Method for joining semiconductor devices

Abstract

Semiconductor device capable of suppressing oxidation of conductive parts on the surface of semiconductor devices or reducing oxides This provides a method for joining chairs together. [Solution] Hydrogen water is used to reduce oxides in the conductive parts of multiple semiconductor devices. A hydrogen water treatment step in which the process is carried out, and a step in which each of the plurality of semiconductor devices is joined to each other. A joining step in which the opposing surfaces of the conductive part on which the hydrogen water treatment has been performed are joined together Includes a joining step of direct joining.

Description

Technical Field

[0001] The present invention relates to a method for bonding semiconductor devices.

Background Art

[0002] For example, a semiconductor chip, which is a semiconductor device, is manufactured by cutting a wafer having a size of 8 inches or 12 inches into a predetermined size. At the time of cutting, a dicing film is attached to the back surface so that the cut semiconductor chips do not fall apart, and the wafer is cut from the front surface side by a dicing saw, a laser beam, or the like. At this time, the dicing film attached to the back surface is slightly cut but not cut, and each semiconductor chip is held. Then, each cut semiconductor chip is picked up from the dicing film one by one and sent to the next process such as flip chip bonding.

[0003] At the time of dicing, foreign substances such as cutting chips of the semiconductor wafer and cutting chips of the dicing film adhere to the surface of the semiconductor chip. Therefore, the surface of the semiconductor chip and the surface of the cut wafer are cleaned during or after dicing. In recent years, a bonding method has been used in which metal pads of other semiconductor chips are directly bonded to the metal pads of a semiconductor chip without using solder. When performing such bonding, the bonding quality may deteriorate even if fine foreign substances having a size of several microns to submicrons adhere to the surface.

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[0024] [[IDThe surface of the semiconductor chip is cleaned by removing the residue using a wiping component attached to the tip of the wiping arm. A semiconductor chip cleaning method has been proposed to remove fine organic foreign matter adhering to the chip. According to the cleaning method described in Patent Document 1, several microns to several sq. microns of material adhering to the surface of the semiconductor chip can be removed. It can completely remove even minute foreign objects as small as bumicrons. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2021 / 132133 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Semiconductor devices, such as semiconductor chips, have conductive parts made of copper or aluminum. The conductive parts oxidize easily upon contact with pure water or ozonated water. This part causes problems such as worsening the bonding condition and reducing electrical conductivity. ru.

[0007] In this regard, the cleaning method described in Patent Document 1 involves the cleaning process of semiconductor devices There is a risk that oxides may be newly formed on the conductive part, and that oxides may remain on the conductive part. Therefore, in order to improve bonding quality, a process is performed after the cleaning process. In the bonding process, the oxidation of the semiconductor chip surface is suppressed or the amount of oxide is reduced. There is a request for this.

[0008] This invention has been made in view of the above circumstances, and relates to the conductive part of the surface of a semiconductor device. The objective is to provide a semiconductor device bonding method that can suppress oxidation or reduce oxides. shall be.

Means for Solving the Problem

[0009] A method for bonding semiconductor devices according to one aspect of the present invention includes a hydrogen water treatment step of performing hydrogen water treatment for suppressing or reducing oxides of conductive portions of a plurality of semiconductor devices using hydrogen water, and a bonding step of bonding each of the plurality of semiconductor devices to each other, the bonding step directly bonding opposing surfaces of the conductive portions on which the hydrogen water treatment has been performed. .

Advantages of the Invention

[0010] According to the present invention, it is possible to provide a method for bonding semiconductor devices capable of suppressing oxidation of the conductive portions on the surface of the semiconductor devices or reducing oxides.

Brief Description of the Drawings

[0011] [Figure 1] It is a diagram showing an example of the outline of hybrid bonding. [Figure 2] It is a graph showing the effect of oxide suppression by hydrogen water. [Figure 3] An example of the configuration of a semiconductor chip manufacturing apparatus will be described. [Figure 4] It is a plan view showing an example of a wafer after dicing which is a cleaning target. [Figure 5] It is a plan view showing an example of the positional relationship between the first arm and the second arm. [Figure 6] It is a flowchart for explaining an example of the processing procedure of the method for bonding semiconductor devices according to an embodiment of the present invention. [Figure 7] It is a diagram showing the outline of the hydrogen water treatment process. [Figure 8] It is a diagram showing the outline of the removal process.

