Photosensitive resin composition, cured product, method for manufacturing the cured product, and semiconductor device and display device using the cured product.

Abstract

To provide a photosensitive resin composition that enables both high sensitivity characteristics and the formation of good step patterns by halftone exposure. [Solution] A photosensitive resin composition comprising (A) at least one resin selected from a polyimide represented by formula (1), a polybenzoxazole precursor represented by formula (2), and a polyimide precursor represented by formula (11), and (B) a photoacid generator. TIFF2026100808000042.tif28170 TIFF2026100808000043.tif28170 TIFF2026100808000044.tif31170

Description

[Technical Field] 【0001】 The present invention relates to a photosensitive resin composition, a cured product, a method for producing the cured product, and a semiconductor device and a display device using the cured product. [Background technology] 【0002】 Polyimides and polybenzoxazoles, which have excellent heat resistance, electrical insulation properties, and mechanical properties, are widely used in surface protective films and interlayer insulating films used in semiconductor devices, as well as in insulating layers of organic electroluminescent devices and planarization films of TFT (thin-film transistor) substrates. In recent years, photosensitive resin compositions have been used in which photosensitive properties are imparted to these resins themselves or their precursors (hereinafter, these photosensitive resin compositions will be referred to as polyimide-based photosensitive resin compositions). By using polyimide-based photosensitive resin compositions, the pattern processing process can be simplified, and the complex manufacturing process can be shortened. 【0003】 In particular, positive-type materials, in which the exposed area is readily soluble in the developer and can be patterned, have the advantage of being able to process higher-resolution patterns. Examples include polyimides, polybenzoxazoles, polyimide precursors, or polybenzoxazole precursors to which quinone diazide compounds have been added (see, for example, Patent Document 1). Furthermore, in recent years, in order to aim for even higher sensitivity, polyimides or polybenzoxazole precursors containing protecting groups that can be dissociated in the presence of acid to which photoacid generators have been added (see, for example, Patent Documents 2 and 3). 【0004】 In the process of forming electrodes in semiconductors or organic EL layers in organic EL displays, where a deposition mask is brought into contact with a pattern of polyimide or polybenzoxazole, and metal or organic EL compounds are deposited into the pattern openings, a large contact area between the pattern surface and the deposition mask can lead to particle generation and a decrease in the yield of semiconductors and display panels. Furthermore, poor adhesion and moisture intrusion caused by deposits on the deposition mask can lead to degradation of semiconductor elements and EL light-emitting elements. Therefore, in order to reduce the contact area on the pattern surface, a method has been proposed to form a stepped pattern (hereinafter referred to as a stepped pattern) by forming a polyimide-based photosensitive resin composition pattern with a smaller dimensional width on top of a polyimide-based photosensitive resin composition pattern. However, this method has the problem of increasing process time due to the increased number of steps and causing a decrease in device yield. As a method to solve these problems, a method has been proposed in which a stepped pattern is formed in a single development by exposure using a halftone photomask having a light-transmitting portion, a light-blocking portion, and a semi-transparent portion that transmits 1 to 99% of the light of the light-transmitting portion (hereinafter referred to as halftone exposure) (see, for example, Patent Document 4). By forming the stepped pattern in a single step, the contact area with the deposition mask can be reduced without increasing the process time. [Prior art documents] [Patent Documents] 【0005】 [Patent Document 1] Japanese Patent Publication No. 2011-180473 [Patent Document 2] Japanese Patent Publication No. 2011-221173 [Patent Document 3] Japanese Patent Publication No. 2006-349700 [Patent Document 4] Japanese Patent Publication No. 2005-322564 [Overview of the project] [Problems that the invention aims to solve] 【0006】 However, in order to achieve high sensitivity, when a photoacid generator is added to a polyimide or polybenzoxazole precursor containing a protecting group that can be dissociated in the presence of an acid, the change in the dissolution rate of the exposed portion due to the exposure amount is larger than that of the quinonediazide compound added. Therefore, the region of the semi-translucent portion by halftone exposure is dissolved in the same manner as the translucent portion and no film remains. As a result, there is a problem that it is difficult to form a stepped pattern. 【Means for Solving the Problems】 【0007】 In order to solve the above problems, the present invention has the following constitution. <1> A photosensitive resin composition containing at least one resin selected from a polyimide represented by formula (1), a polybenzoxazole precursor represented by formula (2), and a polyimide precursor represented by formula (11), and (B) a photoacid generator. 【0008】 【Chemical Formula】 【0009】 In formula (1), R 1 and R 2 represent tetravalent organic groups having 4 to 50 carbon atoms, which may be the same or different. R 3 represents a trivalent to hexavalent organic group having 3 to 50 carbon atoms. R 4 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid dissociable group having 3 to 50 carbon atoms, and a1 R 4 may be the same or different. A represents an oxygen atom or a sulfur atom, and a1 represents an integer of 1 to 4. R 5 represents a divalent organic group having 2 to 50 carbon atoms that does not contain R 3 -(AR 4 )a1. n1 is an integer of 1 or more, n2 is an integer of 0 or more, and n1 + n2 is an integer of 1 to 300. When all R 4 in formula (1) are set to 100 mol%, the total ratio m 4 of R 11 that is an acid dissociable group represented by formula (3) or formula (4) is 100 ≥ m11 >0 and R 4 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 12 (mol%) is 100 ≥ m 12 >0 【0010】 [ka] 【0011】 In formula (2), R 6 and R 7 R represents a divalent organic group with 4 to 50 carbon atoms, and may be the same or different. 8 R represents a 3-6 valent organic group with 3-50 carbon atoms. 9 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 2 R 9 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a2 represents an integer from 1 to 4. 10 R has 2 to 50 carbon atoms. 8 -(AR 9 ) represents a divalent organic group that does not contain a2. n3 is an integer greater than or equal to 1, n4 is an integer greater than or equal to 0, and n3+n4 is an integer between 1 and 300. All R in equation (2) 9 When R is set to 100 mol%, 9 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 21 (mol%) is 100 ≥ m 21 >0 and R 9 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 22 (mol%) is 100 ≥ m 22 >0 【0012】 [ka] 【0013】 (In formula (11), R 32 and R 33R represents a trivalent or tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 34 R represents a 3-6 valent organic group with 3-50 carbon atoms. 35 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 5 R 35 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a5 represents an integer from 1 to 4. 36 R has 2 to 50 carbon atoms. 34 -(AR 35 ) Represents a divalent organic group that does not contain a5. R 37 and R 38 represents a hydrogen atom and an alkyl group with 1 to 6 carbon atoms, and 6 R 37 , and a7 R 38 They may be the same or different. 6、 And a7 represents an integer of 1 or 2. 17 n is 1 or greater, 18 n is a non-negative integer, and n 17 +n 18 The integer is between 1 and 300. All R in equation (11) 35 When R is set to 100 mol%, 35 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 31 (mol%) is 100 ≥ m 31 >0 and R 35 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 32 (mol%) is 100 ≥ m 32 >0. 【0014】 [ka] 【0015】 In equations (3) and (4), R 11 and R 12 Each of these independently represents an alkyl group having 1 to 6 carbon atoms. 13* represents an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or an alkoxyalkyl group with 2 to 8 carbon atoms. p and q each independently represent integers from 0 to 2, and * represents a bond point. 【0016】 [ka] 【0017】 In formula (5), R 14 represents an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or an alkoxyalkyl group with 2 to 8 carbon atoms. r and s each independently represent an integer between 0 and 2. In equations (6) and (7), R 15 ~R 20 Each of these independently represents an alkyl group with 1 to 6 carbon atoms. * represents a bond point. <2> (A) The resin is a polyimide represented by formula (1) and / or a polybenzoxazole precursor represented by formula (2). <1> The photosensitive resin composition described in [reference]. <3> m 11 +m 12 (mol%), 10≦m 11 +m 12 ≤ 95, m 21 +m 22 (mol%), 10≦m 21 +m 22 ≤ 95, m 31 +m 32 (mol%), 10≦m 31 +m 32 ≤ 95 <1> or <2> The photosensitive resin composition described in [reference]. <4> m 11 +m 12 When this is set to 100 mol%, the above m 11 (mol%) and m 12 (mol%) is 1 <m 11 / m 12 ≤ 9, and the above m 21 +m 22 When this is set to 100 mol%, the above m 21 (mol%) and m 22 (mol%) is 1 <m21 / m 22 is ≦ 9, and when the above m 31 +m 32 is taken as 100 mol%, the above m 31 (mol%) and m 32 (mol%) are such that 1 < m 31 / m 32 ≦ 9. The photosensitive resin composition according to any one of <1> to <3>. <5> Further, a photosensitive resin composition according to any one of <1> to <4>, comprising (C) a thermal crosslinking agent. <6> The photosensitive resin composition according to any one of <1> to <5>, wherein the formula (1), the formula (2), and the formula (11) have a terminal structure, and the terminal structure is a structure containing a thermally crosslinkable group. <7> R in the formula (1) 3 -(AR 4 )a1, R in the formula (2) 8 -(AR 9 )a2, and R in the formula (11) 34 -(AR 35 )a5 are groups represented by the formula (8). The photosensitive resin composition according to any one of <1> to <6>. 【0018】 【Chemical formula】 【0019】 In the formula (8), A represents the same meaning as the same symbol in the formula (1), R 39 and R 40 represent the same meaning as R in the formula (1) 4 , R in the formula (z) 9 , and R in the formula (11) 35 . R 21 and R 22 each independently represent a monovalent organic group having 1 to 6 carbon atoms, t1 and u1 each independently represent an integer of 0 to 4, and X 1a3 represents a direct bond, an aliphatic group with 1 to 10 carbon atoms, an alicyclic group with 1 to 10 carbon atoms, an ether group, a thioether group, or a 9H-fluorene-9,9-diyl group. a3 and a4 each independently represent integers from 0 to 2, satisfying 1 ≤ (a3 + a4) ≤ 4, and * represents a bond point. <8> In equation (1) above, R 1 and / or R 2 However, it is a tetravalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or alicyclic structure. In equation (2) above, R 6 and / or R 7 However, it is a divalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or alicyclic structure. In equation (11) above, R 32 and / or R 33 However, it is a tetravalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or alicyclic structure. <1> ~ <7> A photosensitive resin composition as described in any of the above. <9> The (B) photoacid generator comprises an oximesulfonate compound and / or an imidosulfonate compound. <1> ~ <8> A photosensitive resin composition as described in any of the above. <10> (A) At least one resin selected from polyimide, polybenzoxazole precursor and polyimide precursor, and (B) Photoacid generator A photosensitive resin composition comprising, The polyimide, polybenzoxazole precursor and polyimide precursor have hydroxyl groups protected by acid-dissociable groups and / or mercapto groups protected by acid-dissociable groups. A photosensitive resin composition comprising two or more acid-dissociable groups with different deprotection rates by acid as the aforementioned acid-dissociable groups. <11> The polyimide, polybenzoxazole precursor and polyimide precursor contain a diamine residue having an acid-dissociable hydroxyl group and / or an acid-dissociable mercapto group. <10> The photosensitive resin composition described in [reference]. <12> <1> ~ <11> A photosensitive resin sheet obtained by forming a photosensitive resin composition described in any of the above onto a support in the form of a sheet. <13> <1> ~ <11> A cured product obtained by curing a photosensitive resin composition as described in any of the above. <14> Having a stepped pattern, <13> The cured product described above. <15> a) <1> ~ <11> A step of applying and drying a photosensitive resin composition described in any of the above onto a substrate to form a photosensitive resin film, or <12> A step of heat-pressing the photosensitive resin composition of the present invention onto a substrate using the photosensitive resin sheet described above, b) Exposing at least a portion of the photosensitive resin film or the thermocompressed photosensitive resin composition through a halftone photomask. c) A step of developing the exposed photosensitive resin film or the exposed thermocompressed photosensitive resin composition with an alkaline aqueous solution, d) A step of heat-treating the developed photosensitive resin film or the developed thermocompressed photosensitive resin composition, A method for manufacturing a cured product having a stepped pattern in this order. <16> <13> or <14> A semiconductor device having the cured product described above. <17> <13> or <14> A display device having the cured product described above. [Effects of the Invention] 【0020】 The photosensitive resin composition of the present invention enables both high sensitivity characteristics and the formation of good step patterns by halftone exposure. [Brief explanation of the drawing] 【0021】 [Figure 1] This is a schematic diagram showing the pattern of the photosensitive resin described in the present invention. [Figure 2] This is a schematic diagram showing the step pattern of the photosensitive resin described in the present invention. [Figure 3] This is a schematic diagram illustrating an example of a step pattern according to the present invention. [Figure 4] This is a schematic diagram showing the halftone exposure section of the present invention. [Modes for carrying out the invention] 【0022】 The photosensitive resin composition of the present invention comprises (A) at least one resin selected from a polyimide represented by formula (1), a polybenzoxazole precursor represented by formula (2), and a polyimide precursor represented by formula (11). and (B) A photosensitive resin composition containing a photoacid generator. 【0023】 [ka] 【0024】 In formula (1), R 1 and R 2 R represents a tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 3 R represents a 3-6 valent organic group with 3-50 carbon atoms. 4 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid-dissociable group having 3 to 50 carbon atoms, and 1 R 4 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a1 represents an integer from 1 to 4. 