Light-emitting diodes and display devices including the same

Abstract

To provide light-emitting diodes and display devices that prevent color mixing and enable process optimization. [Solution] The present disclosure provides a display device comprising a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the upper part of the substrate, and a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode, respectively, disposed on the first sub-pixel, the second sub-pixel, and the third sub-pixel, each emitting a first color, a second color, and a third color of light, wherein the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode each have a first bottom pattern, a second bottom pattern, and a third bottom pattern, and the first bottom pattern, the second bottom pattern, and the third bottom pattern are formed to be different from each other, thereby providing an exclusive display device.

Description

Technical Field

[0001] The present invention relates to a display device, and more particularly to a display device including a light emitting diode having a bottom pattern.

Background Art

[0002] Recently, display devices (Panel Display) such as liquid crystal display devices (LCD), organic light emitting diode display devices (OLED), and field emission display devices (FED), which have excellent characteristics such as thinning, lightening, and low power consumption, have been developed and adopted in various fields.

[0003] Among them, the organic light emitting diode display device has the advantage of not requiring a separate light source, but has the disadvantage that it is likely to malfunction due to the external environment because of the material characteristics of the organic matter that is vulnerable to moisture and oxygen.

[0004] In order to improve such disadvantages, a light emitting diode (LED) chip made of an inorganic material or a display device using a light emitting diode has been proposed.

[0005] Such a light emitting diode chip is formed on a growth substrate and then transferred and attached to a display panel by a transfer technique. In order to distinguish red, green, and blue light emitting diode chips, they are manufactured in an elliptical shape so that the lengths of their long axes and short axes are different.

[0006] However, with the increase in resolution, the size of the light emitting diode chip decreases. As a result, the exclusivity based on the long axis and short axis of the light emitting diode chip decreases, and there is a problem that the light emitting diode chip is damaged.

Summary of the Invention

Problems to be Solved by the Invention

[0007] This disclosure is presented to solve the aforementioned problems and aims to provide a light-emitting diode and a display device including the same that prevent color mixing and optimize the process by providing the light-emitting diode with bottom surface patterns of different shapes.

[0008] Another objective of this disclosure is to provide light-emitting diodes and display devices including them that are applicable to high resolution by providing red, green, and blue light-emitting diodes with bottom surface patterns of different shapes and sizes. [Means for solving the problem]

[0009] This disclosure provides a display device comprising a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the upper part of the substrate, and a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode disposed on the first sub-pixel, the second sub-pixel, and the third sub-pixel, respectively, and emitting light of a first color, a second color, and a third color, respectively, wherein the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode each have a first bottom pattern, a second bottom pattern, and a third bottom pattern, and the first bottom pattern, the second bottom pattern, and the third bottom pattern are formed to be different from each other and mutually exclusive.

[0010] Furthermore, the first bottom pattern, the second bottom pattern, and the third bottom pattern can be formed in different shapes and have mutual exclusivity.

[0011] Furthermore, the first base pattern is flat, and the second base pattern and the third base pattern may have different three-dimensional shapes.

[0012] Furthermore, the second base pattern and the third base pattern may be embossed and incised, respectively.

[0013] Furthermore, the second base pattern and the third base pattern may be different in relief or different in intaglio.

[0014] Furthermore, the area of ​​the first bottom pattern may be the same as the bottom area of ​​the first light-emitting diode.

[0015] Furthermore, the area of ​​the second base pattern is smaller than the base area of ​​the second light-emitting diode, and the area of ​​the third base pattern is smaller than the base area of ​​the third light-emitting diode. The second base pattern and the third base pattern can each have one vertical cross-section from among a semicircular shape, a triangular shape, a rectangular shape, and a trapezoidal shape.

[0016] Furthermore, the three-dimensional shape of the second base pattern and the third base pattern may be one of the following: hemispherical, polygonal pyramidal, conical, elliptical conical, polygonal cylindrical, cylindrical, elliptical cylindrical, frustum of polygonal pyramidal, frustum of cone, or frustum of elliptical pyramidal.

[0017] Furthermore, the second light-emitting diode may have a plurality of second bottom patterns of the same or different sizes, and the third light-emitting diode may have a plurality of third bottom patterns of the same or different sizes.

[0018] Furthermore, the third bottom pattern is incised, and a wavelength conversion layer containing a wavelength conversion material is arranged on the third bottom pattern, and the wavelength conversion material may include at least one of quantum dots and nanooptical materials.

[0019] Furthermore, a lens layer may be arranged in the third bottom pattern, and the lens layer may include a transparent insulating material having a refractive index greater than that of the first semiconductor layer of the third light-emitting diode.

[0020] Furthermore, each of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode includes a first semiconductor layer, an active layer disposed on top of the first semiconductor layer, a second semiconductor layer disposed on top of the active layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The first bottom pattern, the second bottom pattern, and the third bottom pattern are formed on the bottom surfaces of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode, respectively. The first electrode is disposed at the bottom of the bottom surface of the first semiconductor layer, and the second electrode is disposed at the top of the top surface of the second semiconductor layer. Each of the first electrodes of the second light-emitting diode and the third light-emitting diode is ring-shaped with an opening, and the second bottom pattern and the third bottom pattern can be placed in the opening, respectively.

[0021] Furthermore, the first bottom pattern, the second bottom pattern, and the third bottom pattern can be formed to be different from each other and mutually exclusive.

[0022] Furthermore, the first bottom pattern is flat and has the same area as the bottom surface area of ​​the first light-emitting diode, and the second bottom pattern and the third bottom pattern may be three-dimensional shapes that are the same in shape as each other but differ in size.

[0023] On the other hand, the present invention provides a light-emitting diode comprising a first semiconductor layer, an active layer disposed on top of the first semiconductor layer, a second semiconductor layer disposed on top of the active layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein the first semiconductor layer has one bottom surface pattern, either embossed or incised.

[0024] Furthermore, the area of ​​the bottom surface pattern is smaller than the bottom surface area of ​​the first semiconductor layer, and the bottom surface pattern can have one vertical cross-section from among a semicircular shape, a triangular shape, a rectangular shape, and a trapezoidal shape.

[0025] Further, the bottom pattern can be one of a hemispherical shape, a polygonal pyramid shape, a conical shape, an elliptical cone shape, a polygonal cylinder shape, a cylindrical shape, an elliptical cylinder shape, a polygonal frustum shape, a conical frustum shape, and an elliptical frustum shape in a three-dimensional manner.

[0026] Further, the first electrode is disposed below the bottom surface of the first semiconductor layer, the second electrode is disposed above the upper surface of the second semiconductor layer, the first electrode is in a ring shape having an opening, and the bottom pattern can be respectively disposed in the opening.

[0027] Further, the bottom pattern is in an intaglio shape, a wavelength conversion layer containing a wavelength conversion material is disposed on the bottom pattern, and the wavelength conversion material can contain at least one of quantum dots and nano-optical materials.

[0028] Further, the bottom pattern is in an intaglio shape, a lens layer is disposed on the bottom pattern, and the lens layer can contain a transparent insulating material having a refractive index larger than that of the first semiconductor layer.

[0029] Further, the first semiconductor layer can have a plurality of bottom patterns having the same or different sizes from each other.

Advantages of the Invention

[0030] The present disclosure provides the effect of preventing color mixing and optimizing the process by providing bottom patterns with different shapes to the light-emitting diode.

[0031] The present disclosure provides the effect applicable to high resolution by providing bottom patterns with different shapes to red, green, and blue light-emitting diodes.

