Method for manufacturing a light-emitting device

Abstract

To provide a method for manufacturing light-emitting devices that can efficiently produce light-emitting devices. [Solution] A method for manufacturing a light-emitting device comprises the steps of: irradiating a laser beam from the first surface side of the first intermediate body with the light-emitting surface of the first intermediate body, which has a light-transmitting first support substrate, a resin layer having a third surface in contact with a second surface and a fourth surface located opposite to the third surface, and a light source having an electrode surface in contact with the fourth surface and a light-emitting surface located opposite to the electrode surface, while the light-emitting surface of the first intermediate body is in contact with the first adhesive surface of the second support substrate, thereby removing a portion of the third surface side of the resin layer; separating the first support substrate from the first intermediate body to obtain a second intermediate body in which the resin layer and the light source are supported by the second support substrate; covering the resin layer with an adhesive member so as to be in contact with the resin layer in the second intermediate body; and peeling the resin layer from the electrode surface together with the adhesive member.

Description

[Technical Field]

[0001] This disclosure relates to a method for manufacturing a light-emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses a method in which, with a light-emitting element supported on a substrate via a resin member, a laser beam is irradiated onto the resin member from the substrate side, thereby partially removing the resin member between the substrate and the light-emitting element, allowing the light-emitting element to be removed from the substrate and bonded to another adhesive support substrate. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-86403 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] This disclosure aims to provide a method for manufacturing a light-emitting device that can efficiently produce the light-emitting device. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a method for manufacturing a light-emitting device comprises the steps of: preparing a first intermediate having a first support substrate having a first surface and a second surface located opposite to the first surface and being light-transmitting; a resin layer having a third surface in contact with the second surface and a fourth surface located opposite to the third surface; and a light source having an electrode surface in contact with the fourth surface and a light-emitting surface located opposite to the electrode surface; preparing a second support substrate having a first adhesive surface; irradiating the first intermediate with laser light from the first surface side of the first intermediate while the light-emitting surface of the first intermediate and the first adhesive surface of the second support substrate are in contact, thereby removing a portion of the third surface side of the resin layer; separating the first support substrate from the first intermediate to obtain a second intermediate in which the resin layer and the light source are supported by the second support substrate; covering the resin layer with an adhesive member so as to be in contact with the resin layer in the second intermediate; and peeling the resin layer from the electrode surface together with the adhesive member. [Effects of the Invention]

[0006] According to this disclosure, it is possible to provide a method for manufacturing a light-emitting device that can efficiently produce the light-emitting device. [Brief explanation of the drawing]

[0007] [Figure 1A] This is a schematic cross-sectional view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1B] This is a schematic cross-sectional view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1C] This is a schematic cross-sectional view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1D] This is a schematic cross-sectional view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1E] This is a schematic cross-sectional view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1F] This is a schematic plan view illustrating one step in the manufacturing method of the light-emitting device according to the first embodiment. [Figure 1G] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1H] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1I] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1J] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1K] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1L] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1M] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1N] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 10] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1P] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 1Q] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the first embodiment. [Figure 2A] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the second embodiment. [Figure 2B] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the second embodiment. [Figure 2C] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the second embodiment. [Figure 2D] It is a schematic cross-sectional view for explaining a process of a manufacturing method of a light-emitting device according to the second embodiment. [Figure 3]This is a schematic plan view of a light-emitting element according to an embodiment. [Figure 4] Figure 3 is a schematic cross-sectional view along line IV-IV. [Figure 5] This is a schematic plan view of the second intermediate body. [Figure 6] This is a schematic plan view of the resin layer peeled off together with the adhesive component. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings. The dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to be limiting unless otherwise specified, but are merely illustrative examples. The size and positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same name and reference numeral indicate the same or identical member, and detailed explanations will be omitted as appropriate. In addition, in some cases, end view diagrams showing only the cut surface will be shown as cross-sectional views.

[0009] In the following description, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these) may be used. However, these terms are used only for clarity to indicate the relative directions or positions in the referenced drawings. If the relative direction or position relationship expressed by terms such as "up" and "down" in the referenced drawings is the same, the arrangement in drawings other than those disclosed, actual products, etc., does not have to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "up (or down)" includes, for example, the case where two members are assumed to be in contact with each other, and the case where the two members are not in contact with each other, but one member is located above (or below) the other member. Furthermore, in this specification, "rectangle" means that the angles of the four corners are allowed to vary by 90 degrees ± 5 degrees, and includes shapes that approximate rectangles, such as those with chamfered or rounded corners.

[0010] [First Embodiment] A method for manufacturing a light-emitting device according to the first embodiment will be described with reference to Figures 1A to 1Q. The method for manufacturing a light-emitting device according to the first embodiment includes the steps of preparing a first intermediate, preparing a second support substrate, removing a portion of the third surface side of the resin layer, obtaining a second intermediate, covering the resin layer with an adhesive member, and peeling the resin layer from the electrode surface. Each step will be described below.

[0011] <Steps to prepare the first intermediate> Figure 1E is a schematic cross-sectional view of the first intermediate body 100. The first intermediate body 100 includes a first support substrate 10, a resin layer 50, and a light source 40. Figure 1F is a schematic plan view of the first intermediate body 100 as seen from the first surface 11 side of the first support substrate 10. In this embodiment, the first intermediate body 100 includes a plurality of light sources 40 and a plurality of resin layers 50. As shown in Figure 1F, the plurality of light sources 40 are arranged in two directions that are orthogonal to each other in a plan view. The plurality of resin layers 50 are arranged in two directions that are orthogonal to each other in a plan view.

[0012] As shown in Figure 1E, the first support substrate 10 has a first surface 11 and a second surface 12 located on the opposite side of the first surface 11 in the thickness direction of the first support substrate 10. The thickness direction of the first support substrate 10 is the direction that connects the first surface 11 and the second surface 12 by the shortest distance. The first support substrate 10 is transparent to laser light L, which will be described later. As the first support substrate 10, for example, one that has a transmittance of 60% or more to laser light L, which will be described later, preferably 70% or more, and more preferably 80% or more. As the first support substrate 10, for example, a sapphire substrate can be used.

[0013] The resin layer 50 has a third surface 53 and a fourth surface 54. The third surface 53 is in contact with the second surface 12 of the first support substrate 10. The fourth surface 54 is located on the opposite side of the third surface 53 in the thickness direction of the resin layer 50. The thickness direction of the resin layer 50 is the direction that connects the third surface 53 and the fourth surface 54 by the shortest distance.

[0014] In this embodiment, each of the multiple resin layers 50 is paired with each of the multiple light sources 40 and arranged on the second surface 12 of the first support substrate 10. That is, the first intermediate body 100 includes multiple resin layers 50 in contact with the second surface 12 of the first support substrate 10, and each of the multiple light sources 40 is arranged in contact with each of the multiple resin layers 50.

