Semiconductor light-emitting device

Abstract

To provide a highly reliable semiconductor light-emitting device by suppressing the degradation of phosphors. [Solution] The device comprises a lead frame including a first electrode body having an element mounting surface and a second electrode body disposed separately from the first electrode body; a semiconductor light-emitting element disposed on the element mounting surface of the first electrode body; a frame formed across the surfaces of the first electrode body and the second electrode body and forming recesses together with the surface of the element mounting surface and the second electrode body; and a phosphor portion made of a first resin material containing a first phosphor that fills the recesses and covers the semiconductor light-emitting element, and is excited by light emitted from the semiconductor light-emitting element to emit fluorescence, wherein the first phosphor is a KSF phosphor and the first resin material is a phenyl-based silicone resin.

Description

【Technical Field】 【0001】 The present invention relates to a semiconductor light-emitting device including a semiconductor light-emitting element. 【Background Art】 【0002】 A semiconductor light-emitting device using a lead frame is disclosed. For example, Patent Document 1 discloses a semiconductor light-emitting device having a lead frame, a semiconductor light-emitting element provided on the lead frame, and a sealing material made of a medium resin that covers the semiconductor light-emitting element on the lead frame and contains a phosphor. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent No. 5766976 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 In the semiconductor light-emitting device disclosed in Patent Document 1, for example, consider the case where a KSF phosphor is used as the phosphor. The KSF phosphor has a property of hydrolyzing when it comes into contact with moisture. Therefore, for example, when moisture that has entered the sealing material during the use of the semiconductor light-emitting device reaches the KSF phosphor, the chromaticity of the emitted light changes due to the hydrolysis of the KSF phosphor, and there is a risk that the desired light cannot be obtained from the semiconductor light-emitting device. That is, there is a risk that the reliability of the semiconductor light-emitting device will decrease. 【0005】 The present invention has been made in view of the above problems, and an object thereof is to provide a highly reliable semiconductor light-emitting device that suppresses deterioration of the phosphor. 【Means for Solving the Problems】 【0006】 The semiconductor light-emitting device according to the present invention comprises a lead frame including a first electrode body having an element mounting surface and a second electrode body disposed separately from the first electrode body; a semiconductor light-emitting element disposed on the element mounting surface of the first electrode body; a frame formed across the surfaces of the first electrode body and the second electrode body and forming a recess together with the surface of the element mounting surface and the second electrode body; and a phosphor portion made of a first resin material containing a first phosphor that fills the recess and covers the semiconductor light-emitting element, and is excited by light emitted from the semiconductor light-emitting element to emit fluorescence, wherein the first phosphor is a KSF phosphor and the first resin material is a phenyl-based silicone resin. [Brief explanation of the drawing] 【0007】 [Figure 1] This is a top view of the light-emitting device according to Example 1. [Figure 2] This is a cross-sectional view of the light-emitting device according to Example 1. [Figure 3] This is a cross-sectional view of the light-emitting device according to Example 1. [Figure 4] This is an enlarged cross-sectional view of the components of the light-emitting device according to Example 1. [Figure 5] This table shows the results of the verification of the light-emitting device according to Example 1 and the comparative example. [Figure 6] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 7] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 8] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 9] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 10] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 11] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 12] This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Figure 13]This is a cross-sectional view showing an example of the manufacturing process of the light-emitting device according to Example 1. [Modes for carrying out the invention] 【0008】 Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. In the drawings, identical components are denoted by the same reference numerals, and descriptions of redundant components are omitted. [Examples] 【0009】 The configuration of the light-emitting device 100 according to Embodiment 1 will be explained using Figures 1 to 3. Figure 1 is a top view of the light-emitting device 100. Figure 2 is a cross-sectional view of the light-emitting device 100 shown in Figure 1 along line 2-2. Figure 3 is a cross-sectional view of the light-emitting device 100 shown in Figure 1 along line 3-3. In Figures 2 and 3, the vertical direction in the figures is the height direction of the light-emitting device 100. 