Substrate processing apparatus and substrate processing method

Abstract

The substrate processing using processing gas is appropriately controlled within the substrate surface. [Solution] A substrate processing apparatus for processing a substrate, comprising: a chamber; a substrate support portion disposed inside the chamber and supporting the substrate; and a gas supply portion for supplying processing gas to the inside of the chamber, wherein the gas supply portion comprises: a first gas supply passage for supplying the processing gas to at least the central part of the substrate supported by the substrate support portion; a second gas supply passage for supplying the processing gas to at least the peripheral part of the substrate supported by the substrate support portion; and a flow velocity control portion provided in at least one of the first gas supply passage and the second gas supply passage for controlling the flow velocity of the processing gas.

Description

Technical Field

[0006]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a method for selectively etching a silicon oxide film on a substrate having a silicon nitride film and a silicon oxide film on its surface. In this etching method, a processing gas containing hydrogen fluoride gas and ammonia gas is intermittently (pulsed) supplied to the substrate in a vacuum atmosphere.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure appropriately controls substrate processing using a processing gas within the substrate surface.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, including a chamber, a substrate support portion disposed inside the chamber for supporting the substrate, and a gas supply portion for supplying a processing gas inside the chamber. The gas supply portion includes a first gas supply path for supplying the processing gas to at least a central portion of the substrate supported by the substrate support portion, a second gas supply path for supplying the processing gas to at least a peripheral portion of the substrate supported by the substrate support portion, and a flow rate control portion provided in at least one of the first gas supply path and the second gas supply path for controlling the flow rate of the processing gas.

Effects of the Invention

[0007] [Figure 1] This is an explanatory diagram showing an example configuration of a plasma processing system. [Figure 2] This is a cross-sectional view showing an example of the configuration of a plasma processing apparatus according to this embodiment. [Figure 3] This is an explanatory diagram showing a schematic configuration of the gas supply unit according to this embodiment. [Figure 4] This is an explanatory diagram showing the schematic configuration of the second flow controller. [Figure 5] This is an explanatory diagram showing the general configuration of a gas compressor. [Figure 6] This is a timing chart diagram of the plasma processing according to this embodiment. [Figure 7] This is a sequence chart diagram of the second additive gas supply system of the gas supply unit according to this embodiment. [Figure 8] This is a cross-sectional view showing an example of the configuration of a plasma processing apparatus according to another embodiment. [Figure 9] This is an explanatory diagram showing how the emission intensity of plasma is controlled. [Figure 10] This is an explanatory diagram showing an example of the amount of flow velocity control for added gas. [Figure 11] This is an explanatory diagram illustrating the effect of feedback control of the flow velocity of additive gas in a gas compressor. [Figure 12] This is a cross-sectional view showing an example of the configuration of a plasma processing apparatus according to another embodiment. [Figure 13] This is an explanatory diagram illustrating the schematic configuration of a gas supply unit according to another embodiment. [Figure 14] This is a cross-sectional view showing an example of the configuration of a plasma processing apparatus according to another embodiment. [Modes for carrying out the invention]

[0008] The substrate processing apparatus and substrate processing method according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] <Plasma Treatment System> Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron cyclotron resonance (ECR) plasma, a helicon wave excited plasma (HWP), or a surface wave plasma (SWP), etc. Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions implemented by the processing unit 2a1 described herein may be implemented in a circuit or processing circuitry, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), conventional circuitry, and / or a combination thereof, programmed to implement the functions described herein. A processor is considered a circuit or processing circuit, including transistors and other circuitry. A processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be stored in the memory unit 2a2 in advance, or it may be retrieved via a medium when needed. The retrieved program is stored in the memory unit 2a2 and read from the memory unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In the present disclosure, a circuit, unit, or means is hardware programmed to realize the described functions, or hardware configured to execute the functions. The hardware may be any hardware described in the present disclosure, or any hardware known as being programmed or configured to realize the described functions. When the hardware is a processor regarded as a type of circuit, the circuit, means, or unit is a combination of hardware and software used to constitute the hardware and / or the processor.

[0012] <Plasma Processing Apparatus> Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one process gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive member. The conductive member of the base 120 can function as a lower electrode. The electrostatic chuck 121 is disposed on the base 120. The electrostatic chuck 121 includes a ceramic member 121a and an electrostatic chuck electrode 121b disposed within the ceramic member 121a. Note that the electrostatic chuck electrode 121b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 121b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 121a has a central region 111a. In one embodiment, the ceramic member 121a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 121, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 121 and the annular insulating member. Also, at least one bias electrode electrically connected or coupled to the power supply 31 and / or the power supply 32 described later may be disposed within the ceramic member 121a. In this case, the at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 120 and the bias electrode within the ceramic member 121a may function as a plurality of lower electrodes. In one embodiment, a first voltage generation unit 32a that functions as a voltage pulse generation unit described later is electrically connected or coupled to the bias electrode within the ceramic member 121a, and a first RF generation unit 31a described later is electrically connected or coupled to the conductive member of the base 120. Also, the electrostatic chuck electrode 121b may function as a lower electrode. Accordingly, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 121, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 120a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 120a. In one embodiment, the flow path 120a is formed within the base 120, and one or more heaters are arranged within the ceramic member 121a of the electrostatic chuck 121. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has a plurality of gas supply ports, for example, two gas supply ports 130c, 130e, a plurality of gas diffusion chambers, for example, two gas diffusion chambers 131c, 131e, and a plurality of gas inlet ports 132c, 132e.

[0019] The first gas supply port 130c, the first gas diffusion chamber 131c, and the multiple first gas inlets 132c are provided in communication with each other. The first gas diffusion chamber 131c is provided inside the shower head 13. The first gas supply port 130c is provided on the upper surface of the first gas diffusion chamber 131c, and the multiple first gas inlets 132c are provided on the lower surface of the first gas diffusion chamber 131c. The multiple first gas inlets 132c are provided above the central part (center region) of the substrate W supported by the substrate support part 11. The processing gas supplied from the gas supply part 20 to the first gas supply port 130c is diffused in the first gas diffusion chamber 131c and introduced into the plasma processing space 10s from the multiple first gas inlets 132c, and supplied toward the central part of the substrate W supported by the substrate support part 11.

[0020] The second gas supply port 130e, the second gas diffusion chamber 131e, and the multiple second gas inlets 132e are provided in communication with each other. The second gas diffusion chamber 131e is provided inside the shower head 13. The second gas supply port 130e is provided on the upper surface of the second gas diffusion chamber 131e, and the multiple second gas inlets 132e are provided on the lower surface of the second gas diffusion chamber 131e. The multiple second gas inlets 132e are provided above the peripheral edge (edge ​​region) of the substrate W supported by the substrate support 11. The processing gas supplied from the gas supply unit 20 to the second gas supply port 130e is diffused in the second gas diffusion chamber 131e and introduced into the plasma processing space 10s from the multiple second gas inlets 132e, and supplied toward the peripheral edge of the substrate W supported by the substrate support 11.