[0015] In this embodiment, the resin layer 50 includes a plurality of layers stacked in the thickness direction. Specifically, the resin layer 50 has a release layer 51 including a third surface 53 and a light source support layer 52 including a fourth surface 54. For example, the thickness of the release layer 51 is thinner than the thickness of the light source support layer 52. It is preferable to use, for example, a photosensitive resin as the release layer 51. This allows the release layer 51 to be easily removed by irradiation with laser light L in the removal process described later. As the light source support layer 52, for example, a resin containing epoxy resin, acrylic resin, or polyimide resin as the main component can be used. The resin layer 50 may be a single layer of resin. If the resin layer 50 is a single layer, for example, the same resin as the light source support layer 52 can be used.

[0016] The light source 40 is positioned above the second surface 12 of the first support substrate 10 via a resin layer 50. The light source 40 has an electrode surface 42 and a light-emitting surface 41. The electrode surface 42 is supported on the second surface 12 of the first support substrate 10 via the resin layer 50. The electrode surface 42 is in contact with the fourth surface 54 of the resin layer 50. The light-emitting surface 41 of the light source 40 is located on the opposite side of the electrode surface 42.

[0017] In this embodiment, the light source 40 includes a light-emitting element 20 and a light-transmitting member 30 disposed on the light-emitting element 20. Specifically, the light source 40 has a light-emitting element 20 including an electrode surface 42 and a light-transmitting member 30 including a light-emitting surface 41. The light-emitting element 20 has a semiconductor structure 21 and electrodes 22 disposed on the semiconductor structure 21. The electrodes 22 have a positive electrode 22p and a negative electrode 22n. The electrode surface 42 of the light source 40 includes the surface of the electrode 22 facing the second surface 12 of the first support substrate 10. In this specification, the electrode surface 42 refers to the surface of the light source 40 that is in contact with the resin layer 50, including not only the portion where the electrodes 22 are disposed in a plan view, but also the portion where the electrodes 22 are not disposed. The resin layer 50 is disposed so as to be in contact with the electrode surface 42. In this embodiment, the light source support layer 52 in the resin layer 50 is in contact with the electrode surface 42 of the light-emitting element 20 in the light source 40.

[0018] The light-transmitting member 30 is a member that can transmit light emitted from the light-emitting element 20 and emit it to the outside. The light-transmitting member 30 may include a light-diffusing material or a phosphor capable of wavelength conversion of at least a portion of the incident light. The light-transmitting member 30 can be formed from, for example, a light-transmitting resin, glass, ceramics, etc. Examples of light-transmitting members 30 containing a phosphor include a sintered body of a phosphor, or a resin, glass, ceramics, or other inorganic material containing a phosphor. Alternatively, a resin layer containing a phosphor may be formed on the surface of a molded body of resin, glass, ceramics, etc. The thickness of the light-transmitting member 30 is preferably greater than the thickness of the light-emitting element 20. The thickness of the light-transmitting member 30 is, for example, 50 μm or more and 300 μm or less.

[0019] The phosphor contained in the light-transmitting member 30 is a yttrium aluminum garnet-based phosphor (for example, (Y,Gd)3(Al,Ga)5O 12 Ce), lutetium-aluminum-garnet phosphors (e.g., Lu3(Al,Ga)5O 12 Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10(PO4)6Cl2:Eu), SAE series phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate series phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate series phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β - sialon series phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α - sialon series phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride series phosphors, LSN series phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN series phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA series phosphors (e.g., SrLiAl3N4:Eu), CASN series phosphors (e.g., CaAlSiN3:Eu) or SCASN series phosphors (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride series phosphors, KSF series phosphors (e.g., K2SiF6:Mn), KSAF series phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn Here, x satisfies 0 < x < 1.), or fluoride series phosphors such as MGF series phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 Here, FA and MA represent formamidinium and methylammonium, respectively.), II - VI group quantum dots (e.g., CdSe), III - V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) etc. can be used.

[0020] Figure 1F is a plan view of the first intermediate body 100 as seen from the first support substrate 10 side. In Figure 1F, the outer edge 30E of the translucent member 30 and the outer edge 20E of the light-emitting element 20 are shown by dashed lines. In plan view, the translucent member 30 and the light-emitting element 20 are, for example, rectangles, etc. In plan view, for example, the outer edge 20E of the light-emitting element 20 is located inside the outer edge 30E of the translucent member 30. In other words, as seen from the first support substrate 10 side, the light-emitting surface 41 of the light source 40 encloses the electrode surface 42 of the light source 40. Also, as seen from the first support substrate 10 side, the outer edge of the resin layer 50 coincides with the outer edge 20E of the light-emitting element 20.

[0021] The first intermediate 100 can be obtained by the process described below, with reference to Figures 1A to 1F.

[0022] The step of preparing the first intermediate 100 may include the step of forming the first structure 101 shown in Figure 1A. In the step of forming the first structure 101, a plurality of light-emitting elements 20 are formed on the element substrate 110. The step of forming a plurality of light-emitting elements 20 on the element substrate 110 includes the steps of forming a semiconductor layer on the element substrate 110, for example by MOCVD (Metal Organic Chemical Vapor Deposition), forming a plurality of electrodes 22 on the semiconductor layer, and separating the semiconductor layer into a plurality of semiconductor structures 21. As the element substrate 110, for example, sapphire, spinel (MgA 12 O4), GaN, SiC, ZnS, ZnO, GaAs, or Si can be used.

[0023] As shown in Figure 1B, a first structure 101, which includes an element substrate 110 and a plurality of light-emitting elements 20, is placed on the second surface 12 of a first support substrate 10 via a single resin layer 50 to obtain a second structure 102. The resin layer 50 is continuous between adjacent light-emitting elements 20. In the second structure 102, the light-emitting elements 20 are supported on the second surface 12 of the first support substrate 10 via the resin layer 50. The resin layer 50 is placed between the first structure 101 and the second surface 12 of the first support substrate 10, and between adjacent light-emitting elements 20.

[0024] In the second structure 102, the element substrate 110 is separated from the light-emitting element 20. As a result, the element light-emitting surface 20A of the light-emitting element 20 is exposed to the outside, as shown in Figure 1C. The element light-emitting surface 20A is the surface located on the opposite side of the semiconductor structure 21 where the electrodes 22 are arranged. The element substrate 110 can be separated from the light-emitting element 20 by removing it, for example, by the Laser Lift Off (LLO) method, grinding, polishing, etching, etc. Furthermore, after removing the element substrate 110, the element light-emitting surface 20A may be roughened. The element light-emitting surface 20A can be roughened, for example, by wet etching using an alkaline solution such as TMAH (Tetramethylammonium hydroxide). Roughening the element light-emitting surface 20A can improve the light extraction efficiency of the light-emitting element 20. In addition, the element light-emitting surface 20A can be covered with a protective film such as silicon oxide that transmits light from the light-emitting element 20.