【0010】 [Overview of the light-emitting device 100] The light-emitting device 100 is composed of a lead frame 11, a frame 13, a light-emitting element 15, a protective element 16, a sealing part 18, and a phosphor part 19. In Figure 1, the phosphor part 19 is omitted to avoid complexity in the illustration, and the sealing part 18 is hatched. Also in Figure 1, the center line CL is shown as a dashed line, passing through the center of the top surface of the light-emitting device 100 and bisecting the width of the light-emitting device 100 in the left-right direction in the figure. 【0011】 [Lead frame 11] First, the configuration of the lead frame 11 will be described. The lead frame 11 consists of a first electrode body 11A and a second electrode body 11B arranged on the same plane at a distance from each other. Each of the first electrode body 11A and the second electrode body 11B is a metal plate with a rectangular top surface shape. In the lead frame 11, as shown in Figure 1, the short side of the first electrode body 11A and the long side of the second electrode body 11B face each other. 【0012】 The gap between the first electrode body 11A and the second electrode body 11B is filled with an insulating resin material that constitutes the frame body 13. In other words, the first electrode body 11A and the second electrode body 11B are insulated from each other by the resin material that constitutes the frame body 13 therebetween. 【0013】 The first electrode body 11A is larger than the second electrode body 11B in size when viewed from above the light-emitting device 100, and the upper surface thereof is a light-emitting element mounting surface on which the light-emitting element 15 can be mounted. Also, the upper surface of the second electrode body 11B is a protective element mounting surface on which the protective element 16 can be mounted. 【0014】 As shown in FIG. 3, the first electrode body 11A has a convex portion 11P that protrudes laterally in a shield shape from a side surface including the long side of the first electrode body 11A. Similarly, the second electrode body 11B has a convex portion 11P that protrudes laterally in a shield shape from a side surface including the short side of the second electrode body 11B (not shown). In other words, each of the first electrode body 11A and the second electrode body 11B has a stepped structure including the convex portion 11P on the side surface. 【0015】 Each of the first electrode body 11A and the second electrode body 11B has a base material made of copper (Cu), and nickel (Ni) and silver (Ag) are laminated in this order on the surface of the base material. Hereinafter, the lamination notation of metals on the base material will also be described as Ni / Ag. 【0016】 Note that aluminum (Al), an iron-nickel-cobalt alloy (Fe-Ni-Co), etc. can also be used as the base material. Also, titanium (Ti) / gold (Au), Ni / Au, Ti / Ag, etc. can be used on the surface of the base material. 【0017】 [Frame body 13] Next, the frame body 13 will be described. The frame body 13 is a frame-shaped body that is formed along the outer edge of the upper surface of each of the first electrode body 11A and the second electrode body 11B, and forms a recess having the upper surfaces of the first electrode body 11A and the second electrode body 11B as the bottom surfaces. 【0018】 The inner surface 13S that forms the recess of the frame 13 is inclined outward so that the space within the recess expands upward. That is, the recess formed by the frame 13 and the lead frame 11 has an inverted pyramidal shape that is recessed downward. 【0019】 The end portion 11AE of the first electrode body 11A, including its short side, and the end portion 11BE of the second electrode body 11B, including its long side, protrude outward from the side of the frame 13, that is, they protrude and extend from the side. In other words, the frame 13 is formed to expose the respective ends 11AE of the first electrode body 11A and the end portion 11BE of the second electrode body 11B. 【0020】 As described above, the frame 13 has a filling portion 13A that fills the gap between the first electrode body 11A and the second electrode body 11B (see Figures 1 and 2). Furthermore, the frame 13 covers both sides including the long side of the first electrode body 11A and both sides including the short side of the second electrode body 11B, that is, from the entire side surface to the outer edge of the upper surface of each of the first electrode body 11A and the second electrode body 11B, thereby concealing the protrusion 11P (see Figure 3). 【0021】 The presence of protrusions 11P on the sides of the first electrode body 11A and the second electrode body 11B increases the contact area between the lead frame 11 and the frame 13 when the lead frame 11 is covered by the frame 13 in the same manner, compared to when the protrusions 11P are not provided. This increases the bonding force between the lead frame 11 and the frame 13, making it less likely for the frame 13 to peel off the lead frame 11. 【0022】 In this embodiment, the light-emitting device 100 is made of a thermoplastic PCT (polycyclohexylene dimethylene terephthalate) resin with heat resistance as the base material (medium resin), and contains titanium oxide (TiO2) particles, which are light-scattering particles. By using such a material, the frame 13 has the function of diffusely reflecting light incident on the frame 13. 【0023】 Furthermore, it has sufficient heat resistance to the heat (for example, around 240°C) when soldering the light-emitting device 100 to the circuit board. High-melting-point nylons such as PA6T and PA9T, as well as thermosetting resins such as epoxy resin, silicone resin, and acrylic resin, can be used instead of PCT resin. 【0024】 In order to provide such light scattering functionality, in the light-emitting device 100 of this embodiment, the particle size of the TiO2 particles in the frame 13 is set to 200-300 nm, and the amount of TiO2 particles added to the PCT resin is set to 16-54 wt%. 