Light-emitting element

Abstract

To provide a light-emitting element. [Solution] The light-emitting element includes a semiconductor structure and a reflective layer, the semiconductor structure includes a surface and side walls inclined with respect to the surface, the semiconductor structure includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer having a first edge and a first area, the reflective layer being located on the semiconductor structure and having an outer edge and a second area, there being a distance between the first edge and the outer edge, the distance being between 0 μm and 10 μm, and the second area of ​​the reflective layer being 80% or more of the first area of ​​the second semiconductor layer.

Description

[Technical Field]

[0001] This application relates to the structure of a light-emitting element, and more particularly to a semiconductor structure and a light-emitting element including a reflective layer located in the semiconductor structure. [Background technology]

[0002] Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices. Their advantages include low power consumption, low heat generation, long working life, vibration resistance, small size, fast response speed, and excellent photoelectric properties, such as a stable emission wavelength. For these reasons, LEDs are widely used in home appliances, equipment indicator lights, and photoelectric products. [Overview of the Initiative] [Problems that the invention aims to solve]

[0003] The present invention provides a semiconductor structure and a light-emitting element including a reflective layer located in the semiconductor structure. [Means for solving the problem]

[0004] The light-emitting element includes a semiconductor structure and a reflective layer, the semiconductor structure includes a surface and side walls inclined with respect to the surface, the semiconductor structure includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first and second semiconductor layers, the second semiconductor layer having a first edge and a first area, the reflective layer being located on the semiconductor structure and having an outer edge and a second area, there being a distance between the first edge and the outer edge, the distance being between 0 μm and 10 μm, and the second area of ​​the reflective layer being 80% or more of the first area of ​​the second semiconductor layer. [Brief explanation of the drawing]

[0005] [Figure 1] This is a top view of the light-emitting element 1c disclosed in one embodiment of the present application. [Figure 2] This is a schematic cross-sectional view of the light-emitting element 1c along the line D-D' in Figure 1. [Figure 3A] Schematic partial cross-sectional views of the transparent conductive layer and the reflective layer of the light-emitting elements disclosed in different embodiments of the present application. [Figure 3B] Schematic partial cross-sectional views of the transparent conductive layer and the reflective layer of the light-emitting elements disclosed in different embodiments of the present application. [Figure 3C] Schematic partial cross-sectional views of the transparent conductive layer and the reflective layer of the light-emitting elements disclosed in different embodiments of the present application. [Figure 3D] Schematic partial cross-sectional view of the light-emitting element disclosed in one embodiment of the present application. [Figure 4A] Characteristic table of Samples A to B. [Figure 4B] Characteristic table of Samples C to F. [Figure 5] Top view of the light-emitting element 2c disclosed in one embodiment of the present application. [Figure 6A] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6B] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6B-1] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6C] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6C-1] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6D] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6E] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6E-1] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6F] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6G] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6H] Manufacturing process diagrams of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 6I] It is a manufacturing process diagram of the light-emitting elements 1c and 2c disclosed in the embodiments of the present application. [Figure 7] It is a schematic cross-sectional view of the light-emitting element 2c along the line E-E' in FIG. 5. [Figure 8] It is a schematic diagram of the light-emitting device 3 according to an embodiment of the present application. [Figure 9] It is a schematic diagram of the light-emitting device 4 according to an embodiment of the present application.

Mode for Carrying Out the Invention

[0006] In order to show the present application in more detail and comprehensively, the following will be described based on embodiments and with further reference to the drawings. However, the following embodiments are examples of the light-emitting elements of the present application, and the present application is not limited to the following embodiments. Also, when there is no particular limitation on the size, material, shape, relative arrangement, etc. of the components described in the embodiments of this specification, it is merely an explanation, and the scope of the present application is not limited thereto. Moreover, the size or positional relationship of the members shown in each drawing may be enlarged for the sake of clarity of explanation. Furthermore, in the following description, members of the same or the same nature will be denoted by the same reference numerals in order to appropriately omit detailed descriptions.

[0007] Figure 1 is a top view of a light-emitting element 1c disclosed in one embodiment of the present application. Figure 2 is a schematic cross-sectional view of the light-emitting element 1c along the line D-D' in Figure 1. Figures 6A, 6B, 6C, 6D, 6E, and 6G-6I are manufacturing process diagrams of the light-emitting element 1c disclosed in one embodiment of the present application. The light-emitting element 1c of the embodiment of the present application is a flip-chip type light-emitting diode. The light-emitting element 1c includes a substrate 11c and one or more semiconductor structures 1000c located on the substrate 11c. Each of the one or more semiconductor structures 1000c includes a semiconductor stack 10c, the semiconductor stack 10c includes a first semiconductor layer 101c, a second semiconductor layer 102c, and an active layer 103c located between the first semiconductor layer 101c and the second semiconductor layer 102c. The active layer 103c and the second semiconductor layer 102c are stacked sequentially on the first semiconductor layer 101c along the stacking direction, and the semiconductor structure 1000c includes an exposed portion that exposes a part of the first semiconductor layer 101c. As shown in Figures 2 and 6A, a portion of the second semiconductor layer 102c and the active layer 103c is removed to expose the exposed portion, which includes the first surface 1011c of the first semiconductor layer 101c and one or more second surfaces 1012c. In one embodiment, the first surface 1011c is located on the outer edge of one or more semiconductor structures 1000c, and the first surface 1011c remains surrounding the second semiconductor layer 102c and the active layer 103c on the substrate 11c. Figure 6A is an overhead view of the semiconductor structure 1000c. In this embodiment, the light-emitting element 1c comprises only one semiconductor structure 1000c, and the first surface 1011c of the first semiconductor layer 101c surrounds the second semiconductor layer 102 and the active layer 103c. Also in this embodiment, the first surface 1011c is located substantially in the peripheral region of the semiconductor structure 1000c. In another embodiment, the substrate 11c of the light-emitting element 1c further includes an exposed surface 11s surrounding the outer edge of the semiconductor structure 1000c. The light-emitting element 1c includes one or more openings, for example, holes 100c in the second semiconductor layer 102c and the active layer 103c that expose one or more second surfaces 1012c of the first semiconductor layer 101c. In one embodiment, multiple semiconductor structures 1000c are separated from each other by one or more openings, for example, grooves, and multiple semiconductor structures 1000c are connected to each other via the first semiconductor layer 101c.In one embodiment (not shown), a plurality of semiconductor structures 1000c are not connected by a first semiconductor layer 101c and are physically separated from each other by one or more openings. In one embodiment, the light-emitting element 1c further includes a first insulating structure 20c, a transparent conductive layer 30c, a reflective structure including a reflective layer 40c and a barrier layer 41c, a second insulating structure 50c, a contact layer 60c, a third insulating structure 70c, and first electrode pads 80c and second electrode pads 90c located on one or more semiconductor structures 1000c.