[0025] After separating the element substrate 110, as shown in Figure 1D, a portion of the resin layer 50 located between adjacent light-emitting elements 20 is removed along the thickness direction, for example, by the RIE (Reactive Ion Etching) method. This separates the resin layer 50 into multiple resin layers 50 that are paired with each of the multiple light-emitting elements 20.

[0026] After separating the resin layer 50 into multiple parts, a translucent member 30 is placed on the element light-emitting surface 20A of the light-emitting element 20, as shown in Figure 1E. This gives rise to a first intermediate body 100. The translucent member 30 is placed on the element light-emitting surface 20A via a translucent adhesive containing, for example, silicone resin. In the first intermediate body 100, each of the multiple translucent members 30 is placed in pairs with the multiple light-emitting elements 20. The light source 40 does not have to include the translucent member 30. If the light source 40 does not include the translucent member 30, the element light-emitting surface 20A of the light-emitting element 20 becomes the light-emitting surface 41 of the light source 40. The first intermediate body 100 may be prepared by purchase or other means.

[0027] <Process for preparing the second support substrate> Figure 1G is a schematic cross-sectional view of the second support substrate 120. The second support substrate 120 has a first adhesive surface 121. Specifically, the second support substrate 120 has a laminated structure in which an adhesive layer 120B is arranged on a glass substrate 120A, and has a first adhesive surface 121 which is the surface of the adhesive layer 120B. As the adhesive layer 120B, for example, a resin member containing silicone resin or acrylic resin as a base material can be used. Alternatively, the second support substrate 120 may be an adhesive sheet or the like containing an adhesive layer.

[0028] <Step to remove a portion of the third surface side of the resin layer> As shown in Figure 1H, the light-emitting surface 41 of the first intermediate 100 is brought into contact with the first adhesive surface 121 of the second support substrate 120. This allows the first intermediate 100 to be fixed onto the second support substrate 120. The resin layer 50 is located between the first support substrate 10 and the light source 40, and the light source 40 is located between the resin layer 50 and the second support substrate 120.

[0029] As shown in Figure 1I, with the light-emitting surface 41 of the first intermediate 100 in contact with the first adhesive surface 121 of the second support substrate 120, laser light L is irradiated from the first surface 11 side of the first support substrate 10 of the first intermediate 100 to remove a portion of the third surface 53 side of the resin layer 50. The laser light L passes through the first support substrate 10 and irradiates the resin layer 50, and passes through the resin layer 50 and irradiates the electrode surface 42 of the light source 40. The wavelength of the laser light L is, for example, light having an emission peak wavelength in the wavelength range of 150 nm to 1600 nm, preferably having an emission peak wavelength in the wavelength range of 150 nm to 600 nm, and more preferably having an emission peak wavelength in the wavelength range of 250 nm to 400 nm. By having an emission peak wavelength in the wavelength range of 250 nm to 400 nm, the laser light L can be more easily absorbed by the resin layer 50 in the removal process described later. The laser light L may be irradiated onto the multiple resin layers 50 and the electrode surfaces 42 of the multiple light sources 40 all at once, or it may be irradiated in multiple separate passes.

[0030] In this embodiment, the step of removing a portion of the third surface 53 side of the resin layer 50 includes the step of removing the release layer 51. The portion of the third surface 53 side of the resin layer 50 is removed by the decomposition of the release layer 51 upon irradiation with laser light L. After irradiation with laser light L, the light source support layer 52 remains on the light source 40. Since the release layer 51 is, for example, a photosensitive resin, it can be efficiently removed by irradiation with laser light L. In this specification, the light source support layer 52, which is the remaining portion of the resin layer 50 after the release layer 51, which is a part of the resin layer 50, has been removed, is also referred to as the resin layer 50.

[0031] Furthermore, the step of removing a portion of the third surface 53 side of the resin layer 50 includes a step of reducing the adhesion between the resin layer 50 and the electrode surface 42 of the light source 40 by irradiation with laser light L.

[0032] A portion of the laser light L is absorbed by the resin layer 50, and a portion of it is transmitted through the resin layer 50. The laser light L that has been transmitted through the resin layer 50 is irradiated onto the electrode surface 42 of the light source 40. A portion of the laser light L irradiated onto the electrode surface 42 of the light source 40 is absorbed by the electrode surface 42 of the light source 40, and a portion of it is reflected by the electrode surface 42 of the light source 40. As a result of a portion of the laser light L being absorbed by the electrode surface 42 of the light source 40, the electrode surface 42 of the light source 40 and the portion of the resin layer 50 that is in contact with the electrode surface 42 of the light source 40 are heated. At this time, due to the difference in the coefficient of linear expansion between the electrode surface 42 of the light source 40 and the resin layer 50, thermal stress is generated in the portion of the resin layer 50 that is in contact with the electrode surface 42 of the light source 40, and the adhesion force between the resin layer 50 and the electrode surface 42 of the light source 40 decreases. Furthermore, as a portion of the laser light L is reflected by the electrode surface 42 of the light source 40, the portion of the resin layer 50 on the fourth surface 54 side is altered by the energy of the laser light L and the reflected light of the laser light L. This further reduces the adhesion between the resin layer 50 and the electrode surface 42 of the light source 40.

[0033] Preferably, the outermost surface of the resin layer 50 in contact with the fourth surface 54 on the electrode surface 42 of the light source 40 contains Au. By including Au on the outermost surface of the electrode surface 42 of the light source 40, for example, when the laser light L has an emission peak wavelength in the wavelength range of 250 nm to 400 nm, the electrode surface 42 of the light source 40 becomes more likely to absorb the laser light L, and the adhesion between the resin layer 50 and the electrode surface 42 of the light source 40 can be more easily reduced.

[0034] The gas pressure generated by the decomposition of the release layer 51 due to irradiation with laser light L creates a force on the resin layer 50 and the light source 40 that moves them away from the second surface 12 of the first support substrate 10. In this embodiment, the process includes a step of irradiating the resin layer 50 and the light source 40 with laser light L while the light-emitting surface 41 of the light source 40 is in contact with the first adhesive surface 121 of the second support substrate 120 to remove the release layer 51. In other words, the laser light L is irradiated while the positions of the light source support layer 52 and the light source 40 are fixed by the second support substrate 120. As a result, in the step of removing a portion of the third surface 53 side of the resin layer 50, even after the release layer 51 has decomposed, the laser light L can be irradiated while maintaining a constant distance between the electrode surface 42 of the light source 40 and the laser light source. As a result, a sufficient amount of laser light L to reduce the adhesion force between the resin layer 50 and the electrode surface 42 of the light source 40 can be irradiated onto the resin layer 50 and the electrode surface 42 of the light source 40.

