material containing gallium oxide, Equipped with, The semiconductor member includes a first semiconductor region and a second semiconductor region, At least a portion of the second semiconductor region is located between the first semiconductor region and the insulating member. The second semiconductor region comprises at least one first element selected from the group consisting of F and Cl. A semiconductor device wherein the first semiconductor region does not contain the first element, or the first concentration of the first element in the first semiconductor region is lower than the second concentration of the first element in the second semiconductor region.

15. The semiconductor device according to claim 14, wherein the first thickness of the second semiconductor region is 30 nm or less.

16. The first electrode further comprises a first electrode portion, The semiconductor device according to claim 14, wherein at least a portion of the second semiconductor region and at least a portion of the insulating member are provided between the first semiconductor region and the first electrode portion.

17. The first electrode further includes a second electrode portion, The semiconductor component further includes a third semiconductor region, The third semiconductor region is in contact with the second electrode portion, The semiconductor device according to claim 16, wherein the third semiconductor region does not contain the first element, or the third concentration of the first element in the third semiconductor region is lower than the second concentration.

18. First electrode and, The second electrode and The third electrode and Furthermore, The semiconductor member is located between the second electrode and the first electrode, and between the second electrode and the third electrode. The first semiconductor region is a first conductivity type, The semiconductor member further includes a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type. The fourth semiconductor region is located between the first semiconductor region and the third electrode. The aforementioned third semiconductor region is located between the aforementioned fourth semiconductor region and the aforementioned third electrode. The semiconductor device according to claim 14, wherein the third semiconductor region is electrically connected to the third electrode.

19. The first semiconductor region includes a first partial region and a second partial region. The second semiconductor region is located between the first partial region and the first electrode in a first direction from the second electrode to the first electrode. The fourth semiconductor region is located between the second partial region and the third semiconductor region in the first direction. The semiconductor device according to claim 18, wherein the direction from the first partial region to the third semiconductor region intersects with the first direction.

20. The aforementioned third semiconductor region includes silicon, The semiconductor device according to claim 19, wherein the fourth semiconductor region contains nitrogen.

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