Controlled atmospheric chamber with a novel load / unload configuration

Abstract

This disclosure describes a system and method for an annealing chamber designed to reduce the ingress of oxygen from the surrounding air during wafer loading and unloading. [Solution] The wafer annealing chamber has auxiliary ports perpendicular to the multiple discharge ports. When the loading door is open, the multiple discharge ports are closed, and a pressure zone is created in the throat of the annealing chamber near the auxiliary ports.

Description

Technical Field

[0001] Cross - reference to Related Applications

[0001] This application claims the priority and benefit of U.S. Provisional Application No. 63 / 728959, filed on December 6, 2024, with the title "CONTROLLED ATMOSPHERE CHAMBER WITH NOVEL ARCHITECTURE FOR LOAD / UNLOAD", which is hereby incorporated herein by reference in its entirety.

Background Art

[0002]

[0002] The limitations and drawbacks of conventional methods and systems for laser annealing will become apparent to those skilled in the art through a comparison of such techniques with the methods and system configurations of the present disclosure described in the remainder of this disclosure with reference to the drawings.

Summary of the Invention

[0003]

[0003] A method for designing a controlled atmosphere chamber, substantially illustrated and / or described in relation to at least one of the drawings, is more fully defined in the claims.

Brief Description of the Drawings

[0004] [Figure 1] FIG. 1 shows an example of an annealing chamber according to various exemplary implementations of this disclosure. [Figure 2] FIG. 2 shows an example of gas flow when the chamber door is closed according to various exemplary implementations of this disclosure. [Figure 3] FIG. 3 shows an example of gas flow when the chamber door is open according to various exemplary implementations of this disclosure.

Modes for Carrying Out the Invention

[0005]

[0008] The following discussion provides various examples of annealing chambers. Such examples are not limiting, and the scope of the attached claims should not be limited to the specific examples disclosed. In the following discussion, the terms “example” and “e.g.” are not limiting.

[0006]

[0009] The drawings illustrate the configuration in a general style, and to avoid unnecessarily obscuring this disclosure, well-known features and technical descriptions and details may be omitted. Furthermore, the components depicted in the drawings are not necessarily drawn to scale. For example, the dimensions of some components in the drawings are made larger than those of others to facilitate understanding of the examples considered in this disclosure. The same reference numeral in various drawings refers to the same component.

[0007]

[0010] The term "or" means any one or more items in the list connected by "or". For example, "x or y" means any element of the 3-element set {(x), (y), (x,y)}. Another example is "x, y, or z" meaning any element of the 7-element set {(x), (y), (z), (x,y), (x,z), (y,z), (x,y,z)}.

[0008]

[0011] The terms “comprise,” “comprising,” “includes,” and / or “including” are “open-ended” terms that specify the existence of the stated configuration but do not exclude the existence or addition of one or more other configurations.

[0009]

[0012] Here, terms such as "first," "second," etc., may be used to describe various components, and these terms should not limit those components. These terms are simply used to distinguish one component from another. For example, the first component considered in this disclosure may be named the second component without deviating from the teachings of this disclosure.

[0010]

[0013] Unless otherwise specified, the term “combined” can be used to describe two components that are in direct contact with each other, or that two components are indirectly connected by one or more other components. For example, when component A is combined with component B, component A may be in direct contact with component B, or it may be indirectly connected to component B by an intervening component C. Similarly, the terms “over” or “on” can be used to describe two components that are in direct contact with each other, or that two components are indirectly connected by one or more other components.

[0011]

[0014] Typical laser annealing chambers often face the problem of oxygen from the surrounding air entering the laser processing chamber during wafer loading and unloading. This contamination allows debris to accumulate on the wafer, negatively impacting the annealing process. Load lock hardware and control can mitigate airflow; however, their cost, complexity, and maintenance requirements make this difficult to implement.

[0012]

[0015] Figure 1 shows an exemplary annealing chamber in accordance with various examples of implementation of this disclosure. The chamber design incorporates several features aimed at improving wafer processing efficiency, reducing oxygen intrusion, and enhancing the removal of particulate matter.

[0013]

[0016] The wafer annealing chamber 101 includes a chamber door 103, which opens an auxiliary port 105 located near an extended throat 105. Unlike typical chambers where the wafer is positioned near the loading port, the disclosed chamber 101 features an extended throat 105, which is longer on the loading side than on the other side. This extended throat 105 is designed to maintain a pressure boundary even when the chamber is open for wafer loading and unloading, thereby maintaining an inert environment inside the chamber.

[0014]

[0017] Figure 2 shows an example of gas flow within the chamber when the door is closed, according to various implementations of this disclosure.

[0015]

[0018] A gas intake port 203 (e.g., having a nozzle-shaped hole) can be positioned above the surface of the target wafer 201 to create a laminar flow across the wafer 201. An exhaust port 205 on the opposite side is open to allow for effective debris removal. The exhaust port 205 is typically larger than the intake port 203.

[0016]

[0019] During laser processing, the chamber door 207 remains closed, and the laminar gas flow is maintained across the wafer 201 and exits through the exhaust port 205. The chamber door is oriented perpendicular to the laminar gas flow to minimize disruption of flow dynamics.

