Semiconductor equipment
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ROHM CO LTD
- Filing Date
- 2026-03-12
- Publication Date
- 2026-06-09
AI Technical Summary
【0007】 本開示によると、第1リードと第2リードとは、樹脂裏面の互いに反対側の端部から露出する。したがって、第1リードと第2リードとが樹脂裏面の同じ端部から露出する場合と比較して、ショートの発生が抑制される。
Smart Images

Figure 2026094432000001_ABST
Abstract
Claims
1. A switching element, and a semiconductor element having a main surface and a back surface facing opposite directions in the thickness direction, The semiconductor element is mounted on a first lead that conducts electricity to the semiconductor element, A second lead is provided, which is spaced apart from the first lead in a first direction perpendicular to the thickness direction and is conductive to the semiconductor element, A sealing resin covering a portion of the first lead and a portion of the second lead, and the semiconductor element, Equipped with, The sealing resin has a resin back surface facing the same side as the back surface of the element, The resin back surface comprises a first end located on the first side in the first direction, a second end located on the second side in the first direction, a third end located on one side of the second direction perpendicular to the thickness direction and the first direction, and a fourth end located on the other side of the second direction. The first lead is exposed from the first end, but not from the second, third, and fourth ends. The second lead is exposed from the second end, but not from the first end, the third end, and the fourth end. The first lead comprises a die pad portion on which the semiconductor element is mounted, and a first lead terminal portion connected to the first side of the die pad portion. The second lead comprises a joint portion having a joint portion main surface facing the same side as the main surface of the element and to which a plurality of wires electrically connected to the semiconductor element are joined, and a joint portion back surface exposed from the back surface of the resin, and a second lead terminal portion connected to the second side of the joint portion and exposed from the back surface of the resin, A semiconductor device in which the overall shape of the exposed surface of the second lead from the back surface of the resin is rectangular.
2. The semiconductor device according to claim 1, wherein the die pad portion includes a die pad portion back surface exposed from the resin back surface.
3. The first lead further comprises a first lead second terminal portion connected to the first side of the die pad portion, The first lead terminal portion and the first lead second terminal portion are spaced apart from each other in the second direction. The semiconductor device according to claim 2, wherein the first lead terminal portion and the first lead second terminal portion each have a back surface exposed from the back surface of the resin.
4. The first lead is provided with a recess on the back side of the die pad portion that is recessed toward the semiconductor element in the thickness direction from the back side of the die pad portion, The recess on the back side of the die pad portion is covered with the sealing resin. The semiconductor device according to claim 3, wherein a portion of the recess on the back side of the die pad portion is located between the first lead terminal portion and the first lead second terminal portion.
5. In the first direction, the device further comprises a third lead positioned on the second side of the first lead and providing electrical conductivity to the semiconductor element. The semiconductor device according to any one of claims 1 to 4, wherein the third lead is exposed from the second end and not exposed from the first end, the third end, and the fourth end.
6. The third lead has a back surface of the third lead terminal portion that is exposed from the back surface of the resin, The semiconductor device according to claim 5, wherein the overall shape of the exposed surface of the third lead from the back surface of the resin is rectangular.
7. The semiconductor device according to claim 6, wherein the third lead is located next to the second lead in the second direction.
8. The sealing resin further comprises a first resin side surface connected to the back surface of the resin and located on the first side, and a second resin side surface located on the second side. The first lead terminal portion further comprises a first lead terminal portion end face exposed from the first resin side surface, The second lead terminal portion further comprises a second lead terminal end face exposed from the second resin side surface, The semiconductor device according to any one of claims 1 to 7, wherein the end face of the first lead terminal portion is flush with the first resin side surface, and the end face of the second lead terminal portion is flush with the second resin side surface.
9. The sealing resin further comprises a third resin side surface connected to the back surface of the resin and located on the third end side, and a fourth resin side surface located on the fourth end side. The first lead includes a first lead connecting portion that extends outward from the die pad portion in the second direction, The second lead includes a second lead connecting portion that extends outward from the joint in the second direction, The semiconductor device according to claim 8, wherein the end face of the first lead connecting portion and the end face of the second lead connecting portion are exposed from the third resin side surface or the fourth resin side surface.
10. The semiconductor element is a transistor, comprising a first electrode, a second electrode, and a third electrode. The semiconductor device according to any one of claims 1 to 9, wherein the first electrode is electrically connected to the first lead, and the second electrode is electrically connected to the second lead.
11. The present invention further comprises a third lead positioned on the second side of the first lead and electrically connected to the third electrode, The semiconductor device according to claim 10, wherein the third lead is exposed from the second end.
12. The semiconductor device according to any one of claims 1 to 11, wherein both the dimension in the first direction and the dimension in the second direction are 1 mm or more and 3 mm or less.