5 R has 2 to 50 carbon atoms. 3 -(AR 4 ) represents a divalent organic group that does not contain a1. n1 is an integer greater than or equal to 1, n2 is an integer greater than or equal to 0, and n1+n2 is an integer between 1 and 300. All R in equation (1) 4 When R is set to 100 mol%, 4 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 11 (mol%) is 100 ≥ m 11 >0 and R 4 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 12 (mol%) is 100 ≥ m 12 >0 【0025】 [ka] 【0026】 In formula (2), R 6 and R 7 R represents a divalent organic group with 4 to 50 carbon atoms, and may be the same or different. 8 R represents a 3-6 valent organic group with 3-50 carbon atoms. 9 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 2 R 9 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a2 represents an integer from 1 to 4. 10 R has 2 to 50 carbon atoms. 8 -(AR 9 ) represents a divalent organic group that does not contain a2. n3 is an integer greater than or equal to 1, n4 is an integer greater than or equal to 0, and n3+n4 is an integer between 1 and 300. All R in equation (2) 9 When R is set to 100 mol%, 9 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 21 (mol%) is 100 ≥ m 21 >0 and R 9 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 22 (mol%) is 100 ≥ m 22 >0 【0027】 [ka] 【0028】 In formula (11), R 32 and R 33 R represents a trivalent or tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 34 R represents a 3-6 valent organic group with 3-50 carbon atoms. 35 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 5 R 35 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a5 represents an integer from 1 to 4.36 R has 2 to 50 carbon atoms. 34 -(AR 35 ) Represents a divalent organic group that does not contain a5. R 37 and R 38 represents a hydrogen atom and an alkyl group with 1 to 6 carbon atoms, and 6 R 37 , and a7 R 38 They may be the same or different. 6、 And a7 represents an integer of 1 or 2. 17 n is 1 or greater, 18 n is a non-negative integer, and n 17 +n 18 The integer is between 1 and 300. All R in equation (11) 35 When R is set to 100 mol%, 35 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 31 (mol%) is 100 ≥ m 31 >0 and R 35 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 32 (mol%) is 100 ≥ m 32 >0 【0029】 [ka] 【0030】 In equations (3) and (4), R 11 and R 12 Each of these independently represents an alkyl group having 1 to 6 carbon atoms. 13 * represents an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or an alkoxyalkyl group with 2 to 8 carbon atoms. p and q each independently represent integers from 0 to 2, and * represents a bond point. 【0031】 [ka] 【0032】 In formula (5), R 14represents an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or an alkoxyalkyl group with 2 to 8 carbon atoms. r and s each independently represent an integer between 0 and 2. In equations (6) and (7), R 15 ~R 20 Each of these independently represents an alkyl group with 1 to 6 carbon atoms. * represents a bond point. 【0033】 The photosensitive resin composition of the present invention contains the (B) photoacid generator, and by exposure at a wavelength corresponding to the contained photoacid generator, acid can be generated in the composition. Since this acid promotes solubility in alkaline aqueous solutions, the photosensitive resin composition of the present invention can form a positive-type relief pattern in which the exposed area dissolves. Furthermore, R in equation (1) 4 , R in equation (2) above 9 , and R in formula (11) 35 If the structure is such that an organic group is removed by the action of an acid to become a hydrogen atom, then when A in formulas (1), (2), and (11) is an oxygen atom, a hydroxyl group is generated in the resin by exposure, and when A in formulas (1), (2), and (11) is a sulfur atom, a mercapto group is generated in the resin by exposure. Since hydroxyl groups and mercapto groups act as soluble groups in alkaline aqueous solutions, solubility in alkaline aqueous solutions is further enhanced, allowing for the formation of more sensitive positive relief patterns. 【0034】 Therefore, the structure described above, in which an organic group is removed by the action of an acid to become a hydrogen atom, is called an "acid-dissociable group." 4 , R 9 , and, R 35 If is an acid-dissociable group, then -AR in formula (1) 4 The structure of -AR in formula (2) above 9 The structure of, and -AR in formula (11) 35 The structure is sometimes referred to as a "hydroxyl group or mercapto group protected by an acid-dissociating group." Furthermore, R 4 , R 9, and, R 35 If is an acid-dissociable group, then -AR in formula (1) 4 Structure, -AR in formula (2) 9 Structure, and -AR in formula (11) 35 The conversion of a molecule's structure to a hydroxyl group or a mercapto group is sometimes referred to as "deprotection." 【0035】 <(A) At least one resin selected from polyimide represented by formula (1), polybenzoxazole precursor represented by formula (2), and polyimide precursor represented by formula (11) (hereinafter sometimes referred to as (A) resin)> The positive-type photosensitive resin composition of the present invention comprises at least one resin selected from a polyimide represented by formula (1), a polybenzoxazole precursor represented by formula (2), and a polyimide precursor represented by formula (11). 【0036】 [ka] 【0037】 In formula (1), R 1 and R 2 R represents a tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 3 R represents a 3-6 valent organic group with 3-50 carbon atoms. 4 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid-dissociable group having 3 to 50 carbon atoms, and 1 R 4 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a1 represents an integer from 1 to 4. 5 R has 2 to 50 carbon atoms. 3 -(AR 4 ) represents a divalent organic group that does not contain a1. n1 is an integer greater than or equal to 1, n2 is an integer greater than or equal to 0, and n1+n2 is an integer between 1 and 300. All R in equation (1) 4 When R is set to 100 mol%, 4 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 11 (mol%) is 100 ≥ m 11>0 and R 4 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 12 (mol%) is 100 ≥ m 12 >0 【0038】 [ka] 【0039】 In formula (2), R 6 and R 7 R represents a divalent organic group with 4 to 50 carbon atoms, and may be the same or different. 8 R represents a 3-6 valent organic group with 3-50 carbon atoms. 9 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 2 R 9 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a2 represents an integer from 1 to 4. 10 R has 2 to 50 carbon atoms. 8 -(AR 9 ) represents a divalent organic group that does not contain a2. n3 is an integer greater than or equal to 1, n4 is an integer greater than or equal to 0, and n3+n4 is an integer between 1 and 300. All R in equation (2) 9 When R is set to 100 mol%, 9 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 21 (mol%) is 100 ≥ m 21 >0 and R 9 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 22 (mol%) is 100 ≥ m 22 >0 【0040】 [ka] 【0041】 In formula (11), R 32 and R 33R represents a trivalent or tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 34 R represents a 3-6 valent organic group with 3-50 carbon atoms. 35 represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms, and 5 R 35 They may be the same or different. A represents an oxygen atom or a sulfur atom, and a5 represents an integer from 1 to 4. 36 R has 2 to 50 carbon atoms. 34 -(AR 35 ) Represents a divalent organic group that does not contain a5. R 37 and R 38 represents a hydrogen atom and an alkyl group with 1 to 6 carbon atoms, and 6 R 37 , and a7 R 38 They may be the same or different. 6、 And a7 represents an integer of 1 or 2. 17 n is 1 or greater, 18 n is a non-negative integer, and n 17 +n 18 The integer is between 1 and 300. All R in equation (11) 35 When R is set to 100 mol%, 35 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 31 (mol%) is 100 ≥ m 31 >0 and R 35 However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m 32 (mol%) is 100 ≥ m 32 >0 【0042】 In equation (1) above, R 1 and R 2 The group represents a tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. Preferred specific examples include, but are not limited to, residues of the acid dianhydrides listed below. Note that residues of an acid dianhydride are the structure obtained by removing two anhydride groups from the structure of an acid dianhydride. 【0043】 Specific examples of the residue of the acid dianhydride include residues such as diphenyl ether tetracarboxylic dianhydride, diphenyl sulfone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, pyromellitic dianhydride, benzophenone tetracarboxylic dianhydride, diphenyl sulfide tetracarboxylic dianhydride, 4,4'-(hexafluoroisopropylidene) diphthalic anhydride, 4,4'-(isopropylidene) diphthalic anhydride, diphenylmethane tetracarboxylic dianhydride, etc. 【0044】 From the viewpoint of high sensitivity, R 1 and / or R 2 is preferably a tetravalent organic group having a linear or branched aliphatic structure and / or an alicyclic structure and having 4 to 50 carbon atoms. 【0045】 Specific examples of the tetravalent organic group having a linear or branched aliphatic structure and / or an alicyclic structure and having 4 to 50 carbon atoms include structures obtained by hydrogenating residues such as diphenyl ether tetracarboxylic dianhydride, diphenyl sulfone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, pyromellitic dianhydride, benzophenone tetracarboxylic dianhydride, diphenyl sulfide tetracarboxylic dianhydride, 4,4'-(hexafluoroisopropylidene) diphthalic anhydride, 4,4'-(isopropylidene) diphthalic anhydride, diphenylmethane tetracarboxylic dianhydride, etc., cyclohexane tetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, cyclobutane tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5(tetrahydro-2,5-dioxo-3-furanyl) naphtho[1,2-c]furan-1,3-dione, etc., but are not limited thereto. 【0046】 The said R 1 and R 2 In the range of 4 to 50 carbon atoms, the reason why the effects of the present invention can be obtained is as follows. In the polyimide structure, the imide ring and the structure derived from diamine mainly contribute to the photosensitive properties, and the structure derived from acid dianhydride mainly bears the heat resistance and mechanical properties. R1 and R 2 It plays a role in adjusting the rigidity and solubility of the main chain, but the photosensitive properties of the (A) resin are mainly R 3 -(AR 4 )a1, R 8 -(AR 9 )a2, R 34 -(AR 35 ) This is determined by the amount and type of acid-dissociating groups contained in a5. Therefore, R 1 and R 2 Even if the number of carbon atoms changes within the range of 4 to 50, the mechanism of the deprotection reaction by the acid-dissociable group remains unchanged, and the high sensitivity characteristics and the effect of step pattern formation by halftone exposure of the present invention can be obtained. Synthesis may be difficult with fewer than 4 carbon atoms, and solvent solubility may decrease with more than 50 carbon atoms. 【0047】 Furthermore, the R 1 and R 2 The number of carbon atoms is more preferably 6 to 30, even more preferably 8 to 20, and particularly preferably 10 to 15. 【0048】 In equation (1) above, R 3 It is a 3-6 valent organic group with 3-50 carbon atoms. The aforementioned R 3 It has an aromatic ring, and the aromatic ring is -AR 4 It is preferable that it is directly connected to R. 3 By adopting this structure, R 4 When it is a hydrogen atom, it is a hydroxyl group or a mercapto group, or R 4 When the group is acid-dissociable, the acid dissociation constant (pKa) of the hydroxyl group or mercapto group after deprotection increases, improving alkaline solubility. This makes it easier to obtain a relief pattern with less residue. 【0049】 From the viewpoint of increasing sensitivity by promoting alkaline solubility, it is preferable that A is an oxygen atom. 【0050】 Furthermore, in formula (1) above, a1 is an integer from 1 to 4. From the viewpoint of the heat resistance of the resin, a1 is preferably an integer from 1 to 2, and more preferably 2. In formula (1) above, preferred R 3 -(AR 4 The structure of )a1 includes, but is not limited to, the following diamine residues having hydroxyl groups or mercapto groups, and structures in which some or all of the hydroxyl groups or mercapto groups of those residues are protected by acid-dissociable groups. Note that a diamine residue is a structure obtained by removing two amino groups from a diamine. 【0051】 The following diamine residues having a hydroxyl group or a mercapto group include 2,4-diaminophenol, bis(3-amino-4-hydroxy)biphenyl, bis(3-amino-4-hydroxyphenyl)methane, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)fluorene, bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl) Residues such as phenyl)sulfone, 2,4-diaminothiophenol, bis(3-amino-4-mercapto)biphenyl, bis(3-amino-4-mercaptophenyl)methane, bis(3-amino-4-mercaptophenyl)ether, bis(3-amino-4-mercaptophenyl)propane, bis(3-amino-4-mercaptophenyl)fluorene, bis(3-amino-4-mercaptophenyl)hexafluoropropane, and bis(3-amino-4-mercaptophenyl)sulfone are examples. 【0052】 The aforementioned R 3 The reason why the effects of the present invention can be obtained in the range of 3 to 50 carbon atoms and 3 to 6 valency is as follows. The halftone exposure characteristics of the present invention are achieved by the difference in deprotection rates between the acid-dissociable group represented by formula (3) or formula (4) and the acid-dissociable group represented by any of formulas (5) to (7). This difference in deprotection rates is determined by the structure of the acid-dissociable group itself, and R 3 Even if the number of carbon atoms or the valency changes, this basic mechanism remains the same, R 3 The influence of the skeletal structure is small. 3 It has an aromatic ring, and the aromatic ring has -AR4 When directly linked, the acid dissociation constant (pKa) of the hydroxyl group or mercapto group after deprotection becomes moderately high, improving alkaline developability. This effect is due to R 3 It can be obtained in common in the range of 3 to 50 carbon atoms and 3 to 6 valencies. 【0053】 Furthermore, the R 3 The number of carbon atoms is more preferably 6 to 30, and even more preferably 10 to 20. Also, a1 is more preferably 1 to 2, and even more preferably 2. 【0054】 Furthermore, from the viewpoint of increasing sensitivity, R in formula (1) 3 -(AR 4 )a1 is preferably formula (8). 【0055】 [ka] 【0056】 In formula (8), A has the same meaning as the same symbol in formula (1), and the preferred range of A is the same as described above. In equation (8) above, R 39 and R 40 R in equation (1) above 4 , R in equation (2) above 9 , and R in formula (11) 35 It expresses the same meaning as [the other expression]. In equation (8) above, R 21 and R 22 Each of these independently represents a monovalent organic group having 1 to 6 carbon atoms. Examples of monovalent organic groups having 1 to 6 carbon atoms include hydrocarbon groups and alkoxy groups having 1 to 6 carbon atoms. Preferred specific examples include methyl, methoxy, ethyl, ethoxy, propyl, propoxy, isopropyl, isopropoxy, butyl, butoxy, isobutyl, pentyl, hexyl, and cyclohexyl groups. 