【0025】 [Emitting element 15] Next, the light-emitting element 15 will be described. The light-emitting element 15 has a rectangular top surface shape and is bonded to the upper surface of the first electrode body 11A of the lead frame 11 via an adhesive member 21. The light-emitting element 15 is a light-emitting diode (LED) having a semiconductor structure layer of aluminum gallium nitride (AlGaN) crystal system including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (none of which are shown). 【0026】 In the light-emitting device 100, an n-electrode (not shown) provided in the n-type semiconductor layer of the semiconductor structure layer and a first electrode body 11A are electrically connected via a bonding wire W1 made of gold (Au). Furthermore, a p-electrode (not shown) provided in the p-type semiconductor layer of the semiconductor structure layer and a second electrode body 11B are electrically connected via a bonding wire W2 made of Au. 【0027】 In the light-emitting device 100, the first electrode body 11A acts as the cathode electrode and the second electrode body 11B acts as the anode electrode. When an external voltage is applied and power is supplied to the light-emitting element 15, light is emitted from the light-emitting layer of the semiconductor structure layer. When the light-emitting element 15 is energized, blue light with a peak wavelength of approximately 450 nm is emitted from the light-emitting layer. 【0028】 The adhesive member 21 used to bond the light-emitting element 15 to the first electrode body 11A is made of a silsesquioxane (SQ)-based silicone resin as the base material, with TiO2 particles, which are light-scattering particles, included in it. By using such a material, the adhesive member 21 has the function of diffusely reflecting the light emitted from the light-emitting element 15 and incident on the adhesive member 21. 【0029】 Furthermore, SQ-type silicone resin has a higher Shore hardness than PCT resin or dimethyl-type silicone resin, resulting in a more stable connection when wire bonding is performed using bonding wire W1 or bonding wire W2. 【0030】 [Protection element 16] Next, the protection element 16 will be described. The protection element 16 has a rectangular top surface shape and is joined to the upper surface of the second electrode body 11B of the lead frame 11. The protection element 16 is a Zener diode (ZD) that prevents damage to the light-emitting element 15 by bypassing the current flowing in the reverse direction when a reverse voltage is applied to the electrodes of the light-emitting element 15. 【0031】 The protective element 16 has a bottom electrode (not shown) provided on its lower surface, which is joined to the second electrode body 11B via a conductive adhesive member 22. The adhesive member 22 is a so-called silver paste, which is an epoxy resin containing conductive silver (Ag) particles. Alternatively, a so-called epoxy solder containing tin-silver-copper (Sn-Ag-Cu) particles can also be used. 【0032】 Furthermore, in the light-emitting device 100, the upper electrode (not shown) provided on the upper surface of the protective element 16 and the first electrode body 11A are electrically connected via a bonding wire W3 made of Au. In other words, the protective element 16 is a top-and-bottom conductive ZD. 【0033】 As the protection element 16, in addition to a Zener diode, a varistor (variable resistor) can also be used to protect the light-emitting element 15 from surge currents that may momentarily exceed the steady state while power is supplied from an external source to drive the light-emitting element 15, and to maintain a constant voltage. 【0034】 [Sealing body part 18] Next, the sealing portion 18 will be described. The sealing portion 18 is a covering that extends from the middle of the inner surface 13S of the frame 13 to the upper surfaces of the first electrode body 11A and the second electrode body 11B, and is formed in a frame shape along the inner surface. That is, when viewed from inside the recess, the sealing portion 18 seals the interface between the frame-shaped portion of the frame 13 and the upper surfaces of the first electrode body 11A and the second electrode body 11B. The sealing portion 18 may also extend to the upper end of the inner surface 13S of the frame 13. 【0035】 As shown in Figure 1, the sealing portion 18 covers the area of ​​the upper surface of the first electrode body 11A within the recess, excluding the element mounting surface on which the light-emitting element 15 is provided. More specifically, the sealing portion 18 is formed to surround the light-emitting element 15 in a manner that does not come into contact with the adhesive member 21 or the light-emitting element 15. The sealing portion 18 does not need to cover the outer surface of the light-emitting element 15; for example, it may come into contact with the adhesive member 21 or cover the adhesive member 21. 【0036】 Furthermore, as shown in Figures 1 and 2, the sealing portion 18 covers the entire surface of the protective element 16 within the recess, while also covering the entire upper surface of the second electrode body 11B and the filling portion 13A of the frame 13. In other words, the sealing portion 18 is configured to seal (cover) both interface ends that are exposed within the recess formed by the frame 13 and the lead frame 11. 【0037】 Furthermore, the sealing portion 18 continuously covers the connection portion of the bonding wire W1 connected to the first electrode body 11A, the connection portion of the bonding wire W2 connected to the second electrode body 11B, and the connection portion of the bonding wire W3 connected to the upper electrode of the protective element 16. 