High-frequency modules and communication devices

Abstract

To make it smaller. [Solution] The high-frequency module 100 comprises a mounting substrate 1 and a first via component 4. The mounting substrate 1 has a first main surface 11 and a second main surface 12 that face each other. The first via component 4 is located on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 is covered by the first ceramic substrate 41.

Description

【Technical Field】 【0001】 The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a mounting substrate and a communication device including the high-frequency module. 【Background Art】 【0002】 Patent Document 1 discloses a high-frequency power module including a wiring board having mounting electrodes and connection terminals disposed on the lower surface of the wiring board. 【0003】 Patent Document 1 discloses, as an example of the connection terminals, post electrodes formed by plating on the mounting electrodes of the wiring board. 【Prior Art Documents】 【Patent Documents】 【0004】 【Patent Document 1】 International Publication No. 2019 / 216300 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0005】 In a high-frequency module, miniaturization of the high-frequency module is required, and miniaturization of the connection terminals may be required. However, when the diameter of the post electrodes formed by plating on the mounting substrate of the wiring board becomes small and the aspect ratio becomes large, it becomes difficult to form the post electrodes, and the post electrodes are likely to break. 【0006】 An object of the present invention is to provide a high-frequency module and a communication device capable of achieving miniaturization. 【Means for Solving the Problems】 【0007】 A high-frequency module according to one aspect of the present invention comprises a mounting substrate and a first via component. The mounting substrate has a first main surface and a second main surface facing each other. The first via component is arranged on the second main surface of the mounting substrate. The first via component comprises a first ceramic substrate and a first via conductor. The first via conductor is connected to the mounting substrate and its sides are covered by the first ceramic substrate. 【0008】 A communication device according to one aspect of the present invention comprises a high-frequency module according to the above-described aspect and a signal processing circuit. The signal processing circuit is connected to the high-frequency module. [Effects of the Invention] 【0009】 The high-frequency module and communication device according to the above embodiment of the present invention can be miniaturized. [Brief explanation of the drawing] 【0010】 [Figure 1] Figure 1 is a bottom view of a high-frequency module according to Embodiment 1. [Figure 2] Figure 2 shows the same high-frequency module, and is a cross-sectional view taken along line II-II in Figure 1. [Figure 3] Figure 3 shows the same high-frequency module, and is a cross-sectional view taken along line III-III in Figure 1. [Figure 4] Figure 4 is a perspective view of the first via component in the same high-frequency module. [Figure 5] Figure 5 is a perspective view of the first via component in the same high-frequency module. [Figure 6] Figure 6 is a perspective view of the second via component in the same high-frequency module. [Figure 7] Figure 7 is a circuit block diagram of a communication device equipped with the same high-frequency module. [Figure 8] Figure 8 is a bottom view of the high-frequency module according to Embodiment 2. [Figure 9] Figure 9 is a perspective view of the first via component in the same high-frequency module. [Figure 10] FIG. 10 is a perspective view of a second via component in the same high-frequency module. [Figure 11] FIG. 11 is a bottom view of the high-frequency module according to Embodiment 3. [Figure 12] FIG. 12 is a bottom view of the high-frequency module according to Embodiment 4. [Figure 13] FIG. 13 is a bottom view of the high-frequency module according to Embodiment 5. [Figure 14] FIG. 14 is a bottom view of the high-frequency module according to Embodiment 6. [Figure 15] FIG. 15 is a bottom view of the high-frequency module according to Embodiment 7. [Figure 16] FIG. 16 is a bottom view of the high-frequency module according to Embodiment 8. 【MODE FOR CARRYING OUT THE INVENTION】 【0011】 Hereinafter, Embodiments 1 to 8 and the like will be described with reference to the drawings. The drawings referred to in the following Embodiments 1 to 8 and the like are schematic drawings, and the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensions, and the ratios of the sizes and the ratios of the thicknesses between the components do not necessarily reflect the actual dimensional ratios. 【0012】 (Embodiment 1) The high-frequency module 100 and the communication device 300 according to Embodiment 1 will be described with reference to FIGS. 1 to 7. 【0013】 As shown in FIG. 1, the high-frequency module 100 according to Embodiment 1 includes a mounting substrate 1 and a plurality of first via components 4. As shown in FIGS. 2 and 3, the mounting substrate 1 has a first main surface 11 and a second main surface 12 that face each other. As shown in FIG. 1, the plurality of first via components 4 are arranged on the second main surface 12 of the mounting substrate 1. Further, the high-frequency module 100 further includes a plurality of second via components 5. The plurality of second via components 5 are arranged on the second main surface 12 of the mounting substrate 1. 【0014】 Also, as shown in FIG. 2, the high-frequency module 100 includes a plurality of first electronic components 2 and a second electronic component 3. The plurality of first electronic components 2 are arranged on the first main surface 11 of the mounting substrate 1. The second electronic component 3 is arranged on the second main surface 12 of the mounting substrate 1. 【0015】 The high-frequency module 100 further includes a first resist layer 14 and a second resist layer 15. The first resist layer 14 covers a part of the first main surface 11 of the mounting substrate 1. The second resist layer 15 covers a part of the second main surface 12 of the mounting substrate 1. Note that the first resist layer 14 and the second resist layer 15 may be components of the mounting substrate 1. 【0016】 The high-frequency module 100 further includes a first resin layer 6 and a second resin layer 7. The first resin layer 6 covers the first resist layer 14 and the plurality of first electronic components 2. The second resin layer 7 covers the second resist layer 15, the plurality of first via components 4, the plurality of second via components 5, and the second electronic component 3. 【0017】 The high-frequency module 100 further includes an external shield layer 8. The external shield layer 8 covers the outer peripheral surface 13 of the mounting substrate 1, the main surface 61 and the outer peripheral surface 63 of the first resin layer 6, and the outer peripheral surface 73 of the second resin layer 7. Note that in FIG. 1, the illustration of the second resist layer 15, the second resin layer 7, and the external shield layer 8 is omitted. 【0018】 The high-frequency module 100 according to Embodiment 1 is used in a communication device 300, for example, as shown in Figure 7. The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited to this, and may also be a wearable device (e.g., a smartwatch). The high-frequency module 100 is a module that supports, for example, 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 is a module that supports, for example, carrier aggregation and dual connectivity. The high-frequency module 100 is, for example, a transceiver module having a high-frequency circuit including a power amplifier, a transmit filter, an output matching circuit, a low-noise amplifier, a receive filter, and an input matching circuit, but is not limited to a transceiver module. The high-frequency module 100 may be, for example, a transmitting module having a high-frequency circuit including a power amplifier, a transmitting filter, and an output matching circuit, or a receiving module having a high-frequency circuit including a low-noise amplifier, a receiving filter, and an input matching circuit. 【0019】 Each of the multiple electronic components, including multiple first electronic components 2 and multiple second electronic components 3, is, for example, an IC chip, a transmit filter, a receive filter, a duplexer, a surface-mount electronic component, a multiplexer, or a coupler. An IC chip is, for example, a power amplifier, a low-noise amplifier, a switch, or a controller. Each of the transmit filter and the receive filter is, for example, a surface acoustic wave filter, a bulk acoustic wave filter, or an LC filter. The electronic component may also be an electronic component that includes multiple filters (for example, surface acoustic wave filters). A surface-mount electronic component is, for example, a chip inductor or a chip capacitor. Note that the number of second electronic components 3 is not limited to one, but may be multiple. 【0020】 Hereinafter, each component of the high-frequency module 100 according to this embodiment will be described with reference to the drawings. 【0021】 The high-frequency module 100 comprises a mounting substrate 1, a first resist layer 14, a second resist layer 15, a plurality of first electronic components 2, a second electronic component 3, a plurality of first via components 4, a plurality of second via components 5, a first resin layer 6, a second resin layer 7, and an external shielding layer 8. 【0022】 (1.1) Mounting board As shown in Figures 2 and 3, the mounting substrate 1 has a first main surface 11 and a second main surface 12. The first main surface 11 and the second main surface 12 face each other. More specifically, the first main surface 11 and the second main surface 12 face each other in the thickness direction D1 of the mounting substrate 1. The mounting substrate 1 is a substrate for arranging a plurality of electronic components, and is, for example, a rectangular plate. The first main surface 11 and the second main surface 12 are, for example, rectangular in shape. When the high-frequency module 100 is placed on an external substrate (for example, a motherboard), the second main surface 12 of the mounting substrate 1 faces the external substrate. The mounting substrate 1 also has an outer peripheral surface 13. The outer peripheral surface 13 of the mounting substrate 1 includes four sides connecting the outer edge of the first main surface 11 and the outer edge of the second main surface 12, but does not include the first main surface 11 and the second main surface 12. 