【0057】 t1 and u1 each independently represent integers between 0 and 4. From the viewpoint of heat resistance, it is preferable that t1 and u1 each independently be integers between 0 and 1, and more preferably that t1 = u1 = 0. X 1 The symbols represent direct bonds, aliphatic groups with 1 to 10 carbon atoms, alicyclic groups with 1 to 10 carbon atoms, ether groups, thioether groups, and 9H-fluorene-9,9-diyl groups. 【0058】 Specific examples of aliphatic groups having 1 to 10 carbon atoms include methylene, ethylene, propylene, isopropylidene, butylene, hexamethylene, heptamethylene, nonamethylene, and decamethylene groups. 【0059】 Specific examples of alicyclic groups having 1 to 10 carbon atoms include cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, and cyclooctyl group. From the perspective of improving the dimensional reproducibility of step patterns, X 1 The group is preferably an aliphatic group having 1 to 10 carbon atoms, or an alicyclic group having 1 to 10 carbon atoms, and more preferably a -C(CH3)2-(isopropylidene group). * represents a bond point. 【0060】 In equation (1) above, R 4 This represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms. 【0061】 Examples of C1-C6 alkyl groups listed here include linear alkyl groups such as methyl, ethyl, n-propyl, n-butyl, n-pentyl, and n-hexyl groups, as well as branched alkyl groups such as isopropyl, isobutyl, and isopentyl groups. 【0062】 Furthermore, all R in equation (1) above 4 When R is set to 100 mol%, 4 However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m 11 (mol%) is 100 ≥ m 11 >0 and R4 is the total proportion m of the acid dissociable group represented by any one of formulas (5) to (7) 12 (mol%) such that 100 ≥ m 12 > 0. 【0063】 [Chemical formula] 【0064】 [Chemical formula] 【0065】 In the above formula (3), R 11 and R 12 each independently represents an alkyl group having 1 to 6 carbon atoms. Preferred specific examples of the alkyl group having 1 to 6 carbon atoms include, but are not limited to, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, isopentyl group, isohexyl group, t-butyl group, t-amyl group, etc. From the viewpoint of reducing shrinkage during curing, the alkyl group having 1 to 6 carbon atoms is more preferably a methyl group or an ethyl group. 【0066】 In the above formula (4), R 13 represents an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 8 carbon atoms. Specific examples of the alkyl group having 1 to 6 carbon atoms include, but are not limited to, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, isopentyl group, isohexyl group, t-butyl group, t-amyl group, etc. Specific examples of the alkoxy group having 1 to 6 carbon atoms include, but are not limited to, methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, hexyloxy group, etc. Specific examples of the alkoxyalkyl group having 2 to 8 carbon atoms include, but are not limited to, methoxymethyl group, methoxyethyl group, ethoxyethyl group, ethoxymethyl group, butoxybutyl group, etc. 【0067】 From the perspective of minimizing contraction during curing, R 13 The alkyl group is preferably a C1-C6 alkyl group, and more preferably a methyl group, ethyl group, propyl group, or isopropyl group. p represents an integer between 0 and 2. Here, p=0 means a five-membered ring, p=1 means a six-membered ring, and p=2 means a seven-membered ring. From the viewpoint of the stability of the protecting group, it is preferable for p to be 1. q represents an integer between 0 and 2. From the viewpoint of minimizing contraction during curing, it is preferable for q to be 0. * represents a connection point. 【0068】 Equations (3) and (4) above are equivalent to -AR in equation (1). 4 The α-position is branched. At least one of the acid-dissociable groups is a group represented by formulas (3) and (4), thus -AR 4 The activation energy required to convert the group to a hydroxyl group or a mercapto group, i.e., to deprotect it, can be reduced. Therefore, even if only a small amount of acid is generated in the photosensitive composition upon light irradiation, deprotection can be achieved, resulting in a highly sensitive photosensitive resin composition. 【0069】 On the other hand, the acid-dissociable groups represented by formulas (5) to (7) require a larger amount of acid for deprotection compared to the acid-dissociable groups represented by formulas (3) and (4), i.e., they have a slower deprotection rate. In the present invention, by using in combination an acid-dissociable group represented by formula (3) or (4), which has a fast deprotection rate, and an acid-dissociable group represented by any of formulas (5) to (7), which has a slow deprotection rate, it is possible to provide a gradation in the change in dissolution rate with respect to exposure. Specifically, in exposure using a halftone photomask, a sufficient amount of acid is generated in the light-transmitting area, so both the acid-dissociable group represented by formula (3) or (4) and the acid-dissociable group represented by any of formulas (5) to (7) are deprotected and exhibit high solubility in the developer. On the other hand, in the semi-transparent areas, the amount of acid generated is small, so acid-dissociable groups represented by formula (3) or (4), which have a fast deprotection rate, are deprotected, while acid-dissociable groups represented by any of formulas (5) to (7), which have a slow deprotection rate, are not easily deprotected. As a result, solubility is only partially improved in the semi-transparent areas, and the film does not completely dissolve during development, remaining in the semi-transparent areas. In this way, a step pattern can be formed with a single exposure and development. 【0070】 In equation (5) above, R 14 R represents an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 8 carbon atoms. Preferred R 14 A concrete example is R 13 It is the same as this. 【0071】 r represents an integer between 0 and 2. Here, r=0 means a five-membered ring, r=1 means a six-membered ring, and r=2 means a seven-membered ring. The preferred range of r is the same as that of p. 【0072】 s represents an integer between 0 and 2. The preferred range of s is the same as that of q. In equations (6) and (7) above, R 15 ~R 20 This represents an alkyl group with 1 to 6 carbon atoms. 【0073】 Preferred examples of C1-C6 alkyl groups include, but are not limited to, methyl, ethyl, propyl, butyl, pentyl, hexyl, isopropyl, isobutyl, isopentyl, isohexyl, t-butyl, and t-amyl groups. From the viewpoint of minimizing shrinkage during curing, methyl and ethyl groups are more preferred among C1-C6 alkyl groups. * indicates a bond point. 【0074】 The following structures are examples of preferred structures for formula (3), but are not limited to these. 【0075】 [ka] 【0076】 * represents a connection point. The following structures are examples of preferred structures for formula (4), but are not limited to these. 【0077】 [ka] 【0078】 * represents a connection point. The following structures are examples of preferred structures for formula (5), but are not limited to these. 【0079】 [ka] 【0080】 * represents a connection point. The following structures are examples of preferred structures for the above formula (6), but are not limited to these. 【0081】 [ka] 【0082】 * represents a connection point. The following structures are examples of preferred structures for formula (7), but are not limited to these. 【0083】 [ka] 【0084】 * represents a connection point. For example, a specific example of the case where formula (1) has acid-dissociable groups represented by formulas (3) and (6) is the structure represented by formula (9). 【0085】 [ka] 【0086】 In equation (9) above, R 1 , R 2 , R 3 , R 5 n5~n represents the same symbol and meaning as in formula (1) above. 10 n is a non-negative integer, and n5+n6+n7+n8+n9+n 10 =n1. When n5 is an integer greater than or equal to 1, then n6~n 10 n5 is a non-negative integer, and when n5=0, n6+n7 is a non-negative integer and n8+n9 is a non-negative integer. From the viewpoint of increasing sensitivity, in the above formula (1), m 11 +m 12 (Mole %) is 10 ≤ m 11 +m 12 Preferably, it is ≤95, and more preferably 20 ≤ m 11 +m 12 The value is ≤90. 【0087】 Furthermore, from the viewpoint of achieving both high sensitivity characteristics and the formation of a good step pattern by halftone exposure, the aforementioned m 11 +m 12 When this is set to 100 mol%, the above m 11 (mol%) and the m 12 (mol%) is 1 <m 11 / m 12It is preferable that the value be ≤ 9. From the perspective of increasing sensitivity, 1.5 <m 11 / m 12 It is more preferable that 2 <m 11 / m 12 It is even more preferable that this be the case. Furthermore, from the viewpoint of forming a good step pattern by halftone exposure, m 11 / m 12 It is more preferable that ≤ 7, m 11 / m 12 It is even more preferable that the value be ≤ 5. 【0088】 Here, m 11 , m 12 , m 11 +m 12 , and, m 11 / m 12 The value of this parameter can be determined from methods such as nuclear magnetic resonance analysis (NMR). 【0089】 In the case of NMR measurement, the integral value of protons attributed to the organic group specific to the structure of formulas (3) to (7) in the protected resin, the integral value of protons attributed to the phenolic hydroxyl group in the unprotected resin, and the integral value of protons of the aromatic ring in the resin before and after protection can be measured. 【0090】 For example, let M1 and N1 be the integral values ​​of the protons of the phenolic hydroxyl group (peak around 8.5 ppm) and the aromatic ring (peak around 7.5 ppm) in the unprotected resin, respectively, and let N2 be the integral value of the protons of the aromatic ring (peak around 7.5 ppm) in the protected resin. If the resin is protected with the structures of formulas (3) and (4), and let M3 and M4 be the integral values ​​of the protons of the methyl group adjacent to the tertiary carbon between the bond point of formulas (3) and (4) and the ether group (peak around 1.3 ppm), then the protection rates L3 (mol%) and L4 (mol%) according to formulas (3) and (4) are calculated as follows. L3 = ((M3 / 3) / N2) / (M1 / N1) × 100 L4 = ((M4 / 3) / N2) / (M1 / N1) × 100 When the resin is protected by the structure of formula (5), and M5 is the integral value of the protons adjacent to the tertiary carbon between the bond point of formula (5) and the ether group or the methylene group (peak around 1.7 ppm), the protection rate L5 (mol%) by formula (5) can be calculated as follows. L5 = ((M5 / 2) / N2) / (M1 / N1) × 100 When the resin is protected by the structure of formula (6), if the integral values ​​of the protons of the methyl group adjacent to the quaternary carbon in formula (6) by j1 and the methylene group adjacent by k1 (where j1 and k1 are integers from 0 to 3, and j1 + k1 = 3) (methyl group: peak around 1.5 ppm, methylene group: peak around 1.9 ppm) are M6 and M7, respectively, the protection rate L6 (mol%) by formula (6) can be calculated as follows. L6=(((M6+M7) / (j1×3+k1×2)) / N2) / (M1 / N1)×100 When the resin is protected by the structure of formula (7), if the integral values ​​of the protons of the methyl group adjacent to the quaternary carbon in formula (7) with j2 positions and the methylene group adjacent with k2 positions (where j2 and k2 are integers from 0 to 3, and j2 + k2 = 3) (methyl group: peak around 1.5 ppm, methylene group: peak around 1.9 ppm), respectively, are M8 and M9, then the protection rate L7 (mol%) according to formula (7) can be calculated as follows. L7=(((M8+M9) / (j2×3+k2×2)) / N2) / (M1 / N1)×100 Therefore, m 11 , m 12 , m 11 +m 12 , and, m 11 / m 12 It is calculated as follows: m 11 =L3+L4 m 12 =L5+L6+L7 m 11 +m 12 =L3+L4+L5+L6+L7 m 11 / m 12=(L3+L4) / (L5+L6+L7) In equation (1) above, R 5 R has 2 to 50 carbon atoms. 3 -(AR 4 ) represents a divalent organic group that does not contain a1. Preferred specific examples include, but are not limited to, the residues of the diamines listed below. R 3 -(AR 4 Examples of divalent organic groups that do not contain )a1 include residues such as paraphenylenediamine, metaphenylenediamine, toluylenediamine, benzidine, orthotolidine, diaminodiphenyl ether, diaminodiphenyl sulfone, diaminodiphenylmethane, diaminodiphenyl ketone, diaminodiphenyl sulfide, bis(aminophenyl)propane, bis(aminophenyl)hexafluoropropane, bis(trifluoromethyl)benzidine, and their aqueous additives, butanediamine, pentamethylenediamine, hexamethylenediamine, and 1,3-bis(3-aminopropyl)tetramethyldisiloxane. 【0091】 In equation (1) above, n1 is an integer greater than or equal to 1, n2 is an integer greater than or equal to 0, and n1 + n2 is an integer between 1 and 300. Here, equation (1) is R 3 -(AR 4 ) Structural units including a1 and R 3 -(AR 4 )It may be a random copolymer consisting of structural units that do not contain a1, or it may be an alternating copolymer or a block copolymer.In this case, R 3 -(AR 4 Let n1 be the sum of structural units including a1, R 3 -(AR 4 Let n2 be the sum of structural units that do not include a1. From the viewpoint of improving the dimensional reproducibility of the step pattern, n1 is preferably an integer of 10 or more, and more preferably an integer of 20 or more. 【0092】 From the viewpoint of achieving both improved mechanical properties and high sensitivity of the cured film, n1+n2 is preferably an integer between 10 and 300, and more preferably an integer between 20 and 150. From the viewpoint of improving the dimensional reproducibility of the step pattern, it is preferable that n1 / (n1+n2)≧0.8, more preferably that n1 / (n1+n2)≧0.9, and even more preferably that n1 / (n1+n2)≧0.95. 【0093】 In equation (2) above, R 6 and R 7 represents a divalent organic group having 4 to 50 carbon atoms, and may be the same or different. Preferred structures include, but are not limited to, the dicarboxylic acid residues listed below. 【0094】 Examples of divalent organic groups with 4 to 50 carbon atoms include residues such as dicarboxydiphenyl ether, dicarboxydiphenyl sulfone, dicarboxydiphenyl sulfide, dicarboxydiphenylmethane, dicarboxybiphenyl, terephthalic acid, isophthalic acid, dicarboxydiphenyl ketone, 2,2-bis(carboxyphenyl)propane, 2,2-bis(carboxyphenyl)hexafluoropropane, and 9,9-bis(carboxyphenyl)fluorene. 【0095】 From the perspective of increasing sensitivity, R 6 and / or R 7 However, it is preferable that the organic group is a divalent organic group having 4 to 50 carbon atoms and having a linear or branched aliphatic structure and / or alicyclic structure. 【0096】 Preferred structures of divalent organic groups having 4 to 50 carbon atoms include, but are not limited to, structures obtained by hydrogenating residues such as dicarboxydiphenyl ether, dicarboxydiphenyl sulfone, dicarboxydiphenyl sulfide, dicarboxydiphenylmethane, dicarboxybiphenyl, terephthalic acid, isophthalic acid, dicarboxydiphenyl ketone, 2,2-bis(carboxyphenyl)propane, 2,2-bis(carboxyphenyl)hexafluoropropane, and 9,9-bis(carboxyphenyl)fluorene, as well as residues such as adipic acid, hexanedicarboxylic acid, dodecanedicarboxylic acid, and adamantanedicarboxylic acid. 【0097】 Furthermore, the R 6 and R 7 The reason why the effects of the present invention can be obtained in the preferred range of and the range of carbon number 4 to 50 is that R in formula (1) 1 and R 2 It is the same as above. 