Substrate processing apparatus and substrate processing method

Abstract

This technology can reduce the possibility of contamination of the substrate. [Solution] The substrate processing apparatus comprises an upstream chamber (e.g., a local transport chamber 21), an upstream pressure adjustment unit (e.g., a second pressure adjustment unit 25), a dry processing chamber 31, a transport unit (e.g., a local transport unit 22), and a control unit. The dry processing chamber 31 is connected to the upstream chamber via a first gate (e.g., a transport processing gate GTP). The transport unit transports the substrate W between the upstream chamber and the dry processing chamber 31 through the first gate, which is in an open state. The control unit controls the upstream pressure adjustment unit to set the pressure in the upstream chamber to a first pressure value higher than the pressure in the dry processing chamber 31, opens the first gate, controls the transport unit to transport the substrate W, and, with the first gate closed, controls the upstream pressure adjustment unit to reduce the pressure in the upstream chamber to a second pressure value lower than the first pressure value.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Conventionally, substrate processing apparatuses for processing substrates have been proposed (for example, Patent Documents 1 to 3). In Patent Documents 1 to 3, the substrate processing apparatus includes a plurality of processing chambers for dry-processing a substrate in a vacuum state, and a transfer unit for transferring the substrate to the plurality of processing chambers. The transfer chamber provided with the transfer unit is connected to each processing chamber through each gate valve. The substrate processing apparatus is provided with a pressure adjustment unit for adjusting the pressure in the transfer chamber. In such a substrate processing apparatus, with the pressure in the transfer chamber being higher than the pressure in the processing chamber, each gate valve opens, and the transfer unit transfers the substrate into and out of each processing chamber through each gate valve.

Prior Art Documents

Patent Documents

[0003] ]

Patent Document 1

Patent Document 2

Patent Document

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in Patent Documents 1 to 3, when gas and impurities in a certain processing chamber slightly flow into the transfer chamber through the gate valve, there is a risk that the impurities will also flow into other processing chambers connected to the transfer chamber. Therefore, there is a risk that the substrate will be contaminated in other processing chambers.

[0005] Therefore, the purpose of this disclosure is to provide a technology that can reduce the possibility of substrate contamination. [Means for solving the problem]

[0006] The substrate processing apparatus comprises an upstream chamber, an upstream pressure adjustment unit that supplies gas to the upstream chamber and sucks the gas from the upstream chamber to adjust the pressure inside the upstream chamber, a dry processing chamber connected to the upstream chamber via a first gate and in which dry processing is performed on the substrate when the first gate is closed, a transport unit that transports the substrate between the upstream chamber and the dry processing chamber through the open first gate, and a control unit that controls the upstream pressure adjustment unit to set the pressure inside the upstream chamber to a first pressure value higher than the pressure inside the dry processing chamber, opens the first gate, controls the transport unit to transport the substrate, and then, with the first gate closed, controls the upstream pressure adjustment unit to reduce the pressure inside the upstream chamber to a second pressure value lower than the first pressure value.

[0007] The substrate processing method comprises a first step of opening a first gate between the upstream chamber and the dry processing chamber while the pressure in the upstream chamber is set to a first pressure value higher than the pressure in the dry processing chamber, and a transport unit transports the substrate between the upstream chamber and the dry processing chamber; and a second step of closing the first gate and reducing the pressure in the upstream chamber to a second pressure value lower than the first pressure value. [Effects of the Invention]

[0008] This can reduce the possibility of contamination of the circuit board. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a schematic plan view showing an example of the configuration of a substrate processing apparatus. [Figure 2] Figure 2 is a schematic diagram showing an example of the internal configuration of the control unit. [Figure 3] Figure 3 is a longitudinal cross-sectional view schematically showing an example of a specific configuration of a dry processing module. [Figure 4] Figure 4 is a graph showing an example of the time variation of pressure in the local conveying chamber and the dry processing chamber. [Figure 5] Figure 5 is a graph showing an example of the time evolution of pressure in the load lock chamber and pressure in the local conveyor chamber. [Figure 6] Figure 6 is a flowchart showing an example of the operation of the dry processing module. [Figure 7] Figure 7 is a flowchart showing an example of the operation of the dry processing module. [Figure 8] Figure 8 is a schematic diagram showing an example of how the dry processing module according to the first embodiment changes during operation. [Figure 9] Figure 9 is a schematic diagram showing an example of how the dry processing module according to the first embodiment changes during operation. [Figure 10] Figure 10 shows an example of the time variation of pressure in the load lock chamber, local conveying chamber, and dry processing chamber. [Figure 11] Figure 11 is a schematic diagram showing an example of the configuration of the transport system of the dry processing module according to the second embodiment. [Figure 12] Figure 12 is a schematic diagram showing an example of how the dry processing module according to the second embodiment changes during operation. [Figure 13] Figure 13 is a schematic diagram illustrating an example of changes in the operation of the dry processing module according to the second embodiment. [Figure 14] Figure 14 is a schematic diagram illustrating an example of changes in the operation of the dry processing module according to the second embodiment. [Figure 15] Figure 15 is a schematic diagram illustrating an example of how the dry processing module according to the second embodiment changes during operation. [Modes for carrying out the invention]

[0010] Hereinafter, embodiments will be described in detail while referring to the drawings. In the drawings, for the purpose of easy understanding, the dimensions and numbers of each part are exaggerated or simplified as necessary. Also, parts having the same configuration and function are denoted by the same reference numerals, and redundant descriptions are omitted in the following description.

[0011] Also, in the following description, the same reference numerals are given to the same components for illustration, and their names and functions are also considered the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0012] Also, in the following description, even when ordinal numbers such as "first" or "second" are used, these terms are used for convenience in order to facilitate understanding of the content of the embodiments, and are not limited to the order that may be generated by these ordinal numbers.

[0013] When expressions indicating relative or absolute positional relationships (such as "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc.) are used, unless otherwise specified, such expressions not only strictly represent the positional relationship, but also represent a state in which the relative angle or distance is displaced within a tolerance or a range where the same function can be obtained. When expressions indicating an equal state (such as "identical", "equal", "homogeneous", etc.) are used, unless otherwise specified, such expressions not only strictly represent a quantitatively equal state, but also represent a state in which there is a difference within a tolerance or a range where the same function can be obtained. When expressions indicating a shape (such as "quadrangular shape" or "cylindrical shape", etc.) are used, unless otherwise specified, such expressions not only geometrically and strictly represent the shape, but also represent a shape having, for example, concavities and convexities or chamfers within a range where the same effect can be obtained. When expressions such as "comprising", "having", "including", or "possessing" are used for one component, such expressions are not exclusive expressions excluding the existence of other components. When the expression "at least any one of A, B, and C" is used, such expression includes only A, only B, only C, any two of A, B, and C, and all of A, B, and C.

[0014] <First Embodiment> <Overall Configuration of Substrate Processing Apparatus> FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 100. The substrate processing apparatus 100 is a single wafer type processing apparatus that processes substrates W one by one.

[0015] The substrate W is, for example, a semiconductor wafer, a substrate for liquid crystal displays, an organic electroluminescence (EL) substrate, a flat panel display (FPD) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate. The substrate W has a thin, flat shape. In the following, the substrate W is assumed to be a semiconductor wafer. As an example, the substrate W is a silicon substrate. The substrate W has, for example, a disc shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less.

[0016] In the example shown in Figure 1, the substrate processing apparatus 100 includes an indexer block 110, a processing block 120, and a control unit 90. The processing block 120 is primarily responsible for processing the substrate W, while the indexer block 110 is primarily responsible for transporting the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0017] The indexer block 110 includes a load port 111 and an indexer transport section 112. A substrate carrier (hereinafter referred to as a carrier) C is placed on the load port 111. Multiple substrates W are housed in the carrier C, for example, arranged with spacing between them in the vertical direction. In the example shown in Figure 1, multiple load ports 111 are arranged in a row.

[0018] The indexer transport unit 112 is a transport robot capable of removing unprocessed substrates W from carriers C placed on each load port 111. The indexer transport unit 112 may also be called an indexer robot. The indexer transport unit 112 transports the unprocessed substrates W removed from carriers C to processing blocks 120. Processing blocks 120 can process the unprocessed substrates W. The indexer transport unit 112 can also receive processed substrates W from processing blocks 120 and transport the processed substrates W to carriers C on load ports 111.

[0019] The processing block 120 includes one or more processing modules 1 and a main transport unit 80. In the example shown in Figure 1, multiple processing modules 1 are provided. The main transport unit 80 is a transport robot that transports the substrate W between the indexer transport unit 112 and the multiple processing modules 1.

[0020] As illustrated in Figure 1, the processing block 120 may also include a transfer unit 123. The transfer unit 123 relays the substrate W between the indexer transport unit 112 and the main transport unit 80. For example, the transfer unit 123 includes a shelf on which multiple substrates W can be placed in a vertically aligned position. The indexer transport unit 112 places the unprocessed substrate W onto the transfer unit 123. The main transport unit 80 takes the unprocessed substrate W from the transfer unit 123 and transports the substrate W to the processing module 1. The processing module 1 processes the substrate W.

[0021] The multiple processing modules 1 may include a dry processing module 1A and a wet processing module 1B, as shown in Figure 1, or they may not include a wet processing module 1B. If a wet processing module 1B is provided, the main transport unit 80 may transport the substrate W from one of the dry processing module 1A and the wet processing module 1B to the other. The dry processing module 1A performs dry processing on the substrate W in a vacuum state, and the wet processing module 1B performs wet processing on the substrate W in an atmospheric pressure state. Then, for example, the main transport unit 80 transports the substrate W processed by both the dry processing module 1A and the wet processing module 1B to the transfer unit 123.

[0022] In the example shown in Figure 1, the main transport unit 80 is located within the main transport space TS. The main transport space TS extends along a predetermined direction of movement Dx. The direction of movement Dx is, for example, the direction along the horizontal. In the example shown in Figure 1, the direction of movement Dx is perpendicular to the arrangement direction of the load ports 111. Hereafter, the horizontal direction perpendicular to the direction of movement Dx will also be referred to as the width direction Dy (here the same as the arrangement direction). The size of the main transport space TS in the direction of movement Dx is larger than the size of the main transport space TS in the width direction Dy. In other words, the main transport space TS has a long, elongated shape in the direction of movement Dx when viewed from above. Note that "viewed from above" here means viewing the object along the vertical direction.

[0023] In the example shown in Figure 1, multiple processing modules 1 are provided on both sides of the main transport space TS in the width direction Dy. In the example shown in Figure 1, multiple (two in the figure) processing modules 1 are arranged in the movement direction Dx on each side. At the location where each processing module 1 is provided, the multiple processing modules 1 may be stacked vertically. The portion containing the multiple processing modules 1 stacked vertically is also called the tower TW.

[0024] Each processing module 1 includes a module transport gate GMT. The module transport gate GMT is located at the boundary between the processing module 1 and the main transport space TS. The module transport gate GMT is an openable / closable loading / unloading entrance, and its opening and closing are controlled by the control unit 90. The module transport gate GMT may be a gate valve or a shutter. This also applies to the other gates described later. The main transport unit 80 stops at a transfer position facing the module transport gate GMT. The main transport unit 80 then loads and unloads the substrate W to and from the processing module 1 through the open module transport gate GMT. When the module transport gate GMT is closed, the internal space of the processing module 1 is isolated from the main transport space TS.

[0025] The main transport unit 80 transports, for example, an unprocessed substrate W from the transfer unit 123 to the dry processing module 1A. The dry processing module 1A performs dry processing on the substrate W. Dry processing is a process that etches, for example, objects to be etched on the main surface of the substrate W. This dry processing may leave impurities on the main surface of the substrate W. The main transport unit 80 transports the dry-processed substrate W from the dry processing module 1A to the wet processing module 1B. The wet processing module 1B then performs wet processing on the dry-processed substrate W. Wet processing is a cleaning process that removes, for example, impurities from the main surface of the substrate W. This wet processing can remove at least some of the impurities from the substrate W. The main transport unit 80 transports the wet-processed substrate W from the wet processing module 1B to the transfer unit 123.

