Composition, method for processing a metal-containing film using the same, and method for manufacturing a semiconductor device using the same.

JP2026096954APending Publication Date: 2026-06-15SAMSUNG ELECTRONICS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2025-12-01
Publication Date
2026-06-15

AI Technical Summary

🎯Benefits of technology

【0023】 前記組成物は、気泡が生成することなく、優れたエッチング速度制御能及び優れた洗浄能を有し、多様な金属含有膜に対する各種処理工程、例えば、エッチング、洗浄工程などに効果的に使用できるので、前記組成物を用いて金属含有膜を処理することで高品質の半導体装置を作製することができる。

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026096954000001_ABST
    Figure 2026096954000001_ABST
Patent Text Reader

Abstract

The present invention provides a composition, a method for processing a metal-containing film using the same, and a method for manufacturing a semiconductor device using the same. [Solution] A composition comprising an oxidizing agent, an ammonium-containing compound, and an etching modifier, wherein the etching modifier comprises a compound represented by chemical formula 1; a method for processing a metal-containing film using the same; and a method for manufacturing a semiconductor device using the same. For a description of chemical formula 1, please refer to the one provided in this specification.
Need to check novelty before this filing date? Find Prior Art