6 and R 7 The number of carbon atoms is more preferably 6 to 30, and even more preferably 8 to 20. 【0098】 In equation (2) above, R 8 It is a 3-6 valent organic group with 3-50 carbon atoms. The aforementioned R 8 It has an aromatic ring, and the aromatic ring is -AR 9 It is preferable that it is directly connected to R. 8 By adopting this structure, R 9 When it is a hydrogen atom, it is a hydroxyl group or a mercapto group, or R 9 When the group is acid-dissociable, the acid dissociation constant (pKa) of the hydroxyl group or mercapto group after deprotection increases, improving alkaline solubility. This makes it easier to obtain a relief pattern with less residue. From the viewpoint of increasing sensitivity by promoting alkaline solubility, it is preferable that A is an oxygen atom. 【0099】 Furthermore, in equation (2) above, a2 is an integer between 1 and 4. The preferred range for a2 is the same as that for a1. In the above formula (2), preferred R8 -(AR 9 )a2 is a preferred R in formula (1) above. 3 -(AR 4 ) This is the same as the range of a1. From the perspective of increasing sensitivity, R in equation (2) 8 -(AR 9 )a2 is preferably formula (8) above. 【0100】 In equation (2) above, R 9 R represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms. 9 A preferred range is R 4 The same things can be listed. For example, a specific example of the case where formula (2) has acid-dissociable groups represented by formulas (3) and (5) is the structure represented by formula (10). 【0101】 [ka] 【0102】 In the above equation (10), R 6 , R 7 , R 8 , R 10 n4 and n4 represent the same symbols and have the same meaning as in formula (2) above. 11 ~n 16 n is a non-negative integer, and n 11 +n 12 +n 13 +n 14 +n 15 +n 16 =n3 11 When n is an integer greater than or equal to 1, 12 ~n 16 n is a non-negative integer, and 11 When = 0, n 12 +n 13 is an integer greater than or equal to 1 and n 14 +n 15 This will be an integer greater than or equal to 1. 【0103】 From the viewpoint of increasing sensitivity, in formula (2) above, m 21 +m 22 (Mole %) is 10 ≤ m 21 +m 22 Preferably, it is ≤95, and more preferably 20 ≤ m 21 +m 22 The value is ≤90. 【0104】 Furthermore, from the viewpoint of achieving both high sensitivity characteristics and the formation of a good step pattern by halftone exposure, the aforementioned m 21 +m 22 When this is set to 100 mol%, the above m 21 (mol%) and the m 22 (mol%) is 1 <m 21 / m 22 It is preferable that the value be ≤ 9. From the perspective of increasing sensitivity, 1.5 <m 21 / m 22 It is more preferable that 2 <m 21 / m 22 It is even more preferable that this be the case. Furthermore, from the viewpoint of forming a good step pattern by halftone exposure, m 21 / m 22 It is more preferable that ≤ 7, m 21 / m 22 It is even more preferable that the value be ≤ 5. 【0105】 Here, m 21 , m 22 , m 21 +m 22 , and, m 21 / m 22 Regarding the value of m 11 , m 12 , m 11 +m 12 , and, m 11 / m 12 Similar to the value of , it can be determined from methods such as nuclear magnetic resonance analysis (NMR). 【0106】 In equation (2) above, R 10 R has 2 to 50 carbon atoms. 8 -(AR 9) represents a divalent organic group that does not contain a2. A preferred specific example is R in formula (1) above. 5 The same things can be listed. 【0107】 In equation (2) above, n3 is an integer greater than or equal to 1, n4 is an integer greater than or equal to 0, and n3 + n4 is an integer between 1 and 300. 【0108】 Here, equation (2) is R 8 -(AR 9 ) Structural units including a2 and R 8 -(AR 9 )It may be a random copolymer consisting of structural units that do not contain a2, or it may be an alternating copolymer or a block copolymer.In this case, R 8 -(AR 9 Let n3 be the sum of structural units including a2, R 8 -(AR 9 Let n4 be the total number of structural units that do not include a2. In equation (2), the preferred ranges for n3, n3+n4, and n3 / (n3+n4) are the same as the ranges for n1, n1+n2, and n1 / (n1+n2) in equation (1), respectively. 【0109】 In equation (11) above, R 32 and R 33 R represents a trivalent or tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. 32 and R 33 When is a tetravalent organic group having 4 to 50 carbon atoms, a preferred structure is one in formula (1) above, where R 1 and R 2 The same things can be listed. 【0110】 R 32 and R 33 When the group is a trivalent organic group with 4 to 50 carbon atoms, preferred structures include, but are not limited to, the following tricarboxylic acid residues. A tricarboxylic acid residue is a structure obtained by removing three carboxyl groups from the structure of a tricarboxylic acid. 【0111】 Specific examples of tricarboxylic acid residues include, but are not limited to, residues of trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, biphenyl tricarboxylic acid, or residues of compounds in which some of the hydrogen atoms of these aromatic rings are substituted with alkyl or halogen atoms, or residues of hydrogenated tricarboxylic acids. 【0112】 From the perspective of increasing sensitivity, R 32 and / or R 33 However, it is preferable that the group is a tetravalent organic group having 4 to 50 carbon atoms and having a linear or branched aliphatic structure and / or alicyclic structure. 【0113】 Specific examples of tetravalent organic groups having a linear or branched aliphatic and / or alicyclic structure, with 4 to 50 carbon atoms, include, in formula (1) above, R 1 and R 2 The same things can be listed. 【0114】 Furthermore, the R 32 and R 33 The reason why the effects of the present invention can be obtained in the preferred range of and the range of carbon number 4 to 50 is that R in formula (1) 1 and R 2 It is the same as above. 32 and R 33 The number of carbon atoms is more preferably 6 to 30, and even more preferably 8 to 20. 【0115】 In equation (11) above, R 34 It is a 3-6 valent organic group with 3-50 carbon atoms. The aforementioned R 34 It has an aromatic ring, and the aromatic ring is -AR 35 It is preferable that it is directly connected to R. 34 By adopting this structure, R 35 When it is a hydrogen atom, it is a hydroxyl group or a mercapto group, or R 35When the group is acid-dissociable, the acid dissociation constant (pKa) of the hydroxyl group or mercapto group after deprotection increases, improving alkaline solubility. This makes it easier to obtain a relief pattern with less residue. From the viewpoint of increasing sensitivity by promoting alkaline solubility, it is preferable that A is an oxygen atom. 【0116】 Furthermore, in equation (11), a5 is an integer between 1 and 4. The preferred range for a5 is the same as that for a1. 【0117】 In the above formula (11), preferred R 34 -(AR 35 )a5 is a preferred R in formula (1) above. 3 -(AR 4 ) This is the same as the range of a1. 【0118】 From the perspective of increasing sensitivity, R in formula (11) 34 -(AR 35 )a5 is preferably formula (8) above. 【0119】 In equation (11) above, R 35 R represents a hydrogen atom, an alkyl group with 1 to 6 carbon atoms, or a monovalent acid-dissociable group with 3 to 50 carbon atoms. 35 A preferred range for R in formula (1) is 4 The same things can be listed. 【0120】 In equation (11) above, R 37 and R 38 The group represents a hydrogen atom and an alkyl group having 1 to 6 carbon atoms. Preferred alkyl groups having 1 to 6 carbon atoms include linear alkyl groups such as methyl, ethyl, n-propyl, n-butyl, n-pentyl, and n-hexyl groups, and branched alkyl groups such as isopropyl, isobutyl, and isopentyl groups. 【0121】 Furthermore, in formula (11), a6 and a7 are integers of 1 or 2. The values ​​of a6 and a7 are preferably 2. 【0122】 For example, a specific example of the case where formula (11) has acid-dissociable groups represented by formulas (3) and (5) is the structure represented by formula (12). 【0123】 [ka] 【0124】 In the above equation (12), R 32 , R 33 , R 34 , R 36 , and n 18 n represents the same symbol and has the same meaning as in formula (11) above. 19 ~n 24 n is a non-negative integer, and n 19 +n 20 +n 21 +n 22 +n 23 +n 24 =n 17 n 19 When n is an integer greater than or equal to 1, 20 ~n 24 n is a non-negative integer, and 19 When = 0, n 20 +n 21 is an integer greater than or equal to 1 and n 22 +n 23 This will be an integer greater than or equal to 1. 【0125】 From the viewpoint of increasing sensitivity, in the above formula (11), m 31 +m 32 (Mole %) is 10 ≤ m 31 +m 32 Preferably, it is ≤95, and more preferably 20 ≤ m 31 +m 32 The value is ≤90. 【0126】 Furthermore, from the viewpoint of achieving both high sensitivity characteristics and the formation of a good step pattern by halftone exposure, the aforementioned m 31 +m 32 When this is set to 100 mol%, the above m 31 (mol%) and the m 32 (mol%) is 1 <m 31 / m 32 It is preferable that the value be ≤ 9. From the perspective of increasing sensitivity, 1.5 <m 31 / m 32 It is more preferable that 2 <m 31 / m 32 It is even more preferable that this be the case. 【0127】 Furthermore, from the viewpoint of forming a good step pattern by halftone exposure, m 31 / m 32 It is more preferable that ≤ 7, m 31 / m 32 It is even more preferable that the value be ≤ 5. 【0128】 Here, m 31 , m 32 , m 31 +m 32 , and, m 31 / m 32 Regarding the value of m 11 , m 12 , m 11 +m 12 , and, m 11 / m 12 Similar to the value of , it can be determined from methods such as nuclear magnetic resonance analysis (NMR). 【0129】 In equation (11) above, R 36 R has 2 to 50 carbon atoms. 34 -(AR 35 ) represents a divalent organic group that does not contain a5. A preferred specific example is R in formula (1) above. 5 The same things can be listed. 【0130】 In the above formula (11), n 17 n is 1 or greater, 18 n is a non-negative integer, and n 17 +n 18 The integer is between 1 and 300. 【0131】 Here, equation (11) is R 34 -(AR 35 ) Structural units including a5 and R 34 -(AR 35)It may be a random copolymer consisting of structural units that do not contain a5, or it may be an alternating copolymer or a block copolymer.In this case, R 34 -(AR 35 ) The sum of structural units including a5 is n 17 Toshi, R 34 -(AR 35 ) The sum of structural units that do not include a5 is n 18 Let's assume that. 【0132】 In the above formula (11), n 17 , n 17 +n 18 , and, n 17 / (n 17 +n 18 The preferred ranges for ) are the same as the ranges for n1, n1+n2, and n1 / (n1+n2) in formula (1) above. 【0133】 Furthermore, the ends of formulas (1), (2), and (11) may be encapsulated with known end-capturing agents such as monoamines, acid anhydrides, monocarboxylic acids, monoacid chloride compounds, and monoactive ester compounds. In other words, formulas (1), (2), and (11) may further have terminal structures. 【0134】 The sealing of formulas (1), (2), and (11) with an end-capturing agent improves the storage stability of the photosensitive resin composition. The proportion of monoamine introduced as an end-capturing agent is preferably 20 mol% or more, more preferably 40 mol% or more, even more preferably 60 mol% or more, and particularly preferably 80 mol% or more, when the amount of terminal carboxyl groups contained in resin (A) is taken as 100 mol%. 【0135】 Furthermore, the proportion of acid anhydrides, monocarboxylic acids, monoacid chloride compounds, or monoactive ester compounds used as end-capping agents is preferably 20 mol% or more, more preferably 40 mol% or more, even more preferably 60 mol% or more, and particularly preferably 80 mol% or more, when the amount of terminal amino groups contained in resin (A) is taken as 100 mol%. By reacting multiple end-capping agents, both ends of formula (1), formula (2), and formula (11) may have different end groups, and resin (A) may contain multiple polyimides represented by formula (1) and polybenzoxazoles represented by formula (2) each having different end groups. 【0136】 From the viewpoint of improving the dimensional reproducibility of the stepped pattern, it is preferable that formulas (1), (2), and (11) have terminal structures, and that these terminal structures include a thermally crosslinkable group. The thermal crosslinking of the (A) resin itself suppresses the fluidity of the pattern, especially from the second step onward, which contributes to improving the dimensional reproducibility of the stepped pattern. 【0137】 Preferred thermally crosslinkable groups include epoxy groups, glycidyl groups, oxetanyl groups, vinyl groups, ethynyl groups, acrylic groups, methacrylic groups, maleic acid residues, and nadic acid residues. More preferably, vinyl groups, ethynyl groups, acrylic groups, methacrylic groups, maleic acid residues, nadic acid residues, and even more preferably, acrylic groups and methacrylic groups. 【0138】 Furthermore, when combined with the (C) thermal crosslinking agent described later, the terminal structure may react with the (C) thermal crosslinking agent. The reaction of the (A) terminal structure with the (C) thermal crosslinking agent to form a crosslinked structure suppresses the fluidity of the pattern, especially from the second stage onward, contributing to improved dimensional reproducibility of the stepped pattern. 【0139】 Preferred terminal structures that react with thermal crosslinking agents include hydroxyl groups and mercapto groups that react with thermal crosslinking agents having epoxy groups or thermal crosslinking agents having alkoxymethyl groups. 【0140】 The weight-average molecular weight of the resin (A) is preferably 3,000 to 200,000 in polystyrene terms, more preferably 5,000 to 100,000, and even more preferably 7,000 to 60,000, as measured by gel permeation chromatography. By setting the weight-average molecular weight of the resin (A) within the above range, it is easier to satisfy good solvent solubility, good solubility in developing solutions, and high mechanical strength. 【0141】 R in equation (1) above 4 , R in equation (2) above 9 , and R in formula (11) 35 If it is a monovalent acid-dissociable group with 3 to 50 carbon atoms, then -AR 4 ,-AR 9 , and, -AR 35 These can be obtained by reacting a resin having hydroxyl groups or mercapto groups with a protective agent. For example, they can be obtained by reacting a resin having hydroxyl groups or mercapto groups with a protective agent in the presence of an acid or base at a reaction temperature of -20 to 50°C, either without a solvent or in a solvent such as toluene, hexane, propylene glycol monomethyl ether acetate, or cyclopentanone. 【0142】 In this invention, the protective agent is a compound that can protect hydroxyl groups and mercapto groups, and the protected groups introduced therein can be deprotected by the action of acids or bases. Known protective agents capable of protecting hydroxyl groups and mercapto groups can be used as the protective agent. 【0143】 As a protective agent, for example, R 2 If the group is 1-ethoxyethyl, ethyl vinyl ether can be used; if it is 2-tetrahydropyranyl, 3,4-dihydro-2H-pyran can be used. 【0144】 Examples of acids include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, and perchloric acid, and organic acids such as methanesulfonic acid, trifluoromethanesulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acid. Organic acid salts such as pyridinium p-toluenesulfonate can also be preferably used. 【0145】 Examples of bases include amine compounds such as pyridine, N,N-diethyl-4-aminopyridine, triethylamine, and diisopropylamine. 