【0038】 In the light-emitting device 100 of this embodiment, the sealing body 18, like the adhesive member 21, is made of a silsesquioxane-based silicone resin as the base material, with TiO2 particles, which are light-scattering particles, included. By using such a material, the sealing body 18 has the function of diffusely reflecting the light emitted from the light-emitting element 15 and incident on the sealing body 18. 【0039】 [Phosphor part 19] Next, the phosphor portion 19 will be described. The phosphor portion 19 is a covering formed by filling the recess formed by the lead frame 11 and the frame 13 while covering the light-emitting element 15 and the sealing portion 18. The height of the upper surface of the phosphor portion 19 is the same as the height of the upper surface of the frame-shaped portion that forms the recess of the frame 13. 【0040】 Here, the detailed configuration of the phosphor portion 19 will be described with reference to Figure 4. Figure 4 is a diagram showing the configuration of the phosphor portion 19. In Figure 4, the dashed line shows a part of the cross-section of the phosphor portion 19. 【0041】 As shown in Figure 4, the phosphor portion 19 contains a translucent medium resin 24 containing a first phosphor 25 and a second phosphor 26 that are excited by light emitted from the light-emitting element 15 and emit fluorescence at different wavelengths, as well as light-scattering particles 27 that have light-scattering properties. 【0042】 The medium resin 24 consists of a phenyl-based silicone resin. Specifically, the phenyl-based silicone resin used as the medium resin 24 has a main chain of siloxane bonds (Si-O-Si), as shown in Chemical Formula 1 below, with methyl groups (-CH3) and phenyl groups (-C6H5) bonded as side chains to the silicon (Si) in the siloxane bonds. 【0043】 [ka] 【0044】 The first phosphor 25 is a phosphor that emits red fluorescence with a peak wavelength of approximately 630 nm when it receives blue light emitted from the light-emitting element 15. In the light-emitting device 100, the first phosphor 25 is KSF(K2SiF6:Mn), which is a matrix crystal of potassium silicofluoride (K2SiF6) to which manganese (Mn) is added as an activator. 4+ It is a phosphor. 【0045】 A light-transmitting and moisture-resistant protective film 25F is formed on the surface of the first phosphor 25. The protective film 25F is, for example, alumina (Al2O3). The protective film 25F is formed, for example, by atomic layer deposition (ALD). In the light-emitting device 100 of this embodiment, the thickness of the protective film 25F is set to 10 to 100 nm. 【0046】 Furthermore, in order to further improve the moisture resistance of the KSF phosphor constituting the first phosphor 25, the first phosphor 25 may be composed of a KSF phosphor and a Mn-free K2SiF6 layer formed to cover the surface of the KSF phosphor, and a protective film 25F may be formed on this K2SiF6 layer. 【0047】 The second phosphor 26 is a phosphor that emits green fluorescence with a peak wavelength of approximately 540 nm when it receives blue light emitted from the light-emitting element 15. In the light-emitting device 100, the second phosphor 26 is β-SiAlON (β-SiAlON:Eu) to which europium (Eu) is added as an activator. 2+ It is a phosphor. 【0048】 In the light-emitting device 100 of this embodiment, the particle size of the first phosphor 25 and the second phosphor 26 is set to 10 to 35 μm, and the amount of each phosphor added to the medium resin 24 is set to 35 wt%. Furthermore, the weight mixing ratio of the first phosphor 25 and the second phosphor 26 to the medium resin 24 is set to 70:30. 【0049】 When blue light emitted from the light-emitting element 15 enters the phosphor portion 19, a portion of it passes through the medium resin 24, while the other portion excites the first phosphor 25 and the second phosphor 26, causing fluorescence to be emitted from the excited phosphors. 【0050】 Therefore, from the upper surface of the phosphor section 19, excitation light that has passed through the medium resin 24 without contributing to fluorescence generation, and fluorescence emitted from the first phosphor 25 and the second phosphor 26 are emitted. As a result, white light, which is a mixture of blue light, red fluorescence, and green fluorescence, is emitted from the upper surface of the phosphor section 19. In other words, the upper surface of the phosphor section 19 is the light-emitting surface of the light-emitting device 100. 【0051】 In the light-emitting device 100, the light-scattering particles 27 are made of yttrium phosphate (YPO4), which has excellent forward scattering properties. In order to give the light-scattering particles 27 moisture resistance, a protective film made of Al2O3 may be formed on the surface of the light-scattering particles 27, similar to the first phosphor 25. 【0052】 In addition to YPO4, other materials such as alumina (Al2O3), titania (TiO2), and zirconia (ZrO2) can also be used as the light-scattering particles 27. Note that when using alumina, titania, or zirconia, a protective film to provide moisture resistance is not required. 【0053】 In the light-emitting device 100 of this embodiment, the phosphor section 19 is made of a medium resin 24 made of phenyl-based silicone resin, in which a first phosphor 25 which is a KSF phosphor and a second phosphor 26 which is a β-sialon phosphor are contained. 【0054】 Here, the KSF phosphor has the property of hydrolyzing when it comes into contact with moisture. Specifically, when the KSF phosphor comes into contact with moisture, the decomposition of the KSF phosphor proceeds according to the following chemical formula 2, and manganese dioxide (MnO2) and hydrogen fluoride (HF) are produced. 