Film deposition method and film deposition apparatus
The film forming method addresses the challenge of controlling film embedding shape within recesses by using different processing conditions with gases like hydrogen fluoride and ammonia, enhancing void reduction and filling characteristics.
JP2026110121APending Publication Date: 2026-07-02TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2024-12-20
- Publication Date
- 2026-07-02
Smart Images
Figure 2026110121000001_ABST
Abstract
This technology provides a way to control the shape of the embedded material when filling a recess with a membrane. [Solution] A film-forming method according to one aspect of the present disclosure comprises preparing a substrate having recesses on its surface, forming a first film along the inner surface of the recesses, etching the first film, and further forming the first film along the surface of the etched first film, wherein the etching includes supplying an etching gas containing a halogen-containing gas and a basic gas to the substrate under a plurality of different processing conditions.
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