Method for generating a semiconductor structure having an interface region containing aggregates

Abstract

The present invention relates, in particular, to a method for generating a structure comprising a processed semiconductor layer and a semiconductor carrier substrate joined at an interface region including a region of direct contact between the layer and the carrier substrate, and an aggregate containing a semiconductor material different from the semiconductor material of the layer and the support substrate. [Solution] A processed layer made of a semiconductor material extending on the main surface, a carrier substrate made of a semiconductor material, and an interface region between the processed layer and the carrier substrate extending parallel to the main surface, the interface region including a direct contact region between the processed layer and the carrier substrate, and an aggregate containing a semiconductor material different from the semiconductor materials of the processed layer and the carrier substrate, having a thickness of 250 nm or less along an axis perpendicular to the main surface, wherein the direct contact region and the aggregate are adjacent on the main surface.

Claims

1. It is a semiconductor structure, - A processed layer made of semiconductor material extending across the main surface, - Carrier substrate made of semiconductor material, - A semiconductor structure comprising an interface region between the processed layer and the carrier substrate extending parallel to the main surface, wherein the interface region includes a region of direct contact between the processed layer and the carrier substrate, and an aggregate comprising a semiconductor material different from the semiconductor materials of the processed layer and the carrier substrate, having a thickness of 250 nm or less along an axis perpendicular to the main surface, the region of direct contact and the aggregate being adjacent on the main surface.

2. The semiconductor structure according to claim 1, wherein the semiconductor material of the processed layer (10) is silicon carbide and has a single-crystal structure, a polycrystalline structure or an amorphous structure.

3. The semiconductor material of the processed layer is selected from silicon carbide, silicon, gallium nitride, gallium arsenide, indium phosphide, and silicon-germanium alloy, and has a single crystal structure, a polycrystalline structure, or an amorphous structure, according to claim 1.

4. The semiconductor structure according to claim 1, wherein the semiconductor material of the carrier substrate (30) is silicon carbide and has a single-crystal structure, a polycrystalline structure or an amorphous structure.

5. The semiconductor material of the carrier substrate is selected from silicon carbide, silicon, gallium nitride, gallium arsenide, indium phosphide, and silicon-germanium alloy, and has a single crystal structure, a polycrystalline structure, or an amorphous structure, according to claim 1.

6. The semiconductor structure according to claim 1, wherein the semiconductor material of the film (2) is selected from silicon or germanium.

7. The semiconductor structure according to claim 1, wherein the aggregate has a thickness of 50 nm or less.

8. The semiconductor structure according to claim 1, wherein the aggregate (21) has a thickness of 40 nm or less.

9. The semiconductor structure according to claim 1, wherein the aggregate has a thickness of 30 nm or less.

10. The aggregate (21) - The first precipitate of the film (2) containing the semiconductor material, - The second precipitate of the film (2) containing the semiconductor material and oxygen, and / or - The cavity of the film (2) lined with the semiconductor material and an oxygen-containing compound, The semiconductor structure according to claim 1, which is in the form of the semiconductor structure described in claim 1.

11. The semiconductor structure according to claim 1, wherein the second precipitate has a substantially triangular shape in a cross-section perpendicular to the main surface (x, y).

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