【0146】 The content of resin (A) in the photosensitive resin composition of the present invention is preferably 10 to 90% by mass, more preferably 20 to 80% by mass, and even more preferably 30 to 70% by mass, when the total solid content of the photosensitive resin composition is taken as 100% by mass. By setting the content of resin (A) within the above range, good film-forming properties, sensitivity, and mechanical properties of the cured product can be achieved simultaneously. 【0147】 <(B) Photoacid Generator> The photoacid generator (B) used in the present invention is a compound that has the function of generating acid upon exposure. 【0148】 Specific examples of the photoacid generators (B) mentioned above include ester compounds of polyvalent phenol compounds and naphthoquinone diazidosulfonic acid compounds, onium salt-type ionic photoacid generators, and nonionic photoacid generators. An onium salt refers to a compound formed when a compound having an electron pair that does not participate in chemical bonding coordinates with another cationic compound via that electron pair. In the ionic photoacid generator, the cationic moiety of the onium salt determines the photochemical properties (molar extinction coefficient, absorption wavelength, quantum yield), while the anionic moiety determines the strength of the acid produced. On the other hand, nonionic photoacid generators are photoacid generators in which a light-absorbing moiety and an acid are bonded via an ester bond. 【0149】 As an ionic photoacid generator, one that does not contain heavy metals or halogen ions is preferred, and triorganosulfonium salt compounds are more preferred. Specific examples of triorganosulfonium salt compounds include, for example, methanesulfonate, trifluoromethanesulfonate, camphorsulfonate, 4-toluenesulfonate, and perfluoro-1-butanesulfonate of triphenylsulfonium ("SP-056", trade name, manufactured by ADEKA Corporation); the aforementioned sulfonate of dimethyl-1-naphthylsulfonium; the aforementioned sulfonate of dimethyl(4-hydroxy-1-naphthyl)sulfonium; the aforementioned sulfonate of dimethyl(4,7-dihydroxy-1-naphthyl)sulfonium; and the aforementioned sulfonate of diphenyliodonium. 【0150】 Nonionic photoacid generators that can be used include diazomethane compounds, sulfone compounds, sulfonic acid ester compounds, carboxylic acid ester compounds, sulfonimide compounds, phosphate ester compounds, and sulfonebenzotriazole compounds. A specific example of a diazomethane compound is bis(4-methylphenylsulfonyl)diazomethane ("WPAG-199", trade name, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.). 【0151】 Specific examples of sulfone compounds include β-ketosulfone compounds and β-sulfonylsulfone compounds. Preferred sulfone compounds include 2-(p-toluenesulfonyl)acetophenone and bis(phenylsulfonyl)methane. 【0152】 Specific examples of sulfonic acid ester compounds include alkyl sulfonic acid esters, haloalkyl sulfonic acid esters, aryl sulfonic acid esters, and iminosulfonic acid ester compounds. Preferred specific examples include benzoin-4-tolylsulfonate, pyrogalloltris(methylsulfonate), nitrobenzyl-9,10-diethoxyanthuryl-2-sulfonate, and 2,6-(dinitrobenzyl)phenylsulfonate. 【0153】 A specific example of a carboxylic acid ester compound is, for instance, 2-nitrobenzyl carboxylic acid. 【0154】 From the viewpoint of forming a good step pattern by halftone exposure, it is preferable that the (B) photoacid generator contains an oxime sulfonate compound and / or an imido sulfonate compound. Oxime sulfonate compounds and imido sulfonate compounds are nonionic photoacid generators, and since the acidic group generated by light is sulfonic acid, they have a high acid dissociation constant (pKa), and in particular, when coexisting with the (A) resin, they contribute more significantly to the formation of a good step pattern by halftone exposure. 【0155】 The oxime sulfonate compound can be represented by the following structure. 【0156】 [ka] 【0157】 R 23 A is a monovalent organic group having 1 to 12 carbon atoms. Specific examples of monovalent organic groups having 1 to 12 carbon atoms include the methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, trifluoromethanesulfonic acid group, nonafluorobutyl group, perfluorooctyl group, (7,7-dimethyl-2-oxobicyclo[2.2.1]heptan-1-yl)methyl group, benzyl group, phenyl group, tosyl group, and naphthyl group. 【0158】 R 24 and R 25 R is a monovalent organic group with 1 to 30 carbon atoms. 24 and R 25These may be the same or different. Specific examples of monovalent organic groups having 1 to 30 carbon atoms include the cyano group, trifluoromethyl group, hexafluoropropyl group, pentafluorobutyl group, dodecafluorohexyl group, phenyl group, 4-methoxyphenyl group, 2-fluorenyl group, and 4-(3-(4-(2,2,2-trifluoro-1-(((propylsulfonyl)oxy)imino)ethyl)phenoxy)propoxy)phenyl group. 【0159】 R 26 This is a monovalent organic group having 3 to 30 carbon atoms. Specific examples of monovalent organic groups having 3 to 30 carbon atoms include the following structures. 【0160】 [ka] 【0161】 * represents a connection point. 【0162】 Specific examples of the aforementioned oxime sulfonates include “Irgacure” (registered trademark) PAG-103 (benzeneacetonitrile, 2-methyl-α-[[(propylsulfonyl)oxy]imino]-3(2H)-thienylidene), PAG-121 (benzeneacetonitrile, 2-methyl-α-[[(4-methylphenyl)oxy]imino]-3(2H)-thienylidene), PAG-108 (benzeneacetonitrile, 2-methyl-α-[[(n-octyl)oxy]imino]-3(2H)-thienylidene), PAG-203 (all manufactured by BASF Japan), PAI-101 ((Z)-4-methoxy-N-(tosiloxy)benzimidoylcyanide, manufactured by Midori Chemical Co., Ltd.). 【0163】 The aforementioned imidosulfonate compound can be represented by the following structure. 【0164】 [ka] 【0165】 R 27 R is a monovalent organic group having 1 to 12 carbon atoms. Specific examples of monovalent organic groups having 1 to 12 carbon atoms include R 23 Examples of this include the base mentioned above. 【0166】 R 28 and R 29 R is a monovalent organic group with 1 to 30 carbon atoms. 28 and R 29 These may be the same or different. Specific examples of monovalent organic groups with 1 to 30 carbon atoms include R 24 and R 25 Examples of this include the base mentioned above. 【0167】 R 30 This is a monovalent organic group with 3 to 30 carbon atoms. Specific examples of divalent organic groups with 3 to 30 carbon atoms include the following structures. 【0168】 [ka] 【0169】 R 31 is a monovalent organic group having 1 to 12 carbon atoms. v is an integer from 0 to 2. Specific examples of monovalent organic groups having 1 to 12 carbon atoms include methyl group, ethyl group, isopropyl group, butyl group, 2-butyl group, isobutyl group, t-butyl group, hexyl group, 2-ethylhexyl group, dodecanyl group, 1-(hexy-1-en-1-yl) group, and 1-(4-butoxyphenethyl) group. * represents a bond point. 【0170】 Examples of imidosulfonate compounds include N-hydroxynaphthalimide triflate, “ADEKA ARCULUS” (registered trademark) SP-606 (4-butyl-N-hydroxynaphthalimide triflate, manufactured by ADEKA Corporation), NA-101 (N-hydroxynaphthalimide-p-toluenesulfonate), and NA-106 (N-hydroxynaphthalimide camphor sulfonate, all manufactured by Midori Chemical Co., Ltd.). 【0171】 In the photosensitive resin composition of the present invention, the content of (B) photoacid generator is preferably 1 to 100 parts by mass, more preferably 1 to 40 parts by mass, and even more preferably 3 to 20 parts by mass, per 100 parts by mass of (A) resin, from the viewpoint of the difference in dissolution rate between the exposed and unexposed areas and the allowable range of sensitivity. 【0172】 <(C) Thermal crosslinking agent> From the viewpoint of improving the dimensional reproducibility of the step pattern, the photosensitive resin composition of the present invention preferably further contains (C) a thermal crosslinking agent. The (C) thermal crosslinking agent contains two or more thermal crosslinking groups in its molecule, and excludes polymers and oligomers in which one or more structural units are linked together in groups of three or more. From the viewpoint of further improving the dimensional reproducibility of the step pattern, it is preferable that the molecule contains five or more thermal crosslinking groups. 【0173】 Specific examples of thermal crosslinking groups include, but are not limited to, methylol groups, alkoxymethyl groups, vinyl groups, ethynyl groups, epoxy groups, glycidyl groups, and oxetanyl groups. Preferably, it is a methylol group, an alkoxymethyl group, and more preferably an alkoxymethyl group. 【0174】 Examples of alkoxymethyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, and butoxymethyl groups. However, the group is not limited to these. 【0175】 Preferred specific examples of the (C) thermal crosslinking agent include HMOM-TPPHBA, HMOM-TPHAP (trade names, manufactured by Honshu Chemical Industry Co., Ltd.), NIKALAC® MX-290, NIKALAC MX-280, NIKALAC MX-270, NIKALAC MX-279, NIKALAC MW-100LM, and NIKALAC MX-750LM (product name, manufactured by Sanwa Chemical Co., Ltd.), VG3101L (product name, manufactured by Printec Co., Ltd.), "Tepic" (registered trademark) S, "Tepic" G, "Tepic" P (product names, manufactured by Nissan Chemical Industries, Ltd.), "Epiclon" N660, "Epiclon" N695, HP7200 (product names, manufactured by Dainippon Ink and Chemicals, Inc.), "Denacol" EX-321L (product name, manufactured by Nagase ChemteX Co., Ltd.), NC6000, EPPN502H, NC3000 (product names, manufactured by Japan Examples of compounds containing an oxetanyl group include OXT-121, OXT-221, OX-SQ-H, OXT-191, PNOX-1009, RSOX (all trade names, manufactured by Toagosei Co., Ltd.), OXBP, and OXTP (both trade names, manufactured by Ube Industries, Ltd.), all of which are available from the respective companies mentioned above. 【0176】 In the photosensitive resin composition of the present invention, the content of (C) the thermal crosslinking agent is preferably 5 parts by mass or more and 50 parts by mass or less, when the amount of (A) the resin is 100 parts by mass. 【0177】 By setting the content of the (C) thermal crosslinking agent to 5 parts by mass or more, more preferably 10 parts by mass or more, and even more preferably 15 parts by mass or more, per 100 parts by mass of the (A) resin, pattern shrinkage during curing is reduced. Furthermore, by setting the content of the (C) thermal crosslinking agent to 50 parts by mass or less, more preferably 40 parts by mass or less, and even more preferably 30 parts by mass or less, per 100 parts by mass of the (A) resin, a decrease in the elongation of the cured product can be prevented. 【0178】 <(D) Solvent> The positive-type photosensitive resin composition of the present invention preferably further contains (D) solvent. The inclusion of (D) solvent improves coatability and allows for the formation of a homogeneous photosensitive resin film. Known solvents can be used as long as they do not impair the effects of the present invention. The solvent (D) is not particularly limited as long as it can dissolve or disperse the resin (A) and the photoacid generator (B), but amide solvents, ester solvents, alcohol solvents, ether solvents, ketone solvents, dimethyl sulfoxides, etc., can be suitably used. 【0179】 Specific examples of amide solvents include N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutyric acid amide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, and N,N-dimethylpropylene urea. 【0180】 Specific examples of ester solvents include γ-butyrolactone, δ-valerolactone, propylene carbonate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, propylene glycol monomethyl ether acetate, 3-methoxy-1-butyl acetate, 3-methyl-3-methoxy-1-butyl acetate, ethyl acetoethyl acetate, and cyclohexanol acetate. 【0181】 Specific examples of alcohol-based solvents include methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, t-butanol, 3-hydroxy-3-methyl-2-butanone, 5-hydroxy-2-pentanone, 4-hydroxy-4-methyl-2-pentanone (diacetone alcohol), ethyl lactate, butyl lactate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether, propylene glycol mono-t-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monomethyl ether, 3-methoxy-1-butanol, 3-methyl-3-methoxy-1-butanol, ethylene glycol, propylene glycol, and the like. 【0182】 Specific examples of ether-based solvents include diethyl ether, diisopropyl ether, di-n-butyl ether, diphenyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, 1,2-dimethoxyethane, 1,2-diethoxyethane, and dipropylene glycol dimethyl ether. Specific examples of ketone solvents include methyl isobutyl ketone, diisopropyl ketone, diisobutyl ketone, acetylacetone, cyclopentanone, cyclohexanone, cycloheptanone, and dicyclohexyl ketone. 【0183】 The solvent (D) preferably includes an aprotic solvent having a relative permittivity in the range of 5 to 20, more preferably a relative permittivity of 6 to 19, and even more preferably a relative permittivity of 7 to 19. 【0184】 The presence of an aprotic solvent having a dielectric constant in the range of 5 to 20 in the solvent (D) improves the storage stability of the positive-type photosensitive resin composition as a solution. 【0185】 Examples of aprotic solvents with a dielectric constant in the range of 5 to 20 include tetrahydrofuran (dielectric constant 7.6), propylene glycol monomethyl ether acetate (8.3), methyl isobutyl ketone (13.1), cyclopentanone (14.5), cyclohexanone (18.3), and methyl ethyl ketone (18.5). 【0186】 The solvent (D) is preferably an aprotic solvent having 3 to 12 carbon atoms, and more preferably has 4 to 10 carbon atoms. Aprotic solvents having 3 to 12 carbon atoms have excellent solubility for the resin (A) used in the photosensitive resin composition of the present invention. Therefore, by using an aprotic solvent having 3 to 12 carbon atoms in the photosensitive resin composition of the present invention, the solid content concentration of the photosensitive resin composition can be increased, and by applying a composition containing such solvent, it becomes easy to obtain a photosensitive resin film with a large film thickness, for example, 1 μm or more. 【0187】 In the present invention, the content of solvent (D) is preferably 100 parts by mass or more per 100 parts by mass of resin (A) in order to enhance the stability of the solution, while it is preferable to have a content of 1,500 parts by mass or less in order to form a thick film of the photosensitive resin composition, specifically a film with a thickness of 1 μm or more. 【0188】 <Other ingredients> The photosensitive resin composition of the present invention may contain, to the extent that it does not hinder the objectives of the present invention, and for the purpose of providing additional functions, dissolution accelerators, sensitizers, silane coupling agents, surfactants, and the like. 【0189】 <Cured product> The cured product of the present invention is obtained by curing the photosensitive resin composition of the present invention. In other words, curing refers to the process of promoting intramolecular cyclization reactions or thermal crosslinking reactions through heat treatment or the like. 