[0008] In one embodiment of the present invention, the substrate 11c includes a patterned surface. The patterned surface includes a plurality of protrusions. The shape of the protrusions includes tapered or conical shapes, and the protrusions can increase the light extraction efficiency of the light-emitting element. In one embodiment of the present invention, the substrate 11c is a growth substrate and includes, for example, a gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, gallium nitride (GaN) wafer, or silicon carbide (SiC) wafer for growing gallium nitride (GaN) or indium gallium nitride (InGaN). The semiconductor stack 10 is a group III nitride compound semiconductor and can be formed on the substrate 11c by metal-organic vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD), or ion electroplating, such as sputtering or evaporation. Furthermore, to adjust for crystal lattice mismatch between the substrate 11c and the semiconductor stack 10c, a buffer structure (not shown) may be formed on the substrate 11c before forming the semiconductor stack 10c. The buffer structure may be composed of gallium nitride (GaN)-based materials, such as gallium nitride and aluminum gallium nitride, or aluminum nitride (AlN)-based materials, such as aluminum nitride. The buffer structure may be monolayer or multilayer. The buffer structure can be formed by metal-organic vapor deposition (MOCVD), molecular beam epitaxy (MBE), or physical vapor deposition (PVD). Physical vapor deposition (PVD) includes sputtering methods, such as reactive sputtering, or evaporation methods, such as electron beam evaporation and thermal evaporation. In one embodiment, the buffer structure includes an aluminum nitride (AlN) buffer layer, which is formed by sputtering. The aluminum nitride (AlN) buffer layer is formed on a growth substrate having a patterned surface. Since sputtering can form a dense buffer layer with high uniformity, the aluminum nitride (AlN) buffer layer may be grown conformally on the patterned surface of the substrate 11c.

[0009] In one embodiment of the present invention, the semiconductor stack 10c includes optical properties, such as emission angle or wavelength distribution, and electrical properties, such as forward voltage or reverse current. In one embodiment of the present invention, the first semiconductor layer 101c and the second semiconductor layer 102c may be cladding layers or confinement layers, and both have different conductivity types, electrical properties, polarities, or provide electrons or holes by doped elements. For example, the first semiconductor layer 101c is an n-type semiconductor layer, and the second semiconductor layer 102c is a p-type semiconductor layer. The active layer 103c is formed between the first semiconductor layer 101c and the second semiconductor layer 102c, and electrons and holes are coupled within the active layer 103c by current drive, and the electrical energy is converted into light energy to emit a ray of light. The wavelength of the ray of light emitted by the light-emitting element 1c is adjusted by changing the physical and chemical composition of one or more layers of the semiconductor stack 10c. The material of the semiconductor stack 10c includes a III-V semiconductor material, for example, Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P, and 0 ≤ x, y ≤ 1, (x + y) ≤ 1. Depending on the material of the active layer 103c, if the material of the semiconductor stack 10c is AlInGaP-based, the active layer 103c can emit red light with a wavelength between 610 nm and 650 nm, or yellow light with a wavelength between 530 nm and 570 nm. If the material of the semiconductor stack 10b is InGaN-based, the active layer 103c can emit blue light, deep blue light, or green light with a wavelength between 400 nm and 490 nm. If the material of the semiconductor stack 10c is AlGaN-based, the active layer 103c can emit ultraviolet light with a wavelength between 250 nm and 400 nm. The active layer 103c may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the active layer 103v may be a neutral, p-type, or n-type semiconductor.

[0010] Referring to Figure 2, in one embodiment, the semiconductor structure 1000c includes a first outer wall 1003c and a second outer wall 1001c, and one end of the first surface 1011c of the first semiconductor layer 101c is connected to the first outer wall 1003c, and the other end of the first surface 1011c is connected to the second outer wall 1001c. The second outer wall 1001c includes the side walls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. In this embodiment, the second outer wall 1001c is composed of the side walls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. The first outer wall 1003c is located between the first surface 1011c and the substrate 11c. In one embodiment, the first outer wall 1003c is inclined with respect to the exposed surface 11s of the substrate 11c. There is an acute angle between the first outer wall 1003c and the exposed surface 11s. In one embodiment, there is an obtuse angle between the first outer wall 1003c and the exposed surface 11s.

[0011] The semiconductor stack 10c further includes an inner wall 1002c. Similar to the second outer wall 1001c, the inner wall 1002c in the through-hole 100c is composed of the side walls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. In the embodiment of the present application, the through-hole 100c is defined by the inner wall 1002c and the second surface 1012c of the first semiconductor layer 101c. One end of the inner wall 1002c is connected to the second surface 1012c of the first semiconductor layer 101c, and the other end of the inner wall 1002c is connected to the surface 102s of the second semiconductor layer 102c. The surface 102s of the second semiconductor layer 102c is substantially perpendicular to the stacking direction. The inner wall 1002c and the second outer wall 1001c are inclined with respect to the surface 102s of the second semiconductor layer 102c. The inner wall 1002c is also inclined with respect to the second surface 1012c of the first semiconductor layer 101c. There is an angle between the inner wall 1002c and the second surface 1012c, which is either acute or obtuse, and there is also an angle between the second outer wall 1001c and the first surface 1011c, which is either acute or obtuse. The angle between the second outer wall 1001c and the surface 102s is between 100 and 140 degrees, which is similar to the angle between the inner wall 1002c and the surface 102s. Furthermore, the semiconductor structure 1000c includes a first edge E1 and a second edge E2, where the first edge E1 is the boundary between the second outer wall 1001c and the surface 102s of the second semiconductor layer 102c, and the second edge E2 is the boundary between the inner wall 1002c and the surface 102s of the second semiconductor layer 102c. When viewed from above, the second semiconductor layer 102 includes the first edge E1. More specifically, when the light-emitting element 1c is viewed from above, the first edge E1 is the contour of the surface 102s of the second semiconductor layer 102c, and the second edge E2 is the contour of the through hole 100c. In one embodiment, either the first edge E1 or the second edge E2 is closed. In one embodiment, the second edge E2 is surrounded by the first edge E1.

[0012] Figure 6B is a top view of the first insulating structure 20c. In one embodiment of the present invention, the first insulating structure 20c is formed on the semiconductor structure 1000c of the light-emitting element 1c by sputtering or growth. As shown in Figures 2 and 6B, in a top view, the first insulating structure 20c includes an enclosing insulating portion 201c and a plurality of annular covering areas 202c. In this embodiment, the enclosing insulating portion 201c is located in a region close to the first edge E1 of the semiconductor structure 1000c, and the plurality of annular covering areas 202c are located in a region close to the second edge E2 of the semiconductor structure 1000c. In this embodiment, both the enclosing insulating portion 201c and the plurality of annular covering areas 202c cover a part of the surface 102s of the second semiconductor layer 102c, the second outer wall 1001c, and the inner wall 1002c of the semiconductor structure 1000c. Furthermore, the enclosed insulating portion 201c covers a portion of the first surface 1011c, and the annular covering area 202c covers a portion of the second surface 1012c. As shown in Figure 2, the first insulating structure 20c includes a top portion f20c located on the surface 102s of the second semiconductor layer 102c, a side portion s20c located on the second outer wall 1001c and the inner wall 1002c, and a bottom portion t20c located on the first surface 1011c and the second surface 1012c of the first semiconductor layer 101c, with the bottom portion t20c exposing a portion of the second surface 1012c and the first surface 1011c. More specifically, the first insulating structure 20c is formed on the first surface 1011c, the second surface 1012c, the second outer wall 1001c, the inner wall 1002c, and the surface 102s. The first insulating structure 20c further includes an opening 203c on the surface 102s of the second semiconductor layer 102c, the opening 203c being defined by the side surface of the top portion f20c. The first insulating structure 20c further includes an opening 204c on the second surface 1012c, the opening 204c being defined by the side surface of the bottom portion t20c. The material of the first insulating structure 20c includes a nonconductive material. The nonconductive material includes an organic material, an inorganic material, or a dielectric material.The organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. The inorganic materials include silicone or glass. The dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ). In one embodiment, the first insulating structure 20c includes one or more layers. The first insulating structure 20c protects the sidewalls of the semiconductor structure 1000c and can prevent the active layer 103c from being damaged in subsequent processes. When the first insulating structure 20c includes multiple layers, the first insulating structure 20c may be a distributed Bragg reflector (DBR) structure, which can protect the sidewalls of the semiconductor structure 1000c and selectively reflect light of a specific wavelength emitted by the active layer 103c to the outside of the light-emitting element 1c to enhance the luminance. Specifically, the first insulating structure 20c may be formed by alternately laminating two sub-layers, for example, a SiO x sub-layer and a TiO x sub-layer. More specifically, the distributed Bragg reflector structure includes a plurality of pairs of sub-layers, and the refractive indices of adjacent sub-layers may be different. By adjusting the refractive index difference between the sub-layer with a high refractive index and the sub-layer with a low refractive index in each pair of film layers, the distributed Bragg reflector structure can have a high reflectivity for a specific wavelength or within a specific wavelength range. The two sub-layers in each pair of film layers have different thicknesses. Also, in the distributed Bragg reflector structure, the thicknesses of sub-layers having the same material may be the same or different.

