Light-emitting element

Abstract

To provide a light-emitting element that can improve the bias in the light emission intensity distribution. [Solution] The light-emitting element comprises a semiconductor structure having an insulating layer with multiple through holes, a p-type semiconductor layer, an emissive layer, and an n-type semiconductor layer, an n-electrode, a conductive member disposed inside the multiple through holes, and a p-electrode. The multiple through holes consist of multiple first and second through holes. The multiple first through holes are disposed between the n-electrode and the p-electrode. The multiple second through holes are disposed between the multiple first through holes and the p-electrode. The conductive member has a first conductive part containing a first conductive material and a second conductive part containing a second conductive material. The contact resistance of the second conductive material to the p-type semiconductor layer is lower than the contact resistance of the first conductive material to the p-type semiconductor layer. The first conductive part is in contact with the p-type semiconductor layer at a position that overlaps with the multiple first through holes in a top view. The second conductive part is in contact with the p-type semiconductor layer at a position that overlaps with the multiple second through holes in a top view.

Description

Technical Field

[0001] The embodiments relate to a light-emitting element.

Background Art

[0002] In a light-emitting element, there may be a bias in the light-emitting intensity distribution such that the light-emitting intensity near the p electrode is lower than the light-emitting intensity near the n electrode. In a light-emitting element, it is required to improve the bias in the light-emitting intensity distribution.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the embodiments is to provide a light-emitting element capable of improving the bias in the light-emitting intensity distribution.

Means for Solving the Problems

[0005] A light-emitting element according to one embodiment of the present invention comprises an insulating layer, a semiconductor structure, an n-electrode, a conductive member, and a p-electrode. The insulating layer has a plurality of through holes. The semiconductor structure has a p-type semiconductor layer, an emissive layer, and an n-type semiconductor layer. The p-type semiconductor layer is disposed on the insulating layer. The emissive layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the emissive layer. The n-electrode is disposed on the n-type semiconductor layer. The n-electrode is electrically connected to the n-type semiconductor layer. The conductive member is disposed inside the plurality of through holes. The conductive member is in contact with the p-type semiconductor layer. The p-electrode is electrically connected to the conductive member. The plurality of through holes comprises a plurality of first through holes and a plurality of second through holes. The plurality of first through holes are located between the n-electrode and the p-electrode in a top view. The plurality of second through holes are located between the plurality of first through holes and the p-electrode in a top view. The conductive member comprises a first conductive portion and a second conductive portion. The first conductive portion includes a first conductive material. The second conductive portion includes a second conductive material. The contact resistance of the second conductive material to the p-type semiconductor layer is lower than the contact resistance of the first conductive material to the p-type semiconductor layer. The first conductive portion contacts the p-type semiconductor layer at a position that overlaps with the plurality of first through holes in a top view. The second conductive portion contacts the p-type semiconductor layer at a position that overlaps with the plurality of second through holes in a top view. [Effects of the Invention]

[0006] According to one embodiment of the present invention, a light-emitting element that can improve the bias in the light emission intensity distribution can be realized. [Brief explanation of the drawing]

[0007] [Figure 1] This is a top view showing a light-emitting element according to the first embodiment. [Figure 2] This is a cross-sectional view of the light-emitting element at the position of line II-II shown in Figure 1. [Figure 3] This is a top view showing a light-emitting element according to a first modification of the first embodiment. [Figure 4] Figure 3 is a cross-sectional view showing a light-emitting element at the position of the IV-IV line. [Figure 5] This is a top view showing a light-emitting element according to a second modification of the first embodiment. [Figure 6] Figure 5 is a cross-sectional view showing the light-emitting element at the position of the VI-VI line. [Figure 7] This is a top view showing a light-emitting element according to the second embodiment. [Figure 8] This is a top view showing a light-emitting element according to the third embodiment. [Figure 9] This is a top view showing a light-emitting element according to the fourth embodiment. [Figure 10] This is a top view showing a light-emitting element according to the fifth embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and the figures, elements similar to those already described are denoted by the same reference numerals, and detailed explanations are omitted as appropriate. In addition, in some cases, end views showing only the cross-section are shown as cross-sectional views.

[0009] Furthermore, in order to make the explanation easier to understand, the arrangement and configuration of each part will be described using the XYZ Cartesian coordinate system. The X, Y, and Z axes are mutually orthogonal. The direction in which the X axis extends will be called the "X direction," the direction in which the Y axis extends will be called the "Y direction," and the direction in which the Z axis extends will be called the "Z direction." Also, in order to make the explanation easier to understand, the direction of the arrow in the Z direction will be considered upward, and the opposite direction will be considered downward, but these directions are unrelated to the direction of gravity. Viewing from above downwards will be called a "top view."

[0010] <First Embodiment> Figure 1 is a top view showing a light-emitting element according to the first embodiment. Figure 2 is a cross-sectional view of the light-emitting element at the position indicated by line II-II in Figure 1. As shown in Figures 1 and 2, the light-emitting element 100 according to the embodiment comprises an insulating layer 10, a semiconductor structure 20, an n electrode 30, a conductive member 40, and a p electrode 50.

[0011] (Insulating layer) The insulating layer 10 is placed on the conductive member 40. The insulating layer 10 is in contact with the conductive member 40. The thickness of the insulating layer 10 is, for example, 100 nm to 300 nm. The upper and lower surfaces of the insulating layer 10 are planes that are generally parallel to the XY plane.

[0012] The insulating layer 10 has a plurality of through holes 11. The plurality of through holes 11 consist of a plurality of first through holes 11a and a plurality of second through holes 11b. In Figure 1, the plurality of first through holes 11a and the plurality of second through holes 11b are each enclosed by dashed lines. The plurality of first through holes 11a and the plurality of second through holes 11b penetrate the insulating layer 10 in the Z direction. Parts of the conductive member 40 are arranged inside the plurality of first through holes 11a and the plurality of second through holes 11b.

[0013] The multiple first through-holes 11a are located between the n electrode 30 and the p electrode 50 in a top view. The multiple second through-holes 11b are located between the multiple first through-holes 11a and the p electrode 50 in a top view. In other words, the multiple first through-holes 11a are located closer to the n electrode 30 than the multiple second through-holes 11b between the n electrode 30 and the p electrode 50. The multiple second through-holes 11b are located closer to the p electrode 50 (further away from the n electrode 30) than the multiple first through-holes 11a between the n electrode 30 and the p electrode 50.