【0190】 The curing conditions involve applying a temperature of 150°C to 320°C to promote a thermal crosslinking reaction, thereby improving heat resistance and chemical resistance. This heat treatment can be performed by selecting a temperature and gradually increasing it, or by selecting a temperature range and continuously increasing the temperature for 5 minutes to 5 hours. For example, heat treatment can be performed at 130°C and 200°C for 30 minutes each. In this invention, the lower limit of the curing conditions is preferably 170°C or higher, but it is more preferable to be 170°C or higher to ensure sufficient curing. The upper limit of the curing conditions is preferably 280°C or lower. 【0191】 Furthermore, it is preferable that the cured product of the present invention has a stepped pattern. In this invention, a stepped pattern refers to a stepped pattern in which, when viewed from a cross-section 3 perpendicular to the pattern opening 2 as shown in Figure 1, the thickness increases without any decrease in thickness from the pattern edge position 4 to the position 5 where the pattern film thickness is thickest, as shown in Figure 2. More specifically, with the pattern edge position 4 as the origin, the direction toward the position 5 where the pattern film thickness is thickest as the x-axis, and the pattern height direction as the y-axis, and the height of the pattern cross-section at position x as y, a stepped pattern is defined as a pattern where the change in y (the value of the derivative of y) Δy / Δx with respect to an increase in x is 0 or greater from position 4 to position 5, and there is at least one region where the value temporarily decreases and then increases again before reaching position 5. For example, Figures 3-1 and 3-2 can be considered stepped patterns, but Figure 3-3 does not meet the definition of a stepped pattern because there is no region where the value of Δy / Δx temporarily decreases and then increases again. 【0192】 <Method for manufacturing a cured product having a stepped pattern (1)> The method for producing a cured product having a stepped pattern according to the present invention is: The method for producing the present invention comprises the steps of: a) applying and drying the photosensitive resin composition of the present invention onto a substrate to form a photosensitive resin film; b) exposing at least a portion of the photosensitive resin film or the heat-pressed photosensitive resin composition through a halftone photomask; c) developing the exposed portion with an alkaline aqueous solution; and d) heat-treating the developed photosensitive resin film or the developed heat-pressed photosensitive resin composition. The cured product obtained in this way can have a reduced contact area with the vapor deposition mask placed on the pattern. 【0193】 The present invention provides a method for producing a cured product having a stepped pattern, which includes the step of applying the photosensitive resin composition of the present invention onto a substrate to form a photosensitive resin film. 【0194】 The substrate is not particularly limited, but it is preferably selected from the group consisting of glass, silicon wafer, ceramic deposited substrate, metal plated substrate, sapphire, and gallium arsenide. 【0195】 A known method can be used to apply the photosensitive composition of the present invention onto a substrate. Examples of equipment used for application include full-surface coating equipment such as spin coating, dip coating, curtain flow coating, spray coating, or slit coating, or printing equipment such as screen printing, roll coating, microgravure coating, or inkjet. 【0196】 After application, the film is dried to form a photosensitive resin film. Drying is performed using a vacuum drying apparatus or a heating device such as a hot plate or oven. When using a heating device, it is preferable to dry the film at a temperature range of 50 to 150°C for 30 seconds to 30 minutes. The film thickness of the photosensitive resin film is preferably 0.1 to 100 μm. 【0197】 The present invention relates to a method for producing a cured product having a stepped pattern, which includes the step of exposing at least a portion of the photosensitive resin film through a halftone photomask. For example, in the case of a positive-type photosensitive resin, by using a halftone photomask having a light-transmitting portion, a light-blocking portion, and a semi-transparent portion that transmits 1 to 99% of the light in the light-transmitting portion, it is possible to adjust the remaining film in the halftone portion to 10 to 80% of the unexposed portion, and a stepped pattern is formed after development. 【0198】 For halftone photomasks, those described in WO2019-182041, for example, are preferably used. 【0199】 The wavelength of the exposure light used is not particularly limited, and examples include light with wavelengths of 300 to 450 nm, such as the g-line (436 nm), i-line (365 nm), and h-line (405 nm). Among these, it is preferable to irradiate with light having a wavelength of 365 nm. Examples of light sources used in the exposure process include various lasers, light-emitting diodes (LEDs), ultra-high pressure mercury lamps, high-pressure mercury lamps, low-pressure mercury lamps, and metal halide lamps. Furthermore, the wavelength of the irradiated light may be adjusted as needed by passing it through spectral filters such as long-wavelength cut filters, short-wavelength cut filters, and bandpass filters. 【0200】 After exposure, post-exposure baking may be performed as needed. Post-exposure baking can be expected to improve resolution after development or increase the tolerance range of development conditions. Post-exposure baking can be performed using an oven, hot plate, infrared, flash annealing device, laser annealing device, etc. The post-exposure baking temperature is preferably 50 to 170°C, and more preferably 60 to 150°C. The post-exposure baking time is preferably 10 seconds to 1 hour, and more preferably 30 seconds to 30 minutes. 【0201】 The present invention provides a method for producing a cured product having a stepped pattern, which includes the step of developing the exposed photosensitive resin film with an alkaline aqueous solution. In the case of a photosensitive resin film that has been exposed in halftone, the stepped pattern is formed in a single development step. 【0202】 The developing solution used for developing is an alkaline aqueous solution containing an alkaline compound. Examples of alkaline compounds include tetramethylammonium hydroxide, potassium hydroxide, and sodium carbonate. In some cases, polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, and dimethylacrylamide, alcohols such as methanol, ethanol, and isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone may be added to these alkaline aqueous solutions, either individually or in combination. 【0203】 After development, it is preferable to rinse with an organic solvent or water. When using an organic solvent, in addition to the developer mentioned above, examples include ethylene glycol monomethyl ether acetate and propylene glycol monomethyl ether acetate. When using water, alcohols such as ethanol and isopropyl alcohol, or esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to the water for rinsing. 【0204】 The present invention provides a method for producing a cured product having a stepped pattern, which includes a step of heat-treating a developed photosensitive resin film. 【0205】 After development, a temperature of 150°C to 320°C is applied to promote imide ring closure, oxazole ring closure, or thermal crosslinking reaction, thereby improving heat resistance and chemical resistance. This heat treatment can be performed by selecting a temperature and gradually increasing it, or by selecting a temperature range and continuously increasing the temperature for 5 minutes to 5 hours. For example, heat treatment can be performed at 130°C and 200°C for 30 minutes each. In this invention, the lower limit of the curing conditions is preferably 170°C or higher, but it is more preferable to be 180°C or higher to ensure sufficient curing. The upper limit of the curing conditions is preferably 280°C or lower. 【0206】 <Photosensitive resin sheet> The photosensitive resin composition of the present invention is not limited in shape and may be in the form of a paste or a sheet, for example. 【0207】 The photosensitive resin sheet of the present invention is a photosensitive resin sheet formed in a sheet shape on a support using the photosensitive resin composition of the present invention. The photosensitive resin sheet of the present invention refers to a sheet in which the photosensitive resin composition of the present invention is applied to a support, dried at a temperature and time range that allows the solvent to evaporate, and the photosensitive resin composition of the present invention is not completely cured, and is in a state in which it is soluble in an organic solvent. 【0208】 The support is not particularly limited, but various commercially available films such as polyethylene terephthalate (PET) film, polyphenylene sulfide film, and polyimide film can be used. The bonding surface between the support and the photosensitive resin composition may be surface-treated with silicone, silane coupling agents, aluminum chelating agents, polyurea, etc., to improve adhesion and release properties. The thickness of the support is not particularly limited, but from the viewpoint of workability, it is preferably in the range of 10 to 100 μm. Furthermore, a protective film may be placed on the film surface to protect the film surface of the photosensitive resin composition obtained by coating. This protects the surface of the photosensitive resin composition from pollutants such as dust and dirt in the atmosphere. 【0209】 Methods for applying a photosensitive resin composition to a support include spin coating using a spinner, spray coating, roll coating, screen printing, blade coater, die coater, calender coater, meniscus coater, bar coater, roll coater, comma roll coater, gravure coater, screen coater, and slit die coater. The coating film thickness varies depending on the coating method, the solid content concentration of the composition, viscosity, etc., but generally, the film thickness after drying is preferably 0.5 μm to 100 μm from the viewpoint of coating film uniformity. 【0210】 For drying, ovens, hot plates, infrared radiation, etc., can be used. The drying temperature and drying time should be within a range that allows the solvent to evaporate, and it is preferable to set them appropriately within a range that leaves the photosensitive resin composition uncured or semi-cured. Specifically, it is preferable to dry at a temperature of 40°C to 150°C for 1 minute to several tens of minutes. Alternatively, these temperatures may be combined and gradually increased; for example, heat treatment may be performed at 80°C and 90°C for 2 minutes each. 【0211】 <Method for manufacturing a cured product having a stepped pattern (2)> Another embodiment of the method for producing a cured product having a stepped pattern of the present invention is The method for producing the product comprises the steps of: a) using the photosensitive resin sheet of the present invention to heat-press a photosensitive resin composition of the present invention onto a substrate; b) exposing at least a portion of the heat-pressed photosensitive resin composition through a halftone photomask; c) developing the exposed heat-pressed photosensitive resin composition with an alkaline aqueous solution; and d) heat-treating the developed photosensitive resin film or the developed heat-pressed photosensitive resin composition. 【0212】 The cured product obtained in this way is mainly composed of polyimide, and therefore has excellent heat resistance, electrical insulation properties, and mechanical properties. 【0213】 The aforementioned substrates include, but are not limited to, silicon wafers, ceramics, gallium arsenide, organic circuit boards, inorganic circuit boards, and those on which circuit components are arranged. Examples of organic circuit boards include glass-based copper-clad laminates such as glass cloth epoxy copper-clad laminates, composite copper-clad laminates such as glass nonwoven fabric epoxy copper-clad laminates, heat-resistant and thermoplastic substrates such as polyetherimide substrates, polyetherketone substrates, and polysulfone substrates, and flexible substrates such as polyester copper-clad film substrates and polyimide copper-clad film substrates. Examples of inorganic circuit boards include ceramic substrates such as alumina substrates, aluminum nitride substrates, and silicon carbide substrates, and metallic substrates such as aluminum-based substrates and iron-based substrates. Examples of circuit components include conductors containing metals such as silver, gold, and copper, resistors containing inorganic oxides, low dielectrics containing glass-based materials and / or resins, high dielectrics containing resins or high dielectric constant inorganic particles, and insulators containing glass-based materials. 【0214】 The process of laminating the photosensitive resin sheet onto the substrate is not particularly limited, but known methods can be used. For example, if the photosensitive resin sheet has a protective film, the support is peeled off while leaving the protective film, the photosensitive resin composition with the protective film attached is placed opposite the substrate, and they are bonded together by thermal compression. Thermal compression can be performed by thermal pressing, thermal lamination, thermal vacuum lamination, etc. Thermal lamination is preferred among these. The bonding temperature is preferably 40°C or higher from the viewpoint of adhesion to the substrate and embedding. In addition, to prevent the resin composition film from hardening during bonding and thus reducing the resolution of pattern formation in the exposure and development process, the bonding temperature is preferably 150°C or lower. 【0215】 The steps of exposing the photosensitive resin sheet to light, developing the exposed photosensitive resin sheet with an alkaline aqueous solution, and heat-treating the developed photosensitive resin sheet are not particularly limited, but are preferably carried out in the same manner as in the method for producing a cured product having a stepped pattern (1). 【0216】 <Elements and articles equipped with hardened materials> Examples of elements and articles comprising the cured product of the present invention include electronic components and electronic devices. Examples of electronic components include semiconductor devices, antennas, display devices, metal-clad laminates, wiring boards, semiconductor packages, active components including semiconductor devices, or passive components. Examples of display devices include organic EL displays, quantum dot displays, micro-light-emitting diode (hereinafter referred to as "LED") displays, mini-LED displays, or liquid crystal displays. 【0217】 Furthermore, it can be suitably used as an interlayer insulating film between redistributions on substrates on which semiconductors and LED chips are mounted. 