semiconductor element

Abstract

The present invention provides a semiconductor device that can mitigate the electric field applied to the gate semiconductor layer and the area around the gate electrode. [Solution] The semiconductor device according to the present invention includes a substrate, a channel layer located on the substrate, a barrier layer located on the channel layer, a gate electrode located on the barrier layer, a source electrode and a drain electrode located on both sides of the gate electrode and connected to the channel layer, a first field dispersion layer connected to the source electrode and extending toward the drain electrode on the gate electrode, and a doping region extending from the upper surface of the barrier layer toward the upper surface of the substrate, wherein one side of the doping region is adjacent to the drain electrode from the side of the first field dispersion layer located between the gate electrode and the drain electrode.

Claims

1. circuit board and A channel layer located on the aforementioned substrate, A barrier layer located on the channel layer, A gate electrode located on the barrier layer, Source electrodes and drain electrodes located on both sides of the gate electrode and connected to the channel layer, A first field dispersion layer connected to the source electrode and extending toward the drain electrode on the gate electrode, The barrier layer includes a doping region extending from the upper surface toward the upper surface of the substrate, A semiconductor device characterized in that one side of the doping region is more adjacent to the drain electrode than the side of the first field dispersion layer located between the gate electrode and the drain electrode.

2. The present invention further includes a gate semiconductor layer located between the barrier layer and the gate electrode, The semiconductor device according to claim 1, characterized in that at least a portion of the doping region is in contact with the gate semiconductor layer.

3. The semiconductor element according to claim 2, characterized in that at least a portion of the doping region overlaps the gate electrode and the gate semiconductor layer in a direction perpendicular to the upper surface of the substrate.

4. The system further includes a second field dispersion layer connected to the source electrode and extending toward the drain electrode on the first field dispersion layer, The semiconductor device according to claim 1, characterized in that one side of the doping region is further from the drain electrode than the side of the second field dispersion layer located between the gate electrode and the drain electrode.

5. The semiconductor device according to claim 1, characterized in that the lower surface of the doping region is located at a lower level than the upper surface of the channel layer.

6. The aforementioned doping area is, A first doping region located within the barrier layer and containing the same substance as the barrier layer, A second doping region located within the channel layer and containing the same substance as the channel layer, The semiconductor device according to claim 5, characterized in that the first doping region and the second doping region contain the same dopant.

7. The semiconductor element according to claim 1, characterized in that the lower surface of the doping region is located at a higher level than the lower surface of the barrier layer.

8. A gate semiconductor layer located between the barrier layer and the gate electrode, The present invention further includes a protective layer covering the side and top surfaces of the gate semiconductor layer, The semiconductor device according to claim 1, characterized in that the doping region is separated from the gate semiconductor layer toward the drain electrode.

9. The semiconductor element according to claim 8, characterized in that the gate electrode includes a first portion that penetrates the protective layer and contacts the gate semiconductor layer, a second portion that penetrates the protective layer and contacts the doping region, and a third portion that connects the first portion and the second portion.

10. circuit board and A channel layer located on the aforementioned substrate, A barrier layer located on the channel layer, A gate electrode located on the barrier layer, Source electrodes and drain electrodes located on both sides of the gate electrode and connected to the channel layer, A first field dispersion layer connected to the source electrode and extending toward the drain electrode on the gate electrode, Includes a doping region embedded below the upper surface of the barrier layer, A semiconductor device characterized in that the distance between the doping region and the drain electrode is shorter than the distance between the first field dispersion layer and the drain electrode.

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