Brief Description of the Drawings

[0032] [Figure 1] It is a diagram showing a display device according to a first embodiment of the present invention. [Figure 2] It is a diagram showing a sub-pixel of the display device according to the first embodiment of the present invention. [Figure 3]This is a cross-sectional view showing each subpixel in the display panel of a display device according to the first embodiment of the present invention. [Figure 4] This figure shows a self-assembled substrate (or assembled substrate) for a light-emitting diode of a display device according to a first embodiment of the present invention. [Figure 5] This is an enlarged view of section A in Figure 4. [Figure 6] This figure shows a plurality of light-emitting diodes and a self-assembled substrate (or assembled substrate) in a display device according to a first embodiment of the present invention. [Figure 7A] This figure shows a second light-emitting diode and a self-assembled substrate (or assembled substrate) in a display device according to a second embodiment of the present invention. [Figure 7B] This figure shows a second light-emitting diode and a self-assembled substrate (or assembled substrate) in a display device according to a third embodiment of the present invention. [Figure 7C] This figure shows a second light-emitting diode and a self-assembled substrate (or assembled substrate) in a display device according to a fourth embodiment of the present invention. [Figure 8A] This figure shows a third light-emitting diode and a self-assembled substrate (or assembled substrate) in a display device according to a fifth embodiment of the present invention. [Figure 8B] This figure shows a third light-emitting diode and a self-assembled substrate (or assembled substrate) in a display device according to a sixth embodiment of the present invention. [Figure 8C] This figure shows a third light-emitting diode and a self-assembling substrate (or assembled substrate) in a display device according to the seventh embodiment of the present invention. [Figure 9A] This figure shows the third bottom surface pattern of the third light-emitting diode in a display device according to the eighth embodiment of the present invention. [Figure 9B] This figure shows the third bottom surface pattern of the third light-emitting diode in a display device according to the ninth embodiment of the present invention. [Figure 9C] This figure shows the third bottom surface pattern of the third light-emitting diode in a display device according to the tenth embodiment of the present invention. [Figure 9D]This figure shows the third bottom surface pattern of the third light-emitting diode in a display device according to the 11th embodiment of the present invention. [Figure 10] This figure shows a plurality of light-emitting diodes and a self-assembled substrate (or assembled substrate) in a display device according to a twelfth embodiment of the present invention. [Figure 11A] This figure shows a third light-emitting diode in a display device according to the 13th embodiment of the present invention. [Figure 11B] This figure shows a third light-emitting diode in a display device according to the 14th embodiment of the present invention. [Modes for carrying out the invention]

[0033] The terminology used in the embodiments of this invention has been selected, as far as possible, to be common terms widely used today, but may differ depending on the intent of the articulators, case law, the emergence of new technologies, etc. Where the applicant has arbitrarily selected specific terms, their meanings will be detailed. Therefore, terms used herein should be defined based on their meaning and the overall content of this disclosure.

[0034] Throughout the specification, if a part is described as "including" or "comprising" a certain component, unless otherwise specified, this does not exclude other components, but rather may include other components.

[0035] Throughout the specification, the expression "at least one of a, b, and c" may encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c." The advantages and features of the present invention, and how they are achieved, will become clearer with reference to the embodiments detailed with the drawings.

[0036] The shapes, areas, ratios, angles, and quantities disclosed in the drawings illustrating embodiments of the present invention are illustrative and the present invention is not limited thereto. When describing embodiments, if a specific explanation of related prior art is deemed to obscure the gist of the present invention, such detailed explanation will be omitted.

[0037] Wherever "equipped," "included," "possessed," "have," or "become" is used in this specification, other parts may be added. Furthermore, wherever a component is described in the singular form, it may be interpreted as plural unless otherwise explicitly stated. In interpreting components, a margin of error is included even without explicit mention.

[0038] For example, when describing the positional relationship between two components using terms such as "above," "above," "below," or "beside," one or more other components may be located between those two components. When an element or layer is described as "on" another element or layer, this includes all cases where another layer or other element is directly above or between it and the other element.

[0039] Furthermore, while terms such as "first" and "second" are used to distinguish the components, the components are not limited to these terms. Therefore, the first component mentioned below may also be the second component within the technical concept of the present invention.

[0040] The area, length, and thickness of each component described in the specification are illustrated for illustrative purposes only and do not necessarily limit the present invention to them.

[0041] The features of each of the multiple embodiments of the present invention can be combined or integrated partially or entirely, enabling a wide range of technically diverse interconnections and drives. Furthermore, each embodiment can be implemented independently of or in conjunction with one another.

[0042] Furthermore, the terms described later are defined in consideration of their function in implementing the present invention, and may differ depending on the intent or conventions of the user or operator. Therefore, these terms should be defined based on the overall content of this specification.

[0043] The transistors constituting the pixel circuit of the present invention may include at least one of the following: oxide thin film transistors (Oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polysilicon TFTs (Low Temperature Polysilicon TFTs (LTPS TFTs).

[0044] The following embodiments will primarily describe organic light-emitting devices. However, the embodiments of the present invention are not limited to organic light-emitting devices and can also be applied to inorganic light-emitting devices containing inorganic light-emitting materials. For example, the embodiments of the present invention can also be applied to quantum dot devices.

[0045] Expressions such as "First," "Second," and "Third" are terms used to distinguish the configuration of each embodiment, and the embodiments are not limited to these terms. Therefore, the same term may refer to different configurations depending on the embodiment.

[0046] The display device according to the present invention will be described below with reference to the drawings.

[0047] Figure 1 shows a display device according to a first embodiment of the present invention. The display device may be a Light Emitting Diode Display Device (LED) including a light-emitting diode or a light-emitting diode chip. For example, the display device may be a micro-LED display device or a mini-LED display device.

[0048] As shown in Figure 1, the display device 110 according to the first embodiment of the present invention includes a timing control unit (e.g., a timing control circuit) 120, a data drive unit (e.g., a data drive circuit) 122, a first gate drive unit (e.g., a gate drive circuit) 124, a second gate drive unit (e.g., a gate drive circuit) 126, and a display panel 128.

[0049] The timing control unit 120 can generate video data (RGB), data control signal (DCS), and gate control signal (GCS) using multiple timing signals such as video signals, data enable signals, horizontal synchronization signals, vertical synchronization signals, and clock signals transmitted from an external system (not shown), such as a graphics card or TV system. The timing control unit 120 then transmits the generated video data (RGB) and data control signal (DCS) to the data drive unit 122, and transmits the generated gate control signal (GCS) to the first gate drive unit 124 and the second gate drive unit 126.

[0050] The data drive unit 122 uses the video data (RGB) and data control signal (DCS) received from the timing control unit 120 to generate a data signal (data voltage, Vda in Figure 2), and applies the generated data signal Vda to the data wiring DL of the display panel 128.

[0051] The first gate drive unit 124 and the second gate drive unit 126 utilize the gate control signal GCS received from the timing control unit 120 to generate gate signals (gate voltages, Vsc and Vse in Figure 2), and apply the generated gate signals Vsc and Vse to the gate wiring GL of the display panel 128.

[0052] Here, the first gate drive unit 124 and the second gate drive unit 126 are both provided on the substrate of the display panel 128 in which gate wiring GL, data wiring DL, and pixels P are formed, and may be of a gate-in-panel (GIP) type, positioned in the non-display area NDA.

[0053] In the embodiment shown in Figure 1, the first gate drive unit 124 and the second gate drive unit 126 are arranged on both sides of the display panel 128 as an example, but in other embodiments, one gate drive unit may be arranged on one side of the display panel 128.

[0054] The display panel 128 includes a central display area DA and a non-display area NDA surrounding the display area DA, and displays images using gate signals Vsc, Vse and data signal Vda. The display panel 128 includes multiple pixels P, multiple gate wirings GL, and multiple data wirings DL arranged in the display area DA to display images.

[0055] Each of the multiple pixels P includes a first sub-pixel SP1 to a third sub-pixel SP3, and gate wiring GL and data wiring DL intersect with each other, defining the first sub-pixel SP1 to the third sub-pixel SP3, and the first sub-pixel SP1 to the third sub-pixel SP3 are connected to gate wiring GL and data wiring DL, respectively. For example, the first sub-pixel SP1 to the third sub-pixel SP3 correspond to the first to third colors, and the first to third colors may be red, green, and blue, respectively.

[0056] The first to third sub-pixels SP1 to SP3 may each include multiple transistors such as a switching transistor (Tsw in Figure 2), a driving transistor (Tdr in Figure 2), and a sensing transistor (Tse in Figure 2), as well as a storage capacitor (Cst in Figure 2) and a light-emitting diode (Del in Figure 2).

[0057] Figure 2 shows the subpixels of a display device according to the first embodiment of the present invention. This will be explained with reference to Figure 1.

[0058] As shown in Figure 2, each of the first sub-pixels SP1 to the third sub-pixel SP3 in the display device 110 according to the first embodiment of the present invention includes a switching transistor Tsw, a driving transistor Tdr, a sensing transistor Tse, a storage capacitor Cst, and a light-emitting diode Del.