【0055】 [ka] 【0056】 In the light-emitting device 100, as described above, the KSF phosphor and β-sialon phosphor are excited by the excitation light (blue light) emitted from the light-emitting element 15 and emit fluorescence, causing white light, which is a mixture of blue light, red fluorescence, and green fluorescence, to be emitted from the upper surface of the phosphor section 19. 【0057】 For example, in a light-emitting device that generates white light by mixing blue, red, and green light, if hydrolysis of the KSF phosphor progresses, the red component that makes up the white light will decrease, potentially disrupting the balance of blue, red, and green light emission intensities. 【0058】 For example, if only the KSF phosphor undergoes hydrolysis within the medium resin 24 and the red component decreases, the light emitted from the light-emitting device 100 may experience a chromatic shift, where the original white chromaticity shifts towards cyan (the complementary color of red). In other words, it may become impossible to obtain white light of the desired chromaticity from the light-emitting device 100. 【0059】 Furthermore, the HF produced by the chemical formula 2 described above is strongly acidic and harmful to the medium resin. Therefore, for example, if a silicone resin is used as the medium resin, the HF may break the siloxane bonds of the silicone resin, potentially leading to softening and deterioration due to the reduction of the medium resin's molecular weight. For example, the reduced molecular weight of the medium resin may leach out as bleeding, causing phenomena such as shrinkage and discoloration of the silicone resin. 【0060】 Furthermore, the MnO2 produced by the chemical formula 2 described above has a brownish appearance, and when it is produced in the medium resin, the phosphor portion 19 appears to have changed color to yellow or brown. When this happens, there is a risk that the light transmittance of the phosphor portion 19 will decrease. 【0061】 If hydrolysis of the KSF phosphor progresses within the phosphor section 19, the reduction in the red component as described above may cause a shift in the chromaticity of the emitted light and deterioration of the medium resin, potentially preventing the desired light from being obtained from the light-emitting device 100. In other words, the reliability of the light-emitting device may be reduced. 【0062】 In the light-emitting device 100 of this embodiment, the medium resin 24 used in the phosphor portion 19 is made of a phenyl-based silicone resin, as described above. The phenyl-based silicone resin used for the medium resin 24 has a bulky structure (side chains) at the molecular level, in which the phenyl groups are sterically bulky. Due to this structure (side chains), the phenyl-based silicone resin has moisture resistance, making it difficult for moisture to penetrate into the resin. 【0063】 Therefore, in the light-emitting device 100 of this embodiment, since the phosphor portion 19 is formed of a medium resin having such properties, even if moisture adheres to the surface of the phosphor portion 19, for example, the attached moisture is less likely to penetrate. In other words, moisture is less likely to reach the first phosphor 25, which is a KSF phosphor. As a result, hydrolysis of the KSF phosphor is less likely to occur in the light-emitting device 100 of this embodiment. 【0064】 Furthermore, because phenyl-based silicone resins have a bulky structure (side chains) as described above, they can suppress the diffusion of not only moisture but also impurities such as corrosive gases. Therefore, even if moisture permeates through the medium resin 24 of the phosphor portion 19 and the KSF phosphor undergoes hydrolysis due to the permeated moisture, the phenyl groups act as steric hindrance to the HF produced by the hydrolysis. As a result, it becomes difficult for HF to reach the siloxane bonds in the silicone resin, and degradation due to decomposition of the main chain and side chains of the medium resin 24 by HF is less likely to occur. 【0065】 Furthermore, in the light-emitting device 100 of this embodiment, a protective film 25F made of moisture-resistant Al2O3 is formed on the surface of the first phosphor 25, which is a KSF phosphor. Therefore, the moisture resistance of the first phosphor 25 itself can be improved compared to when the protective film 25F is not formed. In other words, hydrolysis of the first phosphor 25 can be suppressed. 【0066】 Furthermore, in the light-emitting device 100 of this embodiment, the interface between the lead frame 11 and the frame 13 within the recess of the light-emitting device 100 is sealed by the sealing body 18. Therefore, it is possible to suppress the intrusion of impurities such as moisture and corrosive gases into the recess through this interface. 【0067】 In particular, the light density of blue light is high near the light-emitting element 15, and the temperature is high due to the heat generated by the light-emitting element 15, creating an environment that promotes the hydrolysis of the KSF phosphor. Therefore, by providing the sealing element 18, the hydrolysis of the KSF phosphor in this environment can be suppressed. In addition, delamination between the lead frame 11 and the frame 13 can also be prevented. 