[0035] <Step to obtain the second intermediate> After removing a portion of the resin layer 50 by irradiation with laser light L, the first support substrate 10 is separated from the first intermediate body 100 to obtain the second intermediate body 200 shown in Figure 1J. In this embodiment, after removing the release layer 51, which is a portion of the resin layer 50, by irradiation with laser light L, the first support substrate 10 is separated from the first intermediate body 100 to obtain the second intermediate body 200 shown in Figure 1J. The second intermediate body 200 has a second support substrate 120, a resin layer 50 supported by the second support substrate 120, and a light source 40. In the second intermediate body 200, the surface located opposite the fourth surface 54 of the resin layer 50 constitutes a portion of the outermost surface.

[0036] In this embodiment, as shown in Figure 1J, the resin layer 50 has a peeled portion 50A where a part of the fourth surface 54 of the resin layer 50 has peeled off from the electrode surface 42 of the light source 40. The outer edge of the resin layer 50 and the outer edge of the electrode surface 42 of the light source 40 have a larger amount of displacement from the center due to linear expansion compared to the center. Therefore, the outer edge of the part where the resin layer 50 and the electrode surface 42 of the light source 40 are in contact is more susceptible to the effects of thermal stress due to the difference in linear expansion coefficients compared to the center. Consequently, a part of the outer edge side of the fourth surface 54 of the resin layer 50 is prone to peeling off from the electrode surface 42 of the light source 40. Note that the resin layer 50 does not necessarily have to have a peeled portion 50A.

[0037] <Process of covering the resin layer with an adhesive material> After the step of obtaining the second intermediate 200, as shown in Figure 1K, the resin layer 50 in the second intermediate 200 is covered with an adhesive member 300 so as to be in contact with the resin layer 50. The adhesive member 300 is, for example, a flexible adhesive sheet.

[0038] <Process of peeling the resin layer from the electrode surface together with the adhesive component> After the step of covering the resin layer 50 with the adhesive member 300, the resin layer 50 is peeled off from the electrode surface 42 of the light source 40 together with the adhesive member 300, as shown in Figure 1L. By peeling the resin layer 50 off from the electrode surface 42 of the light source 40, the electrode surface 42 of the light source 40 is exposed to the outside, as shown in Figure 1M.

[0039] According to this embodiment, the adhesion between the resin layer 50 and the electrode surface 42 of the light source 40 is reduced by irradiation with laser light L, so that the resin layer 50 can be easily peeled off together with the adhesive member 300. Peeling off the resin layer 50 using the adhesive member 300 can shorten the process time and reduce the thermal load on the light source 40 compared to removing the resin layer 50 by etching such as RIE.

[0040] As shown in Figure 1L, the resin layer 50 can be peeled off the light source 40 by pulling the adhesive member 300 diagonally upward relative to the plane on which the light-emitting surface 41 of the light source 40 is located. At this time, it is preferable that the angle θ between the tension direction T applied to the adhesive member 300 and the plane on which the light-emitting surface 41 of the light source 40 is located is 45° or more and 135° or less. This makes it easier to peel off the resin layer 50, starting from the peeled portion 50A of the resin layer 50.

[0041] The outermost surface of the electrode surface 42 of the light source 40 preferably contains Au. Specifically, the outermost surface of the electrode 22 on the electrode surface 42 of the light source 40 preferably contains Au. Because Au has lower adhesion to resin compared to other metals, it is possible to easily peel the resin layer 50 from the light source 40.

[0042] In a plan view, the area of ​​the electrode 22 on the electrode surface 42 of the light source 40 preferably occupies 60% or more of the area of ​​the electrode surface 42 of the light source 40, and more preferably occupies 70% or more. This increases the area of ​​the part where the adhesion between the resin layer 50 and the electrode surface 42 of the light source 40 tends to decrease, and as a result, the resin layer 50 can be easily peeled off from the light source 40.

[0043] In this embodiment, when viewed from the second support substrate 120 side, the light-emitting surface 41 of the light source 40 encloses the electrode surface 42 of the light source 40. In other words, in the light source 40, the light-emitting surface 41, which has a larger area than the electrode surface 42, is in close contact with the first adhesive surface 121 of the second support substrate 120. This improves the adhesion between the second support substrate 120 and the light source 40, and reduces the amount of the light source 40 that peels off from the second support substrate 120 together with the adhesive member 300 and the resin layer 50 during the process of peeling the resin layer 50 off from the electrode surface 42 of the light source 40.

[0044] In this embodiment, multiple resin layers 50 are arranged in pairs with multiple light-emitting elements 20. That is, the resin layers 50 are not continuous between adjacent light-emitting elements 20, but are separated for each set of light-emitting elements 20. Therefore, irradiation with laser light L reduces the adhesion between each of the multiple resin layers 50 and the electrode surfaces 42 of the multiple light sources 40. As a result, the multiple resin layers 50 can be peeled off from the multiple light sources 40 at once, together with the adhesive member 300.

[0045] The manufacturing method of the light-emitting device according to the first embodiment may further include the steps described below, after the step of peeling off the resin layer 50 together with the adhesive member 300.

[0046] <Step to separate the second support substrate from the light source> After the step of peeling off the resin layer 50, the second support substrate 120 is separated from the light source 40. The step of separating the second support substrate 120 from the light source 40 includes bringing the electrode surface 42 of the light source 40 into contact with the second adhesive surface 131 of the third support substrate 130, as shown in Figure 1N. The light source 40 and the second support substrate 120 are supported by the third support substrate 130. Examples of the third support substrate 130 include heat-resistant resin sheets, UV-curing sheets, and other materials known in the art.

[0047] With the electrode surface 42 of the light source 40 in contact with the second adhesive surface 131 of the third support substrate 130, the second support substrate 120 is separated from the light source 40. As a result, the light-emitting surface 41 of the light source 40 is exposed to the outside, as shown in Figure 1O.

[0048] Preferably, the adhesion force between the second adhesive surface 131 of the third support substrate 130 and the electrode surface 42 of the light source 40 is higher than the adhesion force between the first adhesive surface 121 of the second support substrate 120 and the light-emitting surface 41 of the light source 40. This reduces the likelihood of the light source 40 peeling off from the third support substrate 130 together with the second support substrate 120 during the process of separating the second support substrate 120 from the light source 40.

[0049] <Process of placing the light source on the mounting substrate> After the step of separating the second support substrate 120 from the light source 40, the light source 40 is placed on the mounting substrate 400 as shown in Figure 1P. One method of placing the light source 40 on the mounting substrate 400 is flip-chip mounting.