[0059] In the embodiment shown in Figure 2, each of the first to third sub-pixels SP1 to SP3 is given as a 3T1C, which includes three transistors and one capacitor. However, in other embodiments, each of the first to third sub-pixels SP1 to SP3 could be one of the following: 6T1C, which includes six transistors and one capacitor; 7T1C, which includes seven transistors and one capacitor; or 8T1C, which includes eight transistors and one capacitor.

[0060] In the embodiment shown in Figure 2, the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse are all negative (N) type. However, in other embodiments, at least one of the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse may be positive (P) type.

[0061] The switching transistor Tsw can perform switching based on the scan signal Vsc and transmit the data signal Vda to the first node N1.

[0062] The gate electrode of the switching transistor Tsw is connected to the gate wiring GL and receives the scan signal Vsc, the drain electrode of the switching transistor Tsw is connected to the data wiring DL and receives the data signal Vda, and the source electrode of the switching transistor Tsw can be connected to the first node N1.

[0063] The drive transistor Tdr is switched by the voltage at the first node N1, and can transmit a high-potential signal (high-potential voltage) Vdd to the second node N2.

[0064] The gate electrode of the drive transistor Tdr is connected to the first node N1, the drain electrode of the drive transistor Tdr is connected to the high-potential power supply wiring and receives the high-potential signal Vdd, and the source electrode of the drive transistor Tdr can be connected to the second node N2.

[0065] The sensing transistor Tse is switched by the sensing signal (sensing voltage) Vse and can transmit the reference signal (reference voltage) Vre to the second node N2, or transmit the voltage of the second node N2 to the reference wiring.

[0066] The gate electrode of the sensing transistor Tse is connected to the gate wiring GL and receives the sensing signal Vse; the drain electrode of the sensing transistor Tse is connected to the reference wiring and receives the reference signal (reference voltage) Vre, or transmits the voltage of the second node N2 to the reference wiring; and the source electrode of the sensing transistor Tse can be connected to the second node N2.

[0067] The storage capacitor Cst can maintain the data signal Vda supplied to the first node N1 for one frame and store the threshold voltage Vth of the drive transistor Tdr.

[0068] The first and second capacitor electrodes of the storage capacitor Cst can be connected to the first node N1 and the second node N2, respectively.

[0069] The light-emitting diode Del can emit light with a brightness proportional to the current of the driving transistor Tdr.

[0070] The anode of the light-emitting diode Del is connected to the second node N2, and the cathode of the light-emitting diode Del is connected to the low-potential power supply wiring, so that it can receive a low-potential signal (low-potential voltage) Vss.

[0071] The source electrode of the switching transistor Tsw, the gate electrode of the driving transistor Tdr, and the first capacitor electrode of the storage capacitor Cst constitute the first node N1, while the source electrode of the driving transistor Tdr, the source electrode of the sensing transistor Tse, the second capacitor electrode of the storage capacitor Cst, and the anode of the light-emitting diode Del can constitute the second node N2.

[0072] In this way, by driving the sub-pixel circuits of the first sub-pixel SP1 to the third sub-pixel SP3, the light-emitting diode Del can display an image having a brightness corresponding to the video data.

[0073] Referring to Figure 3, the cross-sectional structure of each sub-pixel SP1 to SP3 in the display panel 128 of the display device 110 will be described.

[0074] Figure 3 is a cross-sectional view showing each subpixel in the display panel of a display device according to the first embodiment of the present invention. Figures 1 and 2 will be used for explanation.

[0075] As shown in Figure 3, a light-shielding pattern 132 is placed on each sub-pixel SP1 to SP3 on the upper part of the substrate 130, and a first buffer layer 134 is placed on the entire surface of the substrate 130 above the light-shielding pattern 132.

[0076] The light-shielding pattern 132 serves to block incident light from below the substrate 130. For example, the light-shielding pattern 132 may be a single layer or a multilayer made of a metallic substance such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0077] The first buffer layer 134 serves to block moisture and oxygen from the outside. For example, the first buffer layer 134 is made of silicon oxide (SiO2) or silicon nitride (SiN x ) may be a single layer or a multilayer made of inorganic insulating material.

[0078] A semiconductor layer 136 is placed above the first buffer layer 134 corresponding to the light-shielding pattern 132, and a gate insulating layer 138 is placed over the entire surface of the substrate 130 above the semiconductor layer 136.

[0079] The semiconductor layer 136 includes an undoped central channel region and impurity-doped source and drain regions on either side of the channel region. For example, the semiconductor layer 136 can be formed from a polycrystalline semiconductor material such as polycrystalline silicon, or from an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO).

[0080] For example, the gate insulating layer 138 is made of silicon oxide (SiO2) or silicon nitride (SiN x ) may be a single layer or a multilayer made of inorganic insulating material.

[0081] A gate electrode 140 is positioned above the gate insulating layer 138 corresponding to the channel region of the semiconductor layer 136, a first capacitor electrode 142 is positioned above the gate insulating layer 138, spaced apart from the gate electrode 140, and a first interlayer insulating layer 144 is positioned over the entire surface of the substrate 130 above the gate electrode 140 and the first capacitor electrode 142.

[0082] The gate electrode 140 and the first capacitor electrode 142 are formed from the same material in the same layer. For example, the gate electrode 140 and the first capacitor electrode 142 may be a single layer or a multilayer made of a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0083] For example, the first interlayer insulating layer 144 is made of silicon oxide (SiO2) or silicon nitride (SiN x ) may be a single layer or a multilayer made of inorganic insulating material.

[0084] A second capacitor electrode 146 is positioned above the first interlayer insulating layer 144 corresponding to the first capacitor electrode 142, and a second interlayer insulating layer 148 is positioned over the entire surface of the substrate 130 above the second capacitor electrode 146.

[0085] For example, the second capacitor electrode 146 may be a single layer or a multilayer made of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0086] For example, the second interlayer insulating layer 148 is made of silicon oxide (SiO2) or silicon nitride (SiN x ) may be a single layer or a multilayer made of inorganic insulating material.

[0087] The first capacitor electrode 142, the first interlayer insulating layer 144, and the second capacitor electrode 146 can constitute a storage capacitor Cst.

[0088] A source electrode 150 and a drain electrode 152 are positioned on top of the second interlayer insulating layer 148, spaced apart from each other, and a first planarization layer 154 is positioned over the entire surface of the substrate 130 above the source electrode 150 and the drain electrode 152.

[0089] The source electrode 150 and drain electrode 152 are connected to the source and drain regions of the semiconductor layer 136, respectively, via contact holes in the second interlayer insulating layer 148, the first interlayer insulating layer 144, and the gate insulating layer 138. The drain electrode 152 is connected to the light-shielding pattern 132 via contact holes in the second interlayer insulating layer 148, the first interlayer insulating layer 144, the gate insulating layer 138, and the first buffer layer 134.

[0090] The source electrode 150 and the drain electrode 152 are formed from the same material in the same layer. For example, the source electrode 150 and the drain electrode 152 may be a single layer or a multilayer made of a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0091] For example, the first planarization layer 154 may be a single layer or a multilayer made of an organic insulating material such as photoacrylic or benzocyclobutene (BCB).

[0092] The semiconductor layer 136, gate electrode 140, source electrode 150, and drain electrode 152 can constitute a drive transistor Tdr.

[0093] A connecting electrode 156 is positioned on top of the first planarization layer 154 corresponding to the source electrode 150, a power supply wiring 158 is positioned on top of the first planarization layer 154, spaced apart from the connecting electrode 156, and an adhesive layer 160 is positioned over the entire surface of the substrate 130 above the connecting electrode 156 and the power supply wiring 158.

[0094] The connecting electrode 156 is connected to the source electrode 150 through a contact hole in the first planarization layer 154, and the connecting electrode 156 and the power supply wiring 158 are formed from the same material in the same layer.

[0095] For example, the connecting electrode 156 and the power supply wiring 158 may be a single layer or a multilayer made of one of the following metallic materials: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0096] For example, the power supply wiring 158 can supply a low-potential signal Vss.

[0097] A first semiconductor layer 162 is placed on top of the adhesive layer 160 corresponding to the connecting electrode 156. An active layer 164, a second semiconductor layer 166, and a second electrode 170 are sequentially placed on one side of the upper part of the first semiconductor layer 162, and a first electrode 168 is placed on the other side of the upper part of the first semiconductor layer 162.