[0014] The plurality of first through-holes 11a are arranged, for example, around the n electrode 30. The plurality of first through-holes 11a are arranged, for example, around the pad portion 31 and the extending portion 32 of the n electrode 30 described later. In the light-emitting element 100, some of the plurality of first through-holes 11a are arranged along the X direction, and some of the other plurality of first through-holes 11a are arranged along the Y direction. The plurality of second through-holes 11b are arranged, for example, around the p electrode 50. In the light-emitting element 100, some of the plurality of second through-holes 11b are arranged along the X direction, and some of the other plurality of second through-holes 11b are arranged along the Y direction.

[0015] The insulating layer 10 contains an insulating material. The insulating layer 10 contains, for example, silicon dioxide. The insulating layer 10 may contain, for example, at least any one of silicon nitride and silicon oxynitride.

[0016] (Semiconductor structure) The semiconductor structure 20 is arranged on the insulating layer 10. The semiconductor structure 20 is in contact with the insulating layer 10. The semiconductor structure 20 has a p-type semiconductor layer 21, a light-emitting layer 22, and an n-type semiconductor layer 23. The light-emitting layer 22 is located between the p-type semiconductor layer 21 and the n-type semiconductor layer 23. The n-type semiconductor layer 23 includes a first n-type semiconductor layer 23a and a second n-type semiconductor layer 23b partially arranged on the first n-type semiconductor layer 23a. The p-type semiconductor layer 21 is arranged on the insulating layer 10. The p-type semiconductor layer 21 is in contact with the insulating layer 10. The light-emitting layer 22 is arranged on the p-type semiconductor layer 21. The light-emitting layer 22 is in contact with the p-type semiconductor layer 21 and the first n-type semiconductor layer 23a of the n-type semiconductor layer 23. The n-type semiconductor layer 23 is arranged on the light-emitting layer 22. The upper and lower surfaces of the p-type semiconductor layer 21, the light-emitting layer 22, and the n-type semiconductor layer 23 are respectively planes generally parallel to the X-Y plane.

[0017] The semiconductor structure 20 emits, for example, red light. In this case, the p-type semiconductor layer 21 includes, for example, GaP (gallium phosphide). The light-emitting layer 22 includes, for example, AlGaInP (aluminum indium gallium phosphide) and GaInP (gallium indium phosphide). The first n-type semiconductor layer 23a of the n-type semiconductor layer 23 includes, for example, AlGaInP. The second n-type semiconductor layer 23b of the n-type semiconductor layer 23 includes, for example, GaAs (gallium arsenide). The p-type semiconductor layer 21, the light-emitting layer 22, and the n-type semiconductor layer 23 are not limited to these and may be combinations of other semiconductor layers that emit red light. The peak wavelength of the light emitted by the light-emitting layer 22 is, for example, 620 nm to 700 nm.

[0018] Since the bandgap energy of the second type n semiconductor layer 23b is smaller than that of the first type n semiconductor layer 23a, the second type n semiconductor layer 23b absorbs light emitted by the light-emitting layer 22 more easily than the first type n semiconductor layer 23a. By partially arranging the second type n semiconductor layer 23b on the first type n semiconductor layer 23a, light absorption by the second type n semiconductor layer 23b can be reduced. Considering the light absorption by the second type n semiconductor layer 23b, it is preferable that the thickness of the second type n semiconductor layer 23b be thinner than the thickness of the first type n semiconductor layer 23a. For example, the thickness of the first type n semiconductor layer 23a is 2 μm or more and 4 μm or less, and the thickness of the second type n semiconductor layer 23b is 0.05 μm or more and 0.5 μm or less.

[0019] (n electrode) The n-electrode 30 is placed on the n-type semiconductor layer 23. The n-electrode 30 is in contact with the n-type semiconductor layer 23. The n-electrode 30 is electrically connected to the n-type semiconductor layer 23. The upper and lower surfaces of the n-electrode 30 are planes that are approximately parallel to the XY plane.

[0020] Furthermore, the n electrode 30 has a pad portion 31 and an extended portion 32. The shape of the pad portion 31 in a top view is, for example, circular. The extended portion 32 extends from the pad portion 31 in a top view.

[0021] The n electrode 30 contains a conductive material such as a metal. For example, the n electrode 30 can be made of Au (gold), Ag (silver), Pt (platinum), Ti (titanium), Ni (nickel), Ge (germanium), Rh (rhodium), or Ru (ruthenium).

[0022] (Conductive material) A portion of the conductive member 40 is located beneath the insulating layer 10. Another portion of the conductive member 40 is located inside the multiple through holes 11. The conductive member 40 is in contact with the p-type semiconductor layer 21. The shape of the conductive member 40 in a top view is, for example, rectangular. The upper and lower surfaces of the portion of the conductive member 40 located beneath the insulating layer 10 are planes that are generally parallel to the XY plane.

[0023] The conductive member 40 has a first conductive portion 41 and a second conductive portion 42. The first conductive portion 41 is electrically connected to the p-type semiconductor layer 21 and the p-electrode 50. The first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position that overlaps with a plurality of first through-holes 11a in a top view. The second conductive portion 42 is electrically connected to the p-type semiconductor layer 21 and the first conductive portion 41. The second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position that overlaps with a plurality of second through-holes 11b in a top view. The thickness of the first conductive portion 41 is, for example, 10 nm to 500 nm. The thickness of the second conductive portion 42 is, for example, 1 nm to 500 nm.

[0024] In the light-emitting element 100, the first conductive portion 41 has a first portion 41a, a second portion 41b, and a third portion 41c. The first portion 41a is located below the insulating layer 10. The first portion 41a is in contact with the insulating layer 10. The second portion 41b is located inside a plurality of first through holes 11a. The second portion 41b is in contact with the insulating layer 10 and the p-type semiconductor layer 21. The second portion 41b is connected to the first portion 41a. The third portion 41c is located inside a plurality of second through holes 11b. The third portion 41c is in contact with the insulating layer 10 and the second conductive portion 42. The third portion 41c is not in contact with the p-type semiconductor layer 21. The third portion 41c is connected to the first portion 41a.

