Substrate processing system and evaluation method for the substrate processing system

Abstract

This provides a technique for acquiring the amount of change in the position of the inner edge of an edge ring. [Solution] The disclosed substrate processing system comprises a chamber, a substrate support, a transport module, an optical sensor, and a control unit. The optical sensor is attached to a movable part. The optical sensor is configured to scan a ring member and acquire optical data of the ring member. The control unit is configured to acquire shape information of the inner edge of the ring member from the optical data and to acquire the amount of change in the position of the inner edge of the ring member from the shape information.

Description

Technical Field

[0004] , , ,

[0005] , , ,

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing system and a method for evaluating a substrate processing system.

Background Art

[0002] A substrate processing system is used in processing a substrate. The substrate processing system includes a chamber, a substrate support, a transfer module, and a control unit. The transfer module includes a transfer device configured to transfer a substrate into a processing space within the chamber. The following Patent Document 1 discloses a substrate processing system including a distance sensor. The distance sensor is configured to measure a distance between an end effector of the transfer device and an annular member placed on the substrate support.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for obtaining a change amount of a position of an inner edge of an edge ring.

Means for Solving the Problems

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system comprises a chamber, a substrate support, a transport module, an optical sensor, and a control unit. The chamber provides a processing space inside. The substrate support is located within the processing space. The substrate support has a substrate support surface and a ring support surface. The substrate support surface is configured on which a substrate is placed. The ring support surface is configured on which a ring member is placed. The ring member is arranged to surround the substrate placed on the substrate support surface. The transport module has a transport device. The transport device is configured to transport substrates into the processing space. The transport device has a movable part. The movable part includes an end effector. The end effector is configured to support a substrate placed on it. An optical sensor is attached to the movable part. The optical sensor is configured to scan the ring member and acquire optical data of the ring member. The control unit is configured to acquire shape information of the inner edge of the ring member from the optical data and to acquire the amount of change in the position of the inner edge of the ring member from the shape information. [Effects of the Invention]

[0006] According to one exemplary embodiment, the change in the position of the inner edge of the edge ring is obtained. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows a substrate processing system according to one exemplary embodiment. [Figure 2] Figure 2 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 3] Figure 3 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. [Figure 4] Figure 4 shows an example of the configuration of an optical sensor. [Figure 5] Figure 5 shows the cross-sectional configuration of an edge ring according to one exemplary embodiment. [Figure 6]Figure 6(a) is a graph showing an example of the relationship between plasma treatment time and the size of the inner edge of the annular portion of the edge ring. Figure 6(b) is a graph showing an example of the relationship between plasma treatment time and the size of the outer edge of the annular portion of the edge ring. [Figure 7] Figure 7 is a flowchart illustrating an evaluation method for a substrate processing system according to one exemplary embodiment. [Modes for carrying out the invention]

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 shows a substrate processing system according to one exemplary embodiment. As shown in Figure 1, the substrate processing system PS comprises at least one process module, a transport module VTM, an optical sensor 5, and a control unit MC. The substrate processing system PS may also comprise a plurality of process modules PM1 to PM6 as at least one process module. In one embodiment, the substrate processing system PS may further comprise load ports LP1 to LP4, an aligner AN, and load lock modules LL1 and LL2.

[0010] The substrate processing system PS may further include a loader module LM. The loader module LM is an example of an atmospheric transport module. The loader module LM includes an atmospheric chamber ACH. The pressure in the atmospheric chamber ACH of the loader module LM is set to atmospheric pressure. The loader module LM may have an FFU (Fan Filter Unit). The loader module LM is, for example, an EFEM (Equipment Front End Module). The loader module LM is positioned between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of edges along the longitudinal direction of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of edges along the longitudinal direction of the loader module LM. The load ports LP1 to LP4 are configured to support cassettes CST1 to 4, respectively. Each of the cassettes CST1 to 4 is a container that houses a plurality of substrates W or ring members R therein. For example, each of cassettes CST1 to CST3 houses a circuit board W, and cassette CST4 houses a ring member R. Each of cassettes CST1 to CST4 is, for example, a FOUP (Front-Opening Unified Pod). The ring member R is either an edge ring ER or a covering ring CR. Details of the edge ring ER and the covering ring CR will be described later.

[0011] The loader module LM includes a transport device TR3. The transport device TR3 may be a transport robot. The transport device TR3 is located inside the atmospheric chamber ACH of the loader module LM. The transport device TR3 may include a movable part AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the movable part AR31 and is configured to support the substrate W or ring member R placed on it. In one example, the transport device TR3 is a transport robot. In one example, the movable part AR31 is the arm of the transport robot. The transport device TR3 transports the substrate W or ring member R based on operation instructions output by the control unit 2, which will be described later. The transport device TR3 transports the substrate W or ring member R between any two of the cassettes CST1-4, load lock modules LL1, LL2, and aligner AN.

[0012] The aligner AN may be positioned along one of a pair of edges of the loader module LM along its short direction. The aligner AN may be positioned along the edge of the loader module LM along its long direction. The aligner AN may be positioned inside the atmospheric chamber ACH of the loader module LM.

[0013] Each of the load lock modules LL1 and LL2 is positioned between the transport module VTM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a depressurization chamber DCH1 and DCH2. Each of the load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve G3. Each of the load lock modules LL1 and LL2 is connected to the transport module VTM via a gate valve G2.

[0014] The transport module VTM may include a vacuum chamber VCH. In the example shown in Figure 1, the transport module VTM is configured to transport the substrate W through a reduced-pressure space within the vacuum chamber VCH. The vacuum chamber VCH is connected to load lock modules LL1 and LL2, respectively, via gate valve G2. Process modules PM1 to PM6 are connected to the vacuum chamber VCH via gate valve G1.

[0015] The transport module VTM includes a transport device TR configured to transport a substrate W. The transport device TR may be a transport robot. In one example, the transport device TR is located inside a vacuum chamber VCH. The transport device TR has end effectors configured to support the substrate W. In the example shown in Figure 1, the transport device TR has movable parts AR11, AR12 and end effectors FK11, FK12. In one example, the transport device TR is a transport robot. In one example, each of the movable parts AR11, AR12 is an arm of the transport robot. The end effector FK11 is attached to the tip of the movable part AR11 and is configured to support the substrate W placed on it. The end effector FK12 is attached to the tip of the movable part AR12 and is configured to support the substrate W placed on it. The transport device TR transports the substrate W based on operation instructions output by the control unit MC, which will be described later.

[0016] The transport device TR holds the substrate W with end effectors FK11 and FK12. The transport device TR transports the substrate W through any two of the paths between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and the vacuum chamber VCH of the transport module VTM.