[0098] The first semiconductor layer 162 supplies electrons to the active layer 164, and the second semiconductor layer 166 supplies holes to the active layer 164. The active layer 164 utilizes the electrons and holes to generate light.

[0099] For example, the first semiconductor layer 162 may contain n-type gallium nitride (n-GaN), the second semiconductor layer 166 may contain p-type gallium nitride (p-GaN), and the active layer 164 may contain multiple quantum wells (MQW:MQW).

[0100] For example, the first electrode 168 may be the cathode and the second electrode 170 may be the anode.

[0101] The first semiconductor layer 162, the active layer 164, the second semiconductor layer 166, the first electrode 168, and the second electrode 170 can constitute a light-emitting diode Del (or light-emitting diode chip).

[0102] A second planarization layer 172 is placed over the entire surface of the substrate 130 above the first electrode 168 and the second electrode 170, and spaced-apart first connection wiring 174 and second connection wiring 176 are placed above the second planarization layer 172 corresponding to the light-emitting diode Del.

[0103] For example, the second planarization layer 172 may be a single layer or a multilayer made of an organic insulating material such as photoacrylic or benzocyclobutene.

[0104] The first connecting wire 174 is connected to the connecting electrode 156 via the contact holes of the adhesive layer 160 and the second planarization layer 172, and is connected to the second electrode 170 via the contact holes of the second planarization layer 172.

[0105] The second connecting wire 176 is connected to the power supply wire 156 via the contact holes of the adhesive layer 160 and the second planarization layer 172, and is connected to the first electrode 168 via the contact holes of the second planarization layer 172.

[0106] For example, the first connecting wire 174 and the second connecting wire 176 can be formed from transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0107] A sealing layer 178 is placed over the entire surface of the substrate 130 above the first connection wiring 174 and the second connection wiring 176.

[0108] The sealing layer 178 suppresses the penetration of impurities such as oxygen or moisture.

[0109] For example, the sealing layer 178 is made of silicon oxide (SiO2) or silicon nitride (SiN x ) may be a single layer or a multilayer made of inorganic insulating material.

[0110] In the first embodiment, a horizontal type light-emitting diode (Del) is used as an example, but in other embodiments, a vertical type light-emitting diode can also be used.

[0111] The light-emitting diode Del of the display device 110 can be attached to the substrate 130 by self-assembly technology, which will be explained with reference to the figure.

[0112] Figure 4 shows a self-assembled substrate (or assembled substrate) of a light-emitting diode in a display device according to the first embodiment of the present invention, and Figure 5 is an enlarged view of portion A in Figure 4. Figures 1 to 3 will be used for explanation.

[0113] As shown in Figure 4, a self-assembled substrate (or assembled substrate) 210 having multiple inset patterns 200 on its lower surface is placed at the top of the chamber 232, a self-assembly device 230 that generates a magnetic field is placed above the self-assembled substrate (or assembled substrate) 210, and a fluid 234 containing multiple light-emitting diodes Del is placed inside the chamber 232. The multiple light-emitting diodes Del may be grown on a growth substrate, then separated from the growth substrate and placed in the fluid 234.

[0114] The self-organizing device 230 can move up, down, left, and right, or rotate.

[0115] For example, fluid 234 could be water, such as ultrapure water.

[0116] Multiple light-emitting diodes (LEDs) Del are moved from inside the fluid 234 to the self-assembled substrate (or assembled substrate) 210 by the magnetic field of the self-assembly device 230, so that the LEDs Del can include a magnetic layer.

[0117] For example, the magnetic layer may contain a magnetic metal such as nickel (Ni) and be placed on at least one of the first electrode 168 and the second electrode 170 of the light-emitting diode Del.

[0118] As shown in Figure 5, a first self-assembly electrode 220 and a second self-assembly electrode 222, spaced apart from each other, are arranged on the lower surface of the self-assembly substrate (or assembled substrate) 210, and an insulating layer 224 is placed over the entire surface of the self-assembly substrate (or assembled substrate) 210 below the first self-assembly electrode 220 and the second self-assembly electrode 222.

[0119] For example, the first self-assembled electrode 220 and the second self-assembled electrode 222 are made of a transparent conductive material or a metallic material, and the insulating layer 224 may be a single layer or a multilayer made of an inorganic insulating material or an organic insulating material.

[0120] A partition wall 226 is positioned below the insulating layer 224 corresponding to the first self-organizing electrode 220 and the second self-organizing electrode 222. The partition wall 226 partially overlaps each of the first self-organizing electrode 220 and the second self-organizing electrode 222, and the space between the partition walls 226 constitutes one of a plurality of self-organizing patterns 200.

[0121] When an AC voltage is applied to the first self-assembling electrode 220 and the second self-assembling electrode 222, an electric field is generated between the first self-assembling electrode 220 and the second self-assembling electrode 222. Among the multiple light-emitting diodes Del contained in the fluid 234, the light-emitting diodes Del adjacent to the multiple self-assembling patterns 200 are embedded into the multiple self-assembling patterns 200 by the dielectrophoretic force caused by the electric field generated between the first self-assembling electrode 220 and the second self-assembling electrode 222.

[0122] Here, the plurality of light-emitting diodes Del include a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode (Del1, Del2, Del3 in Figure 6) that emit a first color, a second color, and a third color, and have a first bottom pattern, a second bottom pattern, and a third bottom pattern (180, 182, 184 in Figure 6), and the plurality of self-assembling patterns 200 include a first self-assembling pattern, a second self-assembling pattern, and a third self-assembling pattern (212, 214, 216 in Figure 6) corresponding to the first bottom pattern 180, the second bottom pattern 182, and the third bottom pattern 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3.

[0123] For example, the first, second, and third colors could be red, green, and blue, respectively.

[0124] The first bottom patterns 180, second bottom patterns 182, and third bottom patterns 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are formed to be different and mutually exclusive. For example, the first bottom patterns 180, second bottom patterns 182, and third bottom patterns 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 may be formed to be different and mutually exclusive. In particular, the first bottom pattern 180 of the first light-emitting diode Del1 is flat, while the second bottom patterns 182 and third bottom patterns 184 of the second light-emitting diode Del2 and the third light-emitting diode Del3 may have different three-dimensional shapes (for example, they may be embossed and engraved, or they may be different embossed shapes, or they may be different engraved shapes). Furthermore, the first bottom pattern 180, second bottom pattern 182, and third bottom pattern 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are formed to be different in size, and may have exclusivity. In particular, the first bottom pattern 180 of the first light-emitting diode Del1 is a flat shape with the same area as the bottom surface of the first light-emitting diode Del1, while the second bottom pattern 182 and third bottom pattern 184 of the second light-emitting diode Del2 and the third light-emitting diode Del3 may be three-dimensional shapes that are the same in shape but differ in size. The size of the bottom pattern may be the height or depth of the bottom pattern, or it may be the projected area of ​​the bottom pattern in a plan view. For example, they may be embossed and incised, they may be different embossed shapes, or they may be different incised shapes. The first self-assembled pattern 212, the second self-assembled pattern 214, and the third self-assembled pattern 216 of the self-assembled substrate (or assembled substrate) 210 correspond to the first bottom pattern 180, the second bottom pattern 182, and the third bottom pattern 184, and have exclusivity such that the corresponding shape is selected.

[0125] When the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are appropriately fitted into their respective first self-assembly patterns 212, 214, and 216, the electric force applied to the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 by the electric fields of the first self-assembly electrode 220 and the second self-assembly electrode 222 becomes greater than the magnetic force applied to the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 by the magnetic field of the self-assembly device 230, and the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are stably fixed without detaching from the first self-assembly patterns 212, 214, and 216.

[0126] If the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are not properly fitted into the corresponding first self-assembly pattern 212, the second self-assembly pattern 214, and the third self-assembly pattern 216, the magnetic force applied to the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 by the magnetic field of the self-assembly device 230, and the electric fields of the first self-assembly electrode 220 and the second self-assembly electrode 222, will cause the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode The electric force applied to diode Del3 becomes greater than the force applied to the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 detach from the first self-organizing pattern 212, the second self-organizing pattern 214, and the third self-organizing pattern 216. The detached first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 then flow within the fluid 234 until they are appropriately re-fitted into the corresponding first self-organizing pattern 212, the second self-organizing pattern 214, and the third self-organizing pattern 216.

