Substrate processing apparatus and method for manufacturing articles

Abstract

This technology is advantageous for achieving a uniform dried film obtained by drying a liquid on a substrate. [Solution] The substrate processing apparatus comprises a container, a substrate holding portion disposed inside the container and holding a substrate having a main surface on which liquid is provided, a top plate having a plurality of openings and positioned opposite the main surface of the substrate, and an adjustment mechanism that can increase or decrease the distance between the substrate and the top plate relative to a reference distance by elastically deforming the top plate.

Description

Technical Field

[0006] ,

[0007] ,

[0001] The present disclosure relates to a substrate processing apparatus and a method for manufacturing an article.

Background Art

[0002] When manufacturing an article such as a panel (organic EL panel) having an OLED (Organic Light Emitting Diode) which is an organic EL (Electro Luminescence) element, a method of applying a liquid film to a desired location on a substrate using an inkjet device is known. The liquid film is, for example, a film composed of a solution containing a solute and a solvent. By drying the liquid film applied on the substrate, a film (layer) is formed on the substrate. For drying the liquid film, a vacuum drying device which is a substrate processing device is used.

[0003] If unevenness occurs in the drying rate of the liquid film during the drying process, unevenness may occur in the thickness of the dried film formed on the substrate after drying.

[0004] Patent Document 1 discloses a substrate processing apparatus including an enclosure wall surrounding a substrate, a rectifying plate disposed above the substrate, and a lifting mechanism for lifting and lowering the entire rectifying plate so as to bring the rectifying plate into contact with and away from the substrate.

Prior Art Documents

Patent Documents

[0005] [[ID=!30]]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, with the increase in the size of the substrate or the miniaturization of the liquid film, it has become difficult to make the drying rate of the liquid applied to the substrate uniform, and improvement has been demanded.

[0007] This disclosure provides a technique advantageous for achieving uniformity in a dried film obtained by drying a liquid on a substrate. [Means for solving the problem]

[0008] One aspect of the present disclosure is a substrate processing apparatus characterized by comprising: a container; a substrate holding portion disposed inside the container and holding a substrate having a main surface on which a liquid is provided; a top plate having a plurality of openings and positioned opposite the main surface of the substrate; and an adjustment mechanism that can increase or decrease the distance between the substrate and the top plate relative to a reference distance by elastically deforming the top plate. [Effects of the Invention]

[0009] This disclosure provides a technique that is advantageous for making a dried film obtained by drying a liquid on a substrate uniform. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to the first embodiment. [Figure 2] This is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to the first embodiment. [Figure 3] This is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to the first embodiment. [Figure 4] This is a flowchart of the distance adjustment method according to the first embodiment. [Figure 5] (a) is an explanatory diagram showing the state of the top plate according to the first embodiment. (b) is an explanatory diagram showing the state of the top plate according to the first embodiment. (c) is an explanatory diagram showing the state of the top plate according to the first embodiment. (d) is an explanatory diagram showing the state of the top plate according to the first embodiment. [Figure 6] This is an explanatory diagram showing the correlation curve between drying speed and distance according to the first embodiment. [Figure 7] This graph shows an example of pressure control in the drying process according to the first embodiment. [Figure 8]This is a flowchart of the distance adjustment method according to the second embodiment. [Figure 9] This is a diagram illustrating a part of the substrate processing apparatus of the third embodiment. [Figure 10] This is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to the third embodiment. [Figure 11] This is a schematic diagram showing an example of the results of temperature detection of the substrate according to the third embodiment. [Figure 12] This is an explanatory diagram of the control according to the third embodiment. [Figure 13] This is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to the fourth embodiment. [Figure 14] This is a schematic diagram showing an example of the measurement results for the thickness of a film on a substrate according to the fourth embodiment. [Modes for carrying out the invention]

[0011] The embodiments described below will be explained with reference to the drawings. Note that the embodiments described below are illustrative, and for example, those skilled in the art may modify the detailed configuration as appropriate without departing from the spirit of the present invention. In the drawings referenced in the following descriptions of embodiments and examples, elements denoted by the same reference numerals have the same function unless otherwise specified. In drawings where multiple identical elements are present, the assignment of reference numerals and their descriptions may be omitted. Furthermore, for the convenience of illustration and explanation, drawings may be schematically represented, and therefore the shape, size, and arrangement of elements shown in the drawings may not strictly correspond to actual objects.

[0012] In the following description, directions are indicated by the XYZ coordinate system, which is a rectangular coordinate system. The X-axis, Y-axis, and Z-axis are perpendicular to each other. Also, the direction of the X-axis is also referred to as the X direction, the direction of the Y-axis as the Y direction, and the direction of the Z-axis as the Z direction. For example, when referring to the plus direction of the X-axis (+X direction), it indicates the same direction as that pointed by the X-axis arrow in the illustrated coordinate system, and when referring to the minus direction of the X-axis (-X direction), it indicates the direction opposite by 180° to the direction pointed by the X-axis arrow in the illustrated coordinate system. Also, when simply referring to the X direction, it indicates a direction parallel to the X-axis regardless of the difference from the direction pointed by the X-axis arrow in the illustration. The same applies to the Y-axis and Z-axis other than the X-axis. In the XYZ coordinate system, the X direction and Y direction are horizontal directions, and the minus direction of the Z-axis is the vertical direction. For example, the plane including the X-axis and Y-axis is expressed as the XY plane. The same applies to the XZ plane and YZ plane.

[0013] Hereinafter, as an example of the liquid, a solution (solution film) will be described. The liquid is preferably a solution containing a solute and a solvent, but may not contain a solute. Also, in the following description, the "solution" may be described as "ink". "Ink" is not limited to a solution containing a recording material for forming characters and images. For example, it may be a solution containing a functional material for forming a functional thin film such as an electrode or an optical filter, or a functional element such as an organic EL element. It may also be a solution containing an insoluble solid component.

[0014] <First Embodiment> FIGS. 1 to 3 are schematic cross-sectional views showing the configuration of a substrate processing apparatus 1 according to the first embodiment. The substrate processing apparatus 1 is a vacuum drying apparatus. The substrate processing apparatus 1 is configured to process a substrate 3 to which a solution film F0 is applied. More specifically, the substrate processing apparatus 1 is configured to perform a drying process of drying the solution film F0 on the substrate 3 to form a dried film.

[0015] The substrate processing apparatus 1 is used in the process of manufacturing an article by processing a substrate 3. For example, the substrate processing apparatus 1 is used in part of the process of manufacturing an organic EL panel having an OLED which is an organic EL element. In the first embodiment, a coating apparatus (not shown) applies a solution onto the substrate 3 to dispose a solution film F0 on the main surface MS of the substrate 3, and the substrate processing apparatus 1 performs a drying process of drying the solution film F0 formed on the main surface MS of the substrate 3 in a reduced-pressure environment, thereby forming a dried film on the main surface MS of the substrate 3, and a firing apparatus (not shown) fires the dried film to form an organic film on the main surface MS of the substrate 3.

[0016] The substrate 3 is, for example, a large substrate for a flat panel display. The substrate 3 is, for example, a glass substrate. In a state where the substrate 3 is conveyed to the substrate processing apparatus 1, the main surface MS of the substrate 3 is parallel to the XY plane, that is, horizontal. In a plan view (viewed in the Z direction perpendicular to the main surface MS of the substrate 3), the main surface MS (outer shape of the substrate 3) is rectangular. The main surface MS of the substrate 3 includes a plurality of pixel regions arranged in a matrix. One pixel region is composed of three sub-pixel regions of RGB. A solution film F0 for forming an organic film is provided in one sub-pixel region. The sub-pixel region is defined by being surrounded by a bank.