[0017] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a specific process on the substrate W. At least one of the process modules PM1 to PM6 is a substrate processing system, such as the plasma processing apparatus 1 described later.

[0018] The control unit 2 is, for example, a computer. The control unit 2 can be composed of a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls each part of the substrate processing system PS.

[0019] Note that the substrate processing system PS is not necessarily limited to that shown in FIG. 1. For example, the number of process modules and / or the number of transfer modules in the substrate processing system may be different from that shown in FIG. 1. For example, the number of load ports may be 5 or more, and the number of load ports can be any number. Also, the substrate processing system may be a system (so-called loader type system) in which a plurality of module groups each including a process module and a load lock module are connected to a loader module. Further, the substrate processing system may be a system (so-called cluster type system) in which two or more process modules are arranged and connected around a transfer module so as to surround the transfer module.

[0020] FIG. 2 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Also, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0021] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron cyclotron resonance (ECR) plasma, a helicon wave excited plasma (HWP), or a surface wave plasma (SWP), etc. Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0022] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions implemented by the processing unit 2a1 described herein may be implemented in a circuit or processing circuitry, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), conventional circuitry, and / or a combination thereof, programmed to implement the functions described herein. A processor is considered a circuit or processing circuit, including transistors and other circuitry. A processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be stored in the memory unit 2a2 in advance, or it may be retrieved via a medium when needed. The retrieved program is stored in the memory unit 2a2 and read from the memory unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0023] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of plasma processing apparatus 1. Figure 3 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0024] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0025] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0026] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed within the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode in the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode in the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0027] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0028] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0029] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0030] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0031] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Thus, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0032] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0033] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. If the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0034] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0035] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has multiple cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangular, trapezoidal, triangular, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0036] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0037] As described above, at least one process module PM1 to PM6 has a chamber 10 and a substrate support section 11. The chamber 10 provides a processing space 10s inside it. The substrate support section 11 is located within the processing space 10s. The transport module VTM has a transport device TR. The transport device TR is configured to transport the substrate W into the processing space 10s. The transport device TR has movable parts AR11 and AR12. The movable parts AR11 and AR12 include end effectors FK11 and FK12. The end effectors FK11 and FK12 are configured to support the substrate W placed on them. The control unit MC and the control unit 2 may be integrated. Note that the transport device TR is not limited to a configuration that transports the substrate W into the processing space 10s. The transport device TR only needs to have a movable part AR11. The transport device TR only needs to be configured to transport a part of the movable part AR11 into the processing space 10s.

[0038] The configuration of a substrate processing system PS according to one exemplary embodiment will be described below with reference to Figures 4 to 7. Figure 4 is a diagram showing an example of the configuration of an optical sensor. The optical sensor 5 is attached to the movable part AR11. The optical sensor 5 is attached to a part of the movable part AR11, and this part may be a part that is transported to the processing space 10s. In one embodiment, the optical sensor 5 has at least one optical input unit 52. The optical sensor 5 may further have a photoelectric converter 53. At least one optical input unit 52 is attached to the movable part AR11. In the example shown in Figure 4, at least one optical input unit 52 is attached to the end effector FK11 of the movable part AR11. For example, at least one optical input unit 52 is configured to receive reflected light from a ring member R. For example, the photoelectric converter 53 is configured to receive reflected light that has been incident on at least one optical input unit 52. The photoelectric converter 53 may be included in the optical sensor body 50. The optical sensor body 50 is located separately from the movable part AR11. For example, at least one optical input unit 52 and the optical sensor body 50 may be connected by multiple optical fibers FB.

[0039] Figure 4 shows an example configuration of an end effector FK11 and a movable part AR11, but the configuration may also be that of an end effector FK12 and a movable part AR12. The end effector FK11 has a substantially U-shape when viewed from the vertical. In one embodiment, the end effector FK11 includes a main body FKM and a pair of tip parts FKB. The pair of tip parts FKB protrude from the main body FKM. A gap is defined between the pair of tip parts FKB. The substrate W is supported on the end effector FK11 such that its central axis passes through the gap.

[0040] Figure 5 shows the cross-sectional configuration of an edge ring according to one exemplary embodiment. The edge ring ER is an example of a ring member R. As shown in Figure 5, the substrate support portion 11 has a substrate support surface 111c and a ring support surface 111d. The substrate support surface 111c includes a central region 111a. The ring support surface 111d includes an annular region 111b. The substrate support surface 111c is configured so that a substrate W is placed on it. The ring support surface 111d is configured so that the edge ring ER is placed on it. The edge ring ER includes an annular portion R1. The annular portion R1 is positioned to surround the substrate W placed on the substrate support surface 111c. The edge ring ER may further include an annular portion R2. The annular portion R2 is located below the annular portion R1. The annular portion R2 faces the ring support surface 111d. The size of the inner edge R21 of the annular portion R2 is smaller than the size of the inner edge R11 of the annular portion R1.

[0041] The size of the inner edge may be the diameter of the inner edge. The size of inner edge R21 may be, for example, the diameter of inner edge R21. The size of inner edge R11 may be, for example, the diameter of inner edge R11. The size of the inner edge may also be the size of the chord when a part of the inner edge is formed into an arc. The size of inner edge R21 may be, for example, the size of the chord when a part of inner edge R21 is formed into an arc. The size of inner edge R11 may be, for example, the size of the chord when a part of inner edge R11 is formed into an arc. When the size of inner edge R21 and the size of inner edge R11 are compared, the ends of the arc when a part of inner edge R21 is formed into an arc and the ends of the arc when a part of inner edge R11 is formed into an arc are aligned in a straight line. Therefore, the size of the inner edge includes the diameter of the inner edge and / or the size of the chord when a part of the inner edge is formed into an arc.

[0042] The optical sensor 5 is configured to scan the edge ring ER and acquire optical data of the edge ring ER. In one example, the optical sensor 5 acquires optical data in cooperation with the transport module VTM. In one embodiment, the optical sensor 5 may be a camera. The optical sensor 5 may be configured to acquire optical data including an image of the inner edge R11 of the edge ring ER. The control unit MC is configured to acquire shape information from the optical data. The shape information includes position information MPB corresponding to at least one position of the inner edge R11 of the edge ring ER. In one example, the position information MPB indicates at least one position of the inner edge R11 in coordinate space. For example, the position information MPB may indicate at least one position of the inner edge R11 in the coordinate space of the transport module VTM. The control unit MC may acquire shape information including the position information MPB of the inner edge R11 from an image of the inner edge R11 of the edge ring ER. For example, the control unit MC may obtain positional information MPB of the inner edge R11 of the edge ring ER by identifying the corner between the inner edge R11 of the edge ring ER and the upper surface R12 of the edge ring ER through image processing.

