Bandpass filter and imaging device

Abstract

This suppresses the increased burden of alignment when mounting bandpass filters with curved shapes. [Solution] The bandpass filter comprises a curved light-transmitting portion, a spectral transmittance control layer provided on the light-transmitting portion, and a support portion extending from the light-transmitting portion and supporting the light-transmitting portion. The light-transmitting portion may be set to a curvature corresponding to the CRA (Chief Ray Angle) of the sensor surface on which the light transmitted through the light-transmitting portion is incident. The support portion may have a flat surface located around the light-transmitting portion. Alignment marks may be located on the support portion.

Description

【Technical Field】 【0001】 The present technology relates to a band - pass filter and an imaging device. Specifically, the present technology relates to a band - pass filter having a curved surface shape and an imaging device. 【Background Art】 【0002】 In order to cope with the reduction in height of a light - receiving device, there is a technology for curving a band - pass filter used for controlling spectral transmittance. At this time, for example, an optical member including a band - pass filter that selectively transmits infrared light in a predetermined wavelength range is disposed on the light - receiving surface side of a light - receiving portion that receives infrared light from an object, and a technology in which the light incident surface of the band - pass filter has a concave shape is disclosed (see, for example, Patent Document 1). 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 International Publication No. 2019 / 163761 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 However, in the above - mentioned conventional technology, in the case of a band - pass filter with a concave light - incident surface, there is a risk of increasing the burden of alignment during its mounting. 【0005】 The present technology has been created in view of such a situation, and an object thereof is to suppress an increase in the burden of alignment during the mounting of a band - pass filter having a curved surface shape. 【Means for Solving the Problems】 【0006】 This technology was developed to solve the aforementioned problems, and its first aspect is a bandpass filter comprising a curved light-transmitting portion with uniform thickness, a spectral transmittance control layer provided on the light-transmitting portion, and a support portion extending from the light-transmitting portion and supporting the light-transmitting portion. This results in the bandpass filter having a curved light-transmitting portion being supported via the support portion. 【0007】 Furthermore, in the first aspect, the light-transmitting portion may be set to a curvature corresponding to the CRA (Chief Ray Angle) of the sensor surface to which the light transmitted through the light-transmitting portion is incident. This has the effect of suppressing the shift in the spectral characteristics of the bandpass filter. 【0008】 Furthermore, in the first aspect, the support portion may include a vertical portion that supports the light-transmitting portion in the vertical direction, and a horizontal portion that extends horizontally from the lower end of the vertical portion. This increases the height of the light-transmitting portion while providing support for it. 【0009】 Furthermore, in the first aspect, the light-transmitting portion and the support portion may have a seamless structure. This results in the light-transmitting portion and the support portion being integrated into one unit. 【0010】 Furthermore, in the first aspect, the light-transmitting portion and the support portion may be integrally molded. This defines the positional relationship between the light-transmitting portion and the support portion, while also providing the effect of extending the support portion from the light-transmitting portion. 【0011】 Furthermore, in the first aspect, the material of the light-transmitting portion and the material of the support portion may be the same. This results in the light-transmitting portion and the support portion being integrally molded. 【0012】 Furthermore, in the first aspect, the material of the light-transmitting portion and the material of the support portion may be transparent resin. This results in the light-transmitting portion being formed into a curved shape while the light-transmitting portion and the support portion are integrated together. 【0013】 Furthermore, in the first aspect, the light-transmitting portion may contain a dye or pigment that absorbs light in a specific wavelength band. This allows for the integral molding of the light-transmitting portion and the support portion, while improving the controllability of the spectral transmittance of the bandpass filter. 【0014】 Furthermore, in the first aspect, the support portion may include a flat surface located around the light-transmitting portion. This provides the effect of stabilizing the support of a bandpass filter having a curved light-transmitting portion. 【0015】 Furthermore, in the first aspect, the flat surface located around the light-transmitting portion may be used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion. This has the effect of facilitating the determination of the positional accuracy of the bandpass filter with respect to the incident surface into which the light transmitted through the light-transmitting portion is incident. 【0016】 Furthermore, the first side surface may be provided with alignment marks located on the support portion. This facilitates the alignment of the bandpass filter with respect to the incident surface into which light transmitted through the light-transmitting portion enters. 【0017】 Furthermore, in the first aspect, the support portion may suspend and support the light-transmitting portion. This results in the bandpass filter being supported at a distance from the incident surface on which the light transmitted through the light-transmitting portion enters. 【0018】 Furthermore, in the first aspect, the thickness of the light-transmitting portion may be 0.5 mm or less. This provides a curved shape to the light-transmitting portion of the bandpass filter while also reducing the height of the bandpass filter. 【0019】 Furthermore, in the first aspect, the maximum inclination angle of the curved surface of the light-transmitting portion may be 45° or less. This suppresses an increase in the thickness of the light-transmitting portion while forming a curved shape in the light-transmitting portion. 【0020】 Also, on the first side, the spectral transmittance control layer may be a dielectric multilayer film. This brings about the effect of improving the uniformity of the spectral transmittance control layer on the curved light transmission portion. 【0021】 Also, on the first side, the support portion may extend horizontally from the end of the light transmission portion. This brings about the effect of supporting the light transmission portion while enabling the support portion to be made shallower. 【0022】 Also, on the first side, the sag amount of the light transmission portion may be larger than the thickness of the support portion. This brings about the effect of enabling the support portion to be made shallower while causing the light transmission portion to be curved. 【0023】 Also, on the second side, an imaging device includes a pixel array portion in which pixels are arranged in a matrix in the row direction and the column direction, an optical system that forms an optical image on the pixel array portion, and a band-pass filter provided between the pixel array portion and the optical system. The band-pass filter includes a curved light transmission portion having a uniform thickness, a spectral transmittance control layer provided on the light transmission portion, and a support portion extending from the light transmission portion and supporting the light transmission portion. This brings about the effect of reducing the height of the imaging device while supporting the band-pass filter on the pixel array portion via the support portion. 【0024】 Also, on the second side, the angle of incidence of the principal ray to the spectral transmittance control layer may be 20° or less. This brings about the effect of suppressing a decrease in the spectral characteristics of the band-pass filter. 【0025】 Also, on the second side, the imaging device may include a sensor chip on which the pixel array portion is formed, and the band-pass filter may be supported on the sensor chip via the support portion. This brings about the effect of covering the pixel array portion with the band-pass filter while supporting the band-pass filter on the pixel array portion via the support portion. 【0026】 Furthermore, in a second aspect, the bandpass filter may constitute a CSP (Chip Size Package) together with the sensor chip. This results in the bandpass filter covering the sensor chip while being supported on the sensor chip. [Brief explanation of the drawing] 【0027】 [Figure 1] This figure shows an example configuration of a bandpass filter according to the first embodiment. [Figure 2] This is a cross-sectional view showing the relationship between the bandpass filter and the sensor surface according to the first embodiment. [Figure 3] This figure shows an example of the spectral characteristics of a bandpass filter according to the first embodiment. [Figure 4] This figure shows another example of the spectral characteristics of the bandpass filter according to the first embodiment. [Figure 5] This figure shows an example of the curved surface shape of a bandpass filter according to the first embodiment. [Figure 6] This figure shows another example of the curved surface shape of the bandpass filter according to the first embodiment. [Figure 7] This figure shows an example of the characteristics of the coating layer of a bandpass filter according to the first embodiment. [Figure 8] This is a cross-sectional view showing a first example of a method for manufacturing a bandpass filter according to the first embodiment. [Figure 9] This figure shows an example of the configuration of the light-transmitting portion and support portion of the bandpass filter according to the first embodiment during injection molding. [Figure 10] This figure shows the heat cycle during injection molding of the light-transmitting portion and support portion of the bandpass filter according to the first embodiment. [Figure 11] This is a cross-sectional view showing a second example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. [Figure 12]This is a cross-sectional view showing a third example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. [Figure 13] This is a cross-sectional view showing a third example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. [Figure 14] This is a cross-sectional view showing a fourth example of a method for manufacturing a bandpass filter according to the first embodiment. [Figure 15] This is a cross-sectional view showing an example of a coating method for a bandpass filter according to the first embodiment. [Figure 16] This figure shows an example configuration of a bandpass filter according to the second embodiment. [Figure 17] This is a cross-sectional view showing the relationship between the bandpass filter and the sensor surface according to the second embodiment. [Figure 18] This is a cross-sectional view showing an example of the configuration of an imaging device according to the third embodiment. [Figure 19] This is a cross-sectional view showing an example of the configuration of an imaging device according to the fourth embodiment. [Figure 20] This is a cross-sectional view showing an example of the configuration of an imaging device according to the fifth embodiment. [Figure 21] This is a cross-sectional view showing an example of the configuration of an imaging device according to the sixth embodiment. [Figure 22] This is a cross-sectional view showing an example of a method for manufacturing an imaging device according to the sixth embodiment. [Figure 23] This is a cross-sectional view showing an example of a method for manufacturing an imaging device according to the sixth embodiment. [Figure 24] This is a cross-sectional view showing an example of a method for manufacturing an imaging device according to the sixth embodiment. [Figure 25] This figure shows an example configuration of a bandpass filter according to the seventh embodiment. [Figure 26] This figure shows an example configuration of a bandpass filter according to the eighth embodiment. [Figure 27] This is a cross-sectional view showing an example of the configuration of an imaging device according to the ninth embodiment. [Figure 28]This is a plan view showing an example of the configuration of an imaging device according to the ninth embodiment. [Figure 29] This is a cross-sectional view showing an example of the configuration of an imaging device according to the tenth embodiment. [Figure 30] This figure shows an example configuration of a bandpass filter according to the 11th embodiment. [Figure 31] This figure shows an example configuration of a bandpass filter according to the twelfth embodiment. [Figure 32] This figure shows an example configuration of a bandpass filter according to the 13th embodiment. [Figure 33] This is a cross-sectional view showing an example of the configuration of an imaging device according to the 14th embodiment. [Figure 34] This is a cross-sectional view showing an example of the configuration of an imaging device according to the 15th embodiment. [Figure 35] This is a block diagram illustrating a schematic configuration example of a vehicle control system. [Figure 36] This is an explanatory diagram showing an example of the installation location of the imaging unit. [Modes for carrying out the invention] 【0028】 The following describes the embodiments for implementing this technology. The description will proceed in the following order. 