Modes for Carrying Out the Invention

[0012] A preferred embodiment of the present invention will be described with reference to the attached drawings. Components with the same reference numeral have the same or similar configuration. Semiconductor of one embodiment of the present invention The method for joining semiconductor devices involves the opposing surfaces of the conductive parts of multiple semiconductor devices. Before bonding that directly joins them (hereinafter referred to as "hybrid bonding"), The surface of the conductive parts of multiple semiconductor devices is treated with hydrogen water or hydrogen water containing microbubbles. Its defining characteristic is its ability to manage and understand.

[0013] Semiconductor devices include, for example, semiconductor wafers, and semiconductor wafers that have been diced into chips. This includes semiconductor chips, devices mounted on interposers, etc. The following is an example... Then, semiconductor devices are made from chip-shaped "semiconductor chips" obtained by dicing semiconductor wafers. I will explain it.

[0014] Refer to Figure 1 for an overview of hybrid bonding. This figure shows an example of lid bonding. Figure 1(a) shows hybrid bonding This shows the arrangement of the two semiconductor chips 11 before they are assembled. As shown in Figure 1(a), The metal pads 11a of the two semiconductor chips 11 are arranged to face each other. Figure 1(b) shows the bonding of the two semiconductor chips 11 when hybrid bonded. This shows the state. As shown in Figure 1(b), in hybrid bonding, for example, two The opposing metal pads 11a of the semiconductor chip 11 (for example, an integrated circuit IC) The parts are joined directly without the need for solder bumps.

[0015] Hybrid bonding is not constrained by the space limitations of solder pumps, allowing for more soldering. This enables interconnection of the conductor chips 11. For example, in the case of hybrid bonding... In addition, in the connection between the silicon wafer and the silicon die, for example, 5 μm to 25 μm, silicon This makes it possible to achieve an extremely short pitch of 5 μm or less when connecting wafers together.

[0016] The metal pad 11a is a metal region on the semiconductor chip 11 that enables electrical bonding. It is formed from a metal such as aluminum or copper. The semiconductor chip 11 is a metal pad An electrical connection to the outside is established through 11a.

[0017] Thus, in hybrid bonding, for example, the metal of two semiconductor chips 11 Each of the Lupad 11a is electrically directly joined. Therefore, hybrid bonding In comparison to bonding via solder bumps, the generation of oxides on the surface of the metal pad 11a is reduced. The conductivity is greatly affected by the conditions. In other words, the conductivity of the joint via the solder bump. In addition, even if oxides are generated on the surface of the metal pad 11a, the thermal energy of the solder bump Although the energy can establish a normal conductive state, on the other hand, the metal pad 11a is directly contacted If this occurs, then if oxides are present on the surface of the metal pad 11a, it will result in electrical resistance. The presence of oxides may prevent the normal establishment of the conductive state.

[0018] Therefore, in the semiconductor device bonding method of this embodiment, before hybrid bonding In the process, water having the effect of reducing oxides or suppressing oxidation in metal materials. By using plain water, the generation of oxides on the surface of the semiconductor chip 11 is suppressed. The basis for the oxidation-inhibiting effect or oxide-reducing effect is, for example, that copper is found in pure water with a pH of around 7. Because copper oxide is stable, oxidation proceeds, while in hydrogen water, pure copper is stable. This is because it exhibits the characteristic of preventing oxidation from progressing.

[0019] Referring to Figure 2, when pure copper (hereinafter referred to as "pure copper") is immersed in hydrogen water, an oxide is produced. We will now explain in detail the experimental results showing that the generation of [the substance] is suppressed. Figure 2 shows the oxide produced by hydrogen water. This graph shows the inhibitory effect. In Figure 2, the horizontal axis represents binding energy, and the vertical axis represents intensity. This is a graph. Figure 2 shows the bond energy and strength when pure copper is immersed in hydrogen water for 1 hour. The relationship between the bond energy and strength when pure copper is not immersed in hydrogen water is shown by the solid line L1. The relationship is shown by the dashed line L2.