[0017] The solution film F0 is composed of, for example, a solution (ink) containing a solute and a solvent for forming an organic film. It is preferable that the solvent contained in the solution film F0 has a property that evaporation is promoted in a reduced-pressure environment lower than atmospheric pressure (1 atm). Evaporation of the solvent is preferably promoted, for example, at a temperature higher than normal temperature (25°C).

[0018] The organic film is, for example, any one of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer of an organic EL (OLED) element . The manufacture of an organic EL element includes a process of forming each organic film such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer on the substrate 3. The solution film F0 is applied to necessary portions on the main surface MS of the substrate 3 by a coating apparatus before the substrate 3 is conveyed to the substrate processing apparatus 1.

[0019] Here, drying the substrate 3 may be expressed as drying the solution film F0 placed on the substrate 3, evaporating the solvent contained in the solution film F0 placed on the substrate 3, or drying the solvent contained in the solution film F0 placed on the substrate 3, but these expressions all mean the same thing. The evaporated solvent is called solvent gas or solvent vapor.

[0020] The substrate processing apparatus 1 comprises a container 2 and a controller 90 that controls the entire substrate processing apparatus 1. The controller 90 is an example of a control unit. The container 2 is an airtight container that defines a sealed space SP0 which is a chamber. The sealed space SP0 is the space inside the container 2 that is surrounded by the container 2.

[0021] Container 2 is equipped with at least one gate valve (not shown). The gate valve is movable between an open position and a closed position. Moving the gate valve to the closed position defines a sealed space SP0, and moving the gate valve to the open position opens the inside of container 2. The substrate 3 to be dried is brought into container 2 from the outside through the gate valve moved to the open position. The dried substrate 3 is then removed from container 2 to the outside through the gate valve moved to the open position. The transport of the substrate 3 is carried out by a transport mechanism (not shown). The transport mechanism is, for example, a robot.

[0022] The substrate processing apparatus 1 further comprises a depressurization mechanism (not shown) for reducing the pressure of a sealed space SP0 inside the container 2. The depressurization mechanism is connected to the container 2. The depressurization mechanism is used to reduce the pressure of the sealed space SP0 to a pressure lower than atmospheric pressure. The depressurization mechanism includes at least one vacuum pump.

[0023] The substrate processing apparatus 1 further comprises a substrate holding section 4 that holds a substrate 3 on which a solution film F0 is applied to the main surface MS. The substrate holding section 4 is located inside the container 2. The substrate 3 is placed on the upper surface (plane) of the substrate holding section 4. The substrate processing apparatus 1 further comprises a temperature control plate 70 capable of adjusting the temperature of the substrate 3 held by the substrate holding section 4. The temperature control plate 70 typically includes a heater for heating the substrate holding section 4, but may also include a cooler for cooling the substrate holding section 4, and the temperature control plate 70 performs at least one of heating and / or cooling on the substrate holding section 4. In this way, the temperature control plate 70 adjusts the temperature of the substrate 3, i.e., the temperature of the solution film F0 on the substrate 3.

[0024] The temperature control plate 70 uniformly or individually controls the temperature of multiple regions of the substrate holding section 4 so that the substrate 3 has a uniform temperature distribution. For example, the temperature control plate 70 controls the temperature so that the temperature difference in each region of the substrate 3 held by the substrate holding section 4 is within 10°C. More preferably, the temperature control plate 70 controls the temperature so that the temperature difference in each region of the substrate 3 held by the substrate holding section 4 is within 5°C. The temperature control plate 70 controls the temperature of the substrate holding section 4 so that the temperature of the substrate 3 is within a predetermined range of 0°C to 100°C. By heating the substrate holding section 4, the drying rate of the solution film F0 placed on the substrate 3 can be improved.

[0025] The substrate processing apparatus 1 further includes a cover 5 that is placed inside the container 2 and covers the substrate 3 held by the substrate holding part 4, in order to reduce unevenness in the drying speed of the solution film F0.

[0026] The cover 5 is a box-shaped member with an open side on the substrate holding portion 4, i.e., the lower end. The cover 5 has a top plate 5a positioned opposite the main surface MS, which is the upper surface of the substrate 3 held by the substrate holding portion 4, and a side wall 5b positioned opposite the side surface SS of the substrate 3 so as to surround the side surface SS of the substrate 3. The side wall 5b is a frame-shaped member, and the top plate 5a is positioned at the upper end of the side wall 5b. Inside the cover 5, an inner space SP2 is defined, enclosed by the top plate 5a and the side wall 5b. The inner space SP2 is the space in which the substrate 3 is housed.

[0027] Multiple openings 44 (see Figures 5(a) to 5(d)) are formed in the top plate 5a. The arrangement and dimensions of each of the multiple openings 44 are determined so that the solution film F0 on the substrate 3 dries uniformly. The opening area per unit area of ​​the cover 5 is called the opening ratio. The cover 5 is configured such that the opening ratio near the edges of the substrate 3 is smaller than the opening ratio near the center of the substrate 3, by adjusting the area of ​​each of the multiple openings 44, or the spacing between the multiple openings 44. The inner space SP2 of the cover 5 communicates with the outer space SP1 of the cover 5 through the multiple openings 44. The outer space SP1 is the space in the sealed space SP0 other than the inner space SP2. The depressurization mechanism depressurizes the inner space SP2 through the multiple openings 44 by depressurizing the outer space SP1. When the depressurization mechanism is operated, the solvent vapor evaporated from the solution film F0 on the substrate 3 flows from the inner space SP2 through the openings 44 to the outer space SP1, and is exhausted from the outer space SP1 through the exhaust port of the container 2. The depressurization mechanism is connected to the exhaust port of container 2 via an exhaust duct.

[0028] The substrate processing apparatus 1 further includes a gas analyzer (not shown) for detecting a specific gas in the inner space SP2. The gas analyzer is a residual gas analyzer (RGA), such as a mass spectrometer. The specific gas detected by the gas analyzer is the gas evaporating from the solution film F0 on the substrate 3, i.e., the gas to be detected. More specifically, the specific gas is solvent vapor.

[0029] The substrate processing apparatus 1 further comprises a gas supply unit that supplies an inert gas to the outer space SP1 and a gas supply unit that supplies an inert gas to the inner space SP2. The inert gas is, for example, nitrogen. The gas supplied by each gas supply unit may be a gas other than an inert gas, as long as it has a different composition from the solvent contained in the solution film F0, for example, clean dry air (air).

[0030] The top plate 5a is an elastically deformable plate. The substrate processing apparatus 1 further includes an adjustment mechanism 6. The adjustment mechanism 6 is a mechanism that can increase or decrease the distance H between the substrate 3 and the top plate 5a relative to a reference distance H0 by elastically deforming the top plate 5a. For example, the part enclosed by the dotted line in Figure 1 is the adjustment mechanism 6. The adjustment mechanism 6 is arranged around the cover 5. The reference distance H0 is the distance between the substrate 3 and the top plate 5a when the top plate 5a is in a flat state.

