Manufacturing method for semiconductor devices
The method enhances the performance of semiconductor devices with non-volatile memory by forming a floating gate electrode and gate electrode with sidewall spacers and selective etching, improving charge storage and retrieval.
JP2026109352APending Publication Date: 2026-07-01RENESAS ELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- RENESAS ELECTRONICS CORP
- Filing Date
- 2024-12-19
- Publication Date
- 2026-07-01
AI Technical Summary
Technical Problem
There is a need to improve the performance of semiconductor devices with non-volatile memory having a floating gate electrode.
Method used
A method involving the formation of a floating gate electrode and a gate electrode via gate insulating films, followed by the creation of sidewall spacers and subsequent deposition of silicon oxide and silicon nitride films, with selective etching and metal silicide layer formation to enhance the device structure.
Benefits of technology
The method improves the performance of semiconductor devices by optimizing the insulation and conductivity of the floating gate electrode, enhancing the storage and retrieval of charge.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026109352000001_ABST
Abstract
To improve the performance of semiconductor devices. [Solution] A silicon oxide film is formed on the main surface of the semiconductor substrate SB so as to cover the floating gate electrode FG and gate electrode CG. Then, isotropic etching is performed on the silicon oxide film using the photoresist pattern on the silicon oxide film as an etching mask, and then anisotropic etching is performed on the silicon oxide film. As a result, the silicon oxide film exposed from the photoresist pattern is removed, and an insulating film BL is formed, consisting of the silicon oxide film remaining beneath the photoresist pattern. The insulating film BL covers the floating gate electrode FG. Subsequently, a metal silicide layer SL is formed on the gate electrode CG, and then an insulating film SN made of silicon nitride is formed on the main surface of the semiconductor substrate so as to cover the floating gate electrode FG, gate electrode CG, metal silicide layer SL, and insulating film BL.
Need to check novelty before this filing date? Find Prior Art