[0021] The shower head 13 also includes at least one upper electrode.

[0022] The gas supply unit 20 supplies at least one processing gas to the shower head 13. The processing gas includes a main gas and an additive gas, which will be described later. Details of the configuration of the gas supply unit 20 will be described later.

[0023] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Thus, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0024] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0025] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. If the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0026] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0027] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has multiple cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, bursts of voltage pulses are repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangular, trapezoidal, triangular, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0028] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0029] <Gas Supply Department> Next, the configuration of the gas supply unit 20 described above will be explained. Figure 3 is an explanatory diagram showing a schematic of the configuration of the gas supply unit 20 according to this embodiment. The gas supply unit 20 mixes the main processing gas used for plasma processing (hereinafter referred to as "main gas") with other processing gases (hereinafter referred to as "additive gases") intended to assist the plasma processing (improve efficiency, etc.) and supplies them to the shower head 13. In the following explanation, the side of the main gas box 200 and additive gas box 300 described later in the direction of gas flow will be referred to as the primary side (upstream side), and the side of the shower head 13 (plasma processing chamber 10) in the direction of flow will be referred to as the secondary side (downstream side).

[0030] As shown in Figure 3, the gas supply unit 20 includes a main gas box 200, a flow controller 210, a splitter 220, a main gas flow path 230, a first main gas flow path 240 as a first gas supply path, and a second main gas flow path 250 as a second gas supply path.

[0031] The main gas box 200 has at least one, and in the illustrated example, three gas sources 201. Each gas source 201 stores the main gas and supplies it to the showerhead 13.

[0032] Multiple flow controllers 210 are provided, one for each of the three gas sources 201 in the main gas box 200; in the illustrated example, there are three. The flow controllers 210 control the flow rate of the main gas supplied from the gas sources 201. The configuration of the flow controllers 210 is arbitrary, but as an example, it has the same configuration as the second flow controller 340 described later.

[0033] The splitter 220 divides the main gas from the flow controller 210 at a desired flow rate ratio. Specifically, the splitter 220 branches the primary main gas flow path 230 into a secondary first main gas flow path 240 and a second main gas flow path 250. The configuration of the flow controller 210 is arbitrary, and a known splitter can be used.

[0034] The main gas box 200 and the splitter 220 are connected by a main gas flow path 230. Specifically, the main gas flow path 230 is connected to the gas source 201 and the flow controller 210, and further merges on the secondary side of the flow controller 210 before connecting to the splitter 220. The main gas flow path 230 is provided with a valve 231 on the primary side of the flow controller 210 and a valve 232 on the secondary side of the flow controller 210. By opening and closing valves 231 and 232, the flow of main gas in the main gas flow path 230 can be switched as desired.

[0035] The splitter 220 and the showerhead 13 are connected by a first main gas flow path 240 and a second main gas flow path 250. As described above, the main gas flow path 230 is branched into the first main gas flow path 240 and the second main gas flow path 250 by the splitter 220. The first main gas flow path 240 is connected to the first gas supply port 130c, and the second main gas flow path 250 is connected to the second gas supply port 130e. The first main gas flow path 240 is provided with a valve 241, which acts as the first valve. By opening and closing the valve 241, the flow of main gas in the first main gas flow path 240 can be switched at will. The second main gas flow path 250 is provided with a valve 251, which acts as the second valve. By opening and closing the valve 251, the flow of main gas in the second main gas flow path 250 can be switched at will.

[0036] In one embodiment, in the main gas supply system of the gas supply unit 20, different types of main gas are supplied from multiple gas sources 201 in the main gas box 200 to multiple main gas flow paths 230. These main gases are mixed after their flow rates are controlled by each flow controller 210. The mixed gas is then divided at a desired flow rate ratio by a splitter 220 and supplied to the gas supply ports 130c and 130e of the shower head 13.

[0037] Furthermore, the gas supply unit 20 includes an additive gas box 300, a first additive gas flow path 310 as a first gas supply path, a first flow rate controller 320, a second additive gas flow path 330 as a second gas supply path, a second flow rate controller 340, and a gas compressor 350 as a flow velocity control unit.

[0038] The additive gas box 300 has at least one gas source 301, one in the illustrated example. The gas source 301 stores the additive gas and supplies it to the shower head 13.

[0039] The first additive gas flow path 310 is connected at one end to the additive gas box 300 and at the other end to the primary side of the valve 241 in the first main gas flow path 240.

[0040] A first flow controller 320 is provided in the first additive gas flow path 310. The first flow controller 320 controls the flow rate of the additive gas supplied from the gas source 301. The configuration of the first flow controller 320 is arbitrary, but as an example, it has the same configuration as the second flow controller 340, which will be described later.

[0041] In the first additive gas flow path 310, a valve 311 is provided on the primary side of the first flow controller 320, and a valve 312, which acts as the first valve, is provided on the secondary side of the first flow controller 320. By opening and closing valves 311 and 312, the flow of the additive gas in the first additive gas flow path 310 can be arbitrarily switched.

[0042] In one embodiment, in the first additive gas supply system of the gas supply unit 20, an additive gas is supplied from a gas source 301 in the additive gas box 300 to a first additive gas flow path 310. The flow rate of the additive gas is controlled by a first flow controller 320. The additive gas is then supplied to the first main gas flow path 240.

[0043] The second additive gas passage 330 has one end connected to the additive gas box 300 and the other end connected to the primary side of the valve 251 in the second main gas passage 250.

[0044] The second additive gas flow path 330 is equipped with a second flow controller 340 on the primary side and a gas compressor 350 on the secondary side.

[0045] The second flow controller 340 controls the flow rate of the additive gas supplied from the gas source 301. The configuration of the second flow controller 340 is arbitrary, but as an example, as shown in Figure 4, the second flow controller 340 has an internal supply pipe 341, a control valve 342, a control circuit 343, an orifice 344, a pressure sensor 345, and a temperature sensor 346. Both ends of the internal supply pipe 341 are connected to the second additive gas flow path 330. In the internal supply pipe 341, the control valve 342 is provided on the primary side and the orifice 344 is provided on the secondary side.