[0031] The adjustment mechanism 6 is located on the side of the top plate 5a and includes a plurality of holding mechanisms 6a that each hold a plurality of points on the peripheral edge of the top plate 5a, and a plurality of drive mechanisms 6b that allow each of the plurality of holding mechanisms 6a to swing individually. The plurality of holding mechanisms 6a are arranged at intervals along the peripheral edge of the top plate 5a. Each of the plurality of holding mechanisms 6a is supported by the support member 600 so as to be able to swing around the support member 600 or the axial member of the holding mechanism 6a.

[0032] Each drive mechanism 6b includes a support member 601, a cam member 602 that is pivotably supported by the support member 601 and contacts the holding mechanism 6a, and a motor (not shown) that pivots (rotates) the cam member 602. The cam member 602 is, for example, an elliptical plate, and the pivot shaft of the motor is fixed at an eccentric position from the center of the cam member 602. The holding mechanism 6a pivots as the cam member 602 is rotationally driven by the motor.

[0033] Figure 1 shows the top plate 5a in a flat state (H=H0) without elastic deformation. Figure 2 shows the top plate 5a in a state where it has been elastically deformed into a concave shape. Figure 3 shows the top plate 5a in a state where it has been elastically deformed into a convex shape. As shown in Figure 2, the adjustment mechanism 6 causes the top plate 5a to be elastically deformed into a concave shape, making the distance H between the substrate 3 and the top plate 5a smaller than the reference distance H0. Also, as shown in Figure 3, the adjustment mechanism 6 causes the top plate 5a to be elastically deformed into a convex shape, making the distance H between the substrate 3 and the top plate 5a larger than the reference distance H0.

[0034] Furthermore, the substrate processing apparatus 1 also includes a detection unit 8 that detects the state of the substrate 3 held in the substrate holding unit 4. The detection unit 8 detects the temperature of the substrate 3 as the state of the substrate 3. Specifically, the detection unit 8 detects the temperature of multiple locations on the substrate 3, which is temperature-controlled by the temperature control plate 70. The detection unit 8 has multiple temperature sensors 8a that detect the temperature of multiple locations on the substrate 3.

[0035] The controller 90 is configured to perform a drying process to dry the solution film F0 on the substrate 3, and controls each part of the substrate processing apparatus 1 during the drying process. The controller 90 is composed of, for example, a computer. The controller 90 includes a CPU, which is an example of a processor; RAM, which is a temporary storage device; ROM and SSD, which are non-temporary storage devices (recording media); and I / O, which is an interface. The non-temporary storage device stores a control program that causes the CPU of the controller 90 to execute the control of each part of the entire apparatus in the manufacturing process described later. A storage device 91, such as an SSD, is connected to the controller 90. The storage device 91 is an example of a storage unit and is either external to the controller 90 or built into the controller 90.

[0036] In addition to the above-described configuration, the controller 90 having a processor may also be configured by, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with a program installed, or a combination of all or part of these.

[0037] Next, a drying process (substrate processing method), which is part of the manufacturing method of the article according to the first embodiment, will be described. The substrate 3 is brought into the inner space SP2 inside the cover 5 inside the container 2, and a drying process is performed to dry the solution film F0 on the substrate 3, that is, a process to evaporate the solvent of the solution film F0, by controlling the pressure inside the container 2 by the controller 90. The drying process is performed under reduced pressure. The drying process may include multiple drying processes. In each drying process, the controller 90 adjusts the pressure inside the container 2 by controlling the reduced pressure mechanism.

[0038] The drying process will now be explained in detail. First, the controller 90 causes the substrate 3, on which the solution film F0 has been applied to the main surface MS, to be held by the transport mechanism, the transport mechanism to carry the substrate 3 into the container 2, and the transport mechanism to place the substrate 3 on the substrate holding section 4. At this time, the gate valve is in the open position. Then, the controller 90 moves the gate valve from the open position to the closed position.

[0039] Next, the controller 90 controls the adjustment mechanism 6 based on the detection result of the detection unit 8. In this embodiment, the controller 90 determines the position on the top plate 5a where the distance H is increased or decreased relative to the reference distance H0, and the amount by which the distance H is increased or decreased relative to the reference distance H0 at that position, based on the detection result, and controls the adjustment mechanism 6 according to the amount of increase or decrease.

[0040] Figure 4 is a flowchart of the distance H adjustment method according to the first embodiment. The controller 90 acquires temperature T data (detection result) from the detection unit 8 that detects the temperature T at multiple locations on the substrate 3, such as near the center of the substrate 3, the peripheral area, and the corners (step S0). The controller 90 calculates the average value TA of the temperatures T at multiple locations on the substrate 3 (step S1).

[0041] In this embodiment, the controller 90 determines the position in the XY direction of the top plate 5a where the distance H is increased or decreased relative to the reference distance H0, and the amount of increase or decrease ΔH of the distance H relative to the reference distance H0 at that position, based on the difference ΔT of the temperature T of each of the multiple locations on the substrate 3 with respect to the average value TA of the temperatures T of multiple locations on the substrate 3.

[0042] To explain with a specific example, the controller 90 calculates the absolute value TZ of the difference ΔT obtained by subtracting the average value TA from the temperature T of multiple locations on the circuit board 3, and extracts the location with the largest absolute value TZ (step S2). The location with the largest absolute value TZ is designated as the location to adjust the distance H. In other words, the location on the circuit board 3 where the absolute value TZ of the difference ΔT is the largest is the location to adjust the distance H. Furthermore, the position in the XY direction on the top plate 5a that increases or decreases the distance H relative to the reference distance H0 is the position in the XY direction on the top plate 5a that faces the target location on the circuit board 3.

[0043] The distance H in the XY direction on the top plate 5a facing the target area of ​​the substrate 3 can be set by the orientation of the multiple holding mechanisms 6a. Figures 5(a) to 5(d) are explanatory diagrams showing the state of the top plate 5a according to the first embodiment. Figure 5(a) shows the top plate 5a in a flat state. Figures 5(b) to 5(d) show the top plate 5a in a state of elastic deformation from a flat state. The locations where the distance H needs to be adjusted can be set as shown in Figures 5(b) to 5(d) by combining the oscillating holding mechanisms 6a and the non-oscillating holding mechanisms 6a from among the multiple holding mechanisms 6a provided on the periphery of the top plate 5a.

[0044] The controller 90 calculates the increase or decrease ΔD of the drying rate D of the solution film F0 at the target location on the substrate 3 from the difference ΔT at which the absolute value TZ is maximized (step S3). In this embodiment, Gardner's drying rate equation is used as the model equation for calculating the increase or decrease ΔD, but it is not limited to this.

[0045] Figure 6 is an explanatory diagram showing the correlation curve L between drying speed D and distance H according to the first embodiment. The correlation curve L is an example of the correlation between drying speed D and distance H. The data of the correlation curve L is stored in a storage device 91 such as an SSD.

[0046] The controller 90 uses a correlation curve L between the drying rate D and the distance H to determine the increase or decrease in distance H ΔH from the increase or decrease in the drying rate D of the solution film F0 at the target location on the substrate 3 (step S4). The correlation curve L shown in Figure 6 may be obtained from the results of analysis using the finite element method, or from experimental results using an experimental machine, etc.

