Semiconductor equipment

Abstract

To provide reliable semiconductor devices. [Solution] An oxide semiconductor is formed, and a first insulator is deposited in contact with the oxide semiconductor, and the first A second insulator is formed on the first insulator, and a third insulator is formed on the second insulator. Openings are formed in the first insulator, the second insulator, and the first insulator, and the inside of the openings is cleaned. A conductor is embedded in the cleaned opening, and the first insulator is shaped to include an excess oxygen region. The second insulator has a higher barrier resistance to oxygen, hydrogen, or water than the first insulator. It is formed to have a certain property, and the opening is processed to be cylindrical or inverted cone-shaped. ru.

Claims

1. A first insulator having the function of a barrier layer, A transistor having an oxide semiconductor and a region located on the first insulator, A second insulator having a region located on the oxide semiconductor, A third insulator having a region located on the second insulator, A fourth insulator having a region located on the third insulator and functioning as a barrier layer, A first conductor having a region located on the fourth insulator, A second conductor having a region located on the fourth insulator, The third insulator has a region that is in contact with the upper surface of the second insulator. The fourth insulator has a region in contact with the upper surface and side surface of the third insulator, a region in contact with the side surface of the second insulator, and a region in contact with the upper surface of the first insulator. In a cross-sectional view, the second insulator and the oxide semiconductor are arranged between the first insulator and the third insulator. In a cross-sectional view, the second insulator and the oxide semiconductor are arranged so as to be surrounded by the first insulator and the fourth insulator. The first conductor is electrically connected to the transistor through the first opening provided in the second insulator, the third insulator, and the fourth insulator. The second conductor is electrically connected to the transistor through a second opening provided in the second insulator, the third insulator, and the fourth insulator. The second insulator comprises silicon and oxygen, The semiconductor device comprises aluminum and oxygen as the third insulator.

2. In claim 1, The first insulator comprises silicon and nitrogen, The semiconductor device comprises silicon and nitrogen as the fourth insulator.

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