[0013] Figure 6C is a top view of the transparent conductive layer 30c. As shown in Figures 1, 2, and 6C, in this embodiment, the transparent conductive layer 30c of the light-emitting element 1c is formed on the surface 102s of the second semiconductor layer 102c. In one embodiment, the transparent conductive layer 30c may cover a portion of the top portion f20c of the first insulating structure 20c. Specifically, the transparent conductive layer 30c includes a first outer edge 301c and a first inner edge 302c located on the surface 102s of the second semiconductor layer 102c. The transparent conductive layer 30c does not extend beyond the first edge E1 and the second edge E2. In other words, as shown in the top view of the light-emitting element 1c in Figure 1, the first outer edge 301c is closer to the center of the semiconductor structure 1000c than the first edge E1, and the first inner edge 302c is closer to the center of the semiconductor structure 1000C than the second edge E2. In a top view of the light-emitting element 1c, the first outer edge 301c is surrounded by the first edge E1, and the first inner edge 302c surrounds the second edge E2. In one embodiment, the transparent conductive layer 30c may cover the side portion s20c of the first insulating structure 20c.

[0014] The quality of the first insulating structure 20c may be affected by the capabilities and stresses of the manufacturing process, and cracks may occur within the first insulating structure 20c. In one embodiment, the transparent conductive layer 30c is located on the surface 102s and does not extend to cover the second outer wall 1001c and inner wall 1002c, thereby reducing the risk of leakage current occurring due to cracks in the first insulating structure 20c and short-circuiting between the transparent conductive layer 30c and the semiconductor laminate 10c. Thus, the light-emitting element 1c is reliably stable. The transparent conductive layer 30c is formed over substantially the entire surface 102s of the second semiconductor layer 102c and is in contact with the second semiconductor layer 102c, so the current is uniformly distributed throughout the second semiconductor layer 102c via the transparent conductive layer 30c.

[0015] The transparent conductive layer 30c contains a material that is transparent to light rays emitted from the active layer 103c, such as a metal oxide. The metal oxide may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO). The transparent conductive layer 30c is in low-resistance contact with the second semiconductor layer 102c, and for example, an ohmic contact may be formed between the two. The transparent conductive layer 30c may be a single layer or a multilayer layer. For example, if the transparent conductive layer 30c includes multiple sublayers, the transparent conductive layer 30c may have a distributed Bragg mirror (DBR) structure. In this embodiment, the material of the Bragg mirror structure of the transparent conductive layer 30c is conductive. In one embodiment, when viewed from above, the shape of the transparent conductive layer 30c substantially corresponds to the shape of the second semiconductor layer 102c. As shown in Figures 6A and 6C, the shape of the transparent conductive layer 30c in Figure 6C substantially corresponds to the shape of the second semiconductor layer 102c in Figure 6A.

[0016] In one embodiment of the present invention, the reflective structure of the light-emitting element 1c is formed on the transparent conductive layer 30c. The reflective structure includes a reflective layer 40c, a barrier layer 41c, or a combination of both. In one embodiment, when viewed from above, the shape of the reflective layer 40c substantially corresponds to the shape of the second semiconductor layer 102c. Figure 6D is a top view of the reflective layer 40c. As shown in Figures 1, 2 and 6D, the reflective layer 40c includes a second outer edge 401c and a second inner edge 402c. In one embodiment, the reflective layer 40c does not extend outward beyond the first outer edge 301c and / or first inner edge 302c of the transparent conductive layer 30c, nor does it extend outward beyond the first edge E1 and / or second edge E2 of the semiconductor structure 1000c. The first outer edge 301c of the transparent conductive layer 30c is located between the second outer edge 401c and the first edge E1 of the reflective layer 40c, and / or the first inner edge 302c is located between the second inner edge 402c and the second edge E2. In other words, the first outer edge 301c is closer to the first edge E1 than the second outer edge 401c, and the first inner edge 302c is closer to the second edge E2 than the second inner edge 402c. In one embodiment, the reflective layer 40c covers a portion of the top portion f20c of the first insulating structure 20c, for example, located on the top portion f20c of the surface 102s, and the reflective layer 40c does not cover the side portion s20c and the bottom portion t20c. Also, a portion of the transparent conductive layer 30c near the first edge E1 and / or the second edge E2 is located between the reflective layer 40c and the top portion f20c. Specifically, the second outer edge 401c and / or the second inner edge 402c do not extend beyond the first outer edge 301c and / or the first inner edge 302c, respectively. In one embodiment, the transparent conductive layer 30c can prevent the problem of detachment between the reflective layer 40c and the first insulating structure 20c, more specifically, the reflective layer 40c is connected to the first insulating structure 20c via the transparent conductive layer 30c, and the transparent conductive layer 30c located between them can strengthen the adhesive force between the reflective layer 40c and the first insulating structure 20c.

[0017] In one embodiment, the second outer edge 401c is aligned with the first outer edge 301c of the transparent conductive layer 30c, and / or the second inner edge 402c is aligned with the first inner edge 302c of the transparent conductive layer 30c. In another embodiment, the second outer edge 401c is not aligned with the first edge E1, and / or the second inner edge 402c is not aligned with the second edge E2.

[0018] In one embodiment, neither the reflective layer 40c nor the transparent conductive layer 30c extends to cover the sidewalls of the semiconductor structure 1000c, for example, the second outer wall 1001c and the inner wall 1002c. This reduces the risk of leakage current generated by cracks in the reflective layer 40c, the transparent conductive layer 30c, and the first insulating structure 20c reaching the semiconductor structure 1000c and causing an electric shot in the light-emitting element 1c. More specifically, since the second outer wall 1001c and the inner wall 1002c are composed of the side surfaces of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c, if the reflective layer 40c extends to the second outer wall 1001c and the inner wall 1002c, it will cause leakage current when there is a defect or crack in the first insulating structure 20c. Specifically, some material (e.g., silver, aluminum) of the reflective layer 40c may diffuse into the first semiconductor layer 101c and the second semiconductor layer 102c due to defects or cracks in the first insulating structure 20c. This material diffusion in the reflective layer 40c can form electrical connections between the first semiconductor layer 101c and the second semiconductor layer 102c, causing a short circuit. Consequently, the reliability of the light-emitting element 1c may be reduced if the reflective layer 40c extends beyond the first edge E1 and / or the second edge E2 and covers the side portion s20c. However, the present invention is not limited to the above embodiments. Other manufacturing methods or materials or structures for the first insulating structure 20c, such as multilayer insulating layers, may be used to improve the quality and mechanical strength of the first insulating structure 20c and prevent the problem of current short circuits.

