Silicon nitride substrate and method for manufacturing the same
A silicon nitride substrate with controlled particle sizes and iron content addresses thermal conductivity and strength issues, enhancing heat dissipation and power supply in semiconductor applications.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- JAPAN FINE CERAMICS
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-30
AI Technical Summary
Silicon nitride substrates have lower thermal conductivity compared to aluminum nitride substrates, limiting their ability to efficiently dissipate heat from semiconductor chips, and they often contain trace amounts of iron that degrade properties like bending strength and dielectric breakdown strength, complicating manufacturing and increasing costs.
A silicon nitride substrate with controlled particle sizes and iron content, along with specific impurities, is manufactured to enhance strength and thermal conductivity while maintaining dielectric breakdown strength, using a method involving slurry preparation, nitriding, and sintering at controlled temperatures.
The substrate achieves improved strength and thermal conductivity, enabling efficient heat dissipation and supporting higher power supply to semiconductor circuit boards, while minimizing the negative effects of iron and other impurities.
Smart Images
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