Semiconductor device and method for manufacturing a semiconductor device.

Abstract

We provide semiconductor devices using high-quality semiconductor films. [Solution] The semiconductor device comprises a substrate, a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer has a first region that is in contact with the upper surface of the substrate and overlaps with the gate electrode via the gate insulating layer, and a second region and a third region arranged to sandwich the first region. The substrate has a single-crystal structure. The semiconductor layer contains indium oxide having a single-crystal structure. The second region and the third region contain the first element.

Claims

1. It comprises a substrate, a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer has a first region that is in contact with the upper surface of the substrate and overlaps the gate electrode with the gate insulating layer, and a second region and a third region that are arranged to sandwich the first region. The substrate has a single crystal structure, The semiconductor layer comprises indium oxide having a single crystal structure. The second region and the third region contain the first element, The first element is at least one of titanium, tantalum, tungsten, molybdenum, tin, silicon, germanium, zirconium, hafnium, antimony, magnesium, hydrogen, boron, or phosphorus. Semiconductor equipment.

2. It comprises a substrate, a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer has a first region that is in contact with the upper surface of the substrate and overlaps the gate electrode with the gate insulating layer, and a second region and a third region that are arranged to sandwich the first region. The substrate contains aluminum oxide having a single crystal structure, and the surface in contact with the semiconductor layer is the (0001) surface or an equivalent surface. The semiconductor layer contains indium oxide having a single crystal structure, and the surface in contact with the substrate is the (111) surface or an equivalent surface. The second region and the third region contain the first element, The first element is at least one of titanium, tantalum, tungsten, molybdenum, tin, silicon, germanium, zirconium, hafnium, antimony, magnesium, hydrogen, boron, or phosphorus. Semiconductor equipment.

3. In claim 2, The aforementioned substrate has an off-angle of 0 degrees. Semiconductor equipment.

4. In claim 2, The aforementioned substrate has an off-angle greater than 0 degrees and less than or equal to 10 degrees. Semiconductor equipment.

5. In claim 3, The direction of the aforementioned off-angle is parallel to the [-2110] orientation of the substrate or its equivalent orientation. Semiconductor equipment.

6. A single-crystal semiconductor film is formed on a single-crystal substrate. The aforementioned semiconductor film is processed to form island-shaped semiconductor layers. A mask layer is formed by covering the first region of the semiconductor layer. The first element is added to the second and third regions that sandwich the first region of the semiconductor layer. A first insulating layer is formed to cover the semiconductor layer and the mask layer. The first insulating layer is flattened until the upper surface of the mask layer is exposed. The mask layer is removed to form grooves in the first insulating layer that reach the semiconductor layer. A gate insulating layer and a gate electrode are formed in order within the groove. The single-crystal substrate uses aluminum oxide having a single-crystal structure. The semiconductor layer uses indium oxide, The first element is at least one of titanium, tantalum, tungsten, molybdenum, tin, silicon, germanium, zirconium, hafnium, antimony, magnesium, hydrogen, boron, or phosphorus. Method for manufacturing semiconductor devices.

7. In claim 6, As the single crystal substrate, a single crystal substrate is used in which the surface to be formed is the (0001) plane or an equivalent plane. The semiconductor film is formed such that the surface in contact with the single crystal substrate is a (111) plane or an equivalent plane. Method for manufacturing semiconductor devices.

8. In claim 6, As the single crystal substrate, a substrate having an off-angle is used. The aforementioned off-angle is greater than 0 degrees and less than or equal to 10 degrees. Method for manufacturing semiconductor devices.

9. In claim 8, The direction of the aforementioned off-angle is parallel to the [-2110] orientation or equivalent orientation of the single crystal substrate. Method for manufacturing semiconductor devices.

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