Semiconductor device, method for manufacturing a semiconductor device

Abstract

To provide a semiconductor device that can be manufactured using a simple process. [Solution] A semiconductor device comprising: a semiconductor chip; a die pad on which the semiconductor chip is placed; a lead frame having first and second leads; a wire connecting the lead frame and the semiconductor chip; and a resin encapsulating the semiconductor chip, wherein the die pad has a first surface on which the semiconductor chip is placed and a second surface opposite to the first surface; the first lead has a first body portion, a bent portion located at the end of the first body portion, and an extended portion extending from the bent portion to the die pad; the second lead has a second body portion and an end portion located at the end of the second body portion within the resin and spaced apart from the die pad, and the height of the bent portion is greater than the height of the second lead with respect to the second surface.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

Background Art

[0002] When manufacturing a semiconductor device encapsulated with resin, for example, pins that press a die pad and an insulating sheet disposed on the bottom surface of the die pad are used (see, for example, Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] By using the above-described pins, generally, the number of steps in manufacturing a semiconductor device increases.

[0005] The present invention has been made in view of the above conventional problems, and an object thereof is to provide a semiconductor device that can be manufactured with a simple process.

Means for Solving the Problems

[0006] A primary aspect of the present invention that solves the aforementioned problems is a semiconductor device comprising: a semiconductor chip; a die pad on which the semiconductor chip is arranged; a lead frame having first and second leads; a wire connecting the lead frame and the semiconductor chip; and a resin for sealing the semiconductor chip, wherein the die pad has a first surface on which the semiconductor chip is arranged and a second surface opposite to the first surface; the first lead has a first body portion, a bent portion located at the end of the first body portion, and an extended portion extending from the bent portion to the die pad; the second lead has a second body portion and an end portion located at the end of the second body portion within the resin and spaced apart from the die pad, and the height of the bent portion is greater than the height of the second lead, with respect to the second surface.

[0007] The main aspect of the present invention that solves the aforementioned problems is a method for manufacturing a semiconductor device comprising a semiconductor chip, a die pad on which the semiconductor chip is arranged, and a lead frame having a first lead, wherein the first lead has a first main body portion, a bent portion located at the end of the first main body portion, and an extended portion extending from the bent portion to the die pad, the die pad has a first surface on which the semiconductor chip is arranged and a second surface opposite to the first surface, and is inclined downward from the horizontal plane as it moves away from the extended portion, and the method for manufacturing a semiconductor device comprises a chip arrangement step of arranging the semiconductor chip on the first surface of the die pad, a connection step of connecting the lead frame and the semiconductor chip with a wire, an arrangement step of arranging the lead frame and an insulating sheet located on the second surface side in a first mold, a mold clamping step of clamping the first mold and a second mold together, and a filling step of filling the space between the first mold and the second mold with resin. [Effects of the Invention]

[0008] According to the present invention, a semiconductor device that can be manufactured using a simple process can be provided. [Brief explanation of the drawing]

[0009] [Figure 1]This is a diagram illustrating the internal structure of the semiconductor device 10. [Figure 2] This is a schematic diagram of a part of the configuration of the semiconductor device 10. [Figure 3] This is a flowchart of the manufacturing process for semiconductor device 10. [Figure 4A] This is a diagram illustrating part of the manufacturing process for semiconductor device 10. [Figure 4B] This is a diagram illustrating part of the manufacturing process for semiconductor device 10. [Figure 4C] This is a diagram illustrating part of the manufacturing process for semiconductor device 10. [Figure 4D] This is a diagram illustrating part of the manufacturing process for semiconductor device 10. [Figure 5A] This diagram illustrates the locations of semiconductor chips 50a1 to 50a3. [Figure 5B] This is a diagram illustrating the position of semiconductor chip 50d. [Figure 6] This is a diagram for comparing semiconductor device 10 with a comparative example. [Modes for carrying out the invention]

[0010] This specification and the accompanying drawings make at least the following matters clear. Furthermore, identical or equivalent components, members, etc., shown in each drawing are denoted by the same reference numerals, and redundant explanations are omitted where appropriate.

[0011] =====Semiconductor device 10 (internal structure)===== Figure 1 is a diagram illustrating the internal structure of the semiconductor device 10 of this embodiment. Figure 2 is a schematic diagram of a part of the configuration of the semiconductor device 10. <<Definition of direction, etc.>> First, with reference to Figure 1, we define the directions in the semiconductor device 10. In the longitudinal direction of the semiconductor device 10, the direction from the top of the paper downwards is defined as the "+X direction," and the opposite direction (i.e., the direction from the bottom of the paper upwards in the longitudinal direction) is defined as the "-X direction."

[0012] In the width direction intersecting the longitudinal direction of the semiconductor device 10, the direction from left to right on the paper surface is defined as the "+Y direction", and the opposite direction (i.e., the direction from right to left on the paper surface in the width direction) is defined as the "-Y direction". Also, the direction perpendicular to the X direction and the Y direction is defined as the "Z direction". In this embodiment, for example, when the semiconductor device 10 is arranged on a horizontal plane, the zenith direction is defined as the "+Z direction", and the opposite direction is defined as the "-Z direction".

