Semiconductor device and method for manufacturing a semiconductor device

Abstract

High-performance semiconductor devices and methods for manufacturing semiconductor devices are provided. [Solution] The semiconductor device comprises an active layer and a barrier layer adjacent to the active layer, wherein the active layer contains indium and antimony, and the barrier layer contains aluminum, indium and antimony, and the direction in which the barrier layer is stacked on the active layer is defined as the depth direction, and in the atomic concentration distribution in the depth direction from the active layer to the barrier layer, the rising position of the hydrogen concentration is closer to the active layer than the rising position of the aluminum concentration.

Description

[Technical Field]

[0001] This disclosure relates to semiconductor devices and methods for manufacturing semiconductor devices. [Background technology]

[0002] Compound semiconductors containing InSb are materials with high mobility and a small bandgap. Taking advantage of these characteristics, compound semiconductors containing InSb are used in devices such as magnetic sensors, high-speed devices, and IR (infrared) sensors. In realizing devices using compound semiconductors containing InSb, it is preferable to use AlInSb as the electron barrier layer.

[0003] For example, Patent Document 1 discloses a compound semiconductor substrate containing an AlInSb layer with good crystallinity and excellent surface flatness, which is manufactured using metal-organic chemical vapor deposition (MOCVD). [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2018-104278 [Overview of the project] [Problems that the invention aims to solve]

[0005] Here, semiconductor devices are used, for example, as IR light-emitting devices or IR light-receiving devices, and there is a need to further improve the light emission intensity or detection sensitivity. In other words, in practical applications, semiconductor devices are required to have an even higher SNR (Signal to Noise Ratio).

[0006] This disclosure is made in view of these circumstances and aims to provide high-performance semiconductor devices and methods for manufacturing semiconductor devices.

Means for Solving the Problem

[0007] (1) A semiconductor device according to an embodiment of the present disclosure includes an active layer, a barrier layer adjacent to the active layer, and the active layer contains indium and antimony, the barrier layer contains aluminum, indium, and antimony, Taking the direction in which the barrier layer is laminated on the active layer as the depth direction, in the distribution of the atomic concentration in the depth direction from the active layer to the barrier layer, the rising position of the hydrogen concentration is closer to the active layer side than the rising position of the aluminum concentration.

[0008] (2) As an embodiment of the present disclosure, in (1), in the distribution of the atomic concentration in the depth direction from the active layer to the barrier layer, after the hydrogen concentration peaks, it becomes 50% or less of the peak concentration.

[0009] (3) As an embodiment of the present disclosure, in (1) or (2), in the distribution of the atomic concentration in the depth direction from the active layer to the barrier layer, the position of the peak of the hydrogen concentration is within a range of 30 nm or less from the interface between the barrier layer and the active layer toward the active layer side.

[0010] (4) As an embodiment of the present disclosure, in any one of (1) to (3), in the distribution of the atomic concentration in the depth direction from the active layer to the barrier layer, the full width at half maximum of the peak of the hydrogen concentration is 60 nm or less.

[0011] (5) As an embodiment of the present disclosure, in any one of (1) to (4), in the distribution of the atomic concentration in the depth direction in the barrier layer, the hydrogen concentration at one end where the barrier layer is adjacent to the active layer is lower than the hydrogen concentration at the other end.

[0012] (6) As one embodiment of the present disclosure, in (5), The barrier layer is doped, and in the distribution of atomic concentrations in the depth direction within the barrier layer, the hydrogen concentration decreases monotonically from one end to the other.

[0013] (7) In one embodiment of the present disclosure, in any of (1) to (5), The aforementioned barrier layer is doped.

[0014] (8) In one embodiment of the present disclosure, in any of (1) to (7), The active layer and the barrier layer have different lattice constants in an unstrained state.

[0015] (9) In one embodiment of the present disclosure, in any of (1) to (8), The active layer further contains aluminum.