[0026] The control unit 90 comprehensively controls the substrate processing apparatus 100. Figure 2 is a schematic diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. The data processing unit 91 and the storage unit 92 may be interconnected via a bus 93. The data processing unit 91 may be an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit 92 may include a non-temporary storage unit (e.g., ROM (Read Only Memory)) 921 and a temporary storage unit (e.g., RAM (Random Access Memory)) 922. The non-temporary storage unit 921 may store, for example, a program that defines the processing to be executed by the control unit 90. By executing this program, the data processing unit 91 enables the control unit 90 to execute the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be performed by hardware such as dedicated logic circuits. In the example in Figure 2, the control unit 90 is also connected to a non-temporary storage unit 94 (e.g., memory such as flash memory or a hard disk).

[0027] <Dry Processing Module> Next, an example of the configuration of the dry processing module 1A, which is the essence of this embodiment, will be described. Figure 3 is a schematic longitudinal cross-sectional view showing an example of a specific configuration of the dry processing module 1A. In the example of Figure 3, two dry processing modules 1A are stacked vertically, but this point will be explained later. Below, we will first give an overview of the configuration and operation example of the dry processing module 1A, and then describe it in detail.

[0028] As shown in Figure 3, the dry processing module 1A includes a local transport chamber 21 (corresponding to an example of an upstream chamber), a second pressure adjustment unit 25 (corresponding to an example of an upstream pressure adjustment unit), a local transport unit 22 (corresponding to an example of a transport unit), and a dry processing chamber 31.

[0029] The local transport chamber 21 is connected to the dry processing chamber 31 via a transport processing gate GTP (corresponding to an example of a first gate). In the example shown in Figure 3, the dry processing module 1A also includes a load lock chamber 11, and the local transport chamber 21 is connected to the load lock chamber 11 via a load transport gate GLT (corresponding to an example of a second gate). This point will be described in detail later.

[0030] The dry processing chamber 31 forms a dry processing space for performing dry processing on the substrate W. The substrate W undergoes dry processing inside the dry processing chamber 31 with the transport processing gate GTP closed. In the example shown in Figure 3, a processing gas supply unit 38 is provided to supply processing gas to the dry processing chamber 31. The processing gas supplied into the dry processing chamber 31 acts on the main surface of the substrate W, performing dry processing on the substrate W according to the type of processing gas. In the example shown in Figure 3, a third pressure adjustment unit 35 (corresponding to an example of a dry pressure adjustment unit) is also provided. The third pressure adjustment unit 35 adjusts the pressure inside the dry processing chamber 31 by supplying gas to the dry processing chamber 31 or sucking gas from the dry processing chamber 31. For example, the third pressure adjustment unit 35 adjusts the pressure inside the dry processing chamber 31 to within the vacuum range. This allows the substrate W to be dry processed in a vacuum state inside the dry processing chamber 31.

[0031] The local transport unit 22 transports the substrate W between the local transport chamber 21 and the dry processing chamber 31 through the open transport processing gate GTP. The local transport unit 22 also transports the substrate W between the load lock chamber 11 and the local transport chamber 21. This will be described in detail later.

[0032] The second pressure adjustment unit 25 adjusts the pressure inside the local transport chamber 21 by supplying gas into or drawing gas from the local transport chamber 21. For example, the second pressure adjustment unit 25 adjusts the pressure inside the local transport chamber 21 to within the vacuum range. As a result, the local transport unit 22 can transport the substrate W between the local transport chamber 21 and the dry processing chamber 31 under vacuum conditions.

[0033] The control unit 90 controls the second pressure adjustment unit 25 and the local transport unit 22. Figure 4 is a graph showing an example of the time variation of the pressure in the local transport chamber 21 and the pressure in the dry processing chamber 31. In the example in Figure 4, graph GT shows the pressure in the local transport chamber 21, and graph GP shows the pressure in the dry processing chamber 31. Note that Figure 4 shows the respective pressures when the load transport gate GLT is closed.

[0034] As shown in Figure 4, when the transport processing gate GTP is open, the pressure in the local transport chamber 21 is higher than the pressure in the dry processing chamber 31. In other words, the control unit 90 controls the second pressure adjustment unit 25 to set the pressure in the local transport chamber 21 to a first transport pressure value TP1 (corresponding to an example of the first pressure value) which is higher than the pressure in the dry processing chamber 31, and then opens the transport processing gate GTP. The control unit 90 then controls the local transport unit 22 to transport the substrate W between the local transport chamber 21 and the dry processing chamber 31.

[0035] During this transport process, the pressure in the local transport chamber 21 is higher than the pressure in the dry processing chamber 31, so the gas in the local transport chamber 21 flows into the dry processing chamber 31 through the transport processing gate GTP. Therefore, the possibility of the gas in the dry processing chamber 31 flowing into the local transport chamber 21 through the transport processing gate GTP can be reduced.

[0036] Incidentally, the dry processing chamber 31 may contain impurities such as by-products generated as a result of the reaction between the processing gas and the substrate W. In this embodiment, as described above, the inflow of gas from the dry processing chamber 31 to the local transport chamber 21 is suppressed. Therefore, the possibility of impurities generated by the dry processing flowing from the dry processing chamber 31 into the local transport chamber 21 can be reduced.

[0037] On the other hand, as shown in Figure 4, when the transport processing gate GTP is closed, the control unit 90 controls the second pressure adjustment unit 25 to lower the pressure inside the local transport chamber 21 to a second transport pressure value TP2 (corresponding to the second pressure value), which is lower than the first transport pressure value TP1. As a result, even if impurities flow into the local transport chamber 21, these impurities can be more reliably discharged to the outside. Therefore, the internal space of the local transport chamber 21 can be made cleaner.

[0038] Next, a specific example of the configuration and operation of the dry processing module 1A will be described in more detail. In the example shown in Figures 1 and 3, the dry processing module 1A also includes a load lock chamber 11. The load lock chamber 11 faces the main transport space TS, and a dry transport gate GDT, which is an example of a module transport gate GMT, is provided in the portion facing the main transport space TS. The substrate W is transported between the load lock chamber 11 and the main transport unit 80 through the dry transport gate GDT. In other words, the load lock chamber 11 forms the interface space of the dry processing module 1A.

[0039] In the examples shown in Figures 1 and 3, the local transport unit 22 is located within the local transport chamber 21. In other words, the local transport chamber 21 forms a relay space for the substrate W between the load lock chamber 11 and the dry processing chamber 31. The dry processing chamber 31 forms a dry processing space as described above.

[0040] Hereinafter, the unit to which the load lock chamber 11 belongs will be referred to as the load lock unit 10, the unit to which the local transport chamber 21 belongs will be referred to as the local transport unit 20, and the unit to which the dry processing chamber 31 belongs will be referred to as the dry processing unit 30.

[0041] The load lock unit 10 switches between atmospheric pressure and vacuum states. In other words, the load lock unit 10 changes the state of the load lock chamber 11 between atmospheric pressure and vacuum. The main transport unit 80 transports the load lock unit 10 and the substrate W in the atmospheric pressure state. In other words, the main transport unit 80 transports the load lock chamber 11 and the substrate W in the atmospheric pressure state through the dry transport gate GDT.

[0042] The local transport unit 20 includes a local transport section 22. The local transport section 22 is located inside the local transport chamber 21. The local transport section 22 is controlled by the control unit 90 and transports the substrate W between the load lock unit 10 and the dry processing unit 30 under vacuum conditions.

[0043] The dry processing unit 30 performs dry processing on the substrate W under vacuum conditions.

[0044] In the examples in Figures 1 and 3, the local transport chamber 21 is adjacent to the load lock chamber 11 in the direction of movement Dx. Also in the examples in Figures 1 and 3, the dry processing chamber 31 is adjacent to the local transport chamber 21 in the direction of movement Dx. In other words, in the examples in Figures 1 and 3, the load lock chamber 11, the local transport chamber 21, and the dry processing chamber 31 are arranged in this order in the direction of movement Dx. That is, in the examples in Figures 1 and 3, in each of the dry processing modules 1A, there is a one-to-one relationship between the load lock unit 10 (e.g., load lock chamber 11), the local transport unit 20 (e.g., local transport chamber 21), and the dry processing unit 30 (e.g., dry processing chamber 31). In other words, each of the load lock unit 10 and the local transport unit 20 is a unit dedicated to a single dry processing unit 30.

[0045] In this dry processing module 1A, the main transport unit 80 loads the unprocessed substrate W into the load lock chamber 11 under atmospheric pressure. Next, the load lock unit 10 reduces the pressure inside the load lock chamber 11 to within the vacuum range. Then, the local transport unit 22 removes the substrate W from the load lock chamber 11 under vacuum and loads the substrate W into the dry processing chamber 31. The dry processing unit 30 performs dry processing on the substrate W inside the dry processing chamber 31. The local transport unit 22 removes the dry-processed substrate W from the dry processing chamber 31 and loads it into the load lock chamber 11. Then, the load lock unit 10 raises the pressure inside the load lock chamber 11 to within the atmospheric pressure range, and the main transport unit 80 removes the substrate W from the load lock chamber 11.

[0046] <Road Lock Unit> As shown in Figure 3, the load lock unit 10 includes a load lock chamber 11, a substrate placement section 12, and a first pressure adjustment section 15.

[0047] The substrate placement section 12 is provided within the load lock chamber 11 and supports or holds the substrate W in a horizontal position. Here, "horizontal position" refers to a position where the thickness direction of the substrate W is aligned with the vertical direction. In the example shown in Figure 3, the substrate placement section 12 includes a plurality (e.g., three or more) of support pins 13. Each support pin 13 has a rod-like shape extending vertically, and its tip contacts the lower surface of the substrate W. In this state, the plurality of support pins 13 support the substrate W in a horizontal position. The substrate placement section 12 may also be a plate-shaped stage that supports the substrate W, or a suction stage that holds the substrate W by suction. In the example shown in Figure 3, the substrate placement section 12 supports or holds a single substrate W.

[0048] As shown in Figure 3, the load lock unit 10 may include a pin lifting drive unit 14 for raising and lowering the support pin 13. The pin lifting drive unit 14 is controlled by a control unit 90. For example, the pin lifting drive unit 14 includes a drive source such as a motor or pump, and a power transmission unit that transmits the driving force of the drive source to the support pin 13. The power transmission unit includes, for example, a ball screw mechanism or an air cylinder. The substrate W may be transferred between the support pin 13 and the local transport unit 22 by raising and lowering the support pin 13.

[0049] The first pressure adjustment unit 15 adjusts the pressure inside the load lock chamber 11. For example, the first pressure adjustment unit 15 adjusts the pressure inside the load lock chamber 11 to a value within the atmospheric pressure range. This brings the load lock chamber 11 into an atmospheric pressure state. The atmospheric pressure range includes standard atmospheric pressure and, for example, may be 80% or more and 120% or less of standard atmospheric pressure. Alternatively, the first pressure adjustment unit 15 adjusts the pressure inside the load lock chamber 11 to a value within the vacuum range, which is lower than the atmospheric pressure range. This brings the load lock chamber 11 into a vacuum state. The vacuum range may be, for example, one-tenth or less of standard atmospheric pressure, or one-hundredth or less.

[0050] In the example shown in Figure 3, the first pressure adjustment unit 15 includes a first gas suction unit 16 and a first gas supply unit 17. The first gas supply unit 17 supplies gas into the load lock chamber 11. The gas is, for example, an inert gas. The inert gas includes, for example, at least one of a noble gas and nitrogen gas. The noble gas includes, for example, at least one of argon gas and neon gas. The first gas suction unit 16 draws gas from inside the load lock chamber 11.

[0051] In the example shown in Figure 3, the first gas supply unit 17 includes a first supply pipe 171 and a first supply valve 172. The downstream end of the first supply pipe 171 is connected to, for example, the bottom of the load lock chamber 11. The upstream end of the first supply pipe 171 is connected to an inert gas supply source. The inert gas supply source has a storage section (not shown) for storing inert gas. The first supply pipe 171 is provided with a first supply valve 172. The first supply valve 172 is controlled by a control unit 90 to switch the opening and closing of the first supply pipe 171.

