Resist composition, resist pattern formation method, compound, and acid diffusion control agent
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO OHKA KOGYO CO LTD
- Filing Date
- 2024-12-13
- Publication Date
- 2026-06-25
Smart Images
Figure 2026104079000001 
Figure 2026104079000002 
Figure 2026104079000003
Abstract
Claims
1. A resist composition that generates acid upon exposure and whose solubility in a developer changes due to the action of the acid, A base component (A) whose solubility in the developer changes due to the action of acid, A resist composition containing a compound (D0) represented by the following general formula (d0). 【Chemistry 1】 [In the formula, T １ This is an aromatic hydrocarbon group containing a thiophene ring. Some or all of the hydrogen atoms of the aromatic hydrocarbon group containing the thiophene ring may be substituted with substituents. １ Ar is a single bond or a divalent linking group. １ is an aromatic hydrocarbon group having at least one halogen atom. The aromatic hydrocarbon group may have substituents other than halogen atoms. q is an integer of 1 or more, and if q is 2 or more, multiple T １ and L １ They may be the same or different. m is an integer greater than or equal to 1, ｍ＋ [This is an m-valent organic cation.]
2. The Ar １ The resist composition according to claim 1, wherein is an aromatic hydrocarbon group having at least one iodine atom.
3. Said L １ The resist composition according to claim 1 or 2, wherein is a single bond or a divalent linking group represented by any of the following formulas (L1-1) to (L1-11). 【Chemistry 2】 [In the formula, * represents a bond with Ar １ and ** represents a bond with T １ and. In formula (L1-3), R １ This is a single bond or a hydrocarbon group. Some or all of the hydrogen atoms of the hydrocarbon group may be substituted with substituents. In formula (L1-4), R ２ This is a hydrocarbon group. Some or all of the hydrogen atoms in the hydrocarbon group may be substituted with substituents. In formula (L1-7), R ３ This is a hydrocarbon group. Some or all of the hydrogen atoms in the hydrocarbon group may be substituted with substituents. In formula (L1-8), R ４ This is a hydrocarbon group. Some or all of the hydrogen atoms in the hydrocarbon group may be substituted with substituents. In formula (L1-9), Rx is a hydrocarbon group. Some or all of the hydrogen atoms of the hydrocarbon group may be substituted with substituents. In formula (L1-10), R ５ This is a single bond or a hydrocarbon group. Some or all of the hydrogen atoms of the hydrocarbon group may be substituted with substituents. In formula (L1-11), R ６ This is a hydrocarbon group. Some or all of the hydrogen atoms in the hydrocarbon group may be substituted with substituents.
4. Said L １ The resist composition according to claim 3, wherein is a divalent linking group represented by any of the above formulas (L1-1) to (L1-6).
5. Said T １ The resist composition according to claim 1 or 2, wherein the aromatic hydrocarbon group containing the thiophene ring has at least one iodine atom.
6. A method for forming a resist pattern, comprising the steps of: forming a resist film on a support using the resist composition described in claim 1; exposing the resist film; and developing the exposed resist film to form a resist pattern.
7. A compound represented by the following general formula (d0). 【Transformation 3】 [In the formula, T １ This is an aromatic hydrocarbon group containing a thiophene ring. Some or all of the hydrogen atoms of the aromatic hydrocarbon group containing the thiophene ring may be substituted with substituents. １ Ar is a single bond or a divalent linking group. １ is an aromatic hydrocarbon group having at least one halogen atom. The aromatic hydrocarbon group may have substituents other than halogen atoms. q is an integer of 1 or more, and if q is 2 or more, multiple T １ and L １ They may be the same or different. m is an integer greater than or equal to 1, ｍ＋ [This is an m-valent organic cation.]
8. An acid diffusion control agent containing the compound described in claim 7.