[0046] The control valve 342 controls the flow rate of the additive gas flowing through the internal supply pipe 341 by controlling its opening degree via the control circuit 343. Specifically, the control circuit 343 controls the opening degree of the control valve 342 to adjust the internal pressure of the internal supply pipe 341, thereby controlling the flow rate of the additive gas flowing on the secondary side of the orifice 344 to be maintained at a desired value determined according to the plasma processing in the plasma processing chamber 10. Furthermore, the control valve 342 may also function as a flow rate modulation device that modulates or pulses the flow rate of the additive gas under the control of the control circuit 343.

[0047] The pressure sensor 345 measures the pressure inside the internal supply pipe 341 on the primary side of the orifice 344. The temperature sensor 346 also measures the temperature inside the internal supply pipe 341 on the primary side of the orifice 344.

[0048] As shown in Figure 3, the gas compressor 350 compresses the additive gas from the second flow controller 340. By compressing the additive gas, the gas compressor 350 controls the flow velocity of the additive gas so that it reaches a desired flow velocity determined according to the plasma treatment. The configuration of the gas compressor 350 is arbitrary, but a centrifugal compressor or a positive displacement compressor may be used.

[0049] As an example, a known centrifugal compressor can be used for the gas compressor 350. For example, the gas compressor 350 has an impeller (not shown). The gas compressor 350 can compress the additive gas by converting kinetic energy into pressure energy through the centrifugal force of the high-speed rotating impeller. In this case, the gas compressor 350 is easier to dynamically balance and vibrates less than a reciprocating compressor. Also, because the gas compressor 350 has no friction parts in the sliding components, it has fewer failures and a longer lifespan. Furthermore, the gas compressor 350 is suitable for high-speed rotation and can be directly connected to prime movers such as electric motors and steam turbines. In addition, because the gas compressor 350 can be made compact by rotating at high speed, it can have a small installation area and equipment costs can be reduced.

[0050] As an example, a known positive displacement compressor is used for the gas compressor 350. For example, as shown in Figure 5, the gas compressor 350 has a cylinder 351, a piston 352, an intake valve 353, and an exhaust valve 354. In Figure 5, the shaded area shows the additive gas in the cylinder 351. In the gas compressor 350, first, as shown in Figure 5(a), the intake valve 353 starts drawing the additive gas into the cylinder 351. Subsequently, as shown in Figure 5(b), the piston 352 is pulled back to draw the additive gas into the cylinder 351. As shown in Figure 5(c), once the drawing of the additive gas into the cylinder 351 is complete, the piston 352 is pushed to start compressing the additive gas. Then, as shown in Figure 5(d), once the compression of the additive gas is complete, the additive gas is discharged from the exhaust valve 354. At this time, the discharged additive gas is compressed to the desired pressure. In this case, a simple device configuration can be used for the gas compressor 350, and the device cost can be reduced.

[0051] As shown in Figure 3, the second additive gas flow path 330 is provided with a valve 331 on the primary side of the second flow controller 340, a valve 332 between the second flow controller 340 and the gas compressor 350, and a valve 333 as a second valve on the secondary side of the gas compressor 350. By opening and closing valves 331, 332, and 333, the flow of the additive gas in the second additive gas flow path 330 can be arbitrarily switched.

[0052] In one embodiment, in the second additive gas supply system of the gas supply unit 20, additive gas is supplied from the gas source 301 of the additive gas box 300 to the second additive gas flow path 330. The flow rate of the additive gas is controlled by the first flow controller 320. Furthermore, the additive gas is compressed by the gas compressor 350 and controlled to a desired flow velocity. This additive gas is then supplied to the second main gas flow path 250.

[0053] <Plasma treatment method> Next, we will describe plasma processing as substrate processing, performed using the plasma processing system configured as described above. In this embodiment, we will describe the case where etching is performed as the plasma processing. Figure 6 is a timing chart of the plasma processing according to this embodiment. Figure 7 is a sequence chart of the second additive gas supply system (second additive gas flow path 330) of the gas supply unit 20 according to this embodiment.

[0054] First, the substrate W is brought into the plasma processing chamber 10 and placed on the electrostatic chuck 121. Then, by applying a DC voltage to the electrostatic chuck electrode 121b of the electrostatic chuck 121, the substrate W is electrostatically attracted to and held by the electrostatic chuck 121 due to Coulomb force. At this time, the substrate W is adjusted to a desired temperature. After the substrate W is brought in, the inside of the plasma processing chamber 10 is depressurized to a desired vacuum level by the exhaust system 40.

[0055] Next, the gas supply unit 20 supplies processing gas (main gas and additive gas) to the plasma processing space 10s via the shower head 13. The first RF generation unit 31a of the power supply 31 supplies source RF power for plasma generation to the conductive member of the substrate support unit 11 and / or the conductive member of the shower head 13. The processing gas is then excited to generate plasma. At this time, the second RF generation unit 31b may supply bias RF power for ion pull-in. The generated plasma then performs plasma processing on the substrate W.

[0056] During this plasma processing, RF power is continuously supplied as shown in Figure 6. Note that the method of supplying RF power is not limited to this; for example, RF power may be supplied in pulses.

[0057] Furthermore, as shown in Figure 6, the main gas and additive gas, which are the processing gases, are supplied in a pulsed manner. That is, the supply (timing T2 in Figure 6) and stop (timing T1 in Figure 6) of the main gas and additive gas are repeatedly performed. Specifically, the opening and closing of valves 241, 251, 312, and 333 are repeatedly performed at the same timing, and the flow and closing of the main gas and additive gas are alternately repeated, thereby pulsed in the supply of the main gas and additive gas.

[0058] In this case, in the main gas supply system of the gas supply unit 20, the main gas supplied from the gas source 201 of the main gas box 200 is controlled by the flow controller 210, then split by the splitter 220 at a desired flow ratio, and supplied to the first main gas flow path 240 and the second main gas flow path 250.

[0059] Furthermore, in the first additive gas supply system of the gas supply unit 20, the additive gas supplied from the gas source 301 of the additive gas box 300 to the first additive gas flow path 310 is supplied to the first main gas flow path 240 after its flow rate is controlled by the first flow controller 320.

[0060] Furthermore, in the second additive gas supply system of the gas supply unit 20, the additive gas supplied from the gas source 301 of the additive gas box 300 to the second additive gas flow path 330 has its flow rate controlled by the first flow controller 320, is further compressed by the gas compressor 350 to a desired flow velocity, and is supplied to the second main gas flow path 250.

[0061] In the first main gas flow path 240, the main gas flowing through the first main gas flow path 240 and the additive gas supplied from the first additive gas flow path 310 are mixed. The mixed processing gas (main gas and additive gas) is introduced into the plasma processing space 10s through the first gas inlet 132c via the first gas supply port 130c and the first gas diffusion chamber 131c of the shower head 13, and supplied toward the central part of the substrate W supported by the substrate support portion 11.