[0020] Binding energy is the energy with which a system of multiple elements that attract each other can interact. The potential difference between a state in which particles exist clustered together and a state in which particles exist separately. It refers to the difference in energy. In other words, binding energy is the difference between atoms of a given amount of material. This refers to the energy required to separate a substance into its atoms.

[0021] Strength is an indicator of a substance's stability. In other words, the greater the strength, This indicates that the substance is stable.

[0022] As shown in Figure 2, pure copper at its stable binding energy (e.g., 933 eV). Regarding the strength, when immersed in hydrogen water for 1 hour (solid line L1 in Figure 2), the strength is different from when not immersed in hydrogen water. Compared to the combined material (dashed line L2 in Figure 2), the strength of pure copper is greater. In other words, Figure 2 shows pure copper When immersed in hydrogen water, the state of pure copper is more copper oxide than when not immersed in hydrogen water. It has been shown that it is more stable than the state. Thus, when pure copper is immersed in hydrogen water, pure copper This produces the effect of making it less susceptible to oxidation. A similar effect occurs with metals other than copper. I think that by immersing oxidized copper in hydrogen water for one hour, the purity on the surface will decrease. The increased copper content suggests that it has an effect of suppressing copper oxidation or removing copper oxide. It can be recognized.

[0023] Utilizing these properties, the semiconductor device bonding method of the present invention uses metal (e.g., pure The conductive part (metal pad 11a) of the semiconductor chip 11, which is made of copper, is brought into contact with hydrogen water. This can reduce the proportion of oxides on the copper surface.

[0024] The following describes methods for suppressing oxidation on the surface of a semiconductor chip 11 or reducing oxides using hydrogen water. The method for joining semiconductor devices will be explained using the configuration of a semiconductor chip manufacturing apparatus 100 as an example. .

[0025] The configuration of the semiconductor chip manufacturing apparatus 100 will be described with reference to Figure 3. This is a side view showing an example of the configuration of the semiconductor chip manufacturing apparatus 100. As shown in Figure 3, semiconductor chip The wafer manufacturing apparatus 100 includes a turntable 110 for rotating the wafer 10 and a hydrogen water nozzle 121. It includes a first arm 120 attached to the frame and a second arm 130 that holds the wipe material 136. The semiconductor chip manufacturing apparatus 100 includes a bonding apparatus (not shown).

[0026] The rotating platform 110 includes, for example, a rotating disc 111, a rotating shaft 112, and a rotational drive unit 113. The rotating shaft 112 passes through the water receiver 114 located on the underside of the rotating disc 111, and its upper end is connected to the rotating disc 1 11 is attached, and a rotary drive unit 113 is attached to the lower end. Rotary disc 111 is a circular flat plate on which the diced wafer 10 is placed.

[0027] Referring to Figure 4, the wafer to be cleaned in the semiconductor device bonding method after dicing. This will be explained. Figure 4 is a plan view showing an example of a wafer 10 after dicing, which is the target of cleaning. This is a diagram. As shown in Figure 4, the wafer 10 is a disc-shaped silicon crystal and is a support material. It is attached to the upper surface of the dicing film 20. The outer edge of the dicing film 20 The upper edge is attached to ring 30. The wafer 10 is diced from above by a dicing saw. A grid-like pattern of cuts 12 is made, dividing it into multiple semiconductor chips 11.

[0028] Returning to Figure 3, the upper surface of the rotating disk 111 shows multiple semiconductors after the wafer 10 has been diced. The chip 11 is placed on the dicing film 20. The turntable 110 rotates The moving part 113 rotates the turntable 111. As a result, the turntable 110 rotates the turntable 1 The semiconductor chip 11, which is mounted on the upper surface of 11, is rotated.