[0050] If the third support substrate 130 is a UV-curing sheet, the second adhesive surface 131 of the third support substrate 130 can be cured by irradiating the third support substrate 130 with ultraviolet light before placing the light source 40 on the mounting substrate 400, thereby reducing the adhesion force between the electrode surface 42 of the light source 40 and the second adhesive surface 131 of the third support substrate 130. This makes it easier for the light source 40 to be attached to the light-emitting surface 41 by an adsorption means such as a collet.

[0051] In this embodiment, the light source 40 has a translucent member 30 that is thicker than the light-emitting element 20. The thickness of the light-emitting element 20 is, for example, 10 μm to 30 μm, and the thickness of the translucent member 30 is, for example, 50 μm to 300 μm. Also, the area of ​​the translucent member 30 in a plan view is larger than the area of ​​the light-emitting element 20. Furthermore, it is preferable to use a translucent member 30 with a hardness of, for example, 3 to 10 on the Mohs hardness scale. By having the translucent member 30 of the light source 40 have the above-mentioned thickness, area, and hardness, the mechanical strength of the light source 40 is improved, and damage such as cracking and chipping of the light source 40 during manufacturing and use can be reduced.

[0052] In this embodiment, in the steps of separating the first support substrate 10 from the light source 40 by irradiation with the laser light L shown in Figure 1I, and peeling the resin layer 50 from the light source 40 together with the adhesive member 300 shown in Figure 1L, the light-transmitting member 30 is in contact with the first adhesive surface 121 of the second support substrate 120. As a result, compared to the case where the light-emitting element 20 is in contact with the first adhesive surface 121, damage such as cracking or chipping of the light-emitting element 20 during the step of peeling the resin layer 50 from the light source 40 together with the adhesive member 300 can be reduced.

[0053] The mounting substrate 400 is a component on which the light source 40 is placed. The mounting substrate 400 has a base material portion 401 and a wiring portion disposed on the upper surface of the base material portion 401. The base material portion 401 is, for example, substantially rectangular parallelepiped or substantially cubic in shape. It is preferable to use an insulating material for the base material portion 401 that does not easily transmit light emitted from the light source 40 and ambient light. Examples of materials for the base material portion 401 include ceramics such as aluminum oxide, aluminum nitride, silicon nitride, and mullite; resins such as epoxy resin, silicone resin, modified epoxy resin, urethane resin, phenolic resin, polyimide resin, BT resin, and polyphthalamide; semiconductors such as silicon; single materials of metals such as Cu and Al; and composite materials thereof. Among these, ceramics with excellent heat dissipation properties can be suitably used as the material for the base material portion 401. The wiring portion includes at least a positive wiring portion 402p and a negative wiring portion 402n disposed on the upper surface of the base material portion 401. The wiring section may further include external connection terminals located on the lower surface opposite to the upper surface. In this case, the positive wiring section 402p and the negative wiring section 402n located on the upper surface of the base material 401 may be connected to the external connection terminals via, for example, relay wiring located inside or on the side of the base material 401. Examples of materials for the wiring section include metals such as Fe, Cu, Ni, Al, Ag, Au, Pt, Ti, W, and Pd, or alloys containing at least one of these.

[0054] In this embodiment, the positive electrode 22p on the electrode surface 42 of the light source 40 is joined to the positive wiring section 402p via a conductive joining member 450, and is electrically connected to the positive wiring section 402p. The negative electrode 22n on the electrode surface 42 of the light source 40 is joined to the negative wiring section 402n via the joining member 450, and is electrically connected to the negative wiring section 402n. As the joining member 450, one of the following can be used: bumps such as Au, Ag, or Cu; solder such as Au-Sn; and brazing material such as a low-melting-point metal.

[0055] <Step of arranging light-reflective material> After the step of placing the light source 40 on the mounting substrate 400, as shown in Figure 1Q, the light-reflective member 500 is placed on the mounting substrate 400 so as to cover the side surface of the light source 40. This gives rise to the light-emitting device 1 according to the embodiment. The light-emitting device 1 comprises the mounting substrate 400, the bonding member 450, the light source 40, and the light-reflective member 500. The light-emitting surface 41 of the light source 40 is exposed from the light-reflective member 500. Note that the light-emitting device 1 does not necessarily have the light-reflective member 500.

[0056] The light-reflecting member 500 has reflectivity to light emitted by the light source 40. The light-reflecting member 500 is, for example, a member made by containing particles of a light-reflecting substance in a translucent resin. Examples of resins used for the light-reflecting member 500 include resins or hybrid resins containing one or more of the following: silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, acrylic resin, phenolic resin, bismaleimidotriazine resin, and polyphthalamide resin. Among these, it is particularly preferable to use a silicone resin that has excellent light resistance, heat resistance, electrical insulation properties, and flexibility. Examples of light-reflecting substances include titanium dioxide, silicon dioxide, aluminum oxide, zirconium oxide, magnesium oxide, potassium titanate, barium titanate, zinc oxide, silicon nitride, aluminum nitride, boron nitride, calcium carbonate, calcium hydroxide, calcium silicate, and combinations thereof. Among these, it is preferable to use titanium dioxide, which has a relatively high refractive index, from the viewpoint of light reflection.

[0057] [Second Embodiment] A method for manufacturing a light-emitting device according to the second embodiment will be described with reference to Figures 2A to 2D. In the second embodiment, the same reference numerals are used for components similar to those in the first embodiment, and their descriptions are omitted as appropriate.

[0058] In the second embodiment, as shown in Figure 2A, the light source 140 in the first intermediate 100 differs from the first embodiment in that it does not have a light-transmitting member. That is, the light-emitting surface 141 of the light source 140 is the element light-emitting surface 20A of the light-emitting element 20. The light-emitting surface 141 of the light source 140 is in contact with the first adhesive surface 231 of the second support substrate 230. In this specification, the element light-emitting surface 20A is referred to as the light-emitting surface 141 of the light source 140. Figure 2A shows the first intermediate 100 in the manufacturing method of the light-emitting device according to the second embodiment, and Figure 2B shows the second intermediate 200 in the manufacturing method of the light-emitting device according to the second embodiment.

[0059] As shown in Figure 2A, the light-emitting surface 141 of the light source 140 in the first intermediate 100 is brought into contact with the first adhesive surface 231 of the second support substrate 230.

[0060] In the second embodiment, the same material as that used for the translucent member 30 in the first embodiment can be used for the second support substrate 230. The second support substrate 230 includes, for example, a phosphor. The first adhesive surface 231 of the second support substrate 230 is the surface of a translucent adhesive, such as a silicone resin, placed on the second support substrate 230. Methods for applying the adhesive include potting, various printing methods, spin coating, and other methods known in the art.