[0062] In the second main gas flow path 250, the main gas flowing through the second main gas flow path 250 and the additive gas supplied from the second additive gas flow path 330 are mixed. The mixed processing gas (main gas and additive gas) is introduced into the plasma processing space 10s through the second gas inlet 132e via the second gas supply port 130e and the second gas diffusion chamber 131e of the shower head 13, and supplied toward the peripheral edge of the substrate W supported by the substrate support portion 11.

[0063] As described above, by opening and closing valves 241, 251, 312, and 333 at the same time, the supply and cessation of processing gas to the central and peripheral parts of the substrate W are performed at the same time.

[0064] In this case, a desired flow rate of processing gas is supplied to the central and peripheral parts of the substrate W. In addition, an additive gas is compressed by a gas compressor 350 in the second main gas flow path 250, and the flow velocity of the additive gas is controlled to increase. As a result, the flow velocity of the processing gas supplied to the peripheral part of the substrate W increases compared to the flow velocity of the processing gas supplied to the central part of the substrate W.

[0065] When the flow velocity of the processing gas supplied to the periphery of the substrate W increases, the shape of the plasma sheath at that periphery is adjusted, allowing for appropriate adjustment of the tilt angle of the ion incidence direction to the periphery. In other words, the linearity of the ions can be improved. As a result, plasma processing at the periphery of the substrate W can be performed appropriately, and the partial controllability of the plasma processing can be improved.

[0066] Here, in the second additive gas flow path 330, the additive gas is compressed by the gas compressor 350 and controlled to a desired flow velocity. The relationship between the timing of this additive gas compression and the timing of supplying the additive gas to the second main gas flow path 250 will be explained using Figure 7.

[0067] First, at timing T1, when the supply of the additive gas described above is stopped, valve 332 is opened and valve 333 is closed (step St1 in Figure 7). Then, the additive gas is introduced from the first flow controller 320 into the gas compressor 350, and the gas compressor 350 compresses the additive gas (step St2 in Figure 7).

[0068] Next, at timing T2 for supplying the additive gas as described above, valve 332 is closed and valve 333 is opened (step St3 in Figure 7). Then, the additive gas, which has been compressed by the gas compressor 350 and whose flow velocity has been controlled, is supplied to the second main gas flow path 250. Whether or not to close valve 331 in step St3 may be determined depending on the type of gas compressor 350. For example, if a positive displacement compressor is used for the gas compressor 350, valve 331 may be closed in step St3, while if a centrifugal compressor is used for the gas compressor 350, valve 331 may be left open in step St3.

[0069] Then, steps St1 to St3 are repeated, along with the repeated stopping of the additive gas at timing T1 and supplying the additive gas at timing T2.

[0070] When terminating the plasma processing described above, first, the supply of source RF power from the first RF generation unit 31a and the supply of processing gas from the gas supply unit 20 are stopped. Also, if bias RF power was supplied during the plasma processing, the supply of said bias RF power is also stopped. Next, the adsorption and holding of the substrate W by the electrostatic chuck 121 is stopped.

[0071] Subsequently, the substrate W is removed from the plasma processing chamber 10, and the series of plasma processing treatments on the substrate W is completed.

[0072] In the semiconductor device manufacturing process, the controllability of plasma processing at the peripheral edge of the substrate, for example, at approximately 120mm to 145mm radially from the center of a 300mm diameter substrate W, affects the yield of the finished substrate. Therefore, it is necessary to appropriately control the processing gas supplied to the peripheral edge of the substrate.

[0073] Conventionally, plasma processing at the periphery of a substrate is controlled by distributing the processing gas supplied to the substrate to the central and peripheral parts and controlling the distribution of the processing gas supplied to the central and peripheral parts. However, depending on the distance between the showerhead and the substrate in the plasma processing chamber, a large amount of processing gas may be exhausted from the periphery of the substrate. In this case, the diffusion of the processing gas, flowing from the central to the peripheral part, becomes dominant on the substrate, and the effect of the processing gas distribution control described above decreases. As a result, it becomes impossible to properly control the processing supplied to the periphery of the substrate, and the controllability of plasma processing at that substrate decreases.

[0074] In this respect, according to this embodiment, since a gas compressor 350 is provided in the second additive gas flow path 330, the additive gas can be compressed and its flow velocity can be controlled to increase. As a result, the flow velocity of the processing gas supplied to the periphery of the substrate W can be increased compared to the flow velocity of the processing gas supplied to the central part of the substrate W. By appropriately controlling the flow velocity of the processing gas at the periphery of the substrate W in this way, the partial controllability of the plasma processing at the periphery can be improved. As a result, the line width (CD; Critical Dimension) of the pattern formed on the substrate W after etching can be appropriately controlled, and the yield of the product substrate can be improved.

[0075] Furthermore, by simply installing a gas compressor 350 in the second additive gas flow path 330, the partial controllability of the plasma processing at the peripheral portion described above can be improved, thus enabling appropriate plasma processing while keeping equipment costs down.

[0076] Furthermore, when a gas compressor 350 is provided in the second additive gas flow path 330, the flow rate of the additive gas is low, allowing for rapid control of the flow velocity of the additive gas. Consequently, it becomes possible to rapidly control the flow velocity of the processing gas at the periphery of the substrate W.

[0077] Furthermore, according to this embodiment, by controlling and physically increasing the flow velocity of the processing gas at the periphery of the substrate W, the physical collision energy with the substrate W can be increased, and particles and the like adhering to the substrate W can be removed. In other words, this embodiment can be applied to a substrate cleaning method such as NPPC (Non-plasma particle cleaning) to enjoy the effect of reducing particles and the like.

[0078] Furthermore, according to this embodiment, as shown in Figure 6, the main gas and additive gas, which are the processing gases, are supplied in a pulsed manner from the gas supply unit 20 to the shower head 13 (plasma processing chamber 10). In this case, the flow rates of the main gas and additive gas supplied to the substrate W can be appropriately controlled, thereby enabling appropriate control of the plasma processing. Also, even if it takes time to compress the additive gas with the gas compressor 350, the additive gas to be compressed by the gas compressor 350 can also be supplied in a pulsed manner in conjunction with the pulsed supply of the processing gas. Therefore, the flow rate of the processing gas supplied to the peripheral edge of the substrate W can be appropriately controlled, thereby improving the partial controllability of the plasma processing at the peripheral edge.