[0052] In the example shown in Figure 3, the first gas suction unit 16 includes a first suction pipe 161, a first pressure regulating valve 162, and a suction unit VP. The upstream end of the first suction pipe 161 is connected to, for example, the bottom of the load lock chamber 11. The downstream end of the first suction pipe 161 is connected to the suction unit VP. The suction unit VP is, for example, a pump and is controlled by the control unit 90. The suction unit VP draws gas from the load lock chamber 11 through the first suction pipe 161. The first suction pipe 161 is provided with a first pressure regulating valve 162. The first pressure regulating valve 162 is controlled by the control unit 90. The first pressure regulating valve 162 adjusts the pressure in the load lock chamber 11 by adjusting its opening. The first pressure regulating valve 162 is, for example, an auto pressure controller. The first pressure regulating valve 162 may have a built-in pressure sensor, or a pressure sensor may be provided in the load lock chamber 11. The first pressure regulating valve 162 can adjust the pressure in the load lock chamber 11 with greater precision by adjusting its opening degree according to the value detected by the pressure sensor. The same applies to the other pressure regulating valves described later.

[0053] The dry transport gate GDT and load transport gate GLT of the load lock chamber 11 are openable and closable loading / unloading ports controlled by the control unit 90. The dry transport gate GDT opens and closes when the pressure inside the load lock chamber 11 is within the atmospheric pressure range. The main transport unit 80 loads and unloads substrates W into and out of the load lock chamber 11 through the dry transport gate GDT when the dry transport gate GDT is open. The load transport gate GLT opens and closes when the pressure inside the load lock chamber 11 and the pressure inside the local transport chamber 21 are within the vacuum range. The local transport unit 22 loads and unloads substrates W into and out of the load lock chamber 11 through the load transport gate GLT when the load transport gate GLT is open.

[0054] <Local transport unit> The local transport unit 20 includes a local transport chamber 21 and a local transport section 22, as well as a second pressure adjustment section 25.

[0055] The local transport unit 22 is a transport robot and is controlled by the control unit 90. In the example in Figure 3, the local transport unit 22 includes a hand 23 and a hand movement drive unit 24. The hand 23 has, for example, a plate shape. The hand 23 holds or supports the substrate W in a horizontal position. For example, the substrate W is placed on the hand 23. The hand movement drive unit 24 is controlled by the control unit 90 and moves the hand 23. For example, the hand movement drive unit 24 includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the hand 23. The power transmission unit includes, for example, at least one of an arm mechanism, a ball screw mechanism, a rotation mechanism, and a cam mechanism.

[0056] The second pressure adjustment unit 25 adjusts the pressure inside the local transport chamber 21. Specifically, the second pressure adjustment unit 25 adjusts the pressure inside the local transport chamber 21 to a value within the vacuum range. This creates a vacuum state in the local transport chamber 21. The second pressure adjustment unit 25 includes a second gas suction unit 26 and a second gas supply unit 27. The second gas supply unit 27 supplies gas (e.g., inert gas) into the local transport chamber 21. The second gas suction unit 26 draws gas from inside the local transport chamber 21. In the example in Figure 3, the second gas supply unit 27 includes a second supply pipe 271 (corresponding to an example of a supply pipe) and a second supply valve 272 (corresponding to an example of a supply valve), and the second gas suction unit 26 includes a second suction pipe 261 (corresponding to an example of a suction pipe), a second pressure adjustment valve 262 (corresponding to an example of a pressure adjustment valve), and a suction unit VP. Since these configurations are the same as those of the first pressure adjustment unit 15, a detailed explanation is omitted.

[0057] The transport processing gate GTP is an openable and closable discharge entrance and is controlled by the control unit 90. The transport processing gate GTP opens and closes when the pressure in the local transport chamber 21 and the pressure in the dry processing chamber 31 are within the vacuum range. When the transport processing gate GTP is open, the local transport unit 22 transports the substrate W into and out of the dry processing chamber 31 through the transport processing gate GTP.

[0058] <Dry Processing Unit> The dry processing unit 30 includes a dry processing chamber 31, a substrate placement section 32, a third pressure adjustment section 35, and a processing gas supply section 38.

[0059] The substrate placement section 32 is located within the dry processing chamber 31 and supports or holds the substrate W in a horizontal position. In the example shown in Figure 3, the substrate placement section 32 includes a stage 33 and a plurality of lifting pins 34. The stage 33 has a plate-like shape and is positioned so that its thickness direction is aligned with the vertical direction. The substrate W is placed on the stage 33 in a horizontal position.

[0060] The lifting pin 34 has a rod-like shape extending vertically, and at least a portion of the lifting pin 34 is positioned to penetrate the stage 33. The lifting pin 34 moves up and down between a first height position and a second height position by a pin lifting drive unit 341. The first height position is the position where the tip of the lifting pin 34 is above the upper surface of the stage 33, and the second height position is the position where the tip of the lifting pin 34 is below the upper surface of the stage 33. The pin lifting drive unit 341 is controlled by a control unit 90. For example, the pin lifting drive unit 341 includes a drive source such as a motor or pump, and a power transmission unit that transmits the driving force of the drive source to the lifting pin 34. The power transmission unit includes, for example, a ball screw mechanism or an air cylinder. The lifting and lowering of the lifting pin 34 allows for the transfer of the substrate W between the stage 33 and the local transport unit 22.

[0061] The third pressure adjustment unit 35 adjusts the pressure inside the dry processing chamber 31. Specifically, the third pressure adjustment unit 35 adjusts the pressure inside the dry processing chamber 31 to a value within the vacuum range. This creates a vacuum state in the dry processing chamber 31. The third pressure adjustment unit 35 includes a third gas suction unit 36 ​​and a third gas supply unit 37. The third gas supply unit 37 supplies gas (e.g., inert gas) into the dry processing chamber 31. The third gas suction unit 36 ​​draws gas from inside the dry processing chamber 31. In the example in Figure 3, the third gas supply unit 37 includes a third supply pipe 371 and a third supply valve 372, and the third gas suction unit 36 ​​includes a third suction pipe (corresponding to an example of a third gas pipe) 361, a third pressure adjustment valve 362, and a suction unit VP. Since these configurations are the same as those of the first pressure adjustment unit 15, a detailed explanation is omitted. In the example shown in Figure 3, the downstream end of the third supply pipe 371 is connected to the side of the dry processing chamber 31.

[0062] The processing gas supply unit 38 supplies processing gas into the dry processing chamber 31. The processing gas acts on the main surface (in this case, the top surface) of the substrate W placed on the substrate placement unit 32 (specifically, the stage 33). This allows for dry processing on the main surface of the substrate W according to the type of processing gas. As an example, the processing gas is an etching gas. The etching gas removes the material to be etched from the substrate W. As a specific example, the processing gas may include hydrogen fluoride gas and may also include water vapor. By acting on the oxide film (e.g., silicon oxide film) of the substrate W with hydrogen fluoride gas (and water vapor), the oxide film can be etched. This dry processing may leave residues of the processing gas components (e.g., fluorine), by-products, or residues of the material to be etched on the main surface of the substrate W.

[0063] In the example shown in Figure 3, the processing gas supply unit 38 includes a supply pipe 381, a supply valve 382, ​​and a flow rate control valve 383. The downstream end of the supply pipe 381 is connected to, for example, the side of the dry processing chamber 31. In the example shown in Figure 3, the supply pipe 381 and the third supply pipe 371 merge into a common pipe, the downstream end of which is connected to the side of the dry processing chamber 31. The upstream end of the supply pipe 381 is connected to a processing gas supply source. The processing gas supply source has a storage section (not shown) for storing the processing gas. The supply pipe 381 is provided with a supply valve 382 and a flow rate control valve 383. The supply valve 382 is controlled by the control unit 90 to switch the opening and closing of the supply pipe 381. The flow rate control valve 383 is controlled by the control unit 90 to adjust the flow rate of the processing gas flowing through the supply pipe 381. If the processing gas contains multiple types of gases, a supply pipe 381, a supply valve 382, ​​and a flow control valve 383 corresponding to each type may be provided.

[0064] The dry processing unit 30 may include a plasma reactor for plasmaizing the processing gas. The plasma reactor may be, for example, a capacitively coupled or inductively coupled plasma reactor. The dry processing unit 30 may perform plasma processing on the substrate W by acting various active species (e.g., ions or radicals) contained in the plasma on the main surface of the substrate W.

[0065] <Pressure control of the dry processing module> Next, an example of pressure control in the dry processing module 1A will be described. The pressure in the local transport chamber 21 and the pressure in the dry processing chamber 31 are as explained with reference to Figure 4.

[0066] Next, we will discuss the pressure in the load lock chamber 11 and the pressure in the local transport chamber 21. Figure 5 is a graph showing an example of the time variation of the pressure in the load lock chamber 11 and the pressure in the local transport chamber 21. In the example in Figure 5, graph GL shows the pressure in the load lock chamber 11, and graph GT shows the pressure in the local transport chamber 21. Note that Figure 5 shows the pressure when the transport processing gate GTP and the dry transport gate GDT are closed.

[0067] In the example shown in Figure 5, when the load transfer gate GLT is open, the pressure inside the load lock chamber 11 is higher than the pressure inside the local transfer chamber 21. In other words, the control unit 90 controls the first pressure adjustment unit 15 to set the pressure inside the load lock chamber 11 to a first load pressure value LP1 that is higher than the pressure inside the local transfer chamber 21, and then opens the load transfer gate GLT. The control unit 90 then controls the local transfer unit 22 to transfer the substrate W between the load lock unit 10 and the local transfer unit 20 through the load transfer gate GLT.

[0068] This reduces the possibility of gas from the local transport chamber 21 flowing into the load lock chamber 11. Therefore, even if a small amount of impurities from the dry processing chamber 31 remain in the local transport chamber 21, the possibility of these impurities flowing into the load lock chamber 11 can be reduced.

[0069] Furthermore, as illustrated in Figure 5, when the load transport gate GLT is closed, the control unit 90 may control the first pressure adjustment unit 15 to adjust the pressure inside the load lock chamber 11 to a second load pressure value LP2 that is lower than the first load pressure value LP1. This allows even if a small amount of impurities enter the load lock chamber 11, these impurities to be more reliably discharged to the outside through the first suction pipe 161. Therefore, the internal space of the load lock chamber 11 can be made cleaner.

[0070] Therefore, the possibility of impurities flowing from the load lock chamber 11 into the main transport space TS can be reduced, and the possibility of impurities flowing into other processing modules 1 can be reduced.

[0071] <Operation of Dry Processing Module 1A> Figures 6 and 7 are flowcharts illustrating an example of the operation of the dry processing module 1A. Figures 8 and 9 are schematic diagrams showing an example of changes in the operation of the dry processing module 1A according to the first embodiment. Figure 10 is a diagram showing an example of the time change in pressure in the load lock chamber 11, local transport chamber 21, and dry processing chamber 31.

[0072] Initially, the load lock chamber 11, local transport chamber 21, and dry processing chamber 31 are assumed to be sealed. In other words, the control unit 90 closes the dry transport gate GDT, load transport gate GLT, and transport processing gate GTP.

[0073] First, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure inside the load lock chamber 11 to a value within the atmospheric pressure range (hereinafter referred to as atmospheric pressure value LP0) (step S1). For example, the control unit 90 opens the first supply valve 172 and closes the first pressure adjustment valve 162. In the examples in Figures 8 and 9, the open valve is shown in black. The atmospheric pressure value LP0 may be a value approximately equal to standard atmospheric pressure.

[0074] In the example shown in Figure 10, the pressure inside the local transport chamber 21 is initially adjusted to the second transport pressure value TP2. The second transport pressure value TP2 is within the vacuum range and may be, for example, less than or equal to 1 / 1000th of standard atmospheric pressure, or less than or equal to 1 / 2000th of standard atmospheric pressure. As a specific example, the second transport pressure value TP2 may be 6 Pa or more and 90 Pa or less, or 6 Pa or more and 50 Pa or less. Here, for example, the control unit 90 may control the second pressure adjustment unit 25 as follows. That is, the control unit 90 may close the second supply valve 272, or open the second pressure adjustment valve 262 to a predetermined second opening degree (described later).