[0013] Note that both the +X direction and the -X direction may be simply referred to as the "X direction". Similarly, both the +Y direction and the -Y direction may be simply referred to as the "Y direction". Also, both the +Z direction and the -Z direction may be simply referred to as the "Z direction".

[0014] In FIG. 1, for the sake of easy understanding of the directions and the like in the semiconductor device 10, each of the +X direction, the +Y direction, and the +Z direction is represented by a line segment with an arrow. In the following description, the +X direction may be referred to as the "right direction", the -X direction may be referred to as the "left direction", and the X direction may be referred to as the "left - right direction". The +Y direction may be referred to as the "front direction (or, forward)", the -Y direction may be referred to as the "back direction (or, backward)", and the Y direction may be referred to as the "front - back direction". The +Z direction may be referred to as the "up direction (or, front - side direction)", the -Z direction may be referred to as the "down direction (or, back - side direction)", and the Z direction may be referred to as the "up - down direction" or the "height direction".

[0015] Note that the above - described definitions of directions and the like are common throughout this specification unless otherwise specified.

[0016] <<Details of the Semiconductor Device 10>> The semiconductor device 10 is an electronic component in which a power semiconductor for driving a load (not shown) and a control IC for controlling the power semiconductor are resin-sealed. As shown in FIGS. 1 and 2, the semiconductor device 10 includes lead frames 20 and 30, die pads 21a to 21d, semiconductor chips 50a1 to 50d and 60a1 to 60a3, diodes 70a1 to 70a3, an insulating sheet 90, a resin 100, and a plurality of wires. In this embodiment, each of the plurality of wires may be referred to as wire W or simply as a wire without a reference numeral for convenience.

[0017] In FIG. 1, for convenience, only the outer shape of the resin 100 in a plan view is drawn so that the internal structure of the semiconductor device 10 can be understood. In FIG. 2, for ease of understanding the structure of the semiconductor device 10, for convenience, it is drawn centering on leads 20a, 20d, 20g, die pad 21a, and insulating sheet 90 in the semiconductor device 10. Hereinafter, the details of the semiconductor device 10 will be described while appropriately referring to FIGS. 1 and 2.

[0018] The lead frame 20 is a metal member (so-called main current lead frame) for exchanging current and the like between the power semiconductor and the load, and includes a plurality of leads 20a to 20g.

[0019] Lead 20a is a metal plate-like member connected to die pad 21a (described later) on which a plurality of power semiconductors on the high side are arranged. As shown in the schematic diagram of FIG. 2, lead 20a has a main body portion 20a1, a bent portion 20a2, and an extending portion 20a3. The main body portion 20a1 is a portion that extends from the inside of the resin 100 to the outside. The bent portion 20a2 is located at the end of the main body portion 20a1 inside the resin 100 and is a portion that bends the extending portion 20a3 of the lead 20a downward (-Z direction). The extending portion 20a3 is a portion that extends from the bent portion 20a2 and is connected to the die pad 21a.

[0020] For example, lead 20a corresponds to the "first lead", and main body portion 20a1 corresponds to the "first main body portion".

[0021] The die pad 21a is a metal plate-like member on which semiconductor chips 50a1 to 50d are arranged on its front surface (the surface in the +Z direction). The die pad 21a has a roughly quadrilateral shape in plan view. Here, "roughly quadrilateral" refers to a shape consisting of four sides, including, for example, a square or a rectangle, and at least some of the corners may be cut out at an angle to the sides. In addition, in the "roughly quadrilateral" shape, some of the sides may have notches (recesses) or protrusions (convex parts).

[0022] The front surface of the die pad 21a corresponds to the "first surface," and the back surface of the die pad 21a corresponds to the "second surface." The front and back surfaces may be parallel.

[0023] The semiconductor chip 50a1 is a high-side power semiconductor, and is, for example, an IGBT (Insulated Gate Bipolar Transistor), but it may also be another power semiconductor (for example, a power MOS). Note that semiconductor chips 50a2 and 50a3 are similar to semiconductor chip 50a1, so their explanation is omitted here. Also, in Figure 2, for convenience, only the two wires W connected to semiconductor chip 50a3 are shown.

[0024] Furthermore, as shown in Figure 2, an insulating sheet 90 is attached to the back surface (-Z direction surface) of the die pad 21a. Note that in Figure 2, for convenience, only die pad 21a is shown among die pads 21a to 21d, but an insulating sheet 90 is attached to the back surface of each of the die pads 21a to 21d. The insulating sheet 90 is a resin sheet located on the -Z direction surface of the semiconductor device 10. In this embodiment, a material with excellent heat dissipation properties is used as the insulating sheet 90, so that the heat from the semiconductor chips 50a to 50d can be dissipated to the outside of the semiconductor device 10.