1. First Embodiment (An example in which a support portion extending from a curved light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter) 2. Second Embodiment (An example in which a support portion extending from a lens-shaped light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter) 3. Third Embodiment (An example in which a bandpass filter, provided with a support portion extending from a curved light-transmitting portion, is mounted on a mounting substrate on which a sensor is mounted via the support portion) 4. Fourth Embodiment (An example in which a bandpass filter, provided with a support portion extending from a curved light-transmitting portion, is mounted on a sensor) 5. Fifth Embodiment (An example in which a bandpass filter, which has a support portion extending from a curved light-transmitting portion, is provided with irregularities used for alignment with a sensor) 6. Sixth Embodiment (An example of a bandpass filter with a support portion extending from a curved light-transmitting portion integrated into a CSP together with a sensor chip) 7. Seventh Embodiment (An example in which a support portion extending from a curved light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter, and grooves are formed in the support portion) 8. Eighth Embodiment (An example in which a support portion extending from a curved light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter, and a light-shielding film is formed on the support portion) 9. A ninth embodiment (an example in which a bandpass filter, provided with a support portion extending from a curved light-transmitting portion, is mounted on a mounting substrate to which a sensor chip is wire-connected, via the support portion, and a lens driven by an actuator is provided on the bandpass filter) 10. Tenth Embodiment (An example in which a bandpass filter, provided with a support portion extending from a curved light-transmitting portion, is mounted on a mounting substrate to which a sensor chip is bump-connected via the support portion, and a lens driven by an actuator is provided on the bandpass filter) 11. Eleventh Embodiment (An example in which a support portion extending horizontally from a curved light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter) 12. Twelfth Embodiment (An example in which a support portion extending horizontally from a lens-shaped light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter) 13. Thirteenth Embodiment (An example in which a support portion extending in the direction of light incidence from a curved light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter) 14. Fourteenth Embodiment (An example in which a bandpass filter, having a support portion extending horizontally from a curved light-transmitting portion, is mounted on a mounting board to which a sensor chip is wire-connected via the support portion, and a lens driven by an actuator is provided on the bandpass filter) 15. Fifteenth Embodiment (An example in which a bandpass filter, having a support portion extending horizontally from a curved light-transmitting portion, is mounted on a mounting substrate to which a sensor chip is bump-connected via the support portion, and a lens driven by an actuator is provided on the bandpass filter) 16. Examples of applications to mobile devices 【0029】 <1. First Embodiment> Figure 1 shows an example configuration of a bandpass filter according to the first embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 100, and b is a plan view showing an example configuration of the bandpass filter 100. Figure a shows an example configuration cut along the line A1-A2 in figure b. Furthermore, the drawings used in the following explanation may differ in scale and shape from the actual structure in order to make each configuration easier to understand. 【0030】 In the figure, the bandpass filter 100 controls the spectral transmittance. The bandpass filter 100 comprises a spectral region RA and a support region RB. The support region RB is provided around the spectral region RA. The spectral region RA is provided with a curved light-transmitting portion 101 of uniform thickness. The support region RB is provided with a support portion 102. By making the thickness of the light-transmitting portion 101 uniform, the progress of cooling and solidification during molding of the light-transmitting portion 101 can be made uniform, and the shape accuracy of the light-transmitting portion 101, such as warping, can be improved. Note that uniform thickness does not necessarily mean that the thickness is exactly equal; the thickness may be substantially uniform, or there may be variations in thickness due to manufacturing variations in the manufacturing process. 【0031】 The light-transmitting portion 101 can be set to a curvature corresponding to the CRA (Chief Ray Angle) of the sensor surface to which light transmitted through the light-transmitting portion 101 is incident. In this case, the curved shape of the light-transmitting portion 101 may have an inflection point. For example, the curved shape of the light-transmitting portion 101 may change from concave to convex from the center to the outer circumference. Specifically, the curved shape of the transmission portion 101 may change in a seagull shape from the center to the outer circumference. An anti-reflective layer 104 is formed on the light incident surface of the light-transmitting portion 101. A spectral transmittance control layer 103 is formed on the light emission surface of the light-transmitting portion 101. 【0032】 The spectral transmittance control layer 103 controls the spectral transmittance. The anti-reflective layer 104 prevents reflection of light incident on the light-transmitting portion 101. The spectral transmittance control layer 103 and the anti-reflective layer 104 may be dielectric multilayer films. 【0033】 The support portion 102 extends from the light-transmitting portion 101 and supports the light-transmitting portion 101. The light-transmitting portion 101 and the support portion 102 may be integrally molded. Here, the support portion 102 may be constructed by extending the base material constituting the light-transmitting portion 101 around the light-transmitting portion 101. In this case, the light-transmitting portion 101 and the support portion 102 may have a seamless structure. Also, the lower end of the support portion 102 may be located above the lower end of the light-transmitting portion 101. Furthermore, the material of the light-transmitting portion 101 and the material of the support portion 102 may be the same. For example, the material of the light-transmitting portion 101 and the material of the support portion 102 may be a transparent resin. Transparent resins include, for example, acrylic, polycarbonate, polyethylene, polypropylene, or polyester. The light-transmitting portion 101 may contain a dye or pigment that absorbs light in a specific wavelength band. 【0034】 The support portion 102 can have a shape suitable for achieving precise positioning of the light-transmitting portion 101. By integrally molding the light-transmitting portion 101 and the support portion 102, the position of the light-transmitting portion 101 relative to the support portion 102 can be made highly precise. Therefore, by positioning the support portion 102, the light-transmitting portion 101 can be positioned with high precision. Here, the end of the support portion 102 may be used as a reference point for positioning the light-transmitting portion 101. In this case, the distance from the light-transmitting portion 101 to the end of the support portion 102 can be set to a predetermined value. 【0035】 The support portion 102 may include a vertical portion 102A and a horizontal portion 102B. The vertical portion 102A supports the light-transmitting portion 101 in the vertical direction. The horizontal portion 102B extends horizontally from the lower end of the vertical portion 102A. In this case, the support portion 102 can suspend and support the light-transmitting portion 101. The lower surface MK of the horizontal portion 102B can be a flat surface. In this case, the flat surface of the lower surface MK of the horizontal portion 102B may be used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion 101. The horizontal portion 102B may also be a pedestal shape with an opening formed corresponding to the position of the light-transmitting portion 101. 【0036】 Alignment marks 105 are provided on the horizontal section 102B. The alignment marks 105 can be used to align the light-transmitting section 101. The alignment marks 105 may be placed at the four corners of the bandpass filter 100. The reflectance of the alignment marks 105 may be different from that of the horizontal section 102B. Alternatively, a step may be formed on the horizontal section 102B along the contour of the alignment marks 105. 【0037】 Figure 2 is a cross-sectional view showing the relationship between the bandpass filter and the sensor surface according to the first embodiment. 【0038】 In the figure, the sensor chip 111 is provided with a sensor region 112. The sensor region 112 may be provided with a pixel array. The pixel array contains pixels and pixel transistors arranged in a matrix along the row and column directions. Photodiodes can be formed in the pixels. The pixel transistors may include a reset transistor for resetting the pixels, a selection transistor for selecting pixels, a transfer transistor for transferring charge accumulated in the pixels, and an amplifier transistor that forms a source follower with the pixels. 【0039】 A color filter 114 is formed on the sensor area 112 for each pixel. An on-chip lens 115 is formed on the color filter 114 for each pixel. The materials for the color filter 114 and the on-chip lens 115 can be, for example, insulating films such as SiO2, SiN, or SiCN, or transparent resins such as acrylic or polycarbonate. The color filter 114 may contain pigments. The color filter 114 may, for example, form a Bayer array or a quad Bayer array. The color filter 114 may include an RGB filter, a complementary color filter, or a white filter. 【0040】 A bandpass filter 100 is placed on the sensor chip 111. At this time, the light LI incident on the sensor region 112 is spectrally controlled by the bandpass filter 100. The curvature of the light-transmitting portion 101 can be set according to the CRA with respect to the incident surface of the sensor region 112. The thickness HA of the light-transmitting portion 101 is set to 0.5 mm or less. The maximum inclination angle of the curved surface of the light-transmitting portion 101 is set to 45° or less. 【0041】 Alignment marks 110 may be formed on the sensor chip 111. The alignment marks 110 can be used to align the bandpass filter 100. The alignment marks 110 can be compared with alignment marks 105. By aligning the alignment marks 105 and the alignment marks 110, the bandpass filter 100 can be aligned on the sensor chip 111. 【0042】 Figure 3 shows an example of the spectral characteristics of a bandpass filter according to the first embodiment. In this figure, an IR (Infrared) cut filter is assumed, but for example, when infrared light is used for sensing applications, a bandpass filter that transmits only infrared light may also be used. 【0043】 In figure a, the spectral characteristics of the light-transmitting section 101 are assumed to have a transmittance of 80% or more in the infrared region. At this time, as shown in figure b, the spectral characteristics of the spectral transmittance control layer 103 are set so that the transmittance in the infrared region is approximately 0%. As a result, as shown in figure c, the spectral characteristics of the bandpass filter 100 are set so that the visible region is transmitted and the infrared region is blocked. 【0044】 Figure 4 shows another example of the spectral characteristics of the bandpass filter according to the first embodiment. 【0045】 In figure a, the spectral characteristics of the light-transmitting section 101 are assumed to have a transmittance of 80% or more in the infrared region. Here, by mixing a dye or pigment that absorbs light in the 700-800 nm band into the light-transmitting section 101, a shielding band B1 in the 700-800 nm band is formed in the spectral characteristics of the light-transmitting section 101. At this time, as shown in figure b, the spectral characteristics of the spectral transmittance control layer 103 are set so that the transmittance in the infrared region is approximately 0%. Here, the spectral characteristics of the spectral transmittance control layer 103 may include a transmission band B2 in the ultraviolet region. As a result, as shown in figure c, the spectral characteristics of the bandpass filter 100 are set so that the visible region is transmitted and the infrared region is blocked. Here, by forming a shielding band B1 of 700-800 nm in the spectral characteristics of the light-transmitting section 101, even if the spectral characteristics of the spectral transmittance control layer 103 shift to the longer wavelength side due to oblique incidence of light LI, the shift can be compensated for by the absorption of the light-transmitting section 101. Therefore, the load on the spectral transmittance control layer 103 can be reduced, improving the robustness of the bandpass filter 100 while also reducing costs. 