[0025] In the light-emitting element 100, the second conductive portion 42 is located inside the plurality of second through holes 11b and is positioned above the first conductive portion 41 (third portion 41c). The second conductive portion 42 is positioned between the first conductive portion 41 (third portion 41c) and the p-type semiconductor layer 21. The second conductive portion 42 is in contact with the first conductive portion 41 (third portion 41c) and the p-type semiconductor layer 21. The second conductive portion 42 is not located inside the plurality of first through holes 11a. The second conductive portion 42 is not located below the insulating layer 10.

[0026] The first conductive part 41 includes a first conductive material. The first conductive material includes, for example, at least one of indium tin oxide (ITO), indium zinc oxide, gallium zinc oxide, and aluminum zinc oxide. The first conductive material includes, for example, indium tin oxide.

[0027] The second conductive portion 42 includes a second conductive material. The second conductive material includes, for example, at least one of Au, Ag, Cu (copper), Al (aluminum), Rh, and Ru. The second conductive material includes, for example, Au.

[0028] The contact resistance of the second conductive material to the p-type semiconductor layer 21 is lower than the contact resistance of the first conductive material to the p-type semiconductor layer 21.

[0029] (p electrode) The p electrode 50 is electrically connected to the conductive member 40. The upper and lower surfaces of the p electrode 50 are planes that are approximately parallel to the XY plane.

[0030] The p electrode 50 contains a conductive material such as a metal. For example, the p electrode 50 contains at least one of Au, Ag, Pt, Ti, Ni, Ge, Rh, and Ru.

[0031] When a voltage is applied between the n electrode 30 and the p electrode 50, the light-emitting layer 22 emits light. This allows the light-emitting element 100 to emit light.

[0032] The light-emitting element 100 further comprises a metal member 60, a substrate 70, and a protective film 80. The metal member 60, the substrate 70, and the protective film 80 may be omitted.

[0033] (Metal components) The metal member 60 is positioned beneath the conductive member 40 and the p electrode 50. The metal member 60 is in contact with the conductive member 40 and the p electrode 50. The metal member 60 is electrically connected to the conductive member 40 and the p electrode 50. The conductive member 40 is electrically connected to the p electrode 50 via the metal member 60. The shape of the metal member 60 in top view is, for example, rectangular. The top and bottom surfaces of the metal member 60 are planes that are generally parallel to the XY plane. In the Z direction, the metal member 60 is located between the substrate 70 and the conductive member 40. The metal member 60 joins the substrate 70 and the conductive member 40. The metal member 60 contains, for example, gold. The thickness of the metal member 60 is, for example, 1 μm or more and 500 μm or less.

[0034] (substrate) The substrate 70 is placed beneath the metal member 60. The shape of the substrate 70 when viewed from above is, for example, rectangular. The substrate 70 contains, for example, at least one of Si (silicon) and AlN (aluminum nitride). The substrate 70 may also contain, for example, sapphire. If the shape of the substrate 70 when viewed from above is rectangular, the length of one side is, for example, 200 μm or more and 1000 μm or less. The top and bottom surfaces of the substrate 70 are planes that are generally parallel to the XY plane. The thickness of the substrate 70 is, for example, 100 μm or more and 500 μm or less.

[0035] (protective film) The protective film 80 is disposed on the insulating layer 10, the semiconductor structure 20, the n electrode 30, the conductive member 40, the p electrode 50, and the metal member 60. The protective film 80 has an opening located on a portion of the n electrode 30 and an opening located on a portion of the p electrode 50. The protective film 80 includes, for example, at least one of silicon dioxide, silicon nitride, or silicon oxynitride. The thickness of the protective film 80 is, for example, 10 nm to 500 nm.

[0036] Thus, in the light-emitting element 100, the first conductive portion 41 contacts the p-type semiconductor layer 21 at a position overlapping with a plurality of first through-holes 11a located near the n electrode 30 between the n electrode 30 and the p electrode 50, and the second conductive portion 42 contacts the p-type semiconductor layer 21 at a position overlapping with a plurality of second through-holes 11b located near the p electrode 50 between the n electrode 30 and the p electrode 50. Furthermore, the contact resistance of the second conductive material contained in the second conductive portion 42 to the p-type semiconductor layer 21 is lower than the contact resistance of the first conductive material contained in the first conductive portion 41 to the p-type semiconductor layer 21. As a result, the current density can be increased in the region of the p-type semiconductor layer 21 located near the p electrode 50, where current is less likely to flow than near the n electrode 30 when viewed from above. Therefore, the bias in the current density distribution can be improved, and the light emission intensity distribution can be improved. Furthermore, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at positions overlapping with multiple second through-holes 11b, but not at positions overlapping with multiple first through-holes 11a. As a result, the contact area between the second conductive portion 42 and the p-type semiconductor layer 21 does not become too large, thereby reducing the likelihood of the second conductive portion 42 reacting with the p-type semiconductor layer 21 and altering a portion of the second conductive portion 42.

[0037] In the light-emitting element 100, the multiple through holes 11 further include a plurality of third through holes 11c and a plurality of fourth through holes 11d. In Figure 1, the plurality of third through holes 11c and the plurality of fourth through holes 11d are each enclosed by dashed lines. The plurality of third through holes 11c and the plurality of fourth through holes 11d penetrate the insulating layer 10 in the Z direction. Parts of the conductive member 40 are arranged inside the plurality of third through holes 11c and the plurality of fourth through holes 11d. The plurality of third through holes 11c and the plurality of fourth through holes 11d may be omitted.

[0038] The multiple third through-holes 11c and the multiple fourth through-holes 11d are not located between the n electrode 30 and the p electrode 50 in a top view. At least one of the multiple fourth through-holes 11d is located between the n electrode 30 and the multiple third through-holes 11c in a top view. In other words, the multiple third through-holes 11c are located at a position that is not between the n electrode 30 and the p electrode 50, and are further from the n electrode 30 than the fourth through-holes 11d. The multiple fourth through-holes 11d are located at a position that is not between the n electrode 30 and the p electrode 50, and are closer to the n electrode 30 than the third through-holes 11c.

