Horizontal light-emitting diode and method for manufacturing the same
The horizontal SWIR light-emitting diode addresses the limitations of vertical structures by optimizing current distribution and enhancing brightness and flexibility through a novel design, improving its applicability in diverse devices.
JP2026111493APending Publication Date: 2026-07-03TAIWAN ASIA SEMICONDUCTOR CORPORATION
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN ASIA SEMICONDUCTOR CORPORATION
- Filing Date
- 2025-10-07
- Publication Date
- 2026-07-03
Smart Images
Figure 2026111493000001_ABST
Abstract
The present invention provides a horizontal light-emitting diode and a method for manufacturing the same. [Solution] The horizontal light-emitting diode includes a permanent substrate, an epitaxial composite layer, a transparent conductive layer, a plurality of conductive blocks, a first conductivity type electrode, and a second conductivity type electrode. The epitaxial composite layer comprises a light-emitting layer having an emission wavelength of 1100 to 2000 nanometers (nm). The light-emitting layer is mounted on the permanent substrate. The transparent conductive layer is sandwiched between the permanent substrate and the epitaxial composite layer. Each conductive block is mounted between the transparent conductive layer and the epitaxial composite layer and is electrically connected to the epitaxial composite layer. The first conductivity type electrode is mounted on the permanent substrate and is electrically connected to the epitaxial composite layer. The second conductivity type electrode is mounted on the epitaxial composite layer, is electrically connected to the epitaxial composite layer, and is located on the same side as the first conductivity type electrode and the permanent substrate.
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