[0127] Once multiple light-emitting diodes Del are appropriately embedded in multiple self-organizing patterns 200 of the self-organizing substrate (or assembled substrate) 210, the self-organizing substrate (or assembled substrate) 210 is placed on top of the adhesive layer 160 on the upper part of the substrate 130 of the display panel 128. Then, the multiple light-emitting diodes Del located below the multiple self-organizing patterns 200 are transferred to the adhesive layer 160 of each sub-pixel SP1 to SP3 and attached.

[0128] In other embodiments, the substrate 130 on which the drive transistor Tdr is provided can be used as the self-assembled substrate (or assembled substrate) 210, and the transfer step can be omitted.

[0129] The arrangement and shape of the self-assembled substrate (or assembled substrate) 210 and the multiple light-emitting diodes Del will be described with reference to the drawings.

[0130] Figure 6 shows a plurality of light-emitting diodes and a self-assembled substrate (or assembled substrate) in a display device according to the first embodiment of the present invention. Figures 1 to 5 will be used for further explanation.

[0131] As shown in Figure 6, in the display device 110 according to the first embodiment of the present invention, the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are incorporated into a self-assembling substrate (or assembled substrate) 210 before being placed on the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3.

[0132] Each of the horizontal first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 positioned in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 positioned on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0133] The first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 (first semiconductor layer) each have a first bottom surface pattern 180, a second bottom surface pattern 182, and a third bottom surface pattern 184 of different shapes. The first bottom surface pattern 180, the second bottom surface pattern 182, and the third bottom surface pattern 184 can be formed on the bottom surface of the first semiconductor layer of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3, respectively. Here, the area of ​​the bottom surface pattern (first bottom surface pattern 180, second bottom surface pattern 182, and third bottom surface pattern 184) is the projected area of ​​the bottom surface pattern in a plan view, and the bottom surface area of ​​the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 (first semiconductor layer) is the projected area of ​​the bottom surface in a plan view. On the other hand, the embossed bottom pattern is a shape that protrudes outward from the bottom surface of the corresponding light-emitting diode, while the indented bottom pattern is a shape that is recessed inward from the bottom surface of the corresponding light-emitting diode.

[0134] For example, a first bottom surface pattern 180 having the same area as the bottom surface of the first light-emitting diode Del1 (first semiconductor layer) may be flat, a second bottom surface pattern 182 having a smaller area than the bottom surface of the second light-emitting diode Del2 (first semiconductor layer) may have a triangular embossed vertical cross-section, and a third bottom surface pattern 184 having a smaller area than the bottom surface of the third light-emitting diode Del3 (first semiconductor layer) may have a semicircular incised vertical cross-section.

[0135] The second base pattern 182 is one of the following three-dimensional shapes: a triangular pyramidal shape, a square pyramidal shape, a pentagonal pyramidal shape, a hexagonal pyramidal shape, a conical shape, or an elliptical pyramidal shape, while the third base pattern 184 can be hemispherical in three dimensions.

[0136] The self-assembled substrate (or assembled substrate) 210 has a first self-assembled pattern 212, a second self-assembled pattern 214, and a third self-assembled pattern 216, which correspond to the first bottom surface pattern 180, the second bottom surface pattern 182, and the third bottom surface pattern 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3, respectively. The area of ​​the self-assembled pattern (first self-assembled pattern 212, second self-assembled pattern 214, third self-assembled pattern 216) is the projected area of ​​the self-assembled pattern in a plan view. Furthermore, the embossed shape of the self-assembled pattern is a shape that protrudes outward from the surface of the self-assembled substrate (or assembled substrate), and the indented shape of the self-assembled pattern may be a shape that is recessed inward from the surface of the self-assembled substrate (or assembled substrate).

[0137] For example, a first self-organized pattern 212 with an area similar to the base of the first light-emitting diode Del1 may have a rectangular incised vertical cross-section, a second self-organized pattern 214 with an area smaller than the base of the second light-emitting diode Del2 may have a triangular incised vertical cross-section, and a third self-organized pattern 216 with an area smaller than the base of the third light-emitting diode Del3 may have a semicircular embossed vertical cross-section.

[0138] The first self-organizing pattern 212 is three-dimensionally square-tubular (orthogonal-hedron-like) or cylindrical; the second self-organizing pattern 214 is three-dimensionally one of the following shapes: triangular pyramidal, square pyramidal, pentagonal pyramidal, hexagonal pyramidal, conical, or elliptical pyramidal; and the third self-organizing pattern 216 may be three-dimensionally hemispherical.

[0139] Even if a portion of the second light-emitting diode Del2 and the third light-emitting diode Del3 are arranged to correspond to the first self-assembling pattern 212, the second bottom pattern 182 and the third bottom pattern 184 of the second light-emitting diode Del2 and the third light-emitting diode Del3 do not correspond to the first self-assembling pattern 212. Therefore, the second light-emitting diode Del2 and the third light-emitting diode Del3 are not fitted into the first self-assembling pattern 212 and can easily detach from it.

[0140] Even if a portion of the first light-emitting diode Del1 and the third light-emitting diode Del3 are positioned to correspond to the second self-assembling pattern 214, the first bottom pattern 180 and the third bottom pattern 184 of the first light-emitting diode Del1 and the third light-emitting diode Del3 do not correspond to the second self-assembling pattern 214. Therefore, the first light-emitting diode Del1 and the third light-emitting diode Del3 are not fitted into the second self-assembling pattern 214 and can easily detach from it.

[0141] Even if a portion of the first light-emitting diode Del1 and the second light-emitting diode Del2 are arranged to correspond to the third self-assembling pattern 216, the first bottom pattern 180 and the second bottom pattern 182 of the first light-emitting diode Del1 and the second light-emitting diode Del2 do not correspond to the third self-assembling pattern 216. Therefore, the first light-emitting diode Del1 and the second light-emitting diode Del2 are not fitted into the third self-assembling pattern 216 and can easily detach from it.

[0142] As described above, in the display device 110 according to the first embodiment of the present invention, the first bottom surface patterns 180, second bottom surface patterns 182, and third bottom surface patterns 184 of the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3 are formed in a flat, embossed, and incised shape, respectively, so as to have exclusive and distinguishable shapes, and the first self-assembly pattern 212, second self-assembly pattern 214, and third self-assembly pattern 216 of the self-assembly substrate (or assembled substrate) 210 By forming these elements in shapes corresponding to the first bottom surface patterns 180, 2, and 3 bottom surface patterns 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3, the exclusivity between the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 is improved, preventing color mixing due to incorrect assembly of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3, and ensuring high resolution.

[0143] In the first embodiment, the first, second, and third colors of the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3 are given as an example in which they correspond to blue, green, and red, respectively. However, in other embodiments, the first, second, and third colors may correspond to green, red, and blue, or red, blue, and green, respectively, or to different colors from each other.

[0144] In other embodiments, the bottom pattern of the light-emitting diode can be formed in a different shape, which will be explained with reference to the figures.

[0145] Figures 7A to 7C show the second light-emitting diode and self-assembling substrate (or assembled substrate) in a display device according to the second to fourth embodiments of the present invention, respectively, and Figures 8A to 8C show the third light-emitting diode and self-assembling substrate (or assembled substrate) in a display device according to the fifth to seventh embodiments of the present invention, respectively. Descriptions of parts that are the same as in the first embodiment are omitted.

[0146] As shown in Figure 7A, in a display device according to a second embodiment of the present invention, the horizontal second light-emitting diode Del2 incorporated into the self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 disposed in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0147] The second light-emitting diode Del2 (first semiconductor layer) has a second bottom surface pattern 182 with an area smaller than the bottom surface of the second light-emitting diode Del2. For example, the second bottom surface pattern 182 may have a semicircular relief in its vertical cross-section and be hemispherical in three dimensions.

[0148] The self-assembled substrate (or assembled substrate) 210 has a second self-assembled pattern 214 that corresponds to the second bottom surface pattern 182 and has a smaller area than the bottom surface of the second light-emitting diode Del2. For example, the second self-assembled pattern 214 may have a semicircular incised shape in its vertical cross-section and be hemispherical in three dimensions.