【0046】 Figure 5 shows an example of the curved surface shape of a bandpass filter according to the first embodiment. In the figure, a is a diagram showing the relationship between the filter half-diagonal length r and the sag amount Z, b is a diagram showing the relationship between the corresponding image height on the sensor and the tilt angle of the bandpass filter 100, and c is a diagram showing the relationship between the corresponding image height on the sensor and the incident angle. 【0047】 In the figure, at point a, for example, the sag amount Z of the bandpass filter 100 is set to 0.5 mm or less. The sag amount Z (mm) can be given by the following formula as a function of the filter half-diagonal length r (mm). 【0048】 Z=cr 2 / (1+√(1-(1+k)c 2 r 2 )) +α1r 2 +α2r 4 +α3r 6 +··· 【0049】 However, c(1 / mm) is the curvature of the filter, k is the conic coefficient, α1(1 / mm), α2(1 / mm) 3 ), α3 (1 / mm 5 ) is the aspherical coefficient. 【0050】 In this case, for example, c can be given as c=8.94910E-04, k=1, α1=0, α2=2.00676E-04, α3=-1.20536E-06, and α4=0. 【0051】 In the figure, at point b, when the filter half-diagonal length r and the sag amount Z have the relationship shown in point a, the bandpass filter 100 has a maximum tilt angle of 10°. This allows for a reduction in the incident angle to the bandpass filter 100. 【0052】 In figure c, by making the light-transmitting portion 101 curved, the filter incidence angle FK1 is reduced compared to the sensor incidence angle SK1. In this case, the filter incidence angle FK1 is reduced by approximately 10° compared to the sensor incidence angle SK1. 【0053】 Figure 6 shows another example of the curved surface shape of the bandpass filter according to the first embodiment. In the figure, a is a diagram showing the relationship between the filter half-diagonal length r and the sag amount Z, b is a diagram showing the relationship between the corresponding image height on the sensor and the tilt angle of the bandpass filter 100, and c is a diagram showing the relationship between the corresponding image height on the sensor and the incident angle. 【0054】 In the figure, at point a, for example, the curved shape of the bandpass filter 100 is made to resemble a seagull. In this case, the curved shape of the light-transmitting portion 101 changes from concave to convex from the center outward. 【0055】 Here, the sag amount Z of the bandpass filter 100 can be set to 0.45 mm, which reduces the sag amount Z by 10% compared to the curved shape in Figure 5. In this case, for example, c can be given as c=-2.54869E-02, k=1, α1=0, α2=5.32571E-04, α3=-3.61495E-06, and α4=0. 【0056】 In the figure, at point b, when the filter half-diagonal length r and the sag amount Z have the relationship shown in point a, the bandpass filter 100 has a maximum tilt angle of 10°. This allows for a reduction in the incident angle to the bandpass filter 100. 【0057】 In figure c, by making the light-transmitting portion 101 a curved shape resembling a seagull, the filter incidence angle FK2 is reduced compared to the sensor incidence angle SK2. In this case, the filter incidence angle FK2 is reduced by approximately 10° compared to the sensor incidence angle SK2. Here, an incidence angle of 20° or less can be achieved at the total image height, and since the variation in the spectral characteristics of the dielectric multilayer film is small when it is 20° or less, image quality degradation can be suppressed. 【0058】 Figure 7 shows an example of the characteristics of the coating layer of the bandpass filter according to the first embodiment. 【0059】 In figure a, the reflectance of the anti-reflective layer 104 is set to be approximately 0% in the visible region. 【0060】 In figure b, the spectral characteristics of the spectral transmittance control layer 103 are set to transmit light in the visible region and block light in the infrared region. 【0061】 Figure 8 is a cross-sectional view showing a first example of a method for manufacturing the light-transmitting part and support part of a bandpass filter according to the first embodiment, Figure 9 is a diagram showing an example of the configuration of the light-transmitting part and support part of a bandpass filter according to the first embodiment during injection molding, and Figure 10 is a diagram showing the heat cycle during injection molding of the light-transmitting part and support part of a bandpass filter according to the first embodiment. In Figure 9, a is a cross-sectional view showing an example of the configuration of the light-transmitting part and support part of a bandpass filter during injection molding, and in Figure 9, b is a plan view showing an example of the configuration of the light-transmitting part and support part of a bandpass filter during injection molding. In Figure 9, a shows a connected body of two light-transmitting parts and support parts of a bandpass filter, and in Figure 9, b shows a connected body of four light-transmitting parts and support parts of a bandpass filter. 【0062】 In Figure 8d and Figure 9, during injection molding of the light-transmitting portion 101 and the support portion 102, the support portion 102 extending from the light-transmitting portion 101 is connected longitudinally via the runner 100A and the gate 100B, and the runner 100A is connected transversely via the sprue 100C. 【0063】 At this time, as shown in Figure 8a, a lower surface pattern PA1 corresponding to the lower surfaces of the light-transmitting portion 101, support portion 102, runner 100A, gate 100B, and sprue 100C is formed on mold KN1. An upper surface pattern PA2 corresponding to the upper surfaces of the light-transmitting portion 101, support portion 102, runner 100A, gate 100B, and sprue 100C is formed on mold KN2. At this time, by bringing molds KN1 and KN2 into contact in the vertical direction, spaces SP corresponding to the shapes of the light-transmitting portion 101, support portion 102, runner 100A, gate 100B, and sprue 100C can be formed within molds KN1 and KN2. 【0064】 Then, as shown in Figure 8b, resin JS is filled into the space SP with molds KN1 and KN2 in contact in the vertical direction. 【0065】 Next, as shown in c in Figure 8, the resin JS filled in the space SP is cooled, and the connected body of the light-transmitting part 101, support part 102, runner 100A, gate 100B, and sprue 100C is injection molded. 【0066】 Next, as shown in d in Figure 8, the molds KN1 and KN2 are separated vertically, and the connected assembly of the light-transmitting part 101, support part 102, runner 100A, gate 100B, and sprue 100C is removed. 【0067】 At this time, as shown in Figure 10, during the waiting period K1, the temperatures of the molds KN1 and KN2 are raised from the low-temperature set temperature T1 to the high-temperature set temperature T2. The high-temperature set temperature T2 is set to a value greater than the glass transition temperature Tg of the resin JS. Then, during the waiting period K2, the resin JS is filled into the space SP while the temperature of the molds KN1 and KN2 is maintained at the high-temperature set temperature T2. Next, during the clamping and cooling period K3, the temperatures of the molds KN1 and KN2 are lowered from the high-temperature set temperature T2 to the low-temperature set temperature T1. Next, during the removal period K4, the connected body of the light-transmitting part 101, support part 102, runner 100A, gate 100B, and sprue 100C is removed from the molds KN1 and KN2. This temperature cycle improves the fluidity of the resin JS in the space SP, and makes it possible to make the bandpass filter 100 thinner while making the thickness of the bandpass filter 100 uniform. 【0068】 Figure 11 is a cross-sectional view showing a second example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. 【0069】 In figure a, molds KN1 and KN2 are separated vertically. Then, as shown in figure b, resin JS is injected between molds KN1 and KN2 while they are separated vertically. 【0070】 Next, as shown in c in the same figure, molds KN1 and KN2 are brought into contact in the vertical direction with resin JS injected between them. 【0071】 Next, as shown in d in the same figure, the resin JS filled in the space SP is clamped and cooled, and the connected body of the light-transmitting part 101, support part 102, runner 100A, gate 100B, and sprue 100C is injection-compressed. Then, as shown in d in Figure 8, the molds KN1 and KN2 are separated vertically, and the connected body of the light-transmitting part 101, support part 102, runner 100A, gate 100B, and sprue 100C is removed. Here, by injecting resin JS between molds KN1 and KN2 while molds KN1 and KN2 are separated vertically, and then bringing molds KN1 and KN2 into contact vertically to clamp and cool the resin JS, it is possible to make the bandpass filter 100 thinner. 【0072】 Figures 12 and 13 are cross-sectional views showing a third example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. 【0073】 In Figures 12a and 12b, a lower surface pattern PA3 is formed on mold KN3, corresponding to the lower surfaces of multiple light-transmitting portions 101 and support portions 102. A upper surface pattern PA4 is formed on mold KN4, corresponding to the upper surfaces of multiple light-transmitting portions 101 and support portions 102. 【0074】 Then, as shown in Figure 12a, resin JS is dispensed onto mold KN3 via dispenser NZ. 【0075】 Next, as shown in Figure 12b, mold KN4 is positioned on mold KN3, which has resin JS dispensed. 【0076】 Next, as shown in c in Figure 12, molds KN3 and KN4 are brought close to each other, and resin JS is sandwiched between molds KN3 and KN4 so that it spreads between them. Then, by heating and curing the resin JS, a connected body of multiple light-transmitting parts 101 and support parts 102 is cast. 【0077】 Next, as shown in Figure 13a, the molds KN3 and KN4 are separated vertically, and then, as shown in Figure 13b, the connected body of the multiple light-transmitting parts 101 and support parts 102 is removed. Then, as shown in Figure 13c, the connected body of the multiple light-transmitting parts 101 and support parts 102 is solidified into pieces. Here, before the resin JS is heat-cured, the resin JS is fluid, so it can be smoothly distributed between the molds KN3 and KN4, making it easier to thin the bandpass filter 100. 【0078】 Figure 14 is a cross-sectional view showing a fourth example of a method for manufacturing the light-transmitting portion and support portion of a bandpass filter according to the first embodiment. 【0079】 In Figure 14a, in the fourth example of the method for manufacturing the bandpass filter 100, mold KN4' is provided instead of mold KN4 in Figure 13. A top surface pattern PA4 corresponding to the upper surfaces of the multiple light-transmitting parts 101 and support parts 102 is formed on mold KN4'. Mold KN4' can be made of a material that is transparent to ultraviolet light and may be made of glass. Then, resin JS' is dispensed onto mold KN3. At this time, ultraviolet-curing resin can be used for resin JS'. 【0080】 Next, as shown in Figure 14b, mold KN4' is positioned on mold KN3, which has resin JS' dispensed into it. Then, molds KN3 and KN4' are brought close to each other, and resin JS' is sandwiched between molds KN3' and KN4 so that it spreads evenly between them. 【0081】 Next, as shown in c in Figure 14, ultraviolet UV light is irradiated onto the resin JS' through the mold KN4' to cure the resin JS' with ultraviolet light. At this time, it is not necessary to heat the resin JS' through the molds KN3 and KN4' to cure the resin JS', and the decrease in transfer accuracy caused by the difference in thermal expansion of the molds KN3 and KN4' can be suppressed. 【0082】 Figure 15 is a cross-sectional view showing an example of a coating method for a bandpass filter according to the first embodiment. 【0083】 In the figure, a chamber CB contains a connected assembly of multiple light-transmitting sections 101 and support sections 102, a heater HT, and a deposition source JG. The multiple light-transmitting sections 101 and support sections 102 can be positioned facing the deposition source JG. The chamber CB can be evacuated. Then, deposition particles JP are scattered from the deposition source JG and coated onto the light-transmitting sections 101. At this time, the deposition source JG may be heated or irradiated with an electron beam in order to scatter the deposition particles JP from the deposition source JG. To improve the adhesion and heat resistance of the coating film, the light-transmitting sections 101 may be heated to about 60 to 110°C with the heater HT. This coating method may be used to form the spectral transmittance control layer 103 of the bandpass filter 100, or to form the anti-reflective layer 104. In the formation of the spectral transmittance control layer 103, a dielectric multilayer film of about 20 to 40 layers can be deposited. In forming the anti-reflective layer 104, a dielectric multilayer film of about 50 to 10 layers can be deposited. 【0084】 Furthermore, in order to selectively coat the light-transmitting portion 101, a mask covering the support portion 102 may be installed in the scattering path of the deposited particles JP. In addition, sputtering may be used in addition to vapor deposition for the formation of the spectral transmittance control layer 103 or the anti-reflective layer 104. 