【0068】 In the light-emitting device 100 of this embodiment, the phosphor portion 19 can be prevented from deteriorating by the three components described above: improved moisture resistance of the medium resin 24 by using a phenyl-based silicone resin for the medium resin 24; improved moisture resistance of the first phosphor 25 by forming a protective film 25F on the surface of the first phosphor 25; and suppression of impurity intrusion by sealing the interface between the lead frame 11 and the frame 13 with the sealing portion 18. Therefore, the light-emitting device 100 of this embodiment can provide a highly reliable light-emitting device. 【0069】 In this embodiment, the light-emitting device 100 only needs to achieve improved moisture resistance of the medium resin 24 by using a phenyl-based silicone resin for at least one of the three components described above, and it is not necessary to form a protective film 25F on the first phosphor 25 or a sealing body 18 in the recess. 【0070】 In this embodiment, the light-emitting device 100 does not necessarily require the protective element 16. That is, the light-emitting element 15 may simply be bonded to the first electrode body 11A of the lead frame 11. 【0071】 [Verification Test] The verification and results performed on the light-emitting device 100 of this embodiment and the light-emitting device of the comparative example will be explained below with reference to Figure 5. Figure 5 is a table showing top view photographs after testing of the example sample and the comparative sample, which is a comparative example, having the configuration of the light-emitting device 100. 【0072】 First, let me explain the comparative sample. The light-emitting device used as the comparative sample differs from the light-emitting device 100 in that it uses a dimethyl silicone resin as the medium resin 24 in the phosphor section 19 of the light-emitting device 100. In other respects, such as the content ratio of the first phosphor 25 (KSF phosphor) and the second phosphor 26 (β-sialon phosphor) in the medium resin 24, it is the same as the light-emitting device 100. 【0073】 Next, I will explain the test details. This test involved conducting a humidity resistance and electrical current test on both the example sample and the comparative sample. Specifically, the example sample and the comparative sample were placed in an environment with a temperature of 85°C and a humidity of 85%, and the condition of each sample was observed after 1000 hours and 2000 hours while a current of 170mA was applied to each. 【0074】 In addition, in this test, the time-dependent changes in the surface state of each sample were confirmed when the thickness of the protective film 25F formed on the surface of the first phosphor 25, the KSF phosphor, was set to 0 nm (no protective film 25F), 10 nm, 30 nm, 50 nm, 70 nm, and 100 nm. 【0075】 As shown in the table in Figure 5, first, comparing the changes in the surface state over time between the example sample and the comparison sample when the thickness of the protective film 25F is 0 nm, i.e., when the protective film 25F is not formed, in the example sample, not much change was observed on the surface between 1000 hours and 2000 hours, whereas in the comparison sample, discoloration of the phosphor portion 19 was observed, especially after 2000 hours. 【0076】 Furthermore, in comparative samples with protective film 25F thicknesses ranging from 10 to 50 nm, discoloration of the phosphor portion 19 was observed after 2000 hours. This phenomenon was particularly observed in the center of the upper surface of the phosphor portion 19, i.e., the region directly above the light-emitting element 15. 【0077】 Here, the dimethyl silicone resin used as the medium resin 24 in the phosphor portion 19 of the comparative sample has excellent light resistance and heat resistance, but it has large gaps within the resin, and therefore is prone to moisture penetration. In other words, dimethyl silicone resin has relatively low moisture resistance. 【0078】 The reason why changes were observed on the surface of the comparative sample after 2000 hours is thought to be that, due to the properties of dimethyl silicone resin as described above, moisture penetrated into the medium resin 24 of the phosphor portion 19 of the comparative sample, and upon contact with the KFS phosphor contained in the medium resin 24, hydrolysis of the KFS phosphor occurred. In other words, it is thought that when dimethyl silicone resin is used as the medium resin 24 of the phosphor portion 19, the deterioration of the phosphor portion 19 cannot be suppressed. 【0079】 On the other hand, in the example samples, even when the protective film 25F was not formed on the surface of the first phosphor 25, and even when the thickness of the protective film 25F was increased, not much change was observed on the surface of the phosphor portion 19. This is thought to be because the use of a phenyl-based silicone resin in the medium resin 24 greatly improved the moisture resistance of the medium resin 24, thereby suppressing the penetration of moisture into the phosphor portion 19. 【0080】 Thus, in the example sample having the configuration of the light-emitting device 100 of this embodiment, by using a phenyl-based silicone resin for the medium resin 24 of the phosphor portion 19, the degradation of the phosphor portion 19 was suppressed compared to the comparative sample. Furthermore, in the example sample, by setting the thickness of the protective film 25F in the range of 10 to 100 nm, a good surface condition of the phosphor portion 19 was maintained. 【0081】 [Manufacturing method for light-emitting device 100] The manufacturing method of the light-emitting device 100 will be described below using Figures 6 to 13. Each of Figures 6 to 13 is a top view showing an example of the manufacturing process of the light-emitting device 100. Note that the lead frame 11 is connected in a number equal to the number of light-emitting devices 100 manufactured at one time, but only two are shown as examples in Figures 6 to 13. 