[0029] The first arm 120 includes, for example, a hydrogen water nozzle 121, an ultrasonic oscillator 122, and the arm body. 123, including the XY drive unit 124. The hydrogen water nozzle 121 is located above the turntable 110. Then, hydrogen water is sprayed onto the surface of the semiconductor chip 11 placed on the upper surface of the rotating table 110. At that time, hydrogen water is sprayed onto the surface of the semiconductor chip 11 while the rotating disk 111 is rotated to clean it. You may also perform a spin cleaning.

[0030] The base end of the hydrogen water nozzle 121 is connected to a hydrogen water production device (not shown). An ultrasonic oscillator 122 for ultrasonically vibrating hydrogen water is attached to the outer circumferential surface near the lower end of the nozzle 121. It is attached. In other words, the hydrogen water nozzle 121 is ultrasonically vibrated hydrogen water. Hydrogen water containing microbubbles is sprayed onto the surface of the semiconductor chip 11. Hydrogen water nozzle 121 The main arm 61 and the XY drive unit 124 move along the surface of the semiconductor chip 11. It can move in the Y direction.

[0031] Hydrogen water is water in which hydrogen has been dissolved. Hydrogen water has a saturation level, for example, under atmospheric pressure. Hydrogen water is water in which hydrogen has been dissolved to a concentration of 60% to 100%. It can also be a mixture with added ammonia, for example, ammonia-added hydrogen water made by adding ammonia to hydrogen water. That's good too.

[0032] The second arm 130 consists of an arm body 131, an XY drive unit 132, a Z drive unit 133, and a rotary drive unit. Equipped with a moving part 134, a hydrogen water nozzle 135, a wipe material 136, a wipe material holder 137, etc. The arm body 131 is moved along the surface of the semiconductor chip 11 by the XY drive unit 132. It is movable in the XY direction. The lower end of the tip of the arm body 131 has a wipe material attached to its lower end. A wipe material holder 137 to which 136 is attached is installed. The wipe material 136 is The device captures and removes minute organic foreign matter attached to the surface of the semiconductor chip 11.

[0033] The wipe material 136 includes, for example, a sheet material capable of adsorbing foreign matter and a cushion that can be compressed and deformed. It is composed of a multilayer structure including a material. The sheet material is a fibrous material, for example, ma This is a nonwoven fabric in which microfibers are intertwined. The sheet material is not limited to fibrous materials, It may also be a thin film of a porous material. The sheet material incorporates foreign substances such as organic matter, and further The foreign material is peeled off the surface of the semiconductor chip 11 and discarded along with the cleaning solution. (Cushioning material) For example, it is a sponge made by foaming a resin material.

[0034] The tip of the arm body 131 has a base end connected to a hydrogen water tank (not shown) and a lower end A hydrogen water nozzle 135 is attached to the surface of the semiconductor chip 11, which flows hydrogen water onto it. Hydrogen water may also be hydrogen water with added ammonia, which is hydrogen water to which alkali has been added. Here, hydrogen Water with a resistivity of 0.05 to 1 MΩ·cm is also acceptable.

[0035] The upper part of the tip of the arm body 131 has a rotary drive unit (not shown) that rotates the wipe material 136. (Diagram) The wipe material holding part 137 is driven vertically to move the wipe material 136 to the semiconductor chip 11 A Z drive unit 133 is attached to the surface of the device.

[0036] Referring to Figure 5, an example of the positional relationship between the first arm 120 and the second arm 130 will be explained. To clarify, Figure 5 is a plan view showing an example of the positional relationship between the first arm 120 and the second arm 130. As shown in Figure 5, the second arm 130 swings around the rotation axis 131X. The wipe material 136 is held at the tip of the second arm 130, which is spaced apart from the rotating axis 131X. It moves back and forth between the center and the periphery of the rotating disk 111.