[0075] Furthermore, in the example shown in Figure 10, the pressure inside the dry processing chamber 31 is initially adjusted to a second dry pressure value PP2. The second dry pressure value PP2 is a value within the vacuum range, and may be, for example, less than or equal to 1 / 1000th of standard atmospheric pressure, or less than or equal to 1 / 2000th. As a specific example, the second dry pressure value PP2 may be 6 Pa or more and 90 Pa or less, or 6 Pa or more and 50 Pa or less. Here, for example, the control unit 90 may control the third pressure adjustment unit 35 as follows: That is, the control unit 90 may close the third supply valve 372 and the supply valve 382, ​​and open the third pressure adjustment valve 362 to a predetermined third opening degree (described later).

[0076] Next, the control unit 90 opens the dry transport gate GDT and controls the main transport unit 80 to load the substrate W into the load lock chamber 11 (step S2). As a result, the substrate W is supported by multiple support pins 13. In the examples in Figures 8 and 9, the open gate is shown in black. After loading, the control unit 90 closes the dry transport gate GDT.

[0077] Next, the control unit 90 may control the first pressure adjustment unit 15 to temporarily adjust the pressure inside the load lock chamber 11 to the second load pressure value LP2 (see also step S3, Figure 10). The second load pressure value LP2 is a value within the vacuum range, and may be, for example, 1 / 1000th or less of standard atmospheric pressure, or 1 / 2000th or less. As a specific example, the second load pressure value LP2 may be 6 Pa or more and 90 Pa or less, or 6 Pa or more and 50 Pa or less. This makes the internal space of the load lock chamber 11 cleaner.

[0078] In step S3, the control unit 90 may close the first supply valve 172, as shown in the upper and center of Figure 8. This reduces the consumption of inert gas. Alternatively, in step S3, the control unit 90 may maintain the first pressure regulating valve 162 at a predetermined first opening. This reduces power consumption because the opening of the first pressure regulating valve 162 is not dynamically adjusted. It also extends the lifespan of the first pressure regulating valve 162. The predetermined first opening may be greater than or equal to the opening of the first pressure regulating valve 162 in step S4 described later, or it may be greater than that opening. As a specific example, the predetermined first opening may be fully open. This allows the pressure in the load lock chamber 11 to be reduced to the second load pressure value LP2 more quickly.

[0079] Next, the control unit 90 controls the first pressure adjustment unit 15 to raise the pressure in the load lock chamber 11 to a first load pressure value LP1 (step S4, see also Figure 10). The first load pressure value LP1 is within the vacuum range and is higher than the pressure in the local transport chamber 21. Here, the pressure in the local transport chamber 21 is the second transport pressure value TP2, so the first load pressure value LP1 is higher than the second transport pressure value TP2. The difference between the first load pressure value LP1 and the second transport pressure value TP2 may be, for example, 10 Pa or more. The first load pressure value LP1 is, for example, 1000 Pa or less.

[0080] In step S4, as shown in the upper and right sides of Figure 8, the control unit 90 opens the first supply valve 172 to supply inert gas into the load lock chamber 11 while controlling the first pressure regulating valve 162. The first pressure regulating valve 162 dynamically adjusts its opening degree according to the pressure in the load lock chamber 11. This allows the first pressure regulating unit 15 to adjust the pressure in the load lock chamber 11 to the first load pressure value LP1 with greater precision. In the examples of Figures 8 and 9, the pressure regulating valve whose opening degree is dynamically adjusted according to the pressure is indicated with hatched lines.

[0081] Next, the dry processing module 1A transports the substrate W from the load lock unit 10 to the local transport unit 20 (step S5). Specifically, the control unit 90 first opens the load transport gate GLT. Then, the control unit 90 controls the pin lifting drive unit 14 and the local transport unit 22 to transport the substrate W from the load lock chamber 11 into the local transport chamber 21 through the load transport gate GLT. For example, the control unit 90 controls the pin lifting drive unit 14 to raise the multiple support pins 13, and then controls the local transport unit 22 to move the hand 23 directly below the substrate W. Next, the control unit 90 controls the pin lifting drive unit 14 to lower the multiple support pins 13. This allows the substrate W to be handed to the hand 23. Next, the control unit 90 controls the local transport unit 22 to move the hand 23 into the local transport chamber 21. As a result, the substrate W is transported into the local transport chamber 21, as shown on the lower left side of Figure 8. Then, the control unit 90 closes the load transport gate GLT.

[0082] During this transport, the pressure in the load lock chamber 11 is higher than the pressure in the local transport chamber 21. For example, the first pressure adjustment unit 15 continuously adjusts the pressure in the load lock chamber 11 to the first load pressure value LP1 for at least the entire duration that the load transport gate GLT is open. As a result, the gas in the load lock chamber 11 flows into the local transport chamber 21 through the load transport gate GLT. Conversely, this reduces the possibility of the gas in the local transport chamber 21 flowing into the load lock chamber 11 through the load transport gate GLT.

[0083] Next, the control unit 90 controls the second pressure adjustment unit 25 to raise the pressure in the local transport chamber 21 to the first transport pressure value TP1 (step S6, see also Figure 10). The first transport pressure value TP1 is within the vacuum range and is higher than the pressure in the dry processing chamber 31. Here, since the pressure in the dry processing chamber 31 is the second dry pressure value PP2, the first transport pressure value TP1 is higher than the second dry pressure value PP2. The difference between the first transport pressure value TP1 and the second dry pressure value PP2 may be, for example, 10 Pa or more. The first transport pressure value TP1 may be, for example, 1000 Pa or less.

[0084] In step S6, as shown in the lower and center of Figure 8, the control unit 90 opens the second supply valve 272 to supply inert gas into the local transport chamber 21 while controlling the second pressure regulating valve 262. The second pressure regulating valve 262 dynamically adjusts its opening degree according to the pressure in the local transport chamber 21. This allows the pressure in the local transport chamber 21 to be adjusted to the first transport pressure value TP1 with greater precision.

[0085] On the other hand, after closing the load transport gate GLT, the control unit 90 may control the first pressure adjustment unit 15 to reduce the pressure inside the load lock chamber 11 to the second load pressure value LP2 (see also step S7, Figure 10). This allows the internal space of the load lock chamber 11 to be made cleaner. As shown in the lower and center of Figure 8, the control unit 90 may close the first supply valve 172 in the same way as in step S3, and may maintain the opening of the first pressure adjustment valve 162 at a predetermined first opening (e.g., fully open). The second pressure adjustment unit 25 may set the pressure inside the load lock chamber 11 to the second load pressure value LP2 until step S15, which will be described later.

[0086] Following step S6, the dry processing module 1A transports the substrate W from the local transport unit 20 to the dry processing unit 30 (step S8: corresponding to an example of the first step). Specifically, the control unit 90 first opens the transport processing gate GTP. Then, the control unit 90 controls the local transport unit 22 and the pin lifting drive unit 341 to transfer the substrate W from the local transport unit 20 to the dry processing unit 30 through the transport processing gate GTP. For example, the control unit 90 controls the local transport unit 22 to move the hand 23 directly above the multiple lifting pins 34, and then controls the pin lifting drive unit 341 to raise the multiple lifting pins 34. This transfers the substrate W to the multiple lifting pins 34. Next, the control unit 90 controls the local transport unit 22 to move the hand 23 into the local transport chamber 21 and controls the pin lifting drive unit 341 to lower the multiple lifting pins 34. This transfers the substrate W to the stage 33. In other words, as shown in the lower and right side of Figure 8, the substrate W is transported into the dry processing chamber 31. Then, the control unit 90 closes the transport processing gate GTP.

[0087] During this transport process, the pressure in the local transport chamber 21 is higher than the pressure in the dry processing chamber 31. For example, the second pressure adjustment unit 25 continuously adjusts the pressure in the local transport chamber 21 to the first transport pressure value TP1 for at least the entire duration that the transport processing gate GTP is open. As a result, the gas in the local transport chamber 21 flows into the dry processing chamber 31 through the transport processing gate GTP. Conversely, this reduces the possibility of the gas in the dry processing chamber 31 flowing into the local transport chamber 21 through the transport processing gate GTP.

[0088] Next, the control unit 90 controls the third pressure adjustment unit 35 to adjust the pressure in the dry processing chamber 31 to a first dry pressure value PP1 (see also step S9, Figure 10). The first dry pressure value PP1 is higher than the second dry pressure value PP2 and is within the pressure range suitable for dry processing. The first dry pressure value PP1 is within the vacuum range and may be, for example, 1000 Pa or less. Here, as shown on the upper and left sides of Figure 9, the control unit 90 opens the third supply valve 372 to supply inert gas into the dry processing chamber 31 and controls the third pressure adjustment valve 362 to adjust the pressure in the dry processing chamber 31 to a first dry pressure value PP1. The third pressure adjustment valve 362 adjusts its opening degree according to the pressure in the dry processing chamber 31. This allows the third pressure adjustment valve 362 to adjust the pressure in the dry processing chamber 31 to the first dry pressure value PP1 with greater precision.

[0089] When the pressure inside the dry processing chamber 31 reaches the first dry pressure value PP1, the control unit 90 controls the processing gas supply unit 38 to supply processing gas into the dry processing chamber 31. Specifically, the control unit 90 opens the supply valve 382. When the supply valve 382 opens, the processing gas is supplied into the dry processing chamber 31 and acts on the main surface of the substrate W. As a result, a dry processing treatment according to the type of processing gas is performed on the main surface of the substrate W.

[0090] Once the dry processing is complete, the control unit 90 controls the processing gas supply unit 38 to stop the supply of processing gas. For example, the control unit 90 may measure the elapsed time since the start of processing gas supply. This measurement is performed, for example, by a timer circuit (not shown) belonging to the control unit 90. The control unit 90 may stop the supply of processing gas when the elapsed time exceeds a predetermined dry processing time.

[0091] This dry treatment allows the main surface of the substrate W to be treated. On the other hand, this dry treatment generates impurities such as by-products of the reaction between the substrate W and the treatment gas in the dry treatment chamber 31.

[0092] After the dry treatment is completed, the control unit 90 controls the third pressure adjustment unit 35 to adjust the pressure in the dry treatment chamber 31 to the second dry pressure value PP2 (step S10, see also Figure 10). This allows more impurities in the dry treatment chamber 31 to be discharged to the outside through the third suction pipe 361. As a result, the internal space of the dry treatment chamber 31 can be made cleaner. For example, in step S10, the control unit 90 may close the third supply valve 372 as shown in the upper and center of Figure 9. This reduces the amount of inert gas used. Also, in step S10, the control unit 90 may maintain the opening of the third pressure adjustment valve 362 at a predetermined third opening. This reduces power consumption and extends the life of the third pressure adjustment valve 362. The predetermined third opening may be greater than or equal to the opening of the third pressure adjustment valve 362 in step S9, or it may be greater than that opening. As a specific example, the predetermined third opening may be fully open. This allows the pressure inside the dry processing chamber 31 to be reduced to the second dry pressure value PP2 more quickly.

[0093] On the other hand, after the transport processing gate GTP is closed, the control unit 90 controls the second pressure adjustment unit 25 to temporarily reduce the pressure inside the local transport chamber 21 to the second transport pressure value TP2 (step S11: corresponding to an example of the second step, see also Figure 10). This makes the internal space of the local transport chamber 21 cleaner. For example, in step S11, as shown on the upper left side of Figure 9, the control unit 90 may close the second supply valve 272 or maintain the second pressure adjustment valve 262 at a predetermined second opening. In other words, the control unit 90 may close the second supply valve 272 and maintain the second pressure adjustment valve 262 at the second opening to reduce the pressure inside the local transport chamber 21 to the second transport pressure value TP2. Closing the second supply valve 272 reduces the amount of inert gas used. Maintaining the opening of the second pressure adjustment valve 262 reduces power consumption and extends the lifespan of the second pressure adjustment valve 262. The predetermined second opening degree may be greater than or equal to the opening degree of the second pressure regulating valve 262 in step S6, or it may be greater than that opening degree. As a specific example, the predetermined second opening degree may be fully open. This allows the pressure in the local conveying chamber 21 to be reduced to the second conveying pressure value TP2 more quickly.