【0085】 By integrating multiple light-transmitting parts 101 and support parts 102 in an array, applying a coating, and then solidifying them, the manufacturing efficiency of the bandpass filter 100 can be improved, and the cost of the bandpass filter 100 can be reduced. 【0086】 As described above, in the first embodiment, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. This allows the bandpass filter 100 having the curved light-transmitting portion 101 to be supported on the sensor surface via the support portion 102. Therefore, the curved light-transmitting portion 101 can be positioned based on the positioning of the support portion 102, making it easier to achieve positional accuracy of the curved light-transmitting portion 101. At this time, positional accuracy of the curved light-transmitting portion 101 can be achieved by positioning the support portion 102 while referring to the alignment mark 105. In addition, by setting the curvature of the light-transmitting portion 101 according to the CRA of the sensor surface, fluctuations in the spectral characteristics of the bandpass filter 100 can be mitigated. 【0087】 <2. Second Embodiment> In the first embodiment described above, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. In this second embodiment, a support portion extending from the lens-shaped light-transmitting portion and supporting the light-transmitting portion is provided on the bandpass filter. 【0088】 Figure 16 shows an example configuration of a bandpass filter according to the second embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 200, and b is a plan view showing an example configuration of the bandpass filter 200. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0089】 In the figure, the bandpass filter 200 controls the spectral transmittance. The bandpass filter 200 comprises a spectral region RA and a support region RB. The support region RB is provided around the spectral region RA. A lens-shaped light-transmitting portion 201 is provided in the spectral region RA. A support portion 202 is provided in the support region RB. 【0090】 The upper surface of the light-transmitting portion 201 can be set to a curvature corresponding to the CRA of the sensor surface to which light transmitted through the light-transmitting portion 201 is incident. The lower surface of the light-transmitting portion 201 can be flattened. In this case, the curved shape of the upper surface of the light-transmitting portion 201 may have an inflection point. For example, the curved shape of the upper surface of the light-transmitting portion 201 may change from concave to convex from the center to the outer circumference. Specifically, the curved shape of the upper surface of the light-transmitting portion 201 may change in a seagull shape from the center to the outer circumference. An anti-reflective layer 204 is formed on the light incident surface of the light-transmitting portion 201. A spectral transmittance control layer 203 is formed on the light emission surface of the light-transmitting portion 201. 【0091】 The spectral transmittance control layer 203 controls the spectral transmittance. The anti-reflective layer 204 prevents reflection of light incident on the light-transmitting portion 201. The spectral transmittance control layer 203 and the anti-reflective layer 204 may be dielectric multilayer films. 【0092】 The support portion 202 extends from the light-transmitting portion 201 and supports the light-transmitting portion 201. The light-transmitting portion 201 and the support portion 202 may be integrally molded. In this case, the light-transmitting portion 201 and the support portion 202 may have a seamless structure. The material of the light-transmitting portion 201 and the material of the support portion 202 may be the same. For example, the material of the light-transmitting portion 201 and the material of the support portion 202 may be transparent resin. The light-transmitting portion 201 may contain a dye or pigment that absorbs light in a specific wavelength band. 【0093】 The support portion 202 supports the light-transmitting portion 201. In this case, the support portion 202 can be shaped to be suitable for achieving precise positioning of the light-transmitting portion 201. Here, the end of the support portion 202 may be used as a reference point for positioning the light-transmitting portion 201. In this case, the distance from the light-transmitting portion 201 to the end of the support portion 202 can be set to a default value. 【0094】 Alignment marks 205 are provided on the support portion 202. The alignment marks 205 can be used to align the light-transmitting portion 201. The alignment marks 205 may be placed at the four corners of the bandpass filter 200. The reflectivity of the alignment marks 205 may be different from that of the support portion 202. Alternatively, a step may be formed on the support portion 202 along the contour of the alignment marks 205. 【0095】 Figure 17 is a cross-sectional view showing the relationship between the bandpass filter and the sensor surface according to the second embodiment. 【0096】 In the figure, a bandpass filter 200 is placed on the sensor chip 111. At this time, the light LI incident on the sensor region 112 is spectrally controlled by the bandpass filter 200. Here, the curvature of the upper surface of the light-transmitting portion 201 is set according to the CRA with respect to the incident surface of the sensor region 112. The thickness of the light-transmitting portion 201 is set to 0.5 mm or less. The maximum inclination angle of the curved surface of the light-transmitting portion 201 is set to 45° or less. Here, by forming the light-transmitting portion 201 in a lens shape, the angle of light incident on the spectral transmittance control layer 203 can be reduced, and the spectral characteristics of the bandpass filter 200 can be improved. Furthermore, the spectral transmittance control layer 203 can be formed on a flat surface or a surface with small curvature, and variations in the thickness of the spectral transmittance control layer 203 can be suppressed. 【0097】 Thus, in the second embodiment described above, a support portion 202 extending from the lens-shaped light-transmitting portion 201 and supporting the light-transmitting portion 201 is provided on the bandpass filter 200. This allows the curved light-transmitting portion 201 to be positioned based on the positioning of the support portion 202, making it easier to achieve positional accuracy for the lens-shaped light-transmitting portion 201. Furthermore, by setting the lens shape of the light-transmitting portion 101 according to the CRA of the sensor surface, fluctuations in the spectral characteristics of the bandpass filter 200 can be mitigated. 【0098】 <3. Third Embodiment> In the first embodiment described above, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. In this third embodiment, the bandpass filter, which is provided with a support portion extending from the curved light-transmitting portion 101, is mounted on a mounting substrate on which a sensor is mounted via the support portion. 【0099】 Figure 18 is a cross-sectional view showing an example of the configuration of an imaging device according to the third embodiment. 【0100】 In the figure, the imaging device comprises a bandpass filter 300, a sensor chip 111, and a mounting substrate 511. The bandpass filter 300 includes a support portion 302 instead of the support portion 102 of the first embodiment described above. The other configurations of the bandpass filter 300 in the third embodiment are the same as those of the bandpass filter 100 in the first embodiment described above. 【0101】 The bandpass filter 300 is fixed onto the mounting substrate 511 via a support portion 302. The support portion 302 can be bonded to the mounting substrate 511 via an adhesive layer 106. 【0102】 Wiring 512 and land electrodes 514 are formed on the mounting substrate 511. The wiring 512 is connected to the land electrodes 514. Vias for interlayer connection of the wiring 512 may be formed on the mounting substrate 511. A cavity 513 capable of housing the sensor chip 111 is also formed on the mounting substrate 511. The land electrodes 514 can be placed on the bottom surface of the cavity 513. 【0103】 Pad electrodes 116 are formed on the sensor chip 111. The sensor chip 111 is flip-chip mounted onto the mounting substrate 511 via solder balls 117. At this time, the sensor chip 111 is housed in the cavity 513, and the pad electrodes 116 are connected to the land electrodes 514 via the solder balls 117. 【0104】 The support portion 302 supports the bandpass filter 300 on the sensor chip 111 at intervals. In this case, the support portion 302 can be configured such that the cavity 513 housing the sensor chip 111 is covered by the bandpass filter 300. For example, the support portion 302 may be configured by bending in a stepped manner around the light-transmitting portion 101. In this case, the cavity 513 housing the sensor chip 111 can be sealed with the bandpass filter 300, and the sensor chip 111 can be sealed without glass. 【0105】 As described above, in the third embodiment, a bandpass filter 300, which has a support portion 302 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 511 on which a sensor chip 111 is mounted, via the support portion 302. This eliminates the need for a frame to mount the bandpass filter 300 on the mounting substrate 511, and allows the bandpass filter 300 to be spaced apart on the sensor chip 111. Therefore, it is possible to reduce the height of the imaging device, facilitate the positional accuracy of the curved light-transmitting portion 101, and suppress the increase in the number of parts of the imaging device, thereby reducing costs. 【0106】 In the third embodiment described above, an example was shown in which the support portion 302 was connected to the light-transmitting portion 101 of the first embodiment described above. However, the support portion 302 may also be connected to the light-transmitting portion 201 of the second embodiment described above. 【0107】 <4. Fourth Embodiment> In the third embodiment described above, a bandpass filter 300, which has a support portion 302 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 511 on which a sensor chip 111 is mounted, via the support portion 302. In this fourth embodiment, a bandpass filter, which has a support portion extending from a curved light-transmitting portion 101, is mounted on the sensor chip 111. 【0108】 Figure 19 is a cross-sectional view showing an example of the configuration of an imaging device according to the fourth embodiment. 【0109】 In the figure, the imaging device includes a bandpass filter 400 and a sensor chip 111. The bandpass filter 400 includes a support portion 402 instead of the support portion 102 of the first embodiment described above. The other configurations of the bandpass filter 400 in the fourth embodiment are the same as those of the bandpass filter 100 of the first embodiment described above. 【0110】 The bandpass filter 400 is fixed onto the sensor chip 111 via a support portion 402. The support portion 402 can be bonded to the sensor chip 111 via an adhesive layer 106. 【0111】 The support portion 402 supports the bandpass filter 400 on the sensor chip 111 at intervals. In this case, the support portion 402 can be configured such that the sensor area 112 of the sensor chip 111 is covered by the bandpass filter 400. For example, the support portion 402 may be configured by bending in a stepped manner around the light-transmitting portion 101. In this case, the sensor area 112 of the sensor chip 111 can be sealed with the bandpass filter 400, and the sensor area 112 of the sensor chip 111 can be sealed without glass. 【0112】 As described above, in the fourth embodiment, a bandpass filter 400, which has a support portion 402 extending from a curved light-transmitting portion 101, is mounted on the sensor chip 111 via the support portion 402. This eliminates the need for a frame to mount the bandpass filter 400 on the sensor chip 111, and allows the bandpass filter 400 to be spaced apart on the sensor chip 111. Therefore, it is possible to miniaturize the imaging device, facilitate positional accuracy of the curved light-transmitting portion 101, and suppress an increase in the number of parts of the imaging device, thereby reducing costs. 【0113】 In the fourth embodiment described above, an example was shown in which the support portion 402 was connected to the light-transmitting portion 101 of the first embodiment described above. However, the support portion 402 may also be connected to the light-transmitting portion 201 of the second embodiment described above. 【0114】 <5. Fifth Embodiment> In the fourth embodiment described above, a bandpass filter 400, which has a support portion 402 extending from a curved light-transmitting portion 101, is mounted on the sensor chip 111 via the support portion 402. In this fifth embodiment, a bandpass filter, which has a support portion extending from a curved light-transmitting portion 101, is mounted on the sensor chip 111 via the support portion, and a protrusion that can be fitted onto the sensor chip 111 is provided on the support portion. 【0115】 Figure 20 is a cross-sectional view showing an example of the configuration of an imaging device according to the fifth embodiment. 