[0025] Leads 20b to 20d in Figure 1 are metal plate-like members similar to lead 20a. Therefore, the following explanation of leads 20b to 20d will focus on the differences from lead 20a.

[0026] The lead 20b has a main body portion 20b1, a bent portion 20b2, and an extended portion 20b3. The main body portion 20b1 is connected to the semiconductor chip 50a1 by two wires, and the extended portion 20b3 is connected to the die pad 21b.

[0027] The lead 20c has a main body portion 20c1, a bent portion 20c2, and an extended portion 20c3. The main body portion 20c1 is connected to the semiconductor chip 50a2 by two wires, and the extended portion 20c3 is connected to the die pad 21c.

[0028] The lead 20d has a main body portion 20d1, a bent portion 20d2, and an extended portion 20d3. The main body portion 20d1 is connected to the semiconductor chip 50a3 by two wires W, and the extended portion 20d3 is connected to the die pad 21d.

[0029] On the front surface of each die pad 21b to 21d, semiconductor chips 50b to 50d corresponding to the low-side power semiconductor are arranged. Each die pad 21b to 21d has a roughly quadrilateral shape in plan view. The semiconductor chips 50b to 50d are, for example, IGBTs (Insulated Gate Bipolar Transistors), but may also be other power semiconductors (for example, power MOS).

[0030] The lead 20e is a metal component connected to the semiconductor chip 50b, and has a main body 20e1 and an end portion 20e2. The main body 20e1 is the portion that extends from the inside of the resin 100 to the outside. The end portion 20e2 is the portion located at the end of the main body 20e1 inside the resin 100. In this embodiment, the main body 20e1 and the semiconductor chip 50b are connected by two wires. Also, the end portion 20e2 (i.e., the lead 20e) is separated from any die pads in the semiconductor device 10.

[0031] Leads 20f and 20g are made of the same metal material as lead 20e. Therefore, the following explanation of leads 20f and 20g will focus on the differences between them and lead 20e.

[0032] The lead 20f is a metal component connected to the semiconductor chip 50c, and has a main body 20f1 and an end portion 20f2. In this embodiment, the main body 20f1 and the semiconductor chip 50c are connected by two wires. The end portion 20f2 (i.e., the lead 20f) is separated from any die pads in the semiconductor device 10.

[0033] The lead 20g is a metal component connected to the semiconductor chip 50d, and has a main body 20g1 and an end portion 20g2. In this embodiment, the main body 20g1 and the semiconductor chip 50d are connected by two wires. The end portion 20g2 (i.e., the lead 20g) is separated from any die pads in the semiconductor device 10. The lead 20g corresponds to the "second lead," and the main body 20g1 corresponds to the "second main body."

[0034] The lead frame 30 is a lead frame (so-called control lead frame) for exchanging various signals between the drive circuit that controls the semiconductor chips 50a1 to 50d and the outside of the semiconductor device 10, and is composed of multiple leads 30a to 30f. Although the lead frame 30 contains several leads other than leads 30a to 30f, their explanation is omitted here for convenience.

[0035] Lead 30a is a metal plate-shaped member on which semiconductor chips 60a1 to 60a3 that drive semiconductor chips 50a1 to 50a3 on the high side and semiconductor chip 60b that drives semiconductor chips 50b to 50d on the low side are arranged. Numerous wires are connected to lead 30a so that semiconductor chips 60a1 to 60a3 and 60b can properly drive semiconductor chips 50a1 to 50d.

[0036] Lead 30b is a metal plate-shaped member to which wires from lead 30a and from diodes 70a1 to 70a3 (described later) are connected.

[0037] Lead 30c is a metal plate-shaped component on which diode 70a1 is placed. Diode 70a1 is a so-called bootstrap diode and is used to drive the high-side semiconductor chip 50a1.

[0038] Leads 30d and 30e, like lead 30c, are metal plate-like members on which diodes 70a2 and 70a3 are arranged. Each of diodes 70a2 and 70a3 is a bootstrap diode, similar to diode 70a1.

[0039] Lead 30f is a metal plate-shaped component used to exchange signals and other information with the semiconductor chip 60b. A wire is connected between lead 30f and the semiconductor chip 60b. For convenience, only lead 30f is described here, out of several leads used to exchange signals and other information with the semiconductor chip 60b.

[0040] <<Manufacturing method for semiconductor device 10>> Incidentally, in the manufacturing of typical semiconductor devices, pins (not shown) are used to press the die pad and insulating sheet against the mold. The semiconductor device 10 of this embodiment can be manufactured in a simple process without using such pins. The manufacturing method of the semiconductor device 10 will be described below with reference to Figures 3 and 4A to 4D.

[0041] Figure 3 is an example of a flowchart of the manufacturing process of semiconductor device 10, and Figures 4A to 4D are diagrams illustrating a part of the manufacturing process. Figures 4A to 4D schematically illustrate the positions of several components of semiconductor device 10 when viewed from the +X direction to the -X direction in the YZ plane. Specifically, Figures 4A to 4D schematically illustrate the positions of leads 20a, 20d, 20g, 30a, 30b, 30e, die pad 21a, semiconductor chips 50a3, 60a3, and diode 70a3 in the YZ plane.