[0039] Multiple third through-holes 11c are arranged, for example, along the outer circumference of the semiconductor structure 20. In the light-emitting element 100, some of the multiple third through-holes 11c are arranged along the X direction, and other parts of the multiple third through-holes 11c are arranged along the Y direction. Multiple fourth through-holes 11d are arranged, for example, along the extended portion 32 of the n electrode 30. In the light-emitting element 100, some of the multiple fourth through-holes 11d are arranged along the X direction, and other parts of the multiple fourth through-holes 11d are arranged along the Y direction.

[0040] In the light-emitting element 100, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position that overlaps with a plurality of third through-holes 11c when viewed from above. In the light-emitting element 100, the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position that overlaps with a plurality of fourth through-holes 11d when viewed from above.

[0041] Thus, in the light-emitting element 100, the first conductive portion 41 contacts the p-type semiconductor layer 21 at a position that overlaps with a plurality of fourth through-holes 11d located near the n electrode 30, but not between the n electrode 30 and the p electrode 50. Also, the second conductive portion 42 contacts the p-type semiconductor layer 21 at a position that overlaps with a plurality of third through-holes 11c located near the outer periphery of the semiconductor structure 20, but not between the n electrode 30 and the p electrode 50. Furthermore, the contact resistance of the second conductive material contained in the second conductive portion 42 to the p-type semiconductor layer 21 is lower than the contact resistance of the first conductive material contained in the first conductive portion 41 to the p-type semiconductor layer 21. As a result, the current density can be increased in the region of the p-type semiconductor layer 21 located near the outer periphery of the semiconductor structure 20, where current is less likely to flow when viewed from above than near the n electrode 30. Therefore, the bias in the current density distribution can be improved, and the light emission intensity distribution can be improved. Furthermore, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at positions overlapping with multiple third through holes 11c, but is not in contact with the p-type semiconductor layer 21 at positions overlapping with multiple fourth through holes 11d. As a result, the contact area between the second conductive portion 42 and the p-type semiconductor layer 21 does not become too large, thereby reducing the likelihood of the second conductive portion 42 reacting with the p-type semiconductor layer 21 and altering a portion of the second conductive portion 42.

[0042] In the light-emitting element 100, the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 is smaller than the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21 (S2 < S1). In the light-emitting element 100, the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position overlapping with the plurality of first through-holes 11a and the plurality of fourth through-holes 11d in a top view. From this, in the light-emitting element 100, the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21 is calculated as the total value of the contact area S11 between the first conductive portion 41 and the p-type semiconductor layer 21 at a position overlapping with the plurality of first through-holes 11a in a top view and the contact area S14 between the first conductive portion 41 and the p-type semiconductor layer 21 at a position overlapping with the plurality of fourth through-holes 11d in a top view (S1 = S11 + S14). Also, in the light-emitting element 100, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position overlapping with the plurality of second through-holes 11b and the plurality of third through-holes 11c in a top view. From this, in the light-emitting element 100, the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 is calculated as the total value of the contact area S21 between the second conductive portion 42 and the p-type semiconductor layer 21 at a position overlapping with the plurality of second through-holes 11b in a top view and the contact area S23 between the second conductive portion 42 and the p-type semiconductor layer 21 at a position overlapping with the plurality of third through-holes 11c in a top view (S2 = S21 + S23).

[0043] Thus, by making the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21, it is possible to reduce the reaction between the second conductive portion 42 and the p-type semiconductor layer 21 and the alteration of a part of the second conductive portion 42.

[0044] For example, by adjusting the number of the plurality of through-holes 11, the diameter of the plurality of through-holes 11 in a top view, the maximum interval between two adjacent through-holes 11, etc., the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 can be made smaller than the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21.

[0045] The light-emitting element 100 has 15 first through holes 11a, 9 second through holes 11b, 8 third through holes 11c, and 14 fourth through holes 11d. The number of multiple second through holes 11b is less than the number of multiple first through holes 11a. Also, the sum of the number of multiple second through holes 11b and the number of multiple third through holes 11c (17) is less than the sum of the number of multiple first through holes 11a and the number of multiple fourth through holes 11d (29).

[0046] In this way, by making the number of multiple second through-holes 11b less than the number of multiple first through-holes 11a, it is easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21.

[0047] In the light-emitting element 100, the diameter R1 of each of the multiple first through holes 11a in a top view is the same as the diameter R4 of each of the multiple fourth through holes 11d in a top view. The diameter R2 of each of the multiple second through holes 11b in a top view is the same as the diameter R3 of each of the multiple third through holes 11c in a top view. Diameters R1 and R4 are smaller than diameters R2 and R3.

[0048] In the light-emitting element 100, in a top view, the first maximum spacing P1 between two adjacent first through-holes 11a is the same as the second maximum spacing P2 between two adjacent second through-holes 11b. In a top view, the third maximum spacing P3 between two adjacent third through-holes 11c is the same as the fourth maximum spacing P4 between two adjacent fourth through-holes 11d. The first maximum spacing P1 and the second maximum spacing P2 are shorter than the third maximum spacing P3 and the fourth maximum spacing P4.

[0049] The first maximum spacing P1 is the maximum spacing between two adjacent first through holes 11a. The second maximum spacing P2 is the maximum spacing between two adjacent second through holes 11b. The third maximum spacing P3 is the maximum spacing between two adjacent third through holes 11c. The fourth maximum spacing P4 is the maximum spacing between two adjacent fourth through holes 11d.

[0050] In the light-emitting element 100, the spacing between two adjacent first through holes 11a, the spacing between two adjacent second through holes 11b, the spacing between two adjacent third through holes 11c, and the spacing between two adjacent fourth through holes 11d are not the same. The spacing between two adjacent first through holes 11a, the spacing between two adjacent second through holes 11b, the spacing between two adjacent third through holes 11c, and the spacing between two adjacent fourth through holes 11d may be the same.

[0051] (First embodiment, first modified example) Figure 3 is a top view showing a light-emitting element according to a first modification of the first embodiment. Figure 4 is a cross-sectional view showing the light-emitting element at the position of the IV-IV line shown in Figure 3. As shown in Figures 3 and 4, the light-emitting element 100A according to the first modified example of the first embodiment is substantially the same as the light-emitting element 100, except that the structure of the first conductive part 41 is different.