[0016] (10) A method for manufacturing a semiconductor device according to one embodiment of the present disclosure is: A method for manufacturing a semiconductor device, which manufactures any of the semiconductor devices described in (1) to (9), The process includes a pressure-increasing annealing step in which the pressure in the apparatus reaction chamber is increased before the barrier layer is formed. [Effects of the Invention]

[0017] This disclosure provides high-performance semiconductor devices and methods for manufacturing semiconductor devices. [Brief explanation of the drawing]

[0018] [Figure 1] Figure 1 shows an example of the distribution of aluminum and hydrogen concentrations in a semiconductor device according to one embodiment of the present disclosure. [Figure 2] Figure 2 shows the defect-dependent resistance when the semiconductor device is an infrared device. [Figure 3]Figure 3 shows a band diagram when the semiconductor device is an infrared device. [Figure 4] Figure 4 shows the dependence of mobility on the amount of defects when the semiconductor device is a Hall element. [Figure 5] Figure 5 shows a band diagram when the semiconductor device is a Hall element. [Figure 6] Figure 6 illustrates the structure of a semiconductor device and shows the schematic distribution of aluminum and hydrogen concentrations. [Figure 7] Figure 7 illustrates dangling bonds and hydrogen termination. [Figure 8] Figure 8 shows a band diagram when the semiconductor device is a Hall element. [Modes for carrying out the invention]

[0019] <Semiconductor devices> The semiconductor device according to this embodiment comprises an active layer and a barrier layer adjacent to the active layer. The left diagram of Figure 6 illustrates the structure of the semiconductor device. The semiconductor device may include a substrate. The semiconductor device may also include a first layer provided between the substrate and the active layer, and a second layer adjacent to the barrier layer on the opposite side from the active layer. At least one of the first layer and the second layer may be omitted as appropriate depending on the type of semiconductor device. The semiconductor device is constructed by stacking these layers, including at least an active layer and a barrier layer. Hereinafter, the direction in which the barrier layer is stacked on the active layer will be referred to as the depth direction, and the positions of the components will be described accordingly.

[0020] Here, the semiconductor device may be an infrared device (IR device). An infrared device is an infrared light-emitting element or an infrared light-receiving element, and this is a collective term for both. An infrared light-emitting element is realized with the structure of the semiconductor device described below, and an infrared light-receiving element is realized with the same structure. When the semiconductor device is an infrared light-emitting element, it may specifically be a light-emitting diode (LED). When the semiconductor device is an infrared light-receiving element, it may specifically be a photodiode (PD). Furthermore, the semiconductor device may be a Hall element. The case where the semiconductor device is a Hall element will be explained in one of the embodiments described later. In the description of the other embodiments, the semiconductor device will be described as an infrared device.

[0021] <Active layer> The active layer is composed of indium (In) and antimony (Sb). The active layer may further contain aluminum (Al). Therefore, InSb or InAlSb can be used as the material for the active layer, but are not limited to these. The active layer may also contain atoms such as Ga and As, and may be composed of an alloy containing these atoms. Furthermore, from the viewpoint of device characteristics, the active layer is preferably a single crystal.

[0022] <Barrier layer> The barrier layer is composed of aluminum (Al), indium (In), and antimony (Sb). Therefore, while InAlSb and the like are used as the barrier layer material, it is not limited to these. The barrier layer may also contain atoms such as Ga and As, and may be composed of alloys containing these atoms. Furthermore, from the viewpoint of device characteristics, the barrier layer is preferably a single crystal.

[0023] <Circuit board> The substrate is not particularly limited as long as it supports layers including the active layer and the barrier layer. Examples include GaAs substrates, InP substrates, GaN substrates, Si substrates, quartz substrates, aluminum substrates, oxide substrates, aluminum nitride substrates, and polyimide flexible substrates.

[0024] <First layer> The first layer may be, for example, a semiconductor layer of a first conductivity type. The first conductivity type may be, for example, n-type. The constituent material of the first layer can be, but is not limited to, InSb, GaAs, InAs, InGaAs, InAlSb, GaAsSb, or InGaP.

[0025] <Second Layer> The second layer may be, for example, a semiconductor layer of a second conductivity type. The second conductivity type is different from the first conductivity type, and may be, for example, p-type. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type. The constituent material of the second layer may be, but is not limited to, InSb, GaAs, InAs, InGaAs, InAlSb, GaAsSb, or InGaP.

[0026] <Hydrogen concentration distribution> As mentioned above, semiconductor devices are required to have even higher signal-to-noise ratios (SNR). The inventors diligently investigated ways to provide high-performance semiconductor devices and discovered that performance can be improved by properly terminating dangling bonds.