【0116】 In the figure, the imaging device includes a bandpass filter 450 and a sensor chip 411. The bandpass filter 450 includes a support portion 452 instead of the support portion 402 of the fourth embodiment described above. The other configurations of the bandpass filter 450 in the fifth embodiment are the same as those of the bandpass filter 400 in the fifth embodiment described above. 【0117】 Furthermore, the sensor chip 411 has a recess 413 added to the sensor chip 111 of the fourth embodiment described above. The other configurations of the sensor chip 411 of the fifth embodiment are the same as those of the sensor chip 111 of the fourth embodiment described above. 【0118】 The support portion 452 has a protrusion 453 added to the support portion 402 of the fourth embodiment described above. The other configurations of the support portion 452 of the fifth embodiment are the same as those of the support portion 402 of the fourth embodiment described above. 【0119】 The protrusion 453 can be positioned on the lower surface of the support portion 452. The protrusion 453 can be fitted into the recess 413. By fitting the protrusion 453 into the recess 413, the curved light-transmitting portion 101 can be positioned on the sensor area 112 of the sensor chip 411. Here, by fitting the protrusion 453 into the recess 413, the bandpass filter 450 may be fixed on the sensor chip 411. In this case, the support portion 452 does not need to have an alignment mark 105. 【0120】 As described above, in the fifth embodiment, a bandpass filter 450, which has a support portion extending from a curved light-transmitting portion 101, is mounted on the sensor chip 411 via the support portion 452, and a protrusion 453 that can be fitted into the sensor chip 411 is provided on the support portion 452. This eliminates the need for a frame to mount the bandpass filter 450 on the sensor chip 411, while allowing the bandpass filter 450 to be spaced apart on the sensor chip 411. Furthermore, by inserting the protrusion 453 into the recess 413, the positional accuracy of the curved light-transmitting portion 101 can be achieved. Therefore, it is possible to miniaturize the imaging device, simplify the positional accuracy of the curved light-transmitting portion 101, suppress the increase in the number of parts of the imaging device, and reduce costs. 【0121】 In the fifth embodiment described above, an example was shown in which the support portion 452 is connected to the light-transmitting portion 101 of the first embodiment described above. However, the support portion 452 may also be connected to the light-transmitting portion 201 of the second embodiment described above. 【0122】 Furthermore, in the fifth embodiment described above, a protrusion 453 that can be fitted onto the sensor chip 411 is provided on the support portion 452, and a recess 413 into which the protrusion 453 can be fitted is provided on the sensor chip 411. Alternatively, a protrusion that can be fitted onto the support portion 452 may be provided on the sensor chip 411, and a recess into which the protrusion can be fitted may be provided on the support portion 452. 【0123】 <6. Sixth Embodiment> In the fourth embodiment described above, a bandpass filter 400, which has a support portion 402 extending from a curved light-transmitting portion 101, is mounted on the sensor chip 111 via the support portion 402. In this sixth embodiment, the bandpass filter 400, which has a support portion 402 extending from a curved light-transmitting portion 101, is integrated into a CSP together with the sensor chip. 【0124】 Figure 21 is a cross-sectional view showing an example of the configuration of an imaging device according to the sixth embodiment. 【0125】 In the figure, the imaging device comprises a bandpass filter 400, a semiconductor chip P11, and a sensor chip P12. In this case, the sensor chip P12 is stacked on the semiconductor chip P11. Here, the planar sizes of the bandpass filter 400, the semiconductor chip P11, and the sensor chip P12 can be equal to each other. In this case, the horizontal edges of the bandpass filter 400, the semiconductor chip P11, and the sensor chip P12 can be aligned with each other. In this case, each side surface of the bandpass filter 400, the semiconductor chip P11, and the sensor chip P12 may be a dicing surface. This allows the imaging device to be configured as a WLCSP (Wafer Level Chip Size Package) packaged at the wafer level. 【0126】 Sensor elements are formed on the sensor chip P12. The sensor elements may be image sensors such as CCD (Charged Coupled Device) sensors, CMOS (Complementary Metal-Oxide Semiconductor) sensors, or SPAD (Single Photon Avalanche Diode) sensors, or they may be EVS (Event-based Vision Sensor) sensors. The light received by the image sensor may be visible light, near-infrared (NIR), short-wavelength infrared (SWIR), ultraviolet light, or X-rays. 【0127】 In this configuration, the sensor element comprises pixels and pixel transistors arranged in a matrix along the row and column directions. A photodiode can be formed in each pixel. The pixel transistors may include a reset transistor for resetting the pixel, a selection transistor for selecting a pixel, a transfer transistor for transferring charge accumulated in the pixel, and an amplifier transistor that forms a source follower with the pixel. 【0128】 The sensor chip P12 comprises a semiconductor substrate 120 and a wiring layer 121. The wiring layer 121 is stacked on the semiconductor substrate 120. A color filter 114 is formed on the back side of the semiconductor substrate 120 for each pixel. An on-chip lens 115 is formed on the color filter 114 for each pixel. 【0129】 The wiring layer 121 is provided with wiring 122 embedded in the insulating layer and bonding electrodes 124. The wiring layer 121 is also provided with vias 123 used for interlayer connections. The bonding electrodes 124 can be used for direct bonding between the sensor chip P12 and the semiconductor chip P11. 【0130】 A circuit layer is formed on the semiconductor chip P11. Semiconductor elements are formed on the circuit layer. Semiconductor elements may include transistors, resistors, capacitors, etc. A memory may be formed as a semiconductor element, a processor may be formed, a signal processing circuit may be formed, a data processing circuit may be formed, or an interface circuit may be formed. Hardware circuits such as FPGAs (Field-Programmable Gate Arrays) or ASICs (Application Specific Integrated Circuits) may be formed as semiconductor elements. 【0131】 The semiconductor chip P11 comprises a semiconductor substrate 141 and a wiring layer 131. The wiring layer 131 is stacked on the semiconductor substrate 141. A gate electrode embedded in an insulating layer is also formed on the semiconductor substrate 141. At this time, an active region isolated by STI (Shallow trench isolation) can be formed on the semiconductor substrate 141. In the active region, a channel region located below the gate electrode and impurity diffusion layers located on both sides of the channel region can be formed. 【0132】 The wiring layer 131 is provided with wiring 132 embedded in the insulating layer and bonding electrodes 134. The wiring layer 131 is also provided with vias 133 used for interlayer connections. The bonding electrodes 134 can be used for direct bonding of the sensor chip P12 and the semiconductor chip P11. Hybrid bonding can be used for direct bonding of the sensor chip P12 and the semiconductor chip P11. In this case, the bonding electrodes 124 and 134 are positioned opposite each other. The bonding electrodes 124 and 134 can then be joined to each other based on a metal bond such as a Cu-Cu bond. 【0133】 A redistribution layer HR is provided on the back surface of the semiconductor substrate 141. Through electrodes 143 and redistributions 144 are provided in the redistribution layer HR. The through electrodes 143 are embedded in the semiconductor substrate 141. The through electrodes 143 penetrate from the back surface of the semiconductor substrate 141 to the position of the wiring layer 131 and are connected to the wiring layer 131. The redistributions 144 are connected to the through electrodes 143. The through electrodes 143 and redistributions 144 are insulated from the semiconductor substrate 141 via an insulating layer 142. The inner surface of the through electrodes 143 and the redistributions 144 are covered with a protective film 145. The redistributions 144 are connected to a protruding electrode 146 through the protective film 145. The through electrodes 143 and redistributions 144 may be made of the same thin film or may be formed integrally. The protruding electrode 146 may be a ball electrode such as a solder ball, or a pillar electrode made of a conductor. 【0134】 The materials of each semiconductor substrate 120 and 141 may be Si, GaAs, SiC, GaN, InGaAs, or InP, etc. The materials of each semiconductor substrate 120 and 141 may be the same or different. 【0135】 The insulating layer material used for each wiring layer 121, 131 can be, for example, SiO2, SiN, or SiCN. The protective film material 145, 153 may be a resin such as solder resist, or an inorganic material such as SiO2, SiN, or SiCN. The materials for the wiring 122, 132, rewiring 144, vias 123, 133, and junction electrodes 124, 134 can be, for example, metals such as Al, Cu, AlCu, AlSiCu, or Co. The material for the through electrode 143 can be, for example, metals such as Cu, Ti, Ta, Al, W, Ni, Ru, or Co, and a laminated structure of multiple materials may be used. 【0136】 The bandpass filter 400 is fixed onto the sensor chip P12 via a support portion 402. The support portion 402 supports the bandpass filter 400 on the sensor chip P12 at spaced intervals. In this case, the support portion 402 can be configured such that the sensor area of ​​the sensor chip P12 is covered by the bandpass filter 400. For example, the support portion 402 may be configured by bending in a stepped manner around the light-transmitting portion 101. Here, the sensor area of ​​the sensor chip P12 can be sealed with the bandpass filter 400, and the sensor area of ​​the sensor chip P12 can be sealed without glass. 【0137】 Figures 22 to 24 are cross-sectional views showing an example of a method for manufacturing an imaging device according to the sixth embodiment. 【0138】 In Figure 22a, the stacked wafer W10 has a sensor wafer W12 stacked on top of a semiconductor wafer W11. The stacked wafer W10 is divided into partitioned regions RK. From each partitioned region RK, the stacked structure of the semiconductor chip P11 and the sensor chip P12 can be cut out. 【0139】 Next, as shown in Figure 22b, apertures KA are formed in each partitioned region RK on the semiconductor substrate 141 of the semiconductor wafer W11 based on lithography and dry etching techniques. The apertures KA can be formed at the location of the through-electrode 143. Dry etching may be, for example, RIE (Reactive Ion Etching). 【0140】 Next, an insulating layer 142 is formed on the back side of the semiconductor substrate 141 of the semiconductor wafer W11 by a method such as sputtering. At this time, the insulating layer 142 can be formed on the back surface of the semiconductor substrate 141 and on the inner surface of the aperture KA. Then, the insulating layer 142 on the bottom surface of the aperture KA is removed based on lithography and dry etching techniques. 【0141】 Next, rewiring material is deposited in each partitioned region RK, both inside the opening KA and on the insulating layer 142, using methods such as sputtering or vapor deposition. Then, the rewiring material is patterned in each partitioned region RK based on lithography and dry etching techniques to form through electrodes 143 and rewiring 144. At this time, the through electrodes 143 can be connected to the wiring layer 131 in each partitioned region RK. 【0142】 Next, as shown in Figure 23a, a protective film 145 is formed on the back side of the semiconductor wafer W11. At this time, the inner surface of the through-electrode 143 and the redistribution 144 can be covered with the protective film 145. Then, openings KA2 are formed in the protective film 145 based on lithography and dry etching techniques. The openings KA2 can be formed at the positions where the protruding electrode 146 is positioned. 【0143】 Next, as shown in Figure 23b, a protruding electrode 146 is formed on the back side of the semiconductor wafer W11 through an opening KA2. At this time, the protruding electrode 146 can be connected to the rewiring 144. 【0144】 Next, as shown in Figure 24a, a filter array W400, in which multiple bandpass filters 400 are arranged, is mounted on the sensor chip P12. In this case, the filter array W400 can cover the sensor area of ​​the sensor chip P12 in sections RK. 【0145】 Next, as shown in Figure 24b, the stacked wafer W10 with the filter array W400 attached is fragmented into partitioned regions RK, and the imaging device shown in Figure 21 is cut out. Dicing or laser cutting may be used to cut out the imaging device. 【0146】 As described above, in the sixth embodiment, the bandpass filter 400, which has a support portion 402 extending from the curved light-transmitting portion 101, is integrated into a single CSP (Cyclone Surface Package) with the semiconductor chip P11 and the sensor chip P12. This eliminates the need for a frame to mount the bandpass filter 400 on the sensor chip P12, and allows the bandpass filter 400 to be spaced apart on the sensor chip P12. Therefore, it is possible to miniaturize the imaging device, facilitate the positional accuracy of the curved light-transmitting portion 101, and suppress the increase in the number of parts of the imaging device, thereby reducing costs. 