Jig for semiconductor manufacturing equipment and method for manufacturing a jig for semiconductor manufacturing equipment

Abstract

To provide a jig for semiconductor manufacturing equipment with excellent plasma corrosion resistance and a method for manufacturing a jig for semiconductor manufacturing equipment. [Solution] A jig for semiconductor manufacturing equipment, comprising a silica glass body containing at least one selected from tantalum, tungsten, and zirconium.

Description

Technical Field

[0001] The present invention relates to a jig for a semiconductor manufacturing apparatus and a method for manufacturing the jig for a semiconductor manufacturing apparatus.

Background Art

[0002] In recent years, machines, devices, containers, etc. used in semiconductor manufacturing processes are required to have heat resistance and plasma corrosion resistance according to the use process. In the manufacture of semiconductors, for example, in the manufacture of semiconductor wafers, it has become important to improve the processing efficiency by using a plasma reactor in an etching process or the like. For example, in the etching process of a semiconductor wafer, an etching process using a plasma gas such as a fluorine (F2)-based plasma gas is performed.

[0003] However, for example, when a conventional quartz chamber is placed in an F2-based plasma gas atmosphere, SiO2 and the F2-based plasma gas react on the surface of the coating film to generate SiF4, and the quartz chamber corrodes, and the surface becomes thin and rough. Therefore, it was not suitable for use as a jig in an F2-based plasma gas atmosphere.

[0004] As described above, the conventional quartz chamber has a problem in corrosion resistance, that is, plasma corrosion resistance, in plasma reactions in semiconductor manufacturing, particularly in etching processes using F2-based plasma gases. Therefore, a quartz jig for a plasma processing apparatus that enables regeneration processing of quartz chamber components has been proposed in order to extend the cleaning and replacement intervals of shield rings that are severely consumed in the chamber of a dry etching apparatus (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, plasma corrosion resistance has not been sufficiently considered in quartz jigs such as those described in Patent Document 1 above. Therefore, even if permanent regeneration is possible, the time span until regeneration treatment is required is short, which presents problems in terms of productivity and economic efficiency.

[0007] This invention has been made in view of the above problems, and the object of this invention is to provide a jig for semiconductor manufacturing equipment with excellent plasma corrosion resistance and a method for manufacturing a jig for semiconductor manufacturing equipment. [Means for solving the problem]

[0008] As a result of diligent research to solve the above problems, the inventors of this invention discovered that high-purity silica containing metal elements has plasma corrosion resistance, and thus arrived at the present invention. That is, the present invention is as follows.

[0009] [1] A jig for semiconductor manufacturing equipment, comprising a silica glass body containing at least one selected from tantalum, tungsten, and zirconium. [2] The semiconductor manufacturing apparatus jig according to [1], wherein the total content of tantalum, tungsten, and zirconium in the silica glass body is 1 ppm by mass to 5000 ppm by mass. [3] Furthermore, the semiconductor manufacturing apparatus jig according to [1] or [2], wherein the maximum thickness of the silica glass body is 0.1 mm to 10 mm. [4] Furthermore, the semiconductor manufacturing apparatus jig according to [1] to [3], wherein the content of metal elements other than transition metal elements in the silica glass body is 100 ppb by mass or less. [5] Furthermore, the semiconductor manufacturing apparatus jig according to [4], wherein the silica glass body contains 100 ppb by mass or less of metallic elements other than tantalum, tungsten, and zirconium. [6] A jig for semiconductor manufacturing equipment as described in [1] to [5], which is one of a chamber, dome, reactor, susceptor, or ring. [7] A method for manufacturing a jig for semiconductor manufacturing equipment, comprising the steps of: producing doped silica powder by doping silica powder with individual metal elements such as tantalum, tungsten, and zirconium, or compounds thereof; and melting the doped silica powder to form a silica glass body. [8] The method for manufacturing a jig for semiconductor manufacturing equipment according to [7], wherein the step of producing the doped silica powder includes a firing step of firing the silica powder in an oxidizing environment at 1000°C to 1500°C. [9] A method for manufacturing a jig for semiconductor manufacturing equipment according to [7] or [8], wherein the purity of the silica powder is 99.9% or higher. [Effects of the Invention]

[0010] According to the present invention, a jig for semiconductor manufacturing equipment with excellent plasma corrosion resistance can be obtained. [Brief explanation of the drawing]

[0011] [Figure 1] Conditions for ion etching (RIE: Reactive Ion Etching) of doped quartz glass plates and ingots obtained in Examples 1-5. [Modes for carrying out the invention]

[0012] The embodiments of the present invention will be described in detail below, but the present invention is not limited to the embodiments described below and can be implemented with various modifications within the scope of its gist.