[0027] Figure 7 illustrates dangling bonds and hydrogen termination. The central figure in Figure 7 is a semiconductor device, the same as in Figure 6. The active layer and the barrier layer have different lattice constants in the unstrained state (left figure in Figure 7). Therefore, dangling bonds are likely to occur at the boundary between the active layer and the barrier layer due to the difference in lattice constants (the number of defects tends to increase). Here, hydrogen can terminate dangling bonds (right figure in Figure 7). In other words, hydrogen can reduce unbonded bonds and thus reduce defect levels. The barrier layer may contain hydrogen (H), and the distribution of hydrogen concentration can be adjusted by adjusting the process of the semiconductor device manufacturing method. In the semiconductor device according to this embodiment, hydrogen terminates defects near the interface between the barrier layer and the active layer, reducing defect levels and thus achieving a high SNR.

[0028] Figure 1 shows an example of the aluminum and hydrogen concentration distributions of a semiconductor device according to this embodiment. The measurements were performed using SIMS (Secondary Ionization Mass Spectrometer). Specifically, a sector-type SIMS instrument, the "IMS-7f" manufactured by CAMECA Corporation, was used. The ion species of the primary ion beam was Cs + The acceleration voltage of the primary ion beam was 15kV. The polarity of the secondary ion detection was negative. The horizontal axis in Figure 1 represents "depth," which is the distance from the surface of the semiconductor device in the depth direction, with the surface of the semiconductor device (the surface furthest from the substrate in the layer furthest from the substrate) being set to zero, as shown in Figure 6. The vertical axis represents the normalized concentration. The aluminum concentration was normalized by dividing by the peak (maximum value) of the aluminum concentration. Similarly, the hydrogen concentration was normalized by dividing by the peak (maximum value) of the hydrogen concentration. As shown in Figure 1, the peak of the hydrogen concentration is shifted from the peak of the aluminum concentration, indicating a shift towards the active layer. The appropriate distribution of atomic concentrations in the depth direction from the active layer to the barrier layer of the semiconductor device is explained below.

[0029] First, it is preferable for hydrogen atoms to be localized in order to efficiently terminate defect levels and because hydrogen atoms can deactivate dopants. In particular, when the semiconductor device is an infrared device, the barrier layer may be doped. When hydrogen atoms deactivate dopants in the barrier layer, parasitic resistance can increase. Therefore, by limiting the range of hydrogen atoms present in the barrier layer, it is possible to realize a high-performance device with low parasitic resistance and the ability to terminate interface defects. Specifically, it is important that hydrogen atoms are distributed in large numbers in the vicinity of the active layer and the barrier layer. Here, carriers tend to accumulate not only at the interface between the active layer and the barrier layer, but also in the vicinity of the active layer with the barrier layer (approximately several tens of nm) due to band (conduction band, valence band) bending. Therefore, it is preferable to have a configuration in which the hydrogen concentration is increased not only at the interface, but also in the vicinity of the active layer with the barrier layer.

[0030] Here, Figure 6 illustrates the structure of a semiconductor device and shows the schematic distribution of aluminum and hydrogen concentrations. The schematic distribution is an approximation of the detailed distribution shown in Figure 1 using a higher-order curve. Specifically, the approximation may be performed by fitting with a Gaussian function. The rise point is an inflection point in a part of the approximated higher-order curve that reaches the peak from the active layer toward the barrier layer (in the opposite direction of depth). In the semiconductor device according to this embodiment, in the atomic concentration distribution in the depth direction from the active layer to the barrier layer, the rise point of the hydrogen concentration is closer to the active layer than the rise point of the aluminum concentration. By having such a distribution of hydrogen and aluminum in the semiconductor device, hydrogen atoms terminate defects and reduce defect levels, thereby achieving a high SNR.

[0031] Furthermore, from the viewpoint of localizing hydrogen atoms, in the distribution of atomic concentrations in the depth direction from the active layer to the barrier layer, it is preferable that the hydrogen concentration reaches a peak and then falls to 70% or less of the peak concentration, and more preferably to 50% or less.

[0032] Furthermore, in the atomic concentration distribution in the depth direction from the active layer to the barrier layer, the position of the hydrogen concentration peak is preferably at the interface between the barrier layer and the active layer. However, the position of the hydrogen concentration peak may be within a range of 30 nm or less from the interface towards the active layer.

[0033] Furthermore, from the viewpoint of localizing hydrogen atoms, it is preferable that the full width at half maximum (FWHM) of the hydrogen concentration peak in the atomic concentration distribution in the depth direction from the active layer to the barrier layer is 60 nm or less. From the viewpoint of efficient defect termination by hydrogen, it is preferable that the FWHM of the hydrogen concentration peak is 1 nm or more.