[0052] In the light-emitting element 100A, the first conductive part 41 has a conductive through-hole 41h. As shown in Figure 4, the conductive through-hole 41h overlaps with one of the multiple second through-holes 11b in the Z direction. That is, the conductive through-hole 41h is located in the third part 41c of the first conductive part 41. The number of conductive through-holes 41h may be one or two or more. The conductive through-holes 41h may be located at positions corresponding to each of the multiple second through-holes 11b. The metal member 60 is in contact with the second conductive part 42 at a position that overlaps with the conductive through-hole 41h in a top view. Note that the conductive through-hole 41h may, for example, overlap with one of the multiple third through-holes 11c in a top view. In Figure 3, the conductive through-hole 41h is located in the second through-hole 11b and the third through-hole 11c, respectively. Furthermore, the conductive through-holes 41h do not need to be located in all of the second through-holes 11b and third through-holes 11c. In other words, the conductive through-holes 41h do not need to be located in some of the second through-holes 11b. Also, the conductive through-holes 41h do not need to be located in some of the third through-holes 11c.

[0053] In this way, by having the metal member 60 in contact with the second conductive part 42 at a position that overlaps with the conductive part through hole 41h when viewed from above, the adhesion between the metal member 60 and the conductive part 40 can be improved compared to the case where the metal member 60 does not come into contact with the second conductive part 42. For example, if the materials of the metal member 60 and the second conductive part 42 are the same, the adhesion between the metal member 60 and the second conductive part 42 can be further improved.

[0054] (Second modified example of the first embodiment) Figure 5 is a top view showing a light-emitting element according to a second modification of the first embodiment. Figure 6 is a cross-sectional view showing the light-emitting element at the position of the VI-VI line shown in Figure 5. As shown in Figures 5 and 6, the light-emitting element 100B according to the second modification of the first embodiment is substantially the same as the light-emitting element 100, except that the structures of the first conductive part 41 and the second conductive part 42 are different.

[0055] In the light-emitting element 100B, the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position that overlaps with the multiple second through-holes 11b when viewed from above. In the light-emitting element 100B, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position that overlaps with the center of the second through-holes 11b when viewed from above (central portion), and the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position that does not overlap with the center of the second through-holes 11b when viewed from above (outer peripheral portion surrounding the central portion). For example, the second conductive portion 42 may be in contact with the p-type semiconductor layer 21 at a position that does not overlap with the center of the second through-holes 11b when viewed from above (outer peripheral portion), and the first conductive portion 41 may be in contact with the p-type semiconductor layer 21 at a position that overlaps with the center of the second through-holes 11b when viewed from above (central portion).

[0056] In this way, by having the first conductive portion 41 in contact with the p-type semiconductor layer 21 at a position where it overlaps with the multiple second through-holes 11b when viewed from above, it is possible to improve the light emission intensity distribution while reducing the likelihood of the contact area between the second conductive portion 42 and the p-type semiconductor layer 21 becoming too large.

[0057] <Second Embodiment> Figure 7 is a top view showing a light-emitting element according to the second embodiment. As shown in Figure 7, the light-emitting element 200 according to the second embodiment is substantially the same as the light-emitting element 100, except that the structure of the plurality of second through holes 11b and the plurality of third through holes 11c is different.

[0058] Even in the light-emitting element 200, the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 is smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21 (S2 <S1)。

[0059] The number of multiple first through-holes 11a, multiple second through-holes 11b, multiple third through-holes 11c, and multiple fourth through-holes 11d in the light-emitting element 200 is the same as the number of multiple first through-holes 11a, multiple second through-holes 11b, multiple third through-holes 11c, and multiple fourth through-holes 11d in the light-emitting element 100. In other words, in the light-emitting element 200, as in the light-emitting element 100, the number of multiple second through-holes 11b is less than the number of multiple first through-holes 11a. Also, the sum of the number of multiple second through-holes 11b and the number of multiple third through-holes 11c (17) is less than the sum of the number of multiple first through-holes 11a and the number of multiple fourth through-holes 11d (29). This makes it easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21.

[0060] Furthermore, the first maximum spacing P1, second maximum spacing P2, third maximum spacing P3, and fourth maximum spacing P4 of the light-emitting element 200 are the same as the first maximum spacing P1, second maximum spacing P2, third maximum spacing P3, and fourth maximum spacing P4 of the light-emitting element 100.

[0061] In the light-emitting element 200, diameter R1 is the same as diameter R4. Diameter R2 is the same as diameter R3. Diameters R2 and R3 are smaller than diameters R1 and R4.

[0062] In this way, by making diameter R2 smaller than diameter R1, it is easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21. Also, by making diameters R2 and R3 smaller than diameters R1 and R4, it is easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21.

[0063] <Third Embodiment> Figure 8 is a top view showing a light-emitting element according to the third embodiment. As shown in Figure 8, the light-emitting element 300 according to the third embodiment is substantially the same as the light-emitting element 100, except that the structure of the multiple second through-holes 11b and the multiple third through-holes 11c is different.

[0064] Even in the light-emitting element 300, the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 is smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21 (S2 <S1)。

[0065] The light-emitting element 300 has 15 first through holes 11a, 4 second through holes 11b, 4 third through holes 11c, and 14 fourth through holes 11d. The number of multiple second through holes 11b is less than the number of multiple first through holes 11a. Also, the sum of the number of multiple second through holes 11b and the number of multiple third through holes 11c (8) is less than the sum of the number of multiple first through holes 11a and the number of multiple fourth through holes 11d (29). This makes it easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21.

[0066] Furthermore, the diameters R1, R2, R3, and R4 of the light-emitting element 300 are the same as the diameters R1, R2, R3, and R4 of the light-emitting element 100.

[0067] In the light-emitting element 300, the first maximum spacing P1 is shorter than the second maximum spacing P2. The fourth maximum spacing P4 is shorter than the third maximum spacing P3. The first maximum spacing P1 is shorter than the fourth maximum spacing P4. The second maximum spacing P2 is shorter than the third maximum spacing P3. The fourth maximum spacing P4 is shorter than the second maximum spacing P2.

[0068] In this way, by making the first maximum spacing P1 shorter than the second maximum spacing P2, it is easier to make the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21.