[0079] In this embodiment, the gas compressor 350 controls the flow rate of the additive gas, but it is also preferable to control the sum of the flow rates of the main gas and additive gas supplied from the gas supply unit 20 to the shower head 13 (plasma processing chamber 10).

[0080] <Feedback control method for processed gas flow rate> Next, a feedback control method for the flow velocity of the additive gas compressed by the gas compressor 350 in the plasma processing apparatus 1 of the above embodiment will be described.

[0081] For example, as shown in Figure 8, the plasma processing apparatus 1 is equipped with an optical measuring unit 400. The optical measuring unit 400 measures the emission intensity of the plasma generated inside the plasma processing chamber 10 (plasma processing space 10s). For example, an optical emission spectrometer (OES) can be used for the optical measuring unit 400. Alternatively, a known measuring device capable of detecting the gas composition of the plasma processing space 10s from the side wall 10a of the plasma processing chamber 10 may be used for the optical measuring unit 400.

[0082] First, the luminescence intensity of the plasma in the plasma processing space 10s is measured using the optical measurement unit 400. At this time, the luminescence intensity of the plasma is measured according to the type of processing gas. Figure 9(a) shows an example of the measurement results of the plasma luminescence intensity. Figure 9(a) shows the radial distribution of the plasma luminescence intensity, with the vertical axis representing the plasma luminescence intensity and the horizontal axis representing the radial position of the substrate W. In this example, the measured luminescence intensity at the periphery of the substrate W is shown as greater than the target luminescence intensity (Target in the graph) (solid line in the graph) or as less than the target luminescence intensity (dotted line in the graph).

[0083] The emission intensity of the plasma measured by the optical measurement unit 400 is output to the control unit 2. Based on the measured emission intensity of the plasma shown in Figure 9(a), the control unit 2 derives the flow velocity control amount of the additive gas compressed by the gas compressor 350 so that the emission intensity of the plasma at the periphery of the substrate W becomes the target emission intensity, as shown in Figure 9(b). Figure 10 shows an example of the flow velocity control amount of the additive gas. That is, the control unit 2 derives the flow velocity control amount of the additive gas at timing T2 when the additive gas is supplied. When the processing gas (main gas and additive gas) is supplied pulsed as in this embodiment, the flow velocity control amount of the additive gas is derived for each timing T2.

[0084] The control unit 2 controls the compression pressure of the additive gas in the gas compressor 350 based on the output flow rate control amount of the additive gas, thereby controlling the additive gas to a desired flow velocity.

[0085] Figure 11 is an explanatory diagram illustrating the effect of feedback control of the flow velocity of the additive gas in the gas compressor 350. The upper graph in Figure 11 shows the radial distribution of the etching rate of the substrate W, with the vertical axis representing the etching rate of the substrate W and the horizontal axis representing the radial position of the substrate W. The lower part of Figure 11 shows how the central (Ceter) and peripheral (Edge) parts of the substrate W are etched to form a pattern.

[0086] As shown in Figure 9(a), if the plasma emission intensity at the periphery of the substrate W deviates from the target emission intensity, the etching rate of the substrate W is not uniform in the radial direction, as shown in Figure 11(a). For example, if the etching rate at the periphery of the substrate W is greater than the target etching rate (Target in the upper graph) (solid line in the upper graph), the bottom of the etched portion at the periphery of the substrate W becomes deeper than the bottom of the central portion (thick solid line in the lower explanatory diagram). Also, for example, if the etching rate at the periphery of the substrate W is less than the target etching rate (dotted line in the upper graph), the bottom of the etched portion at the periphery of the substrate W becomes shallower than the bottom of the central portion (thick dotted line in the lower explanatory diagram). Thus, a difference occurs between the amount of etching in the central portion and the amount of etching in the periphery of the substrate W.

[0087] On the other hand, when the flow rate of the additive gas in the gas compressor 350 is feedback controlled, the emission intensity of the plasma at the periphery of the substrate W becomes the target emission intensity, as shown in Figure 9(b). In this case, as shown in Figure 11(b), the etching rate of the substrate W becomes uniform in the radial direction, and the etching amount at the center of the substrate W and the etching amount at the periphery can be made the same.

[0088] As described above, according to this embodiment, the flow rate of the additive gas compressed by the gas compressor 350 can be feedback-controlled based on the emission intensity of the plasma measured by the optical measuring unit 400. Therefore, the flow rate of the processing gas supplied to the peripheral edge of the substrate W can be appropriately controlled, and the partial controllability of the plasma processing at the peripheral edge can be improved.

[0089] Furthermore, in feedback control of the additive gas flow rate, the emission intensity of the plasma for one substrate W may be measured, and the flow rate of the additive gas supplied to the next substrate W may be controlled based on the measurement result. Alternatively, the emission intensity of the plasma at the time of the first supply of processing gas (timing T1) for one substrate W may be measured, and the flow rate of the second additive gas may be controlled based on the measurement result.

[0090] <Other Embodiments> In the plasma processing apparatus 1, the configuration of the gas supply unit 20 and the shower head 13 is not limited to the above embodiment.

[0091] In the above embodiment, the gas compressor 350 was provided in the second additive gas flow path 330, but it may also be provided in the first additive gas flow path 310. In this case, in the first additive gas flow path 310, the gas compressor 350 compresses the additive gas to control the flow velocity and supplies it to the first main gas flow path 240. This makes it possible to increase the flow velocity of the processing gas supplied to the central part of the substrate W compared to the peripheral part, and to increase the etching rate (amount of etching) in the central part of the substrate W.

[0092] Furthermore, gas compressors 350 may be provided in both the first additive gas channel 310 and the second additive gas channel 330. In this case, the flow velocity of the additive gas in the first additive gas channel 310 and the flow velocity of the additive gas in the second additive gas channel 330 can be selectively controlled according to the required etching rate within the substrate surface. For example, by compressing the additive gas in the first additive gas channel 310 to increase its flow velocity, the etching rate in the central part of the substrate W can be increased. Also, by compressing the additive gas in the second additive gas channel 330 to increase its flow velocity, the etching rate in the peripheral part of the substrate W can be increased.

[0093] Furthermore, a gas compressor 350 may be provided on the primary side of the valve 241 in the first main gas passage 240. In this case, the main gas in the first main gas passage 240 is compressed to increase the flow velocity, thereby increasing the etching rate of the central part of the substrate W. Alternatively, a gas compressor 350 may be provided on the primary side of the valve 251 in the second main gas passage 250. In this case, the main gas in the second main gas passage 250 is compressed to increase the flow velocity, thereby increasing the etching rate of the peripheral part of the substrate W.