[0037] The first arm 120 swings around the rotation axis 123X. The hydrogen water nozzle 121, held at the tip of the first arm 120, is located in the middle of the rotating disc 111. It moves back and forth between the central part and the peripheral part. As shown in Figure 5, for example, the second arm 130 The first arm 120 moved in conjunction with the movement of the first arm 120, and the wipe material 136 moved to the center of the rotating disc 111. At the right moment, the hydrogen water nozzle 121 moves to the center of the rotating disc 111. When 1 moves to the center of the rotating disc 111, it moves within a predetermined range from the wipe material 136. Hydrogen water is sprayed. This sprays hydrogen water onto the surface of all semiconductor chips 11 on the wafer. Because it can be injected, the generation of oxides on the surface of the semiconductor chip 11 can be suppressed.

[0038] Referring to Figures 6, 7, and 8, the processing procedure for joining semiconductor devices will be explained. Figure 6 illustrates an example of the processing procedure for joining semiconductor devices according to one embodiment of the present invention. This is a flowchart. Figure 7 is a diagram illustrating the overview of the hydrogen water treatment process. Figure 8 shows the removal process. This is a diagram illustrating the general outline of the process.

[0039] In the wafer manufacturing process shown in step S101 of Figure 6, the wafer 10 is as described above. It is attached to the upper surface of the dicing film 20. The dicing film 20 is It consists of a base material and an adhesive layer covering the upper surface of the base material, and the wafer 10 is attached to the upper surface of the adhesive layer. It is attached.

[0040] In the dicing process (dicing step) shown in step S102 of Figure 6, Ha10 is diced by a dicing device (not shown). A dicing device is, The semiconductor wafer 10 attached to the dicing film 20 is cut to form a semiconductor chip 1 This is a device designated as 1. The dicing device makes cuts 12 into the wafer 10. The semiconductor chips 11 are cut into multiple pieces.

[0041] In the post-dicing washing process shown in step S103 of Figure 6, the generation generated in the dicing process Larger foreign objects are removed from the dicing process. Note that in the post-dicing washing process, hydrogen water is used, for example. It is preferable to wash using [a specific method]. Furthermore, in the post-dicing washing step, microbubbles are included. Hydrogen water may also be used.

[0042] At this time, the adhesive layer of the dicing film 20 is also cut together with the wafer 10. Dicing In the process, when making cuts 12 in the wafer 10, inorganic foreign matter such as silicon chips is removed, Organic foreign matter, such as chips, is generated in the adhesive layer 32. However, it is several microns to sub-microns. Tiny foreign matter on the order of 100m was not removed, and inorganic tiny foreign matter was found on the surface of semiconductor chip 11. It is in a state of being attached to the side surface of the semiconductor chip 11 that faces the surface or notch 12. The minute foreign matter in the system is adhering to the upper surface of the semiconductor chip 11.

[0043] Next, in the hydrogen water treatment process (hydrogen water treatment step) shown in step S201 of Figure 6 Hydrogen water is sprayed from the hydrogen water nozzle 121 onto the surface of the semiconductor chip 11. The surface is cleaned. As shown in Figure 7(a), the hydrogen water is sprayed from the hydrogen water nozzle 121. The hydrogen water (liquid, not gas) is processed by the ultrasonic oscillator 122 as it passes through the hydrogen water nozzle 121. It is ultrasonically vibrated and contains fine bubbles. Also, the rotating surface on which the semiconductor chip 11 is mounted... While rotating the disc 111, hydrogen water (a liquid, not a gas) is sprayed onto the surface of the semiconductor chip 11. Spin cleaning may be performed using hydrogen water, for example, spin cleaning with pure water. Compared to cleaning, it has the effect of suppressing oxidation of the metal pad 11a or further reducing oxides. To possess.

[0044] These tiny bubbles form on the surface and incision 1 of the semiconductor chip 11, as shown in Figure 7(b). In step 2, foaming occurs, and the impact removes fine inorganic foreign matter Pa from the surface of the semiconductor chip 11. Hydrogen water suppresses the oxidation of the metal pad 11a of the semiconductor chip 11, and the already generated hydrogen water This can reduce the amount of oxides present. Furthermore, as mentioned above, spin cleaning using hydrogen water can be implemented. By doing so, it becomes possible to remove even more oxides. Furthermore, hydrogen water is organic Because it has the property of not corroding materials, by using hydrogen water, organic matter such as daisin Inorganic foreign matter is removed without damaging the substrate 31 of the film 20. When hydrogenated water is used, it suppresses the re-adhesion of removed foreign matter to the surface of the semiconductor chip 11. This allows for a higher level of cleanliness of the semiconductor chip 11 surface after cleaning.