【0147】 <7. Seventh Embodiment> In the first embodiment described above, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. In this seventh embodiment, a support portion extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter, and a groove is formed in the support portion. 【0148】 Figure 25 shows an example configuration of a bandpass filter according to the seventh embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 700, and b is a plan view showing an example configuration of the bandpass filter 700. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0149】 In the figure, the bandpass filter 700 includes a support portion 702 instead of the support portion 102 of the first embodiment described above. The other configurations of the bandpass filter 700 of the seventh embodiment are the same as those of the bandpass filter 100 of the first embodiment described above. 【0150】 The support portion 702 has a groove 701 added to the support portion 102 of the first embodiment described above. The other configurations of the support portion 702 of the seventh embodiment are the same as those of the support portion 102 of the first embodiment described above. 【0151】 The grooves 701 are formed in the support portion 702 so as to circle around the light-transmitting portion 101. The grooves 701 can be positioned on the lower or inner surface of the support portion 702. The width, depth, and number of grooves 701 can be set to reduce flare on the spectral transmittance control layer 103 side. For example, when forming the grooves 701, a pattern corresponding to the grooves 701 may be provided on the mold KN1 in Figure 8, or on the mold KN3 in Figure 12. 【0152】 As described above, in the seventh embodiment, a support portion 702 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 700, and a groove 701 is formed in the support portion 702. This makes it possible to position the curved light-transmitting portion 101 based on the positioning of the support portion 702, making it possible to easily achieve positional accuracy of the curved light-transmitting portion 101, and to reduce flare on the sensor surface while suppressing an increase in the number of processes. 【0153】 In the seventh embodiment described above, an example was shown in which the support portion 702 is connected to the light-transmitting portion 101 of the first embodiment described above. However, the support portion 702 may also be connected to the light-transmitting portion 201 of the second embodiment described above. In addition to the groove 701, a textured surface may be formed on the lower surface or inner surface of the support portion 702 to cause diffuse reflection and scattering of reflected light, thereby suppressing flare. 【0154】 <8. Eighth Embodiment> In the seventh embodiment described above, a support portion 702 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 700, and a groove 701 is formed on the support portion 702. In this eighth embodiment, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter, and a light-shielding film is formed on the support portion 102. 【0155】 Figure 26 shows an example configuration of a bandpass filter according to the eighth embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 800, and b is a plan view showing an example configuration of the bandpass filter 800. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0156】 In the figure, this bandpass filter 800 has a light-shielding film 801 added to the bandpass filter 800 of the first embodiment described above. The other configurations of the bandpass filter 800 of the eighth embodiment are the same as those of the bandpass filter 100 of the first embodiment described above. 【0157】 The light-shielding film 801 can be formed on the lower or inner surface of the support portion 102. The position and thickness of the light-shielding film 801 can be set to reduce flare on the spectral transmittance control layer 103 side. The light-shielding film 801 may be made of a metal such as Cr, or it may be made of a black resin. 【0158】 As described above, in the eighth embodiment, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 800, and a light-shielding film 801 is formed on the support portion 102. This makes it possible to position the curved light-transmitting portion 101 based on the positioning of the support portion 102, making it possible to improve the positional accuracy of the curved light-transmitting portion 101, and to reduce flare on the sensor surface while suppressing an increase in the number of parts. 【0159】 In the eighth embodiment described above, an example was shown in which the light-shielding film 801 was formed on the support portion 102 of the first embodiment described above. However, the light-shielding film 801 may also be formed on the support portion 202 of the second embodiment described above. Furthermore, in the eighth embodiment described above, an example was shown in which the light-shielding film 801 was formed on the support portion 102 on the spectral transmittance control layer 103 side. However, the light-shielding film may also be formed on the support portion 102 on the anti-reflective layer 104 side. 【0160】 <9. The ninth embodiment> In the third embodiment described above, a bandpass filter 300, which has a support portion 302 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 511 on which a sensor chip 111 is mounted, via the support portion 302. In this ninth embodiment, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate to which a sensor chip is wire-connected, via the support portion 102, and a lens driven by an actuator is provided on the bandpass filter 100. 【0161】 Figure 27 is a cross-sectional view showing an example configuration of a bandpass filter according to the ninth embodiment, and Figure 28 is a plan view showing an example configuration of a bandpass filter according to the ninth embodiment. 【0162】 In Figures 27 and 28, the imaging device comprises a bandpass filter 100, a sensor chip 901, a mounting substrate 911, a frame 921, a lens 931, and an actuator 934. 【0163】 The bandpass filter 100 is fixed to the frame 921 via a support portion 102. The frame 921 is placed on the mounting substrate 911. 【0164】 Wirings 912 and land electrodes 914 are formed on the mounting substrate 911. The wirings 912 are connected to the land electrodes 914. Vias connecting the wirings 912 between layers may be formed on the mounting substrate 911. A cavity 913 capable of housing a sensor chip 901 is also formed on the mounting substrate 911. The land electrodes 914 can be arranged around the cavity 913. Electronic components 915 may be mounted on the mounting substrate 911. 【0165】 The sensor chip 901 is die-bonded into the cavity 913 via die-bonding material 904. Pad electrodes 902 are formed on the sensor chip 901. The sensor chip 901 is mounted on the mounting substrate 911 via bonding wires 903. At this time, the pad electrodes 902 are connected to land electrodes 914 on the mounting substrate 911. 【0166】 A projection 922 is provided on the frame 921. The projection 922 protrudes inward from the frame 921. The support portion 102 can be mounted on the projection 922. In this case, the tip of the projection 922 can be located outside the sensor area 112. Here, as shown in Figure 28, a gap 923 can be provided between the projections 922 to prevent the bonding wire 903 from interfering with the projection 922. 【0167】 The support portion 102 supports the bandpass filter 100 on the sensor chip 901 at a distance from each other. At this time, it is desirable that the CRA to the spectral transmittance control layer 103 be 20° or less. This makes it possible to reduce the angle of incidence of light to the spectral transmittance control layer 103, thereby suppressing a decrease in spectral characteristics. As a result, color unevenness in the image captured by the sensor chip 901 can be suppressed, and image quality can be improved. Here, by mounting the support portion 102 on the protrusion portion 922, the distance between the bandpass filter 100 and the sensor chip 901 can be secured. At this time, the bandpass filter 100 can cover the cavity 913 in which the sensor chip 901 is housed. Here, the cavity 913 in which the sensor chip 901 is housed can be sealed with the bandpass filter 100, and the sensor chip 901 can be sealed without glass. 【0168】 A lens 931 is positioned on the bandpass filter 100. The lens 931 can be used as an optical system to form an optical image on the sensor area 112. The lens 931 is supported on the bandpass filter 100 via a holder 932. The holder 932 may be a lens barrel. An actuator 934 is positioned around the holder 932. The actuator 934 can drive the lens 931 in the horizontal direction. The actuator 934 is housed in a housing 933. Below the housing 933 is a solenoid 935 that drives the actuator 934. The solenoid 935 is supported on a support plate 936. 【0169】 As described above, in the ninth embodiment, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 911 to which a sensor chip 901 is wire-connected, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. This makes it possible to reduce the height of the imaging device while facilitating the positional accuracy of the curved light-transmitting portion 101, and to form a sharp optical image on the sensor surface while incorporating an image stabilization function into the imaging device. 【0170】 In the ninth embodiment described above, an example was shown in which the bandpass filter 100 of the first embodiment described above is installed in the imaging device. However, the bandpass filter 200 of the second embodiment described above may also be installed in the imaging device. 【0171】 <10. Tenth Embodiment> In the ninth embodiment described above, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 911 to which a sensor chip 901 is wire-connected, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. In this tenth embodiment, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate to which a sensor chip 901 is bump-connected, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. 【0172】 Figure 29 is a cross-sectional view showing an example of the configuration of a bandpass filter according to the tenth embodiment. 【0173】 In the figure, this imaging device includes a mounting substrate 1011 and solder balls 1016 in place of the mounting substrate 911 and bonding wires 903 of the ninth embodiment described above. Furthermore, the frame 921 and die bond material 904 are removed from this imaging device compared to the imaging device of the ninth embodiment described above. The other configurations of the imaging device of the tenth embodiment are the same as those of the imaging device of the ninth embodiment described above. 【0174】 The bandpass filter 100 is placed on the mounting substrate 1011 via a support portion 102. In this case, the support portion 102 may be fixed to the mounting substrate 1011 via an adhesive layer. 【0175】 Wirings 1012 and land electrodes 1014 are formed on the mounting substrate 1011. The wirings 1012 are connected to the land electrodes 1014. Vias connecting the wirings 1012 between layers may be formed on the mounting substrate 1011. An opening 1013 corresponding to the sensor area 112 is also formed on the mounting substrate 1011. The land electrodes 1014 can be placed on the lower surface of the mounting substrate 1011 around the opening 1013. Solder balls 1016 are bonded onto the land electrodes 1014. Electronic components 1015 may be flip-chip mounted on the mounting substrate 1011. 【0176】 The sensor chip 901 is mounted on the underside of the mounting substrate 1011 via solder balls 1016. At this time, the solder balls 1016 are connected to the pad electrodes 902 on the sensor chip 901. Here, the light LI that has passed through the bandpass filter 100 can be incident on the sensor area 112 through the aperture 1013. 【0177】 The support portion 102 supports the bandpass filter 100 on the sensor chip 901 at a distance from each other. At this time, the bandpass filter 100 can cover the opening 1013 provided in the mounting substrate 1011. As a result, the sensor chip 901 mounted on the lower surface of the mounting substrate 1011 can be sealed with the bandpass filter 100, and the sensor chip 901 can be sealed without glass. 【0178】 As described above, in the tenth embodiment, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 1011 to which a sensor chip 901 is bump-connected, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. This makes it possible to reduce the height of the imaging device while facilitating the positional accuracy of the curved light-transmitting portion 101, and to form a sharp optical image on the sensor surface while incorporating an image stabilization function into the imaging device. 【0179】 In the tenth embodiment described above, an example was shown in which the bandpass filter 100 of the first embodiment described above is installed in the imaging device. However, the bandpass filter 200 of the second embodiment described above may also be installed in the imaging device. 【0180】 <11. Eleventh Embodiment> In the first embodiment described above, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. In this eleventh embodiment, a support portion extending horizontally from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter. 【0181】 Figure 30 shows an example configuration of a bandpass filter according to the 11th embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 1100, and b is a plan view showing an example configuration of the bandpass filter 1100. