Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device and a method for manufacturing the same, which improve the completeness of the laminated structure of the variable resistance layer by directly depositing a variable resistance layer on the upper part of the first conductive line, and which allows for sufficient wet cleaning during the patterning of the second conductive line by forming a second conductive line on the upper part of the selector layer, thereby improving electrical short circuits between the second conductive lines. [Solution] The semiconductor device of this embodiment comprises a first conductive line including the upper portion of a carbon-based thin film, a variable resistor layer disposed on the first conductive line, a selector layer disposed on the variable resistor layer with a carbon-based thin film disposed on top of it, and a second conductive line disposed on the selector layer.

Claims

[Claim 1] A first conductive line including the upper portion of the carbon-based thin film, A variable resistor layer disposed on the first conductive line, A selector layer is disposed on the aforementioned variable resistor layer, with a carbon-based thin film disposed on top of it, A second conductive line disposed on the selector layer, A semiconductor device equipped with a semiconductor device. [Claim 2] The semiconductor device according to claim 1, further comprising a lower electrode layer disposed between the variable resistance layer and the first conductive line and electrically connected to the variable resistance layer. [Claim 3] The semiconductor device according to claim 2, wherein the lower electrode layer comprises titanium nitride. [Claim 4] The semiconductor device according to claim 1, further comprising an upper electrode layer disposed between the selector layer and the second conductive line, wherein the upper electrode layer includes a lower portion of a carbon-based thin film electrically connected to the selector layer. [Claim 5] The semiconductor device according to claim 4, wherein the upper electrode layer comprises titanium nitride. [Claim 6] The semiconductor device according to claim 1, further comprising a spacer disposed on the side wall of the variable resistor layer, wherein the spacer is a material selected from the group consisting of silicon nitride, tantalum nitride, tungsten, titanium nitride, aluminum oxide, hafnium oxide, and platinum. [Claim 7] The semiconductor device according to claim 1, further comprising an intermediate electrode layer having a flattened upper surface between the variable resistor layer and the selector layer. [Claim 8] The variable resistance layer further comprises an interlayer capping layer disposed on the side wall of the variable resistance layer, The semiconductor device according to claim 1, wherein the interlayer capping layer has a single-film structure or a multi-film structure comprising one or more insulating materials and polysilicon. [Claim 9] The variable resistor layer and the selector layer are further provided with a gap fill layer on their side walls, The semiconductor device according to claim 1, wherein the gap fill layer comprises one or more of silicon oxide, silicon nitride, silicon oxidnitride, and silicon oxidoxide carbonnitride. [Claim 10] The first conductive line extends in a first direction, The semiconductor device according to claim 1, wherein the second conductive line extends in a second direction intersecting the first direction. [Claim 11] The steps include forming a variable resistance layer on a first conductive line having an upper portion of a carbon-based thin film and a lower portion of a conductive material, The steps include: patterning the variable resistor layer to make it columnar, The steps include forming a selector layer on the patterned variable resistor layer, The steps include performing a first lithography step and a first etching step on the selector layer, The steps include providing a patterned selector layer by performing a second lithography step and a second etching step on the selector layer, The steps include forming a second conductive line on the patterned selector layer, A method for manufacturing a semiconductor device containing [a specific component]. [Claim 12] The method for manufacturing a semiconductor device according to claim 11, further comprising the step of forming an upper electrode layer on the selector layer after the formation of the selector layer, wherein the upper electrode layer includes the lower portion of a carbon-based thin film. [Claim 13] The method for manufacturing a semiconductor device according to claim 11, further comprising the step of depositing a material selected from the group consisting of silicon nitride, tantalum nitride, tungsten, titanium nitride, aluminum oxide, hafnium oxide, and platinum onto the sidewall of the patterned variable resistor layer to form a spacer. [Claim 14] The method for manufacturing a semiconductor device according to claim 13, wherein, during the first patterning and second patterning of the selector layer, the side portion of the spacer and the side portion of the selector layer self-align. [Claim 15] After the patterning step of the variable resistor layer, The steps include forming an intermediate electrode layer, The steps include: flattening the intermediate electrode layer, A method for manufacturing a semiconductor device according to claim 11, further comprising: [Claim 16] After the patterning step of the variable resistor layer, The step further includes forming an interlayer capping layer disposed on the side surface of the variable resistance layer, The method for manufacturing a semiconductor device according to claim 11, wherein the interlayer capping layer has a single-film structure or a multi-film structure comprising one or more insulating materials and polysilicon. [Claim 17] The process further includes the step of forming a gap fill layer that fills the space between the sidewalls of the aligned variable resistance layer and the sidewalls of the selector layer, The method for manufacturing a semiconductor device according to claim 11, wherein the gap fill layer comprises one or more of silicon oxide, silicon nitride, silicon oxidnitride, and silicon oxidoxide carbonnitride. [Claim 18] The method for manufacturing a semiconductor device according to claim 11, wherein the first etching step is performed on at least a portion of the carbon-based thin film of the first conductive line. [Claim 19] The method for manufacturing a semiconductor device according to claim 11, wherein the first etching step is performed on at least a portion of the conductive material of the first conductive line. [Claim 20] The method for manufacturing a semiconductor device according to claim 11, wherein the second etching step is performed on at least a portion of the carbon-based thin film of the first conductive line. [Claim 21] A method for manufacturing a semiconductor device according to claim 11, wherein the first conductive line is formed to extend in a first direction, and the second conductive line is formed to extend in a second direction intersecting the first direction.

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