[0043] In one embodiment, the optical sensor 5 may be a displacement sensor that measures distance optically. The displacement sensor may include a confocal displacement sensor and a laser displacement sensor. For example, the transport module VTM is configured to move the movable part AR11 along a scan direction D1 (first scan direction). The scan direction D1 intersects the circumferential direction on which the inner edge R11 extends. The scan direction D1 may also be along the radial direction of the inner edge R11. In one embodiment, the optical sensor 5 includes a plurality of optical input units 52a, 52b. The plurality of optical input units 52a, 52b are each attached to a pair of tip units FKB. The optical sensor 5 may further include a light source 51 configured to emit measurement light that is irradiated onto the edge ring ER. The measurement light may be irradiated onto the edge ring ER from the plurality of optical input units 52a, 52b. In this case, the plurality of optical input units 52a, 52b are a plurality of optical input / output units.

[0044] In one embodiment, the optical sensor 5 may be configured to acquire optical data including light intensity data of reflected light from the ring member R. For example, the optical sensor 5 is configured to acquire optical data including light intensity data of reflected light reflected from measurement light irradiated onto the ring member R. In one embodiment, the optical sensor 5 may be configured to acquire optical data including distance data between the edge ring ER and each of the plurality of optical input units 52a, 52b. The optical sensor 5 may further have a processing circuit 54. The processing circuit 54 is configured to acquire distance data between the edge ring ER and each of the plurality of optical input units 52a, 52b from an electrical signal output from the photoelectric converter 53.

[0045] In one embodiment, the control unit MC is configured to acquire shape information, including position information MPB of the inner edge R11, from the change in light intensity data when the optical sensor 5 acquires optical data of the inner edge R11 along the scan direction D1. For example, the control unit MC may acquire shape information, including position information MPB of the inner edge R11, from the change in light intensity data when the optical sensor 5 acquires optical data of the upper surface R12 and when the optical sensor 5 acquires optical data of the inner edge R11.

[0046] As shown in Figure 5, since the upper surface R12 extends horizontally, the measurement light incident along the vertical direction is reflected vertically at the upper surface R12. Since the inner edge R11 is inclined horizontally, the measurement light incident along the vertical direction is reflected vertically at the inner edge R11 in a direction inclined with respect to the vertical. Therefore, the amount of light obtained from the light intensity data when the optical sensor 5 acquires optical data from the inner edge R11 is smaller than the amount of light obtained from the light intensity data when the optical sensor 5 acquires optical data from the upper surface R12. In one example, the control unit MC may pre-set a light intensity threshold for determining the position information MPB of the inner edge R11. The control unit MC acquires the position where a change in light intensity data that passes the threshold occurs as the position information MPB of the inner edge R11.

[0047] Furthermore, the horizontal upper surface R12 and the inclined inner edge R11 may be connected by a curved surface. The entire inner edge R11 may also be a curved surface. By being exposed to plasma, a curved surface may be formed on the edge ring ER. If the edge ring ER includes such a curved surface, the light intensity data obtained when the optical sensor 5 acquires optical data from the upper surface R12 and the light intensity data obtained when the optical sensor 5 acquires optical data from the inner edge R11 may change gradually.

[0048] In one embodiment, the control unit MC is configured to acquire shape information, including position information MPB of the inner edge R11, from the change in distance data when the optical sensor 5 acquires optical data of the inner edge R11 along the scan direction D1. For example, the control unit MC may acquire shape information, including position information MPB of the inner edge R11, from the change in distance data when the optical sensor 5 acquires optical data of the upper surface R12 and when the optical sensor 5 acquires optical data of the inner edge R11. If the inner edge R11 extends in the vertical direction, the control unit MC may use the change in distance data between the space inside the inner edge R11 and the upper surface R12 as the change in distance data when optical data of the inner edge R11 is acquired.

[0049] The control unit MC is configured to obtain the amount of change in the position of the inner edge of the ring member R from the shape information. The amount of wear of the ring member R can be estimated based on the amount of change in the position of the inner edge of the ring member R. The ring member R is worn down by processing such as plasma processing on the substrate W. The shape of the ring member R changes as it wears down so that the size of its inner edge R11 increases. In one example, in the edge ring ER, the shape changes so that the corner between the inner edge R11 and the upper surface R12 is rounded, and the position of the inner edge R11 changes so that the size of the inner edge R11 increases. In the substrate processing system PS, the control unit MC obtains shape information including the position information MPB of the inner edge R11 of the edge ring ER from optical data, so the amount of change in the position of the inner edge R11 of the edge ring ER is obtained. For example, the control unit MC may obtain the amount of change in the position of the inner edge R11 of the edge ring ER by comparing the position information of the inner edge R11 of the edge ring ER which is predetermined with the position information of the inner edge R11 of the edge ring ER included in the obtained shape information. The amount of wear on the edge ring ER can be estimated based on the change in the position of the inner edge R11 of the edge ring ER.

[0050] In one embodiment, the transport module VTM may be configured to move the movable part AR11 along the scan direction D1 to acquire optical data for at least one first position of the inner edge R11, at least one second position of the inner edge R11, and the substrate support surface 111c located between the at least one first position and the at least one second position (see Figure 4). The control unit MC is configured to acquire shape information including first position information PB1 corresponding to at least one first position of the inner edge R11 and second position information PB2 corresponding to at least one second position of the inner edge R11.

[0051] The first position information PB1 may include a plurality of first coordinates B1a, B1b. The control unit MC may obtain the first coordinate B1a from the change in light intensity data acquired by the optical input unit 52a. The control unit MC may obtain the first coordinate B1b from the change in light intensity data acquired by the optical input unit 52b. The optical sensor 5 obtains distance data between the first coordinate B1a and the optical input unit 52a, and distance data between the first coordinate B1b and the optical input unit 52b. The second position information PB2 may include a plurality of second coordinates B2a, B2b. The control unit MC may obtain the second coordinate B2a from the change in light intensity data acquired by the optical input unit 52a. The control unit MC may obtain the second coordinate B2b from the change in light intensity data acquired by the optical input unit 52b. The optical sensor 5 acquires distance data between the inner edge R11 and the optical input section 52a at the second coordinate B2a, and distance data between the inner edge R11 and the optical input section 52b at the second coordinate B2b.

[0052] In one embodiment, the transport module VTM may be configured to move the movable part AR11 along the scan direction D2 (second scan direction) to acquire optical data of at least one third position on the inner edge R11, at least one fourth position on the inner edge R11, and the substrate support surface 111c located between the at least one third position and the at least one fourth position. The scan direction D2 intersects the scan direction D1. The scan direction D2 may be perpendicular to the scan direction D1. The scan direction D2 does not have to be a straight line. The scan direction D2 may be along a circle centered on the joint of the movable part AR11.