[0061] With the light-emitting surface 141 of the first intermediate 100 in contact with the first adhesive surface 231 of the second support substrate 230, a laser beam L is irradiated from the first surface 11 side of the first support substrate 10 of the first intermediate 100, similar to the first embodiment, to remove a portion of the third surface 53 side of the resin layer 50. In this embodiment, a laser beam L is irradiated from the first surface 11 side of the first support substrate 10 of the first intermediate 100 to remove the release layer 51, which is a portion of the third surface 53 side of the resin layer 50.

[0062] After removing a portion of the resin layer 50, the first support substrate 10 is separated from the first intermediate 100 to obtain the second intermediate 200 shown in Figure 2B.

[0063] After the step of obtaining the second intermediate 200, the resin layer 50 is peeled off from the light source 140 together with the adhesive member 300, similar to the first embodiment. As a result, a third structure 201 is obtained in which a plurality of light sources 140 are arranged on the second support substrate 230, as shown in Figure 2C.

[0064] After the step of peeling off the resin layer 50, the third structure 201 is placed on the fourth support substrate 600 as shown in Figure 2D. The surface 232 of the second support substrate 230 opposite to the first adhesive surface 231 is brought into contact with the third adhesive surface 601 of the fourth support substrate 600. The fourth support substrate 600 is, for example, a dicing tape.

[0065] After placing the third structure 201 on the fourth support substrate 600, the second support substrate 230 is cut in the region between adjacent light-emitting elements 20, separating the second support substrate 230 into a plurality of translucent members 30. This yields a light source 40 including the translucent members 30 and the light-emitting elements 20. The surface 232 of the second support substrate 230 opposite the first adhesive surface 231 becomes the light-emitting surface 41 of the light source 40. As a method for cutting the second support substrate 230, known methods such as blade dicing and laser dicing can be used.

[0066] According to the manufacturing method of the light-emitting device of the second embodiment, a translucent member can be used as a support substrate, thus simplifying the manufacturing process. Furthermore, by placing the light-emitting element 20 on the second support substrate 230 and then separating the second support substrate 230 into a plurality of translucent members 30, the alignment of the translucent members 30 with respect to the light-emitting element 20 becomes easier compared to the case where the translucent members 30 are placed on the light-emitting element 20.

[0067] <hibi> Referring to Figures 3 and 4, an example of the detailed structure of the light-emitting element 20 according to the first and second embodiments will be described. Figure 3 is a schematic plan view of the light-emitting element 20. Figure 4 is a schematic cross-sectional view taken along line IV-IV in Figure 3. In the plan view of the light-emitting element 20 shown in Figure 3, two mutually orthogonal directions are denoted as the first direction X and the second direction Y. The direction perpendicular to the first direction X and the second direction Y is denoted as the third direction Z.

[0068] The light-emitting element 20 comprises a semiconductor structure 21. The semiconductor structure 21 includes a nitride semiconductor. In this specification, a nitride semiconductor is, for example, In x Al y Ga 1-x-y This definition includes semiconductors with all compositions obtained by varying the composition ratios x and y within the respective ranges in the chemical formula N(0≦x≦1,0≦y≦1,x+y≦1). Furthermore, nitride semiconductors are also defined as those that further include group V elements other than N (nitrogen) in the above chemical formula, and those that further include various elements added to control various physical properties such as conductivity.

[0069] As shown in Figure 4, the semiconductor structure 21 has an n-side semiconductor layer 711, a p-side semiconductor layer 713, and an active layer 712 located between the n-side semiconductor layer 711 and the p-side semiconductor layer 713 in the third direction Z. The active layer 712 is a light-emitting layer and has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The n-side semiconductor layer 711 has a semiconductor layer containing n-type impurities. The p-side semiconductor layer 713 has a semiconductor layer containing p-type impurities.

[0070] The n-side semiconductor layer 711 has a first surface 711d and a second surface 711c on which the active layer 712 and the p-side semiconductor layer 713 are arranged. The first surface 711d is the element light-emitting surface 20A of the light-emitting element 20. The second surface 711c is located on the opposite side of the first surface 711d in the third direction Z.

[0071] The n-side semiconductor layer 711 has a plurality of first exposed portions 711a that are exposed from the p-side semiconductor layer 713 and the active layer 712.

[0072] As shown in Figure 3, the n-side semiconductor layer 711 is formed in a rectangular shape in a plan view, having two first sides 711A extending in the first direction X and two second sides 711B extending in the second direction Y.

[0073] The n-side semiconductor layer 711 has a second exposed portion 711b in its outer periphery adjacent to the first side 711A and the second side 711B in a plan view, which is exposed from the p-side semiconductor layer 713 and the active layer 712. The second exposed portion 711b is continuous along the first side 711A and the second side 711B. In a plan view, the second exposed portion 711b has a region that extends in the direction of the p-side semiconductor layer 713 and the active layer 712, and the third n-side opening 723 of the first insulating film 720 and the fourth n-side opening 733 of the second insulating film 730, which will be described later, are located in this extended region.

[0074] As shown in Figure 4, the first exposed portion 711a and the second exposed portion 711b are located on the opposite side of the first surface 711d in the third direction Z.

[0075] The light-emitting element 20 further comprises a first insulating film 720, a second insulating film 730, and a first conductive layer 741.

[0076] The first insulating film 720 continuously covers the p-side semiconductor layer 713, the active layer 712, the first exposed portion 711a, and the second exposed portion 711b. The first insulating film 720 has a plurality of first p-side openings 721 located in the region facing the p-side semiconductor layer 713. The first insulating film 720 covers the side surface of the n-side semiconductor layer 711 that is continuous between the active layer 712 and the first exposed portion 711a, and the side surface that is continuous between the active layer 712 and the second exposed portion 711b. The first insulating film 720 has a plurality of first n-side openings 722 located in the region facing the first exposed portion 711a, and a plurality of third n-side openings 723 located in the region facing the second exposed portion 711b.

[0077] The first insulating film 720 is, for example, a film containing silicon oxide or silicon nitride. The first insulating film 720 may be a single-layer structure or a laminated structure in which multiple insulating layers are stacked.

[0078] The first conductive layer 741 is arranged to cover a portion of the first insulating film 720 in the region facing the p-side semiconductor layer 713. The first conductive layer 741 is electrically connected to the p-side semiconductor layer 713 at a plurality of first p-side openings 721 of the first insulating film 720. The first conductive layer 741 functions as a reflective layer that reflects light radiated from the active layer 712 toward the p-side semiconductor layer 713 toward the first surface 711d. It is preferable to use a metallic material with high reflectivity to light emitted by the active layer 712 as the material for the first conductive layer 741. For example, a metal containing Ag or Al can be used as the metallic material for the first conductive layer 741.

