Imaging device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-03-06
- Publication Date
- 2026-06-09
AI Technical Summary
【0021】 本発明の一態様を用いることで、3次元的な集積化した撮像装置を提供することができる 。または、シリコン基板を用いたフォトダイオードおよび酸化物半導体を用いたトランジ スタを有する撮像装置を提供することができる。または、ノイズの少ない画像を撮像する ことができる撮像装置を提供することができる。または、解像度の高い撮像装置を提供す ることができる。または、高開口率の撮像装置を提供することができる。または、広い温 度範囲において使用可能な撮像装置を提供することができる。または、信頼性の高い撮像 装置を提供することができる。または、新規な撮像装置などを提供することができる。
Smart Images
Figure 2026094380000001_ABST
Abstract
Claims
1. A first layer having a first transistor, A second layer having a region located above the first layer and having a second transistor, A conductor that penetrates the second layer and the interface between the first layer and the second layer, A first photodiode and a second photodiode having a region positioned above the second layer, An insulating layer having a region positioned above the first photodiode and a region positioned above the second photodiode, A color filter having a region positioned above the insulating layer, The system includes a microlens array having a region positioned above the color filter, The second transistor, the first photodiode, and the second photodiode are included in the pixel array. The first transistor is included in the circuit that controls the pixel array, The first transistor has its gate electrode above the channel formation region. The second transistor has its gate electrode below the channel formation region. The conductor is electrically connected to the circuit, The conductor is arranged in a region that does not overlap with the microlens array. The insulating layer has a region disposed between the single-crystal silicon substrate on which the first photodiode and the second photodiode are formed and the conductor. The insulating layer has a region located in the groove between the first photodiode and the second photodiode. The insulating layer is a hafnium oxide film. Imaging device.
2. A first layer having a first transistor, A second layer having a region located above the first layer and having a second transistor, A conductor that penetrates the second layer and the interface between the first layer and the second layer, A first photodiode and a second photodiode having a region positioned above the second layer, An insulating layer having a region positioned above the first photodiode and a region positioned above the second photodiode, A color filter and a light-shielding layer having a region positioned above the insulating layer, The device comprises a microlens array having a region positioned above the color filter and a region positioned above the light-shielding layer, The second transistor, the first photodiode, and the second photodiode are included in the pixel array. The first transistor is included in the circuit that controls the pixel array, The first transistor has its gate electrode above the channel formation region. The second transistor has its gate electrode below the channel formation region. The conductor is electrically connected to the circuit, The conductor is arranged in a region that does not overlap with the microlens array. The insulating layer has a region disposed between the single-crystal silicon substrate on which the first photodiode and the second photodiode are formed and the conductor. The insulating layer has a region located in the groove between the first photodiode and the second photodiode. The insulating layer is a hafnium oxide film. Imaging device.
3. A first layer having a first transistor, A second layer having a region located above the first layer and having a second transistor, A conductor that penetrates the second layer and the interface between the first layer and the second layer, A first photodiode and a second photodiode having a region positioned above the second layer, An insulating layer having a region positioned above the first photodiode and a region positioned above the second photodiode, A color filter having a region positioned above the insulating layer, The system includes a microlens array having a region positioned above the color filter, The second transistor, the first photodiode, and the second photodiode are included in the pixel array. The first transistor is included in the circuit that controls the pixel array, The first transistor has its gate electrode above the channel formation region. The second transistor has its gate electrode below the channel formation region. The conductor is electrically connected to the circuit, The conductor is arranged in a region that does not overlap with the microlens array. The insulating layer has a region disposed between the single-crystal silicon substrate on which the first photodiode and the second photodiode are formed and the conductor. The insulating layer has a region located in the groove between the first photodiode and the second photodiode. The insulating layer has a laminated first insulating film and a second insulating film, The first insulating film is a silicon oxide film. The second insulating film is a hafnium oxide film. Imaging device.
4. A first layer having a first transistor, A second layer having a region located above the first layer and having a second transistor, A conductor that penetrates the second layer and the interface between the first layer and the second layer, A first photodiode and a second photodiode having a region positioned above the second layer, An insulating layer having a region positioned above the first photodiode and a region positioned above the second photodiode, A color filter and a light-shielding layer having a region positioned above the insulating layer, The device comprises a microlens array having a region positioned above the color filter and a region positioned above the light-shielding layer, The second transistor, the first photodiode, and the second photodiode are included in the pixel array. The first transistor is included in the circuit that controls the pixel array, The first transistor has its gate electrode above the channel formation region. The second transistor has its gate electrode below the channel formation region. The conductor is electrically connected to the circuit, The conductor is arranged in a region that does not overlap with the microlens array. The insulating layer has a region disposed between the single-crystal silicon substrate on which the first photodiode and the second photodiode are formed and the conductor. The insulating layer has a region located in the groove between the first photodiode and the second photodiode. The insulating layer has a laminated first insulating film and a second insulating film, The first insulating film is a silicon oxide film. The second insulating film is a hafnium oxide film. Imaging device.