[0094] In the above embodiment, the first additive gas flow path 310 is connected to the first main gas flow path 240, but it may also be directly connected to the gas diffusion chamber 131c of the shower head 13. Similarly, the second additive gas flow path 330 is connected to the second main gas flow path 250, but it may also be directly connected to the gas diffusion chamber 131e of the shower head 13.

[0095] In the above embodiment, the shower head 13 had two gas supply ports 130c, 130e and two gas diffusion chambers 131c, 131e, but the number of gas supply ports 130 and gas diffusion chambers 131 is not limited to this.

[0096] For example, as shown in Figure 12, the shower head 13 may have three gas supply ports 130c, 130m, and 130e, three gas diffusion chambers 131c, 131m, and 131e, and multiple gas inlets 132c, 132m, and 132e.

[0097] Similar to the embodiment described above, the processing gas supplied to the first gas supply port 130c is diffused in the first gas diffusion chamber 131c and supplied to the central part of the substrate W from a plurality of first gas inlets 132c. Similarly, the processing gas supplied to the second gas supply port 130e is diffused in the second gas diffusion chamber 131e and supplied to the peripheral part of the substrate W from a plurality of second gas inlets 132e.

[0098] Furthermore, in this embodiment, the processing gas supplied to the third gas supply port 130m is diffused in the third gas diffusion chamber 131m and supplied to the intermediate portion (middle region) of the substrate W from a plurality of third gas inlets 132m. The intermediate portion is the region between the central portion and the peripheral portion.

[0099] In this case, as shown in Figure 13, the gas supply unit 20 has, in addition to the configuration of the gas supply unit 20 of the above embodiment, a third main gas flow path 260 connecting the splitter 220 and the third gas supply port 130m. The splitter 220 branches the primary main gas flow path 230 into the secondary first main gas flow path 240, the second main gas flow path 250, and the third main gas flow path 260. A valve 261 is provided in the third main gas flow path 260. The flow of main gas in the third main gas flow path 260 can be arbitrarily switched by opening and closing the valve 261.

[0100] Furthermore, the gas supply unit 20 has a third additive gas passage 360 ​​that connects the additive gas box 300 to the third main gas passage 260. The third additive gas passage 360 ​​is connected to the primary side of the valve 261 in the third main gas passage 260.

[0101] A third flow controller 370 is provided in the third main gas flow path 260. The third flow controller 370 controls the flow rate of the additive gas supplied from the gas source 301. The configuration of the third flow controller 370 is arbitrary, but as an example, it has the same configuration as the second flow controller 340.

[0102] In the third main gas flow path 260, a valve 361 is provided on the primary side of the third flow controller 370, and a valve 362 is provided on the secondary side of the third flow controller 370. By opening and closing valves 361 and 362, the flow of the attached gas in the third additive gas flow path 360 can be arbitrarily switched.

[0103] In this embodiment as well, the same effects as in the above embodiment can be enjoyed. That is, the flow rate of the processing gas supplied to the peripheral edge of the substrate W can be appropriately controlled, and the partial controllability of the plasma processing in the peripheral edge can be improved. Moreover, by subdividing the region of the processing gas supplied to the substrate W, the partial controllability of the plasma processing on the substrate W can be further improved.

[0104] In this embodiment, the gas compressor 350 was provided in the second additive gas passage 330, but is not limited thereto. The gas compressor 350 may be provided in at least one of the first additive gas passage 310, the second additive gas passage 330, the third additive gas passage 360, the first main gas passage 240, the second main gas passage 250, and the third main gas passage 260.

[0105] In the plasma processing apparatus 1 of the above embodiments, the gas introduction section may include, in addition to the shower head 13 as shown in Figure 14, one or more side gas injection sections 14 (SGI; Side Gas Injector) attached to one or more openings formed in the side wall 10a.

[0106] Processed gas is supplied to the side gas injection section 14 from the gas supply section 20. Specifically, the gas supply section 20 has a side gas supply passage 500 that connects the main gas box 200 and the side gas injection section 14. A gas compressor 350 is installed in the side gas supply passage 500.

[0107] In such cases, the gas compressor 350 compresses the processing gas in the side gas supply passage 500 to control its speed. The increased-speed processing gas is then supplied to the side gas injection section 14 and further supplied to the plasma processing space 10s. As a result, the increased-speed processing gas is supplied to the peripheral edge of the substrate W, improving the controllability of the plasma processing at that peripheral edge.

[0108] In the above embodiments, the velocity of the process gas was controlled by compressing it using a gas compressor 350 as a flow velocity control unit, but the method of controlling the velocity of the process gas is not limited to this. For example, the velocity of the process gas may be controlled by heating the process gas to increase its volume. Alternatively, the velocity of the process gas may be controlled by reducing the diameter of the gas flow path through which the process gas flows.

[0109] In the embodiments described above, the case in which etching is performed as a plasma treatment in the plasma processing apparatus 1 has been explained, but the invention is not limited to this. For example, the method of this disclosure can also be applied when film deposition is performed as a plasma treatment. Furthermore, in the embodiments described above, the case in which plasma is performed as a substrate treatment has been explained, but the method of this disclosure can also be applied when gas treatment without plasma is performed.