[0019] In one embodiment, when the light-emitting element 1c is viewed from above, the second semiconductor layer 102c has a first area, and the reflective layer 40c has a second area. In this embodiment, when the light-emitting element 1c is viewed from above, the first area is determined by the first edge E1 and the second edge E2 of the second semiconductor layer 102c, and the second area is determined by the second outer edge 401c and the second inner edge 402c of the reflective layer 40c. The first edge E1 of the second semiconductor layer 102c surrounds the second outer edge 401c of the reflective layer 40c, and the second inner edge 402c surrounds the second edge E2 of the second semiconductor layer 102c. In order to increase the brightness of the light-emitting element 1c and reflect more light emitted from the active layer 103c in the reflective layer 40c, it is better to design the second area of ​​the reflective layer 40c to be as large as possible, but the balance between the brightness and reliability of the light-emitting element 1c must also be considered. In one embodiment, the second area of ​​the reflective layer 40c is 80% or more of the first area of ​​the second semiconductor layer 102c. In one embodiment, the second area is 82% to 96% of the first area. In one embodiment, the second area is 85% to 95% of the first area.

[0020] In another embodiment, there is a distance D between the second outer edge 401c of the reflective layer 40c and the first edge E1 of the semiconductor structure 1000c, and there is a distance D' between the second inner edge 402c and the second edge E2. In one embodiment, distances D and D' are greater than zero. In one embodiment, distances D and D' are 10 μm or less. In one embodiment, distances D and D' are 8 μm or less. In one embodiment, distances D and D' are greater than 0 μm and less than 10 μm. In one embodiment, distances D and D' are between 2 μm and 8 μm. In yet another embodiment, distances D and D' may be the same or different.

[0021] In one embodiment, the barrier layer 41c is formed on and covers the reflective layer 40c. The outer edge (not shown) of the barrier layer 41c surrounds the second outer edge 401c of the reflective layer 40c, and / or the inner edge (not shown) of the barrier layer 41c surrounds the second inner edge 402c of the reflective layer 40c. In one embodiment, the reflective layer 40c may be formed on and covers the barrier layer 41c, with the outer edge of the barrier layer 41c surrounded by the second outer edge 401c of the reflective layer 40c, and / or the inner edge of the barrier layer 41c surrounded by the second inner edge 402c of the reflective layer 40c. In one embodiment, the outer and inner edges of the barrier layer 41 cover or are aligned with the second outer edge 401c and the second inner edge 402c of the reflective layer 40c, respectively.

[0022] Figures 3A to 3C are schematic partial cross-sectional views of the transparent conductive layer 30c and the reflective layer 40c near the first edge E1 or second edge E2 in a light-emitting element of one embodiment of the present invention, respectively. The reflective layer 40c is formed in the transparent conductive layer 30c. In one embodiment, as shown in Figure 3A, the reflective layer 40c and the transparent conductive layer 30c are formed in the first insulating structure 20c and do not extend into the sidewall or pore 100c of the semiconductor structure 1000c. In one embodiment, as shown in Figures 3B to 3C, the reflective layer 40c and the transparent conductive layer 30c formed in the first insulating structure 20c extend into the sidewall or pore 100c of the semiconductor structure 1000c.

[0023] In one embodiment, as shown in Figure 3A, the reflective layer 40c has a discontinuous structure and includes a first reflective portion 403c and a second reflective portion 404c that are separated from each other. The gap G is between the first reflective portion 403c and the second reflective portion 404c. In one embodiment, as shown in Figure 3A, the transparent conductive layer 30c has a discontinuous structure and includes a first conductive portion 31c and a second conductive portion 32c that are separated from each other. The second conductive portion 32c and the second reflective portion 404c are located entirely on the first insulating structure 20c and the second semiconductor layer 102c. In one embodiment, the first conductive part 31c and the second conductive part 32c are located below the first reflecting part 403c and the second reflecting part 404c, respectively. Since the first reflecting part 403c is not connected to the second reflecting part 404c, the first conductive part 31c is not connected to the second conductive part 32c, and the second conductive part 32c and the second reflecting part 404c are located completely above the first insulating structure 20c, current cannot flow between the first reflecting part 403c and the second reflecting part 404c. In other words, there is no electrical connection between the second reflecting part 404c and the first reflecting part 403c.

[0024] The difference between the embodiment shown in Figure 3B and the embodiment shown in Figure 3A is that in the embodiment shown in Figure 3B, the transparent conductive layer 30c includes a first conductive portion 31c and a third conductive portion 33c that are separated from each other, and the reflective layer 40c includes a first reflective portion 403c and a third reflective portion 405c that are separated from each other, with a gap G between the first reflective portion 403c and the third reflective portion 405c. Furthermore, the third reflective portion 405c and the first reflective portion 403c are electrically insulated from each other. Specifically, the third conductive portion 33c is formed in the first insulating structure 20c and the second semiconductor layer 102c, extends to the second outer wall 1001c, and covers the side portion s20c and bottom portion t20c of the first insulating structure 20c. In one embodiment, the third conductive portion 33c is formed in the first insulating structure 20c and the second semiconductor layer 102c, and extends to the inner wall 1002c, covering the side portion s20c of the first insulating structure 20c. The first reflective portion 403c and the third reflective portion 405c are formed above the first conductive portion 31c and the third conductive portion 33c, respectively.

[0025] In one embodiment, as shown in Figure 3C, the reflective layer 40c includes a first reflective portion 403c', a second reflective portion 404c', and a third reflective portion 405c', which are separated from each other. The transparent conductive layer 30c also includes a first conductive portion 31c', a second conductive portion 32c', and a third conductive portion 33c', which are separated from each other. Therefore, the third reflective portion 405c', the second reflective portion 404c', and the first reflective portion 403c' are electrically insulated from each other. In each light-emitting element of the different embodiments shown in Figures 3A to 3C, each reflective layer 40c has a discontinuous structure and is not electrically connected to each other. When the reflective layer 40c extends to the sidewall of the semiconductor structure 1000c, and the second area of ​​the reflective layer 40c is increased, leakage current problems can be avoided. Thus, in the design of each light-emitting element, the reflective area and reliability related to brightness are considered simultaneously. In one embodiment, as shown in the light-emitting element in Figures 3A to 3C, the second area of ​​the reflective layer 40c is 80% or more of the first area of ​​the second semiconductor layer 102c, and the distance D between the first edge E1 and the second outer edge 401c is between 0 μm and 10 μm. In one embodiment, in the light-emitting element shown in Figure 3A, the first outer edge 301c and the second outer edge 401c are closer to the center of the semiconductor structure 1000c than the first edge E1. In Figures 3B to 3C, the first edge E1 is closer to the center of the semiconductor structure 1000c than the first outer edge 301c and the second outer edge 401c. As shown in Figures 3B to 3C, since the reflective layer 40c covers the sidewall of the semiconductor structure 1000c, the second area of ​​the reflective layer 40c of the light-emitting element shown in Figures 3B to 3C is larger than the second area of ​​the reflective layer 40c of the light-emitting element shown in Figure 3A. Furthermore, since the second area of ​​the reflective layer 40c shown in Figure 3C is larger than the second area shown in Figure 3A or Figure 3B, the brightness of the light-emitting element shown in Figure 3C is higher than that of the light-emitting elements shown in Figures 3A and 3B.