[0069] <Fourth Embodiment> Figure 9 is a top view showing a light-emitting element according to the fourth embodiment. As shown in Figure 9, the light-emitting element 400 according to the fourth embodiment is substantially the same as the light-emitting element 100, except that the structure of the multiple second through-holes 11b and the multiple third through-holes 11c is different.

[0070] Even in the light-emitting element 400, the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 is smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21 (S2 <S1)。

[0071] In the light-emitting element 400, the multiple second through-holes 11b include a central second through-hole 11b1, an intermediate second through-hole 11b2, and an outer peripheral second through-hole 11b3. The distance between the central second through-hole 11b1 and the n electrode 30 is shorter than the distance between the intermediate second through-hole 11b2 and the n electrode 30. The distance between the intermediate second through-hole 11b2 and the n electrode 30 is shorter than the distance between the outer peripheral second through-hole 11b3 and the n electrode 30. In other words, the central second through-hole 11b1 is the second through-hole 11b closest to the n electrode 30, the intermediate second through-hole 11b2 is the second through-hole 11b next closest to the n electrode 30, and the outer peripheral second through-hole 11b3 is the second through-hole 11b furthest from the n electrode 30 (closest to the p electrode 50). The distance between the central second through-hole 11b1 and the n electrode 30 is the shortest distance between the central second through-hole 11b1 and the n electrode 30. The distance between the intermediate second through-hole 11b2 and the n electrode 30 is the shortest distance between the intermediate second through-hole 11b2 and the n electrode 30.

[0072] The diameter R23 of the outer peripheral second through-hole 11b3 in a top view is larger than the diameter R22 of the intermediate second through-hole 11b2 in a top view and the diameter R21 of the central second through-hole 11b1 in a top view. Diameter R22 is larger than diameter R21. In other words, the diameter R2 of the multiple second through-holes 11b in a top view increases as you move away from the n electrode 30.

[0073] In this way, by increasing the diameter R2 of the multiple second through-holes 11b in a top view as it moves away from the n electrode 30, the current density can be increased at positions far from the n electrode 30. This improves the bias in the current density distribution and improves the luminescence intensity distribution.

[0074] In the light-emitting element 400, the multiple third through-holes 11c include a central third through-hole 11c1, an intermediate third through-hole 11c2, and an outer peripheral third through-hole 11c3. The distance between the central third through-hole 11c1 and the n electrode 30 is shorter than the distance between the intermediate third through-hole 11c2 and the n electrode 30. The distance between the intermediate third through-hole 11c2 and the n electrode 30 is shorter than the distance between the outer peripheral third through-hole 11c3 and the n electrode 30. In other words, the central third through-hole 11c1 is the third through-hole 11c closest to the n electrode 30, the intermediate third through-hole 11c2 is the third through-hole 11c next closest to the n electrode 30, and the outer peripheral third through-hole 11c3 is the third through-hole 11c furthest from the n electrode 30.

[0075] The diameter R33 of the outer third through-hole 11c3 in a top view is larger than the diameter R32 of the intermediate third through-hole 11c2 in a top view and the diameter R31 of the central third through-hole 11c1 in a top view. Diameter R32 is larger than diameter R31. In other words, the diameter R3 of the multiple third through-holes 11c in a top view increases as you move away from the n electrode 30.

[0076] In this way, by increasing the diameter R3 of the multiple third through-holes 11c in a top view as it moves away from the n electrode 30, the current density can be increased at positions far from the n electrode 30. This improves the bias in the current density distribution and improves the luminescence intensity distribution.

[0077] <Fifth Embodiment> Figure 10 is a top view showing a light-emitting element according to the fifth embodiment. As shown in Figure 10, the light-emitting element 500 according to the fifth embodiment is substantially the same as the light-emitting element 100, except that the structure of the multiple third through-holes 11c is different.

[0078] In the light-emitting element 500, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position that overlaps with at least one of the plurality of third through-holes 11c when viewed from above. In the light-emitting element 500, the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position that overlaps with at least one of the plurality of third through-holes 11c and a plurality of fourth through-holes 11d when viewed from above.

[0079] Thus, in the light-emitting element 500, the first conductive portion 41 contacts the p-type semiconductor layer 21 at a position that overlaps with a plurality of fourth through-holes 11d located near the n electrode 30, but not between the n electrode 30 and the p electrode 50. Furthermore, the first conductive portion 41 and the second conductive portion 42 contact the p-type semiconductor layer 21 at a position that overlaps with a plurality of third through-holes 11c located near the outer periphery of the semiconductor structure 20, but not between the n electrode 30 and the p electrode 50. The contact resistance of the second conductive material contained in the second conductive portion 42 to the p-type semiconductor layer 21 is lower than the contact resistance of the first conductive material contained in the first conductive portion 41 to the p-type semiconductor layer 21. As a result, the current density can be increased in the region of the p-type semiconductor layer 21 located near the outer periphery of the semiconductor structure 20, where current is less likely to flow when viewed from above than near the n electrode 30. Therefore, the bias in the current density distribution can be improved, and the light emission intensity distribution can be improved. Furthermore, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position overlapping with at least one of the multiple third through-holes 11c, while the second conductive portion 42 is not in contact with the p-type semiconductor layer 21 at the positions overlapping with at least one of the multiple third through-holes 11c and the multiple fourth through-holes 11d. As a result, the contact area between the second conductive portion 42 and the p-type semiconductor layer 21 does not become too large, thereby reducing the reaction between the second conductive portion 42 and the p-type semiconductor layer 21 and the resulting deterioration of a portion of the second conductive portion 42.

[0080] Furthermore, in the light-emitting element 500, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position that overlaps with one of two adjacent third through-holes 11c in a top view. The first conductive portion 41 is in contact with the p-type semiconductor layer at a position that overlaps with the other of two adjacent third through-holes 11c in a top view. In other words, in the light-emitting element 500, in a top view, the third through-holes 11c with the first conductive portion 41 inside and the third through-holes 11c with the second conductive portion 42 inside are arranged alternately.

[0081] Furthermore, by arranging the third through-hole 11c, which has a first conductive part 41 inside, and the third through-hole 11c, which has a second conductive part 42 inside, alternately, the light emission intensity distribution can be improved.

