Semiconductor equipment

Abstract

This invention provides a new type of semiconductor device that can retain its stored data even when power is unavailable and has no limitations on the number of write cycles. [Solution] The semiconductor device includes a first transistor 160 having a channel forming region 116, a first gate insulating layer 108, a first gate electrode 110, and a first source electrode and first drain electrodes 130a, 130b; a second transistor 162 having an oxide semiconductor layer 140, a second source electrode and second drain electrodes 142a, 142b, a second gate insulating layer 146, and a second gate electrode 148a; and a capacitive element 164 having one of the second source electrode or second drain electrode 142a, a second gate insulating layer, and an electrode 148b superimposed on the second gate insulating layer with one of the second source electrode or second drain electrode, wherein the first gate electrode and one of the second source electrode or second drain electrode are electrically connected to electrode 130c.

Claims

1. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. Either the source or the drain of the second transistor is electrically connected to the gate of the first transistor. The second transistor has a first gate and a second gate, A semiconductor device in which the second gate is given the same potential as the first gate, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second insulating film having a region positioned above the first insulating film, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film and functioning as a gate insulating film of the second transistor, A second conductive film having a region positioned above the third insulating film and functioning as the first gate or the second gate of the second transistor, In a plan view, the first conductive film does not have a region that overlaps with the second channel-forming region. Semiconductor equipment.

2. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. Either the source or the drain of the second transistor is electrically connected to the gate of the first transistor. The second transistor has a first gate and a second gate, A semiconductor device in which the second gate is given the same potential as the first gate, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second insulating film having a region positioned above the first insulating film, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film and functioning as a gate insulating film of the second transistor, A second conductive film having a region positioned above the third insulating film and functioning as the first gate or the second gate of the second transistor, In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. The second insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. The third insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. Semiconductor equipment.

3. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. Either the source or the drain of the second transistor is electrically connected to the gate of the first transistor. The second transistor has a first gate and a second gate, A semiconductor device in which the second gate is given the same potential as the first gate, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second insulating film having a region positioned above the first insulating film, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film and functioning as a gate insulating film of the second transistor, A second conductive film having a region positioned above the third insulating film and functioning as the first gate or the second gate of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film, The first conductive film is electrically connected to the oxide semiconductor film via the third conductive film. In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. In a plan view, the maximum length of the oxide semiconductor film in the channel length direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. In a plan view, the maximum length of the third conductive film in the channel length direction of the second transistor is greater than the maximum length of the third conductive film in the channel width direction of the second transistor. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the region in the channel width direction of the second transistor where the third conductive film overlaps with the first conductive film. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. Semiconductor equipment.

4. The device comprises a first transistor having silicon in its first channel formation region, and a second transistor having an oxide semiconductor in its second channel formation region. Either the source or the drain of the second transistor is electrically connected to the gate of the first transistor. The second transistor has a first gate and a second gate, A semiconductor device in which the second gate is given the same potential as the first gate, A first conductive film having a region positioned above the first channel forming region and functioning as the gate of the first transistor, A first insulating film having a region positioned above the first conductive film, A second insulating film having a region positioned above the first insulating film, An oxide semiconductor film having a region positioned above the second insulating film and having the second channel-forming region, A third insulating film having a region positioned above the oxide semiconductor film and functioning as a gate insulating film of the second transistor, A second conductive film having a region positioned above the third insulating film and functioning as the first gate or the second gate of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film, The first conductive film is electrically connected to the oxide semiconductor film via the third conductive film. In a plan view, the first conductive film does not have an area that overlaps with the second channel-forming area. In a plan view, the maximum length of the oxide semiconductor film in the channel length direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. In a plan view, the maximum length of the third conductive film in the channel length direction of the second transistor is greater than the maximum length of the third conductive film in the channel width direction of the second transistor. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the region in the channel width direction of the second transistor where the third conductive film overlaps with the first conductive film. In a plan view, the maximum length of the first conductive film in the channel width direction of the second transistor is greater than the maximum length of the oxide semiconductor film in the channel width direction of the second transistor. The second insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. The third insulating film has a region in contact with the oxide semiconductor film and contains oxygen and silicon. Semiconductor equipment.

5. In claim 3 or claim 4, The third conductive film has first to third films stacked in order, The first film described above contains titanium, The second film contains aluminum, The 3rd film contains titanium, The first film has a region in contact with the oxide semiconductor film. Semiconductor equipment.

6. In any one of claims 1 to 5, In a plan view, the channel formation region of the first transistor has a region in which current flows in a direction intersecting the channel length direction of the second transistor. Semiconductor equipment.

7. In any one of claims 1 to 6, The first insulating film comprises nitrogen and silicon, Semiconductor equipment.

8. In any one of claims 1 to 7, Information is written to the gate of the first transistor via the second transistor. Semiconductor equipment.

9. In any one of claims 1 to 8, The second transistor has an off-current of 1 × 10⁻⁶. －１３ It is less than or equal to A / μm. Semiconductor equipment.

10. In any one of claims 1 to 9, The oxide semiconductor film comprises In, Ga, and Zn. Semiconductor equipment.

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