[0047] Where the temperature T of the substrate 3 is higher than the average value TA, the drying rate D of the solution film F0 is too fast. Therefore, to make the drying rate D uniform, the distance H is reduced from the reference distance H0 by an amount of increase or decrease ΔH. That is, the controller 90 uses the holding mechanism 6a and the drive mechanism 6b of the adjustment mechanism 6 to elastically deform the top plate 5a as shown in Figure 2, thereby reducing the distance H from the reference distance H0 by an amount of increase or decrease ΔH.

[0048] Conversely, in areas where the temperature T of the substrate 3 is lower than the average value TA, the drying rate D of the solution film F0 is too slow. Therefore, to make the drying rate D uniform, the distance H is increased by an adjustment amount ΔH from the reference distance H0. That is, the controller 90 uses the holding mechanism 6a and the drive mechanism 6b of the adjustment mechanism 6 to elastically deform the top plate 5a as shown in Figure 3, thereby increasing the distance H by an adjustment amount ΔH.

[0049] Specifically, the difference ΔT obtained by subtracting the average value TA from the temperature T of multiple locations on substrate 3 is used to calculate the increase or decrease ΔD of the drying rate D from Gardner's drying rate formula. The drying rate D at the reference distance H0 is D0, as shown by the correlation curve L in Figure 6. At locations where the temperature T of substrate 3 is higher than the average value TA by a difference ΔT, the drying rate D increases by the increase or decrease ΔD, becoming D1 (=D0+ΔD). Therefore, the distance H at locations where the temperature T is higher by a difference ΔT, as shown by the correlation curve L in Figure 6, corresponds to H1, which is lower than the reference distance H0. Thus, the difference ΔH between H0 and H1 is the adjustment amount ΔH, and by increasing the distance H at locations where the temperature is higher by a difference ΔT, the drying rate D1 can be made to the drying rate D0 at the reference distance H0. Conversely, at locations where the temperature T of substrate 3 is lower than the average value TA by a difference ΔT, the drying rate D decreases by the increase or decrease ΔD, becoming D2 (=D0-ΔD). As shown in the correlation curve L in Figure 6, the distance H at a point where the difference ΔT is lower corresponds to H2, which is higher than the reference distance H0. By reducing the distance H by the difference ΔH between H0 and H2, the drying rate D2 can be made to the drying rate D0 at the reference distance H0.

[0050] Next, the controller 90 executes each drying process in the drying step. Figure 7 is a graph showing an example of pressure control in the drying step according to the first embodiment. In Figure 7, the horizontal axis represents time, and the vertical axis represents the pressure in the sealed space SP0. Pressure control includes control of the depressurization mechanism. The pressure in the sealed space SP0 inside the container 2 can be detected by a pressure gauge (not shown). In the example in Figure 7, the multiple drying processes are four drying processes DP1 to DP4, and the depressurization mechanism and each gas supply unit are controlled in each drying process DP1 to DP4. The number of drying processes is not limited to four.

[0051] In drying process DP1, the controller 90 controls the depressurization mechanism so that the pressure in the sealed space SP0 inside the container 2 decreases from atmospheric pressure (1 atmosphere) to a first pressure P1. As a result, the inside of the container 2 is reduced to a first pressure P1. Drying process DP1 is a process that reduces the pressure from atmospheric pressure to a first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than the vapor pressure (saturated vapor pressure) of the solvent contained in the solution film F0.

[0052] After the pressure in the sealed space SP0 reaches the first pressure P1, the controller 90 controls the amount of gas supplied to the depressurization mechanism and the outer space SP1 during the drying process DP2 so that the pressure in the sealed space SP0 is maintained at the first pressure P1. That is, the controller 90 operates the depressurization mechanism to dry the substrate 3 in an environment of the first pressure P1.

[0053] The internal pressure of container 2 can be determined by adjusting the balance between the amount of gas exhausted by the depressurization mechanism and the amount of inert gas supplied. In addition, during drying processes DP1 and DP2, the supply of inert gas to the inner space SP2 is stopped.

[0054] In order to uniformly adjust the pressure distribution around the substrate 3, that is, to uniformly adjust the evaporation rate of the solvent in the solution film F0 on the substrate 3, in the first embodiment, the substrate 3 is surrounded by a cover 5. The distance H between the top plate 5a and the substrate 3 is adjusted by elastically deforming the top plate 5a with the adjustment mechanism 6. This ensures that the drying rate of the solution film F0 is uniform. When the solvent evaporates from the solution film F0, the solvent vapor temporarily accumulates in the inner space SP2 surrounded by the cover 5. The cover 5 has a plurality of openings 44 that connect the inner space SP2 and the outer space SP1. Through these openings 44, the solvent vapor flows from the inner space SP2 to the outer space SP1. The solvent vapor that has flowed into the outer space SP1 is exhausted from the container 2 via an exhaust duct (not shown) by the operation of a depressurization mechanism.

[0055] Furthermore, in drying treatment DP2, the pressure in the inner space SP2 is maintained at the first pressure P1, ensuring uniform drying of the solution film F0. That is, the solution film F0 can be dried in such a way that the thickness of the resulting dried film is uniform. Therefore, the surface of the dried film obtained by drying the solution film F0 can be made flat. Additionally, the size and number of openings 44 are adjusted so that the pressure distribution within the inner space SP2 is uniform while maintaining a constant pressure. This allows for fine-tuning of the pressure in the inner space SP2, enabling more effective and uniform drying of the solution film F0. The shape of the solution film F0, from which most of the solvent has evaporated, is roughly determined by drying treatment DP2.

[0056] After drying process DP2, in drying process DP3, the controller 90 controls the amount of gas exhausted from the depressurization mechanism and the amount of gas supplied to the inner space SP2 so that the pressure in the sealed space SP0 inside the container 2 decreases from the first pressure P1 to the second pressure P2. As a result, the inside of the container 2 is reduced to the second pressure P2. Drying process DP3 is the process of reducing the pressure from the first pressure P1 to the second pressure P2. The second pressure P2 is a pressure lower than the first pressure P1 and is a pressure lower than the vapor pressure of the solvent (a predetermined pressure). Then, in drying process DP4, after the pressure in the sealed space SP0 inside the container 2 reaches the second pressure P2, the controller 90 controls the amount of gas exhausted from the depressurization mechanism and the amount of gas supplied to the inner space SP2 so that the pressure in the sealed space SP0 is maintained at the second pressure P2. That is, the controller 90 operates the depressurization mechanism to dry the substrate 3 in an environment of the second pressure P2. Drying process DP4 is an example of the second drying process.

[0057] In the drying process DP4, even when the depressurization mechanism is operating, the pressure in the inner space SP2 of the cover 5 can be maintained at the second pressure P2 by supplying inert gas to SP2. That is, the internal pressure of the container 2 can be determined by adjusting the balance between the amount of gas exhausted by the depressurization mechanism and the amount of inert gas supplied. This shortens the time required to remove solvent adhering to the inner surfaces of the container 2 and cover 5. Furthermore, the inert gas supplied to the inner space SP2 can also function as a means of discharging solvent vapor accumulated in the inner space SP2 to the outer space SP1. In addition, in the drying process DP4, the outer space SP1 may also be supplied with inert gas.

[0058] From drying process DP3 onward, and especially during drying process DP4, the internal pressure of container 2 is reduced to a second pressure P2 to further dry the solution film F0 on substrate 3, and the solvent adhering to the inner surface of cover 5 is removed. In drying process DP4, the removal of the solvent adhering to the inner surface of cover 5 returns the state of the sealed space SP0 to the state before drying process DP1, preventing any residual solvent from affecting the drying process of the next substrate 3 to be introduced.