【0082】 The light-emitting device 100 is manufactured by a procedure that includes a lead frame preparation step of preparing a plate material including a lead frame 11, a frame formation step of forming a frame 13, an element bonding step of bonding the light-emitting element 15 and a protective element 16 to the lead frame 11, a sealing part 18 formation step of forming a sealing part 18, a phosphor part formation step of forming a phosphor part 19, and a pieceization step. 【0083】 [Lead frame preparation process] First, a single sheet of copper material is prepared, and this prepared sheet material is processed by punching it out with a die. Specifically, as shown in Figure 6, the sheet material that will become the first electrode body 11A and the second electrode body 11B is formed in such a way that a portion of each is supported by the support frame FL. 【0084】 At this time, a gap 11G is also provided between the first electrode body 11A and the second electrode body 11B. The protrusions 11P of the first electrode body 11A and the second electrode body 11B are formed, for example, by etching the back surfaces of the first electrode body 11A and the second electrode body 11B. 【0085】 Next, Ni / Ag plating layers are formed on the surfaces of the plate materials that will become the first electrode body 11A and the second electrode body 11B by electroplating. This forms a lead frame 11 consisting of the first electrode body 11A and the second electrode body 11B. 【0086】 Furthermore, metals other than Cu, such as aluminum (Al) or iron-nickel-cobalt alloy (Fe-Ni-Co), can be used as the base material for the lead frame 11. In addition, for the plating layer, titanium (Ti) / Au, Ni / Au, Ti / Ag, etc., can be used in addition to Ni / Ag. 【0087】 Furthermore, the method for processing the plate material to prepare the first electrode body 11A and the second electrode body 11B is not limited to punching with a die, but may also be used, for example, by etching using a resist mask. 【0088】 [Frame formation process] Next, as shown in Figure 7, a frame 13 is formed on the lead frame 11. Specifically, the lead frame 11 with a support frame FL is placed and fixed in a mold having a recess by insert molding, and a precursor resin containing light-scattering particles, TiO2 particles, in a thermoplastic resin, PCT resin is injected under pressure into the recess. 【0089】 Subsequently, by heating the mold at 150°C for 120 minutes, a lead frame 11 with a frame 13 formed is obtained. At this time, a filling portion 13A is also formed to fill the gap 11G between the first electrode body 11A and the second electrode body 11B. 【0090】 In addition to PCT resin, other thermoplastic resins such as PA6T resin and PA9T resin can also be used as the medium resin for the frame 13. Thermosetting resins such as silicone resin, epoxy resin, and acrylic resin can also be used. Furthermore, in addition to TiO2, alumina (Al2O3) and zirconia (ZrO2) can also be used as light-scattering particles. 【0091】 [Element bonding process] Next, as shown in Figure 8, the light-emitting element 15 and the protective element 16 are bonded to the lead frame 11. Specifically, first, an insulating adhesive (die attach material), which is an adhesive member 21, is applied to the light-emitting element mounting area on the upper surface of the first electrode body 11A. Next, the light-emitting element 15 is placed on the adhesive member 21 applied to the upper surface of the first electrode body 11A using a mounter. 【0092】 Next, a conductive adhesive (die attach material), which is an adhesive member 22, is applied to the protective element mounting area on the upper surface of the second electrode body 11B. Then, the protective element 16 is placed on the adhesive member 22 applied to the upper surface of the second electrode body 11B using a mounter. After that, the lead frame 11 is heated at approximately 180°C for 30 minutes to bond and mount the light-emitting element 15 and the protective element 16. 【0093】 Finally, the n electrode of the light-emitting element 15 and the first electrode body 11A are connected via bonding wire W1, and the p electrode of the light-emitting element 15 and the second electrode body 11B are connected via bonding wire W2. In addition, the upper electrode of the protective element 16 and the first electrode body 11A are connected via bonding wire W3. 【0094】 [Sealing body forming process] Next, a sealing portion 18 is formed along the frame-shaped portion that forms the recess of the frame body 13. First, as shown in Figure 9, an appropriate amount of precursor resin 18M, which contains TiO2 particles with a particle size of 1 nm to 500 nm in SQ resin, is applied to the short side end of the first electrode body 11A and to the filling portion 13A of the frame body 13, respectively. 【0095】 Afterward, by allowing it to stand for a while, as shown in Figure 10, the precursor resin 18M applied to the short side end of the first electrode body 11A and to the filling portion 13A of the frame body 13 will wet and spread from their respective application points along the inner surface 13S of the frame body 13 toward the center line CL. 【0096】 Specifically, the precursor resin 18M applied to the short side end of the first electrode body 11A spreads out from the application point, covering the interface between the short side of the first electrode body 11A and the frame 13, and then covering the interface between the long side of the first electrode body 11A and the frame 13. 