[0094] Next, the control unit 90 controls the second pressure adjustment unit 25 to adjust the pressure in the local transport chamber 21 to the first transport pressure value TP1 (step S12, see also Figure 10). For example, as shown in the upper and center of Figure 9, the control unit 90 opens the second supply valve 272 and controls the second pressure adjustment valve 262, similar to step S6. The trigger for starting step S12 is not particularly limited, but may be, for example, stopping the supply of processing gas into the dry processing chamber 31.

[0095] After steps S10 and S12, the dry processing module 1A transports the substrate W from the dry processing unit 30 to the local transport unit 20 (step S13: corresponding to an example of the first step). Specifically, the control unit 90 first opens the transport processing gate GTP. Then, the control unit 90 controls the local transport unit 22 and the pin lifting drive unit 341 to transport the substrate W from the dry processing chamber 31 into the local transport chamber 21 through the transport processing gate GTP. For example, the control unit 90 controls the pin lifting drive unit 341 to raise the multiple lifting pins 34. This transfers the substrate W from the stage 33 to the multiple lifting pins 34. Next, the control unit 90 controls the local transport unit 22 to move the hand 23 directly below the substrate W, and then controls the pin lifting drive unit 341 to lower the lifting pins 34. This transfers the substrate W to the hand 23 of the local transport unit 22. Next, the control unit 90 controls the local transport unit 22 to move the hand 23 into the local transport chamber 21. As a result, the substrate W is transported into the local transport chamber 21, as shown in the upper and right sides of Figure 9. Then, the control unit 90 closes the transport processing gate GTP.

[0096] During this transport process, the pressure inside the local transport chamber 21 is higher than the pressure inside the dry processing chamber 31. For example, the second pressure adjustment unit 25 continuously adjusts the pressure inside the local transport chamber 21 to the first transport pressure value TP1 for at least the entire duration that the transport processing gate GTP is open. This reduces the possibility of gas from the dry processing chamber 31 flowing into the local transport chamber 21.

[0097] Next, the control unit 90 controls the second pressure adjustment unit 25 to adjust the pressure inside the local transport chamber 21 to a second transport pressure value TP2 (step S14: corresponding to an example of the second step, see also Figure 10). For example, as shown on the lower left side of Figure 9, the control unit 90 may close the second supply valve 272 as in step S11, or maintain the second pressure adjustment valve 262 at a predetermined second opening (e.g., fully open). By adjusting the pressure inside the local transport chamber 21 to a smaller second transport pressure value TP2, even if a small amount of impurities enter the local transport chamber 21, more impurities can be discharged to the outside through the second suction pipe 261. In other words, the internal space of the local transport chamber 21 can be made cleaner.

[0098] Furthermore, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure in the load lock chamber 11 to a first load pressure value LP1 (step S15, see also Figure 10). For example, as shown on the lower left side of Figure 9, the control unit 90 opens the first supply valve 172 and controls the first pressure adjustment valve 162, similar to step S4. The trigger for starting step S15 is not particularly limited, but may be, for example, the closing of the transport processing gate GTP.

[0099] Next, the dry processing module 1A transports the substrate W from the local transport unit 20 to the load lock unit 10 (step S16). Specifically, the control unit 90 first opens the load transport gate GLT. Then, the control unit 90 controls the local transport unit 22 and the pin lifting drive unit 14 to transport the substrate W from the local transport chamber 21 into the load lock chamber 11 through the load transport gate GLT. For example, the control unit 90 controls the local transport unit 22 to move the hand 23 directly above the support pins 13, and then controls the pin lifting drive unit 14 to raise the support pins 13. This allows the substrate W to be placed on the support pins 13. Next, the control unit 90 controls the local transport unit 22 to move the hand 23 into the local transport chamber 21. As a result, the substrate W is transported into the load lock chamber 11, as shown in the lower and center of Figure 9. Then, the control unit 90 closes the load transport gate GLT.

[0100] During this transport process, the pressure inside the load lock chamber 11 is higher than the pressure inside the local transport chamber 21. For example, the first pressure adjustment unit 15 continuously adjusts the pressure inside the load lock chamber 11 to the first transport pressure value TP1 for at least the entire duration that the load transport gate GLT is open. This reduces the possibility of gas from the local transport chamber 21 flowing into the load lock chamber 11. In other words, it reduces the possibility of gas from the dry processing chamber 31 flowing into the load lock chamber 11 through the local transport chamber 21.

[0101] Next, the control unit 90 may control the first pressure adjustment unit 15 to temporarily adjust the pressure inside the load lock chamber 11 to the second load pressure value LP2 (see step S17, also Figure 10). For example, as shown on the lower and right side of Figure 9, the control unit 90 may close the first supply valve 172, as in step S3, and maintain the first pressure adjustment valve 162 at a predetermined first opening (e.g., fully open). By adjusting the pressure inside the load lock chamber 11 to the smaller second load pressure value LP2, even if a small amount of impurities enter the load lock chamber 11, more of the impurities can be discharged to the outside through the first suction pipe 161. In other words, the internal space of the load lock chamber 11 can be made cleaner.

[0102] Next, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure in the load lock chamber 11 to atmospheric pressure LP0 (step S18, see also Figure 10). Step S17 is the same as step S1.

[0103] Next, the control unit 90 opens the module transport gate GMT and controls the main transport unit 80 to transfer the substrate W from the load lock unit 10 to the main transport unit 80 (step S19).

[0104] As described above, in this embodiment, the transport processing gate GDP opens when the pressure in the local transport chamber 21 is higher than the pressure in the dry processing chamber 31, resulting in a first transport pressure value TP1 (steps S8 and S13). Therefore, the possibility of gas and impurities in the dry processing chamber 31 flowing into the local transport chamber 21 can be reduced. Thus, the possibility of contamination of the substrate W can be reduced.

[0105] On the other hand, when the transport processing gate GTP is closed, the second pressure adjustment unit 25 reduces the pressure inside the local transport chamber 21 to a second transport pressure value TP2, which is lower than the first transport pressure value TP1 (steps S11 and S14). As a result, even if a small amount of impurities flow into the local transport chamber 21 from the dry processing chamber 31, more impurities can be more reliably discharged from the local transport chamber 21. In other words, the internal space of the local transport chamber 21 can be made cleaner.

[0106] This is particularly effective when the local transport chamber 21 is provided in a one-to-one relationship with the dry processing chamber 31. Here, we consider a structure in which the local transport chamber 21 is connected to multiple dry processing chambers 31. In this structure, the local transport unit 22 sequentially loads and unloads the substrate W to and from the multiple dry processing chambers 31. Therefore, even if one of the multiple dry processing chambers 31 is in the process of dry processing, once the dry processing is completed in another dry processing chamber 31, the local transport chamber 21 and the other dry processing chamber 31 communicate with each other for loading and unloading the substrate W. As a result, the shielding time during which the local transport chamber 21 is shielded from the internal space of all the dry processing chambers 31 is relatively short. For example, the shielding time is very short compared to the dry processing time. Therefore, it is difficult to sufficiently reduce the pressure in the local transport chamber 21 during the shielding time. Consequently, it is difficult to sufficiently clean the internal space of the local transport chamber 21.

[0107] In contrast, when the local transport chamber 21 is provided in a one-to-one ratio with respect to the dry processing chamber 31, the local transport chamber 21 is isolated from the dry processing chamber 31 during the dry processing in the dry processing chamber 31. Therefore, the shielding time is longer than the dry processing time. Consequently, the pressure inside the local transport chamber 21 can be sufficiently reduced during the shielding time. Thus, the internal space of the local transport chamber 21 can be made cleaner.

[0108] Furthermore, in the example described above, the load transfer gate GLT opens when the pressure inside the load lock chamber 11 is higher than the pressure inside the local transfer chamber 21, resulting in a first load pressure value LP1 (steps S5 and S16). This reduces the possibility of gas and impurities in the dry processing chamber 31 flowing into the load lock chamber 11 through the local transfer chamber 21.

[0109] Furthermore, in the above example, when the load transport gate GLT is closed, the first pressure adjustment unit 15 reduces the pressure inside the load lock chamber 11 to a second load pressure value LP2, which is lower than the first load pressure value LP1 (steps S3 and S17). This allows for more reliable removal of impurities from the load lock chamber 11, even if only a small amount of impurities enter the load lock chamber 11. In other words, the internal space of the load lock chamber 11 can be made cleaner.

[0110] This is particularly effective when the load lock chamber 11 is provided in a one-to-one ratio with respect to the local transport chamber 21. This is the same as with the local transport chamber 21 and the dry processing chamber 31.

[0111] However, the load lock chamber 11 is further away from the dry processing chamber 31 than the local conveying chamber 21. Therefore, gas from the dry processing chamber 31 does not easily flow into the load lock chamber 11. Thus, the first pressure adjustment unit 15 may increase the pressure inside the load lock chamber 11 from the first load pressure value LP1 to the atmospheric pressure value LP0 without lowering it to the second load pressure value LP2. In other words, step S17 does not need to be performed. In this case, the first pressure adjustment unit 15 can raise the pressure inside the load lock chamber 11 from the first load pressure value LP1 to the atmospheric pressure value LP0 more quickly.

[0112] In the example described above, the dry processing module 1A includes a load lock chamber 11, a local transport chamber 21, and a dry processing chamber 31. However, it is not necessarily limited to this. For example, a load transport gate GLT may not be provided, and the load lock chamber 11 and the local transport chamber 21 may be in constant communication. In this case, the load lock chamber 11 and the local transport chamber 21 form a single chamber (corresponding to an example of an upstream chamber). In this case, one of the first pressure adjustment unit 15 and the second pressure adjustment unit 25 (corresponding to an example of an upstream pressure adjustment unit) is provided, and the other is omitted.

[0113] <Suction part> In the example shown in Figure 3, the first suction pipe 161 connected to the load lock chamber 11 and the second suction pipe 261 connected to the local transport chamber 21 are connected to a common suction section VP. For example, the downstream ends of the first suction pipe 161 and the second suction pipe 261 are connected to the upstream ends of the common pipe, and the downstream end of the common pipe is connected to the suction section VP. Hereafter, this suction section VP will be referred to as the first suction section VP1. In the example shown in Figure 3, the first suction section VP1 is not connected to the third suction pipe 361.

[0114] When the first suction unit VP1 is activated, it draws gas from the load lock chamber 11 through the first suction pipe 161 and draws gas from the local transport chamber 21 through the second suction pipe 261. In other words, the first suction unit VP1 serves both the load lock chamber 11 and the local transport chamber 21. This allows for a reduction in the number of suction units VP, thereby reducing manufacturing costs.

[0115] On the other hand, in the example shown in Figure 3, the third suction pipe 361 connected to the dry processing chamber 31 is connected to a suction section VP (hereinafter referred to as the second suction section VP2) that is separate from the first suction section VP1. In the example shown in Figure 3, the second suction section VP2 is not connected to the first suction pipe 161 or the second suction pipe 261. When the second suction section VP2 is activated, it draws gas from the dry processing chamber 31 through the third suction pipe 361. As a result, gas from the load lock chamber 11 and gas from the local transport chamber 21 do not flow into the third suction pipe 361 and the second suction section VP2. Therefore, the third pressure regulating valve 362 can adjust the pressure in the dry processing chamber 31 without being affected by these gases. In other words, pressure fluctuations in the dry processing chamber 31 caused by these gases can be avoided. Therefore, the third pressure regulating valve 362 can adjust the pressure in the dry processing chamber 31 with greater precision. Since the pressure value inside the dry processing chamber 31 affects the result of the dry processing on the substrate W, the dry processing unit 30 can perform the dry processing on the substrate W with higher precision.