【0023】 The mounting substrate 1 has a plurality of dielectric layers (not shown) and a plurality of conductive layers (not shown). The mounting substrate 1 is, for example, a multilayer substrate having a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 1. 【0024】 Each of the multiple conductive layers contains one or more conductive portions in a plane perpendicular to the thickness direction D1 of the mounting substrate 1. The multiple conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper. The mounting substrate 1 also has multiple via conductors. 【0025】 The multiple conductive layers include a ground layer (not shown). The ground layer is a layer to which the ground potential (reference potential) is supplied and is provided inside the mounting substrate 1. When the high-frequency module 100 is placed on an external substrate (e.g., a motherboard), the ground layer is connected to the ground of the external substrate via via conductors or the like that of the mounting substrate 1 and maintained at the ground potential. 【0026】 The mounting substrate 1 is, for example, a printed circuit board. However, the mounting substrate 1 is not limited to a printed circuit board; for example, it may be an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. 【0027】 In the mounting substrate 1, among the multiple conductive layers, one conductive layer (hereinafter also referred to as the first conductive layer) related to the first main surface 11 of the mounting substrate 1 contains multiple conductor portions, each containing multiple first pad electrodes (land electrodes) 16. The main surfaces of the multiple first pad electrodes 16 constitute a part of the first main surface 11 of the mounting substrate 1. The material of the multiple first pad electrodes 16 includes copper. 【0028】 In the mounting substrate 1, among the multiple conductive layers, one conductive layer (hereinafter also referred to as the second conductive layer) related to the second main surface 12 of the mounting substrate 1 includes multiple second pad electrodes (land electrodes) 17 and multiple third pad electrodes (land electrodes) 18. The material of the multiple second pad electrodes 17 and the multiple third pad electrodes 18 includes copper. 【0029】 In the mounted substrate 1, one of the multiple conductive parts contained in one of the conductive layers (excluding the first and second conductive layers) constitutes the ground layer. Therefore, the ground layer material contains copper. The ground layer is in contact with the outer shield layer 8. More specifically, the side edge of the ground layer is in contact with the outer shield layer 8. Therefore, the ground electrode layer is directly connected to the outer shield layer 8. 【0030】 (1.2) First resist layer and second resist layer The first resist layer 14 is located on the first main surface 11 of the mounting substrate 1. The first resist layer 14 is, for example, a solder resist. The first resist layer 14 is patterned to expose a plurality of first pad electrodes 16. The first resist layer 14 has a plurality of openings 141 that correspond one-to-one with the plurality of first pad electrodes 16. In this embodiment, in a plan view from the thickness direction D1 of the mounting substrate 1, each of the plurality of openings 141 is smaller than the corresponding first pad electrode 16 among the plurality of first pad electrodes 16. The first resist layer 14 is an over-resist layer that covers a portion of each of the plurality of first pad electrodes 16. Each of the plurality of openings 141 may be larger than the corresponding first pad electrode 16 among the plurality of first pad electrodes 16. 【0031】 The second resist layer 15 is located on the second main surface 12 of the mounting substrate 1. The second resist layer 15 is, for example, a solder resist. The second resist layer 15 is patterned to expose a plurality of second pad electrodes 17 and a plurality of third pad electrodes 18. The plurality of second resist layers 15 have a plurality of openings 151 that correspond one-to-one with the plurality of pad electrodes, including the plurality of second pad electrodes 17 and the plurality of third pad electrodes 18. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the plurality of openings 151 is smaller than the corresponding pad electrode among the plurality of pad electrodes. The second resist layer 15 is an over-resist layer that covers a portion of each of the plurality of pad electrodes. Each of the plurality of openings 151 may be larger than the corresponding pad electrode among the plurality of pad electrodes. 【0032】 (1.3) First Electronic Component As shown in Figure 2, a plurality of first electronic components 2 are arranged on the first main surface 11 of the mounting substrate 1. "The first electronic components 2 are arranged on the first main surface 111 of the mounting substrate 1" means that the first electronic components 2 are mounted (mechanically connected) to the first main surface 111 of the mounting substrate 1, and that the first electronic components 2 are electrically connected to the mounting substrate 1 (or appropriate first pad electrodes 16 of the mounting substrate 1). Each of the plurality of first electronic components 2 is mechanically and electrically connected to the first main surface 11 of the mounting substrate 1 by a plurality of joints 9. The plurality of first electronic components 2 are circuit components of the high-frequency circuit of the high-frequency module 100. The material of the plurality of joints 9 corresponding to each of the plurality of first electronic components 2 is, for example, solder. The plurality of joints 9 may be components of the first electronic component 2, or they may be components interposed between the first electronic component 2 and the first main surface 11 of the mounting substrate 1. 【0033】 In a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple first electronic components 2 is, for example, rectangular. The multiple first electronic components 2 are, for example, filters, power amplifiers, switches, chip inductors, chip capacitors, etc. 【0034】 (1.4) Second Electronic Components As shown in Figures 1 and 2, the second electronic component 3 is located on the second main surface 12 of the mounting substrate 1. "The second electronic component 3 is located on the second main surface 12 of the mounting substrate 1" means that the second electronic component 3 is mounted (mechanically connected) to the second main surface 12 of the mounting substrate 1, and that the second electronic component 3 is electrically connected to the mounting substrate 1 (specifically to the appropriate second pad electrodes 17). The second electronic component 3 is mechanically and electrically connected to the second main surface 12 of the mounting substrate 1 by a plurality of joints 10. The second electronic component 3 is a circuit component of the high-frequency circuit of the high-frequency module 100. The material of the plurality of joints 10 corresponding to the second electronic component 3 is, for example, solder. The plurality of joints 10 may be components of the second electronic component 3, or they may be components interposed between the second electronic component 3 and the second main surface 12 of the mounting substrate 1. 【0035】 In a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the second electronic components 3 is, for example, rectangular. The second electronic component 3 is, for example, an IC chip including a low-noise amplifier. 【0036】 (1.5) First via component In this embodiment, each of the plurality of first via components 4 has a first ceramic substrate 41 and a plurality of first via conductors 42, as shown in Figure 1. Each of the plurality of first ceramic substrates 41 has a first main surface 411 and a second main surface 412 that face each other. The first main surface 411 and the second main surface 412 of the first ceramic substrate 41 face each other in the thickness direction D11 of the first ceramic substrate 41 (see Figures 4 and 5). In each of the plurality of first via components 4, the side surfaces 423 of the plurality of first via conductors 42 are covered by the first ceramic substrate 41. The first end surface 421 and the second end surface 422 of each of the plurality of first via conductors 42 in a direction parallel to the thickness direction D11 of the first ceramic substrate 41 are not covered by the first ceramic substrate 41. 【0037】 Each of the multiple first via conductors 42 is used as an external connection terminal for connecting the high-frequency module 100 to an external board. The external board is, for example, the motherboard of the communication device 300 (see Figure 7). Each of the multiple first via conductors 42 used as multiple external connection terminals in the first via component 4 is used as, for example, a signal terminal, a ground terminal, a power terminal, or a dummy terminal. Signal terminals are, for example, antenna terminals, signal input terminals, signal output terminals, and control terminals. The antenna terminal is a terminal connected to the antenna 310 of the communication device 300. The signal input terminal is a terminal connected to the signal processing circuit 301 of the communication device 300 to receive a transmission signal. The signal output terminal is a terminal connected to the signal processing circuit 301 of the communication device 300 to receive a reception signal. The control terminal is a terminal connected to the signal processing circuit 301 of the communication device 300 to receive a control signal. The ground terminal is, for example, a terminal electrically connected to the ground conductor portion of the external board to receive a ground potential. The power terminal is, for example, a terminal connected to the battery of the communication device 300. The dummy terminal is, for example, a terminal used to increase the parallelism of the first via component 4 with respect to the mounting board 1, an external board, etc., and is different from a terminal intended for electrical connection. In other words, the dummy terminal is a terminal used to prevent the first via component 4 from being mounted at an angle with respect to the mounting board 1, an external board, etc., and is not an essential terminal for the high-frequency module 100. 