【0097】 Meanwhile, the precursor resin 18M applied on the filling section 13A spreads along the filling section 13A from the application site, covering the interface between the long and short sides of the second electrode body 11B and the frame body 13, as well as the interface between the long side of the first electrode body 11A and the frame body 13. 【0098】 As the precursor resin 18M wets and spreads in this manner, the precursor resin 18M applied to the short side end of the first electrode body 11A and the filling portion 13A of the frame body 13 eventually merge with each other near the center line CL, as shown in Figure 11. Subsequently, the sealing portion 18 is formed by heating at 180°C for 5 minutes. 【0099】 In this configuration, the sealing portion 18 covers the connection between the first electrode body 11A and the bonding wire W1, the connection between the second electrode body 11B and the bonding wire W2, and the connection between the upper electrode of the protective element 16 and the bonding wire W3. In other words, the sealing portion 18 seals the connection between each electrode body and the bonding wires W1 to W3. 【0100】 [Phosphor Formation Process] Next, as shown in Figure 12, a phosphor portion 19 is formed to cover the light-emitting element 15 by filling the recess formed by the lead frame 11 and the frame 13. Specifically, first, a precursor resin containing KSF phosphor, β-sialon phosphor, and YPO4 particles in a phenyl-based silicone resin, which will become the phosphor portion 19, is filled into the recess. 【0101】 By filling the recess with this precursor resin, the upper and side surfaces of the light-emitting element 15 are covered with the precursor resin. Subsequently, the phosphor portion 19 is formed by curing the resin material by heating it at 150°C for 1 hour. 【0102】 [Singulation process] Finally, as shown in Figure 13, each of the light-emitting devices 100, which are connected in the number of units to be manufactured at one time, is cut from the support frame FL using tie bars to separate them into individual elements. Through these steps, the light-emitting devices 100 can be manufactured. 【0103】 The light-emitting device 100 described in the above embodiment can be used, for example, as a light source for surface-mount (SMD) type LED packages or as a light source for PLCC (Plastic leaded chip carrier) type LED packages. [Explanation of symbols] 【0104】 100 Light-emitting devices 11 Lead Frame 13 Frame 15 Light-emitting element 16 Protective elements 18 Sealing body part 19. Phosphor section 21, 22 Adhesive members 24 Medium resin 25. First phosphor 26. Second phosphor 27 Light scattering particles

Claims

[Claim 1] A lead frame including a first electrode body having an element mounting surface and a second electrode body disposed at a distance from the first electrode body, A semiconductor light-emitting element is disposed on the element mounting surface of the first electrode body, A frame formed across the surfaces of the first electrode body and the second electrode body, and together with the element mounting surface and the surface of the second electrode body, The material includes a phosphor portion made of a first resin material that fills the recess and covers the semiconductor light-emitting element, and which is excited by light emitted from the semiconductor light-emitting element and emits fluorescence, The first phosphor is a KSF phosphor, A semiconductor light-emitting device characterized in that the first resin material is a phenyl-based silicone resin. [Claim 2] The semiconductor light-emitting apparatus according to claim 1, characterized in that a moisture-resistant protective film is formed on the surface of the first phosphor. [Claim 3] The aforementioned protective film is made of Al ２ O ３ The semiconductor light-emitting apparatus according to claim 2, characterized by comprising the above. [Claim 4] The semiconductor light-emitting apparatus according to any one of claims 1 to 3, characterized in that it has a sealing portion made of a second resin material that is formed in a frame shape along the inner surface of the frame, extending from the inner surface of the frame that forms the recess to the region of the surfaces of the first electrode body and the second electrode body along the inner surface of the frame. [Claim 5] The semiconductor light-emitting apparatus according to claim 4, characterized in that the second resin material is a silsesquioxane-based silicone resin. [Claim 6] The semiconductor light-emitting apparatus according to claim 4, characterized in that the sealing body portion is based on the second resin material and contains light-scattering particles. [Claim 7] The semiconductor light-emitting apparatus according to any one of claims 1 to 3, characterized in that the phosphor portion includes a second phosphor that emits fluorescence at a shorter wavelength than the first phosphor. [Claim 8] The semiconductor light-emitting apparatus according to claim 7, characterized in that the second phosphor is a β-sialon phosphor. [Claim 9] The semiconductor light-emitting apparatus according to any one of claims 1 to 3, characterized in that the phosphor portion includes light-scattering particles having light-scattering properties. [Claim 10] The aforementioned light scattering particles are YPO ４ The semiconductor light-emitting apparatus according to claim 9, characterized by comprising the above. [Claim 11] The semiconductor light-emitting apparatus according to claim 9, characterized in that a moisture-resistant protective film is formed on the surface of the light-scattering particles.

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