[0149] As shown in Figure 7B, in a display device according to a third embodiment of the present invention, a horizontal second light-emitting diode Del2 incorporated into a self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 arranged in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 arranged on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0150] The second light-emitting diode Del2 has a second base pattern 182 with an area smaller than the base surface of the second light-emitting diode Del2. For example, the second base pattern 182 has a rectangular embossed vertical cross-section and can be one of several polygonal cylindrical shapes such as triangular, square, pentagonal, or hexagonal cylindrical shapes, as well as cylindrical or elliptical cylindrical shapes.

[0151] The self-assembled substrate (or assembled substrate) 210 has a second self-assembled pattern 214 that corresponds to the second bottom surface pattern 182 and has a smaller area than the bottom surface of the second light-emitting diode Del2. For example, the second self-assembled pattern 214 has a rectangular incised shape in its vertical cross-section and can be one of several polygonal cylindrical shapes such as triangular, square, pentagonal, or hexagonal cylindrical shapes, as well as cylindrical or elliptical cylindrical shapes.

[0152] As shown in Figure 7C, in a display device according to a fourth embodiment of the present invention, a horizontal second light-emitting diode Del2 incorporated into a self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 disposed in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0153] The second light-emitting diode Del2 has a second base pattern 182 with an area smaller than the base surface of the second light-emitting diode Del2. For example, the second base pattern 182 has a trapezoidal relief in vertical cross-section and can be one of the following shapes in three dimensions: a frustum of a polygon, a frustum of a cone, or an elliptical frustum, such as a triangular frustum, a square frustum, a pentagonal frustum, a hexagonal frustum, or a heptagonal frustum.

[0154] The self-assembled substrate (or assembled substrate) 210 has a second self-assembled pattern 214 that corresponds to the second base pattern 182 and has a smaller area than the base of the second light-emitting diode Del2. For example, the second self-assembled pattern 214 has a trapezoidal incised shape in vertical cross-section and can be one of the following shapes in three dimensions: a frustum of a polygon, a frustum of a cone, or an elliptical frustum, such as a triangular frustum, a square frustum, a pentagonal frustum, a hexagonal frustum, or a heptagonal frustum.

[0155] As shown in Figure 8A, in a display device according to a fifth embodiment of the present invention, the horizontal third light-emitting diode Del3 incorporated into the self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 disposed in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0156] The third light-emitting diode Del3 (first semiconductor layer) has a third base pattern 184 with an area smaller than the base surface of the third light-emitting diode Del3. For example, the third base pattern 184 has a triangular incised shape in vertical cross-section and can be one of several polygonal pyramidal shapes such as triangular pyramidal, square pyramidal, pentagonal pyramidal, hexagonal pyramidal, conical, or elliptical pyramidal.

[0157] The self-assembled substrate (or assembled substrate) 210 has a third self-assembled pattern 216 that corresponds to the third base pattern 184 and has a smaller area than the base of the third light-emitting diode Del3. For example, the third self-assembled pattern 216 has a triangular relief in its vertical cross-section and can be one of several polygonal pyramidal shapes such as triangular pyramidal, square pyramidal, pentagonal pyramidal, hexagonal pyramidal, conical, or elliptical pyramidal shape in three dimensions.

[0158] As shown in Figure 8B, in the display device according to the sixth embodiment of the present invention, the horizontal third light-emitting diode Del3 incorporated into the self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 arranged in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 arranged on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0159] The third light-emitting diode Del3 has a third base pattern 184 with an area smaller than the base surface of the third light-emitting diode Del3. For example, the third base pattern 184 has a rectangular incised vertical cross-section and can be one of several polygonal cylindrical shapes such as triangular, square, pentagonal, or hexagonal cylindrical shapes, as well as cylindrical or elliptical cylindrical shapes.

[0160] The self-assembled substrate (or assembled substrate) 210 has a third self-assembled pattern 216 that corresponds to the third bottom surface pattern 184 and has an area smaller than the bottom surface of the third light-emitting diode Del3. For example, the third self-assembled pattern 216 has a rectangular embossed vertical cross-section and can be one of the polygonal cylindrical shapes such as triangular, square, pentagonal, or hexagonal cylindrical shapes, as well as cylindrical or elliptical cylindrical shapes.

[0161] As shown in Figure 8C, in the display device according to the seventh embodiment of the present invention, the horizontal third light-emitting diode Del3 incorporated into the self-assembled substrate (or assembled substrate) 210 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 arranged in the mesa region of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 arranged on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0162] The third light-emitting diode Del3 has a third base pattern 184 with an area smaller than the base surface of the third light-emitting diode Del3. For example, the third base pattern 184 has a trapezoidal incision in vertical cross-section and can be one of the following three-dimensional shapes: a frustum of a polygon, a frustum of a cone, or an elliptical frustum, such as a triangular frustum, a square frustum, a pentagonal frustum, a hexagonal frustum, or a heptagonal frustum.

[0163] The self-assembled substrate (or assembled substrate) 210 has a third self-assembled pattern 216 that corresponds to the third base pattern 184 and has a smaller area than the base of the third light-emitting diode Del3. For example, the third self-assembled pattern 216 has a trapezoidal relief in vertical cross-section and can be one of the following shapes in three dimensions: a frustum of a polygon, a frustum of a cone, or an elliptical frustum, such as a triangular frustum, a square frustum, a pentagonal frustum, a hexagonal frustum, or a heptagonal frustum.

[0164] In the first to seventh embodiments, the second base pattern 182 is embossed and the third base pattern 184 is incised. However, in other embodiments, the second base pattern 182 and the third base pattern 184 may be different embossed or different incised.

[0165] In the first embodiment, one light-emitting diode has one bottom pattern, while in other embodiments, one light-emitting diode may have two or more bottom patterns, which will be explained with reference to the figures.

[0166] Figures 9A to 9D show the third bottom surface pattern of the third light-emitting diode in the display device according to the eighth to eleventh embodiment of the present invention, respectively. Descriptions of parts that are the same as those in the first to seventh embodiments are omitted.

[0167] As shown in Figure 9A, in the display device according to the eighth embodiment of the present invention, the third light-emitting diode Del3 has a plurality of third-first bottom surface patterns 184a with an area smaller than the bottom surface of the third light-emitting diode Del3, for example, four third-first bottom surface patterns 184a may each have a circular shape with a first diameter d1 in its horizontal cross-section.

[0168] As shown in Figure 9B, in the display device according to the ninth embodiment of the present invention, the third light-emitting diode Del3 has a plurality of third-second bottom surface patterns 184b having an area smaller than the bottom surface of the third light-emitting diode Del3. For example, the nine third-second bottom surface patterns 184b may each be circular in shape with a second diameter d2 having a horizontal cross-section smaller than the first diameter d1.

[0169] As shown in Figure 9C, in the display device according to the 10th embodiment of the present invention, the third light-emitting diode Del3 has a plurality of third-first bottom surface patterns 184a with an area smaller than the bottom surface of the third light-emitting diode Del3, for example, the three third-first bottom surface patterns 184a may each have a circular shape with a first diameter d1 in its horizontal cross-section.

[0170] As shown in Figure 9D, in the display device according to the 11th embodiment of the present invention, the third light-emitting diode Del3 has a plurality of third-first bottom patterns 184a and a plurality of third-second bottom patterns 184b having an area smaller than the bottom surface of the third light-emitting diode Del3. For example, the two third-first bottom patterns 184a each have a circular shape with a first diameter d1 in their horizontal cross-section, and the three third-second bottom patterns 184b each have a circular shape with a second diameter d2 that is smaller than the first diameter d1 in their horizontal cross-section.

[0171] In the eighth to eleventh embodiments shown in Figures 9A to 9D, the third light-emitting diode Del3 is given as an example in which it has a plurality of third bottom patterns 184, but in other embodiments, the second light-emitting diode Del2 may have a plurality of second bottom patterns 182.

[0172] In other words, the second light-emitting diode Del2 may have multiple second base patterns of different or identical sizes, and the third light-emitting diode Del3 may have multiple third base patterns of different or identical sizes. In this case, the exclusivity between the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 is further improved, and color mixing due to misassembly of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 is prevented. The size of the base pattern may be the height or depth of the base pattern, or it may be the projected area of ​​the base pattern in a plan view.