[0042] In Figures 4A to 4D, lead 20d, located on the -X side of lead 20a, is at the same height as lead 20a in the Z direction. Furthermore, since the thicknesses of leads 20a and 20d in the Z direction are the same, their depiction is omitted as appropriate.

[0043] As will be explained in detail later, in this embodiment, the boundary position B1 (described later) between the inside and outside of the resin 100 of the main body portion 20a1 in lead 20a is at the same height in the Z direction as the boundary position B2 (described later) between the inside and outside of the resin 100 of the main body portion 20g1 in lead 20g. Furthermore, the thickness in the Z direction of the main body portion 20a1 in lead 20a is the same as the thickness in the Z direction of lead 20g. However, in Figures 4A to 4D, the thickness in the Z direction of lead 20g is depicted as thicker than the thickness of the main body portion 20a1 in order to facilitate understanding of the respective positions of the main body portion 20a1 and lead 20g.

[0044] In this embodiment, "height Ha and height Hb are the same height" does not mean that the values ​​of height Ha and Hb are mathematically identical; they should be approximately the same height, including manufacturing variations in the lead frame 30 of the semiconductor device 10. For example, even if height Ha and height Hb are shifted by, say, about 50 μm, they are still considered approximately the same height. Details of the "boundary position" will be described later.

[0045] Furthermore, since leads 30a, 30b, and 30e each have the same thickness and are at the same height in the Z direction, for convenience, only lead 30a is shown in this illustration, and leads 30b and 30e, which are located at the back of the page (-X direction), are omitted from the illustration.

[0046] In this embodiment, the boundary position B1 (described later) between the inside and outside of the resin 100 of the main body 20a1 of the lead 20a is at the same height in the Z direction as the boundary position B3 (described later) between the inside and outside of the resin 100 of the main body 30a1 of the lead 30a.

[0047] First, in the manufacturing process shown in Figure 3, semiconductor chips 50a1 to 50d are placed on die pads 21a to 21d, and semiconductor chips 60a to 60b and diodes 70a1 to 70a3 are placed on lead frames 30 (chip placement process S1). As a result, for example, semiconductor chip 50a3 is placed on die pad 21a as shown in Figure 4A, semiconductor chip 60a3 is placed on lead 30a, and diode 70a3 is placed on lead 30e.

[0048] By the way, in this embodiment, the die pad 21a is inclined with respect to the horizontal plane (dotted line in Figure 4A) from the lower end of the extended portion 20a3 of the lead 20a. Specifically, as the die pad 21a moves away from the extended portion 20a3 in the +Y direction, it is inclined downward from the horizontal plane (i.e., in the -Z direction). Hereinafter, in this embodiment, the angle between the horizontal plane at the lower end of the extended portion 20a3 and the back surface of the plate-shaped die pad 21a is defined as angle θ1 (>0).

[0049] Here, we have assumed that the die pad 21a is inclined downward from the horizontal plane as it moves away from the extended portion 20a3, but the same applies to die pads 21b to 21d. That is, for example, each of the die pads 21b to 21d is inclined downward from the horizontal plane as it moves away from the extended portions 20b3 to d3. Therefore, the angle between the horizontal plane and the back surface of the plate-shaped die pads 21b to 21d is angle θ1 (>0).

[0050] When the chip placement process S1 in Figure 3 is executed, a process of connecting multiple wires inside the semiconductor device 10 in Figure 1 (so-called wire bonding) is performed (connection process S2). As a result, for example, as shown in Figure 4B, the main body 20d1 of lead 20d and semiconductor chip 50a3 are connected by wire W, and semiconductor chip 50a3 and semiconductor chip 60a3 are connected by wire. Furthermore, semiconductor chip 60a3 and lead 30e are connected by wire, and diode 70a3 and lead 30b are connected by wire.

[0051] In Figures 4A and 4B, the main body parts 20a1, 20d1, 20g1 and the leads 30a, 30b, 30e are parallel to the horizontal plane. Here, for example, when the main body part 20a1 is said to be parallel to the horizontal plane, it means that the front surface of the main body part 20a1 is parallel to the horizontal plane. Similarly, when the lead 30a is said to be parallel to the horizontal plane, it means that the front surface of the lead 30a is parallel to the horizontal plane.

[0052] When connection step S2 is performed, the die pads 21a to 21d and the insulating sheets 90 are placed on the bottom surface inside the lower mold 200 with the insulating sheets 90 attached to the back surfaces of each die pad 21a to 21d (see Figure 2) (placement step S3). In this embodiment, a recess is formed inside the mold 200 so that the bottom surface inside the mold 200 is parallel to the horizontal plane.

[0053] Here, the die pads 21a to 21d and the insulating sheet 90 are fixed together, for example, with adhesive, before the lead frames 20 and 30 are placed in the mold 200, but this is not the only method. For example, the insulating sheet 90 may be placed on the bottom surface inside the mold 200, and then the die pads 21a to 21d may be placed on top of the insulating sheet 90, which has adhesive applied to its front surface.