[0026] In one embodiment of the present invention, the reflective layer 40c includes a plurality of sublayers, for example, a distributed Bragg mirror (DBR) structure. In this embodiment, the material of the distributed Bragg mirror structure may be electrically insulating or conductive.

[0027] In one embodiment of the present application, the reflective layer 40c includes a single-layer or multilayer structure, and the reflective layer 40c includes a metallic material having high reflectivity to the active layer 103c, such as silver (Ag), gold (Au), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), nickel (Ni), platinum (Pt), or an alloy thereof. Herein, "high reflectivity" means having a reflectivity of 80% or more with respect to the wavelength of light emitted by the active layer 103c.

[0028] In one embodiment of the present invention, the reflective structure further includes a distributed Bragg mirror (DBR) structure located below the reflective layer 40c. In one embodiment, the distributed Bragg mirror structure is formed between the semiconductor structure 1000c and the reflective layer 40c. A connecting layer can be selectively inserted between the distributed Bragg mirror structure and the reflective layer 40c, thereby strengthening the adhesion between them. For example, the distributed Bragg mirror structure has a first layer connected to the reflective layer 40c, the first layer containing silicon oxide (SiO2), and the reflective layer 40c containing silver (Ag), wherein the connecting layer between them contains indium tin oxide (ITO), indium zinc oxide (IZO), or other material whose adhesion to the reflective layer 40c is higher than that of the first layer of the distributed Bragg mirror structure to the reflective layer 40c.

[0029] In one embodiment of the present invention, the reflective structure further includes a barrier layer 41c covering the reflective layer 40c to prevent oxidation of the surface of the reflective layer 40c and a reduction in its reflectivity. The material of the barrier layer 41c includes a metallic material, such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), zinc (Zn), chromium (Cr), or an alloy of the above materials. The barrier layer 41c may include a single-layer structure or a multilayer structure. When the barrier layer 41c has a multilayer structure, it is formed by alternately stacking a first barrier layer (not shown) and a second barrier layer (not shown), for example, Cr / Pt, Cr / Ti, Cr / TiW, Cr / W, Cr / Zn, Ti / Pt, Ti / W, Ti / TiW, Ti / W, Ti / Zn, Pt / TiW, Pt / W, Pt / Zn, TiW / W, TiW / Zn, or W / Zn. In one embodiment, the material of the barrier layer 41c includes a metal other than gold (Au) or copper (Cu).

[0030] In one embodiment of the present invention, the second insulating structure 50c of the light-emitting element 1c is formed on the semiconductor structure 1000c by sputtering or vapor deposition. The second insulating structure 50c is formed on the semiconductor structure 1000c, the first insulating structure 20c, the transparent conductive layer 30c, and the reflective layer 40c. Figure 6E is a top view of the second insulating structure 50c. As shown in Figures 1, 2, and 6E, the second insulating structure 50c includes one or more first insulating openings 501c, exposing the second surface 1012c of the first semiconductor layer 101c, and one or more second insulating openings 502c, exposing the reflective layer 40c or the barrier layer 41c. In one embodiment, the first insulating openings 501c and the second insulating openings 502c have different widths and numbers. When the light-emitting element 1c is viewed from above, the shapes of the first insulating openings 501c and the second insulating openings 502c include circular, elliptical, rectangular, polygonal, or irregular shapes. In one embodiment, the position of the first insulating opening 501c corresponds to the position of the hole 100c. In one embodiment, one of the second insulating openings 502c is located on one side of the light-emitting element 1c and corresponds to the first insulating opening 501c. The material of the second insulating structure 50c includes a non-conductive material. The non-conductive material includes an organic material, an inorganic material, or a dielectric material. The organic material includes Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. The inorganic material includes silicone or glass. The dielectric material includes aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon dioxide (SiO₂) x ), titanium dioxide (TiO x ), or magnesium fluoride (MgF x ) includes. In one embodiment, the second insulating structure 50c includes a single layer or a multilayer. In one embodiment, the second insulating structure 50c may be a distributed Bragg mirror (DBR) structure. Specifically, the second insulating structure 50c is SiO x Sublayer and TiO x The sublayers may be formed by alternately stacking them. The second insulating structure 50c and the first insulating structure 20c may be the same or different.

[0031] Figure 6G is a top view of the contact layer 60c. As shown in Figures 1, 2 and 6G, in one embodiment, the contact layer 60c is formed on the second insulating structure 50c and the reflective layer 40c or barrier layer 41c. The contact layer 60c includes a first contact portion 601c, a second contact portion 602c, and a thimble region 600c that are electrically insulated from each other. Here, the first contact portion 601c is electrically connected to the first semiconductor layer 101c, the second contact portion 602c is electrically connected to the second semiconductor layer 102c, and the thimble region 600c is electrically insulated from the first contact portion 601c and the second contact portion 602c. The first contact portion 601c is formed on the first surface 1011c of the first semiconductor layer 101c, surrounds the semiconductor structure 1000c, and forms an electrical connection by contacting the first semiconductor layer 101c. In one embodiment, the first contact portion 601c has a circumference greater than the circumference of the active layer 103c. In one embodiment, the first contact portion 601c is also formed on the second surface 1012c of the first semiconductor layer 101c, and covers one or more holes 100c by a plurality of first insulating openings 501c of the second insulating structure 50c, and contacts the first semiconductor layer 101c to form an electrical connection. The thimble region 600c is located on the second semiconductor layer 102c and is electrically insulated from the first semiconductor layer 101c and the second semiconductor layer 102c by the second insulating structure 50c. In this embodiment, when viewed from above, the thimble region 600c is located approximately in the center of the light-emitting element 1c. The second contact portion 602c is electrically connected to the surface 102s of the second semiconductor layer 102c by the reflective layer 40c and the transparent conductive layer 30c, forming an electrical connection between the second contact portion 602c and the second semiconductor layer 102c. In this embodiment, when the light-emitting element 1c is viewed from above, the thimble region 600c is located between the first contact portion 601c and the second contact portion 602c. As shown in Figure 6G, the first contact portion 601c surrounds the thimble region 600c and the second contact portion 602c. In one embodiment, the thimble region 600c is electrically connected to either the first contact portion 601c or the second contact portion 602c. When viewed from above, the shape of the thimble region 600c includes geometric shapes, such as rectangles or circles. The contact layer 60c may have a single-layer structure or a multi-layer structure.The material of the contact layer 60c includes metals, such as aluminum (Al), silver (Ag), chromium (Cr), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), or zinc (Zn).

[0032] After the contact layer 60c is formed, the third insulating structure 70c is located on and covers the contact layer 60c. Figure 6H is a top view of the third insulating structure 70c. As shown in Figures 1, 2 and 6H, the third insulating structure 70c includes a first opening 701c and a second opening 702c. The first opening 701c exposes the first contact portion 601c of the contact layer 60c, and the second opening 702c exposes the second contact portion 602c of the contact layer 60c. The third insulating structure 70c may be single-layer or multi-layer. If the third insulating structure 70c is multi-layer, it may form a distributed Bragg mirror (DBR) structure. The material of the third insulating structure 70c includes a non-conductive material. The non-conductive material includes an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3) and silicon nitride (SiN). x ), silicon dioxide (SiO₂) x ), titanium dioxide (TiO x ), or magnesium fluoride (MgF x ) is included. The materials of the first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c may be the same, different, or selected from the above materials. The first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c can be formed by printing, vapor deposition, or sputtering.