【0038】 The high-frequency module 100 comprises a plurality of (four in the example in Figure 1) first via components 4. In this embodiment, two of the plurality of first via components 4 have two first via conductors 42, and the remaining two first via components 4 have three first via conductors 42. Therefore, the high-frequency module 100 can use 10 first via conductors 42 as 10 external connection terminals. Each of the 10 first via conductors 42 is connected to the second main surface 12 of the mounting substrate 1 by a joint 19. More specifically, each of the 10 first via conductors 42 is connected to the corresponding third pad electrode 18 of a plurality of third pad electrodes 18 on the mounting substrate 1 via the joint 19. The joint 19 is solder, but is not limited to solder and may include a plurality of conductive particles and a binder. In other words, each of the 10 first via conductors 42 may be bonded to the third pad electrode 18 using a conductive adhesive (e.g., conductive paste). 【0039】 In the following, for the sake of explanation, a first via component 4 having two first via conductors 42 as shown in Figures 1 and 4 will be referred to as the first via component 4a, and a first via component 4 having three first via conductors 42 as shown in Figures 1 and 5 will be referred to as the first via component 4b. In the example of Figure 1, the multiple first via components 4 include two first via components 4a and two first via components 4b. 【0040】 Multiple first via components 4 are arranged on the second main surface 12 of the mounting substrate 1 such that the thickness direction D11 of the first ceramic substrate 41 and the thickness direction D1 of the mounting substrate 1 are parallel. "The thickness direction D11 of the first ceramic substrate 41 and the thickness direction D1 of the mounting substrate 1 are parallel" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the thickness direction D11 of the first ceramic substrate 41 and the thickness direction D1 of the mounting substrate 1 is 10 degrees or less. 【0041】 In a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple first via components 4 is rectangular. That is, in a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple first ceramic substrates 41 is rectangular. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the multiple first via components 4 is smaller than the mounting substrate 1. Each of the multiple first via conductors 42 is cylindrical. In each of the multiple first via components 4, in a plan view from the thickness direction D1 of the mounting substrate 1, the multiple first via conductors 42 are spaced apart in the longitudinal direction of the first ceramic substrate 41. In this embodiment, the diameter of each of the multiple first via conductors 42 is, for example, 150 μm or less, but may be greater than 150 μm. Also, the length (height) of each of the multiple first via conductors 42 in the thickness direction D11 of the first ceramic substrate 41 is, for example, 100 μm or more, but may be less than 100 μm. Furthermore, the distance between the centers of two adjacent first via conductors 42 among the multiple first via conductors 42 is, for example, 270 μm or less, but may be greater than 270 μm. 【0042】 The first ceramic substrate 41 in each of the multiple first via components 4 is, for example, LTCC. The material of the first ceramic substrate 41 in each of the multiple first via components 4 includes, for example, alumina and glass. The glass includes, for example, amorphous glass of the CaO-Al2O3-SiO2-B2O3 system. The material of the multiple first via conductors 42 in each of the multiple first via components 4 includes, for example, copper. 【0043】 The first via component 4 can be manufactured, for example, by a manufacturing method similar to that of an LTCC substrate. In the manufacturing method of the first via component 4, first, multiple ceramic green sheets that will form the basis of multiple first ceramic substrates 41 are prepared. Then, via holes are formed in each ceramic green sheet by laser processing or the like, conductive paste is charged into the via holes, and these multiple ceramic green sheets are stacked, pressed, and fired to obtain a multi-cavity substrate having multiple first via components 4. After that, the multi-cavity substrate is cut to obtain individual first via components 4. Each of the multiple ceramic green sheets contains alumina, glass, and an organic binder. The glass includes, for example, amorphous glass of the CaO-Al2O3-SiO2-B2O3 system. If the material of the first via conductor 42 contains Cu, the conductive paste is, for example, Cu paste. If the material of the first via conductor 42 contains Ag, the conductive paste is, for example, Ag paste. The firing temperature is, for example, 800°C to 1000°C. 【0044】 Furthermore, in each of the multiple first via components 4, the first ceramic substrate 41 is not limited to LTCC, but may be, for example, an alumina ceramic. In this case, the first via component 4 can be manufactured, for example, by the same manufacturing method as the HTCC substrate. Also in this case, the material of the multiple first via conductors 42 in each of the multiple first via components 4 includes, for example, tungsten or molybdenum. In addition, the first ceramic substrate 41 may be a low-temperature fired ceramic mainly composed of alumina, other than a low-temperature fired ceramic containing alumina and an amorphous glass of the CaO-Al2O3-SiO2-B2O3 system. 【0045】 (1.6) Second via component In this embodiment, each of the multiple (four in the example of Figure 1) second via components 5 has a second ceramic substrate 51 and a second via conductor 52, as shown in Figures 3 and 6. Each of the multiple second ceramic substrates 51 has a first main surface 511 and a second main surface 512 that face each other. The first main surface 511 and the second main surface 512 of the second ceramic substrate 51 face each other in the thickness direction D21 of the second ceramic substrate 51 (see Figure 6). In each of the multiple second via components 5, the side surface 523 of the second via conductor 52 is covered by the second ceramic substrate 51. The first end surface 521 and the second end surface 522 of the second via conductor 52 in a direction parallel to the thickness direction D21 of the second ceramic substrate 51 are not covered by the second ceramic substrate 51. 【0046】 Each of the multiple second via conductors 52 is used as an external connection terminal for connecting the high-frequency module 100 to an external board. The second via conductor 52 used as an external connection terminal in the second via component 5 is used as, for example, a ground terminal, a power terminal, or a dummy terminal. 【0047】 The high-frequency module 100 has multiple (four in the example in Figure 1) second via components 5 and multiple (five) second via conductors 52. Therefore, the high-frequency module 100 can use the five second via conductors 52 as five external connection terminals. Each of the five second via conductors 52 is connected to the second main surface 12 of the mounting substrate 1 by a joint. More specifically, each of the five second via conductors 52 is connected to a corresponding third pad electrode 18 of a plurality of third pad electrodes 18 on the mounting substrate 1 via a joint 19. The joint 19 is solder, but is not limited to solder and may include a plurality of conductive particles and a binder. In other words, each of the five second via conductors 52 may be bonded to the third pad electrode 18 using a conductive adhesive (e.g., conductive paste). 【0048】 The second via component 5 is positioned on the second main surface 12 of the mounting substrate 1 such that the thickness direction D21 of the second ceramic substrate 51 is parallel to the thickness direction D1 of the mounting substrate 1. The phrase "the thickness direction D21 of the second ceramic substrate 51 and the thickness direction D1 of the mounting substrate 1 are parallel" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the thickness direction D21 of the second ceramic substrate 51 and the thickness direction D1 of the mounting substrate 1 is 10 degrees or less. 【0049】 In a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple second via components 5 is square-shaped. That is, in a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple second ceramic substrates 51 is square-shaped. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the multiple second via components 5 is smaller than the mounting substrate 1. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the multiple second via conductors 52 is L-shaped. Note that in a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple second via components 5 is not limited to a square shape, but may also be rectangular. That is, in a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the multiple second ceramic substrates 51 is not limited to a square shape, but may also be rectangular. 【0050】 The second ceramic substrate 51 in each of the multiple second via components 5 is, for example, LTCC. The material of the first ceramic substrate 41 in each of the multiple second via components 5 includes, for example, alumina and glass. The glass includes, for example, amorphous glass of the CaO-Al2O3-SiO2-B2O3 system. The material of the second via conductor 52 in each of the multiple second via components 5 includes, for example, copper. 【0051】 The second via component 5 can be manufactured, for example, by the same manufacturing method as that used for LTCC substrates. In the manufacturing method for the second via component 5, first, multiple ceramic green sheets are prepared, which will serve as the basis for a large number of second ceramic substrates 51. Then, via holes are formed in each ceramic green sheet by laser processing or the like, conductive paste is charged into the via holes, and these multiple ceramic green sheets are stacked, pressed, and fired to obtain a multi-cavity substrate having a large number of second via components 5. After that, the multi-cavity substrate is cut to obtain individual second via components 5. Each of the multiple ceramic green sheets contains alumina, glass, and an organic binder. The glass includes, for example, amorphous glass of the CaO-Al2O3-SiO2-B2O3 system. If the material of the second via conductor 52 contains Cu, the conductive paste is, for example, Cu paste. If the material of the second via conductor 52 contains Ag, the conductive paste is, for example, Ag paste. The firing temperature is, for example, 800°C to 1000°C. 