[0053] The control unit MC is configured to acquire shape information including third position information PB3 corresponding to at least one third position of the inner edge R11 and fourth position information PB4 corresponding to at least one fourth position of the inner edge R11. The third position information PB3 may include a third coordinate. The control unit MC may acquire the third coordinate from the change in light intensity data acquired by the optical input unit 52a. The fourth position information PB4 may include a fourth coordinate. The control unit MC may acquire the fourth coordinate from the change in light intensity data acquired by the optical input unit 52b. The optical sensor 5 acquires distance data between the inner edge R11 and the optical input unit 52a at at least one third position, and distance data between the inner edge R11 and the optical input unit 52b at at least one fourth position.

[0054] In one embodiment, the control unit MC may be configured to acquire the position information of the center of the ring member R from shape information including position information MPB of the inner edge R11. For example, the control unit MC geometrically calculates the coordinate information of the center of the edge ring ER in the coordinate system in which the end effector FK11 moves. In one example, since the inner edge R11 of the edge ring ER has a circular shape, the control unit MC may obtain the position information of the center of the edge ring ER by position information MPB corresponding to three or more positions on the inner edge R11. In another example, the control unit MC may acquire the position information of the center of the edge ring ER by using the previously acquired inner diameter of the inner edge R11 of the edge ring ER and the position information MPB.

[0055] In one embodiment, the control unit MC may be configured to obtain the change in the size of the inner edge R11 from shape information including the position information MPB of the inner edge R11. As described above, the size of the inner edge R11 may be the diameter of the inner edge R11. The size of the inner edge R11 may be the distance between a first position corresponding to a first position information PB1 and a second position corresponding to a second position information PB2. In one example, the size of the inner edge R11 may be the distance between a first coordinate B1a and a second coordinate B2a, and / or the distance between a first coordinate B1b and a second coordinate B2b. The size of the inner edge R11 may be the distance between a third position corresponding to a third position information PB3 and a fourth position corresponding to a fourth position information PB4. The change in the size of the inner edge R11 of the edge ring ER allows for a more accurate estimation of the wear of the edge ring ER.

[0056] In one embodiment, the control unit MC may be configured to acquire shape information of the outer edge R13 of the edge ring ER from optical data. If the optical sensor 5 is a camera, the control unit MC may acquire position information MPE of the outer edge R13 of the edge ring ER by identifying the coordinates of the corner between the outer edge R13 of the edge ring ER and the upper surface R12 of the annular portion R11 through image processing. The shape of the edge ring ER changes as it wears down, such that the size of its outer edge R13 decreases. In one example, the shape of the edge ring ER changes so that the corner between the outer edge R13 and the upper surface R12 is rounded, and the size of the outer edge R13 decreases. In the substrate processing system PS, since the control unit MC acquires shape information of the outer edge R13 of the edge ring ER from optical data, the amount of change in the position of the outer edge R13 of the edge ring ER is acquired. Based on the amount of change in the position of the outer edge R13 of the edge ring ER, the amount of wear of the edge ring ER can be estimated.

[0057] In one embodiment, the control unit MC may be configured to acquire shape information, including position information MPE of the outer edge R13, from the change in light intensity data when the optical sensor acquires optical data of the outer edge R13 of the annular portion R1 along the scan direction D1. For example, the control unit MC may acquire shape information, including position information MPE of the outer edge R13, from the change in light intensity data when the optical sensor 5 acquires optical data of the upper surface R12 and when the optical sensor 5 acquires optical data of the outer edge R13. For example, the control unit MC may acquire the amount of change in the position of the outer edge R13 of the edge ring ER by comparing the position information MPE of the outer edge R13 of the edge ring ER, which is predetermined, with the position information MPE of the edge ring ER included in the acquired shape information.

[0058] In one embodiment, the control unit MC may be configured to acquire shape information, including position information MPE of the outer edge R13, from the change in distance data when the optical sensor acquires optical data of the outer edge R13 of the annular portion R1 along the scan direction D1. For example, the control unit MC may acquire shape information, including position information MPE of the outer edge R13, from the change in distance data when the optical sensor 5 acquires optical data of the upper surface R12 and when the optical sensor 5 acquires optical data of the outer edge R13. The control unit MC may also use the change in distance data between the space outside the outer edge R13 and the upper surface R12 as the change in distance data when optical data of the outer edge R13 is acquired. For example, the control unit MC may compare the position information MPE of the outer edge R13 of the edge ring ER, which is predetermined, with the position information MPE of the edge ring ER included in the acquired shape information to acquire the amount of change in the position of the outer edge R13 of the edge ring ER.

[0059] In one embodiment, the transport module VTM may be configured to move the movable part AR11 along the scan direction D1 to acquire optical data for each of the following: at least one first position of the outer edge R13, at least one second position of the outer edge R13, and the inner edge R11 located between the at least one first position and the at least one second position (see Figure 4). The control unit MC is configured to acquire shape information including first position information PE1 corresponding to at least one first position of the outer edge R13 and second position information PE2 corresponding to at least one second position of the outer edge R13.

[0060] The first position information PE1 may include a plurality of first coordinates E1a, E1b. The control unit MC may obtain the first coordinate E1a from the change in light intensity data acquired by the optical input unit 52a. The control unit MC may obtain the first coordinate E1b from the change in light intensity data acquired by the optical input unit 52b. The optical sensor 5 obtains distance data between the outer edge R13 at the first coordinate E1a and the optical input unit 52a, and distance data between the outer edge R13 at the first coordinate E1b and the optical input unit 52b. The second position information PE2 may include a plurality of second coordinates E2a, E2b. The control unit MC may obtain the second coordinate E2a from the change in light intensity data acquired by the optical input unit 52a. The control unit MC may obtain the second coordinate E2b from the change in light intensity data acquired by the optical input unit 52b. The optical sensor 5 acquires distance data between the outer edge R13 and the optical input unit 52a at the second coordinate E2a, and distance data between the outer edge R13 and the optical input unit 52b at the second coordinate E2b. The inner edge R11 is located between a first position corresponding to at least one first position information PE1 and a second position corresponding to at least one second position information PE2.

[0061] In one embodiment, the transport module VTM may be configured to move the movable part AR11 along the scan direction D2 to acquire optical data for each of the following: at least one third position on the outer edge R13, at least one fourth position on the outer edge R13, and the inner edge R11 located between the at least one third position and the at least one fourth position. The control unit is configured to acquire shape information including a third position information PE3 corresponding to at least one third position on the outer edge R13 and a fourth position information PE4 corresponding to at least one fourth position on the outer edge R13.