[0079] The light-emitting element 20 may further include a second conductive layer 743 disposed between the p-side semiconductor layer 713 and the first insulating film 720. The second conductive layer 743 is in contact with the surface 713a of the p-side semiconductor layer 713 that is opposite to the active layer 712. A plurality of first p-side openings 721 are arranged in a region facing the second conductive layer 743, and the first conductive layer 741 is in contact with the second conductive layer 743 at the plurality of first p-side openings 721. The first conductive layer 741 is electrically connected to the p-side semiconductor layer 713 via the second conductive layer 743 at the plurality of first p-side openings 721.

[0080] By arranging the second conductive layer 743 between the p-side semiconductor layer 713 and the first insulating film 720, the current from the first conductive layer 741 can be diffused and supplied to the p-side semiconductor layer 713 in the planar direction. This reduces the bias in the light emission distribution. It is preferable to use a material for the second conductive layer 743 that has the function of diffusing the current from the first conductive layer 741. For example, ITO (Indium Tin Oxide), ZnO (Zinc Oxide), and In2O3 (Indium Oxide) can be used as the material for the second conductive layer 743.

[0081] The second insulating film 730 continuously covers the first conductive layer 741 and the first insulating film 720. The second insulating film 730 has a second p-side opening 731, a plurality of second n-side openings 732, and a plurality of fourth n-side openings 733. The second insulating film 730 is, for example, a film containing silicon oxide or silicon nitride. The second insulating film 730 may be a single-layer structure or a laminated structure in which a plurality of insulating layers are stacked.

[0082] In the example shown in Figure 3, the first exposed portion 711a, the first n-side opening 722, and the second n-side opening 732 are represented by dashed circles. In a plan view, the second n-side opening 732 is located inside the first exposed portion 711a, and the first n-side opening 722 is located inside the second n-side opening 732. The first n-side opening 722 and the second n-side opening 732 may coincide in a plan view.

[0083] Furthermore, in Figure 3, the fourth n-side opening 733 and the third n-side opening 723 located in the second exposed portion 711b are represented by overlapping dashed circles. Note that the plan view shapes of the first exposed portion 711a, the first n-side opening 722, the second n-side opening 732, the fourth n-side opening 733, and the third n-side opening 723 are not limited to circles, but may also be elliptical, quadrilateral, or polygons with five or more sides.

[0084] The light-emitting element 20 includes the positive electrode 22p and the negative electrode 22n described above.

[0085] As shown in Figure 4, the positive electrode 22p is positioned to cover a portion of the second insulating film 730 in the region facing the p-side semiconductor layer 713. The positive electrode 22p is in contact with the first conductive layer 741 at the second p-side opening 731 of the second insulating film 730 and is electrically connected to the first conductive layer 741. In the example shown in Figure 3, the positive electrode 22p is formed in a rectangular shape extending in the first direction X.

[0086] In the region facing the p-side semiconductor layer 713, the second insulating film 730 is located between the first conductive layer 741 and the negative electrode 22n. The negative electrode 22n is in contact with the n-side semiconductor layer 711 at the first n-side opening 722 of the first insulating film 720 and the second n-side opening 732 of the second insulating film 730, and is electrically connected to the n-side semiconductor layer 711. Furthermore, the negative electrode 22n is in contact with the n-side semiconductor layer 711 at the third n-side opening 723 of the first insulating film 720 and the fourth n-side opening 733 of the second insulating film 730, and is electrically connected to the n-side semiconductor layer 711.

[0087] In the example shown in Figure 3, the negative electrode 22n is positioned to surround the positive electrode 22p in a plan view. In a plan view, the area of ​​the negative electrode 22n is larger than the area of ​​the positive electrode 22p.

[0088] As the material for the positive electrode 22p and the negative electrode 22n, for example, Au, Ag, Al, Ni, Rh, Cu, Ti, Pt, Pd, Mo, Cr, W, or alloys mainly composed of these metals can be used. The positive electrode 22p and the negative electrode 22n may each have a single-layer structure or a laminated structure in which multiple metal layers are stacked. As mentioned above, it is preferable that the outermost surfaces of the positive electrode 22p and the negative electrode 22n, which are part of the electrode surface 42 of the light source, contain Au. In this specification, the light source 40 and the light source 140 are collectively referred to as the light source.

[0089] In the cross-sectional view shown in Figure 4, the positions of the outermost surface of the positive electrode 22p and the outermost surface of the negative electrode 22n in the third direction Z are approximately the same. In other words, in the cross-sectional view, the shortest distance between the element light-emitting surface 20A and the outermost surface of the positive electrode 22p is approximately the same as the shortest distance between the element light-emitting surface 20A and the outermost surface of the negative electrode 22n. This reduces the difference between the distance between the laser light source and the outermost surface of the positive electrode 22p and the distance between the laser light source and the outermost surface of the negative electrode 22n during the laser light irradiation process described above. As a result, the adhesion force between the outermost surface of the positive electrode 22p and the resin layer 50 on the electrode surface 42 of the light source, and the adhesion force between the outermost surface of the negative electrode 22n and the resin layer 50 on the electrode surface 42 of the light source can be similarly reduced.

[0090] As shown in Figure 5, when the resin layer 50's adhesion to the electrode surface 42 of the light source is reduced by irradiation with laser light L, it may have a peeled portion 50A, where a part of the outer edge of the resin layer 50 is peeled away from the electrode surface 42 of the light source. In Figure 5, the peeled portion 50A is shown with shading. The area of ​​the peeled portion 50A preferably occupies 10% or more of the area of ​​the electrode surface 42 of the light source, and more preferably occupies 20% or more. In this way, by having a peeled portion 50A in the resin layer 50, the resin layer 50 can be easily peeled away from the electrode surface 42 of the light source, starting from the peeled portion 50A. Note that the resin layer 50 does not necessarily have to have a peeled portion 50A.

[0091] Figure 6 is a schematic plan view of the resin layer 50 that has been peeled off together with the adhesive member 300 from the light source including the light-emitting element 20 shown in Figure 3 by the process described above.

[0092] The peeled resin layer 50 is attached to the adhesive member 300. Figure 6 shows the surface of the peeled resin layer 50 that was in contact with the electrode surface 42 of the light source. In Figure 6, the traces of the shapes of the positive electrode 22p and the negative electrode 22n are shown by dashed lines. In this way, the traces of the shapes of the positive electrode 22p and the negative electrode 22n shown in Figure 3 are transferred and remain on the surface of the peeled resin layer 50 that was in contact with the electrode surface 42 of the light source. In other words, the resin layer 50 can be peeled off from the electrode surface 42 of the light source while maintaining its shape as a film-like member corresponding to the electrode surface 42 of the light source. In this way, by peeling the resin layer 50 off from the electrode surface 42 of the light source while maintaining its shape as a film-like member corresponding to the electrode surface 42 of the light source, the amount of remaining resin layer 50 on the electrode surface 42 of the light source can be reduced compared to removing the resin layer 50 by etching such as RIE.