【0052】 The material of the second ceramic substrate 51 is the same as the material of the first ceramic substrate 41, but it may be different from the material of the first ceramic substrate 41. In each of the multiple second via components 5, the second ceramic substrate 51 is not limited to LTCC, but may be, for example, an alumina ceramic. In this case, the second via component 5 can be manufactured, for example, by the same manufacturing method as the HTCC substrate. Also in this case, the material of the second via conductor 52 in each of the multiple second via components 5 includes, for example, tungsten or molybdenum. Furthermore, the second ceramic substrate 51 may be a ceramic containing alumina and an amorphous glass of the CaO-Al2O3-SiO2-B2O3 system, or a low-temperature fired ceramic with alumina as the main component, other than an alumina ceramic. 【0053】 In this embodiment, when viewed from the thickness direction D1 of the mounting substrate 1, the length of the second via conductor 52 is preferably at least twice the diameter R1 (see Figure 1) of the first via conductor 42, and at least the maximum distance L1 (see Figure 1) between the outer edges of two adjacent first via conductors 42. The length of the second via conductor 52 when viewed from the thickness direction D1 of the mounting substrate 1 is the length along the L-shape. In this embodiment, when viewed from the thickness direction D1 of the mounting substrate 1, the second via conductor 52 is arranged along two sides of the second ceramic substrate 51, and the length of the second via conductor 52 is the length in the direction along the two sides of the second ceramic substrate 51. 【0054】 (1.7) First resin layer As shown in Figures 2 and 3, the first resin layer 6 is arranged on the first main surface 11 of the mounting substrate 1. The first resin layer 6 covers a plurality of first electronic components 2. The first resin layer 6 has electrical insulating properties. The first resin layer 6 contains a resin (for example, epoxy resin). The first resin layer 6 may also contain fillers in addition to the resin. 【0055】 (1.8) Second resin layer As shown in Figure 1, the second resin layer 7 is arranged on the second main surface 12 of the mounting substrate 1 and covers the outer peripheral surfaces 413 of each of the plurality of first via components 4 and the outer peripheral surfaces 513 of each of the plurality of second via components 5. The outer peripheral surface 43 of the first via component 4 is the outer peripheral surface 413 of the first ceramic substrate 41, including the four sides of the first ceramic substrate 41 but not the first main surface 411 and the second main surface 412 of the first ceramic substrate 41. The outer peripheral surface 53 of the second via component 5 is the outer peripheral surface 513 of the second ceramic substrate 51, including the four sides of the second ceramic substrate 51 but not the first main surface 511 and the second main surface 512 of the second ceramic substrate 51. In this embodiment, the second resin layer 7 covers all of the outer peripheral surfaces 43 of each of the plurality of first via components 4, but it is not limited to covering all of the outer peripheral surfaces 43; it is sufficient if it covers at least a part of the outer peripheral surfaces 43. Furthermore, the second resin layer 7 covers the entire outer surface 53 of each of the multiple second via components 5, but it is not limited to covering the entire outer surface 53; it is sufficient if it covers at least a part of the outer surface 53. Also, the second resin layer 7 covers the outer surface 33 of the second electronic component 3. The second resin layer 7 covers the main surface 32 of the second electronic component 3 on the side opposite to the mounting substrate 1, but it may also be shaped in a way that does not cover this main surface 32. The second resin layer 7 has electrical insulating properties. The second resin layer 7 contains resin (for example, epoxy resin). The second resin layer 7 may also contain fillers in addition to the resin. The material of the second resin layer 7 is the same as the material of the first resin layer 6, but it may be a different material. 【0056】 (1.9) Outer shield layer The external shielding layer 8 covers the first resin layer 6, the outer periphery surface 13 of the mounting substrate 1, and the outer periphery surface 73 of the second resin layer 7. More specifically, the external shielding layer 8 covers the main surface 61 of the first resin layer 6 on the side opposite to the mounting substrate 1, the outer periphery surface 63 of the first resin layer 6, the outer periphery surface 13 of the mounting substrate 1, and the outer periphery surface 73 of the second resin layer 7. In the high-frequency module 100, the external shielding layer 8 does not cover the main surface 71 of the second resin layer 7 on the side opposite to the mounting substrate 1. 【0057】 The external shielding layer 8 is conductive. In the high-frequency module 100, the external shielding layer 8 is provided, for example, for electromagnetic shielding of the inside and outside of the high-frequency module 100. The external shielding layer 8 has a multilayer structure in which multiple metal layers are stacked, but it is not limited to a multilayer structure and may consist of a single metal layer. The metal layer contains one or more types of metal. When the external shielding layer 8 has a multilayer structure in which multiple metal layers are stacked, for example, it includes a first stainless steel layer, a Cu layer on the first stainless steel layer, and a second stainless steel layer on the Cu layer. The materials of the first stainless steel layer and the second stainless steel layer are alloys containing Fe, Ni, and Cr. Also, when the external shielding layer 8 consists of a single metal layer, for example, it is a Cu layer. 【0058】 The external shielding layer 8 is connected to the ground terminal via the ground layer and ground via conductor of the mounting substrate 1. 【0059】 (3) Layout In the following explanation, for the sake of clarity, we will define one direction perpendicular to the thickness direction D1 of the mounting substrate 1 (hereinafter also referred to as the first direction D1) as the second direction D2, and the direction perpendicular to both the first direction D1 and the second direction D2 as the third direction. In the example in Figure 1, in a plan view from the thickness direction D1 of the mounting substrate 1, the second main surface 12 of the mounting substrate 1 is rectangular, and the direction parallel to the two short sides of the rectangular second main surface 12 is defined as the second direction D2, and the direction parallel to the two long sides of the rectangular second main surface 12 is defined as the third direction D3. 【0060】 In this embodiment, the high-frequency module 100, when viewed from the thickness direction D1 of the mounting substrate 1, has multiple via components, including multiple (four in the example of Figure 1) first via components 4 and multiple (four in the example of Figure 1) second via components 5, arranged so as to surround the second electronic component 3. Because the high-frequency module 100 of this embodiment has multiple via components, it has the advantage of being less affected by the flatness of the first main surface 11 of the mounting substrate 1 compared to the case where a single frame-shaped via component surrounding the second electronic component 3 has multiple via conductors. 【0061】 In the high-frequency module 100, four second via components 5 are arranged one at each of the four corners of the second main surface 12 of the mounting substrate 1. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the four second via components 5 is positioned such that the second via conductor 52 lies along two adjacent sides of the four sides of the rectangular mounting substrate 1 (one of the two short sides and one of the two long sides). 【0062】 Furthermore, in the high-frequency module 100, the four first via components 4 include two first via components 4a and two first via components 4b. 【0063】 Each of the two first via components 4a is positioned between two second via components 5 that are aligned in the second direction D2, and is spaced apart from the two second via components 5. Each of the two first via components 4a has two first via conductors 42, and is positioned on the second main surface 12 of the mounting substrate 1 such that the two first via conductors 42 are aligned in the second direction D2. 【0064】 Each of the two first via components 4b has three first via conductors 42, and is arranged on the second main surface 12 of the mounting substrate 1 such that the three first via conductors 42 are aligned in the third direction D3. 【0065】 Furthermore, in the high-frequency module 100, each of the two first via components 4b is positioned between two second via components 5 that are aligned in the second direction D2, and spaced apart from the two second via components 5. Each of the two first via components 4a has two first via conductors 42, and is positioned on the second main surface 12 of the mounting substrate 1 such that the two first via conductors 42 are aligned in the second direction D2. 【0066】 (4) Communication equipment The communication device 300 includes, for example, a high-frequency module 100 and a signal processing circuit 301 to which the high-frequency module 100 is connected, as shown in Figure 7. The communication device 300 further includes an antenna 310. The communication device 300 further includes a motherboard (not shown) on which the high-frequency module 100 is mounted. The motherboard is, for example, a printed circuit board. The motherboard has a ground electrode to which a ground potential is applied. The high-frequency module 100 is configured, for example, to amplify the received signal input from the antenna 310 and output it to the signal processing circuit 301. The high-frequency module 100 is controlled, for example, by the signal processing circuit 301 of the communication device 300. 