[0017]

[0020] In the exemplified annealing process, for example, nickel and silicon carbide may be heated to form nickel silicide. By-products such as vaporized carbon, excess nickel, and silicon may coalesce into fine particles ranging from 0.01 μm to 1.0 μm. These fine particles can be carried over long distances by a layered crossflow of gas, which can have a velocity of 0.4 to 1.2 meters per second. Some of the fine particles may accumulate on the wafer surface, chamber walls, discharge pipes, and filters. However, this design can minimize their accumulation through optimized flow dynamics.

[0018]

[0021] Figure 3 shows an example of gas flow when the chamber door is open, according to various implementations of this disclosure.

[0019]

[0022] The chamber door 307 opens to a narrow auxiliary port, which allows the chamber to maintain positive pressure 311, reduces air exchange, and facilitates the preparation of the chamber for subsequent wafers. A continuous flow of nitrogen gas minimizes oxygen intrusion. The auxiliary port can be, for example, a slot shape with a height of less than 20 mm.

[0020]

[0023] The design of the extended throat 105 pushes the oxygen diffusion zone away from the main chamber. The reduced loading port, sized for wafer and fork access, combined with the extended throat 105, minimizes air exchange and maintains an inert environment in the chamber. The dimensions of the throat can be, for example, greater than 200 mm in width, less than 20 mm in height, and greater than 20 mm in depth, creating a high-pressure zone 311 just inside the opening that prevents debris from moving into the interior. A standby gas flow of, for example, 5-10 liters per minute through this auxiliary port can create a positive-pressure environment.

[0021]

[0024] During loading and unloading, the gas flow velocity 303 over the wafer 201 may increase, and the exhaust port 305 may be closed to purge debris and prevent it from accumulating on the target 201. The high-speed flow can exit through the port 307 of the open chamber door, thus maintaining positive pressure and minimizing oxygen intrusion. An additional purge gas port may create a high-pressure zone 307 in the extended throat 309, further enhancing oxygen exclusion.

[0022]

[0025] Further flow enhancements may include altering the gas and wafer surface temperatures and using active gas chemicals such as ammonia, thereby facilitating carbon removal and the transport of post-reaction residues. Cooling the gas can optimize debris transport. Maintaining precise pressure control can provide consistent chamber conditions for high-throughput processing.

[0023]

[0026] While the Method and / or System have been described with reference to specific implementations, it will be understood by those skilled in the art that various modifications and substitutions are possible without exceeding the scope of the Method and / or System. Furthermore, many modifications can be made to the teachings of this disclosure to suit specific circumstances and materials without exceeding their scope. Thus, it is intended that the Method and / or System is not limited to the specific implementation disclosed, but rather includes all implementations within the scope of the appended claims.

Claims

1. A process for creating a laminar flow of gas across a semiconductor wafer during laser annealing in a chamber, wherein the gas exits the chamber through a plurality of exhaust ports; A step of closing the plurality of discharge ports while the door of the chamber is open, The door of the chamber opens the auxiliary port, The auxiliary port is positioned perpendicular to the plurality of discharge ports. The width of the auxiliary port is greater than the height of the auxiliary port. The closing process, The process of increasing the gas flow to create a pressure zone in the throat near the auxiliary port. A method that includes this.

2. A method according to claim 1, wherein the pressure zone reduces the intrusion of oxygen.

3. A method according to claim 1, wherein the chamber includes a plurality of intake ports.

4. A method according to claim 1, wherein the laminar flow velocity is between 0.4 and 1.2 meters per second.

5. A method according to claim 1, comprising the steps of loading and / or unloading the semiconductor wafer while the door of the chamber is open.

6. A method according to claim 1, wherein the height of the auxiliary port is less than 20 mm.

7. A method according to claim 1, wherein the gas comprises ammonia.

8. A method according to claim 1, comprising the step of cooling the gas.

9. A method according to claim 1, wherein the standby gas flow through the auxiliary port is 5 to 10 liters per minute.

10. A method according to claim 1, wherein the pressure in the pressure zone is determined according to the height of the door of the chamber.

11. A system including a chamber, The chamber includes a throat, a door, a target area, and a plurality of discharge ports. During the laser annealing process, the plurality of exhaust ports are opened, and the chamber is configured to create a laminar flow of gas across the target region. While the door is open, the multiple discharge ports are closed, increasing the gas flow, and the chamber is configured to create a pressure zone in the throat of the chamber. The door of the chamber opens the auxiliary port, The auxiliary port is positioned perpendicular to the plurality of discharge ports. The width of the auxiliary port is greater than the height of the auxiliary port. system.

12. The system according to claim 11, wherein the pressure zone reduces the intrusion of oxygen.

13. The system according to claim 11, wherein the chamber includes a plurality of intake ports.

14. The system according to claim 11, wherein the laminar flow velocity is between 0.4 and 1.2 meters per second.

15. A system according to claim 11, configured to load and / or unload semiconductor wafers while the door of the chamber is open.

16. The system according to claim 11, wherein the height of the auxiliary port is less than 20 mm.

17. The system according to claim 11, wherein the gas comprises ammonia.

18. The system according to claim 11, wherein the chamber is configured to cool the gas.

19. The system according to claim 11, wherein the standby gas flow through the auxiliary port is 5 to 10 liters per minute.

20. The system according to claim 11, wherein the pressure in the pressure zone is determined according to the height of the door.

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