[0173] In other embodiments, the light-emitting diode may be vertical, which will be explained with reference to the figures.

[0174] Figure 10 shows a plurality of light-emitting diodes and a self-assembled substrate (or assembled substrate) in a display device according to the twelfth embodiment of the present invention. Descriptions of parts that are the same as those in the first to eleventh embodiments are omitted.

[0175] As shown in Figure 10, in the display device according to the twelfth embodiment of the present invention, the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 are incorporated into a self-assembling substrate (or assembled substrate) 210 before being placed on the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3.

[0176] Each of the vertically oriented first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3 includes a sequentially stacked first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166, a first electrode 168 disposed on the lower surface of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0177] The first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3 (first semiconductor layer) each have a first bottom surface pattern 180, a second bottom surface pattern 182, and a third bottom surface pattern 184, respectively, and the first bottom surface pattern 180, the second bottom surface pattern 182, and the third bottom surface pattern 184 are formed in different shapes and are mutually exclusive. The first bottom surface pattern 180, the second bottom surface pattern 182, and the third bottom surface pattern 184 can each be formed on the bottom surface of the first semiconductor layer of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3.

[0178] For example, a first bottom surface pattern 180 having the same area as the bottom surface of the first light-emitting diode Del1 (first semiconductor layer) may be flat, a second bottom surface pattern 182 having a smaller area than the bottom surface of the second light-emitting diode Del2 (first semiconductor layer) may have a triangular embossed vertical cross-section, and a third bottom surface pattern 184 having a smaller area than the bottom surface of the third light-emitting diode Del3 (first semiconductor layer) may have a semicircular incised vertical cross-section.

[0179] Furthermore, the first electrode 168 in the second light-emitting diode Del2 and the third light-emitting diode Del3 can be arranged in a ring shape with an opening on the lower surface of the first semiconductor layer 162. In this case, the second bottom surface pattern 182 and the third bottom surface pattern 184 can be arranged in the ring-shaped opening of the first electrode 168.

[0180] The second base pattern 182 is one of the following three-dimensional shapes: a triangular pyramidal shape, a square pyramidal shape, a pentagonal pyramidal shape, a hexagonal pyramidal shape, a conical shape, or an elliptical pyramidal shape, while the third base pattern 184 can be hemispherical in three dimensions.

[0181] The self-assembled substrate (or assembled substrate) 210 has a first self-assembly pattern 212, a second self-assembly pattern 214, and a third self-assembly pattern 216, which correspond to the first bottom pattern 180, second bottom pattern 182, and third bottom pattern 184 of the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3, respectively.

[0182] For example, a first self-organized pattern 212 having an area similar to or substantially the same as the base of the first light-emitting diode Del1 may have a rectangular incised vertical cross-section; a second self-organized pattern 214 having an area smaller than the base of the second light-emitting diode Del2 may have a triangular incised vertical cross-section; and a third self-organized pattern 216 having an area smaller than the base of the third light-emitting diode Del3 may have a semicircular embossed vertical cross-section.

[0183] The first self-organizing pattern 212 is three-dimensionally square-tubular (orthogonal-hedron-like) or cylindrical; the second self-organizing pattern 214 is three-dimensionally one of the following shapes: triangular pyramidal, square pyramidal, pentagonal pyramidal, hexagonal pyramidal, conical, or elliptical pyramidal; and the third self-organizing pattern 216 may be three-dimensionally hemispherical.

[0184] Furthermore, the second base pattern 182 and the second self-organizing pattern 214 may have the shapes shown in Figures 7A to 7C, and the third base pattern 184 and the third self-organizing pattern 216 may have the shapes shown in Figures 8A to 8C. On the other hand, similar to Figures 9A to 9D, the second light-emitting diode Del2 may have multiple second base patterns of different or identical sizes, and the third light-emitting diode Del3 may have multiple third base patterns of different or identical sizes.

[0185] Even if a portion of the second light-emitting diode Del2 and the third light-emitting diode Del3 are positioned to correspond to the first self-assembling pattern 212, the second bottom pattern 182 and the third bottom pattern 184 of the second light-emitting diode Del2 and the third light-emitting diode Del3 do not correspond to the first self-assembling pattern 212. Therefore, the second light-emitting diode Del2 and the third light-emitting diode Del3 are not fitted into the first self-assembling pattern 212 and can easily detach from it.

[0186] Even if a portion of the first light-emitting diode Del1 and the third light-emitting diode Del3 are positioned to correspond to the second self-assembling pattern 214, the first bottom pattern 180 and the third bottom pattern 184 of the first light-emitting diode Del1 and the third light-emitting diode Del3 do not correspond to the second self-assembling pattern 214. Therefore, the first light-emitting diode Del1 and the third light-emitting diode Del3 are not fitted into the second self-assembling pattern 214 and can easily detach from it.

[0187] Even if a portion of the first light-emitting diode Del1 and the second light-emitting diode Del2 are arranged to correspond to the third self-assembling pattern 216, the first bottom pattern 180 and the second bottom pattern 182 of the first light-emitting diode Del1 and the second light-emitting diode Del2 do not correspond to the third self-assembling pattern 216. Therefore, the first light-emitting diode Del1 and the second light-emitting diode Del2 are not fitted into the third self-assembling pattern 216 and can easily detach from it.

[0188] As described above, in the display device according to the twelfth embodiment of the present invention, the first bottom surface patterns 180, second bottom surface patterns 182, and third bottom surface patterns 184 of the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3 are formed in a flat, embossed, and incised shape, respectively, and the first self-organizing pattern 212, second self-organizing pattern 214, and third self-organizing pattern 216 of the self-organizing substrate (or assembled substrate) 210 are formed in a shape corresponding to the first bottom surface patterns 180, second bottom surface patterns 182, and third bottom surface patterns 184 of the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3. This improves the exclusivity between the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3, prevents color mixing due to incorrect assembly of the first light-emitting diode Del1, second light-emitting diode Del2, and third light-emitting diode Del3, and ensures high resolution.

[0189] In the first to twelfth embodiments, the first base pattern 180, the second base pattern 182, and the third base pattern 184 are formed in different shapes and are mutually exclusive. However, in other embodiments, the sizes of the first base pattern 180, the second base pattern 182, and the third base pattern 184 may differ, improving mutual exclusivity between the first light-emitting diode Del1, the second light-emitting diode Del2, and the third light-emitting diode Del3. For example, the first base pattern 180 of the first light-emitting diode Del1 is a flat shape with the same area as the base surface area of ​​the first light-emitting diode Del1, while the second base pattern 182 and the third base pattern 184 of the second light-emitting diode Del2 and the third light-emitting diode Del3 may be three-dimensional shapes that are the same in shape but differ in size.

[0190] In other embodiments, a functional material layer can be placed on the bottom surface pattern of the light-emitting diode, which will be explained with reference to the figures.

[0191] Figures 11A and 11B show the third light-emitting diode in the display device according to the 13th and 14th embodiments of the present invention. Descriptions of parts that are the same as those in the 1st to 12th embodiments are omitted.

[0192] As shown in Figure 11A, in the display device according to the 13th embodiment of the present invention, the vertical third light-emitting diode Del3 includes a first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166 that are sequentially stacked, a first electrode 168 disposed on the lower surface of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0193] The third light-emitting diode Del3 has a third bottom surface pattern 184 with an area smaller than the bottom surface of the third light-emitting diode Del3, and the third bottom surface pattern 184 may have a semicircular incised vertical cross-section and be hemispherical in three dimensions.

[0194] A wavelength conversion layer 186 containing multiple wavelength conversion materials 186a is arranged inside the third bottom surface pattern 184.

[0195] For example, the multiple wavelength conversion materials 186a may be at least one of the following: quantum dots (QDs) and nano-optical materials (NOMs).

[0196] A first light L1 of a first wavelength is emitted from the active layer 164 of the third light-emitting diode Del3. When the first light L1 passes through the wavelength conversion layer 186, its wavelength is converted, and a second light L2 of a second wavelength, different from the first wavelength, may be emitted from the third light-emitting diode Del3.

[0197] As described above, in the display device according to the 13th embodiment of the present invention, the wavelength of light emitted from the third light-emitting diode Del3 can be varied by arranging the wavelength conversion layer 186 on the engraved third bottom surface pattern 184 of the third light-emitting diode Del3.