[0059] To quickly dry the solution film F0 on the substrate 3, it is preferable to use low pressure conditions. In the first embodiment, drying is performed by a plurality of drying processes DP1 to DP4 with different pressure conditions. This makes it possible to make the thickness of the dried film obtained by drying the solution film F0 uniform.

[0060] The controller 90 determines whether all drying processes are complete, i.e., whether the drying process is finished. Whether each drying process is complete may be determined based on a preset processing time, or based on the output value of the gas analyzer.

[0061] When all drying processes are complete, the controller 90 moves the gate valve from the closed position to the open position and controls the transport mechanism so that the substrate 3 held in the substrate holding section 4 is transported out of the container 2.

[0062] In the first embodiment, drying is performed by multiple drying processes DP1 to DP4 with different pressure conditions, thereby achieving both a high drying rate for the solution film F0 and uniformity of the thickness of the dried film, i.e., the functional film. Specifically, after the approximate film shape is determined in drying process DP2, the solution film F0 is dried at high speed in drying processes DP3 and later, thereby forming a film with uniform thickness.

[0063] When drying the next substrate, the distance H may be readjusted for that substrate as well. However, if the next substrate is the same size as substrate 3, the distance H does not need to be readjusted.

[0064] The top plate 5a of the cover 5 is thinner in the center than in the periphery. In other words, the periphery of the top plate 5a is thicker than in the center. This thicker portion is held by the retaining mechanism 6a.

[0065] The top plate 5a includes an expandable material, preferably rubber, elastomer, or latex. However, it is not limited to these materials as long as it is expandable in the in-plane direction.

[0066] As described above, according to the first embodiment, the adjustment mechanism 6 can increase or decrease the distance H between the substrate 3 and the top plate 5a by deforming the top plate 5a by oscillating one of the plurality of holding mechanisms 6a that hold the top plate 5a with the drive mechanism 6b. Therefore, the drying speed of the solution film F0 can be made uniform in the in-plane direction of the substrate 3, and the thickness of the dried film can be made uniform in the in-plane direction of the substrate 3.

[0067] Furthermore, the adjustment mechanism 6 fixes the top plate 5a without swinging the holding mechanism 6a, and applies a restraining force to the top plate 5a, thereby changing the position at which the distance H between the top plate 5a and the substrate 3 can be increased or decreased. This makes it possible to adjust the distance H at a desired position on the top plate 5a. As a result, the drying rate of the solution film F0 in the in-plane direction of the substrate 3 can be made more uniform, and the thickness of the dried film in the in-plane direction of the substrate 3 can be made more uniform.

[0068] Note that the number and position of the holding mechanisms 6a are not limited to the example shown in Figure 1, and the number may be increased. This makes it possible to deform the top plate 5a with high precision and to achieve high-precision uniformity of the drying speed.

[0069] The temperature sensor 8a for detecting the temperature of the substrate 3 may be either a contact type or a non-contact type. If the temperature sensor 8a is a contact type, it is preferable that the temperature sensor 8a be placed in the substrate holding part 4, and the temperature sensor 8a may be in contact with the back surface of the substrate 3 to detect the temperature of the back surface of the substrate 3. If the temperature sensor 8a is a non-contact type, it is preferable that the temperature sensor 8a be placed above the substrate 3 or in the substrate holding part 4, and the temperature sensor 8a may be detected by irradiation with infrared rays to detect the temperature of the surface of the substrate 3.

[0070] The number of temperature sensors 8a should be appropriate to the extent that it reduces the unevenness of the substrate size and drying speed. The detection unit 8 may also be a thermoviewer or the like that can detect the overall temperature distribution of the substrate 3 non-contact.

[0071] <Second Embodiment> A second embodiment will now be described. Hereinafter, elements denoted by the same reference numerals as those in the first embodiment will have substantially the same configuration and function as those described in the first embodiment unless otherwise specified. The differences from the first embodiment will be the main focus of this description.

[0072] In the second embodiment, the detection unit 8 detects the thickness of the solution film F0 on the substrate 3 as the state of the substrate 3. The means for detecting the solution film F0 on the substrate 3 may be either transmission-type or reflection-type. The detection unit 8 may be positioned above or below the substrate 3. When the detection unit 8 is positioned below the substrate 3, it may be positioned on the substrate holding unit 4, similar to the temperature sensor 8a. When the detection unit 8 is positioned above the substrate 3, it is preferable to detect before the cover 5 is placed above the substrate 3, but it is not limited to this, and may be performed before the substrate 3 is placed in the container 2.

[0073] The drying process (substrate processing method), which is part of the manufacturing method of the article according to the second embodiment, will now be described. The substrate 3 is brought into the inner space SP2 inside the cover 5 inside the container 2, and a drying process is performed to dry the solution film F0 on the substrate 3, that is, a process to evaporate the solvent of the solution film F0, by controlling the pressure inside the container 2 by the controller 90. The drying process is performed under reduced pressure. The drying process may include multiple drying processes. In each drying process, the controller 90 adjusts the pressure inside the container 2 by controlling the reduced pressure mechanism.

[0074] The drying process will now be explained in detail. First, the controller 90 causes the substrate 3, on which the solution film F0 has been applied to the main surface MS, to be held by the transport mechanism, the transport mechanism to carry the substrate 3 into the container 2, and the transport mechanism to place the substrate 3 on the substrate holding section 4. At this time, the gate valve is in the open position. Then, the controller 90 moves the gate valve from the open position to the closed position.

[0075] Next, the controller 90 controls the adjustment mechanism 6 based on the detection result of the detection unit 8. In this embodiment, the controller 90 determines the position on the top plate 5a where the distance H is increased or decreased relative to the reference distance H0, and the amount by which the distance H is increased or decreased relative to the reference distance H0 at that position, based on the detection result, and controls the adjustment mechanism 6 according to the amount of increase or decrease.

[0076] Figure 8 is a flowchart of the distance H adjustment method according to the second embodiment. The controller 90 acquires data (detection result) of the thickness F of the solution film F0 from the detection unit 8 which detects the thickness F of the solution film F0 at multiple locations on the substrate 3, such as near the center of the substrate 3, the peripheral area, and the corners (step S0). The controller 90 calculates the average value FA of the thickness F of the solution film F0 on multiple locations on the substrate 3 (step S1).

[0077] In this embodiment, the controller 90 determines the position in the XY direction on the top plate 5a where the distance H is increased or decreased relative to the reference distance H0, and the amount of increase or decrease ΔH of the distance H relative to the reference distance H0 at that position, based on the difference ΔF of the thickness F of the solution film F0 at each of the multiple locations on the substrate 3 relative to the average value FA of the thickness F of the solution film F0 on the substrate 3.

[0078] To explain with a specific example, the controller 90 calculates the absolute value FZ of the difference ΔF obtained by subtracting the average value FA from the thickness F of the solution film F0 at each of the multiple locations on the substrate 3, and extracts the location with the largest absolute value FZ (step S2). The location with the largest absolute value FZ is designated as the location to adjust the distance H. In other words, the location on the substrate 3 where the absolute value FZ of the difference ΔF is the largest is the location to adjust the distance H. Furthermore, the position in the XY direction on the top plate 5a that increases or decreases the distance H relative to the reference distance H0 is the position in the XY direction on the top plate 5a facing the target location on the substrate 3.