[0054] Once the placement process S3 is executed, the process of clamping the upper mold 201 and the lower mold 200 is performed (clamping process S4). As a result, the lead frames 20 and 30 are fixed in place by the molds 200 and 201. In this embodiment, for example, the main body portion 20a1 of the lead 20a is sandwiched and fixed from above and below by the molds 200 and 201 so that it is parallel to the horizontal plane. In the clamping process S4, a portion of the lead frames 20 and 30 is exposed to the outside of the molds 200 and 201.

[0055] Here, the portion of the main body 20a1 closest to the bent portion 20a2 bends upward, and the extended portion 20a3 presses the back surface of the die pad 21a against the bottom surface inside the mold 200. Therefore, when the mold clamping process S4 is performed, the angle θ1 between the horizontal plane (in this case, for example, the front surface of the insulating sheet 90) and the back surface of the die pad 21a becomes zero (see Figure 4C). Also, at this time, the bent portion 20a2 moves above the lead 20g (for example, the end portion 20g2) due to the force that the extended portion 20a3 receives from the bottom surface inside the mold 200.

[0056] Therefore, on the back surface of the die pad 21a, for example, the height h1 of the bent portion 20a2 from a predetermined location Px where the extended portion 20a3 and the die pad 21a are connected is higher than the height h4 from the predetermined location Px to the front surface of the end portion 20g2. The height from the predetermined location Px to the bent portion 20a2 is the height h1 in Figure 4D described later, and the height from the predetermined location Px to the front surface of the end portion 20g2 is the height h4 in Figure 4D described later.

[0057] Furthermore, due to the force described above, the height h1 of the bent portion 20a2 from the predetermined point Px becomes higher than the height h4 of the portion of the lead 20a sandwiched between the molds 200 and 201 from the predetermined point Px. As will be explained in detail later, the height of the portion of the lead 20a sandwiched between the molds 200 and 201 from the predetermined point Px is the height h4 shown in Figure 4D. In other words, in the mold clamping process S4, the back surface of the die pad 21a is pressed against the mold 200 such that the height h1 becomes higher than the height h4.

[0058] Note that although only die pad 21a is shown in Figure 4C, the angle θ1 between the horizontal plane (in this case, for example, the front surface of the insulating sheet 90) and the back surfaces of die pads 21b to 21d is also zero. Furthermore, the bent portions 20b2 to 20d2 of leads 20b to 20d each move upward above lead 20g.

[0059] After the mold clamping process S4 is performed, the space inside the molds 200 and 201 is filled with resin, for example, through the filling port (not shown) of the mold 201 (filling process S5). As a result, each of the bent portions 20a2 to 20d2 of the leads 20a to 20d is maintained to be positioned above, for example, the lead 20g. In other words, each of the die pads 21a to 21d maintains a state in which it is pressing against the insulating sheet 90.

[0060] Subsequently, molds 200 and 201 are separated (mold separation step S6). As a result, a semiconductor device 10 sealed with resin is manufactured, as shown in Figure 4D. Mold 200 corresponds to the "first mold," and mold 201 corresponds to the "second mold."

[0061] The enlarged view in Figure 4D shows the height h1 of the bent portion 20a2, the height h2 of the lead 20g, and the height h3 of the lead 30a, relative to the horizontal plane (the front surface of the insulating sheet 90 or the back surface of the die pad 21a). Since leads 20g and 30a are not connected to any of the die pads 21a to 21d, they do not experience any force in the +Z direction. On the other hand, as described above, the extended portion 20a3 of lead 20a is connected to the die pad 21a, which was inclined with respect to the horizontal plane. Therefore, when the die pad 21a is horizontal (i.e., angle θ1 is zero), lead 20a will experience a force in the +Z direction from the die pad 21.

[0062] As a result, the height h1 of the bent portion 20a2 is higher than the height h2 of the lead 20g. Also, the height h1 of the bent portion 20a2 is higher than the height h3 of the lead 30a. In this embodiment, the height h2 of the lead 20g and the height h3 of the lead 30a are equal. Here, the lead 20g is used as an example of a lead not connected to the die pad, but it is not limited to this. For example, the height h1 is higher than the heights of the leads 20e, 20f, 30b to 30f. In other words, the height h1 is higher than the height of the leads not connected to the die pad. Although a detailed explanation is omitted, the heights of the bent portions 20b2 to 20d2 also increase in a similar manner to the height h1, becoming, for example, higher than the height h2.

[0063] Furthermore, as shown in Figure 4D, the height h1 of the bent portion 20a2 is higher than the height h4 of the boundary position B1 between the inside and outside of the resin 100 of the main body portion 20a1 in the lead 20a. In this embodiment, the height of the boundary position between the inside and outside of the resin 100 of all leads in the lead frame 20 and lead frame 30 is h4. Therefore, the height of the boundary position B2 between the inside and outside of the resin 100 of the main body portion 20g1 in the lead 20g, and the boundary position B3 between the inside and outside of the resin 100 of the main body portion 30a1 in the lead 30a are also height h4.

