Silicon nitride sintered body

JP2026098193APending Publication Date: 2026-06-17TOKUYAMA CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
TOKUYAMA CORP
Filing Date
2024-12-05
Publication Date
2026-06-17

AI Technical Summary

Benefits of technology

【0012】 本発明の窒化ケイ素焼結体により、優れたTCT特性を備える電気絶縁基板を容易に形成できる。それにより、例えば、高い動作温度でも、パワーデバイスに代表される半導体装置が正常に機能し、半導体装置の信頼性を大幅に向上させることが容易になる。

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Abstract

To provide a silicon nitride sintered body capable of forming an electrical insulating substrate with excellent TCT characteristics. [Solution] A silicon nitride sintered body with a tensile strength of 1200 MPa or more.
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Claims

[Claim 1] A silicon nitride sintered body having a tensile strength of 1200 MPa or more.