[0082] Even in the light-emitting element 500, the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 is smaller than the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21 (S2 < S1). In the light-emitting element 500, the first conductive portion 41 is in contact with the p-type semiconductor layer 21 at a position overlapping at least one of the plurality of first through-holes 11a, the plurality of third through-holes 11c, and the plurality of fourth through-holes 11d in a top view. From this, in the light-emitting element 500, the total contact area S1 between the first conductive portion 41 and the p-type semiconductor layer 21 is the sum of the contact area S11 between the first conductive portion 41 and the p-type semiconductor layer 21 at a position overlapping the plurality of first through-holes 11a in a top view, the contact area S13 between the first conductive portion 41 and the p-type semiconductor layer 21 at a position overlapping at least one of the plurality of third through-holes 11c in a top view, and the contact area S14 between the first conductive portion 41 and the p-type semiconductor layer 21 at a position overlapping the plurality of fourth through-holes 11d in a top view (S1 = S11 + S13 + S14). Also, in the light-emitting element 500, the second conductive portion 42 is in contact with the p-type semiconductor layer 21 at a position overlapping at least one of the plurality of second through-holes 11b and the plurality of third through-holes 11c in a top view. From this, in the light-emitting element 500, the total contact area S2 between the second conductive portion 42 and the p-type semiconductor layer 21 is the sum of the contact area S22 between the second conductive portion 42 and the p-type semiconductor layer 21 at a position overlapping the plurality of second through-holes 11b in a top view and the contact area S23 between the second conductive portion 42 and the p-type semiconductor layer 21 at a position overlapping at least one of the plurality of third through-holes 11c in a top view (S2 = S22 + S23).

[0083] The number of multiple first through-holes 11a, multiple second through-holes 11b, multiple third through-holes 11c, and multiple fourth through-holes 11d in the light-emitting element 500 is the same as the number of multiple first through-holes 11a, multiple second through-holes 11b, multiple third through-holes 11c, and multiple fourth through-holes 11d in the light-emitting element 100. In other words, in the light-emitting element 200, similar to the light-emitting element 100, the number of multiple second through-holes 11b is less than the number of multiple first through-holes 11a. Also, the number of through-holes in which the second conductive part 42 is located is less than the number of through-holes in which the first conductive part 41 is located. This makes it easier to make the total contact area S2 between the second conductive part 42 and the p-type semiconductor layer 21 smaller than the total contact area S1 between the first conductive part 41 and the p-type semiconductor layer 21.

[0084] Furthermore, the first maximum spacing P1, second maximum spacing P2, third maximum spacing P3, and fourth maximum spacing P4 of the light-emitting element 500 are the same as the first maximum spacing P1, second maximum spacing P2, third maximum spacing P3, and fourth maximum spacing P4 of the light-emitting element 100.

[0085] Furthermore, the diameters R1, R2, and R4 of the light-emitting element 500 are the same as the diameters R1, R2, and R4 of the light-emitting element 100. The diameter R3a of the third through-hole 11c, in which the first conductive part 41 is located, is the same as the diameters R1 and R4. The diameter R3b of the third through-hole 11c, in which the second conductive part 42 is located, is the same as the diameter R2.

[0086] The embodiment may include the following configurations.

[0087] (Composition 1) An insulating layer having multiple through holes, A semiconductor structure having a p-type semiconductor layer disposed on the insulating layer, an emissive layer disposed on the p-type semiconductor layer, and an n-type semiconductor layer disposed on the emissive layer, An n-electrode is disposed on the n-type semiconductor layer and electrically connected to the n-type semiconductor layer, A conductive member is disposed inside the plurality of through holes and in contact with the p-type semiconductor layer, The conductive member and the p electrode electrically connected, Equipped with, The plurality of through holes comprises a plurality of first through holes arranged between the n electrode and the p electrode in a top view, and a plurality of second through holes arranged between the plurality of first through holes and the p electrode in a top view. The conductive member has a first conductive portion containing a first conductive material and a second conductive portion containing a second conductive material. The contact resistance of the second conductive material to the p-type semiconductor layer is lower than the contact resistance of the first conductive material to the p-type semiconductor layer. The first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of first through holes when viewed from above, The second conductive portion is a light-emitting element that is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of second through-holes when viewed from above. (Configuration 2) The present invention further comprises a metal member disposed below the conductive member and electrically connected to the conductive member, The first conductive portion has a conductive through-hole that overlaps with one of the plurality of second through-holes when viewed from above. The light-emitting element according to configuration 1, wherein the metal member is in contact with the second conductive part at a position that overlaps with the conductive part through-hole when viewed from above. (Composition 3) The light-emitting element according to configuration 1 or 2, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of second through-holes when viewed from above. (Composition 4) A light-emitting element according to any one of configurations 1 to 3, wherein the total contact area between the second conductive portion and the p-type semiconductor layer is smaller than the total contact area between the first conductive portion and the p-type semiconductor layer. (Composition 5) A light-emitting element according to any one of configurations 1 to 4, wherein the number of the plurality of second through holes is less than the number of the plurality of first through holes. (Composition 6) A light-emitting element according to any one of configurations 1 to 5, wherein the diameter of each of the plurality of second through holes in a top view is smaller than the diameter of each of the plurality of first through holes in a top view. (Composition 7) A light-emitting element according to any one of configurations 1 to 6, wherein, in a top view, the first maximum distance between two adjacent first through-holes among the plurality of first through-holes is shorter than the second maximum distance between two adjacent second through-holes among the plurality of second through-holes. (Composition 8) The light-emitting element according to any one of configurations 1 to 7, wherein the diameter of the plurality of second through holes in a top view increases as they move away from the n electrode. (Composition 9) The plurality of through holes further include a plurality of third through holes and a plurality of fourth through holes that are not located between the n electrode and the p electrode in a top view. At least one of the plurality of fourth through holes is located between the n electrode and the plurality of third through holes in a top view, The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of third through holes when viewed from above. The first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of fourth through holes when viewed from above, as described in any one of configurations 1 to 8. (Composition 10) The light-emitting element according to configuration 9, wherein the diameter of the plurality of third through-holes in a top view increases as they move away from the n electrode. (Composition 11) The plurality of through holes further comprises a plurality of third through holes not located between the n electrode and the p electrode, and a plurality of fourth through holes not located between the n electrode and the p electrode, At least one of the plurality of fourth through holes is located between the n electrode and the third through hole in a top view, The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with at least one of the plurality of third through holes when viewed from above. The light-emitting element according to any one of configurations 1 to 8, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with at least one of the plurality of third through holes and the plurality of fourth through holes when viewed from above. (Composition 12) The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with one of the two adjacent third through holes in a top view, The light-emitting element according to configuration 11, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the other of two adjacent third through holes in a top view. (Composition 13) The first conductive material includes ITO, The second conductive material comprises Au, The aforementioned metal member is a light-emitting element according to configuration 2, comprising Au. (Composition 14) The aforementioned p-type semiconductor layer includes GaP, The aforementioned n-type semiconductor layer includes GaAs, The light-emitting layer comprises AlGaInP, as described in any one of configurations 1 to 13.