[0064] In this embodiment, the front surface of the insulating sheet 90 or the back surface of the die pad 21a is used as the reference plane and is parallel to the horizontal plane, but this is not limited to this. For example, the reference plane (i.e., the back surface of the die pad 21a) may be off by about 1° from the horizontal plane due to manufacturing variations, etc. For example, even if the back surface of the die pad 21a is off from the horizontal plane, the relationship between heights h1 to h4 with respect to the back surface of the die pad 21a remains the same as when the horizontal plane is used as the reference.

[0065] Incidentally, as shown in Figure 4D, the force from the die pad 21a to the insulating sheet 90 is strongest at positions close to the extended portion 20a3. In this embodiment, the positions of the semiconductor chips 50a1 to 50a3 on the front surface of the die pad 21a are adjusted so that the die pad 21a can press against the insulating sheet 90 even at positions away from the extended portion 20a3 in the +Y direction.

[0066] Figure 5A is a diagram illustrating the positions of semiconductor chips 50a1 to 50a3 on the die pad 21a. Here, the four sides of the roughly quadrilateral die pad 21a in a plan view (XY plane viewed from the +Z direction) are denoted as sides S1 to S4. Side S1 is the -Y side of the die pad 21a, and side S2 is the side opposite to side S1. Sides S3 and S4 are a pair of sides that intersect sides S1 and S2, respectively. Side S3 is the +X side of the die pad 21a, and side S4 is the -X side opposite to side S3.

[0067] Figure 5A shows a center line (dotted line) passing through the geometric center O1 of the die pad 21a and parallel to sides S1 and S2. Furthermore, when the distance between sides S1 and S2 is denoted as distance d0, the distance d1 (distance from side S20), which is 20% of distance d0, is also shown. Here, in the die pad 21a, the range from side S2 to distance d1 is defined as range A1, and the range from side S2 to the center line is defined as range B1.

[0068] Note that side S1 corresponds to the "first side," side S2 corresponds to the "second side," side S3 corresponds to the "third side," and side S4 corresponds to the "fourth side." Also, distance d1 corresponds to the "predetermined distance," range A1 corresponds to the "first range," and range B1 corresponds to the "second range."

[0069] In this embodiment, the extended portion 20a3 is connected to the end of side S1 of the die pad 21a that is on side S3 (the end in the +X direction). Therefore, the further the extended portion 20a3 is from side S1 in the +Y direction on the die pad 21a, the weaker the downward pressing force of the extended portion 20a3 against the die pad 21a becomes. Also, the further the extended portion 20a3 is from side S3 in the -X direction on the die pad 21a, the weaker the downward pressing force of the extended portion 20a3 against the die pad 21a becomes.

[0070] In this embodiment, in the die pad 21a, semiconductor chips 50a1 to 50a3 are arranged such that at least the +Y side edges of each semiconductor chip 50a1 to 50a3 are within range A1. Furthermore, in the die pad 21a, semiconductor chip 50a3 is positioned on the -X side (side S4 side) from the geometric center O1 of the die pad 21a.

[0071] Then, two wires W from lead 20d are connected to electrode E1 on the front surface of semiconductor chip 50a3 at positions P1 and P2, respectively. In other words, positions P1 and P2 to which the two wires W are connected are included in range B1.

[0072] As a result, as illustrated in Figure 4D, the two wires W from lead 20d press downwards against the semiconductor chip 50a3 and die pad 21a at a position away from the extension portion 20a3. While this explanation uses semiconductor chip 50a3 as an example, the same principles apply to the electrode and wire connection positions of semiconductor chips 50a1 and 50a2.

[0073] Figure 5B is a diagram illustrating the position of the semiconductor chip 50d on the die pad 21d. Here, the four sides of the roughly quadrilateral die pad 21d in a plan view (XY plane viewed from the +Z direction) are denoted as sides S10 to S40. Side S10 is the -Y side of the die pad 21d, and side S20 is the +Y side opposite to side S10. Sides S30 and S40 are a pair of sides that intersect sides S10 and S20, respectively. Side S30 is the +X side of the die pad 21d, and side S40 is the -X side opposite to side S30.

[0074] Figure 5B shows a center line (dotted line) passing through the geometric center O2 of the die pad 21d and parallel to sides S10 and S20. Furthermore, when the distance between sides S10 and S20 is denoted as distance d10, the distance d11 (distance from side S20), which is 20% of distance d10, is also shown. Here, in the die pad 21d, the range from side S20 to distance d10 is defined as range A10, and the range from side S20 to the center line is defined as range B10.

[0075] In this embodiment, the extended portion 20d3 is connected to the side S10 of the die pad 21d. Therefore, the further the extended portion 20d3 is from the side S10 in the +Y direction on the die pad 21d, the weaker the downward pressing force exerted by the extended portion 20d3 on the die pad 21d becomes.

