Solid-state image sensor

JP2026106540APending Publication Date: 2026-06-30SAMSUNG ELECTRONICS CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2024-12-18
Publication Date
2026-06-30

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    Figure 2026106540000001_ABST
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Abstract

By reducing the size of the circuitry arranged in the pixel area, high-resolution imaging is achieved. [Solution] The solid-state image sensor has a plurality of SPAD pixels 211 and a counter unit 300. The counter unit 300 has a plurality of counter data generation circuits 212 corresponding to the plurality of SPAD pixels 211 and a memory unit 310. The memory unit 310 has a counter corresponding to each SPAD pixel 211, and the counter data generation circuit 212 performs an addition process that sequentially performs carry-over addition at predetermined digit intervals when counting the number of photons in the SPAD pixels 211, and a recording process that sequentially records the addition result at predetermined digit intervals in the counter.
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