[0045] Furthermore, since hydrogen water does not corrode organic matter, the adhesive adhering to the upper surface of the semiconductor chip 11 Because it may not be possible to remove fine organic foreign matter such as layer chips, the hydrogen water treatment process Even after the process is complete, as shown in Figure 8(a), the upper surface of the semiconductor chip 11 has fine organic particles. Foreign matter Pa may adhere to the surface. Therefore, proceed to step S202 in Figure 6 to perform the removal process. Execute.

[0046] In the removal process (removal step) shown in step S202 of Figure 6, for example, hydrogen water While continuously flowing hydrogen water from the 135 onto the surface of the semiconductor chip 11, the rotating drive unit 13 In step 4, rotate the wipe material holder 137 attached to the tip of the second arm 130. Figure 8(b) As shown, the removal process involves the Z drive unit 133 controlled by the load adjustment unit (not shown) The wipe material 136 attached to the wipe material holder 137 is applied very lightly to the surface of the semiconductor chip 11. The device uses force to remove organic and inorganic foreign matter adhering to the surface of the semiconductor chip 11. The foreign substance Pa peels off the surface with just a very light touch using the wipe material 136 and enters the hydrogen water. It floats.

[0047] In the removal process, the wipe material holding part 137 may be rotated. The wipe material holder 137 revolves around the rotation axis 112 due to the rotation. Also, the XY drive unit 1 The arm body 131 may be moved in the XY direction by 32, or the rotation drive unit 134 may be used The pipe material holding part 137 may be made to revolve around the rotation axis 112. Also, during the removal process, The load adjustment unit (not shown) adjusts the force with which the wipe material 136 touches the surface of the semiconductor chip 11. You may perform adjustments.

[0048] As a result, the removal process removes not only inorganic foreign matter but also other substances from the surface of the semiconductor chip 11. Foreign matter in the machine system can also be effectively removed. And once the removal process is complete, organic system Minute foreign matter is removed from the surface of the semiconductor chip 11, and the surface of the semiconductor chip 11 is clean. It becomes the surface.

[0049] Furthermore, if the foreign matter Pa floating in the hydrogen water is left as is, it will form on the surface of the semiconductor chip 11. Since re-adhesion may occur, perform the hydrogen water washing step S203 in Figure 6.

[0050] In the hydrogen water cleaning process (hydrogen water cleaning step) shown in step S203 of Figure 6, for example, After the removal process, the foreign matter Pa floating in the hydrogen water is washed away with hydrogen water. At this time, spin washing Purification may be performed. This reduces oxides while suppressing the generation of oxides. This allows for more effective removal of minute inorganic foreign matter. Note that step S203 can be omitted. It can be abbreviated.

[0051] As described above, in semiconductor device bonding methods, for example, hybrid bonding is used. By bringing the metal pad 11a (for example, pure copper) of the semiconductor chip 11 into contact with hydrogen water... This can suppress oxidation of the metal pad 11a or reduce its oxide content. In this case, pure water and ozonated water are not brought into contact with the metal pad 11a. Instead of water, etc., the device may be brought into contact with hydrogen water only. Also, in semiconductor device bonding methods, Since the treatment is done with hydrogen water without the use of chemical solutions, it does not have any impact on the environment. While it is preferable to join conductive devices by contacting them only with hydrogen water, for example, At least in the processes after the hydrogen water treatment process, the water does not come into contact with pure water or ozonated water other than hydrogen water. Any processing procedure that prevents this from happening is sufficient.

[0052] In the bonding process (bonding step) shown in step S301 of Figure 6, the generation of oxides is suppressed. A metal pad 11 of a semiconductor chip 11 having a controlled, clean surface metal pad 11a a is bonded to the metal pad 11a of another semiconductor chip 11 by a bonding apparatus (not shown). The metal pad 11a of the semiconductor chip 11 is directly bonded to a predetermined metal on the substrate. It may be bonded directly to the pad.

