Image sensor and imaging device

JP2026094147APending Publication Date: 2026-06-09NIKON CORP

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NIKON CORP
Filing Date
2026-02-03
Publication Date
2026-06-09

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  • Figure 2026094147000001_ABST
    Figure 2026094147000001_ABST
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Abstract

This enables independent, autonomous exposure for each of multiple pixels. [Solution] The image sensor comprises a first semiconductor substrate having a pixel section including first and second photoelectric conversion units arranged in the row direction, first and second transfer units for transferring each charge, first and second storage units for accumulating each charge, and first and second selection units for outputting signals to first and second signal lines; and a second semiconductor substrate having a first circuit section including first and second exposure processing units for calculating first and second evaluation values ​​related to storage time from first and second signals, and a drive unit for outputting selection control signals for controlling each selection unit, and first and second pixel drive units for outputting first and second transfer control signals for controlling each transfer unit based on each evaluation value via individual control lines. The configuration allows for both independent exposure control and common selection control for multiple photoelectric conversion units within the same pixel section.
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Claims

1. A first semiconductor substrate having a pixel section including: a first photoelectric conversion unit that converts light into electric charge; a second photoelectric conversion unit that converts light into electric charge and is arranged in the row direction alongside the first photoelectric conversion unit; a first transfer unit that transfers the charge converted by the first photoelectric conversion unit; a second transfer unit that transfers the charge converted by the second photoelectric conversion unit; a first storage unit that stores the charge transferred from the first photoelectric conversion unit by the first transfer unit; a second storage unit that stores the charge transferred from the second photoelectric conversion unit by the second transfer unit; a first output unit that outputs a first signal based on the charge transferred to the first storage unit to a first signal line and has a first selection unit electrically connected to the first signal line; and a second output unit that outputs a second signal based on the charge transferred to the second storage unit to a second signal line and has a second selection unit electrically connected to the second signal line. A semiconductor substrate laminated together with the first semiconductor substrate, the second semiconductor substrate having a first circuit section including a first exposure processing unit that uses the first signal to calculate a first evaluation value relating to the storage time for storing the charge converted by the first photoelectric conversion unit, a second exposure processing unit that uses the second signal to calculate a second evaluation value relating to the storage time for storing the charge converted by the second photoelectric conversion unit, and a drive unit that outputs a selection control signal for controlling the first selection unit and the second selection unit, and a second circuit section including a first pixel drive unit that outputs a first transfer control signal for controlling the first transfer unit based on the first evaluation value, and a second pixel drive unit that outputs a second transfer control signal for controlling the second transfer unit based on the second evaluation value, Equipped with, The first transfer unit is electrically connected to the first transfer control line from which the first transfer control signal is output. The second transfer unit is electrically connected to the second transfer control line from which the second transfer control signal is output. The first selection unit and the second selection unit are electrically connected to the selection control line on which the selection control signal is output. Image sensor.

2. In the image sensor according to claim 1, The second circuit section is positioned opposite the pixel section in the stacking direction in which the first semiconductor substrate and the second semiconductor substrate are stacked. The first circuit section is located outside the second circuit section. Image sensor.

3. In the image sensor according to claim 2, The pixel unit comprises a first pixel block including the first photoelectric conversion unit, the first transfer unit, the first storage unit, and the first output unit, and a second pixel block including the second photoelectric conversion unit, the second transfer unit, the second storage unit, and the second output unit. The second circuit unit includes a first control block including the first pixel drive unit and a second control block including the second pixel drive unit. The first control block is positioned opposite the first pixel block in the stacking direction, The second control block is positioned opposite the second pixel block in the stacking direction. Image sensor.

4. In the image sensor according to claim 3, The first control block includes a first exposure control unit that outputs a first transfer control signal, which is generated based on a first evaluation value, to the first pixel drive unit. The second control block includes a second exposure control unit that outputs the second transfer control signal, which is generated based on the second evaluation value, to the second pixel drive unit. Image sensor.