[0079] The distance H in the XY direction on the top plate 5a facing the target area of ​​the substrate 3 can be set by the orientation of the multiple holding mechanisms 6a, as described in the first embodiment above.

[0080] The controller 90 calculates the increase or decrease ΔD of the drying rate D of the solution film F0 at the target location on the substrate 3 from the difference ΔF at which the absolute value FZ is maximized (step S3). In this embodiment, Gardner's drying rate equation is used as the model equation for calculating the increase or decrease ΔD, but it is not limited to this.

[0081] Similar to the first embodiment, the controller 90 uses the correlation curve L between drying rate D and distance H shown in Figure 6 to determine the increase or decrease in distance H ΔH from the increase or decrease in the drying rate D of the solution film F0 at the target location on the substrate 3 (step S4).

[0082] In areas where the thickness F of the solution film F0 on the substrate 3 is thinner than the average value FA, the drying rate D of the solution film F0 is too fast. Therefore, to make the drying rate D uniform, the distance H is reduced from the reference distance H0 by an amount of increase or decrease ΔH. That is, the controller 90 uses the holding mechanism 6a and the drive mechanism 6b of the adjustment mechanism 6 to elastically deform the top plate 5a as shown in Figure 2, thereby reducing the distance H from the reference distance H0 by an amount of increase or decrease ΔH.

[0083] Conversely, in areas where the thickness F of the solution film F0 on the substrate 3 is thicker than the average value FA, the drying rate D of the solution film F0 is too slow. Therefore, to make the drying rate D uniform, the distance H is increased by an adjustment amount ΔH from the reference distance H0. That is, the controller 90 uses the holding mechanism 6a and the drive mechanism 6b of the adjustment mechanism 6 to elastically deform the top plate 5a as shown in Figure 3, thereby increasing the distance H by an increase or decrease amount ΔH.

[0084] Next, the controller 90 executes each drying process DP1 to DP4 of the drying process shown in Figure 7, as described in the first embodiment.

[0085] In the second embodiment as well, the substrate 3 is surrounded by the cover 5. The distance H between the top plate 5a and the substrate 3 is adjusted by elastically deforming the top plate 5a with the adjustment mechanism 6. This ensures that the drying rate of the solution film F0 is uniform during the drying process DP2.

[0086] <Third Embodiment> A third embodiment will now be described. Hereinafter, elements denoted by reference numerals common to the first or second embodiment will have substantially the same configuration and function as those described in the first or second embodiment unless otherwise specified. The differences from the first and second embodiments will be primarily described.

[0087] Figure 9 is an explanatory diagram of a part of the substrate processing apparatus 1B of the third embodiment, and Figure 10 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus 1B according to the third embodiment. The substrate processing apparatus 1B of the third embodiment has multiple sets of top plates and adjustment mechanisms instead of the single top plate 5a shown in Figure 1. The controller 90 then individually controls each of the multiple sets of adjustment mechanisms.

[0088] For example, the substrate processing apparatus 1B includes multiple top plates 51-56 instead of the top plate 5a shown in Figure 1. Also, the substrate processing apparatus 1B of the third embodiment includes multiple adjustment mechanisms 61-66 instead of the adjustment mechanism 6. That is, the substrate processing apparatus 1B includes sets of top plate 51 and adjustment mechanism 61, top plate 52 and adjustment mechanism 62, top plate 53 and adjustment mechanism 63, top plate 54 and adjustment mechanism 64, top plate 55 and adjustment mechanism 65, and top plate 56 and adjustment mechanism 66. The controller 90 controls each of the adjustment mechanisms 61-66 individually. The multiple top plates 51-56 are arranged, for example, in a matrix. The multiple top plates 51-56 may or may not be connected to each other.

[0089] Since the adjustment mechanisms 62 to 66 have the same configuration as adjustment mechanism 61, a description of the configuration of adjustment mechanisms 62 to 66 will be omitted. Adjustment mechanism 61 includes a holding mechanism 61a that holds the outer edge of the top plate 51, and a drive mechanism 61b that can swing the holding mechanism 61a. The holding mechanism 61a has the same configuration as the holding mechanism 6a described in the first embodiment, and the drive mechanism 61b has the same configuration as the drive mechanism 6b described in the first embodiment.

[0090] With the substrate 3 placed on the substrate holding section 4 inside the container 2, the temperature T at multiple locations on the substrate 3 is detected by multiple temperature sensors 8a located beneath the substrate 3. Figure 11 is a schematic diagram showing an example of the temperature detection results of the substrate 3 according to the third embodiment. Numerical examples will be given below, but the explanation is not limited to the numerical examples exemplified below.

[0091] In the example shown in Figure 11, the difference ΔT obtained by subtracting the average value TA from the temperature T at location 301 of substrate 3 is +2°C, and the difference ΔT obtained by subtracting the average value TA from the temperature T at location 302 of substrate 3 is -2°C. In this case, the reference distance H0 between the top plates 51-56 positioned above substrate 3 and substrate 3 is set to 50 mm.

[0092] In steps S3-S4 of the flowchart shown in Figure 4, the increase / decrease amount ΔH of distance H was calculated based on the correlation curve L in Figure 6. As a result, the distance H at point 301 where the difference ΔT is +2℃ is found to be 36.4mm, which is a decrease of 13.6mm from the reference distance H0 of 50mm, and the distance H at point 302 where the difference ΔT is -2℃ is found to be 63.6mm, which is an increase / decrease amount ΔH from the reference distance H0 of 50mm.

[0093] Of the multiple top plates 51 to 56 shown in Figure 9, top plate 51 is opposite to location 301 on the substrate 3, and top plate 54 is opposite to location 302 on the substrate 3. By changing the distance H between location 301 on the substrate 3 and top plate 51, and the distance H between location 302 on the substrate 3 and top plate 54 from the reference distance H0, while keeping the distance H between locations other than locations 301 and 302 on the substrate 3 and top plates 52, 53, 55, and 56 from the reference distance H0, the drying rate D of the solution film F0 on the substrate 3 can be made uniform.

[0094] Figure 12 is an explanatory diagram of the control according to the third embodiment. As shown in Figure 12, on the top plate 54 provided above the point 301 where the difference ΔT is +2℃, the distance H is adjusted from 50mm to 36.4mm by elastically deforming a position to the right of the center into a concave shape. In this case, of the multiple holding mechanisms of the adjustment mechanism 64, only the holding mechanism 64aW is swung upward as indicated by the arrow, while the other holding mechanisms are not moved, thereby making the position to the right of the center into a concave shape.

[0095] Similarly, on the top plate 51 located above the point 302 where the difference ΔT is -2℃, the distance H is adjusted from 50mm to 63.6mm by elastically deforming a position slightly to the left and front of the center into a convex shape. In this case, of the multiple holding mechanisms of the adjustment mechanism 61, only two holding mechanisms, 61aE and 61aS, are swung downward as indicated by the arrows, while the other holding mechanisms are not moved, thereby creating a convex shape at the position slightly to the left and front.

[0096] By performing the drying process under the above conditions, the drying rate D of the solution film F0 due to in-plane temperature T variations in the substrate 3 can be made uniform, and the thickness of the dried film after drying the solution film F0 can be made uniform.