【0218】 <Semiconductor device> The cured product obtained by curing the photosensitive resin composition of the present invention can be used in electronic components such as semiconductor devices. In other words, a semiconductor device of the present invention has the cured product of the present invention. In the present invention, a semiconductor device refers to any device that can function by utilizing the characteristics of semiconductor elements. Electro-optical devices and semiconductor circuit boards with semiconductor elements connected to a substrate, stacks of multiple semiconductor elements, and electronic devices including these are all included in semiconductor devices. Electronic components such as interposers for connecting semiconductor elements to a substrate are also included in semiconductor devices. Specifically, the cured product obtained by curing the photosensitive resin composition of the present invention has excellent electrical insulation, mechanical strength, adhesion, and heat resistance, so it is preferable that it is used in semiconductor devices where it is arranged as a surface protective film such as a passivation film or buffer coat film on a semiconductor element, an interlayer insulating film between rewirings formed on the surface of a semiconductor element, an insulating film between elements when multiple semiconductor elements are joined together, or an insulating film between wiring layers of a multilayer wiring substrate for high-density mounting or an interposer. 【0219】 More preferably, the semiconductor device is one in which a cured product obtained by curing the photosensitive resin composition of the present invention is disposed as a surface protective film for a semiconductor or as an interlayer insulating film between redistributions. By arranging the cured film of the photosensitive composition as a surface protective film for a semiconductor or as an interlayer insulating film between redistributions, a highly reliable semiconductor device can be made. 【0220】 More preferably, the semiconductor device is one in which the rewiring and the interlayer insulating film are repeatedly arranged in 2 to 10 layers. By repeatedly arranging the rewiring and the interlayer insulating film in 2 to 10 layers, the semiconductor device can be miniaturized. 【0221】 <Display device> The display device of the present invention has a cured product of the present invention. Specifically, the display device of the present invention is a display device comprising a first electrode formed on a substrate, an insulating layer formed to partition pixels provided on the first electrode, and a second electrode provided opposite the first electrode, wherein the insulating layer is preferably a cured product of the present invention. The insulating layer can be formed by applying and drying the photosensitive resin composition of the present invention on a substrate on which the first electrode is formed, or by laminating a sheet-like photosensitive resin composition, and then going through exposure, development, and curing processes to form a pattern of the insulating layer produced by the cured product of the present invention. 【0222】 Another aspect of the display device of the present invention is a display element comprising a thin-film transistor (TFT) formed on a substrate and a planarizing film covering irregularities on the substrate on which the TFT is formed, wherein the planarizing film is a cured product of the present invention. 【0223】 Specifically, it is preferable that the display element has a drive circuit, a planarization layer, a first electrode, an insulating layer, an emitting layer, and a second electrode on a substrate, and that either or both of the planarization layer and the insulating layer are cured products of the present invention. Taking an active matrix type display element as an example, it has a TFT and wiring located on the side of the TFT and connected to the TFT on a substrate such as glass or a resin film, a planarization layer covering the irregularities thereon, and a display element further provided on the planarization layer. The display element and the wiring are connected via contact holes formed in the planarization layer. Since the cured product obtained by curing the photosensitive resin composition of the present invention has excellent planarization properties and pattern dimensional stability, it is preferable to incorporate it as a planarization layer in a display device. In particular, in recent years, flexible display devices have become mainstream, and the substrate having the aforementioned drive circuit may be a display device made of a resin film. [Examples] 【0224】 The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these specific examples. The names of the compounds used, for which abbreviations are used, are shown below. (Diamine compounds) BAP: 2,2-bis(3-amino-4-hydroxyphenyl)propane 6FAP:2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (Acid dianhydrides, dicarboxylic acid derivatives) ODPA: 4,4'-Oxydiphthalic anhydride CHDA: 1,2,4,5-Cyclohexanetetracarboxylic acid dianhydride DEDC: 4,4'-Oxybis(benzoyl chloride) CHDC:1,4-Cyclohexanedicarboxylic acid dichloride MAP:3-aminophenol PAPAC:4-ethynylaniline BZC: Chloride benzoate MC: Methacrylate Chloride (Photoacid generator) PAG-103: “Irgacure” (registered trademark) PAG-103 (benzeneacetonitrile, 2-methyl-α-[[(propylsulfonyl)oxy]imino]-3(2H)-thienylidene, manufactured by BASF Japan) WPAG-199: Bis(4-methylphenylsulfonyl)diazomethane, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. (others) Lutidine: 2,6-Lutidine CP: Cyclopentanone NMP:N-methyl-2-pyrrolidone GBL: γ-Butyrolactone MPA: 3-Methoxy-N,N-dimethylpropanamide IPVE: Isopropyl vinyl ether DHP:3,4-dihydro-2H-pyran HMOM: HMOM-TPHAP(4,4',4''-ethyridinetris(2,6-bis(methoxymethyl)phenol, manufactured by Honshu Chemical Industry Co., Ltd.). 【0225】 (1) Protection rate (m 11 +m 12 , m 21 +m 22 , m 31 +m 32 ), and introduction ratio (m 11 / m 12 , m 21 / m 22 , m 31 / m 32 Calculation of ) 400MHz, 1Using a 1H-NMR (nuclear magnetic resonance) spectrometer (AL-400, JEOL Ltd.), the results of measurements taken 16 times in a deuterated dimethyl sulfoxide solution were used in the calculations. Let M1 and N1 be the integral values ​​of the protons of the phenolic hydroxyl group and the aromatic ring in the resin before protection, respectively. Let N2 be the integral value of the protons of the aromatic ring in the resin after protection. When the resin is protected by the structures of equations (3) and (4), let M3 and M4 be the integral values ​​of the protons of the methyl group adjacent to the tertiary carbon between the bond point and the ether group in equations (3) and (4), respectively. Then, the protection rates L3 (mol%) and L4 (mol%) according to equations (3) and (4) were calculated as follows. L3 = ((M3 / 3) / N2) / (M1 / N1) × 100 L4 = ((M4 / 3) / N2) / (M1 / N1) × 100 When the resin is protected by the structure of formula (5), the protection rate L5 (mol%) by formula (5) was calculated as follows, with M5 being the integral value of the protons adjacent to the tertiary carbon between the bond point of formula (5) and the ether group, or of the methylene group. L5 = ((M5 / 2) / N2) / (M1 / N1) × 100 When the resin is protected by the structure of equation (6), the protection rate L6 (mol%) by equation (6) was calculated as follows, given that M6 and M7 are the integral values ​​of the protons of the methyl group adjacent to the quaternary carbon in equation (6) by j1 and the methylene group adjacent to it by k1 (where j1 and k1 are integers from 0 to 3, and j1 + k1 = 3), respectively. L6=(((M6+M7) / (j1×3+k1×2)) / N2) / (M1 / N1)×100 When the resin is protected by the structure of equation (7), the protection rate L7 (mol%) by equation (7) was calculated as follows, given that the integral values ​​of the protons of the methyl group adjacent to the quaternary carbon in equation (7) by j2 and the methylene group adjacent to it by k2 (where j2 and k2 are integers from 0 to 3, and j2 + k2 = 3) are M8 and M9, respectively. L7=(((M8+M9) / (j2×3+k2×2)) / N2) / (M1 / N1)×100 From here, the protection rate (m 11 +m 12, m 21 +m 22 , m 31 +m 32 ), and introduction ratio (m 11 / m 12 , m 21 / m 22 , m 31 / m 32 The following calculations were performed, and the protection rate was rounded to the first decimal place of the calculated value, while the adoption rate was rounded to the second decimal place of the calculated value. Protection rate (m 11 +m 12 , m 21 +m 22 , m 31 +m 32 ) = L3 + L4 + L5 + L6 + L7 Introduction ratio (m 11 / m 12 , m 21 / m 22 , m 31 / m 32 ) = (L3 + L4) / (L5 + L6 + L7). 【0226】 (3) Solid content concentration The solid content concentration of the resin solution was determined by the following method: 1.5 g of the solution was weighed into an aluminum cup and heated on a hot plate at 180°C for 30 minutes to evaporate the liquid. The mass of the solid content remaining in the aluminum cup after heating was weighed, and the solid content concentration was calculated by rounding the value obtained from the ratio of the solid content to the mass before heating to two decimal places. 【0227】 (4) Sensitivity evaluation A pre-baked film of the photosensitive resin composition was prepared by spin-coating an 8-inch silicon wafer using a coating and developing system ACT-8 (manufactured by Tokyo Electron Ltd.) and heating at 100°C for 2 minutes to produce a film with a thickness of 4.0 μm. The film thickness was measured using an optical interferometry film thickness analyzer Lambda Ace STM-602 (manufactured by SCREEN Holdings Co., Ltd.) under conditions of a refractive index of 1.629. Subsequently, exposure was measured using an i-line stepper NSR-2005i9C (manufactured by Nikon Corporation) through a mask with a 20 μm contact hole pattern at exposure doses of 5 to 300 mJ / cm². 2 Within the range of 5 mJ / cm 2 Each exposure was performed. After exposure, using the ACT-8 developing apparatus, a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH, manufactured by Tama Chemical Industry Co., Ltd.) was used as the developer, and the material was developed for 10 to 80 seconds. After that, it was rinsed with distilled water, shaken dry, and a relief pattern was obtained. 【0228】 The relief pattern was observed at 20x magnification using an FDP microscope MX61 (manufactured by Olympus Corporation), and the aperture diameter of the contact holes was measured. The minimum exposure dose at which the aperture diameter of the contact holes reached 20 μm was determined and defined as the sensitivity. The results were evaluated as follows, and a sensitivity of 400 mJ / cm² was determined. 2 Grades A through E were considered passing grades, with A being the highest. A: Sensitivity is 100 mJ / cm 2 less than B: Sensitivity is 100 mJ / cm 2 More than 200mJ / cm 2 less than C: Sensitivity is 200 mJ / cm 2 More than 300mJ / cm 2 less than D: Sensitivity is 300 mJ / cm 2 More than 400mJ / cm 2 less than E: Sensitivity is 400 mJ / cm 2 More than 500mJ / cm 2 less than F: Sensitivity is 500 mJ / cm 2 That's all. 【0229】 (5) Halftone exposure characteristics A pre-baked film with a thickness of 4.0 μm was prepared using the same method as in (4). This pre-baked film was exposed using an i-line stepper NSR-2005i9C (manufactured by Nikon Corporation) via a halftone photomask, so that a 20 μm area around a 30 μm contact hole (opening) was exposed with 50% of the exposure amount of the opening. The opening was created at a total of seven points: the center of the 8-inch wafer and along the wafer diameter at -75 mm, -50 mm, -25 mm, 25 mm, 50 mm, and 75 mm from the center. The exposure amount at this time was 1.2 times the minimum exposure amount determined in (4). After exposure, the film was developed using the same method as in (4) to obtain a relief pattern. 【0230】 At this time, using the same method as in (4), the film thickness T1 at the thickest location (position 10 in Figure 4) and the film thickness T2 at the center of the 50% exposure area (position 11 in Figure 4) were measured for each of the seven patterns. The average value of the calculated T2 / T1 for each of the seven patterns was rounded to the third decimal place, and the results were judged as follows, with A to C being considered passing grades. A is the best. A: The value of T2 / T1 is 0.5 or greater. B: The value of T2 / T1 is between 0.3 and 0.5. The value of C:T2 / T1 is between 0.1 and 0.3. The value of D:T2 / T1 is less than 0.1. 【0231】 (6) Dimensional reproducibility of step patterns A relief pattern was prepared using the same method as in (5), and heat-treated at 250°C for 30 minutes under a nitrogen atmosphere (oxygen concentration of 20 ppm by volume or less) using a clean oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.). After that, the cross-section 12 of the pattern was observed with a field emission scanning electron microscope S-4800 (manufactured by Hitachi High-Technologies Corporation), and the change in thickness of the cross-section was measured. For this cross-section, the position 4 of the pattern edge was set as the origin as in Figure 2, the direction toward the position 5 where the pattern film thickness is thickest was set as the x-axis, and the pattern height direction was set as the y-axis, and the thickness of the pattern cross-section at position x was set as y. If the value of Δy / Δx was not 0 or greater between positions 4 and 5 at all 7 exposed locations, and there was not at least one region where the value of Δy / Δx decreased and then increased again between positions 4 and 5, it was classified as E and was a failure. If both conditions were met at all 7 locations, it was classified as D or higher and was a pass. Furthermore, the average length of the x region where 0 ≤ Δy / Δx < 0.15 between positions 5 and 6 was rounded to two decimal places, and the results were then classified as A to D as follows. Note that A is the best. A: The region of x where 0 ≤ Δy / Δx < 0.15 is 10 μm or larger. B: The region of x where 0 ≤ Δy / Δx < 0.15 is between 5 μm and 10 μm. C: The region of x where 0 ≤ Δy / Δx < 0.15 is between 1 μm and 5 μm. D: The region of x where 0 ≤ Δy / Δx < 0.15 is between 0 μm and 1 μm. 【0232】 Synthesis Example 1: Synthesis of Polyimide (PI-01) Under a stream of dry nitrogen, 33.0 g (90 mmol) of 6FAP was dissolved in 180 g of NMP in a three-necked flask. Then, 31.0 g (100 mmol) of ODPA was added along with 40 g of NMP. After stirring at 60°C for 2 hours, 1.86 g (20 mmol) of aniline was added along with 40 g of NMP, and stirring was continued at 60°C for another 2 hours. The temperature of this solution was raised to 200°C and stirred for another 6 hours. After the reaction was complete, the solution was added to 2 liters of pure water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with pure water, and then dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide (PI-01). The results are shown in Table 1. 【0233】 Synthesis Examples 2-5: Synthesis of Polyimides (PI-02-PI-05) The synthesis was carried out in the same manner as in Synthesis Example 1, except that the types and amounts of acidic dianhydrides, diamines, and monoamines were changed as shown in Table 1. The results are shown in Table 1. 