[0034] Furthermore, from the viewpoint of localizing hydrogen atoms, it is preferable that the hydrogen concentration in the barrier layer be low. Therefore, in the distribution of atomic concentration in the depth direction of the barrier layer, it is preferable that the hydrogen concentration at one end of the barrier layer is lower than the hydrogen concentration at the other end adjacent to the active layer. Moreover, it is even more preferable that the barrier layer is doped and that the hydrogen concentration in the distribution of atomic concentration in the depth direction of the barrier layer decreases monotonically from one end to the other. Here, monotonically decreasing means that the detailed distribution decreases monotonically when approximated by a higher-order curve.

[0035] Here, when the barrier layer is used as an electron barrier layer, it is preferable that it be p-doped. Furthermore, when the barrier layer is used as a hole barrier layer, it is preferable that it be n-doped. However, when the barrier layer is doped, it is preferable that the hydrogen concentration in the barrier layer be low from the viewpoint of preventing dopant deactivation.

[0036] <Manufacturing methods for semiconductor devices> The inventors have found that a semiconductor device having the above hydrogen concentration distribution can be manufactured by performing a pressure-increasing annealing step, which involves increasing the pressure in the apparatus reaction chamber and annealing before depositing the barrier layer, based on the manufacturing method described in Patent Document 1. An example of the manufacturing process for the semiconductor device according to this embodiment is described below. Furthermore, the above semiconductor device can also be manufactured by increasing the hydrogen flow rate based on the manufacturing method described in Patent Document 1 in order to localize the hydrogen atoms.

[0037] The multilayer film was fabricated using MOCVD as described below. First, a zincblende-type semi-insulating GaAs substrate was prepared. Trimethylindium (TMIn) was supplied as the In raw material, trisdimethylaminoantimony (TDMASb) as the Sb raw material, and dimethyltellurium (DMTe) as the n dopant to the semi-insulating GaAs substrate at a substrate temperature of 500°C, and an n-InSb layer was formed. At this time, the V / III ratio, which is the ratio of the amount of Group V elements supplied to the amount of Group III elements supplied, was 5.0. The thickness of the n-InSb layer was 1000 nm. The dope concentration was 1.0 × 10⁻⁶. 19 / cm3 was.

[0038] Subsequently, at a substrate temperature of 500 °C, trimethylindium (TMIn) as an In raw material, tris(dimethylamino)antimony (TDMASb) as an Sb raw material, and dimethylzinc (DMZn) as a p-dopant were supplied, and a p-InSb layer was formed. At this time, the V / III ratio was 5.0. The p-InSb layer corresponds to the active layer. The film thickness of the p-InSb layer was 2000 nm. Also, the doping concentration was 6.0×10 16 / cm 3 was.

[0039] Here, the supply of each source flow was stopped, and only hydrogen was flowed into the apparatus reaction chamber, and the pressure in the apparatus reaction chamber was increased from 50 torr to 300 torr. In this state, annealing was performed for 10 minutes. Then, the pressure in the apparatus reaction chamber was decreased from 300 torr to 50 torr.

[0040] Subsequently, at a substrate temperature of 500 °C, tri-tert-butylaluminum (TTBAl) as an Al raw material, trimethylindium (TMIn) as an In raw material, and tris(dimethylamino)antimony (TDMASb) as an Sb raw material were supplied. Then, dimethylzinc (DMZn) was supplied as a p-dopant, and a p-AlInSb layer was formed. The p-AlInSb layer corresponds to the barrier layer. At this time, the Al raw material, In raw material, and Sb raw material were supplied together so that the raw material ratio of Al to In, Al / (Al + In), became 0.50. Then, Al 0.7 In 0.3 Sb was formed by increasing Al / (Al + In) to 0.70 (that is, increasing the supply amount of the Al raw material). At this time, the V / III ratio was 5.0. The film thickness of the p-AlInSb layer was 40 nm. Also, the doping concentration was 2.0×10 18 / cm 3 was.

[0041] Next, at a substrate temperature of 500°C, trimethylindium (TMIn) was supplied as the In raw material, trisdimethylaminoantimony (TDMASb) as the Sb raw material, and dimethylzinc (DMZn) as the p dopant, and a p-InSb layer was formed. At this time, the V / III ratio was 5.0. The thickness of the p-InSb layer was 250 nm. The dope concentration was 2.0 × 10⁻⁶. 18 / cm 3 That was the case.