5. In the image sensor according to claim 4, The first exposure control unit includes a first pixel block control unit that generates the first transfer control signal, and a first level shift unit that adjusts the voltage level of the first transfer control signal generated by the first pixel block control unit. The second exposure control unit includes a second pixel block control unit that generates the second transfer control signal, and a second level shift unit that adjusts the voltage level of the second transfer control signal generated by the second pixel block control unit. Image sensor.

6. In the image sensor according to claim 5, The first pixel drive unit outputs the first transfer control signal, whose voltage level has been adjusted by the first level shift unit, to the first transfer control line. The second pixel drive unit outputs the second transfer control signal, whose voltage level has been adjusted by the second level shift unit, to the second transfer control line. Image sensor.

7. In the image sensor according to claim 1, The pixel section has a first discharge section for discharging the charge from the first photoelectric conversion section and a second discharge section for discharging the charge from the second photoelectric conversion section. The first pixel drive unit outputs a first ejection control signal for controlling the first ejection unit based on the first evaluation value. The second pixel drive unit outputs a second discharge control signal for controlling the second discharge unit based on the second evaluation value. Image sensor.

8. In the image sensor according to claim 7, The first discharge unit is electrically connected to the first discharge control line from which the first discharge control signal is output. The second discharge unit is electrically connected to the second discharge control line from which the second discharge control signal is output. Image sensor.

9. In the image sensor according to claim 8, The pixel unit includes a first reset unit for resetting the potential of the first storage unit and a second reset unit for resetting the potential of the second storage unit. The first circuit unit outputs a reset control signal for controlling the first reset unit and the second reset unit. Image sensor.

10. In the image sensor according to claim 9, The first reset unit and the second reset unit are electrically connected to a reset control line on which the reset control signal is output. Image sensor.

11. In the image sensor according to claim 1, The pixel unit includes a first reset unit for resetting the potential of the first storage unit and a second reset unit for resetting the potential of the second storage unit. The first circuit unit outputs a reset control signal for controlling the first reset unit and the second reset unit. Image sensor.

12. In the image sensor according to claim 11, The first reset unit and the second reset unit are electrically connected to a reset control line on which the reset control signal is output. Image sensor.

13. In the image sensor according to claim 3, The first control block includes a first signal processing unit that performs signal processing on the first signal, The second control block includes a second signal processing unit that performs signal processing on the second signal. Image sensor.

14. In the image sensor according to claim 13, The first signal processing unit includes a first conversion unit that converts the first signal into a digital signal, The second signal processing unit includes a second conversion unit that converts the second signal into a digital signal. Image sensor.

15. In the image sensor according to claim 14, The first exposure processing unit calculates the first evaluation value using the first digital signal converted from the first signal to a digital signal by the first conversion unit. The second exposure processing unit calculates the second evaluation value using the second digital signal converted from the second signal to a digital signal by the second conversion unit. Image sensor.

16. In the image sensor according to claim 1, The first circuit unit includes a first signal processing unit that performs signal processing on the first signal and a second signal processing unit that performs signal processing on the second signal. Image sensor.

17. In the image sensor according to claim 16, The first signal processing unit includes a first conversion unit that converts the first signal into a digital signal, The second signal processing unit includes a second conversion unit that converts the second signal into a digital signal. Image sensor.

18. In the image sensor according to claim 17, The first exposure processing unit calculates the first evaluation value using the first digital signal converted from the first signal to a digital signal by the first conversion unit. The second exposure processing unit calculates the second evaluation value using the second digital signal converted from the second signal to a digital signal by the second conversion unit. Image sensor.

19. An imaging device comprising an image sensor according to any one of claims 1 to 18.

20. In the imaging device according to claim 19, An imaging device comprising a lens drive unit for driving a lens unit that emits light to the image sensor.

21. In the imaging device according to claim 20, An imaging device comprising the aforementioned lens section.

22. In the image sensor according to any one of claims 1 to 18, An image sensor comprising a third semiconductor substrate, which is laminated together with the first semiconductor substrate and has a data processing unit for image processing.

23. An imaging device comprising the image sensor described in claim 22.

24. In the imaging device according to claim 23, An imaging device comprising a lens drive unit for driving a lens unit that emits light to the image sensor.

25. In the imaging device according to claim 24, An imaging device comprising the aforementioned lens section.