[0198] As shown in Figure 11B, in the display device according to the 14th embodiment of the present invention, the vertical third light-emitting diode Del3 includes a first semiconductor layer 162, an active layer 164, and a second semiconductor layer 166 that are sequentially stacked, a first electrode 168 disposed on the lower surface of the first semiconductor layer 162 and connected to the first semiconductor layer 162, and a second electrode 170 disposed on the upper surface of the second semiconductor layer 166 and connected to the second semiconductor layer 166.

[0199] The third light-emitting diode Del3 has a third bottom surface pattern 184 with an area smaller than the bottom surface of the third light-emitting diode Del3, and the third bottom surface pattern 184 may have a semicircular incised vertical cross-section and be hemispherical in three dimensions.

[0200] A lens layer 188 is positioned inside the third bottom pattern 184.

[0201] For example, the lens layer 188 can be formed from a transparent insulating material having a refractive index greater than that of the first semiconductor layer 162.

[0202] A first light L1 of a first wavelength is emitted from the active layer 164 of the third light-emitting diode Del3, and the first light L1 is refracted towards the bottom surface of the third light-emitting diode Del3 at the interface between the first semiconductor layer 162 and the lens layer 188, and a second light L2 focused from the third light-emitting diode Del3 may be emitted.

[0203] As described above, in the display device according to the 14th embodiment of the present invention, by arranging the lens layer 188 on the engraved third bottom surface pattern 184 of the third light-emitting diode Del3, the light emitted from the third light-emitting diode Del3 can be concentrated and the light emission efficiency can be improved.

[0204] Figures 11A and 11B show a vertical third light-emitting diode Del3 as an example, but the wavelength conversion layer or lens layer can be similarly applied to horizontal light-emitting diodes.

[0205] As described above, in the display device according to the first to fourteenth embodiments of the present invention, the first, second, and third bottom patterns of the first, second, and third light-emitting diodes are each formed in different shapes (e.g., flat, embossed, or incised) or of different sizes, and the first, second, and third self-assembly patterns of the self-assembly substrate (or assembled substrate) are each formed in a shape corresponding to the first, second, and third bottom patterns, thereby improving the exclusivity between the first, second, and third light-emitting diodes, preventing color mixing due to incorrect assembly of the first, second, and third light-emitting diodes, and ensuring high resolution.

[0206] As described above with reference to preferred embodiments of the present invention, a person with ordinary skill in the relevant art will understand that the present invention can be modified or altered in various ways without departing from the technical idea and scope of the invention as described in the claims. [Explanation of Symbols]

[0207] 110...Display device Del1...First light-emitting diode Del2... Second Light-Emitting Diode Del3...Third Light-Emitting Diode 180...First base pattern 182...Second base pattern 184...Third base pattern 210... Self-assembled substrate (or assembled substrate) 212...First Self-Organizing Pattern 214...Second Self-Organizing Pattern 216...Third Self-Organizing Pattern

Claims

1. circuit board and A first sub-pixel, a second sub-pixel, and a third sub-pixel are arranged on the upper part of the substrate, The first sub-pixel, the second sub-pixel, and the third sub-pixel each include a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode, each emitting light of a first color, a second color, and a third color, respectively. The first light-emitting diode, the second light-emitting diode, and the third light-emitting diode each have a first bottom pattern, a second bottom pattern, and a third bottom pattern, The first bottom pattern, the second bottom pattern, and the third bottom pattern are formed to be different from each other and are mutually exclusive display devices.

2. The display device according to claim 1, wherein the first bottom pattern, the second bottom pattern, and the third bottom pattern are formed in different shapes and are mutually exclusive.

3. The display device according to claim 2, wherein the first bottom pattern is flat, and the second bottom pattern and the third bottom pattern have different three-dimensional shapes from each other.

4. The display device according to claim 3, wherein the second bottom pattern and the third bottom pattern are embossed and incised, respectively.

5. The display device according to claim 3, wherein the second bottom pattern and the third bottom pattern are different in relief or different intaglio.

6. The display device according to claim 3, wherein the area of ​​the first bottom pattern is the same as the bottom area of ​​the first light-emitting diode.

7. The area of ​​the second bottom pattern is smaller than the bottom area of ​​the second light-emitting diode. The area of ​​the third bottom pattern is smaller than the bottom area of ​​the third light-emitting diode. The display device according to claim 3, wherein the second base pattern and the third base pattern each have one vertical cross-section from among a semicircular shape, a triangular shape, a rectangular shape, and a trapezoidal shape.

8. The display device according to claim 3, wherein the three-dimensional shape of the second base pattern and the third base pattern is one of the following: hemispherical, polygonal pyramidal, conical, elliptical conical, polygonal cylindrical, cylindrical, elliptical cylindrical, polygonal frustoconical, frustoconical, and elliptical frustoconical.

9. The second light-emitting diode has a plurality of second bottom surface patterns that are the same or different in size from one another. The display device according to claim 1, wherein the third light-emitting diode has a plurality of third bottom patterns that are the same or different in size from one another.

10. The third bottom pattern is incised, The third bottom pattern includes a wavelength conversion layer containing a wavelength conversion material. The display device according to claim 2, wherein the wavelength conversion material comprises at least one of quantum dots and nano-optical materials.

11. A lens layer is arranged in the third bottom pattern. The display device according to claim 2, wherein the lens layer includes a transparent insulating material having a refractive index greater than that of the first semiconductor layer of the third light-emitting diode.

12. Each of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode is, The first semiconductor layer, An active layer disposed on top of the first semiconductor layer, A second semiconductor layer is disposed on top of the active layer, A first electrode connected to the first semiconductor layer, The second electrode connected to the second semiconductor layer is included, The first bottom pattern, the second bottom pattern, and the third bottom pattern are formed on the bottom surfaces of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode, respectively. The first electrode is located below the bottom surface of the first semiconductor layer. The second electrode is positioned on the upper part of the upper surface of the second semiconductor layer. Each of the first electrodes of the second light-emitting diode and the third light-emitting diode is ring-shaped with an opening, The light-emitting diode according to claim 1, wherein the second bottom pattern and the third bottom pattern are each arranged in the opening.

13. The light-emitting diode according to claim 1, wherein the first bottom pattern, the second bottom pattern, and the third bottom pattern are formed to be different from each other and mutually exclusive.

14. The first bottom pattern is flat and has the same area as the bottom surface area of ​​the first light-emitting diode. The light-emitting diode according to claim 13, wherein the second bottom pattern and the third bottom pattern are three-dimensional shapes that are the same in shape but differ in size.

15. The first semiconductor layer, An active layer disposed on top of the first semiconductor layer, A second semiconductor layer is disposed on top of the active layer, A first electrode connected to the first semiconductor layer, The second electrode connected to the second semiconductor layer is included, The first semiconductor layer is a light-emitting diode having one bottom surface pattern, either embossed or incised.

16. The light-emitting diode according to claim 15, wherein the area of ​​the bottom pattern is smaller than the bottom area of ​​the first semiconductor layer, and the bottom pattern has one vertical cross-section from among a semicircular shape, a triangular shape, a rectangular shape, and a trapezoidal shape.

17. The light-emitting diode according to claim 15, wherein the base pattern is one of the following in three dimensions: hemispherical, polygonal pyramidal, conical, elliptical conical, polygonal cylindrical, cylindrical, elliptical cylindrical, frustum of polygonal pyramidal, frustum of cone, or frustum of elliptical pyramidal.

18. The first electrode is located at the bottom of the bottom surface of the first semiconductor layer, and the second electrode is located at the top of the top surface of the second semiconductor layer. The first electrode is ring-shaped with an opening, The light-emitting diode according to claim 15, wherein the bottom pattern is arranged in the opening.

19. The aforementioned bottom pattern is incised, The bottom surface pattern includes a wavelength conversion layer containing a wavelength conversion material. The light-emitting diode according to claim 15, wherein the wavelength conversion material comprises at least one of quantum dots and nano-optical materials.

20. The aforementioned bottom pattern is incised, A lens layer is arranged in the bottom surface pattern. The light-emitting diode according to claim 15, wherein the lens layer includes a transparent insulating material having a refractive index greater than that of the first semiconductor layer.

21. The light-emitting diode according to claim 15, wherein the first semiconductor layer has a plurality of bottom patterns of the same or different sizes.

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