[0062] The third position information PE3 may include a third coordinate. The control unit MC may obtain the third coordinate from the change in light intensity data acquired by the optical input unit 52a. The fourth position information PE4 may include a fourth coordinate. The control unit MC may obtain the fourth coordinate from the change in light intensity data acquired by the optical input unit 52a. The optical sensor 5 acquires distance data between the outer edge R13 and the optical input unit 52a at at least one third position, and distance data between the outer edge R13 and the optical input unit 52b at at least one fourth position.

[0063] In one embodiment, the control unit MC may be configured to obtain information on the size of the outer edge R13 from the shape information of the outer edge R13 and to obtain the amount of change in size. The size of the outer edge may be the diameter of the outer edge. In one example, the size of the outer edge R13 is the diameter of the outer edge R13. The size of the outer edge may also be the size of the chord when a part of the outer edge is formed into an arc. For example, the size of the outer edge R13 may be the size of the chord when a part of the outer edge R13 is formed into an arc. The size of the outer edge R13 may also be the distance between a first position corresponding to a first position information PE1 and a second position corresponding to a second position information PE2. In one example, the size of the outer edge R13 may be the distance between a first coordinate E1a and a second coordinate E2a. In one example, the size of the outer edge R13 may be the distance between a first coordinate E1b and a second coordinate E2b. The size of the outer edge R13 may also be the distance between a third position corresponding to a third position information PE3 and a fourth position corresponding to a fourth position information PE4. The amount of wear on the edge ring ER can be more accurately estimated by considering the change in the size of the outer edge radius R13 of the edge ring ER.

[0064] In one embodiment, the control unit MC may be configured to acquire shape information, including the height of the upper surface R12 of the edge ring ER, from distance data acquired by the optical sensor 5 when it acquires optical data of the upper surface R12 of the edge ring ER. The shape of the edge ring ER changes as it wears down, such that the height of its upper surface R12 decreases. In the substrate processing system PS, the control unit MC acquires shape information, including the height of the upper surface R12 of the edge ring ER, from distance data acquired by the optical sensor 5 when it acquires optical data of the upper surface R12 of the edge ring ER, so that the amount of wear on the edge ring ER is evaluated more appropriately. For example, the control unit MC may estimate the amount of wear on the edge ring ER by comparing the height of the upper surface R12 of the annular portion R1 with a predetermined height of the upper surface R12 of the annular portion R1 included in the acquired shape information.

[0065] In one embodiment, the control unit MC may be configured to acquire first shape information and second shape information, and to acquire the change in the position of the inner edge R11 of the edge ring ER from the change in the amount from the first shape information to the second shape information. The first shape information is the shape information of the edge ring ER before at least one plasma treatment of at least one substrate including the substrate W placed on the substrate support surface 111c. The second shape information is the shape information of the edge ring ER after at least one plasma treatment of at least one substrate including the substrate W placed on the substrate support surface 111c. In one example, m plasma treatments are performed on each of the n substrates W that are replaced and placed one by one on the substrate support surface 111c. Each of n and m is a natural number of 1 or more. In this case, the edge ring ER can be exposed to plasma in n × m plasma treatments. The first and second shape information may each include at least one selected from the group consisting of the shape information of the inner edge R11, the size of the inner edge R11, the shape information of the outer edge R13, the size of the outer edge R13, and the height of the top surface R12. Since the first shape information before at least one plasma treatment and the second shape information after at least one plasma treatment are compared, the amount of change in the shape of the edge ring ER can be obtained more appropriately than by comparing it with predetermined shape information.

[0066] The first shape information may be acquired before the edge ring ER is worn out. The first shape information may include the shape information of an unused edge ring ER. The control unit MC may store the amount of change from the first shape information to the second shape information, corresponding to the identifier of the edge ring ER. In one example, the control unit MC may be configured to evaluate the amount of wear of the edge ring ER from the cumulative value of the amount of change from the first shape information to the second shape information. In one embodiment, the control unit MC may be configured to estimate the period from the amount of change in shape information over the time of at least one plasma treatment until the amount of change in the shape of the edge ring ER becomes large enough not to meet the tolerance conditions. The amount of change in the shape of the edge ring ER is large enough not to meet the tolerance conditions, including the amount of change in the shape of the edge ring ER being greater than or equal to a threshold. The amount of change in the shape of the edge ring ER may include at least one selected from the group consisting of the position of the inner edge R11, the position information MPB of the inner edge R11, the size of the inner edge R11, the position of the outer edge R13, the position information MPE of the outer edge R13, the size of the outer edge R13, and the height of the top surface R12.

[0067] Figure 6(a) is a graph showing an example of the relationship between the plasma treatment time and the size of the inner edge of the annular portion of the edge ring. In one embodiment, the control unit MC may be configured to acquire information on a first size of the inner edge R11 and information on a second size of the inner edge R11, and to acquire the amount of change from the first size to the second size. From the amount of change from the first size to the second size, the amount of wear of the edge ring ER can be estimated. The information on the first size of the inner edge R11 is information on the size of the inner edge R11 before at least one plasma treatment of the substrate W placed on the substrate support surface 111c. The information on the second size of the inner edge R11 is information on the size of the inner edge R11 after at least one plasma treatment of the substrate W placed on the substrate support surface 111c. For example, the control unit MC may estimate the amount of wear of the edge ring ER from the increase in the ID indicating the size of the inner edge R11 of the edge ring ER.

[0068] According to Dini in Figure 6(a), the first size of the inner edge R11 of an unused edge ring ER is shown. The control unit MC may estimate the wear of the edge ring ER from the change in size from Dini to a second size. In one embodiment, the control unit MC may be configured to estimate the period until the change in the size of the inner edge R11 of the edge ring ER becomes too large to meet the tolerance, based on the change in the size of the inner edge R11 with respect to the plasma processing time. According to Dlim in Figure 6(a), the threshold size of the inner edge R11 is shown when the change in the size of the inner edge R11 of the edge ring ER becomes too large to meet the tolerance. The control unit MC may estimate the period until the plasma processing time Tlim is reached when the change in the size of the inner edge R11 of the edge ring ER becomes too large to meet the tolerance, based on the change in the size of the inner edge R11 with respect to the time of at least one plasma processing cycle.

[0069] Figure 6(b) is a graph showing an example of the relationship between the plasma treatment time and the size of the outer edge of the annular portion of the edge ring. In one embodiment, the control unit MC may be configured to acquire information on a first size of the outer edge R13 and information on a second size of the outer edge R13, and to acquire the amount of change from the first size to the second size. The information on the first size of the outer edge R13 is information on the size of the outer edge R13 before at least one plasma treatment of the substrate W placed on the substrate support surface 111c. The information on the second size of the outer edge R13 is information on the size of the outer edge R13 after at least one plasma treatment of the substrate W placed on the substrate support surface 111c. For example, the control unit MC may estimate the amount of wear of the edge ring ER from the decrease in OD, which indicates the size of the outer edge R13 of the edge ring ER.