[0097] <Fourth Embodiment> A fourth embodiment will now be described. Hereinafter, elements denoted by the same reference numerals as those in the first to third embodiments will have substantially the same configuration and function as those described in the first to third embodiments unless otherwise specified. The differences from the first to third embodiments will be primarily described.

[0098] Figure 13 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus 1C according to the fourth embodiment. The substrate processing apparatus 1C of the fourth embodiment omits the temperature sensor 8a shown in Figure 10. The controller 90 individually controls each of the multiple sets of adjustment mechanisms 61 to 66. The arrangement of the top plates 51 to 56 is as described in the third embodiment.

[0099] In the fourth embodiment, after the drying process is performed by the substrate processing apparatus 1C, the thickness F of the solution film F0 at multiple locations on the substrate 3 is measured using a film thickness measuring instrument (not shown). It is particularly preferable to measure the peripheral and central locations on the substrate 3, but this is not limited to that. Figure 14 is a schematic diagram showing an example of the measurement results of the film thickness on the substrate 3 according to the fourth embodiment. Numerical examples will be given below, but the numerical examples are not limited to those exemplified below.

[0100] As a result of measuring the film thickness at multiple locations on substrate 3, in the example shown in Figure 14, the difference ΔFA obtained by subtracting the average value FA from the thickness F of the solution film F0 at location 311 on substrate 3 was -10 nm, and the difference ΔFA obtained by subtracting the average value FA from the thickness F of the solution film F0 at location 312 on substrate 3 was +10 nm.

[0101] The thickness F of the solution film F0 tends to be thinner than the average value FA in areas where the drying rate D of the solution film F0 is slow, and thicker than the average value FA in areas where the drying rate D of the solution film F0 is fast. Therefore, it is determined that the drying rate D of the solution film F0 is slow in area 311, and slow in area 312.

[0102] In steps S3-S4 of the flowchart shown in Figure 8, the difference ΔFA is obtained by subtracting the average value FA from the thickness F of the solution film F0 from the analysis results of the finite element method. From the difference ΔFA, the increase or decrease ΔD of the drying rate D at locations 311 and 312 is calculated, and the increase or decrease ΔH of the distance H is calculated based on the correlation curve L in Figure 6. As a result, the distance H at location 311 is found to be 36.4 mm, which is a decrease of 13.6 mm from the reference distance H0 of 50 mm, and the distance H at location 312 is found to be 63.6 mm, which is a decrease of 13.6 mm from the reference distance H0 of 50 mm.

[0103] Of the multiple top plates 51 to 56 shown in Figure 9, top plate 51 is opposite to location 311 on the substrate 3, and top plate 54 is opposite to location 312 on the substrate 3. By changing the distance H between location 311 on the substrate 3 and top plate 51, and the distance H between location 302 on the substrate 3 and top plate 54 from the reference distance H0, while keeping the distance H between locations other than 301 and 302 on the substrate 3 and top plates 52, 53, 55, and 56 from the reference distance H0, the drying rate D of the solution film F0 on the substrate 3 can be made uniform.

[0104] Therefore, as shown in Figure 12, the distance H is adjusted from 50 mm to 36.4 mm by elastically deforming the top plate 54, which is located above the point 311 where the difference ΔF is -10 nm, into a concave shape at a position slightly to the right of the center. In this case, of the multiple holding mechanisms of the adjustment mechanism 64, only the holding mechanism 64aW is swung upward as indicated by the arrow, while the other gripping mechanisms are not moved, thereby creating a concave shape at a position slightly to the right of the center.

[0105] Similarly, on the top plate 51 located above the point 312 where the difference ΔF is +10 nm, the distance H is adjusted from 50 mm to 63.6 mm by elastically deforming a position slightly to the left and front of the center into a convex shape. In this case, of the multiple holding mechanisms of the adjustment mechanism 61, only the holding mechanism 61aE and the holding mechanism 61aS are swung downward as indicated by the arrows, while the other gripping mechanisms are not moved, thereby making the position slightly to the left and front into a convex shape.

[0106] By performing the drying process under the above conditions, the drying rate D of the solution film F0 due to in-plane temperature T variations in the substrate 3 can be made uniform, and the thickness of the dried film after drying the solution film F0 can be made uniform.

[0107] In the fourth embodiment, the thickness F of the solution film F0 was measured using a film thickness measuring device (not shown) placed outside the container 2. However, the embodiment is not limited to this, and the film thickness measuring device (not shown) may be placed inside the container 2, or inside the substrate holding part 4.

[0108] <Embodiment for manufacturing an article> The method for manufacturing an article according to the embodiments of this disclosure is suitable for manufacturing articles such as organic EL (OLED) panels using a substrate processing apparatus 1. The method for manufacturing an article according to this embodiment includes a step of obtaining a coated substrate by arranging or coating a solution film (a solution containing a solute and a solvent for forming an organic film) on the main surface of a substrate by printing using an inkjet printing apparatus or the like (coating step). It also includes a step of drying the solution film on the coated substrate using the substrate processing apparatus 1 to obtain a dried substrate with a dried film formed on it (drying step). Furthermore, this manufacturing method includes other well-known steps (firing, cooling, dehumidification, dry cleaning, electrode formation, sealing film formation, etc.). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0109] <Other variations> This disclosure is not limited to the embodiments described above, and many modifications are possible within the technical concept of this disclosure. Furthermore, the effects described in these embodiments are merely a list of the most preferred effects and are not limited to this disclosure.

[0110] The above disclosure of embodiments includes the following sections.

[0111] (Section 1) Container and A substrate holding portion is provided inside the container and holds a substrate having a main surface on which liquid is provided. A top plate having multiple openings and positioned opposite the main surface of the substrate, The device includes an adjustment mechanism that allows the distance between the substrate and the top plate to be increased or decreased relative to a reference distance by elastically deforming the top plate. A substrate processing apparatus characterized by the following:

[0112] (Section 2) The aforementioned reference distance is the distance between the substrate and the top plate when the top plate is in a flat state. The substrate processing apparatus according to item 1, characterized in that

[0113] (Section 3) A detection unit for detecting the state of the substrate, The system further comprises a control unit that controls the adjustment mechanism based on the detection result of the detection unit, A substrate processing apparatus according to item 1 or 2, characterized in that

[0114] (Section 4) The control unit determines, based on the detection result, the position on the top plate where the distance is increased or decreased relative to the reference distance, and the amount by which the distance is increased or decreased relative to the reference distance at that position, and controls the adjustment mechanism according to the amount of increase or decrease. The substrate processing apparatus according to item 3, characterized in that

[0115] (Section 5) The detection unit detects the temperature of the substrate as the state of the substrate. The substrate processing apparatus according to item 4, characterized in that

[0116] (Section 6) The detection unit detects the temperature at multiple locations on the substrate, The control unit determines, based on the difference between the average temperature of the multiple locations and the temperature of each of the multiple locations, the position on the top plate where the distance is increased or decreased relative to the reference distance, and the amount by which the distance is increased or decreased relative to the reference distance at that position. The substrate processing apparatus according to item 5, characterized in that

[0117] (Section 7) The substrate holding portion includes a temperature control plate capable of adjusting the temperature of the substrate, The detection unit detects the temperature of the multiple locations on the substrate whose temperature has been adjusted by the temperature control plate. The substrate processing apparatus according to item 6, characterized in that

[0118] (Section 8) The target location is the location among the multiple locations on the substrate where the absolute value of the difference is the largest. The position of the top plate that increases or decreases the aforementioned distance relative to the reference distance is the position of the top plate facing the target location. A substrate processing apparatus according to item 6 or 7, characterized by the features described therein.