[0053] Furthermore, in the semiconductor device bonding method, the removal process shown in step S202 of Figure 3 and After the hydrogen water washing step shown in step S203, a drying step (not shown) is performed to the semiconductor chip. You may also perform bonding after drying part 11. Although it was described as a hybrid bonding device, for example, flip-chip bonding Bonding equipment, die bonding equipment, etc., for bonding the metal pad 11a of the semiconductor chip 11. Any device that directly connects to the metal connection points of objects will suffice.

[0054] The embodiments described above are provided to facilitate understanding of the present invention and do not limit the present invention. It is not intended to be interpreted as such. Each element of the embodiment, as well as its arrangement, materials, and conditions. The shape and size are not limited to those exemplified and can be changed as appropriate. Furthermore, the configurations shown in different embodiments can be partially substituted or combined. It is Noh.

[0055] For example, the semiconductor device bonding method involves attaching the device to a dicing film 20. Not limited to the semiconductor chip 11, good semiconductor chips are selected from among multiple semiconductor chips 11. Only the top 11 is picked up and attached to the glass plate via adhesive, and multiple semiconductors are used. The chip 11 is attached and the glass plate is placed on the rotating base 110 and the semiconductor chip 11 It can also be applied when cleaning the surface. In this case, the glass plate constitutes the support material. In addition, the semiconductor chip 11 is placed on a silicon wafer or substrate instead of a glass plate. After attaching, the silicon wafer or substrate is placed on the rotating table 110 and the semiconductor chip 11 is washed. Purification may be performed. In that case, the silicon wafer and substrate constitute the support material.

[0056] For example, in the semiconductor device bonding method described above, the hydrogen water treatment process, removal A drying process is carried out after each of the processes and the hydrogen water washing process to clean the surface of the semiconductor chip 11. It may be dried. A semiconductor chip 11 with a higher degree of cleanliness can be bonded. ru.

[0057] [Note 1] The semiconductor device bonding method uses hydrogen water to bond multiple semiconductor chips 11 (semiconductor device Hydrogen water treatment to suppress oxidation or reduce oxides of the metal pad 11a (conductive part) of (S) A hydrogen water treatment process to be executed (hydrogen water treatment step), and multiple semiconductor chips 11 (semiconductor chips A joining process (joining step) in which each of the vices is joined to each other, and hydrogen water treatment is performed. A joining process in which opposing surfaces of the metal pad 11a (conductive part) are directly joined together (joining This includes the step of guiding the surface of the semiconductor chip 11, which is a semiconductor device. To provide a bonding method that can suppress oxidation of the metal pad 11a, which is the electrical component, or reduce oxide formation. It is possible.

[0058] [Note 2] In the semiconductor device bonding method described in Appendix 1 above, the semiconductor device is a semiconductor EHA is a chip-shaped semiconductor chip 11 that has been diced, and hydrogen water treatment process (hydrogen water treatment Before the processing step, the wafer 10 (semiconductor wafer) is diced to form the semiconductor chip 11. This further includes the dicing process (dicing step) to create the metal (for example) The metal pad 11a of the semiconductor chip 11, which is made of pure copper, is brought into contact with hydrogen water. This makes it possible to suppress the generation of oxides.

[0059] [Note 3] In the above appendix 1 or 2, the method for joining semiconductor devices is a hydrogen water treatment step (hydrogen water treatment In the following steps, ultrasonically vibrated hydrogen water is used to create a semiconductor chip 11 (semiconductor data The oxide of the metal pad 11a (conductive part) of the vice is reduced, and the semiconductor chip The surface of chip 11 (semiconductor device) is washed. This removes the metal from the semiconductor chip 11. This suppresses oxidation of pad 11a and reduces oxides that have already formed.