[0070] According to Dini in Figure 6(b), the first size of the outer edge R13 of an unused edge ring ER is shown. The control unit MC may estimate the wear of the edge ring ER from the change in size from Dini to a second size. In one embodiment, the control unit MC may be configured to estimate the period until the change in the size of the outer edge R13 of the edge ring ER becomes too large to meet the tolerance, based on the change in the size of the outer edge R13 over the time of at least one plasma treatment. According to Dlim in Figure 6(b), the threshold size of the outer edge R13 is shown when the change in the size of the outer edge R13 of the edge ring ER becomes too large to meet the tolerance. The control unit MC may estimate the period until the time of at least one plasma treatment Tlim when the change in the size of the outer edge R13 of the edge ring ER becomes too large to meet the tolerance, based on the change in the size of the outer edge R13 over the time of plasma treatment.

[0071] In one embodiment, the optical sensor 5 may be configured to acquire optical data of the annular portion R1 when the transport device TR transports the substrate W into the processing space 10s. The change in the shape of the edge ring ER is acquired before at least one plasma treatment of the substrate W placed on the substrate support surface 111c, thereby stabilizing the plasma treatment of the substrate W. The optical sensor 5 may be configured to acquire optical data of the edge ring ER over a predetermined period. The predetermined period may be the period during which the edge ring ER is exposed to plasma by at least one plasma treatment of the substrate W. In one example, the optical sensor 5 may be configured to acquire optical data of the edge ring ER when the period during which the edge ring ER has been exposed to plasma exceeds 100 hours.

[0072] In one embodiment, the substrate support portion 11 may have a plurality of lifter pins RP and an actuator AC (see Figure 5). The plurality of lifter pins RP are configured to protrude upward from the ring support surface 111d. The actuator AC is configured to move the plurality of lifter pins RP up and down. The control unit MC may be configured to control the actuator AC to move the edge ring ER, which is placed on the ring support surface 111d, upward via the plurality of lifter pins RP if it determines that the amount of change in the shape of the edge ring ER is too large to meet the allowable conditions. For example, the control unit MC may adjust the amount of upward movement of the edge ring ER according to the amount of change in the shape of the edge ring ER. The amount of change in the shape of the edge ring ER being too large to meet the allowable conditions includes the amount of change in the shape of the edge ring ER being greater than or equal to a threshold. By moving the edge ring ER upward, the decrease in the height of the upper surface R12 of the annular portion R1 due to wear of the edge ring ER is compensated for.

[0073] In one embodiment, the substrate processing system PS may further include a voltage generation unit. The voltage generation unit is configured to apply a voltage to the edge ring ER. In one example, the first voltage generation unit 32a may be configured to apply a voltage to the edge ring ER. In one embodiment, the control unit MC is configured to control the first voltage generation unit 32a to apply a voltage to the edge ring ER when it determines that the amount of change in the position of the inner edge R11 of the edge ring ER is large enough that it does not meet the allowable conditions. For example, the control unit MC may adjust the magnitude of the voltage applied to the edge ring ER according to the amount of change in the shape of the edge ring ER. The amount of change in the shape of the edge ring ER being large enough that it does not meet the allowable conditions includes the amount of change in the shape of the edge ring ER being greater than or equal to a threshold. When a voltage is applied to the edge ring ER, a plasma sheath is formed on the surface of the edge ring ER, and the influence of plasma processing on the substrate W due to the change in the shape of the edge ring ER is reduced.

[0074] Figure 7 is a flowchart showing an evaluation method for a substrate processing system according to one exemplary embodiment. The evaluation method shown in Figure 7 (hereinafter referred to as "Method MT") is performed in the substrate processing system PS described above as an example. As described above, the substrate processing system PS includes a transport module VTM and an optical sensor 5. The transport module VTM includes a transport device TR. The optical sensor 5 may include a plurality of optical input units 52 and a photoelectric converter 53. The optical sensor 5 is attached to the movable part AR11 of the transport device TR. The photoelectric converter 53 receives reflected light from the edge ring ER incident on the plurality of optical input units 52.

[0075] Method MT begins in process STa. In process STa, the optical sensor 5 acquires optical data of the edge ring ER placed on the ring support surface 111d. As described above, the edge ring ER is positioned to surround the substrate W placed on the substrate support surface 111c.

[0076] Next, in process STb, shape information of the inner edge R11 of the edge ring ER is obtained from the optical data acquired in process STa, and the amount of change in the position of the edge ring ER is obtained from the shape information. As described above, the shape information may include at least one selected from the group consisting of the position of the inner edge R11, the position information MPB of the inner edge R11, the size of the inner edge R11, the position of the outer edge R13, the position information MPE of the outer edge R13, the size of the outer edge R13, and the height of the upper surface R12. Method MT may be performed by the control unit MC or by an operator.

[0077] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0078] In the exemplary embodiment described above, an edge ring ER was given as an example of a ring member R. However, a covering ring CR may be used instead of the edge ring ER.

[0079] The transport device TR is not limited to a configuration that transports the substrate W into the processing space 10s. The end effector is not limited to a configuration that supports the substrate W. The transport device TR only needs to move a part of the movable part AR11 to which the optical sensor 5 is attached into the processing space 10s. The part of the movable part AR11 to which the optical sensor 5 is attached may be an end effector.

[0080] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E20] below.