[0119] (Section 9) It further includes a memory unit that stores the correlation between drying speed and distance. The control unit calculates the increase or decrease in the drying rate of the liquid at the target location from the difference that maximizes the absolute value, and uses the correlation to determine the increase or decrease in the distance from the increase or decrease in the drying rate of the liquid at the target location. The substrate processing apparatus according to item 8, characterized in that

[0120] (Section 10) The detection unit detects the thickness of the liquid on the substrate as the state of the substrate. The substrate processing apparatus according to item 4, characterized in that

[0121] (Section 11) The detection unit detects the thickness of liquid at multiple locations on the substrate, The control unit determines the position of the top plate to increase or decrease the distance relative to the reference distance, based on the difference between the thickness of each liquid at the plurality of locations and the average value of the liquid thicknesses at the plurality of locations. A substrate processing apparatus according to item 10, characterized in that

[0122] (Section 12) The target location is the location among the multiple locations on the substrate where the absolute value of the difference is the largest. The position on the top plate that increases or decreases the aforementioned distance relative to the reference distance is the position on the top plate facing the target location. A substrate processing apparatus according to item 11, characterized in that

[0123] (Section 13) It further includes a memory unit that stores the correlation between drying speed and distance. The control unit calculates the increase or decrease in the drying rate of the liquid at the target location from the difference that maximizes the absolute value, and uses the correlation to determine the increase or decrease in the distance from the increase or decrease in the drying rate of the liquid at the target location. A substrate processing apparatus according to item 12, characterized in that

[0124] (Section 14) The system has multiple sets of the aforementioned top plate and adjustment mechanism, The control unit individually controls each of the adjustment mechanisms in the plurality of sets. A substrate processing apparatus according to any one of claims 4 to 13, characterized in that

[0125] (Section 15) The aforementioned tabletop includes an expandable material, and the said material is rubber, elastomer, or latex. A substrate processing apparatus according to any one of claims 1 to 14, characterized in that

[0126] (Section 16) The adjustment mechanism is, Multiple holding mechanisms that each hold multiple locations on the peripheral edge of the top plate, The plurality of holding mechanisms are each individually pivotable by a plurality of drive mechanisms, A substrate processing apparatus according to any one of claims 1 to 15, characterized in that

[0127] (Section 17) The top plate is formed with a thinner central portion compared to the peripheral portion. A substrate processing apparatus according to item 16, characterized in that

[0128] (Section 18) Place the liquid on the main surface of the substrate, Using a substrate processing apparatus described in any one of items 1 to 17, the liquid placed on the main surface of the substrate is dried. A method for manufacturing an article, characterized by the following: [Explanation of symbols]

[0129] F0...Solution film (liquid), H...Distance, H0...Reference distance, 1...Substrate processing device, 2...Container, 3...Substrate, 4...Substrate holder, 5a...Top plate, 6...Adjustment mechanism, 44...Opening

Claims

1. Container and A substrate holding portion is provided inside the container and holds a substrate having a main surface on which liquid is provided. A top plate having multiple openings and positioned opposite the main surface of the substrate, The device includes an adjustment mechanism that allows the distance between the substrate and the top plate to be increased or decreased relative to a reference distance by elastically deforming the top plate. A substrate processing apparatus characterized by the following:

2. The aforementioned reference distance is the distance between the substrate and the top plate when the top plate is in a flat state. The substrate processing apparatus according to claim 1.

3. A detection unit for detecting the state of the substrate, The system further comprises a control unit that controls the adjustment mechanism based on the detection result of the detection unit, The substrate processing apparatus according to claim 1.

4. The control unit determines, based on the detection result, the position on the top plate where the distance is increased or decreased relative to the reference distance, and the amount by which the distance is increased or decreased relative to the reference distance at that position, and controls the adjustment mechanism according to the amount of increase or decrease. The substrate processing apparatus according to claim 3.

5. The detection unit detects the temperature of the substrate as the state of the substrate. The substrate processing apparatus according to feature 4.

6. The detection unit detects the temperature at multiple locations on the substrate, The control unit determines, based on the difference between the average temperature of the multiple locations and the temperature of each of the multiple locations, the position on the top plate where the distance is increased or decreased relative to the reference distance, and the amount by which the distance is increased or decreased relative to the reference distance at that position. The substrate processing apparatus according to claim 5.

7. The substrate holding portion includes a temperature control plate capable of adjusting the temperature of the substrate, The detection unit detects the temperature of the multiple locations on the substrate whose temperature has been adjusted by the temperature control plate. The substrate processing apparatus according to claim 6.

8. The target location is the location among the multiple locations on the substrate where the absolute value of the difference is the largest. The position of the top plate that increases or decreases the aforementioned distance relative to the reference distance is the position of the top plate facing the target location. The substrate processing apparatus according to claim 6.

9. It further includes a memory unit that stores the correlation between drying speed and distance. The control unit calculates the increase or decrease in the drying rate of the liquid at the target location from the difference that maximizes the absolute value, and uses the correlation to determine the increase or decrease in the distance from the increase or decrease in the drying rate of the liquid at the target location. The substrate processing apparatus according to feature 8.

10. The detection unit detects the thickness of the liquid on the substrate as the state of the substrate. The substrate processing apparatus according to feature 4.

11. The detection unit detects the thickness of liquid at multiple locations on the substrate, The control unit determines the position of the top plate to increase or decrease the distance relative to the reference distance, based on the difference between the thickness of each liquid at the plurality of locations and the average value of the liquid thicknesses at the plurality of locations. The substrate processing apparatus according to feature 10.

12. The target location is the location among the multiple locations on the substrate where the absolute value of the difference is the largest. The position on the top plate that increases or decreases the aforementioned distance relative to the reference distance is the position on the top plate facing the target location. The substrate processing apparatus according to feature 11.

13. It further includes a memory unit that stores the correlation between drying speed and distance. The control unit calculates the increase or decrease in the drying rate of the liquid at the target location from the difference that maximizes the absolute value, and uses the correlation to determine the increase or decrease in the distance from the increase or decrease in the drying rate of the liquid at the target location. The substrate processing apparatus according to feature 12.

14. The system has multiple sets of the aforementioned top plate and adjustment mechanism, The control unit individually controls each of the adjustment mechanisms in the plurality of sets. The substrate processing apparatus according to feature 4.

15. The aforementioned tabletop includes an expandable material, and the said material is rubber, elastomer, or latex. The substrate processing apparatus according to claim 1.

16. The adjustment mechanism is, Multiple holding mechanisms that each hold multiple locations on the peripheral edge of the top plate, The plurality of holding mechanisms are each individually pivotable by a plurality of drive mechanisms, The substrate processing apparatus according to claim 1.

17. The top plate is formed with a thinner central portion compared to the peripheral portion. The substrate processing apparatus according to claim 16.

18. Place the liquid on the main surface of the substrate, Using a substrate processing apparatus according to any one of claims 1 to 17, a liquid placed on the main surface of the substrate is dried. A method for manufacturing an article characterized by the following:

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