[0116] <Dry Tower> In the example shown in Figure 3, multiple (two in this case) dry processing modules 1A are stacked vertically to form a single tower TW. The tower TW in Figure 3 does not include a wet processing module 1B. Hereafter, a tower TW that does not include a wet processing module 1B but includes two or more dry processing modules 1A will also be referred to as a dry tower TWA.

[0117] In the example shown in Figure 3, a piping space PS is provided directly below the entire load lock chamber 11, local transport chamber 21, and dry processing chamber 31 (i.e., the dry chamber) in the dry tower TWA. The space in which the dry chamber is provided is called the chamber space, and in the dry tower TWA, the chamber space and the piping space PS are arranged alternately in the vertical direction. At least a portion of the piping system of the dry processing module 1A is provided in the piping space PS.

[0118] In the example shown in Figure 3, the piping space PS is provided with at least a portion of the first suction pipe 161 and a first pressure regulating valve 162. Therefore, the first pressure regulating valve 162 is located near the load lock chamber 11. Consequently, the first pressure regulating valve 162 can adjust the pressure inside the load lock chamber 11 with greater precision. In addition, in the example shown in Figure 3, the piping space PS is also provided with at least a portion of the second suction pipe 261 and a second pressure regulating valve 262. Therefore, the second pressure regulating valve 262 can adjust the pressure inside the local transport chamber 21 with greater precision. Furthermore, in the example shown in Figure 3, the piping space PS is also provided with at least a portion of the third suction pipe 361 and a third pressure regulating valve 362. Therefore, the third pressure regulating valve 362 can adjust the pressure inside the dry processing chamber 31 with greater precision.

[0119] In the example shown in Figure 3, the suction section VP is located below the dry tower TWA. For example, the dry tower TWA may be located on an upper floor, while the suction section VP is located on a lower floor (under the floor). Since the suction section VP is larger than, for example, the first pressure regulating valve 162, by placing such a large suction section VP below the dry tower TWA, the height of each piping space PS can be reduced. Consequently, the height of the dry tower TWA can be reduced.

[0120] In the example shown in Figure 3, the piping space PS is provided with at least a portion of the first supply pipe 171 and the first supply valve 172. Therefore, the first supply valve 172 is located near the load lock chamber 11. Consequently, the first supply valve 172 can switch the supply and stop of gas to the load lock chamber 11 with high responsiveness. In addition, in the example shown in Figure 3, the piping space PS is also provided with at least a portion of the second supply pipe 271 and the second supply valve 272. Therefore, the second supply valve 272 can switch the supply and stop of gas to the local transport chamber 21 with high responsiveness. Furthermore, in the example shown in Figure 3, the piping space PS is also provided with at least a portion of the third supply pipe 371 and the third supply valve 372. Therefore, the third supply valve 372 can switch the supply and stop of gas to the dry processing chamber 31 with high responsiveness.

[0121] In the example described above, the dry tower TWA does not have a wet treatment module 1B. Therefore, the piping for the dry treatment module 1A and the piping for the wet treatment module 1B are not mixed within the dry tower TWA. This simplifies the piping configuration within the dry tower TWA.

[0122] <Second Embodiment> Figure 11 is a schematic diagram showing an example of the configuration of the transport system of a dry processing module 1A according to the second embodiment. In the example of Figure 11, the local transport unit 22 includes a plurality of hands 23. Two hands 23 are shown in Figure 11, and below, one hand 23 will be referred to as the first hand 231 and the other hand 23 as the second hand 232. The first hand 231 and the second hand 232 are spaced apart in the vertical direction. Here, the second hand 232 is located below the first hand 231. The distance between the first hand 231 and the second hand 232 is wider than the thickness of the substrate W. This distance may be set as narrow as possible, for example, 25 mm or less.

[0123] The first hand 231 and the second hand 232 may have the same shape in plan view. The first hand 231 and the second hand 232 may be arranged to overlap in plan view. The first hand 231 and the second hand 232 are fixed to each other by a connecting member 233. That is, the relative positional relationship between the first hand 231 and the second hand 232 is constant, and the distance between the first hand 231 and the second hand 232 is fixed. Referring also to Figure 1, for example, the hand 23 (first hand 231 and second hand 232) includes one or more elongated members 23a.

[0124] Referring to Figure 1, for example, the first hand 231 includes one or more elongated members 23a. In the example in Figure 1, there are multiple (specifically two) elongated members 23a. The multiple elongated members 23a are adjacent in plan view, and their base ends are connected by a connecting member 23b. The second hand 232 may also include elongated members 23a and a connecting member 23b, similar to the first hand 231. The connecting member 233 is fixed, for example, to the connecting member 23b of the first hand 231 and the connecting member 23b of the second hand 232. Hereafter, the portion including the first hand 231, the second hand 232, and the connecting member 233 will also be referred to as the end effector 230.

[0125] The hand movement drive unit 24 is controlled by the control unit 90 to move the end effector 230 along the horizontal direction. In other words, the hand movement drive unit 24 moves the first hand 231 and the second hand 232 together along the horizontal direction. For example, the hand movement drive unit 24 includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the hand 23. The power transmission unit includes, for example, at least one of an arm mechanism, a ball screw mechanism, a rotation mechanism, and a cam mechanism. As a specific example, in Figure 11, the hand movement drive unit 24 includes a forward / backward drive unit 241 and a rotation drive unit 242.

[0126] The forward / backward drive unit 241 moves the end effector 230 along one horizontal direction (hereinafter referred to as the forward / backward direction). The forward / backward direction is, for example, the direction along the longitudinal direction of the long member 23a. The forward / backward drive unit 241 includes, for example, a plurality of arms and a motor that adjusts the connection angle of the plurality of arms. The end effector 230 is connected to one end of the connection body including the plurality of arms, and the other end is connected to the rotary drive unit 242. By adjusting the connection angle of the arms, the hand 23 moves along the forward / backward direction. Note that the forward / backward drive unit 241 may include a linear motion mechanism such as a ball screw mechanism instead of an arm drive.

[0127] The rotary drive unit 242 includes a motor and rotates the end effector 230 and the forward / backward drive unit 241 together around a rotation axis that is aligned vertically. This rotation allows the orientation of the end effector 230 to be adjusted. Specifically, the rotary drive unit 242 rotates the end effector 230 between the load rotation position and the processing rotation position, which will be described below. The load rotation position is the rotation position in which the tip of the long member 23a faces the load lock unit 10, and the processing rotation position is the rotation position in which the tip of the long member 23a faces the dry processing unit 30.

[0128] In the example shown in Figure 11, the hand movement drive unit 24 does not include a lifting drive unit for raising and lowering the end effector 230.

[0129] The dry processing unit 30 includes a plurality of lifting pins 34, which are an example of a support member for supporting the substrate W, and a pin lifting drive unit 341. The pin lifting drive unit 341 moves the plurality of lifting pins 34 to at least each of the following height positions H31, H32, and H33. The first height position H31 is a position in which the tips of the plurality of lifting pins 34 are above the first hand 231. The substrate W supported at the first height position H31 is located above the first hand 231. The second height position H32 is a position in which the plurality of lifting pins 34 can support the substrate W between the first hand 231 and the second hand 232. The substrate W supported at the second height position H32 is separated from both the first hand 231 and the second hand 232. At the second height position H32, the tips of the plurality of lifting pins 34 are between the first hand 231 and the second hand 232. The third height position H33 is the position where the tips of the multiple lifting pins 34 are below the second hand 232. In the example in Figure 11, at the third height position H33, the tips of the multiple lifting pins 34 are located below the upper surface of the stage 33. The difference (height width) between the first height position H31 and the third height position H33 is greater than the height width between the upper surface of the first hand 231 and the lower surface of the second hand 232. This difference is, for example, 35 mm or less.

[0130] In the example shown in Figure 3, the dry processing unit 30 is provided with a stage 33. The first height position H31 and the second height position H32 are positions where the tips of the multiple lifting pins 34 are above the upper surface of the stage 33, and the third height position H33 is a position where the tips of the multiple lifting pins 34 are below the upper surface of the stage 33.

[0131] In the example shown in Figure 11, the load lock unit 10 includes a plurality of support pins 13, which are an example of a support member for supporting the substrate W, and a pin lifting drive unit 14. The pin lifting drive unit 14 may move the plurality of support pins 13 to at least each of the following height positions H11, H12, and H13. The relative positional relationship between the first height position H11 and the end effector 230 is the same as the relative positional relationship between the first height position H31 and the end effector 230. That is, the first height position H11 is the position where the tips of the plurality of support pins 13 are above the first hand 231. The same applies to the second height position H32 and the third height position H33. In other words, the second height position H12 is the position where the tips of the multiple support pins 13 are between the first hand 231 and the second hand 232, and the third height position H13 is the position where the tips of the multiple support pins 13 are below the second hand 232.

[0132] In this dry processing module 1A, pressure adjustment is performed in the same manner as in the first embodiment. Figures 12 to 15 schematically show an example of the changes in the operation of the dry processing module 1A according to the second embodiment. Below, an example of operation when three substrates W are sequentially transported to the dry processing module 1A will be described. Hereinafter, the substrate W that is first transported to the dry processing module 1A will be called the first substrate W1, the substrate W that is transported to the dry processing module 1A after the first substrate W1 will be called the second substrate W2, and the substrate W that is transported to the dry processing module 1A after the second substrate W2 will be called the third substrate W3.

[0133] First, the first pressure adjustment unit 15 adjusts the pressure inside the load lock chamber 11 to within the atmospheric pressure range, and the main transport unit 80 transports the first substrate W1 into the load lock chamber 11 (see the upper and left sides of Figure 12).

[0134] Next, the first pressure adjustment unit 15 adjusts the pressure inside the load lock chamber 11 to within the vacuum range. For example, the first pressure adjustment unit 15 first reduces the pressure inside the load lock chamber 11 to the second load pressure value LP2, and then adjusts it to the first load pressure value LP1. As a specific example, first the control unit 90 closes the first supply valve 172 and maintains the first pressure adjustment valve 162 at a predetermined first opening (e.g., fully open) (see upper and center of Figure 12). This reduces the pressure inside the load lock chamber 11 to the second load pressure value LP2. Next, the control unit 90 opens the first supply valve 172 and controls the first pressure adjustment valve 162 (see upper and right of Figure 12). This adjusts the pressure inside the load lock chamber 11 to the first load pressure value LP1.

[0135] Next, the control unit 90 opens the load transport gate GLT. The control unit 90 then controls the pin lifting drive unit 14 and the local transport unit 22 to transport the first substrate W1 from the load lock unit 10 to the local transport unit 20 (see the lower and left sides of Figure 12). Here, as an example, the local transport unit 22 transports the first substrate W1 using the first hand 231. For example, the control unit 90 controls the pin lifting drive unit 14 to stop the support pin 13 at a first height position H11, and then controls the local transport unit 22 to move the end effector 230 directly below the first substrate W1. The control unit 90 then controls the pin lifting drive unit 14 to lower the support pin 13 to a second height position H12 or a third height position H13. As a result, the first substrate W1 is handed over to the first hand 231. The control unit 90 then controls the local transport unit 22 to move the end effector 230 into the local transport chamber 21. As a result, the first substrate W1 is supported by the first hand 231 within the local transport chamber 21. Next, the control unit 90 closes the load transport gate GLT.

[0136] During this transport process, the pressure inside the load lock chamber 11 is higher than the pressure inside the local transport chamber 21. Therefore, similar to the first embodiment, the possibility of gas from the local transport chamber 21 flowing into the load lock chamber 11 can be reduced.

[0137] Next, the control unit 90 controls the second pressure adjustment unit 25 to adjust the pressure in the local transport chamber 21 to the first transport pressure value TP1. For example, the control unit 90 opens the second supply valve 272 and controls the second pressure adjustment valve 262 (see the lower and center of Figure 12).