[0081] [E1] Inside it is a chamber that provides a processing space, A substrate support portion disposed within the processing space, comprising a substrate support surface configured on which a substrate is placed, and a ring support surface configured on which a ring member, which is arranged to surround the substrate placed on the substrate support surface, is placed, A transport device having a movable part including an end effector configured to support the substrate placed thereon, and a transport module having the transport device configured to transport the substrate into the processing space, An optical sensor is attached to the movable part and configured to scan the ring member and acquire optical data of the ring member, A control unit configured to acquire shape information of the inner edge of the ring member from the optical data and to acquire the amount of change in the position of the inner edge of the ring member from the shape information of the inner edge, A substrate processing system comprising the above. [E2] The transport module is configured to move the movable part along a scanning direction that intersects the circumferential direction in which the inner edge extends, The optical sensor has a plurality of light input units and is configured to acquire optical data including light intensity data of reflected light from the ring member. The control unit is configured to acquire shape information, including position information of the inner edge, from the change in light intensity data when the optical sensor acquires optical data of the inner edge along the scanning direction. The substrate processing system described in E1. [E3] The control unit is configured to acquire the position information of the center of the ring member from the shape information, which includes the position information of the inner edge. The substrate processing system described in E2. [E4] The control unit is configured to obtain the amount of change in the size of the inner edge from the shape information, which includes the position information of the inner edge. A substrate processing system as described in E2 or E3. [E5] The optical sensor is configured to acquire optical data including distance data between the ring member and each of the plurality of optical input units. The control unit is configured to acquire shape information, including the height of the upper surface of the ring member, from the distance data obtained when the optical sensor acquires optical data of the upper surface of the ring member. A substrate processing system as described in any one of items E2 to E4. [E6] The control unit is configured to acquire shape information of the outer edge of the ring member from the optical data and to acquire the amount of change in the position of the outer edge of the ring member from the shape information of the outer edge. A substrate processing system as described in any one of items E1 to E5. [E7] The control unit is configured to acquire shape information, including positional information of the outer edge, from the change in light intensity data when the optical sensor acquires optical data of the outer edge of the ring member along the scanning direction. A substrate processing system as described in any one of items E2 to E5. [E8] The control unit is configured to obtain information about the size of the outer edge from the shape information of the outer edge, and to obtain the amount of change in the size of the outer edge. The substrate processing system described in E7. [E9] The transport module is configured to move the movable part along the scanning direction in order to acquire the optical data of at least one first position on the inner edge, at least one second position on the inner edge, and the substrate support surface located between the at least one first position on the inner edge and the at least one second position on the inner edge. The control unit is configured to acquire the shape information, which further includes first position information corresponding to at least one first position of the inner edge and second position information corresponding to at least one second position of the inner edge. A substrate processing system as described in any one of items E1 to E8. [E10] The aforementioned scan direction is the first scan direction, The transport module is configured to move the movable part along a second scan direction intersecting the first scan direction in order to acquire the optical data of at least one third position on the inner edge, at least one fourth position on the inner edge, and the substrate support surface located between the at least one third position on the inner edge and the at least one fourth position on the inner edge. The control unit is configured to acquire the shape information, which further includes a third position information corresponding to at least one third position on the inner edge and a fourth position information corresponding to at least one fourth position on the inner edge. The substrate processing system described in E9. [E11] The transport module is configured to move the movable part along the scanning direction in order to acquire the optical data of each of the following: at least one first position on the outer edge, at least one second position on the outer edge, and the inner edge located between the at least one first position on the outer edge and the at least one second position on the outer edge. The control unit is configured to acquire the shape information, which includes first position information corresponding to at least one first position on the outer edge and second position information corresponding to at least one second position on the outer edge. A substrate processing system as described in any one of items E7 to E10. [E12] The aforementioned scan direction is the first scan direction, The transport module is configured to move the movable part along a second scan direction intersecting the first scan direction in order to acquire the optical data of each of the following: at least one third position on the outer edge, at least one fourth position on the outer edge, and the inner edge located between the at least one third position on the outer edge and the at least one fourth position on the outer edge. The control unit is configured to acquire the shape information, which includes a third position information corresponding to at least one third position and a fourth position information corresponding to at least one fourth position. The substrate processing system described in E11. [E13] The control unit, First shape information is acquired as shape information for at least one plasma treatment of at least one substrate, including the substrate placed on the substrate support surface, A second shape information is obtained as the shape information after the at least one plasma treatment of the at least one substrate. The amount of change in the position of the inner edge of the ring member is obtained from the amount of change from the first shape information to the second shape information. It is structured in such a way. A substrate processing system as described in any one of items E1 to E12. [E14] The control unit, Information on the first size of the inner edge is obtained before at least one plasma treatment of at least one substrate, including the substrate placed on the substrate support surface, Information on the second size of the inner edge after at least one plasma treatment of the at least one substrate is obtained. The amount of change in the position of the inner edge of the ring member is obtained from the amount of change from the first size to the second size. It is structured in such a way. A substrate processing system as described in any one of items E4 to E13. [E15] The control unit, Information on the first size of the outer edge is obtained before at least one plasma treatment of at least one substrate, including the substrate placed on the substrate support surface. Information on the second size of the outer edge after at least one plasma treatment of the at least one substrate is obtained. The amount of change in the position of the outer edge of the ring member is obtained from the amount of change from the first size to the second size. It is structured in such a way. A substrate processing system as described in any one of items E8-14. [E16] The control unit is configured to estimate, from the amount of change with respect to the time of at least one plasma treatment, the period until the amount of change in the position of the inner edge of the ring member becomes so large that it no longer satisfies the allowable conditions. A substrate processing system as described in any one of items E13 to E15. [E17] The optical sensor is configured to acquire optical data of the ring member when the transport device transports the substrate into the processing space. A substrate processing system as described in any one of items E1 to E16. [E18] The substrate support portion is, Multiple lifter pins configured to protrude upward from the ring support surface, The actuator is configured to move the plurality of lifter pins up and down, The control unit is configured to control the actuator to move the ring member, which is placed on the ring support surface, upward via the plurality of lifter pins if it determines that the amount of change in the position of the inner edge of the ring member is too large to meet the allowable conditions. A substrate processing system as described in any one of items E1 to E17. [E19] The system further comprises a voltage generating unit configured to apply a voltage to the ring member, The control unit is configured to control the voltage generation unit to apply a voltage to the ring member if it determines that the amount of change in the position of the inner edge of the ring member is too large to meet the allowable conditions. A substrate processing system as described in any one of items E1 to E18. [E20] (a) A step in which an optical sensor acquires optical data of a ring member placed on a ring support surface, the ring member being positioned to surround a substrate placed on a substrate support surface, wherein the optical sensor is attached to a movable part of a transport device of a transport module, and the step is as follows: (b) A step of obtaining shape information of the inner edge of the ring member from the optical data and obtaining the amount of change in the position of the inner edge of the ring member from the shape information, including, Evaluation method for substrate processing systems.

[0082] The evaluation method for the substrate processing system in E20 may be performed using the substrate processing system described in any one of the items E1 to E19.

[0083] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of symbols]

[0084] 2,MC…Control unit, 5…Optical sensor, 10…Chamber, 10s…Processing space, 11…Substrate support part, 111c…Substrate support surface, 111d…Ring support surface, AC…Actuator, AR11,AR12…Movable part, MPB…Inner edge position information, PB1…First position information, PB2…Second position information, PB3…Third position information, PB4…Fourth position information, MPE…Outer edge position information, PE1…First position information, PE2…Second position information, PE3…Third position information, PE4…Fourth position information, D1…Scan direction (first scan direction), D2…Scan direction (second scan direction), ER…Edge ring, FK11,FK12…End effector, PS…Substrate processing system, R…Ring member, R11…Inner edge, R12…Top surface, R13…Outer edge, RP…Lifter pin, TR…Transport device, VTM…Transport module, W…Substrate.

