Light-emitting diode element

Abstract

To provide a light-emitting diode element capable of improving light output. [Solution] A light-emitting diode element 1 comprising: a semiconductor substrate 10 having a first surface 10a and a second surface 10b opposite to the first surface; a semiconductor laminate 20 formed on the first surface of the semiconductor substrate; a first electrode 51 connected to a part of the semiconductor laminate on the semiconductor substrate side; and a second electrode 52 connected to a part of the semiconductor laminate opposite to the semiconductor substrate, wherein the semiconductor laminate includes an n-type semiconductor layer 20A, an active layer 25 having a p-type conductivity and laminated on the n-type semiconductor layer, and a p-type semiconductor layer 20B laminated on the active layer on the opposite side of the n-type semiconductor layer, wherein the active layer has a multiple quantum well structure composed of alternating layers of barrier layers containing AlInAs and well layers containing InAsSb, the lattice constant of the barrier layer is smaller than the lattice constant of the n-type semiconductor layer, and the lattice constant of the well layer is larger than the lattice constant of the n-type semiconductor layer.

Claims

1. A semiconductor substrate having a first surface and a second surface opposite to the first surface, A semiconductor laminate formed on the first surface of the semiconductor substrate, A first electrode connected to a part of the semiconductor substrate side in the semiconductor stacked portion, A second electrode connected to a part of the semiconductor stacked portion opposite to the semiconductor substrate, Equipped with, The aforementioned semiconductor stacked portion is n-type semiconductor layer, An active layer having a p-type conductivity and laminated on the n-type semiconductor layer, A p-type semiconductor layer is laminated on the active layer on the opposite side of the n-type semiconductor layer, Includes, The active layer has a multiple quantum well structure in which a barrier layer and a well layer containing InAsSb are alternately stacked. The degree of lattice mismatch between the average lattice constant of the barrier layer and the well layer and the lattice constant of the n-type semiconductor layer is 0.9% or less. Light-emitting diode element.

2. The active layer includes 10 or more pairs of the barrier layer and the well layer. The light-emitting diode element according to claim 1.

3. The p-type impurity concentration in the active layer is 1.0 × 10⁻⁶ １６ / cm ３ The above 1.9 x 10 １８ / cm ３ The following is: The light-emitting diode element according to claim 1 or 2.

4. The barrier layer includes AlInAs, A light-emitting diode element according to any one of claims 1 to 3.

5. The lattice constant of the barrier layer is smaller than that of the n-type semiconductor layer. A light-emitting diode element according to any one of claims 1 to 4.

6. The lattice constant of the well layer is greater than that of the n-type semiconductor layer. A light-emitting diode element according to any one of claims 1 to 4.

7. Displaced between the n-type semiconductor layer and the active layer is an n-type barrier layer containing Al InAs, Displaced between the active layer and the p-type semiconductor layer is a p-type barrier layer containing AlInAs, A light-emitting diode element according to any one of claims 1 to 6, comprising:

8. The aforementioned semiconductor stacked portion is A base having a third surface facing the opposite side from the semiconductor substrate, The base is provided so as to protrude from a part of the third surface, and has a top surface facing the opposite side of the base, and includes at least the mesa portion which contains the active layer, It has, The first electrode is formed on the third surface such that it surrounds the mesa portion when viewed from a direction intersecting the third surface. The second electrode is formed on the top surface so as to cover the central area of ​​the top surface, The second surface of the semiconductor substrate is a light-emitting surface. A light-emitting diode element according to any one of claims 1 to 7.

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