[0060] [Note 4] In any one of the above appendices 1 to 3, the method for joining semiconductor devices is hydrogen water treatment. Between the process (hydrogen water treatment step) and the bonding process (bonding step), the semiconductor chip While spraying hydrogen water onto semiconductor chip 11 (semiconductor device) A removal step (removal step) involves bringing a wipe material 36 containing hydrogen water into contact with the surface to remove foreign matter. This further includes (p). This removes inorganic substances from the surface of the semiconductor chip 11 by the removal process. It can effectively remove not only foreign matter but also organic foreign matter, and the surface of the semiconductor chip 11 It can be made into a clean surface.

[0061] [Note 5] In the above appendix 4, the semiconductor device bonding method is as follows: after the removal process (removal step) , a hydrogen water cleaning process in which the surface of the semiconductor chip 11 (semiconductor device) is washed using hydrogen water. (Hydrogen water washing step) is further included. This reduces oxides while preventing the generation of oxides. This method allows for more effective removal of minute inorganic foreign substances while suppressing their growth.

[0062] [Note 6] In the above appendix 5, the method for joining semiconductor devices is a hydrogen water cleaning step (hydrogen water cleaning step In the (app), ultrasonically vibrated hydrogen water is used to create a semiconductor chip 11 (semiconductor device). Wash the surface. This further reduces oxides and suppresses the generation of oxides. This allows for more effective removal of minute inorganic foreign matter.

[0063] [Note 7] In any one of the above appendices 1 to 6, the method for joining semiconductor devices is hydrogen water treatment. The hydrogen water injected in the process (hydrogen water treatment step) is subject to the saturation level of hydrogen gas under atmospheric pressure. This is 60% to 100%. As a result, the surface of the semiconductor chip 11, which is a semiconductor device. This makes it possible to suppress oxidation of the metal pad 11a, which is the conductive part, or to reduce the amount of oxides. [Explanation of symbols]

[0064] 10...wafer, 11...semiconductor chip, 12...cut, 20...dicing film, 30 ...ring, 110...rotating base, 111...rotating disc, 112...rotating shaft, 113...rotating drive unit, 1 14...Water receiver, 120...First arm, 121...Hydrogen water nozzle, 122...Ultrasonic oscillator, 1 23...Arm body, 124...XY drive unit, 130...Second arm, 131...Arm body, 1 32...XY drive unit, 133...Z drive unit, 134...Rotation drive unit, 135...Hydrogen water nozzle, 1 36... Wipe material, 137... Wipe material holder, 100... Semiconductor chip manufacturing equipment.

Claims

1. Hydrogen water is used to suppress oxidation or reduce oxides in the conductive parts of multiple semiconductor devices. A hydrogen water treatment step in which plain water treatment is performed, A bonding step in which each of the plurality of semiconductor devices is joined to each other, wherein the hydrogen water A joining step in which opposing surfaces of the conductive portion that have been processed are directly joined together, A method for joining semiconductor devices, including those mentioned above.

2. The aforementioned semiconductor device is a chip-shaped semiconductor chip obtained by dicing a semiconductor wafer. the law of nature, Prior to the hydrogen water treatment step, the semiconductor wafer is diced to create the semiconductor chip The method of joining semiconductor devices according to claim 1, further comprising a dicing step to create Law.

3. In the hydrogen water treatment step, the ultrasonically vibrated hydrogen water is used to the semiconductor device To reduce oxides in the conductive parts of the chair and to wash away the surface of the semiconductor device, A method for joining semiconductor devices according to claim 1.

4. Between the hydrogen water treatment step and the bonding step, water is applied to the semiconductor device. While spraying plain water, a wipe material containing hydrogen water is brought into contact with the surface of the semiconductor device. Further including a removal step to remove foreign matter, A method for joining semiconductor devices according to claim 1.

5. After the removal step, hydrogen water is used to wash the surface of the semiconductor device. Further including a washing step, A method for joining semiconductor devices according to claim 4.

6. In the hydrogen water cleaning step, the ultrasonically vibrated hydrogen water is used to clean the semiconductor device Rinse the surface of the stool. A method for joining semiconductor devices according to claim 5.

7. The hydrogen water injected in the hydrogen water treatment step has a hydrogen gas saturation level under atmospheric pressure. It is between 60% and 100%. A method for joining semiconductor devices according to any one of claims 1 to 6.

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