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0182】 In the figure, the bandpass filter 1100 includes a support portion 1102 instead of the support portion 102 of the first embodiment described above. The other configurations of the bandpass filter 1100 of the eleventh embodiment are the same as those of the bandpass filter 100 of the first embodiment described above. 【0183】 The support portion 1102 supports the light-transmitting portion 101. The support portion 1102 extends horizontally from the end of the light-transmitting portion 101. In this case, the support portion 1102 can have a shape suitable for achieving precise positioning of the light-transmitting portion 101. Here, the light-transmitting portion 101 and the support portion 1102 can be integrally molded. This makes it possible to accurately position the light-transmitting portion 101 relative to the support portion 1102, and to position the light-transmitting portion 101 with high precision based on the positioning of the support portion 1102. Here, the end of the support portion 1102 may be used as a reference point for positioning the light-transmitting portion 101. In this case, the distance from the light-transmitting portion 101 to the end of the support portion 1102 can be set to a predetermined value. The lower surface MK of the support portion 1102 can be a flat surface. In this case, the flat surface of the lower surface MK of the support portion 1102 may be used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion 101. 【0184】 The sag amount Z of the light-transmitting portion 101 can be made greater than the thickness DH of the support portion 1102. This makes it possible to reduce the height of the support portion 1102 while making the light-transmitting portion 101 curved. 【0185】 As described above, in the 11th embodiment, a support portion 1102 is provided on the bandpass filter 1100, which extends horizontally from the curved light-transmitting portion 101 and supports the light-transmitting portion 101. This makes it possible to reduce the height of the support portion 1102, and to position the curved light-transmitting portion 101 based on the positioning of the support portion 1102, thereby making it possible to improve the positional accuracy of the curved light-transmitting portion 101. 【0186】 In the 11th embodiment described above, an example was shown in which a support portion 1102 was provided instead of the support portion 102 of the bandpass filter 100 in the first embodiment described above. However, the groove 701 of the seventh embodiment described above may be formed on the support portion 1102, or the light-shielding film 801 of the eighth embodiment described above may be formed on the support portion 1102. 【0187】 <12. Twelfth Embodiment> In the second embodiment described above, a support portion 202 extending from the lens-shaped light-transmitting portion 201 and supporting the light-transmitting portion 201 is provided on the bandpass filter 200. In this twelfth embodiment, a support portion extending horizontally from the lens-shaped light-transmitting portion 201 and supporting the light-transmitting portion 201 is provided on the bandpass filter. 【0188】 Figure 31 shows an example configuration of a bandpass filter according to the twelfth embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 1200, and b is a plan view showing an example configuration of the bandpass filter 1200. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0189】 In the figure, the bandpass filter 1200 includes a support portion 1202 instead of the support portion 202 of the second embodiment described above. The other configurations of the bandpass filter 1200 of the twelfth embodiment are the same as those of the bandpass filter 200 of the second embodiment described above. 【0190】 The support portion 1202 supports the light-transmitting portion 201. The support portion 1202 extends horizontally from the end of the light-transmitting portion 201. In this case, the support portion 1202 can have a shape suitable for achieving precise positioning of the light-transmitting portion 201. Here, the light-transmitting portion 201 and the support portion 1202 can be integrally molded. This makes it possible to accurately position the light-transmitting portion 201 relative to the support portion 1202, and to position the light-transmitting portion 201 with high precision based on the positioning of the support portion 1202. Here, the end of the support portion 1202 may be used as a reference point for positioning the light-transmitting portion 201. In this case, the distance from the light-transmitting portion 201 to the end of the support portion 1202 can be set to a predetermined value. The lower surface MK of the support portion 1202 can be a flat surface. In this case, the flat surface of the lower surface MK of the support portion 1202 may be used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion 201. 【0191】 The sag amount Z of the light-transmitting portion 201 can be made greater than the thickness DH of the support portion 1202. This allows for a lower profile support portion 1202 while enabling the light-transmitting portion 201 to be curved. 【0192】 Alignment marks 205 are provided on the support portion 1202. The alignment marks 205 can be used to align the light-transmitting portion 201. The alignment marks 205 may be placed at the four corners of the bandpass filter 1200. The reflectance of the alignment marks 205 may be different from that of the support portion 1202. Alternatively, a step may be formed on the support portion 1202 along the contour of the alignment marks 205. 【0193】 Thus, in the twelfth embodiment described above, a support portion 1202 is provided on the bandpass filter 1200, extending horizontally from the lens-shaped light-transmitting portion 201 and supporting the light-transmitting portion 201. This makes it possible to reduce the height of the support portion 1202, and to position the curved light-transmitting portion 201 based on the positioning of the support portion 1202, thereby facilitating the precise positioning of the curved light-transmitting portion 201. 【0194】 In the twelfth embodiment described above, an example was shown in which a support portion 1202 was provided instead of the support portion 202 of the bandpass filter 200 in the second embodiment described above. However, the groove 701 of the seventh embodiment described above may be formed on the support portion 1202, or the light-shielding film 801 of the eighth embodiment described above may be formed on the support portion 1202. 【0195】 <13. The 13th Embodiment> In the first embodiment described above, a support portion 102 extending from the curved light-transmitting portion 101 and supporting the light-transmitting portion 101 is provided on the bandpass filter 100. In this thirteenth embodiment, a support portion extending from the curved light-transmitting portion 101 in the direction of light incidence and supporting the light-transmitting portion 101 is provided on the bandpass filter. 【0196】 Figure 32 shows an example configuration of a bandpass filter according to the 13th embodiment. In the figure, a is a cross-sectional view showing an example configuration of the bandpass filter 1300, and b is a plan view showing an example configuration of the bandpass filter 1300. Figure a shows an example configuration cut along the line A1-A2 in figure b. 【0197】 In the figure, the bandpass filter 1300 includes a support portion 1302 instead of the support portion 102 of the first embodiment described above. The other configurations of the bandpass filter 1300 of the thirteenth embodiment are the same as those of the bandpass filter 100 of the first embodiment described above. 【0198】 The support portion 1302 supports the light-transmitting portion 101. The support portion 1302 extends from the end of the light-transmitting portion 101 in the direction of light incidence and is bent horizontally. In this case, the support portion 1302 can have a shape suitable for achieving precise positional accuracy of the light-transmitting portion 101. 【0199】 The support portion 1302 may include a vertical portion 1302A and a horizontal portion 1302B. The vertical portion 1302A supports the light-transmitting portion 101 in the vertical direction. In this case, the vertical portion 1302A extends upward from the end of the light-transmitting portion 101. The horizontal portion 1302B extends horizontally from the upper end of the vertical portion 1302A. The lower surface MK of the horizontal portion 1302B can be a flat surface. In this case, the flat surface of the lower surface MK of the horizontal portion 1302B may be used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion 101. 【0200】 Thus, in the 13th embodiment described above, a support portion 1302 is provided on the bandpass filter 1300 that extends from the curved light-transmitting portion 101 in the direction of light incidence and supports the light-transmitting portion 101. This makes it possible to position the curved light-transmitting portion 101 based on the positioning of the support portion 1302, thereby facilitating the achievement of positional accuracy for the curved light-transmitting portion 101. 【0201】 In the 13th embodiment described above, an example was shown in which a support portion 1302 was provided instead of the support portion 102 of the bandpass filter 100 in the first embodiment described above. However, the groove 701 of the seventh embodiment described above may be formed on the support portion 1302, or the light-shielding film 801 of the eighth embodiment described above may be formed on the support portion 1302. 【0202】 <14. The 14th Embodiment> In the ninth embodiment described above, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 911 to which a sensor chip 901 is wired, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. In this fourteenth embodiment, a bandpass filter 1100, which has a support portion 1102 extending horizontally from a curved light-transmitting portion 101, is mounted on a mounting substrate 911 to which a sensor chip 901 is wired, via the support portion 1102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 1100. 【0203】 Figure 33 is a cross-sectional view showing an example of the configuration of an imaging device according to the 14th embodiment. 【0204】 In the figure, this imaging device is equipped with a bandpass filter 1100 instead of the bandpass filter 100 of the ninth embodiment described above. The other configurations of the imaging device of the fourteenth embodiment are the same as those of the imaging device of the ninth embodiment described above. 【0205】 The bandpass filter 1100 is fixed to the frame 921 via a support portion 1102. The frame 921 is placed on the mounting substrate 911. 【0206】 The support portion 1102 supports the bandpass filter 1100 on the sensor chip 901 with a gap between them. At this time, it is desirable that the CRA to the spectral transmittance control layer 103 be 20° or less. By mounting the support portion 1102 on the protrusion portion 922, it is possible to reduce the height of the bandpass filter 1100 while ensuring the distance between the bandpass filter 1100 and the sensor chip 901. At this time, the bandpass filter 1100 can cover the cavity 913 in which the sensor chip 901 is housed. Here, the cavity 913 in which the sensor chip 901 is housed can be sealed with the bandpass filter 1100, and the sensor chip 901 can be sealed without glass. 【0207】 As described above, in the 14th embodiment, a bandpass filter 1100, which has a support portion 1102 extending horizontally from a curved light-transmitting portion 101, is mounted on a mounting substrate 911 to which a sensor chip 901 is wire-connected, via the support portion 1102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 1100. This makes it possible to reduce the height of the imaging device while facilitating the positional accuracy of the curved light-transmitting portion 101, and to form a sharp optical image on the sensor surface while incorporating an image stabilization function into the imaging device. 【0208】 In the 14th embodiment described above, an example was shown in which the bandpass filter 1100 of the 11th embodiment described above is provided in the imaging device, but the bandpass filter 1200 of the 12th embodiment described above may also be provided in the imaging device. 【0209】 <15. The 15th Embodiment> In the tenth embodiment described above, a bandpass filter 100, which has a support portion 102 extending from a curved light-transmitting portion 101, is mounted on a mounting substrate 1011 to which a sensor chip 901 is bump-connected, via the support portion 102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 100. In this fifteenth embodiment, a bandpass filter 1100, which has a support portion 1102 extending horizontally from a curved light-transmitting portion 101, is mounted on a mounting substrate 1011 to which a sensor chip 901 is bump-connected, via the support portion 1102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 1100. 【0210】 Figure 34 is a cross-sectional view showing an example of the configuration of an imaging device according to the 15th embodiment. 【0211】 In the figure, this imaging device is equipped with a bandpass filter 1100 instead of the bandpass filter 100 of the tenth embodiment described above. The other configurations of the imaging device of the fifteenth embodiment are the same as those of the imaging device of the tenth embodiment described above. 