[0110] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0111] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0112] Furthermore, the following configuration examples also fall within the technical scope of this disclosure. (1) A substrate processing apparatus for processing substrates, Chamber and, A substrate support portion is disposed inside the chamber and supports the substrate, The chamber includes a gas supply unit that supplies processing gas to the inside of the chamber, The aforementioned gas supply unit, A first gas supply passage supplies the processing gas to at least the central part of the substrate supported by the substrate support portion, A second gas supply passage supplies the processing gas to at least the peripheral edge of the substrate supported by the substrate support portion, A substrate processing apparatus comprising a flow rate control unit provided in at least one of the first gas supply passage and the second gas supply passage for controlling the flow rate of the processing gas. (2) The substrate processing apparatus according to (1), wherein the flow velocity control unit compresses the processing gas to increase the flow velocity of the processing gas. (3) Equipped with a control unit, The aforementioned gas supply unit, A first valve provided in the first gas supply passage, The system comprises a second valve provided in the second gas supply passage, The control unit, When supplying the processing gas from the gas supply unit into the chamber to process the substrate, the first valve and the second valve alternately open and close the flow of the processing gas to create a pulsed supply of the processing gas. A substrate processing apparatus according to (1) or (2), wherein the flow velocity control unit controls the flow velocity of the processing gas while the first valve and the second valve are closed, and the flow velocity control unit supplies the processing gas, whose flow velocity is controlled, into the chamber while the first valve and the second valve are open. (4) The processing gas includes a main gas and an additive gas, The first gas supply line includes a first main gas supply line for supplying the main gas and a first additive gas supply line for supplying the additive gas. The second gas supply line includes a second main gas supply line for supplying the main gas and a second additive gas supply line for supplying the additive gas. The substrate processing apparatus according to any one of (1) to (3), wherein the flow velocity control unit is provided in at least one of the first additive gas supply path and the second additive gas supply path and controls the flow velocity of the additive gas. (5) The substrate processing apparatus according to any one of (1) to (4), comprising a plasma generation unit configured to generate plasma from the processing gas supplied inside the chamber. (6) An optical measuring unit for measuring the emission intensity of the plasma generated inside the chamber, It comprises a control unit and, The control unit, Based on the emission intensity of the plasma measured by the optical measuring unit, a control is performed to derive the flow rate control amount of the processing gas, The substrate processing apparatus according to (5), wherein the flow rate control unit controls the flow rate of the processing gas based on the flow rate control amount. (7) The chamber is equipped with a gas introduction section for introducing the processing gas inside, The aforementioned gas introduction section includes: A first gas inlet is provided above the central part of the substrate supported by the substrate support portion, A second gas inlet is provided above the peripheral edge of the substrate supported by the substrate support portion, The first gas supply path supplies the processing gas to the first gas inlet. The substrate processing apparatus according to any one of (1) to (6), wherein the second gas supply passage supplies the processing gas to the second gas inlet. (8) The chamber is equipped with a gas introduction section for introducing the processing gas inside, The inside of the gas introduction section is divided into a first diffusion chamber and a second diffusion chamber. The first diffusion chamber is connected to the first gas supply path and diffuses the processing gas supplied to at least the central part of the substrate supported by the substrate support portion. The substrate processing apparatus according to any one of (1) to (7), wherein the second diffusion chamber is connected to the second gas supply path and diffuses the processing gas supplied to at least the peripheral edge of the substrate supported by the substrate support portion. (9) The substrate processing apparatus according to any one of (1) to (8), wherein the flow velocity control unit is provided in at least the second gas supply path. (10) The gas supply unit includes a third gas supply path that supplies the processing gas to the intermediate portion between the central portion and the peripheral portion of the substrate supported by the substrate support unit, The substrate processing apparatus according to any one of (1) to (9), wherein the flow velocity control unit is provided in at least one of the first gas supply passage, the second gas supply passage, and the third gas supply passage. (11) The gas supply unit is A side gas supply passage for supplying the processing gas from the side of the chamber, A substrate processing apparatus according to any one of (1) to (10), comprising: another flow velocity control unit provided in the side gas supply passage for controlling the flow velocity of the processing gas. (12) A substrate processing method for processing a substrate using a substrate processing apparatus, The substrate processing apparatus is Chamber and, A substrate support portion is disposed inside the chamber and supports the substrate, The chamber includes a gas supply unit that supplies processing gas to the inside of the chamber, The aforementioned gas supply unit, A first gas supply passage supplies the processing gas to at least the central part of the substrate supported by the substrate support portion, A second gas supply passage supplies the processing gas to at least the peripheral edge of the substrate supported by the substrate support portion, The system comprises a flow velocity control unit provided in at least one of the first gas supply path and the second gas supply path, which controls the flow velocity of the processed gas, The substrate processing method is (a) A step of controlling the velocity of the processing gas with the flow velocity control unit, (b) A substrate processing method comprising the step of supplying the processing gas, whose velocity is controlled by the flow velocity control unit, from the gas supply unit into the chamber to process the substrate supported by the substrate support unit. (13) The substrate processing method according to (12), wherein in step (a), the processing gas is compressed by the flow rate control unit to increase the flow rate of the processing gas. (14) The gas supply unit is A first valve provided in the first gas supply passage, The system comprises a second valve provided in the second gas supply passage, In step (a) above, the first valve and the second valve are closed, and the flow rate of the processing gas is controlled by the flow rate control unit. In step (b) above, the first valve and the second valve are opened to supply the processing gas, whose flow rate is controlled by the flow rate control unit, into the chamber. The substrate processing method according to (12) or (13), wherein the supply of the processing gas is pulsed by alternately opening and closing the flow of the processing gas in the first valve and the second valve. (15) The processing gas includes a main gas and an additive gas, The first gas supply line includes a first main gas supply line for supplying the main gas and a first additive gas supply line for supplying the additive gas. The second gas supply line includes a second main gas supply line for supplying the main gas and a second additive gas supply line for supplying the additive gas. The substrate processing method according to any one of (12) to (14), wherein in step (a), the flow rate of the additive gas is controlled by the flow rate control unit provided in at least one of the first additive gas supply path and the second additive gas supply path. (16) The substrate processing apparatus includes a plasma generation unit configured to generate plasma from the processing gas supplied inside the chamber, A substrate processing method according to any one of (12) to (15), wherein in step (b), the plasma is generated by the plasma generation unit to process the substrate. (17) The substrate processing apparatus includes an optical measuring unit for measuring the emission intensity of the plasma generated inside the chamber, The above step (a) is, A step of deriving the amount of flow velocity control for the processing gas based on the emission intensity of the plasma measured by the optical measuring unit, The substrate processing method according to (16), comprising the step of controlling the flow rate of the processing gas by the flow rate control unit based on the flow rate control amount. (18) The gas supply unit is A side gas supply passage for supplying the processing gas from the side of the chamber, The side gas supply passage is provided with another flow velocity control unit which controls the flow velocity of the processed gas, In step (a) above, the velocity of the processing gas is controlled by the other flow velocity control unit, The substrate processing method according to any one of (12) to (17), wherein in step (b), the processing gas whose speed is controlled by the other flow rate control unit is supplied from the side gas supply passage into the chamber to process the substrate. [Explanation of Symbols]

[0113] 1. Plasma processing equipment 10 Plasma processing chamber 11. Substrate support section 20 Gas Supply Department 240 First main gas flow path 250 Second main gas flow path 310 First additive gas flow path 330 Second additive gas flow path 350 Gas Compressor W board

Claims

1. A substrate processing apparatus for processing substrates, Chamber and, A substrate support portion is disposed inside the chamber and supports the substrate, The chamber includes a gas supply unit that supplies processing gas to the inside of the chamber, The aforementioned gas supply unit, A first gas supply passage supplies the processing gas to at least the central part of the substrate supported by the substrate support portion, A second gas supply passage supplies the processing gas to at least the peripheral edge of the substrate supported by the substrate support portion, A substrate processing apparatus comprising a flow velocity control unit provided in at least one of the first gas supply passage and the second gas supply passage for controlling the flow velocity of the processing gas.