Claims

1. Inside it is a chamber that provides a processing space, A substrate support portion disposed within the processing space, comprising a substrate support surface configured on which a substrate is placed, and a ring support surface configured on which a ring member, which is arranged to surround the substrate placed on the substrate support surface, is placed, A transport device having a movable part including an end effector configured to support the substrate placed thereon, and a transport module having the transport device configured to transport the substrate into the processing space, An optical sensor is attached to the movable part and configured to scan the ring member and acquire optical data of the ring member, A control unit configured to acquire shape information of the inner edge of the ring member from the optical data and to acquire the amount of change in the position of the inner edge of the ring member from the shape information of the inner edge, A substrate processing system comprising:

2. The transport module is configured to move the movable part along a scanning direction that intersects the circumferential direction in which the inner edge extends, The optical sensor has a plurality of light input units and is configured to acquire optical data including light intensity data of reflected light from the ring member. The control unit is configured to acquire shape information, including position information of the inner edge, from the change in light intensity data when the optical sensor acquires optical data of the inner edge along the scanning direction. The substrate processing system according to claim 1.

3. The control unit is configured to acquire the position information of the center of the ring member from the shape information, which includes the position information of the inner edge. The substrate processing system according to claim 2.

4. The control unit is configured to acquire the amount of change in the size of the inner edge from the shape information, which includes the position information of the inner edge. The substrate processing system according to claim 2.

5. The optical sensor is configured to acquire optical data including distance data between the ring member and each of the plurality of optical input units. The control unit is configured to acquire shape information, including the height of the upper surface of the ring member, from the distance data obtained when the optical sensor acquires optical data of the upper surface of the ring member. The substrate processing system according to claim 2.

6. The control unit is configured to acquire shape information of the outer edge of the ring member from the optical data and to acquire the amount of change in the position of the outer edge of the ring member from the shape information of the outer edge. The substrate processing system according to claim 1.

7. The control unit is configured to acquire shape information, including positional information of the outer edge, from the change in light intensity data when the optical sensor acquires optical data of the outer edge of the ring member along the scanning direction. The substrate processing system according to claim 2.

8. The control unit is configured to obtain information about the size of the outer edge from the shape information of the outer edge, and to obtain the amount of change in the size of the outer edge. The substrate processing system according to claim 7.

9. The transport module is configured to move the movable part along the scanning direction in order to acquire the optical data of at least one first position on the inner edge, at least one second position on the inner edge, and the substrate support surface located between the at least one first position on the inner edge and the at least one second position on the inner edge. The control unit is configured to acquire the shape information, which further includes first position information corresponding to at least one first position of the inner edge and second position information corresponding to at least one second position of the inner edge. A substrate processing system according to any one of claims 2 to 5, 7, or 8.

10. The aforementioned scan direction is the first scan direction, The transport module is configured to move the movable part along a second scan direction intersecting the first scan direction in order to acquire the optical data of each of the following: at least one third position on the inner edge, at least one fourth position on the inner edge, and the substrate support surface located between the at least one third position on the inner edge and the at least one fourth position on the inner edge. The control unit is configured to acquire the shape information, which further includes a third position information corresponding to at least one third position on the inner edge and a fourth position information corresponding to at least one fourth position on the inner edge. The substrate processing system according to claim 9.

11. The transport module is configured to move the movable part along the scanning direction in order to acquire the optical data of each of the following: at least one first position on the outer edge, at least one second position on the outer edge, and the inner edge located between the at least one first position on the outer edge and the at least one second position on the outer edge. The control unit is configured to acquire the shape information, which includes first position information corresponding to at least one first position on the outer edge and second position information corresponding to at least one second position on the outer edge. The substrate processing system according to claim 7 or 8.

12. The aforementioned scan direction is the first scan direction, The transport module is configured to move the movable part along a second scan direction intersecting the first scan direction in order to acquire the optical data of each of the following: at least one third position on the outer edge, at least one fourth position on the outer edge, and the inner edge located between the at least one third position on the outer edge and the at least one fourth position on the outer edge. The control unit is configured to acquire the shape information, which includes a third position information corresponding to at least one third position and a fourth position information corresponding to at least one fourth position. The substrate processing system according to claim 11.

13. The control unit, First shape information is acquired as shape information for at least one plasma treatment of at least one substrate, including the substrate placed on the substrate support surface, Second shape information is obtained as the shape information after the at least one plasma treatment of the at least one substrate, The amount of change in the position of the inner edge of the ring member is obtained from the amount of change from the first shape information to the second shape information. It is structured in such a way. A substrate processing system according to any one of claims 1 to 8.

14. The control unit, Information on the first size of the inner edge is obtained before at least one plasma treatment of at least one substrate, including the substrate placed on the substrate support surface. Information on the second size of the inner edge after at least one plasma treatment of the at least one substrate is obtained. The amount of change in the position of the inner edge of the ring member is obtained from the amount of change from the first size to the second size. It is structured in such a way. The substrate processing system according to claim 4.

15. The control unit, Information on the first size of the outer edge is obtained for at least one substrate, including the substrate placed on the substrate support surface, before at least one plasma treatment. Information on the second size of the outer edge after at least one plasma treatment of the at least one substrate is obtained. The amount of change in the position of the outer edge of the ring member is obtained from the amount of change from the first size to the second size. It is structured in such a way. The substrate processing system according to claim 8.

16. The control unit is configured to estimate, from the amount of change with respect to the time of at least one plasma treatment, the period until the amount of change in the position of the inner edge of the ring member becomes so large that it no longer satisfies the allowable conditions. The substrate processing system according to claim 13.

17. The optical sensor is configured to acquire optical data of the ring member when the transport device transports the substrate into the processing space. A substrate processing system according to any one of claims 1 to 8.

18. The substrate support portion is, Multiple lifter pins configured to protrude upward from the ring support surface, The actuator is configured to move the plurality of lifter pins up and down, The control unit is configured to control the actuator to move the ring member, which is placed on the ring support surface, upward via the plurality of lifter pins if it determines that the amount of change in the position of the inner edge of the ring member is too large to meet the allowable conditions. A substrate processing system according to any one of claims 1 to 8.

19. The system further comprises a voltage generating unit configured to apply a voltage to the ring member, The control unit is configured to control the voltage generation unit to apply a voltage to the ring member if it determines that the amount of change in the position of the inner edge of the ring member is too large to meet the allowable conditions. A substrate processing system according to any one of claims 1 to 8.

20. (a) A step in which an optical sensor acquires optical data of a ring member placed on a ring support surface, the ring member being positioned to surround a substrate placed on a substrate support surface, wherein the optical sensor is attached to a movable part of the transport device of the transport module, and the step is as follows: (b) A step of obtaining shape information of the inner edge of the ring member from the optical data and obtaining the amount of change in the position of the inner edge of the ring member from the shape information, including, Evaluation method for substrate processing systems.

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