[0138] Next, the control unit 90 opens the transport processing gate GTP. The control unit 90 then controls the local transport unit 22 and the pin lifting drive unit 341 to transport the first substrate W1 to the dry processing unit 30 (see the lower and right sides of Figure 12). For example, first the control unit 90 controls the local transport unit 22 to move the end effector 230 directly above the lifting pin 34. Then the control unit 90 controls the pin lifting drive unit 341 to raise the lifting pin 34 from, for example, the third height position H33 to the first height position H31. This allows the first substrate W1 to be passed to the lifting pin 34. Next, the control unit 90 controls the local transport unit 22 to move the end effector 230 into the local transport chamber 21, and then controls the pin lifting drive unit 341 to lower the lifting pin 34 to the third height position H33. This allows the first substrate W1 to be passed to the stage 33. Finally, the control unit 90 closes the transport processing gate GTP.

[0139] During this transport process, the pressure inside the local transport chamber 21 is higher than the pressure inside the dry processing chamber 31. Therefore, similar to the first embodiment, the possibility of gas from the dry processing chamber 31 flowing into the local transport chamber 21 can be reduced.

[0140] Next, the control unit 90 controls the third pressure adjustment unit 35 and the processing gas supply unit 38 to perform a dry treatment on the first substrate W1 (see the upper and left sides of Figure 13).

[0141] On the other hand, after closing the load transport gate GLT, the control unit 90 may control the first pressure adjustment unit 15 to temporarily reduce the pressure inside the load lock chamber 11 to the second load pressure value LP2. As a specific example, the control unit 90 may close the first supply valve 172 and maintain the first pressure adjustment valve 162 at a predetermined opening (see the lower and center of Figure 12). This makes it possible to further clean the internal space of the load lock chamber 11.

[0142] Next, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure in the load lock chamber 11 to within the atmospheric pressure range. For example, the control unit 90 opens the first supply valve 172 and closes the first pressure adjustment valve 162 (see the upper and left sides of Figure 13).

[0143] Next, the control unit 90 opens the dry transport gate GDT and controls the main transport unit 80 to load the second substrate W2 into the load lock chamber 11 (see upper and center of Figure 13). Then, the control unit 90 closes the dry transport gate GDT.

[0144] Next, the control unit 90 may control the first pressure adjustment unit 15 to temporarily reduce the pressure inside the load lock chamber 11 to the second load pressure value LP2. For example, the control unit 90 closes the first supply valve 172 and opens the first pressure adjustment valve 162 to a predetermined first opening (see the upper and right sides of Figure 13).

[0145] Next, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure in the load lock chamber 11 to the first load pressure value LP1. For example, the control unit 90 opens the first supply valve 172 and controls the first pressure adjustment valve 162 (see the lower and left side of Figure 13).

[0146] Next, the control unit 90 opens the load transport gate GLT. The control unit 90 then controls the pin lifting drive unit 14 and the local transport unit 22 to transport the second substrate W2 from the load lock unit 10 to the local transport unit 20. In this example, the local transport unit 22 transports the second substrate W2 using the first hand 231. As a result, the second substrate W2 is supported by the first hand 231 within the local transport chamber 21 (see the lower and center of Figure 13). The control unit 90 then closes the load transport gate GLT. The second substrate W2 waits in the local transport chamber 21 until the dry processing of the first substrate W1 is complete (see the lower and right of Figure 13).

[0147] On the other hand, after closing the load transport gate GLT, the control unit 90 may control the first pressure adjustment unit 15 to temporarily reduce the pressure inside the load lock chamber 11 to the second load pressure value LP2. For example, the control unit 90 may close the first supply valve 172 and maintain the first pressure adjustment valve 162 at a predetermined opening (see the lower and right sides of Figure 13). This makes it possible to further clean the internal space of the load lock chamber 11.

[0148] When the dry processing of the first substrate W1 is completed, the first substrate W1 is discharged from the dry processing chamber 31. Before the first substrate W1 is discharged from the dry processing chamber 31, the control unit 90 controls the second pressure adjustment unit 25 to raise the pressure in the local transport chamber 21 to the first transport pressure value TP1. For example, the control unit 90 opens the second supply valve 272 and controls the second pressure adjustment valve 262 (see the upper and left sides of Figure 14).

[0149] Next, the control unit 90 opens the transport processing gate GTP. The control unit 90 then controls the local transport unit 22 and the pin lifting drive unit 341 to transport the first substrate W1 from the dry processing unit 30 to the local transport unit 20 (see upper and center of Figure 14). Here, since the first hand 231 supports the second substrate W2, the first substrate W1 is transported using the second hand 232. For example, the control unit 90 controls the pin lifting drive unit 341 to raise the lifting pin 34 from the third height position H33 to the second height position H32. As a result, the first substrate W1 is passed from the stage 33 to the lifting pin 34. Since the lifting pin 34 is located at the second height position H32, the first substrate W1 is positioned between the first hand 231 and the second hand 232. Next, the control unit 90 controls the local transport unit 22 to move the end effector 230 to a position where the second hand 232 is directly below the first substrate W1. Then, the control unit 90 controls the pin lifting drive unit 341 to lower the lifting pin 34 to the third height position H33. This allows the first substrate W1 to be handed over to the second hand 232. Next, the control unit 90 controls the local transport unit 22 to move the end effector 230 into the local transport chamber 21. As a result, the first substrate W1 and the second substrate W2 are supported within the local transport chamber 21 by the second hand 232 and the first hand 231, respectively. Finally, the control unit 90 closes the transport processing gate GTP.

[0150] During this transport process, the pressure inside the local transport chamber 21 is higher than the pressure inside the dry processing chamber 31. Therefore, similar to the first embodiment, the possibility of gas from the dry processing chamber 31 flowing into the local transport chamber 21 can be reduced.

[0151] Next, the first substrate W1 is transported from the local transport unit 20 to the load lock unit 10. First, the control unit 90 may control the second pressure adjustment unit 25 to reduce the pressure in the local transport chamber 21 to the second transport pressure value TP2. For example, the control unit 90 closes the second supply valve 272 and maintains the second pressure adjustment valve 262 at a predetermined second opening (see upper and right sides of Figure 14). This makes the internal space of the local transport chamber 21 cleaner. The control unit 90 also controls the first pressure adjustment unit 15 to increase the pressure in the load lock chamber 11 to the first load pressure value LP1. For example, the control unit 90 opens the first supply valve 172 and controls the first pressure adjustment valve 162 (see upper and right sides of Figure 14).

[0152] Next, the control unit 90 opens the load transport gate GLT. The control unit 90 then controls the pin lifting drive unit 14 and the local transport unit 22 to load the first substrate W1 into the load lock chamber 11 (see the lower and left sides of Figure 14). For example, the control unit 90 controls the local transport unit 22 to move the end effector 230 directly above the support pin 13, and then controls the pin lifting drive unit 14 to raise the support pin 13 from the third height position H13 to the second height position H12. This allows the first substrate W1 to be placed on the support pin 13. Next, the control unit 90 controls the local transport unit 22 to move the end effector 230 into the local transport chamber 21. Finally, the control unit 90 closes the load transport gate GLT.

[0153] Next, the second substrate W2 is transported to the dry processing unit 30. First, the control unit 90 controls the second pressure adjustment unit 25 to adjust the pressure in the local transport chamber 21 to the first transport pressure value TP1. For example, the control unit 90 opens the second supply valve 272 and controls the second pressure adjustment valve 262 (see the lower and center of Figure 14).

[0154] Next, the control unit 90 opens the transport processing gate GTP. The control unit 90 then controls the local transport unit 22 and the pin lifting drive unit 341 to transport the second substrate W2 to the dry processing unit 30 (see the lower and right sides of Figure 14). Next, the control unit 90 closes the transport processing gate GTP.

[0155] During this transport process, the pressure inside the local transport chamber 21 is higher than the pressure inside the dry processing chamber 31, thus reducing the possibility of gas from the dry processing chamber 31 flowing into the local transport chamber 21.

[0156] Next, the control unit 90 controls the third pressure adjustment unit 35 and the processing gas supply unit 38 to perform dry processing on the second substrate W2 (see the left side of Figure 15).

[0157] On the other hand, after the load transport gate GLT is closed, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure inside the load lock chamber 11 to within the atmospheric pressure range. Here, the control unit 90 controls the first pressure adjustment unit 15 to temporarily lower the pressure to the second load pressure value LP2. For example, the control unit 90 closes the first supply valve 172 and maintains the first pressure adjustment valve 162 at a predetermined first opening (see the lower and center of Figure 14).

[0158] Next, the control unit 90 controls the first pressure adjustment unit 15 to adjust the pressure in the load lock chamber 11 to atmospheric pressure LP0. For example, the control unit 90 opens the first supply valve 172 and closes the first pressure adjustment valve 162 (see the lower and right sides of Figure 14).

[0159] Next, the control unit 90 opens the dry transport gate GDT. Then, the control unit 90 controls the main transport unit 80 to eject the first substrate W1 from the load lock chamber 11 (see the left side of Figure 15).

[0160] Next, the control unit 90 controls the main transport unit 80 to load the third substrate W3 into the load lock chamber 11 (see the right side of Figure 15). Thereafter, the same operation is performed sequentially on the substrates W.

[0161] As described above, in the second embodiment, as in the first embodiment, the possibility of impurities in the dry processing chamber 31 flowing into the local transport chamber 21 and the load lock chamber 11 can be reduced. Therefore, the possibility of contamination of the substrate W can be reduced.

[0162] Furthermore, in the second embodiment, while the dry processing unit 30 is dry processing the preceding substrate W (for example, the first substrate W1), the subsequent substrate W is waiting in a vacuum state within the dry processing module 1A. In the example described above, the subsequent substrate W is waiting in the local transport chamber 21. In other words, the pressure adjustment for transporting the subsequent second substrate W2 (in this case, the pressure adjustment of the load lock chamber 11) is completed by the time the dry processing of the preceding first substrate W1 is finished. Therefore, the subsequent second substrate W2 can be transported into the dry processing chamber 31 more quickly after the dry processing of the preceding first substrate W1 is completed. Thus, the throughput of the substrate processing apparatus 100 can be improved.

[0163] Incidentally, in the case of dry processing, such as etching processing that etches the film to be etched on the substrate W, there is a risk that by-products resulting from the reaction between the processing gas and the substrate W may adhere to the substrate W as impurities. Furthermore, there is a risk that these adhering substances may fall off the substrate W during transport of the dry-processed substrate W.

[0164] Therefore, as described above, the dry-treated substrate W may be transported by the lower second hand 232, and the un-dried substrate W may be transported by the upper first hand 231. Since the first hand 231 is located above the second hand 232, the un-dried substrate W is transported horizontally at a higher position than the dry-treated substrate W. Consequently, even if impurities attached to the preceding dry-treated substrate W fall off during its horizontal transport, they will not contaminate the transport path of the subsequent un-dried substrate W. This reduces the possibility of contamination of the un-dried substrate W.

[0165] Furthermore, in the example shown in Figure 11, the load lock unit 10 includes a pin lifting drive unit 14, and the dry processing unit 30 includes a pin lifting drive unit 341. In other words, the load lock unit 10 and the dry processing unit 30 have the function of lifting and lowering the substrate W. Therefore, the local transport unit 20 does not need to have the function of lifting and lowering the substrate W. Accordingly, in the example shown in Figure 11, the hand movement drive unit 24 of the local transport unit 20 is not provided with a lifting drive unit. As a result, the vertical size of the local transport unit 20 can be reduced. That is, the local transport unit 22 includes a hand movement drive unit 24 that moves the hand 23, so its vertical size is large, but by omitting the lifting drive unit, the vertical size of the local transport unit 20 is effectively reduced. On the other hand, the load lock unit 10 only needs to support the substrate W and does not need to have a horizontal movement function. Therefore, even if the load lock unit 10 is provided with a lifting drive unit for the substrate W, its vertical size will not be significantly larger than that of the local transport unit 20. The same applies to the dry processing unit 30.