【0067】 The signal processing circuit 301 includes an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals. For example, the RF signal processing circuit 302 performs signal processing such as upconversion on the high-frequency signal (transmitted signal) output from the baseband signal processing circuit 303 and outputs the processed high-frequency signal. The RF signal processing circuit 302 also performs signal processing such as downconversion on the high-frequency signal (received signal) output from the high-frequency module 100 and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates I-phase signals and Q-phase signals from the baseband signal. The baseband signal is, for example, an audio signal or image signal input from an external source. The baseband signal processing circuit 303 performs IQ modulation processing by combining the I-phase signal and the Q-phase signal, and outputs a transmission signal. In this process, the transmission signal is generated as a modulated signal (IQ signal) in which a carrier signal of a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used, for example, as an image signal for image display, or as an audio signal for communication between the user of the communication device 300. 【0068】 (5) Effects The high-frequency module 100 according to Embodiment 1 comprises a mounting substrate 1 and a first via component 4. The mounting substrate 1 has a first main surface 11 and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 is covered by the first ceramic substrate 41. 【0069】 The above configuration makes it possible to miniaturize the device. More specifically, with the above configuration, compared to the case where the external connection terminals are formed by plating growth, the first via conductor 42 used as the external connection terminal can be made thinner than the post electrode formed by conventional plating growth, making it possible to miniaturize the mounting substrate 1. Therefore, with the above configuration, it is possible to miniaturize the high-frequency module 100. 【0070】 Furthermore, the high-frequency module 100 according to Embodiment 1 includes a plurality of first via components 4. 【0071】 According to the above configuration, each of the first via conductors 42 of the multiple first via components 4 can be made thinner than the post electrodes formed by conventional plating growth. 【0072】 Furthermore, in the high-frequency module 100 according to Embodiment 1, the first via component 4 has a plurality of first via conductors 42, including a first via conductor 42. 【0073】 According to the above configuration, when the first via component 4 contains only one first via conductor 42, the distance between multiple first via components 4 can be made shorter compared to when multiple first via components 4 are arranged side by side, making further miniaturization possible. 【0074】 Furthermore, in the high-frequency module 100 according to Embodiment 1, each of the multiple first via conductors 42 is cylindrical. 【0075】 According to the above configuration, it becomes possible to miniaturize the multiple first via conductors 42. 【0076】 Furthermore, the high-frequency module 100 further comprises a second via component 5. The second via component 5 is located on the second main surface 12 of the mounting substrate 1. The second via component 5 has a second ceramic substrate 51 and a second via conductor 52. The second via conductor 52 is connected to the mounting substrate 1 and its side surface 523 is covered by the second ceramic substrate 51. In a plan view from the thickness direction D1 of the mounting substrate 1, the length of the second via conductor 52 is at least twice the diameter R1 of the first via conductor 42. 【0077】 The above configuration makes it possible to improve impact resistance and heat cycle resistance. Heat cycle resistance can be evaluated by performing a temperature cycle test based on the IPC-9701 standard or the JESD22-A104 standard with the first via conductor 42 and the second via conductor 52 of the high-frequency module 100 connected to an evaluation board via solder joints, or with the first via conductor 42 and the second via conductor 52 of the high-frequency module 100 connected to an external board via solder joints. 【0078】 Furthermore, in the high-frequency module 100 according to Embodiment 1, the second via conductor 52 is L-shaped when viewed from a plan view from the thickness direction D1 of the mounting substrate 1. 【0079】 The above configuration makes it possible to improve the bonding strength between the second via conductor 52 and the external substrate. Furthermore, the above configuration makes it possible to further improve impact resistance and heat cycle resistance. 【0080】 Furthermore, in the high-frequency module 100 according to Embodiment 1, in a plan view from the thickness direction D1 of the mounting substrate 1, the width H52 of the second via conductor 52 is 1 or more times the diameter R1 of the first via conductor 42. 【0081】 With the above configuration, it is possible to further improve impact resistance and heat cycle resistance compared to the case where the width H52 of the second via conductor 52 is smaller than the diameter R1 of the first via conductor 42. 【0082】 Furthermore, the high-frequency module 100 according to Embodiment 1 includes a plurality of second via components 5. 【0083】 According to this embodiment, impact resistance and heat cycle resistance can be further improved compared to the case where only one second via component 5 is provided. 【0084】 Furthermore, in the high-frequency module 100 according to Embodiment 1, the mounting substrate 1 has a rectangular shape when viewed from the thickness direction D1. The plurality of second via components 5 include four second via components 5 arranged at the four corners of the second main surface 12 of the mounting substrate 1. 【0085】 The above configuration makes it possible to further improve impact resistance and heat cycle resistance. 【0086】 Furthermore, in the high-frequency module 100 according to Embodiment 1, at least one of the plurality of first via components 4 has a signal terminal. At least one of the plurality of first via components 4 has a first ground terminal. At least one of the plurality of second via components 5 has a second ground terminal. 【0087】 The above configuration makes it possible to increase the number of ground terminals while further improving shock resistance and heat cycle resistance. 【0088】 Furthermore, the high-frequency module 100 according to Embodiment 1 further comprises a first electronic component 2 and a second electronic component 3. The first electronic component 2 is arranged on the first main surface 11 of the mounting substrate 1. The second electronic component 3 is arranged on the second main surface 12 of the mounting substrate 1. 【0089】 The above configuration makes it possible to miniaturize the high-frequency module 100. 【0090】 Furthermore, the high-frequency module 100 according to Embodiment 1 further comprises a first resin layer 6 and a second resin layer 7. The first resin layer 6 is located on the first main surface 11 of the mounting substrate 1 and covers the first electronic component 2. The second resin layer 7 is located on the second main surface 12 of the mounting substrate 1. The second resin layer 7 covers the outer peripheral surface 33 of the second electronic component 3, the outer peripheral surface 43 of each of the plurality of first via components 4, and the outer peripheral surface 53 of each of the plurality of second via components 5. 【0091】 The above configuration makes it possible to improve moisture resistance and impact resistance. 【0092】 Furthermore, in the high-frequency module 100 according to Embodiment 1, in each of the plurality of first via components 4, the first ceramic substrate 41 is a low-temperature fired ceramic, and the material of the first via conductor 42 contains copper. In each of the plurality of second via components 5, the second ceramic substrate 51 is a low-temperature fired ceramic, and the material of the second via conductor 52 contains copper. 【0093】 With the above configuration, since the first ceramic substrate 41 is a low-temperature fired ceramic and the material of the first via conductor 42 contains copper, it is possible to reduce the resistance of the first via conductor 42 compared to the case where the material of the first via conductor 42 contains tungsten or molybdenum. Furthermore, with the above configuration, since the second ceramic substrate 51 is a low-temperature fired ceramic and the material of the second via conductor 52 contains copper, it is possible to reduce the resistance compared to the case where the material of the second via conductor 52 contains tungsten or molybdenum. 【0094】 Furthermore, the communication device 300 according to Embodiment 1 includes a high-frequency module 100 and a signal processing circuit 301. The signal processing circuit 301 is connected to the high-frequency module 100. 【0095】 The above configuration makes it possible to miniaturize the device. 【0096】 (Embodiment 2) The high-frequency module 100A according to Embodiment 2 will be described with reference to Figures 8 to 10. Regarding the high-frequency module 100A according to Embodiment 2, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that in Figure 8, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are the same as those in Figures 2 and 3, are not shown. 【0097】 (1) Composition The high-frequency module 100A according to Embodiment 2 differs from the high-frequency module 100 according to Embodiment 1 in that the shape of the second via conductor 52 (see Figures 8 and 10) in each of the plurality of second via components 5 differs from that of Embodiment 1, and that it includes two first via components 4c (see Figures 8 and 9) instead of two first via components 4a among the plurality of first via components 4 described in Embodiment 1. 