【0234】 Synthesis Example 6: Synthesis of Polybenzoxazole Precursor (PBO-01) Under a stream of dry nitrogen, 36.6 g (100 mmol) of 6FAP was dissolved in 150 g of NMP in a three-necked flask. The solution was then cooled to -15°C. After confirming that the solution temperature was -15°C, 25.1 g (85 mmol) of DEDC was added along with 30 g of NMP. The mixture was stirred at -10°C for 30 minutes, then the temperature was raised to 20°C and stirred for another 2 hours. The solution was cooled again to -15°C. After confirming that the solution temperature was -15°C, 4.22 g (30 mmol) of BZC was added along with 10 g of NMP. After the addition was complete, stirring was continued at 20°C for 2 hours. After the reaction was complete, the solution was added to 2 liters of pure water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with pure water, and then dried in a vacuum dryer at 50°C for 72 hours to obtain polybenzoxazole precursor (PBO-01). The results are shown in Table 1. 【0235】 Synthesis Examples 7-9: Synthesis of Polybenzoxazole Precursors (PBO-02-PBO-04) The synthesis was carried out in the same manner as in Synthesis Example 6, except that the types and amounts of dicarboxylic acid derivatives, diamines, and monocarboxylic acid derivatives were changed as shown in Table 1. The results are shown in Table 1. 【0236】 Synthesis Example 10: Synthesis of Polybenzoxazole Precursor (PBO-05) Under a stream of dry nitrogen, 23.2 g (90 mmol) of BAP and 2.18 g (20 mmol) of MAP were dissolved in 150 g of MPA in a three-necked flask. The solution was then cooled to -15°C. After confirming that the solution temperature was -15°C, 29.5 g (100 mmol) of DEDC was added along with 30 g of MPA. The mixture was stirred at -10°C for 30 minutes, then the temperature was raised to 20°C and stirred for a further 4 hours. After the reaction was complete, the solution was added to 2 liters of pure water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with pure water, and then dried in a vacuum dryer at 50°C for 72 hours to obtain a polybenzoxazole precursor (PBO-05). The results are shown in Table 1. 【0237】 Synthesis Example 11: Synthesis of Polyimide Precursor (PP-01) Under a stream of dry nitrogen, 31.0 g (100 mmol) of ODPA and 9.21 g (200 mmol) of ethanol were added to 200 g of NMP. 20.2 g (200 mmol) of triethylamine was slowly added dropwise over 1 hour at room temperature, and the mixture was then stirred at room temperature for 12 hours. 33.0 g (90 mmol) of 6FAP and 1.86 g (20 mmol) of aniline were then added, followed by 75.9 g (200 mmol) of 1-[bis(dimethylamino)methylene]-1H-benzotriazolium 3-oxidehexafluorophosphate and 176 g of NMP. The mixture was stirred at room temperature for 24 hours. After the reaction was complete, 60 g of acetic acid was added, and the solution was added to 2 L of pure water to precipitate the precipitate. This precipitate was collected by filtration, washed three times with pure water, and then dried in a vacuum dryer at 50°C for 72 hours to obtain polyimide precursor (PP-01). The results are shown in Table 1. 【0238】 Synthesis Examples 12-15: Synthesis of Polyimide Precursors (PP-02-PP-05) The synthesis was carried out in the same manner as in Synthesis Example 11, except that the types and amounts of acidic dianhydrides, diamines, and monoamines were changed as shown in Table 1. The results are shown in Table 1. 【0239】 [Table 1] 【0240】 Synthesis Example 16: Synthesis of a hydroxyl group-protected resin (PI-A1) Under a stream of dry nitrogen, 18.7 g of PI-01 as the base polymer and 45.5 g of CP as the solvent were weighed and dissolved in a three-necked flask. 3.45 g of IPVE and 4.21 g of DHP were added as protective agents, and the mixture was stirred at 0°C for 1 hour. Next, 0.65 g of trifluoroacetic acid was added as a catalyst, and the mixture was stirred at 0°C for 3 hours. After stirring, the acid catalyst was neutralized with saturated sodium bicarbonate aqueous solution, and the water bath was removed. The organic layer was then washed twice with water. Subsequently, to remove unreacted IPVE and DHP, low-boiling point residues were removed using a rotary evaporator. The solid content of the solution was then measured, and CP was added to achieve a solid content of 40.0% by mass, obtaining a 40.0% by mass solution of resin (PI-A1) in which hydroxyl groups were protected by acid-degradable groups. The percentage of phenolic hydroxyl groups protected by acid-dissociable groups (protection rate: m1 + m2) and the introduction ratio (m1 / m2) were 98 mol% and 0.8, respectively. The results are shown in Table 2. 【0241】 Synthesis Examples 17-60: Synthesis of hydroxyl group-protected resins (PI-A2-PI-A15, PBO-A1-PBO-A15, PP-A1-PP-A15) The synthesis was carried out in the same manner as in Synthesis Example 16, except that the type and amount of base polymer, solvent, protective agent, and catalyst were changed to the amounts listed in Table 2. The results are shown in Table 2. 【0242】 [Table 2-1] 【0243】 [Table 2-2] 【0244】 Example 1 Under a yellow light, (A) 12.5 g of PI-A1 as the resin, (B) 0.500 g of WPAG-199 as the photoacid generator, 8.40 g of CP and 3.60 g of GBL as solvents, and 25.0 mg of lutidine as an additive were added and stirred to obtain a photosensitive resin composition. 【0245】 The (4) sensitivity, (5) halftone characteristics, and (6) dimensional reproducibility of the step pattern of the prepared photosensitive resin composition were evaluated. The results are shown in Table 3. 【0246】 Examples 2-51, Comparative Examples 1-6 The photosensitive resin composition was prepared and evaluated in the same manner as in Example 1, except that (A) the type and amount of resin, (B) the type and amount of photoacid generator, (C) the type and amount of thermal crosslinking agent, (D) the type and amount of solvent, and the type and amount of other additives were changed as shown in Table 3. The results are shown in Table 3. 【0247】 [Table 3-1] 【0248】 [Table 3-2] [Explanation of symbols] 【0249】 1. Pattern of photosensitive resin composition 2 Pattern Openings 3 cross-sections 4. Position of the pattern edge The thickest position of the 5 film thickness patterns 6 circuit boards 7. Light-shielding area (unexposed area) 8. 50% exposure area 9 100% exposed area 10. Film thickness T1 measurement position 11. Film thickness T2 measurement position 12 Cross-sections for evaluating the dimensional reproducibility of step patterns

Claims

[Claim 1] (A) At least one resin selected from polyimide represented by formula (1), polybenzoxazole precursor represented by formula (2), and polyimide precursor represented by formula (11), and (B) A photosensitive resin composition containing a photoacid generator. 【Chemistry 1】 (In formula (1), R １ and R ２ each represent a tetravalent organic group having 4 to 50 carbon atoms, and they may be the same or different. R ３ represents a trivalent to hexavalent organic group having 3 to 50 carbon atoms. R ４ represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid dissociable group having 3 to 50 carbon atoms, and a １ number of R ４ may be the same or different. A represents an oxygen atom or a sulfur atom, and a １ represents an integer of 1 to 4. R ５ represents a divalent organic group having 2 to 50 carbon atoms that does not contain R ３ -(AR ４ )a １ . n １ is 1 or more, n ２ is an integer of 0 or more, and n １ + n ２ is an integer of from 1 to 300. All R in equation (1) ４ When R is set to 100 mol%, ４ However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m １１ (mol%) is 100 ≥ m １１ > 0 and R ４ However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m １２ (mol%) is 100 ≥ m １２ > 0. 【Chemistry 2】 (In formula (2), R ６ and R ７ R represents a divalent organic group with 4 to 50 carbon atoms, and may be the same or different. ８ R represents a 3-6 valent organic group with 3-50 carbon atoms. ９ represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid-dissociable group having 3 to 50 carbon atoms, ２ Individual R ９ They may be the same or different. A represents an oxygen atom or a sulfur atom, and a ２ R represents an integer between 1 and 4. １０ R has 2 to 50 carbon atoms. ８ - (AR ９ ) a ２ Represents a divalent organic group that does not contain n. ３ n is 1 or greater. ４ n is a non-negative integer, and n ３ +n ４ The integer is between 1 and 300. All R in equation (2) ９ When R is set to 100 mol%, ９ However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m ２１ (mol%) is 100 ≥ m ２１ > 0 and R ９ However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m ２２ (mol%) is 100 ≥ m ２２ > 0. 【Transformation 3】 (In formula (11), R ３２ and R ３３ R represents a trivalent or tetravalent organic group with 4 to 50 carbon atoms, and may be the same or different. ３４ R represents a 3-6 valent organic group with 3-50 carbon atoms. ３５ represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monovalent acid-dissociable group having 3 to 50 carbon atoms, ５ Individual R ３５ They may be the same or different. A represents an oxygen atom or a sulfur atom, and a ５ R represents an integer between 1 and 4. ３６ R has 2 to 50 carbon atoms. ３４ - (AR ３５ ) a ５ Represents a divalent organic group that does not contain R. ３７ and R ３８ represents a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, a ６ Individual R ３７ , and, a ７ Individual R ３８ They may be the same or different. ６、 and a ７ n represents an integer of 1 or 2. １７ n is 1 or greater. １８ n is a non-negative integer, and n １７ +n １８ The integer is between 1 and 300. All R in equation (11) ３５ When R is set to 100 mol%, ３５ However, the total percentage of acid-dissociable groups represented by formula (3) or formula (4) is m ３１ (mol%) is 100 ≥ m ３１ > 0 and R ３５ However, the total percentage of acid-dissociable groups represented by any of formulas (5) to (7) is m ３２ (mol%) is 100 ≥ m ３２ > 0. 【Chemistry 4】 (In equations (3) and (4), R １１ and R １２ Each of these independently represents an alkyl group having 1 to 6 carbon atoms. １３ (where * represents an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 8 carbon atoms; where p and q each independently represent integers from 0 to 2; and where * represents a bond point.) 【Transformation 5】 (In formula (5), R １４ represents an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 8 carbon atoms. r and s each independently represent an integer from 0 to 2. In equations (6) and (7), R １５ ~R ２０ Each of these independently represents an alkyl group having 1 to 6 carbon atoms. * represents a bonding point. [Claim 2] (A) The photosensitive resin composition according to claim 1, wherein the resin is a polyimide represented by formula (1) and / or a polybenzoxazole precursor represented by formula (2). [Claim 3] m １１ + m １２ (mol%) is such that 10 ≤ m １１ + m １２ ≤ 95, and m ２１ + m ２２ (mol%) is such that 10 ≤ m ２１ + m ２２ ≤ 95, and m ３１ + m ３２ (mol%) is such that 10 ≤ m ３１ + m ３２ ≤ 95, the photosensitive resin composition according to claim 1 or 2. [Claim 4] Said m １１ + m １２ When taken as 100 mol%, said m １１ (mol%) and m １２ (mol%) are such that 1 < m １１ / m １２ ≦ 9, and when said m ２１ + m ２２ When taken as 100 mol%, said m ２１ (mol%) and m ２２ (mol%) are such that 1 < m ２１ / m ２２ ≦ 9, and when said m ３１ + m ３２ When taken as 100 mol%, said m ３１ (mol%) and m ３２ (mol%) are such that 1 < m ３１ / m ３２ ≦ 9. The photosensitive resin composition according to claim 1 or 2. [Claim 5] Furthermore, the photosensitive resin composition according to claim 1 or 2, comprising (C) a thermal crosslinking agent. [Claim 6] Formulas (1), (2), and (11) have terminal structures, The photosensitive resin composition according to claim 1 or 2, wherein the terminal structure is a structure containing a thermally crosslinkable group. [Claim 7] R in formula (1) ３ - (AR ４ ) a １ and R in equation (2) above ８ - (AR ９ ) a ２ and R in equation (11) ３４ - (AR ３５ ) a ５ The photosensitive resin composition according to claim 1 or 2, wherein the group is represented by formula (8). 【Transformation 6】 (In formula (8), A represents the same symbol and has the same meaning as in formula (1), R ３９ and R ４０ R in formula (1) is ４ , R in formula (2) ９ , and R in formula (11) ３５ It expresses the same meaning as R ２１ and R ２２ Each of these independently represents a monovalent organic group having 1 to 6 carbon atoms, and t １ and u １ Each of these independently represents an integer from 0 to 4, and X １ represents a direct bond, an aliphatic group having 1 to 10 carbon atoms, an alicyclic group having 1 to 10 carbon atoms, an ether group, a thioether group, or a 9H-fluorene-9,9-diyl group, ３ and a ４ Each of these independently represents an integer between 0 and 2, and 1 ≤ (a ３ +a ４ The equation satisfies ≤ 4, and * represents a connection point. [Claim 8] In the above formula (1), R １ and / or R ２ However, it is a tetravalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or alicyclic structure. In the above formula (2), R ６ and / or R ７ However, it is a divalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or alicyclic structure. In the above formula (11), R ３２ and / or R ３３ The photosensitive resin composition according to claim 1 or 2, wherein the group is a tetravalent organic group having 4 to 50 carbon atoms, having a linear or branched aliphatic structure and / or an alicyclic structure. [Claim 9] The photosensitive resin composition according to claim 1 or 2, wherein the (B) photoacid generator comprises an oximesulfonate compound and / or an imidosulfonate compound. [Claim 10] (A) At least one resin selected from polyimide, polybenzoxazole precursor and polyimide precursor, and (B) Photoacid generator A photosensitive resin composition comprising, The polyimide, polybenzoxazole precursor and polyimide precursor have a hydroxyl group protected by an acid-dissociable group and / or a mercapto group protected by an acid-dissociable group, A photosensitive resin composition comprising two or more acid-dissociable groups with different deprotection rates by acid as the aforementioned acid-dissociable groups. [Claim 11] The photosensitive resin composition according to claim 10, wherein the polyimide, polybenzoxazole precursor and polyimide precursor each contain a diamine residue having an acid-dissociable hydroxyl group and / or an acid-dissociable mercapto group. [Claim 12] A photosensitive resin sheet obtained by forming the photosensitive resin composition described in claim 1 into a sheet on a support. [Claim 13] A cured product obtained by curing the photosensitive resin composition according to claim 1, 2, 10, or 11. [Claim 14] A cured product according to claim 13, having a stepped pattern. [Claim 15] a) A step of applying and drying the photosensitive resin composition according to claim 1, 2, 10, or 11 onto a substrate to form a photosensitive resin film, or a step of using the photosensitive resin sheet according to claim 12 to heat-press the photosensitive resin composition of the present invention onto a substrate. b) Exposing at least a portion of the photosensitive resin film or the thermocompressed photosensitive resin composition through a halftone photomask. c) A step of developing the exposed photosensitive resin film or the exposed thermocompressed photosensitive resin composition with an alkaline aqueous solution, d) A step of heat-treating the developed photosensitive resin film or the developed thermocompressed photosensitive resin composition, A method for manufacturing a cured product having a stepped pattern in this order. [Claim 16] A semiconductor device having the cured product described in claim 13. [Claim 17] A display device having the cured product according to claim 13.

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