[0093] Embodiments of this disclosure may include the following methods for manufacturing a light-emitting device.

[0094] [Section 1] A step of preparing a first intermediate having a first support substrate having a first surface and a second surface located opposite to the first surface and being light-transmitting; a resin layer having a third surface in contact with the second surface and a fourth surface located opposite to the third surface; and a light source having an electrode surface in contact with the fourth surface and a light-emitting surface located opposite to the electrode surface. A step of preparing a second support substrate having a first adhesive surface, The process involves irradiating the first intermediate with laser light from the first surface side, while the light-emitting surface of the first intermediate and the first adhesive surface of the second support substrate are in contact, to remove a portion of the third surface side of the resin layer. A step of separating the first support substrate from the first intermediate and obtaining a second intermediate in which the resin layer and the light source are supported by the second support substrate, A step of covering the resin layer in the second intermediate with an adhesive member so as to be in contact with the resin layer, A step of peeling the resin layer from the electrode surface together with the adhesive member, A method for manufacturing a light-emitting device, comprising the above. [Section 2] The method for manufacturing a light-emitting apparatus according to item 1, wherein the outermost surface of the electrode surface contains Au. [Section 3] A method for manufacturing a light-emitting device according to claim 1 or 2, wherein in the step of preparing the first intermediate, the light source is a plurality of light sources, and the resin layer is a plurality of resin layers, each of which is arranged in pairs with the plurality of light sources. [Section 4] A method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein in the step of preparing the first intermediate, the light source comprises a light-emitting element including the electrode surface and a light-transmitting member including the light-emitting surface. [Section 5] A method for manufacturing a light-emitting apparatus according to item 4, wherein, in the step of preparing the first intermediate, the light-emitting surface encloses the electrode surface when viewed from the first support substrate side. [Section 6] The method for manufacturing a light-emitting device according to item 4 or 5, wherein the light-transmitting member includes a phosphor. [Section 7] In the step of preparing the first intermediate, the resin layer has a release layer including the third surface and a light source support layer including the fourth surface. The method for manufacturing a light-emitting device according to any one of claims 1 to 6, wherein the step of removing the portion of the resin layer includes the step of removing the release layer. [Section 8] The method for manufacturing a light-emitting device according to any one of claims 1 to 7, wherein the step of removing the portion of the resin layer includes a step of reducing the adhesion between the resin layer and the electrode surface by irradiation with laser light. [Section 9] After the step of peeling off the resin layer, the step of separating the light source from the second support substrate, The process of placing the light source on the mounting substrate, A method for manufacturing a light-emitting device according to any one of items 1 to 8, further comprising the above.

[0095] The embodiments of this disclosure have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. All forms that a person skilled in the art can implement by appropriately modifying the design based on the embodiments described above in this disclosure also fall within the scope of this disclosure, insofar as they encompass the gist of this disclosure. Furthermore, within the scope of the idea of ​​this disclosure, a person skilled in the art can conceive of various modifications and variations, and these modifications and variations also fall within the scope of this disclosure. [Explanation of symbols]

[0096] 1...Light-emitting device, 10...First support substrate, 11...First surface, 12...Second surface, 20...Light-emitting element, 20A...Element light-emitting surface, 21...Semiconductor structure, 22...Electrode, 22p...Positive electrode, 22n...Negative electrode, 30...Translucent member, 40...Light source, 41...Light-emitting surface, 42...Electrode surface, 50...Resin layer, 51...Release layer, 52...Light source support layer, 53...Third surface, 54...Fourth surface, 100...First intermediate, 101...First structure, 102... Second structure, 110...element substrate, 120...second support substrate, 121...first adhesive surface, 130...third support substrate, 131...second adhesive surface, 140...light source, 200...second intermediate, 201...third structure, 230...second support substrate, 231...first adhesive surface, 300...adhesive member, 400...mounting substrate, 401...base material part, 402p...positive wiring part, 402n...negative wiring part, 450...joining member, 500...light reflective member

Claims

1. A step of preparing a first intermediate having a first support substrate having a first surface and a second surface located opposite to the first surface and being light-transmitting; a resin layer having a third surface in contact with the second surface and a fourth surface located opposite to the third surface; and a light source having an electrode surface in contact with the fourth surface and a light-emitting surface located opposite to the electrode surface. A step of preparing a second support substrate having a first adhesive surface, With the light-emitting surface of the first intermediate and the first adhesive surface of the second support substrate in contact, a laser beam is irradiated from the first surface side of the first intermediate to remove a portion of the third surface side of the resin layer; A step of separating the first support substrate from the first intermediate to obtain a second intermediate in which the resin layer and the light source are supported by the second support substrate, A step of covering the resin layer in the second intermediate with an adhesive member so as to be in contact with the resin layer, A step of peeling the resin layer from the electrode surface together with the adhesive member, A method for manufacturing a light-emitting device, comprising the above.

2. The method for manufacturing a light-emitting device according to claim 1, wherein the outermost surface of the electrode surface contains Au.

3. A method for manufacturing a light-emitting device according to claim 1 or 2, wherein in the step of preparing the first intermediate, the light source is a plurality of light sources, and the resin layer is a plurality of resin layers, each of which is arranged in pairs with the plurality of light sources.

4. A method for manufacturing a light-emitting device according to claim 1 or 2, wherein in the step of preparing the first intermediate, the light source comprises a light-emitting element including the electrode surface and a light-transmitting member including the light-emitting surface.

5. The method for manufacturing a light-emitting device according to claim 4, wherein, in the step of preparing the first intermediate, the light-emitting surface encloses the electrode surface when viewed from the first support substrate side.

6. The method for manufacturing a light-emitting device according to claim 4, wherein the light-transmitting member includes a phosphor.

7. In the step of preparing the first intermediate, the resin layer has a release layer including the third surface and a light source support layer including the fourth surface. The method for manufacturing a light-emitting device according to claim 1 or 2, wherein the step of removing the portion of the resin layer includes the step of removing the release layer.

8. The method for manufacturing a light-emitting device according to claim 1 or 2, wherein the step of removing the portion of the resin layer includes a step of reducing the adhesion between the resin layer and the electrode surface by irradiation with laser light.

9. After the step of peeling off the resin layer, the step of separating the light source from the second support substrate, The process of placing the light source on the mounting substrate, A method for manufacturing a light-emitting device according to claim 1 or 2, further comprising:

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