[0042] <Raw materials> In the above manufacturing method, the In raw material, Sb raw material, and Al raw material are not particularly limited as long as they can form an InSb layer and an AlInSb layer. Examples of In raw materials include trimethylindium (TMIn) and triethylindium (TEIn). Examples of Sb raw materials include trimethylantimony (TMSb), triethylantimony (TESb), trisdimethylaminoantimony (TDMASb), and triisopropylantimony (TIPSb). Examples of Al raw materials include trimethylaminealane (TMAAl), triisobutylaluminum (TIBAl), and dimethylaluminum hydride (DMAH). Dimethylethylaminealane (DMEAAl) and tritertically butylaluminum (TTBAl) are also examples of Al raw materials.

[0043] From the viewpoint of raw material decomposition temperature, the In raw material is preferably trimethylindium (TMIn), triethylindium (TEIn), or a combination thereof. From the viewpoint of long-term stability of the raw materials, the Al raw material is preferably triterminately butylaluminum (TTBAl). From the viewpoint of suppressing carbon impurities, the Sb raw material is preferably trisdimethylaminoantimony (TDMASb).

[0044] Furthermore, in order to control the conductivity type, dopants may be supplied in addition to the above raw materials. Examples of dopants include dimethyl zinc (DMZn), diethyl zinc (DEZn), dimethyl tellurium (DMTe), diethyl tellurium (DETe), tetramethyltin (TMSn), and tetraethyltin (TESn).

[0045] <Example 1> The resistance of the two multilayer film structures (a) and (b) below was calculated for use as an IR sensor (IR light receiving device). Here, the resistance of the IR sensor (with no bias voltage applied) is an important indicator for determining thermal noise, and a large value is preferable. The manufacturing method of the multilayer film follows the process described above.

[0046] The multilayer film structures (a) and (b) have an n-InSb layer (corresponding to the first layer in Figure 6), on which an active layer and a barrier layer are stacked, and on which a p-InSb layer (corresponding to the second layer in Figure 6) is stacked.

[0047] In the multilayer structure (a), the n-InSb layer thickness is 1000 nm and the doping concentration is 1.0 × 10⁻¹⁰ 19 / cm 3 The active layer, the p-InSb layer, has a thickness of 2000 nm and a dope concentration of 6.0 × 10⁻¹⁶. 16 / cm 3 The barrier layer is p-Al. 0.18 In 0.82 The Sb layer thickness is 20 nm, and the dope concentration is 2.0 × 10⁻⁶. 18 / cm 3 The p-InSb layer thickness is 500 nm, and the dope concentration is 2.0 × 10⁻⁶. 18 / cm 3 That is the case.

[0048] In the multilayer structure (b), the n-InSb layer thickness is 1000 nm and the doping concentration is 1.0 × 10⁻¹⁰ 19 / cm 3 This is the active layer, which is undoped i-Al. 0.09 In 0.91 The thickness of the Sb layer is 2000 nm. The barrier layer is p-Al 0.27 In0.73 The Sb layer thickness is 20 nm, and the dope concentration is 2.0 × 10⁻⁶. 18 / cm 3 The p-InSb layer thickness is 500 nm, and the dope concentration is 2.0 × 10⁻⁶. 18 / cm 3 Therefore, the height of the energy barrier of the barrier layer relative to the active layer, which affects the resistance described later, is the same for both the multilayer film structure (a) and the multilayer film structure (b).

[0049] Figure 2 shows the defect-to-resistance dependence of the multilayer film structure (a) and (b). The resistance was calculated by varying the defect amount in the region near the barrier layer (30 nm) of the active layer. The resistance referred to here is the resistance to the current flowing longitudinally through the multilayer film structure. The resistance on the vertical axis of Figure 2 is normalized to 1 for the case where the defect amount is 0.01 for each of the multilayer film structures (a) and (b). As shown in Figure 2, the resistance value improves by reducing the defect amount near the barrier layer of the active layer. This effect is more pronounced in the multilayer film structure (b), i.e., when the active layer contains Al.

[0050] Figure 3 is a band diagram of the multilayer structure (a), showing a magnified view of the vicinity of the active layer and the barrier layer. The vertical axis in Figure 3 represents the energy of Ec (bottom of the conduction band) and Ev (top of the valence band). The horizontal axis in Figure 3 represents the position in the depth direction. In IR devices, the recombination current in the active layer is an important factor in determining the resistance. Within the active layer, the valence band is bent at approximately 30 nm (arrow portion) near the barrier layer. From this, it is presumed that holes tend to accumulate in this region, and that the resistance is likely to decrease due to the recombination current.