[0088] As described above, according to the embodiment, a light-emitting element is provided that can improve the bias in the light emission intensity distribution.

[0089] The embodiments described above are examples of the present invention, and the present invention is not limited to these embodiments. For example, the present invention is also included in the embodiments described above in which some components or processes are added, deleted, or modified. Furthermore, the embodiments described above can be implemented in combination with each other. [Explanation of symbols]

[0090] 10: Insulating layer 11: Through hole 11a: 1st through hole 11b: 2nd through hole 11b1: Central second through hole 11b2: Intermediate second through hole 11b3: Outer periphery second through hole 11c: 3rd through hole 11c1: Central third through hole 11c2: Intermediate third through hole 11c3: Outer periphery third through hole 11d: 4th through hole 20: Semiconductor Structures 21: p-type semiconductor layer 22: Emitting layer 23: n-type semiconductor layer 23a: First n-type semiconductor layer 23b: Second n-type semiconductor layer 30:n electrode 31: Pad area 32: Stretched part 40: Conductive material 41: First conductive part 41a: Part 1 41b:Second part 41c: 3rd part 41h: Conductive part through hole 42: Second conductive part 50:p electrode 60: Metal components 70: Circuit board 80:Protective film 100, 100A, 100B, 200, 300, 400, 500: Light-emitting elements P1~P4: 1st~4th maximum interval R1, R2, R21, R22, R23, R3, R31, R32, R33, R3a, R3b, R4: Diameter

Claims

1. An insulating layer having multiple through holes, A semiconductor structure having a p-type semiconductor layer disposed on the insulating layer, an emissive layer disposed on the p-type semiconductor layer, and an n-type semiconductor layer disposed on the emissive layer, An n-electrode is disposed on the n-type semiconductor layer and electrically connected to the n-type semiconductor layer, A conductive member is disposed inside the plurality of through holes and in contact with the p-type semiconductor layer, The conductive member and the p electrode electrically connected, Equipped with, The plurality of through holes comprises a plurality of first through holes arranged between the n electrode and the p electrode in a top view, and a plurality of second through holes arranged between the plurality of first through holes and the p electrode in a top view. The conductive member comprises a first conductive portion containing a first conductive material and a second conductive portion containing a second conductive material. The contact resistance of the second conductive material to the p-type semiconductor layer is lower than the contact resistance of the first conductive material to the p-type semiconductor layer. The first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of first through holes when viewed from above. The second conductive portion is a light-emitting element that contacts the p-type semiconductor layer at a position that overlaps with the plurality of second through-holes when viewed from above.

2. The present invention further comprises a metal member disposed below the conductive member and electrically connected to the conductive member, The first conductive portion has a conductive through-hole that overlaps with one of the plurality of second through-holes when viewed from above. The light-emitting element according to claim 1, wherein the metal member is in contact with the second conductive portion at a position that overlaps with the through-hole of the conductive portion when viewed from above.

3. The light-emitting element according to claim 1, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of second through holes when viewed from above.

4. The light-emitting element according to claim 1, wherein the total contact area between the second conductive portion and the p-type semiconductor layer is smaller than the total contact area between the first conductive portion and the p-type semiconductor layer.

5. The light-emitting element according to claim 4, wherein the number of the plurality of second through holes is less than the number of the plurality of first through holes.

6. The light-emitting element according to claim 4, wherein the diameter of each of the plurality of second through holes in a top view is smaller than the diameter of each of the plurality of first through holes in a top view.

7. The light-emitting element according to claim 4, wherein, in a top view, the first maximum distance between two adjacent first through-holes among the plurality of first through-holes is shorter than the second maximum distance between two adjacent second through-holes among the plurality of second through-holes.

8. The light-emitting element according to claim 1, wherein the diameter of the plurality of second through holes in a top view increases as it moves away from the n electrode.

9. The plurality of through holes further include a plurality of third through holes and a plurality of fourth through holes that are not located between the n electrode and the p electrode in a top view. At least one of the plurality of fourth through holes is located between the n electrode and the plurality of third through holes in a top view, The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of third through holes when viewed from above. The light-emitting element according to claim 1, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the plurality of fourth through holes when viewed from above.

10. The light-emitting element according to claim 9, wherein the diameter of the plurality of third through holes in a top view increases as it moves away from the n electrode.

11. The plurality of through holes further comprises a plurality of third through holes not located between the n electrode and the p electrode, and a plurality of fourth through holes not located between the n electrode and the p electrode. At least one of the plurality of fourth through holes is located between the n electrode and the third through hole in a top view, The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with at least one of the plurality of third through holes when viewed from above. The light-emitting element according to claim 1, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with at least one of the plurality of third through holes and the plurality of fourth through holes when viewed from above.

12. The second conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with one of the two adjacent third through holes in a top view, The light-emitting element according to claim 11, wherein the first conductive portion is in contact with the p-type semiconductor layer at a position that overlaps with the other of two adjacent third through holes in a top view.

13. The first conductive material includes ITO, The second conductive material includes Au, The light-emitting element according to claim 2, wherein the metal member includes Au.

14. The aforementioned p-type semiconductor layer includes GaP, The n-type semiconductor layer includes GaAs, The light-emitting element according to any one of claims 1 to 13, wherein the light-emitting layer comprises AlGaInP.

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