[0166] Furthermore, if the local transport unit 20 does not include a lifting drive unit, the end effector 230 does not move up or down, so the height width of the load transport gate GLT and the transport processing gate GTP can be reduced. The flow velocity of the gas flowing from the load lock chamber 11 through the load transport gate GLT into the local transport chamber 21 during transport can be increased. This further reduces the possibility of gas flowing from the local transport chamber 21 into the load lock chamber 11. The possibility of gas flowing from the dry processing chamber 31 into the local transport chamber 21 can also be further reduced.

[0167] <Bellows> In the example shown in Figure 11, the pin lifting drive unit 14 is located in the external space of the load lock chamber 11. In the example shown in Figure 11, the lower ends of the multiple support pins 13 are connected to the upper surface of the support plate 18. The support plate 18 has, for example, a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. In the example shown in Figure 11, an opening is formed at the bottom of the load lock chamber 11, and the multiple support pins 13 are arranged to pass through this opening. In the example shown in Figure 11, a bellows 19 is provided between the bottom of the load lock chamber 11 and the support plate 18. The bellows 19 has a cylindrical and corrugated shape. In the example shown in Figure 11, multiple bellows 19 are provided, each surrounding the lower portion of the multiple support pins 13. The bellows 19 are deformable in the vertical direction. That is, the vertical size of the bellows 19 is variable. The upper end periphery of the bellows 19 is connected to the periphery of the opening of the load lock chamber 11, and the lower end periphery of the bellows 19 is connected to the periphery of the support plate 18.

[0168] The pin lifting drive unit 14 is located below the support plate 18. The pin lifting drive unit 14 is connected to the support plate 18 and moves the support plate 18 up and down. This causes the multiple support pins 13 connected to the support plate 18 to move up and down. Also, as shown in Figure 11, a bellows 19 is provided one-to-one for each indicator pin 13. This allows for a reduction in the volume of the vacuum section within the load lock chamber 11 compared to a structure where a single bellows surrounds multiple support pins 13. As a result, the first pressure adjustment unit 15 can adjust the pressure within the load lock chamber 11 with greater precision.

[0169] Since the pin lifting drive unit 14 is located outside the load lock chamber 11, the pin lifting drive unit 14 can be placed in an atmospheric pressure space (e.g., piping space PS). This improves the reliability of the pin lifting drive unit 14.

[0170] In the example shown in Figure 11, the pin lifting drive unit 341 is located in the space outside the dry processing chamber 31. In the example shown in Figure 11, the lower ends of the multiple lifting pins 34 are connected to the upper surface of the support plate 342, and a bellows 343 is provided between the bottom of the dry processing chamber 31 and the support plate 342. In the example shown in Figure 11, multiple bellows 343 are provided, each surrounding the lower portion of the multiple lifting pins 34. These are similar to the support plate 18 and the bellows 19, respectively.

[0171] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is illustrative in all respects, and this disclosure is not limited thereto. Furthermore, the various modifications described above can be applied in combination as long as they do not contradict each other. And it is understood that a number of modifications not illustrated can be conceivable without falling outside the scope of this disclosure.

[0172] For example, in the above example, the first pressure regulating valve 162 is provided in the first suction pipe 161. However, the first pressure regulating valve 162 may also be provided in the first supply pipe 171. Similarly, the second pressure regulating valve 262 may be provided in the second supply pipe 271, and the third pressure regulating valve 362 may be provided in the third supply pipe 371.

[0173] This disclosure includes the following aspects:

[0174] The first embodiment is a substrate processing apparatus comprising: an upstream chamber; an upstream pressure adjustment unit that supplies gas to the upstream chamber and sucks the gas from the upstream chamber to adjust the pressure inside the upstream chamber; a dry processing chamber connected to the upstream chamber via a first gate, in which dry processing is performed on the substrate when the first gate is closed; a transport unit that transports the substrate between the upstream chamber and the dry processing chamber through the open first gate; and a control unit that controls the upstream pressure adjustment unit to set the pressure inside the upstream chamber to a first pressure value higher than the pressure inside the dry processing chamber, opens the first gate, controls the transport unit to transport the substrate, and, with the first gate closed, controls the upstream pressure adjustment unit to reduce the pressure inside the upstream chamber to a second pressure value lower than the first pressure value.

[0175] A second embodiment is a substrate processing apparatus according to the first embodiment, wherein the upstream chamber is provided in a one-to-one relationship with the dry processing chamber.

[0176] A third embodiment is a substrate processing apparatus according to the first or second embodiment, wherein the upstream pressure adjustment unit includes a supply pipe connected to the upstream chamber and a supply valve provided in the supply pipe, and the control unit closes the supply valve to reduce the pressure in the upstream chamber to the second pressure value.

[0177] A fourth embodiment is a substrate processing apparatus according to any one of the first to third embodiments, wherein the upstream pressure adjustment unit includes a suction pipe connected to the upstream chamber and a pressure adjustment valve provided in the suction pipe, and the control unit maintains the opening of the pressure adjustment valve at a predetermined opening to reduce the pressure in the upstream chamber to the second pressure value.

[0178] A fifth embodiment is a substrate processing apparatus according to any one of the first to fourth embodiments, comprising: a load lock chamber connected to a local transport chamber which is an upstream chamber through a second gate; and a load pressure adjustment unit that supplies gas to the load lock chamber and sucks the gas from the load lock chamber to adjust the pressure inside the load lock chamber, wherein the control unit controls the load pressure adjustment unit to set the pressure inside the load lock chamber to a first load pressure value higher than the pressure inside the local transport chamber, opens the second gate, controls the transport unit to transport the substrate between the load lock chamber and the local transport chamber, and with the second gate closed, controls the load pressure adjustment unit to reduce the pressure inside the load lock chamber to a second load pressure value lower than the first load pressure value.

[0179] A sixth embodiment is a substrate processing apparatus according to the fifth embodiment, comprising a dry pressure adjustment unit for adjusting the pressure in the dry processing chamber, wherein the load pressure adjustment unit includes a first suction tube connected to the load lock chamber, the upstream pressure adjustment unit includes a second suction tube connected to the upstream chamber, the load pressure adjustment unit and the upstream pressure adjustment unit include a first suction unit connected to the first suction tube and the second suction tube, and the dry pressure adjustment unit includes a third suction tube connected to the dry processing chamber and a second suction unit connected to the third suction tube.

[0180] A seventh aspect is a substrate processing method comprising: a first step of opening a first gate between the upstream chamber and the dry processing chamber while the pressure in the upstream chamber is set to a first pressure value higher than the pressure in the dry processing chamber, and a transport unit transports the substrate between the upstream chamber and the dry processing chamber; and a second step of closing the first gate and reducing the pressure in the upstream chamber to a second pressure value lower than the first pressure value.

[0181] According to the first and seventh embodiments, during transport, the pressure in the upstream chamber is higher than the pressure in the dry processing chamber, thus reducing the possibility of gases and impurities in the dry processing chamber flowing into the upstream chamber. Furthermore, when the first gate is closed, the pressure in the upstream chamber drops to the second pressure value. Therefore, even if impurities flow into the upstream chamber, they can be more reliably discharged from the upstream chamber. This reduces the possibility of substrate contamination in the upstream chamber.

[0182] According to the second embodiment, the isolation period during which the upstream chamber is isolated from the internal space of the dry processing chamber is relatively long. Therefore, the pressure inside the upstream chamber can be sufficiently reduced. Consequently, impurities can be sufficiently discharged from the upstream chamber.

[0183] According to the third embodiment, the amount of gas used can be reduced.

[0184] According to the fourth embodiment, power consumption can be reduced.

[0185] According to the fifth aspect, the possibility of gas in the local transport chamber flowing into the load lock chamber can be reduced. In other words, the possibility of gas in the dry processing chamber flowing into the local load lock chamber through the local transport chamber can be reduced.

[0186] According to the sixth embodiment, since the gas drawn in from the load lock chamber and the local conveying chamber does not flow into the third suction pipe, pressure fluctuations in the dry processing chamber caused by the gas can be avoided. [Explanation of symbols]

[0187] 11 Load Lock Chamber 15. Load pressure adjustment section (first pressure adjustment section) 161 1st suction tube 21 Upstream chamber, local conveying chamber 22. Conveyor Unit (Local Conveyor Unit) 25 Upstream pressure adjustment section (second pressure adjustment section) 261 Suction tube, 2nd suction tube 262 Pressure regulating valve (2nd pressure regulating valve) 271 Supply pipe (second supply pipe) 272 Supply valve (second supply valve) 30 Dry Processing Units 31 Dry processing chamber 35 Dry pressure adjustment section (third pressure adjustment section) 361 3rd suction tube 90 Control Unit LP1 First load pressure value LP2 Second Load Pressure Value GLT Gate 2 (Load Transfer Gate) GTP Gate 1 (Transport Processing Gate) TP1 First pressure value (first transport pressure value) TP2 Second pressure value (First transport pressure value) TWA Dry Tower VP1 1st suction part VP2 2nd suction part W board

Claims

1. Upstream chamber and An upstream pressure adjustment unit supplies gas to the upstream chamber and draws gas from the upstream chamber to adjust the pressure inside the upstream chamber, A dry processing chamber is connected to the upstream chamber via a first gate, and when the first gate is closed, a dry processing chamber is performed on the substrate. A transport unit that transports the substrate between the upstream chamber and the dry processing chamber through the first gate in an open state, A control unit controls the upstream pressure adjustment unit to set the pressure in the upstream chamber to a first pressure value higher than the pressure in the dry processing chamber, opens the first gate, controls the transport unit to transport the substrate, and, with the first gate closed, controls the upstream pressure adjustment unit to reduce the pressure in the upstream chamber to a second pressure value lower than the first pressure value. A substrate processing apparatus comprising:

2. A substrate processing apparatus according to claim 1, A substrate processing apparatus in which the upstream chamber is provided in a one-to-one ratio with the dry processing chamber.

3. A substrate processing apparatus according to claim 1 or claim 2, The aforementioned upstream pressure adjustment unit is A supply pipe connected to the upstream chamber, A supply valve provided in the supply pipe and Includes, A substrate processing apparatus wherein the control unit closes the supply valve to reduce the pressure in the upstream chamber to the second pressure value.

4. A substrate processing apparatus according to claim 1 or claim 2, The aforementioned upstream pressure adjustment unit is A suction tube connected to the upstream chamber, A pressure regulating valve provided in the suction pipe and Includes, A substrate processing apparatus comprising a control unit that maintains the opening of the pressure regulating valve at a predetermined opening to reduce the pressure in the upstream chamber to the second pressure value.

5. A substrate processing apparatus according to claim 1 or claim 2, Through the second gate, the load lock chamber is connected to the local transport chamber, which is the upstream chamber, A load pressure adjustment unit supplies the gas to the load lock chamber and sucks the gas from the load lock chamber to adjust the pressure inside the load lock chamber. Equipped with, The control unit, The load pressure adjustment unit is controlled to set the pressure in the load lock chamber to a first load pressure value higher than the pressure in the local transport chamber, the second gate is opened, and the transport unit is controlled to transport the substrate between the load lock chamber and the local transport chamber. A substrate processing apparatus that, with the second gate closed, controls the load pressure adjustment unit to reduce the pressure in the load lock chamber to a second load pressure value lower than the first load pressure value.

6. A substrate processing apparatus according to claim 5, A dry pressure adjustment unit that adjusts the pressure inside the dry processing chamber. Equipped with, The load pressure adjustment unit includes a first suction pipe connected to the load lock chamber. The upstream pressure adjustment unit includes a second suction pipe connected to the upstream chamber. The load pressure adjustment unit and the upstream pressure adjustment unit include a first suction unit connected to the first suction pipe and the second suction pipe, The dry pressure adjustment unit is A third suction tube connected to the dry processing chamber, The second suction section connected to the third suction tube and Includes substrate processing equipment.

7. The first step involves opening a first gate between the upstream chamber and the dry processing chamber while the pressure in the upstream chamber is set to a first pressure value higher than the pressure in the dry processing chamber, and the transport unit transports the substrate between the upstream chamber and the dry processing chamber. With the first gate closed, the second step is to reduce the pressure in the upstream chamber to a second pressure value lower than the first pressure value. A substrate processing method comprising:

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