[0051] <Example 2> The electron mobility in the transverse direction (direction perpendicular to the depth direction) was calculated for the multilayer film structure shown below. Here, mobility is an important indicator for determining the SNR of the Hall element, and a high value is preferable. The manufacturing method of the multilayer film follows the process described above.

[0052] The layered film structure in this embodiment is i-Al 0.1In 0.9 The structure consists of an active layer and a barrier layer stacked on top of an Sb layer (corresponding to the first layer in Figure 6). 0.1 In 0.9 The Sb layer has a thickness of 100 nm and a mobility of 3000 cm. 2 The value is / Vs. The thickness of the active layer, i-InSb, is 100 nm, and the mobility is 52,000 cm². 2 / Vs. The barrier layer is i-Al 0.1 In 0.9 The Sb layer has a thickness of 100 nm and a mobility of 3000 cm. 2 / Vs is the case.

[0053] Figure 4 shows the defect amount dependence of mobility for a multilayer film structure. Here, mobility refers to the mobility of the current flowing laterally through the multilayer structure. Mobility was calculated by varying the defect amount in the region of the active layer near the barrier layer (30 nm, as in Figure 3). As shown in Figure 4, reducing the defect amount near the barrier layer in the active layer improves the mobility of the multilayer film.

[0054] Figure 8 is a band diagram of the multilayer structure of this embodiment, showing a magnified view of the vicinity of the active layer and the barrier layer. The vertical axis in Figure 8 represents the energy Ec (bottom of the conduction band). The conduction band diagram is important for electron mobility. The coordinates on the horizontal axis in Figure 8 represent the position in the depth direction. In the active layer, the valence band is bent near the barrier layer, suggesting that electrons tend to accumulate easily and that this region is susceptible to defects, leading to a decrease in mobility. Figure 5 is a band diagram of the i-InSb layer of the active layer in Example 2, with a thickness of 300 nm. In the active layer, the valence band is bent at approximately 60 nm (arrow portion) near the barrier layer. From this, it is presumed that electrons tend to accumulate easily in this region, leading to a decrease in mobility.

[0055] While embodiments have been described above based on the drawings and examples, it should be noted that those skilled in the art will find it easy to make various modifications and alterations based on this disclosure. Therefore, it should be noted that these modifications and alterations are within the scope of this disclosure.

Claims

1. The active layer, The active layer and the adjacent barrier layer are provided, The active layer contains indium and antimony. The barrier layer comprises aluminum, indium, and antimony. A semiconductor device in which, with the direction in which the barrier layer is stacked on the active layer as the depth direction, the rising position of the hydrogen concentration in the atomic concentration distribution in the depth direction from the active layer to the barrier layer is closer to the active layer than the rising position of the aluminum concentration.

2. The semiconductor device according to claim 1, wherein, in the distribution of atomic concentrations in the depth direction from the active layer to the barrier layer, the hydrogen concentration reaches a peak and then becomes 50% or less of the peak concentration.

3. The semiconductor device according to claim 2, wherein, in the distribution of atomic concentrations in the depth direction from the active layer to the barrier layer, the position of the hydrogen concentration peak is within a range of 30 nm or less from the interface between the barrier layer and the active layer toward the active layer.

4. The semiconductor device according to claim 1, wherein in the atomic concentration distribution in the depth direction from the active layer to the barrier layer, the full width at half maximum of the hydrogen concentration peak is 60 nm or less.

5. The semiconductor device according to claim 1, wherein, in the distribution of atomic concentrations in the depth direction of the barrier layer, the hydrogen concentration at one end of the barrier layer is lower than the hydrogen concentration at the other end adjacent to the active layer.

6. The semiconductor device according to claim 5, wherein the barrier layer is doped, and in the distribution of atomic concentrations in the depth direction of the barrier layer, the hydrogen concentration decreases monotonically from one end to the other.

7. The semiconductor device according to claim 2 or 5, wherein the barrier layer is doped.

8. The semiconductor device according to claim 2 or 5, wherein the active layer and the barrier layer have different lattice constants in an unstrained state.

9. The semiconductor device according to claim 1, wherein the active layer further comprises aluminum.

10. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, A method for manufacturing a semiconductor device, comprising a pressure-increasing annealing step of increasing the pressure in the apparatus reaction chamber and annealing before forming the barrier layer.

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