[0076] In this embodiment, the semiconductor chip 50d is positioned on the die pad 21d such that at least its +Y side is within range A10. Two wires W from the lead 20g are connected to the electrode E10 on the front surface of the semiconductor chip 50d at positions P10 and P20, respectively. In other words, positions P10 and P20, to which the two wires W are connected, are included in range B10.

[0077] As a result, the two wires W from lead 20g press downwards against the semiconductor chip 50d and die pad 21d at a position away from the extension portion 20d3. Although semiconductor chip 50d is used as an example in this explanation, the same applies to semiconductor chips 50b and 50c (see Figure 1).

[0078] Figure 6 is a diagram illustrating the difference between the semiconductor device 10 and the comparative example. The upper part of Figure 6 is an example of an image taken with an ultrasonic flaw detection device showing the adhesion state between the die pads 21a to 21d of the comparative semiconductor device and the insulating sheet 90.

[0079] In this comparative example, the semiconductor device has no inclination between the die pads 21a and 21d. That is, the angle θ1 on the back surface of each die pad 21a to 21d is zero. Furthermore, in the comparative example, no wires are connected to the semiconductor chips 50a1 to 50d placed on the die pads 21a to 21d. Note that, apart from the two points mentioned above, the configuration of the comparative example semiconductor device is the same as that of semiconductor device 10.

[0080] In this comparative example semiconductor device, a gap is present between the die pads 21a to 21d and the insulating sheet 90 in the area enclosed by the dotted line. Note that in Figure 6, the color is darker when adhesion is good, and lighter when a gap is present.

[0081] On the other hand, as shown in the lower part of Figure 6, the color of the back side of the die pads 21a to 21d of the semiconductor device 10 in this embodiment is darker. Therefore, it can be seen that in the semiconductor device 10, the die pads 21a to 21d and the insulating sheet 90 are in close contact without any gaps, compared to the semiconductor device of the comparative example.

[0082] =====Summary===== The semiconductor device 10 and the method for manufacturing the semiconductor device 10 according to this embodiment have been described above. In the semiconductor device 10, the height h1 of the bent portion 20a2 of the lead 20a is, for example, higher than the height h2 of the lead 20g. In such a semiconductor device 10, there is no need to use pins to press the die pad 21a, etc., so the manufacturing process can be simplified.

[0083] Furthermore, in the die pad 21a, the Y-side end of the semiconductor chip 50a3 to which the wire W is connected is included in range A1. This prevents a gap from forming between the die pad 21a and the insulating sheet 90 (for example, Figure 4D).

[0084] Furthermore, in the die pad 21a, for example, the semiconductor chip 50a3 is positioned on the side S4 of the side S3 to which the extended portion 20a3 is connected (for example, Figure 5A). This makes it possible to more reliably prevent gaps from forming between the die pad 21a and the insulating sheet 90.

[0085] Furthermore, in the semiconductor chip 50a3, the two wires W are connected to positions P1 and P2 included in range B1 (for example, Figure 5A). This makes it possible to more reliably prevent gaps from forming between the die pad 21a and the insulating sheet 90.

[0086] Furthermore, in the semiconductor device 10, the height h1 of the bent portion 20a2 of the lead 20a is higher than, for example, the height h4 of the boundary position B1 between the inside and outside of the resin 100 of the main body portion 20a1 (for example, Figure 4D). In such a semiconductor device 10, there is no need to use pins to press the die pad 21a, etc., so the manufacturing process can be simplified. Note that the boundary position B1 corresponds to the "boundary portion" located at the boundary between the inside and outside of the resin 100.

[0087] Furthermore, the semiconductor device 10 can be manufactured, for example, by the method shown in Figure 3. For example, the die pad 21a has an angle θ1 (>0) between the horizontal plane at the lower end of the extended portion 20a3 and the back surface of the die pad 21a. The back surface of the die pad 21a is inclined downward (-Z direction) from the horizontal plane as it moves away from the extended portion 20a3. By manufacturing the semiconductor device 10 having such a configuration using the method shown in Figure 3, the manufacturing process can be simplified without using pins to press the die pad 21a, etc.

[0088] Furthermore, in the mold clamping step S4 of the manufacturing method shown in Figure 3, the back surface of the die pad 21a is pressed against the mold 200. As a result, for example, the height h1 of the bent portion 20a2 from a predetermined location Px where the extended portion 20a3 and the die pad 21a are connected becomes higher than the height h4 from the predetermined location Px to the front surface of the end portion 20g2 (for example, Figure 4C). This simplifies the manufacturing process by eliminating the need to use pins to press the die pad 21a, etc.

[0089] Furthermore, in the mold clamping step S4 of the manufacturing method shown in Figure 3, the back surface of the die pad 21a is pressed against the mold 200. As a result, for example, the height h1 from a predetermined point Px to the bent portion 20a2 becomes higher than the height h4 from a predetermined point Px to the portion of the lead 20a sandwiched between the molds 200 and 201 (for example, Figure 4C). This simplifies the manufacturing process without the need for pins to press the die pad 21a, etc.