【0098】 In this embodiment, in a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1, each of the multiple (four in the example of Figure 8) second via components 5 is rectangular, and the second via conductor 52 is a smaller rectangle than the second via component 5. In a plan view from the thickness direction D1 of the mounting substrate 1, in each of the multiple second via components 5, the longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 are parallel. "The longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 are parallel" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 is 10 degrees or less. 【0099】 In a plan view from the thickness direction D1 of the mounting substrate 1, the mounting substrate 1 is rectangular in shape (rectangular in the example of Figure 8). In a plan view from the thickness direction D1 of the mounting substrate 1, the four second via components 5 are arranged one at each of the four corners of the second main surface 12 of the mounting substrate 1. The four second via components 5 are arranged such that the third direction D3, which is parallel to the long side of the mounting substrate 1, is parallel to the longitudinal direction of the second via conductor 52. Therefore, in this embodiment, of the four second via conductors 52, the two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and the two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. The phrase "the two second via conductors 52 have longitudinal directions parallel to each other" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the longitudinal direction of one of the two second via conductors 52 and the longitudinal direction of the other second via conductor 52 is 10 degrees or less. 【0100】 Each of the two first via components 4c is positioned between two second via components 5 that are aligned in the second direction D2, and is spaced apart from the two second via components 5. Each of the two first via components 4c has four first via conductors 42, and is positioned on the second main surface 12 of the mounting substrate 1 such that the four first via conductors 42 are aligned in the second direction D2. 【0101】 Each of the two first via components 4b has three first via conductors 42, similar to Embodiment 1, and is positioned on the second main surface 12 of the mounting substrate 1 such that the three first via conductors 42 are aligned in the third direction D3. 【0102】 (2) Effects The high-frequency module 100A according to Embodiment 2 comprises a mounting substrate 1 and a first via component 4, similar to the high-frequency module 100 according to Embodiment 1. The mounting substrate 1 has a first main surface 11 (see Figure 2) and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 (see Figure 2) is covered by the first ceramic substrate 41. 【0103】 The above configuration makes it possible to miniaturize the device. 【0104】 Furthermore, in the high-frequency module 100A according to Embodiment 2, the second via conductor 52 is rectangular in shape when viewed from a plan view from the thickness direction D1 of the mounting substrate 1. 【0105】 With the above configuration, it is possible to miniaturize the second via component 5 compared to the case where the second via conductor 52 is L-shaped, as in the second via component 5 of Embodiment 1. 【0106】 Furthermore, the high-frequency module 100A according to Embodiment 2 includes a plurality of second via components 5. In a plan view from the thickness direction D1 of the mounting substrate 1, the mounting substrate 1 is rectangular in shape. The plurality of second via components 5 include four second via components 5 arranged at the four corners of the second main surface 12 of the mounting substrate 1. In a plan view from the thickness direction D1 of the mounting substrate 1, the second via conductor 52 of each of the four second via components 5 is rectangular in shape. In a plan view from the thickness direction D1 of the mounting substrate 1, of the four second via conductors 52, two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. 【0107】 The above configuration makes it possible to further improve impact resistance and heat cycle resistance. 【0108】 (Embodiment 3) The high-frequency module 100B according to Embodiment 3 will be described with reference to Figure 11. Regarding the high-frequency module 100B according to Embodiment 3, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are similar to those in Figures 2 and 3, are not shown in Figure 11. 【0109】 (1) Composition The high-frequency module 100B according to Embodiment 3 differs from the high-frequency module 100 according to Embodiment 1 in that the shape of the second via conductor 52 in each of the plurality of second via components 5 differs from that of Embodiment 1, and that it has two first via components 4d instead of two first via components 4b of the plurality of first via components 4 described in Embodiment 1. 【0110】 In this embodiment, in a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1, each of the multiple (four in the example of Figure 11) second via components 5 is rectangular, and the second via conductor 52 is a smaller rectangle than the second via component 5. In a plan view from the thickness direction D1 of the mounting substrate 1, in each of the multiple second via components 5, the longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 are parallel. "The longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 are parallel" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the longitudinal direction of the second via component 5 and the longitudinal direction of the second via conductor 52 is 10 degrees or less. 【0111】 In a plan view from the thickness direction D1 of the mounting substrate 1, the mounting substrate 1 is rectangular (in the example of Figure 11, it is rectangular). In a plan view from the thickness direction D1 of the mounting substrate 1, the four second via components 5 are arranged one at each of the four corners of the second main surface 12 of the mounting substrate 1. The four second via components 5 are arranged such that the second direction D2, which is parallel to the short side of the mounting substrate 1, is parallel to the longitudinal direction of the second via conductor 52. Therefore, in this embodiment, of the four second via conductors 52, the two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and the two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. The phrase "the two second via conductors 52 have longitudinal directions parallel to each other" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the longitudinal direction of one of the two second via conductors 52 and the longitudinal direction of the other second via conductor 52 is 10 degrees or less. 【0112】 Each of the two first via components 4d is positioned spaced apart from the two second via components 5, which are aligned in the second direction D2. Each of the two first via components 4d has four first via conductors 42. In a plan view from the thickness direction D1 of the mounting substrate 1, the four first via conductors 42 in each of the two first via components 4d are aligned in the longitudinal direction of the first ceramic substrate 41. Each of the two first via components 4d is positioned on the second main surface 12 of the mounting substrate 1 such that the four first via conductors 42 are aligned in the third direction D3. The two first via components 4d are positioned spaced apart in the second direction D2. 【0113】 Each of the two first via components 4d has five first via conductors 42, and the five first via conductors 42 are aligned in the longitudinal direction of the first ceramic substrate 41. Each of the two first via components 4d has five first via conductors 42, and is positioned on the second main surface 12 of the mounting substrate 1 such that the five first via conductors 42 are aligned in the third direction D3. 【0114】 (2) Effects The high-frequency module 100B according to Embodiment 3 comprises a mounting substrate 1 and a first via component 4, similar to the high-frequency module 100 according to Embodiment 1. The mounting substrate 1 has a first main surface 11 (see Figure 2) and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 (see Figure 2) is covered by the first ceramic substrate 41. 【0115】 The above configuration makes it possible to miniaturize the device. 【0116】 Furthermore, in the high-frequency module 100B according to Embodiment 3, the second via conductor 52 is rectangular in shape when viewed from a plan view from the thickness direction D1 of the mounting substrate 1. 【0117】 With the above configuration, it is possible to miniaturize the second via component 5 compared to the case where the second via conductor 52 is L-shaped, as in the second via component 5 of Embodiment 1. 【0118】 Furthermore, the high-frequency module 100B according to Embodiment 3 includes a plurality of second via components 5. In a plan view from the thickness direction D1 of the mounting substrate 1, the mounting substrate 1 is rectangular in shape. The plurality of second via components 5 include four second via components 5 arranged at the four corners of the second main surface 12 of the mounting substrate 1. In a plan view from the thickness direction D1 of the mounting substrate 1, the second via conductor 52 of each of the four second via components 5 is rectangular in shape. In a plan view from the thickness direction D1 of the mounting substrate 1, of the four second via conductors 52, two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. 【0119】 The above configuration makes it possible to further improve impact resistance and heat cycle resistance. 【0120】 (Embodiment 4) The high-frequency module 100C according to Embodiment 4 will be described with reference to Figure 12. Regarding the high-frequency module 100C according to Embodiment 4, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are similar to those in Figures 2 and 3, are not shown in Figure 12. 【0121】 (1) Composition The high-frequency module 100C according to Embodiment 4 differs from the high-frequency module 100 according to Embodiment 1 in that the shape of the second via conductor 52 in each of the plurality of second via components 5 is different from that of Embodiment 1, and instead of two first via components 4b among the plurality of first via components 4 described in Embodiment 1, it comprises two first via components 4a, two first via components 4e, and two second via components 5. 