[0033] After forming the third insulating structure 70c, the first electrode pad 80c and the second electrode pad 90c are formed in the semiconductor laminate 10c. Figure 6I is a top view of the first electrode pad 80c and the second electrode pad 90c. As shown in Figures 1, 2 and 6I, the position and / or shape of the first electrode pad 80c and the second electrode pad 90c substantially corresponds to the position and / or shape of the first opening 701c and the second opening 702c of the third insulating structure 70c. The first electrode pad 80c is electrically connected to the first semiconductor layer 101c by the first opening 701c of the third insulating structure 70c and the first contact portion 601c of the contact layer 60c, and the second electrode pad 90c is electrically connected to the second semiconductor layer 102c by the second opening 702c of the third insulating structure 70c, the second contact portion 602c of the contact layer 60c, the reflective layer 40c and the transparent conductive layer 30c. When the light-emitting element 1c is viewed from above, the first electrode pad 80c and the second electrode pad 90c have the same shape, and for example, the first electrode pad 80c and the second electrode pad 90c include rectangles. However, the present invention is not limited thereto. In another embodiment, the shape and size of the first electrode pad 80c differ from those of the second electrode pad 90c, thereby distinguishing the first electrode pad 80c and the second electrode pad 90c, or obtaining a good current distribution in the light-emitting element 1c. For example, the shape of the first electrode pad 80c may be rectangular, the shape of the second electrode pad 90c may be comb-shaped, and the area of ​​the first electrode pad 80c may be larger than the area of ​​the second electrode pad 90c. In this embodiment, the first electrode pad 80c and the second electrode pad 90c include single-layer or multi-layer structures. The material of the first electrode pad 80c and the second electrode pad 90c includes a metallic material, such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or an alloy of the above materials. If the first electrode pad 80c and the second electrode pad 90c include a multilayer structure, the first electrode pad 80c and the second electrode pad 90c each include an upper electrode and a lower electrode (not shown). The upper electrode and the lower electrode have different functions. The upper electrode is used for soldering or wire bonding. The light-emitting element 1c is inverted and mounted on a package substrate (not shown) via the upper electrode by soldering or gold-tin eutectic bonding.The metal material of the upper electrode is a highly ductile metal material, such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os). The upper electrode may be a single layer, multilayer, or alloy of the above materials. In one embodiment of this application, the material of the upper electrode preferably contains nickel (Ni) and / or gold (Au). The function of the lower electrode is to form a stable interface with the contact layer 60c, the reflective layer 40c, or the barrier layer 41c, for example, to improve the interfacial bonding strength between the lower electrode and the contact layer 60c, or to improve the interfacial bonding strength between the lower electrode and the reflective layer 40c or the barrier layer 41c. Another function of the lower electrode is to prevent solder (e.g., tin) or gold-tin alloy (AuSn) from diffusing into the reflective structure and impairing its reflectivity. Therefore, it is preferable that the material of the lower electrode differs from that of the upper electrode, and that the lower electrode material contains metallic elements other than gold (Au) and copper (Cu), such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os). The lower electrode may be a single layer, multilayer, or alloy of the above materials. In one embodiment of the present application, it is preferable that the lower electrode contains a multilayer film of titanium (Ti) and aluminum (Al), or a multilayer film of chromium (Cr) and aluminum (Al).

[0034] Figures 6A, 6B-1, 6C-6D, 6E-1, and 6G-6I are manufacturing process diagrams of a light-emitting element of another embodiment of the present application. The main difference between the light-emitting element of this embodiment and the light-emitting element 1c lies in the structure of the first insulating structure 20c and the second insulating structure 50c. Referring to Figure 6B-1, the first insulating structure 20c1 includes an enclosing insulating portion 201c and a plurality of annular covering areas 202c. Here, the enclosing insulating portion 201c includes a plurality of protrusions 2011c and a plurality of recesses 2012c. In one embodiment, the plurality of protrusions 2011c and a plurality of recesses 2012c of the enclosing insulating portion 201c are arranged alternately. Figure 3D is a schematic partial cross-sectional view of one protrusion 2011c in the light-emitting element of this embodiment, and as shown in Figure 3D and Figure 6B-1, the enclosing insulating portion 201c is located on the first surface 1011c and encloses the semiconductor structure 1000c. In one embodiment, the multiple protrusions 2011c and multiple recesses 2012c of the surrounding insulating portion 201c are arranged alternately on the first surface 1011c. Specifically, the multiple protrusions 2011c extend from the surface 102s of the second semiconductor layer 102c and cover a portion of the first surface 1011c of the semiconductor structure 1000c, while the multiple recesses 2012c expose the rest of the first surface 1011c. In other words, the first surface 1011c includes a first exposed region exposed in the surrounding insulating portion 201c, and the first exposed region is discontinuous.

[0035] Referring to Figure 6E-1, the second insulating structure 50c includes an outer enclosure 503c, and in this embodiment, the outer enclosure 503c includes a plurality of protrusions 5031c and a plurality of recesses 5032c. As shown in Figure 3D, since the second insulating structure 50c covers the first insulating structure 20c, the second outer wall 1001c and a portion of the first surface 1011c that are covered by the first insulating structure 20c are also covered by the second insulating structure 50c. Furthermore, the plurality of protrusions 5031c and a plurality of recesses 5032c of the second insulating structure 50c are arranged alternately along the first surface 1011c of the semiconductor structure 1000c. In one embodiment, the shape of the outer enclosure 503c of the second insulating structure 50c corresponds to the shape of the outer enclosure of the first insulating structure 20c, and the first surface 1011c of the semiconductor structure 1000c is discontinuously exposed. More specifically, the shapes and positions of the multiple protrusions 5031c and the multiple recesses 5032c correspond to the multiple protrusions 2011c and the multiple recesses 2012c of the surrounding insulating portion 201c, respectively. As a result, the first surface 1011c exposed by the multiple recesses 2012c of the first insulating structure 20c is also exposed by the multiple recesses 5032c of the second insulating structure 50c. The first surface 1011c covered by the multiple protrusions 2011c is also covered by the multiple protrusions 5031c. In other words, the first surface 1011c includes a second exposed region exposed by the multiple recesses 5032c, and the second exposed region is discontinuous. The second exposed region of the first surface 1011c substantially corresponds to the first exposed region exposed by the first insulating structure 20c. Referring to Figure 6G, in this embodiment, the first contact portion 601c contacts the first surface 1011c through a plurality of recesses 5032c of the second insulating structure 50c and a plurality of recesses 2012c of the first insulating structure 20c. In other words, the first contact portion 601c includes a discontinuous contact region (not shown) and contacts the first surface 1011c. In this embodiment, the discontinuous contact region between the first contact portion 601c and the first surface 1011c of the semiconductor structure 1000c is advantageous for the current distribution of the light-emitting element and prevents electrical failure of the light-emitting element. Referring to Figure 4A, Figure 4A is a characteristic table of samples A and B. Specifically, the table shows the characteristics of a conventional light-emitting element (sample A) and a light-emitting element 1c of one embodiment of the present application (sample B).Sample A and Sample B have the same shape (rectangular) and the same chip size (35 x 35 mil). 2 The difference is that the area of ​​the reflective layer of the conventional light-emitting element is smaller than the area of ​​the reflective layer 40c of the light-emitting element 1c. Also, the distance D of the light-emitting element 1c is smaller than the distance of the conventional light-emitting element. In the conventional light-emitting element, the distance between the first edge of the second semiconductor layer and the second outer edge of the reflective layer is 15 μm, and the distance D of the light-emitting element 1c is 6 μm. In other words, the area of ​​the reflective layer 40c of the light-emitting element 1c is larger than the area of ​​the reflective layer of the conventional light-emitting element. The ratio of the area of ​​the reflective layer 40c of the light-emitting element 1c to the area of ​​the second semiconductor layer 102c is larger than the ratio of the area of ​​the reflective layer to the area of ​​the second semiconductor layer of the conventional light-emitting element. As shown in the table, the power of the light-emitting element 1c (I V2 ) is 1.8% (ΔI) compared to the power of conventional light-emitting elements. V2 ) is increasing, and the forward voltage (V) of both is increasing. f2 ) and wavelength (W d2 ) maintains the same level. Therefore, the reflective layer 40c, which has a relatively large area, can enhance the functional expression of the light-emitting element 1c.