[0090] In this embodiment, distance d1 is set to 20% of distance d0, but this is not limited to this, as long as the occurrence of a gap between the die pad 21a and the insulating sheet 90 can be suppressed.

[0091] The embodiments described above are provided to facilitate understanding of the present invention and are not intended to limit its interpretation. Furthermore, the present invention may be modified or improved without departing from its spirit, and it goes without saying that the present invention includes equivalents thereof. [Explanation of Symbols]

[0092] 10 Semiconductor Devices 20,30 Lead Frames 20a~20g, 30a~30f lead 20a1~20g1 Main body 20a2~20d2 Bend part 20a3~20d3 extension part 20e2~20g2 End 21a~21d Die pad 50a1~50a3, 50b~50d, 60a1~60a3, 60b Semiconductor chips 70a1~70a3 diodes 90 Insulating Sheets 100 resin 200,201 molds

Claims

1. Semiconductor chips and A die pad on which the semiconductor chip is arranged, and a lead frame having first and second leads, The lead frame and the wires connecting the semiconductor chip, A resin for sealing the semiconductor chip, Equipped with, The aforementioned die pad is The semiconductor chip has a first surface on which it is arranged, and a second surface opposite to the first surface, The first lead is, It has a first main body, a bent portion located at the end of the first main body, and an extended portion extending from the bent portion to the die pad, The second lead is, It has a second main body and an end portion located at the end of the second main body within the resin and spaced apart from the die pad, With respect to the second surface, the height of the bent portion is higher than the height of the second lead. Semiconductor equipment.

2. A semiconductor device according to claim 1, The die pad has a substantially quadrilateral shape in plan view, having a first side and a second side opposite to the first side. The aforementioned extension portion is, Connected to the first side of the die pad, The aforementioned semiconductor chip is The die pad is positioned such that the end of the semiconductor chip on the second side is included in a first range from the second side of the die pad to a predetermined distance from the die pad. The predetermined distance is, The distance between the first side and the second side is 20%. Semiconductor equipment.

3. A semiconductor device according to claim 2, The die pad has a third side that intersects the first side and a fourth side that faces the third side. The aforementioned extension portion is, Connected to the third side, The aforementioned semiconductor chip is Arranged on the fourth side, Semiconductor equipment.

4. A semiconductor device according to claim 2 or claim 3, The position where the wire is connected to the semiconductor chip is, In a plan view, a center line passing through the center of the die pad and parallel to the second side, and a second range included between the second side, Semiconductor equipment.

5. Semiconductor chips and A lead frame having a die pad on which the semiconductor chip is arranged and a first lead, The lead frame and the wires connecting the semiconductor chip, A resin for sealing the semiconductor chip, Equipped with, The aforementioned die pad is The semiconductor chip has a first surface on which it is arranged, and a second surface opposite to the first surface, The first lead is, The device comprises a first main body portion having a portion extending from the inside to the outside of the resin, a bent portion located at the end of the first main body portion inside the resin, and an extended portion extending from the bent portion to the die pad, With respect to the second surface, the height of the bent portion is higher than the height of the boundary between the inside and outside of the resin of the first main body. Semiconductor equipment.

6. A method for manufacturing a semiconductor device comprising a semiconductor chip, a die pad on which the semiconductor chip is arranged, and a lead frame having a first lead, The first lead is, It has a first main body, a bent portion located at the end of the first main body, and an extended portion extending from the bent portion to the die pad, The aforementioned die pad is The device has a first surface on which the semiconductor chip is arranged, and a second surface opposite to the first surface, wherein the second surface is inclined downward from the horizontal plane as it moves away from the extended portion. A chip placement step of placing the semiconductor chip on the first surface of the die pad, A connection step of connecting the lead frame and the semiconductor chip with a wire, The arrangement step involves placing the lead frame and the insulating sheet located on the second side into the first mold, A mold clamping step in which the first mold and the second mold are clamped together, A filling step of filling the space between the first mold and the second mold with resin, A method for manufacturing a semiconductor device.

7. A method for manufacturing a semiconductor device according to claim 6, The semiconductor device comprises a second main body and a second lead located at the end of the second main body within the resin and having an end spaced apart from the die pad. In the aforementioned mold clamping process, A portion of the first main body of the first lead and a portion of the second main body of the second lead are exposed to the outside of the first mold and the second mold. The second surface of the first lead is pressed against the first mold such that the height from a predetermined point on the second surface of the bent portion of the first lead is greater than the height from a predetermined point on the end of the second lead in the space between the first mold and the second mold. A method for manufacturing a semiconductor device.

8. A method for manufacturing a semiconductor device according to claim 6, In the aforementioned mold clamping process, A portion of the first lead is exposed to the outside of the first mold and the second mold. The second surface of the first lead is pressed against the first mold such that the height from a predetermined point on the second surface of the bent portion of the first lead is greater than the height from a predetermined point on the portion sandwiched between the first mold and the second mold. A method for manufacturing a semiconductor device.

Images