【0122】 In the high-frequency module 100C of Embodiment 4, the plurality of first via components 4 include four first via components 4a and two first via components 4e, and the plurality of second via components 5 include six second via components 5. Each of the two first via components 4e has a first ceramic substrate 41 and one first via conductor 42. In a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1, the first ceramic substrate 41 of the first via component 4e is square in shape, but may also be rectangular. 【0123】 In a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1, the mounting substrate 1 is rectangular in shape (rectangular in the example of Figure 12). In this embodiment, in a plan view from the thickness direction D1 of the mounting substrate 1, four of the six second via components 5 are arranged one at each of the four corners of the second main surface 12 of the mounting substrate 1, and each of the remaining two second via components 5 is arranged along the third direction such that the longitudinal direction of the second via component 5 is parallel to the third direction D3. 【0124】 The four second via components 5 described above are arranged such that the longitudinal direction of the second via conductor 52 is parallel to the longitudinal direction of the second via conductor 52 and the second direction D2, which is parallel to the short side of the mounting substrate 1. Therefore, in this embodiment, of the four second via conductors 52 described above, the two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and the two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. The phrase "the longitudinal directions of the two second via conductors 52 are parallel to each other" is not limited to cases where they are strictly parallel, but also includes cases where the acute angle between the longitudinal direction of one second via conductor 52 and the longitudinal direction of the remaining second via conductor 52 is 10 degrees or less. 【0125】 (2) Effects The high-frequency module 100C according to Embodiment 4 comprises a mounting substrate 1 and a first via component 4, similar to the high-frequency module 100 according to Embodiment 1. The mounting substrate 1 has a first main surface 11 (see Figure 2) and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 (see Figure 2) is covered by the first ceramic substrate 41. 【0126】 The above configuration makes it possible to miniaturize the device. 【0127】 Furthermore, in the high-frequency module 100C according to Embodiment 4, the second via conductor 52 is rectangular in shape when viewed from a plan view from the thickness direction D1 of the mounting substrate 1. 【0128】 With the above configuration, it is possible to miniaturize the second via component 5 compared to the case where the second via conductor 52 is L-shaped, as in the second via component 5 of Embodiment 1. 【0129】 Furthermore, the high-frequency module 100C according to Embodiment 4 includes a plurality of second via components 5. In a plan view from the thickness direction D1 of the mounting substrate 1, the mounting substrate 1 is rectangular in shape. The plurality of second via components 5 include four second via components 5 arranged at the four corners of the second main surface 12 of the mounting substrate 1. In a plan view from the thickness direction D1 of the mounting substrate 1, the second via conductor 52 of each of the four second via components 5 is rectangular in shape. In a plan view from the thickness direction D1 of the mounting substrate 1, of the four second via conductors 52, two second via conductors 52 located on the first diagonal A1 of the mounting substrate 1 have their longitudinal directions parallel to each other, and two second via conductors 52 located on the second diagonal A2 of the mounting substrate 1 have their longitudinal directions parallel to each other. 【0130】 The above configuration makes it possible to further improve impact resistance and heat cycle resistance. 【0131】 (Embodiment 5) The high-frequency module 100D according to Embodiment 5 will be described with reference to Figure 13. Regarding the high-frequency module 100D according to Embodiment 5, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are similar to those in Figures 2 and 3, are not shown in Figure 13. 【0132】 (1) Composition The high-frequency module 100D according to Embodiment 5 differs from the high-frequency module 100 according to Embodiment 1 in that it has six first via components 4a instead of the two second via components 5 and one first via component 4a of Embodiment 1. In the example in Figure 13, the plurality of first via components 4 include seven first via components 4a and two first via components 4b. Also, in the example in Figure 13, the plurality of second via components 5 include two second via components 5. 【0133】 In this embodiment, six first via components 4a are arranged such that twelve first via conductors 42 are arranged in two rows of six in the second direction D2. In this embodiment, the twelve first via conductors 42 are used as heat dissipation vias. 【0134】 In this embodiment, from the viewpoint of improving heat cycle resistance, it is preferable that the two second via components 5 are arranged on the side of the second main surface 12 of the mounting substrate 1 in the third direction D3 where the number of first via conductors 42 is smaller. 【0135】 (2) Effects The high-frequency module 100D according to Embodiment 5 comprises a mounting substrate 1 and a first via component 4, similar to the high-frequency module 100 according to Embodiment 1. The mounting substrate 1 has a first main surface 11 (see Figure 2) and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 (see Figure 2) is covered by the first ceramic substrate 41. 【0136】 The above configuration makes it possible to miniaturize the device. 【0137】 Furthermore, in the high-frequency module 100D according to Embodiment 5, the second via conductor 52 is rectangular in shape when viewed from a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1. 【0138】 With the above configuration, it is possible to miniaturize the second via component 5 compared to the case where the second via conductor 52 is L-shaped, as in the second via component 5 of Embodiment 1. 【0139】 (Embodiment 6) The high-frequency module 100E according to Embodiment 6 will be described with reference to Figure 14. Regarding the high-frequency module 100E according to Embodiment 6, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are similar to those in Figures 2 and 3, are not shown in Figure 14. 【0140】 (1) Composition The high-frequency module 100E according to Embodiment 6 differs from the high-frequency module 100 according to Embodiment 1 in that it includes two second via components 5b instead of two of the four second via components 5a of Embodiment 1. In the second via component 5a, the second ceramic substrate 51 is square-shaped and the second via conductor 52 is L-shaped in a plan view, while in the second via component 5b, the second ceramic substrate 51 is rectangular and the second via conductor 52 is rectangular in a plan view. In the example in Figure 14, the plurality of first via components 4 include seven first via components 4a and two first via components 4b. 【0141】 In this embodiment, four first via components 4a and two first via components 4b are arranged such that twelve first via conductors 42 are arranged in two rows of six in the second direction D2. In this embodiment, the twelve first via conductors 42 are used as heat dissipation vias. 【0142】 In this embodiment, from the viewpoint of improving heat cycle resistance, it is preferable that the two second via components 5 are arranged on the side of the second main surface 12 of the mounting substrate 1 in the third direction D3 where the number of first via conductors 42 is smaller. 【0143】 In this embodiment, in a plan view from the thickness direction D1 of the mounting substrate 1, two of the four second via components 5a are arranged one at each of the four corners of the second main surface 12 of the mounting substrate 1, and each of the remaining two second via components 5b is arranged along the third direction D3 such that the longitudinal direction of the second via component 5b is parallel to the third direction D3. In this embodiment, it is possible to improve impact resistance compared to Embodiment 5. 【0144】 (2) Effects The high-frequency module 100E according to Embodiment 6 comprises a mounting substrate 1 and a first via component 4, similar to the high-frequency module 100 according to Embodiment 1. The mounting substrate 1 has a first main surface 11 and a second main surface 12 that face each other. The first via component 4 is arranged on the second main surface 12 of the mounting substrate 1. The first via component 4 comprises a first ceramic substrate 41 and a first via conductor 42. The first via conductor 42 is connected to the mounting substrate 1 and its side surface 423 (see Figure 2) is covered by the first ceramic substrate 41. 【0145】 The above configuration makes it possible to miniaturize the device. 【0146】 Furthermore, in the high-frequency module 100E according to Embodiment 6, the second via conductor 52 is rectangular in shape when viewed from a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1. 【0147】 (Embodiment 7) The high-frequency module 100F according to Embodiment 7 will be described with reference to Figure 15. Regarding the high-frequency module 100F according to Embodiment 7, components similar to those in the high-frequency module 100A according to Embodiment 2 (see Figure 8) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, which are similar to those in Figures 2 and 3, are not shown in Figure 15. 【0148】 (1) Composition The high-frequency module 100F according to Embodiment 7 differs from the high-frequency module 100A according to Embodiment 2 in that it includes two first via components 4f instead of two second via components 5 and two first via components 4c of the four second via components 5 of Embodiment 2. 【0149】 In the example in Figure 15, the multiple first via components 4 include two first via components 4b, one first via component 4c, and two first via components 4f. 【0150】 In a plan view from the thickness direction D1 (see Figure 2) of the mounting substrate 1, the first ceramic substrate 41 of each of the two first via components 4f is rectangular. Each of the two first via components 4f has six first via conductors 42. The six first via conductors 42 are arranged at equal intervals along the longitudinal direction of the first ceramic substrate 41. 