Solid-state image sensor
JP2026106540APending Publication Date: 2026-06-30SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-30
Smart Images

Figure 2026106540000001_ABST
Abstract
By reducing the size of the circuitry arranged in the pixel area, high-resolution imaging is achieved. [Solution] The solid-state image sensor has a plurality of SPAD pixels 211 and a counter unit 300. The counter unit 300 has a plurality of counter data generation circuits 212 corresponding to the plurality of SPAD pixels 211 and a memory unit 310. The memory unit 310 has a counter corresponding to each SPAD pixel 211, and the counter data generation circuit 212 performs an addition process that sequentially performs carry-over addition at predetermined digit intervals when counting the number of photons in the SPAD pixels 211, and a recording process that sequentially records the addition result at predetermined digit intervals in the counter.
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