[0013] 《Jigs for semiconductor manufacturing equipment》 The semiconductor manufacturing apparatus jig according to this embodiment includes a silica glass body containing at least one selected from tantalum (Ta), tungsten (W), and zirconium (Zr). The total content of tantalum, tungsten, and zirconium in the silica glass body is preferably 1 ppm by mass or more, more preferably 3 ppm by mass or more, and even more preferably 5 ppm by mass or more, from the viewpoint of plasma corrosion resistance. There is no particular upper limit to the total content of tantalum, tungsten, and zirconium, but from the viewpoint of silica purity, it is preferably 5000 ppm by mass or less, more preferably 4500 ppm by mass or less, even more preferably 1500 ppm by mass or less, and particularly preferably 100 ppm by mass or less. By including at least one selected from tantalum, tungsten, and zirconium, the tantalum, tungsten, and zirconium react with fluorine radicals to form stable metallic fluorides, forming a thin film on the surface of the silica glass body. This thin film blocks the direct reaction between silica and plasma, thereby improving plasma corrosion resistance. These metal elements may be used individually or in combination of two or more. The metal elements may be distributed locally or throughout the jig for semiconductor manufacturing equipment, but it is preferable that they be distributed throughout the jig from the viewpoint of manufacturing stability and corrosion resistance.

[0014] The silica glass body included in the semiconductor manufacturing apparatus jig according to this embodiment preferably contains 100 mass ppb or less of metal elements other than transition metal elements, more preferably 75 mass ppb or less, and even more preferably 50 mass ppb or less. When the content of metal elements other than transition metal elements is below the upper limit, the etching depth becomes more uniform and particle generation is suppressed compared to silica glass bodies manufactured from raw materials containing many impurities. The lower limit of the content of metal elements other than transition metal elements in the silica glass body is not particularly limited, but from the viewpoint of ease of manufacture, it is preferably 1 mass ppb or more, more preferably 5 mass ppb or more, and even more preferably 10 mass ppb or more.

[0015] Also, it is preferable that the content of metal elements other than tantalum, tungsten, and zirconium contained in the jig for semiconductor manufacturing equipment according to this embodiment is 100 mass ppb or less, more preferably 75 mass ppb or less, and even more preferably 50 mass ppb or less. When the content of transition metal elements is below the upper limit value, compared with a silica glass body manufactured from a raw material containing many impurities, the depth becomes uniform even when etched, and the generation of particles is also suppressed. The lower limit value of the content of metal elements other than tantalum, tungsten, and zirconium in the silica glass body is not particularly limited, but from the viewpoint of ease of manufacture, it is preferably 1 mass ppb or more, more preferably 5 mass ppb or more, and even more preferably 10 mass ppb or more.

[0016] In addition, the content of each metal element containing tantalum, tungsten, and zirconium in this embodiment is measured by ICP - mass and calculated based on the amount of the metal element relative to the amount of the elements constituting the silica glass body of the jig for semiconductor manufacturing equipment.

[0017] The silica glass body contained in the jig for semiconductor manufacturing equipment according to this embodiment may constitute the entire jig for semiconductor manufacturing equipment, but from the viewpoint of cost, it can also be used by forming a layer on the surface exposed to plasma. In that case, from the viewpoint of plasma corrosion resistance, the maximum thickness of the silica glass body is preferably 0.1 mm or more, more preferably 0.5 mm or more, and particularly preferably 1 mm or more. On the other hand, from the viewpoint of cost, the maximum thickness is preferably 10 mm or less, more preferably 5 mm or less, and particularly preferably 3 mm or less.

[0018] When providing a silica glass body for a jig used in a semiconductor manufacturing apparatus, its shape is not particularly limited, and examples include an ingot, a cylindrical shape, a tubular shape, a film shape, etc. It is preferably applied to materials such as semiconductor manufacturing apparatuses, especially chambers, domes, rings, reactors, susceptors, etc. Such components are often exposed to plasma, can particularly exhibit the effect of plasma corrosion resistance, and have little deterioration due to plasma irradiation, etc., so they can be effectively used without replacement for a long time.