2. The substrate processing apparatus according to claim 1, wherein the flow velocity control unit compresses the processing gas to increase the flow velocity of the processing gas.

3. Equipped with a control unit, The aforementioned gas supply unit, A first valve provided in the first gas supply passage, The system comprises a second valve provided in the second gas supply passage, The control unit, When supplying the processing gas from the gas supply unit into the chamber to process the substrate, the first valve and the second valve alternately open and close the flow of the processing gas to create a pulsed supply of the processing gas. The substrate processing apparatus according to claim 1 or 2, wherein the flow velocity control unit controls the flow velocity of the processing gas while the first valve and the second valve are closed, and controls the supply of the processing gas, whose flow velocity is controlled by the flow velocity control unit, into the chamber while the first valve and the second valve are open.

4. The aforementioned processing gas includes a main gas and an additive gas. The first gas supply line includes a first main gas supply line for supplying the main gas and a first additive gas supply line for supplying the additive gas. The second gas supply line includes a second main gas supply line for supplying the main gas and a second additive gas supply line for supplying the additive gas. The substrate processing apparatus according to claim 1 or 2, wherein the flow velocity control unit is provided in at least one of the first additive gas supply path and the second additive gas supply path, and controls the flow velocity of the additive gas.

5. The substrate processing apparatus according to claim 1 or 2, further comprising a plasma generation unit configured to generate plasma from the processing gas supplied inside the chamber.

6. An optical measuring unit for measuring the emission intensity of the plasma generated inside the chamber, It comprises a control unit and, The control unit, Based on the emission intensity of the plasma measured by the optical measuring unit, a control is performed to derive the flow rate control amount of the processing gas, The substrate processing apparatus according to claim 5, wherein the flow rate control unit controls the flow rate of the processing gas based on the flow rate control amount.

7. The chamber is equipped with a gas introduction section for introducing the processing gas, The aforementioned gas introduction section includes: A first gas inlet is provided above the central part of the substrate supported by the substrate support portion, A second gas inlet is provided above the peripheral edge of the substrate supported by the substrate support portion, The first gas supply path supplies the processing gas to the first gas inlet. The substrate processing apparatus according to claim 1 or 2, wherein the second gas supply path supplies the processing gas to the second gas inlet.

8. The chamber is equipped with a gas introduction section for introducing the processing gas, The inside of the gas introduction section is divided into a first diffusion chamber and a second diffusion chamber. The first diffusion chamber is connected to the first gas supply path and diffuses the processing gas supplied to at least the central part of the substrate supported by the substrate support portion. The substrate processing apparatus according to claim 1 or 2, wherein the second diffusion chamber is connected to the second gas supply path and diffuses the processing gas supplied to at least the peripheral edge of the substrate supported by the substrate support portion.

9. The substrate processing apparatus according to claim 1 or 2, wherein the flow velocity control unit is provided in at least the second gas supply path.

10. The gas supply unit includes a third gas supply path that supplies the processing gas to the intermediate portion between the central portion and the peripheral portion of the substrate supported by the substrate support unit. The substrate processing apparatus according to claim 1 or 2, wherein the flow velocity control unit is provided in at least one of the first gas supply passage, the second gas supply passage, and the third gas supply passage.

11. The aforementioned gas supply unit, A side gas supply passage for supplying the processing gas from the side of the chamber, The substrate processing apparatus according to claim 1 or 2, further comprising: an additional flow velocity control unit provided in the side gas supply passage for controlling the flow velocity of the processing gas.

12. A substrate processing method for processing a substrate using a substrate processing apparatus, The substrate processing apparatus is Chamber and, A substrate support portion is disposed inside the chamber and supports the substrate, The chamber includes a gas supply unit that supplies processing gas to the inside of the chamber, The aforementioned gas supply unit, A first gas supply passage supplies the processing gas to at least the central part of the substrate supported by the substrate support portion, A second gas supply passage supplies the processing gas to at least the peripheral edge of the substrate supported by the substrate support portion, The system comprises a flow velocity control unit provided in at least one of the first gas supply path and the second gas supply path, which controls the flow velocity of the processed gas, The substrate processing method is (a) A step of controlling the velocity of the processing gas with the flow velocity control unit, (b) A substrate processing method comprising the step of supplying the processing gas, whose velocity is controlled by the flow velocity control unit, from the gas supply unit into the chamber to process the substrate supported by the substrate support unit.

13. The substrate processing method according to claim 12, wherein in step (a), the processing gas is compressed by the flow velocity control unit to increase the flow velocity of the processing gas.

14. The aforementioned gas supply unit, A first valve provided in the first gas supply passage, The system comprises a second valve provided in the second gas supply passage, In step (a) above, the first valve and the second valve are closed, and the flow rate of the processing gas is controlled by the flow rate control unit. In step (b) above, the first valve and the second valve are opened to supply the processing gas, whose flow rate is controlled by the flow rate control unit, into the chamber. The substrate processing method according to claim 12 or 13, wherein the supply of the processing gas is pulsed by alternately opening and closing the flow of the processing gas in the first valve and the second valve.

15. The aforementioned processing gas includes a main gas and an additive gas. The first gas supply line includes a first main gas supply line for supplying the main gas and a first additive gas supply line for supplying the additive gas. The second gas supply line includes a second main gas supply line for supplying the main gas and a second additive gas supply line for supplying the additive gas. The substrate processing method according to claim 12 or 13, wherein in step (a), the flow rate of the additive gas is controlled by the flow rate control unit provided in at least one of the first additive gas supply path and the second additive gas supply path.

16. The substrate processing apparatus includes a plasma generation unit configured to generate plasma from the processing gas supplied inside the chamber, The substrate processing method according to claim 12 or 13, wherein in step (b), the plasma is generated by the plasma generation unit to process the substrate.

17. The substrate processing apparatus includes an optical measuring unit for measuring the emission intensity of the plasma generated inside the chamber, The above step (a) is, A step of deriving the amount of flow velocity control for the processing gas based on the emission intensity of the plasma measured by the optical measuring unit, The substrate processing method according to claim 16, comprising the step of controlling the flow rate of the processing gas by the flow rate control unit based on the flow rate control amount.

18. The aforementioned gas supply unit, A side gas supply passage for supplying the processing gas from the side of the chamber, The side gas supply passage is provided with another flow velocity control unit which controls the flow velocity of the processed gas, In step (a) above, the velocity of the processing gas is controlled by the other flow velocity control unit, The substrate processing method according to claim 12 or 13, wherein in step (b), the processing gas whose velocity is controlled by the other flow velocity control unit is supplied from the side gas supply passage into the chamber to process the substrate.

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