【0151】 In this embodiment, two first via components 4f are arranged such that 12 first via conductors 42 are arranged in two rows of six in the second direction D2. In this embodiment, the 12 first via conductors 42 are used as heat dissipation vias. 【0152】 (2) Effects The high-frequency module 100F according to Embodiment 7 provides the same effects as the high-frequency module 100A according to Embodiment 2. 【0153】 (Embodiment 8) The high-frequency module 100G according to Embodiment 8 will be described with reference to Figure 16. Regarding the high-frequency module 100G according to Embodiment 8, components similar to those in the high-frequency module 100 according to Embodiment 1 (see Figures 1 to 7) are denoted by the same reference numerals and their descriptions are omitted. Note that, as with Figure 1, the second resist layer 15, the second resin layer 7, and the outer shield layer 8, as in Figures 2 and 3, are not shown in Figure 16. 【0154】 (1) Composition The high-frequency module 100G according to Embodiment 8 differs from the high-frequency module 100A according to Embodiment 2 in that it has one more first via component 4c than the high-frequency module 100A according to Embodiment 2. 【0155】 In the example shown in Figure 16, the arrangement of the first via component 4b and the second via component 5, which are aligned in the third direction D3 in the high-frequency module 100A of Embodiment 2, is reversed. 【0156】 In this embodiment, two first via components 4b and two first via components 4c are arranged such that twelve first via conductors 42 are arranged in two rows of six in the second direction D2. In this embodiment, twelve first via conductors 42 are used as heat dissipation vias. 【0157】 (2) Effects The high-frequency module 100G according to Embodiment 8 provides the same effects as the high-frequency module 100A according to Embodiment 2. 【0158】 The embodiments described above (1 to 8) are merely one of many embodiments of the present invention. The embodiments described above (1 to 8) can be modified in various ways depending on the design, etc., as long as the objectives of the present invention are achieved, and may be combined as appropriate. 【0159】 For example, the communication device 300 of Embodiment 1 may include a plurality of antennas, including an antenna 310 to which the high-frequency module 100 is connected. 【0160】 Furthermore, in the communication device 300 of Embodiment 1, one of the high-frequency modules 100A to 100G may be provided instead of the high-frequency module 100. 【0161】 Furthermore, the first via conductors 42 of the first via components 4, 4a, 4b, 4c, 4d, 4e, and 4f are not limited to being cylindrical in shape, but may also be, for example, prismatic in shape. 【0162】 Furthermore, the high-frequency modules 100, 100A, 100B, and 100C are double-sided mounting modules in which a plurality of first electronic components 2 are arranged on the first main surface 11 of the mounting substrate 1, and a second electronic component 3, a plurality of first via components 4, and a plurality of second via components 5 are arranged on the second main surface 12 of the mounting substrate 1. However, they may also be single-sided mounting modules in which a plurality of first electronic components 2 and a second electronic component 3 are arranged on the first main surface 11 of the mounting substrate 1, and a plurality of first via components 4 and a plurality of second via components 5 are arranged on the second main surface 12 of the mounting substrate 1. [Explanation of Symbols] 【0163】 1. Implemented circuit board 11. First Main Surface 12 Second Main Surface 13 Outer surface 2. First Electronic Component 3. Second Electronic Component 32 Main surface 33 Outer surface 4, 4a, 4b, 4c, 4d, 4e, 4f First via component 41. First ceramic substrate 411 First Main Surface 412 Second Main Surface 413 Outer surface 42 First via conductor 423 Side view 43 Outer surface 5, 5a, 5b Second via component 51. Second ceramic substrate 511 First Main Surface 512 Second Main Surface 513 Outer surface 52 Second via conductor 523 Side view 53 Outer surface 6 First resin layer 61 Main surface 63 Outer surface 7 Second resin layer 71 Main surface 73 Outer surface 8. Outer shielding layer 9 Joint 10 Joint 14. First Resistance Layer 141 Aperture 15. Second Resistance Layer 151 Aperture 17. Second pad electrode 18. Third pad electrode 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G High-Frequency Modules 300 Communication devices 301 Signal Processing Circuit 302 RF signal processing circuit 303 Baseband signal processing circuit 310 Antenna A1 First diagonal A2 Second diagonal D1 Thickness direction (first direction) D2 2nd direction D3 Third direction D11 Thickness direction D21 Thickness direction

Claims

[Claim 1] A mounting substrate having a first main surface and a second main surface facing each other, The first via component is located on the second main surface of the mounting substrate, The first via component is, First ceramic substrate and The first via conductor is connected to the aforementioned mounting substrate and has its sides covered by the first ceramic substrate, High-frequency module. [Claim 2] The first via component comprises a plurality of such components. The high-frequency module according to claim 1. [Claim 3] The first via component has a plurality of first via conductors, including the first via conductor. The high-frequency module according to claim 2. [Claim 4] Each of the plurality of first via conductors is cylindrical. The high-frequency module according to claim 3. [Claim 5] The mounting substrate further comprises a second via component located on the second main surface, The second via component is, The second ceramic substrate and It has a second via conductor connected to the aforementioned mounting substrate and whose side surface is covered by the second ceramic substrate, In a plan view from the thickness direction of the mounting substrate, the length of the second via conductor is at least twice the diameter of the first via conductor. The high-frequency module according to claim 4. [Claim 6] In a plan view of the aforementioned mounting substrate from the thickness direction, the second via conductor is L-shaped. The high-frequency module according to claim 5. [Claim 7] In a plan view of the aforementioned mounting substrate from the thickness direction, the second via conductor is rectangular in shape. The high-frequency module according to claim 5. [Claim 8] In a plan view of the aforementioned mounting substrate from the thickness direction, the width of the second via conductor is at least one times the diameter of the first via conductor. A high-frequency module according to any one of claims 5 to 7. [Claim 9] The device comprises a plurality of the aforementioned second via components. A high-frequency module according to any one of claims 5 to 8. [Claim 10] In a plan view of the aforementioned mounting substrate from the thickness direction, the mounting substrate has a rectangular shape. The plurality of second via components includes four second via components located at the four corners of the second main surface of the mounting substrate. The high-frequency module according to claim 9. [Claim 11] The system comprises multiple of the aforementioned second via components, In a plan view of the aforementioned mounting substrate from the thickness direction, the mounting substrate has a rectangular shape. The plurality of second via components include four second via components located at the four corners of the second main surface of the mounting substrate. In a plan view of the aforementioned mounting substrate from the thickness direction, the second via conductor of each of the four second via components is rectangular in shape. In a plan view of the aforementioned mounting substrate from the thickness direction, of the four second via conductors, two second via conductors located on the first diagonal of the mounting substrate have their longitudinal directions parallel to each other, and two second via conductors located on the second diagonal of the mounting substrate have their longitudinal directions parallel to each other. The high-frequency module according to claim 5. [Claim 12] At least one of the plurality of first via components has a signal terminal, At least one of the plurality of first via components has a first ground terminal, At least one of the plurality of second via components has a second ground terminal. A high-frequency module according to any one of claims 9 to 11. [Claim 13] A first electronic component arranged on the first main surface of the aforementioned mounting substrate, The mounting substrate further comprises a second electronic component disposed on the second main surface of the aforementioned mounting substrate, A high-frequency module according to any one of claims 1 to 12. [Claim 14] A first electronic component arranged on the first main surface of the aforementioned mounting substrate, A second electronic component is disposed on the second main surface of the aforementioned mounting substrate, A first resin layer is disposed on the first main surface of the mounting substrate and covers the first electronic component, The mounting substrate further comprises a second resin layer disposed on the second main surface and covering the outer circumferential surface of the second electronic component, the outer circumferential surface of each of the plurality of first via components, and the outer circumferential surface of each of the plurality of second via components. The high-frequency module according to claim 12. [Claim 15] In each of the aforementioned plurality of first via components, The first ceramic substrate is a low-temperature fired ceramic, The material of the first via conductor contains copper, In each of the aforementioned plurality of second via components, The second ceramic substrate is a low-temperature fired ceramic, The material of the second via conductor contains copper. The high-frequency module according to claim 14. [Claim 16] A high-frequency module according to any one of claims 1 to 15, The system comprises a signal processing circuit connected to the aforementioned high-frequency module, Communication device.

Images