[0036] As shown in Figure 4B, Figure 4B is a characteristic diagram of samples C to F. Specifically, this table shows the functional representation of samples C to F. Sample C is a conventional light-emitting element. Sample D is a light-emitting element having a contact layer 60c in a discontinuous contact region as shown in Figures 6B-1, 6E-1, and 3D, and does not have a relatively large second-area reflective layer as shown in Figures 1 and 2. Sample E is a light-emitting element 1c having a relatively large second-area reflective layer 40c as shown in Figures 1 and 2. Sample F is a light-emitting element having a contact layer 60c in a discontinuous contact region as shown in Figures 6B-1, 6E-1, and 3D, and a relatively large second-area reflective layer as shown in Figures 1 and 2. In other words, Sample F is a light-emitting element that combines the characteristics of Sample D and Sample E. Both Sample D and Sample E have superior luminance representation compared to Sample C, and the light-emitting element of Sample F has the highest power (I V2 ) has.

[0037] Figure 5 is a top view of a light-emitting element 2c of one embodiment of the present invention. Figure 7 is a schematic cross-sectional view of the light-emitting element 2c along the line E-E' in Figure 5. Figures 6A-6B, 6C-1, 6D, and 6E-6I show the layout of the semiconductor structure 1000c, first insulating structure 20c, transparent conductive layer 30c, reflective layer 40c, second insulating structure 50c, adhesive layer 51c, contact layer 60c, third insulating structure 70c, and electrode pads 80c and 90c in the light-emitting element 2c, respectively, which exposes the first surface 1011c and second surface 1012c of the first semiconductor layer 101c. The light-emitting element 2c of this embodiment is similar to the light-emitting element 1c shown in Figures 1 and 2, but the difference is that the light-emitting element 2c further includes an adhesive layer 51c, which is located between the second insulating structure 50c and the contact layer 60c. Furthermore, the transparent conductive layer 30c of the light-emitting element 2c further includes a first transparent conductive portion f30c, a second transparent conductive portion s30c, and a third transparent conductive portion t30c, which are separated from each other, and is different from the transparent conductive layer 30c of the light-emitting element 1c. In one embodiment, the material of the second insulating structure 50c contains silicon oxide (SiO2), the material of the contact layer 60c contains silver (Ag), and the adhesive layer 51c between the second insulating structure 50c and the contact layer 60c can strengthen the adhesive force between the second insulating structure 50c and the contact layer 60c. The adhesive layer 51c can prevent the contact layer 60c from detaching from the second insulating structure 50c. Inserting the adhesive layer 51c between the two is beneficial in improving the reliability of the light-emitting element 2c. The adhesive force of the material of the adhesive layer 51c to the second insulating structure 50c is stronger than the adhesive force of the contact layer 60c to the second insulating structure 50c.The material of the adhesive layer 51c may be a transparent conductive material or a metal. The transparent conductive material may contain a metal oxide, and the metal oxide may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO). The metal may also contain platinum (Pt). However, the material of the adhesive layer 51c is not limited to the above materials. In one embodiment, the shape and area of ​​the adhesive layer 51c shown in Figure 6F are similar to the shape and area of ​​the second insulating structure 50c shown in Figure 6E. Specifically, the adhesive layer 51c includes one or more first adhesive openings 511c corresponding to the first insulating opening 501c, and one or more second adhesive openings 512c corresponding to the second insulating opening 502c. In one embodiment, the outer perimeter 513c of the adhesive layer 51c includes the outer perimeter 503c of the second insulating structure 50c and is electrically connected to the first surface 1011c of the first semiconductor layer 101c. In one embodiment, the adhesive layer 51c extends to the exposed portion of the semiconductor structure 1000c. Specifically, as shown in Figure 7, the adhesive layer 51c extends to the first surface 1011c and / or the second surface 1012c.

[0038] Referring to Figures 6C-1 and 7, in one embodiment, the first transparent conductive portion f30c is located on the surface 102s of the second semiconductor layer 102c, the second transparent conductive portion s30c is located on the first surface 1011c of the exposed portion, and the third transparent conductive portion t30c is located on the second surface 1012c of the exposed portion in the hole 100c. The transparent conductive layer 30c is connected to the adhesive layer 51c located in the exposed portion. In the top view of the transparent conductive layer 30c shown in Figure 6C-1, the third transparent conductive portion t30c is surrounded by the first transparent conductive portion f30c, and the first transparent conductive portion f30c is surrounded by the second transparent conductive portion s30c. The area of ​​the first transparent conductive portion f30c is larger than the area of ​​the second transparent conductive portion s30c and the area of ​​the third transparent conductive portion t30c. Specifically, in a top view, the first transparent conductive portion f30c has a first enclosure f30c1, the second transparent conductive portion s30c has a second enclosure s30c1 surrounding the first enclosure f30c, and the third transparent conductive portion t30c has a third enclosure t30c1 surrounded by the first enclosure f30c1.

[0039] As shown in Figures 6D and 67, the reflective layer 40c is formed on the first transparent conductive portion f30c and includes a second outer edge 401c and a second inner edge 402c surrounded by the second outer edge 401c. The reflective layer 40c does not extend beyond the first outer edge 301c and / or the first inner edge 302c of the transparent conductive layer 30c, nor does it extend beyond the first edge E1 and / or the second edge E2 of the semiconductor structure 1000c. In this embodiment, the second outer edge 401c is approximately aligned with the first outer edge 301c, and the second inner edge 402c is approximately aligned with the first inner edge 302c. As shown in Figures 6E and 67, the second insulating structure 50c is formed on the reflective layer 40c and covers the first insulating structure 20c. In one embodiment, the second insulating structure 50c shown in Figure 6E-1 is formed on the exposed portion of the semiconductor structure 1000c and includes a plurality of protrusions 5031c and a plurality of recesses 5032c that cover the first surface 1011c or the transparent conductive layer 30c shown in Figure 6C and Figure 6C-1. Specifically, the plurality of protrusions 5031c and the plurality of recesses 5032c are arranged alternately on the first surface 1011c and cover the first surface 1011c discontinuously. More specifically, the plurality of protrusions 5031c cover the portion of the first surface 1011c covered by the plurality of protrusions 2011c, and the plurality of recesses 5032c expose the portion of the first surface 1011c exposed by the plurality of recesses 2012c. In one embodiment, multiple protrusions 5031c cover a portion of the second transparent conductive portion s30c, and multiple recesses 5032c expose a portion of the second transparent conductive portion s30c.