【0212】 The bandpass filter 1100 is placed on the mounting substrate 1011 via a support portion 1102. In this case, the support portion 1102 may be fixed to the mounting substrate 1011 via an adhesive layer. 【0213】 The support portion 1102 supports the bandpass filter 1100 on the sensor chip 901 at a distance from each other. In this configuration, the bandpass filter 1100 can cover the opening 1013 provided in the mounting substrate 1011. This allows for a lower profile bandpass filter 1100 while simultaneously sealing the sensor chip 901 mounted on the lower surface of the mounting substrate 1011 with the bandpass filter 1100, thus enabling glassless sealing of the sensor chip 901. 【0214】 As described above, in the 15th embodiment, a bandpass filter 1100, which has a support portion 1102 extending horizontally from a curved light-transmitting portion 101, is mounted on a mounting substrate 1011 to which a sensor chip 901 is bump-connected, via the support portion 1102, and a lens 931 driven by an actuator 934 is provided on the bandpass filter 1100. This makes it possible to reduce the height of the imaging device while facilitating the positional accuracy of the curved light-transmitting portion 101, and to form a sharp optical image on the sensor surface while incorporating an image stabilization function into the imaging device. 【0215】 In the 15th embodiment described above, an example was shown in which the bandpass filter 1100 of the 11th embodiment described above is provided in the imaging device. However, the bandpass filter 1200 of the 12th embodiment described above may also be provided in the imaging device. 【0216】 <16. Examples of applications to mobile devices> The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein may be implemented as a device mounted on any type of mobile vehicle, such as an automobile, electric vehicle, hybrid electric vehicle, motorcycle, bicycle, personal mobility device, airplane, drone, ship, or robot. 【0217】 Figure 35 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied. 【0218】 The vehicle control system 12000 comprises multiple electronic control units connected via a communication network 12001. In the example shown in Figure 35, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053. 【0219】 The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle. 【0220】 The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc. 【0221】 The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing. 【0222】 The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light. 【0223】 The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041. 【0224】 The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking system based on information from inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning. 【0225】 Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040. 【0226】 Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams. 【0227】 The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 35, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display. 【0228】 Figure 36 shows an example of the installation position of the imaging unit 12031. 【0229】 In Figure 36, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105. 【0230】 The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes. 【0231】 Figure 36 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained. 【0232】 At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection. 【0233】 For example, the microcomputer 12051, based on distance information obtained from imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to vehicle 12100). In particular, it can extract the nearest object on the vehicle 12100's path that is traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed. 【0234】 For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, heavy vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010. 【0235】 At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position. 【0236】 The above describes an example of a vehicle control system to which the technology described herein can be applied. The technology described herein can be applied to the imaging unit 12031 of the configuration described above. Specifically, for example, each of the bandpass filters 100 to 400, 450, 700, and 800 of the above embodiment can be applied to the imaging unit 12031. By applying the technology described herein to the vehicle control system 12000, it is possible to improve image quality while simplifying the assembly of the imaging unit 12031. 【0237】 The embodiments described above are merely examples for realizing the present technology, and there is a corresponding relationship between the matters in the embodiments and the inventive features in the claims. Similarly, there is a corresponding relationship between the inventive features in the claims and the matters in the embodiments of the present technology bearing the same name. However, the present technology is not limited to the embodiments and can be realized by making various modifications to the embodiments without departing from the gist of the technology. Furthermore, the effects described herein are merely examples and are not limiting, and other effects may also exist. 【0238】 Furthermore, this technology can also be configured as follows. (1) A curved light-transmitting portion with uniform thickness, A spectral transmittance control layer provided on the light-transmitting portion, A support portion extending from the light-transmitting portion and supporting the light-transmitting portion A bandpass filter equipped with the following features. (2) The light-transmitting portion is set to a curvature corresponding to the CRA (Chief Ray Angle) of the sensor surface into which the light transmitted through the light-transmitting portion is incident. The bandpass filter described in (1) above. (3) The support portion is A vertical portion that supports the light-transmitting portion in the vertical direction, A horizontal portion extending horizontally from the lower end of the vertical portion and The bandpass filter according to (1) or (2) above, comprising the above. (4) The light-transmitting portion and the support portion have a seamless structure. A bandpass filter as described in any of (1) to (3) above. (5) The light-transmitting portion and the support portion are integrally molded. A bandpass filter as described in any of (1) to (4) above. (6) The material of the light-transmitting part and the material of the support part are the same. A bandpass filter as described in any of (1) to (5) above. (7) The material of the light-transmitting part and the material of the support part are transparent resin. A bandpass filter as described in any of (1) to (6) above. (8) The light-transmitting portion contains a dye or pigment that absorbs light in a specific wavelength band. A bandpass filter as described in any of (1) to (7) above. (9) The support portion is a flat surface located around the light-transmitting portion. A bandpass filter according to any one of (1) to (8) above, comprising: (10) The flat surface located around the light-transmitting portion is used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion. The bandpass filter described in (9) above. (11) Alignment marks located on the support portion A bandpass filter according to any one of (1) to (10) above, comprising the above. (12) The support portion suspends and supports the light-transmitting portion. A bandpass filter as described in any of (1) to (11) above. (13) The thickness of the light-transmitting portion is 0.5 mm or less. A bandpass filter as described in any of (1) to (12) above. (14) The maximum inclination angle of the curved surface of the light-transmitting portion is 45° or less. A bandpass filter as described in any of (1) to (13) above. (15) The spectral transmittance control layer is a dielectric multilayer film. The band-pass filter according to any one of (1) to (14) above. (16) The support portion extends horizontally from an end portion of the light transmission portion. The band-pass filter according to any one of (1), (2) and (4) to (15) above. (17) The amount of sag of the light transmission portion is larger than the thickness of the support portion. The band-pass filter according to any one of (1), (2) and (4) to (16) above. (18) A pixel array portion in which pixels are arranged in a matrix in the row direction and the column direction, An optical system that forms an optical image on the pixel array portion, And a band-pass filter provided between the pixel array portion and the optical system, The band-pass filter is A curved light transmission portion having a uniform thickness, A spectral transmittance control layer provided on the light transmission portion, A support portion that extends from the light transmission portion and supports the light transmission portion An imaging device comprising. (19) The incident angle of the principal ray to the spectral transmittance control layer is 20° or less. The imaging device according to (18) above. (20) Comprising a sensor chip on which the pixel array portion is formed, The band-pass filter is supported on the sensor chip via the support portion. The imaging device according to (18) or (19) above. (21) The band-pass filter constitutes a CSP (Chip Size Package) together with the sensor chip. The imaging device according to (20) above. 【Explanation of Reference Numerals】 【0239】 100 Band-pass filter 101 Light transmission portion 102 Support portion 103 Spectral transmittance control layer 104 Anti-reflection layer 105 Alignment Marks

Claims

[Claim 1] A curved light-transmitting section with uniform thickness, A spectral transmittance control layer provided on the light-transmitting portion, A support portion extending from the light-transmitting portion and supporting the light-transmitting portion A bandpass filter equipped with the following features. [Claim 2] The light-transmitting portion is set to a curvature corresponding to the CRA (Chief Ray Angle) of the sensor surface into which the light transmitted through the light-transmitting portion is incident. The bandpass filter according to claim 1. [Claim 3] The aforementioned support portion is A vertical portion that supports the light-transmitting portion in the vertical direction, A horizontal portion extending horizontally from the lower end of the vertical portion and The bandpass filter according to claim 1, comprising: [Claim 4] The aforementioned light-transmitting portion and the TH support portion have a seamless structure. The bandpass filter according to claim 1. [Claim 5] The light-transmitting portion and the support portion are integrally molded. The bandpass filter according to claim 1. [Claim 6] The material of the light-transmitting portion and the material of the support portion are the same. The bandpass filter according to claim 1. [Claim 7] The material of the light-transmitting part and the material of the support part are transparent resins. The bandpass filter according to claim 1. [Claim 8] The light-transmitting portion contains a dye or pigment that absorbs light in a specific wavelength range. The bandpass filter according to claim 1. [Claim 9] The support portion is a flat surface located around the light-transmitting portion. The bandpass filter according to claim 1, comprising: [Claim 10] The flat surface located around the light-transmitting portion is used as a reference surface that defines the orientation of the curved surface of the light-transmitting portion. The bandpass filter according to claim 9. [Claim 11] Alignment mark located on the support portion The bandpass filter according to claim 1, comprising: [Claim 12] The support portion suspends and supports the light-transmitting portion. The bandpass filter according to claim 1. [Claim 13] The thickness of the light-transmitting portion is 0.5 mm or less. The bandpass filter according to claim 1. [Claim 14] The maximum inclination angle of the curved surface of the light-transmitting portion is 45° or less. The bandpass filter according to claim 1. [Claim 15] The spectral transmittance control layer is a dielectric multilayer film. The bandpass filter according to claim 1. [Claim 16] The support portion extends horizontally from the end of the light-transmitting portion. The bandpass filter according to claim 1. [Claim 17] The amount of sag in the light-transmitting portion is greater than the thickness of the support portion. The bandpass filter according to claim 1. [Claim 18] A pixel array section in which pixels are arranged in a matrix in the row direction and column direction, An optical system for forming an optical image on the aforementioned pixel array, The system comprises a bandpass filter provided between the pixel array and the optical system, The aforementioned bandpass filter is A curved light-transmitting section with uniform thickness, A spectral transmittance control layer provided on the light-transmitting portion, A support portion extending from the light-transmitting portion and supporting the light-transmitting portion An imaging device equipped with the following features. [Claim 19] The angle of incidence of the principal ray to the spectral transmittance control layer is 20° or less. The imaging apparatus according to claim 18. [Claim 20] The sensor chip comprises the aforementioned pixel array section, The bandpass filter is supported on the sensor chip via the support portion. The imaging apparatus according to claim 18. [Claim 21] The bandpass filter, together with the sensor chip, constitutes a CSP (Chip Size Package). The imaging apparatus according to claim 20.

Images