[0040] Referring to Figure 6G, similar to the light-emitting element 1c, the light-emitting element 2c includes a contact layer 60c, which includes a first contact portion 601c, a second contact portion 602c, and a thimble region 600c. The first contact portion 601c is electrically connected to the first semiconductor layer 101c by a first adhesive opening 511c, a first insulating opening 501c, a second transparent conductive portion s30c located on the first surface 1011c, and a third transparent conductive portion t30c located in the hole 100c and on the second surface 1012c. On the other hand, the second contact portion 602c is electrically connected to the second semiconductor layer 102c by a second adhesive opening 512c, a second insulating opening 502c, a reflective layer 40c, and a first transparent conductive portion f30c located on the surface 102s of the second semiconductor layer 102c. In one embodiment, the first contact portion 601c and the second contact portion 602c are made of the same material and have a multilayer structure.

[0041] In one embodiment, the first contact portion 601c includes a first portion and a second portion covering the first portion, the material of the first portion includes Ag / NiTi / TiW / Pt and the material of the second portion includes Ti / Al / Ti / Al / Cr / Pt, and the above materials are formed sequentially in the semiconductor structure 1000c in the direction from the semiconductor stack 10c to the second electrode pad 90c. In this embodiment, the second contact portion 602c also includes a first portion and a second portion similar to the first contact portion 601c. The materials of the first portion and the second portion of the second contact portion 602c are the same as the materials of the first portion and the second portion of the first contact portion 601c. In one embodiment, the reflective structure and the first contact portion 601c include the same material having high reflectivity, and the reflective structure and the second contact portion 602c include the same material having high reflectivity. In one embodiment, the reflective structure, the first contact portion 601c and the second contact portion 602c include silver (Ag).

[0042] In one embodiment, the light-emitting element 2c includes a second transparent conductive portion s30c and a third transparent conductive portion t30c between the contact layer 60c and the first semiconductor layer 101c, both the first contact portion 601c and the second contact portion 602c contain silver, and the adhesive layer 51c is located between the contact layer 60c and the second insulating structure 50c. Compared to the light-emitting element 2c, the conventional light-emitting element has a first contact portion that does not contain silver, and, similar to sample C above, for example, the material of the first contact portion of the conventional light-emitting element contains Cr / Al / Cr / Al / Cr / Pt, and is formed sequentially in the semiconductor structure 1000c. In this embodiment, the light-emitting element 2c can have its brightness increased by increasing the reflective area in the light-emitting element 2c through the silver-containing first contact portion 601c. V2 The power is 923.75mW, and the brightness of the light-emitting element 2c in this embodiment (I V2 The power consumption is 965.83mW, which is 4.56% higher than that of conventional light-emitting elements.

[0043] Figure 8 is a schematic diagram of a light-emitting device 3 based on one embodiment of the present invention. The light-emitting element in the embodiment is mounted on the first pad 511 and the second pad 512 of the package substrate 51 in the form of a flip chip. The first pad 511 and the second pad 512 are electrically insulated from each other by an insulating part 53 containing an insulating material. The flip chip is mounted with the growth substrate side facing the electrode pad formation surface facing upward, and the growth substrate side is the main light extraction surface. To improve the light extraction efficiency of the light-emitting device 3, a reflective structure 54 may be installed around the light-emitting element.

[0044] Figure 9 is a schematic diagram of a light-emitting device 4 based on one embodiment of the present invention. The light-emitting device 4 is a light bulb and includes a light cover 602, a reflector 604, a light-emitting module 610, a light base 612, a heat dissipation sheet 614, a connection part 616, and an electrical connection element 618. The light-emitting module 610 includes a mounting part 606 and a plurality of light-emitting units 608 located on the mounting part 606. The plurality of light-emitting units 608 may be the light-emitting element or light-emitting device 3 in the above embodiment.

[0045] Each embodiment illustrated in this application is for explaining this application and does not limit the scope of this application. Any easy-to-understand modification or change to this application shall be deemed to fall within the scope of the gist of this application.

Explanation of Reference Numerals

[0046] 1c, 2c Light-emitting element 3, 4 Light-emitting device 11c Substrate 11s Exposed surface 1000c Light-emitting structure 10c Semiconductor stack 100c Hole 101c First semiconductor layer 102c Second semiconductor layer 102s Surface 103c Active layer 1011c First surface 1012c Second surface 1001c Second outer wall 1002c Inner wall 1003c First outer wall 20c First insulating structure ]>201c Surrounding insulating portion 2011c Protrusion 2012c Depression 202c Annular coating area 203c Opening f20c Top s20c Side t20c Bottom 30c Transparent conductive layer 31c, 31c’ First conductive part 32c, 32c’ Second conductive part 33c, 33c’ Third conductive part 301c First outer side 302c First inner side f30c First transparent conductive part f30c1 First outer enclosure s30c Second transparent conductive part s30c1 Second outer enclosure t30c Third transparent conductive part t30c1 Third outer enclosure 40c reflective layer 401c Second outer side 402c Second inner side 403c, 403c' First reflection section 404c, 404c' Second reflection section 405c, 405c' Third reflection section 41c barrier layer 50c Second Insulation Structure 501c First Insulation Opening 502c Second Insulation Opening 503 Encirclement 5031c Protrusion 5032c recess 51c adhesive layer 60c contact layer 600c thimble area 601c First contact part 602c Second contact part 70c Third Insulation Structure 701c first opening 702c second opening 80c First electrode pad 90c Second electrode pad E1 first boundary E2 second boundary D, D' distance G Gap 51 Package substrate 511 First Pad 512 Second pad 53 Insulation part 54 Reflective structure 602 Light Cover 604 Reflector 606 Mounting section 608 Light-emitting unit 610 Light-Emitting Module 612 Light Base 614 Heat dissipation sheet 616 Connection part 618 Electrical connection element

Claims

1. A light-emitting element, A semiconductor structure comprising a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer has a first edge, A reflective structure located on the second semiconductor layer and including its outer edge, A second insulating structure located on the reflective structure and including a first insulating opening that exposes the first semiconductor layer and a second insulating opening that exposes the reflective structure, The semiconductor structure includes a first contact portion that surrounds the semiconductor structure and is electrically in contact with the first semiconductor layer by the first insulating opening, A light-emitting element in which, when viewed from above, the circumference of the first contact portion is greater than the circumference of the active layer.

2. The material further includes a transparent conductive layer located between the semiconductor structure and the reflective structure, The light-emitting element according to claim 1, wherein the transparent conductive layer includes a first outer edge that is closer to the first edge than the outer edge of the reflective structure.

3. The light-emitting element according to claim 1, further comprising a first insulating structure located on the second semiconductor layer and in contact with the first edge.

4. The light-emitting element according to claim 3, wherein the reflective structure covers a part of the first insulating structure.

5. The light-emitting element according to claim 3, further comprising a transparent conductive layer formed on the first insulating structure and the second semiconductor layer, and extending to the first edge to cover the side of the first insulating structure.

6. A third insulating structure is located on the second insulating structure and has a first opening and a second opening on the second semiconductor layer, A first electrode pad positioned on the third insulating structure and electrically connected to the first semiconductor layer by the first opening, The light-emitting element according to claim 1, further comprising a second electrode pad located on the third insulating structure and electrically contacting the second semiconductor layer by the second opening.

7. The light-emitting element according to claim 6, wherein the second insulating structure and / or the third insulating structure includes a Bragg reflector (DBR).

8. The light-emitting element according to claim 6, wherein, in a top view, the shape and / or size of the first electrode pad differs from that of the second electrode pad.

9. It includes a second contact portion located on the second insulating structure and electrically connected to the second semiconductor layer by the second insulating opening, The light-emitting element according to claim 1, wherein the first contact portion surrounds the second contact portion.

10. The light-emitting element according to claim 9, further comprising a third contact portion located on the second insulating structure and electrically insulated from the first contact portion and the second contact portion.

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