[0019] 《Method for Manufacturing a Jig for a Semiconductor Manufacturing Apparatus》 The jig for a semiconductor manufacturing apparatus according to this embodiment can be manufactured by including a step of manufacturing doped silica powder in which at least one of the metal elements tantalum, tungsten, and zirconium alone or its compound is doped into silica powder, and a step of melting the doped silica powder to form a silica glass body. At this time, in addition to the method of processing a single silica glass body into a jig for a semiconductor manufacturing apparatus, it is also possible to form and process a silica glass body on a base material to make it a jig for a semiconductor manufacturing apparatus. Furthermore, while it is also possible to manufacture a single silica glass body by processing it into an ingot, it is also possible to obtain a member with silica glass welded thereon by melting and cooling after installing the silica glass body on the surface of a desired object.

[0020] <Manufacture of Doped Silica Powder> The method for manufacturing a jig for a semiconductor manufacturing apparatus according to this embodiment includes a step of manufacturing doped silica powder. By preparing doped silica powder before making it a jig for a semiconductor manufacturing apparatus, the finally obtained jig for a semiconductor manufacturing apparatus has excellent plasma corrosion resistance characteristics. As a method for manufacturing doped silica powder, for example, granulation, etc. can be considered. The granulation method is not particularly limited, and examples include spray granulation, etc.

[0021] When performing spray granulation, at least one doping material selected from raw material silica powder, tantalum, tungsten, zirconium, or their compound powders is mixed with a solvent, and then a binder is added to form a slurry. The dispersion medium used in slurry formation is usually water, but it is not limited to water, as long as it can be used as a dispersion medium during granulation. Next, spray granulation can be performed using the slurry. Spraying can be done using any known spray (sprayer), and is not particularly limited. The granulated silica powder may be dried, or a spray drying device such as a spray dryer that performs spray drying in one go may be used. When using a spray drying device, the drying temperature is preferably 100°C or higher and 350°C or lower, and more preferably 150°C or higher and 200°C or lower.

[0022] It is preferable to further calcine the silica obtained by granulation. Increasing the calcination temperature can increase the strength of the silica and improve its stability. Lowering the calcination temperature can prevent the silica particles from sticking together. The calcination temperature is preferably 1000°C or higher and 1500°C or lower, more preferably 1050°C or higher and 1300°C or lower, and particularly preferably 1100°C or higher and 1250°C or lower. Calcination is preferably carried out in an oxidizing environment. The method of creating an oxidizing environment is not particularly limited, but examples include creating an oxygen atmosphere using an air atmosphere (oxygen concentration of 20% or higher) supply device. Since increasing the calcination time can increase the strength and improve stability, the calcination time is usually preferably 10 hours or more, and more preferably 30 hours or more. Since shortening the calcination time can save energy and reduce costs, the calcination time is usually preferably 130 hours or less, more preferably 100 hours or less, and even more preferably 60 hours or less. The atmosphere during calcination is not particularly limited, but it is preferable to carry it out in a dry air atmosphere. The dry air preferably has a dew point of -40°C or lower.

[0023] <Dope Silica Powder> The total tantalum, tungsten, and zirconium content of the prepared doped silica powder is preferably adjusted to be similar to the content when it is made into silica glass, preferably 1 ppm by mass or more, more preferably 5 ppm by mass or more, even more preferably 10 ppm by mass or more, and particularly preferably 15 ppm by mass or more. There is no particular upper limit to the total tantalum, tungsten, and zirconium content, but from the viewpoint of silica purity of the resulting silica glass, it is preferably 5000 ppm by mass or less, more preferably 4500 ppm by mass or less, even more preferably 1500 ppm by mass or less, and particularly preferably 100 ppm by mass or less.

[0024] There is no particular upper limit to the average particle size of doped silica powder, but for ease of handling during the melting process when forming a silica glass body, it is generally preferable to have an average particle size of 200 μm or less, and more preferably 150 μm or less. On the other hand, considering the generation of bubbles and the degree of particle dissolution during the melting of the doped silica powder, it is preferable that the average particle size be 5 μm or more, more preferably 10 μm or more, and particularly preferable 50 μm or more. In this embodiment, the average particle size refers to the volume-average particle size, which can be measured, for example, by a laser diffraction / scattering particle size distribution analyzer.

[0025] <Raw material: silica powder> The silica powder used as the raw material is preferably of high purity, with a purity of 99.9% or higher; more preferably 99.99% or higher; and particularly preferably 99.999% or higher. High purity silica powder is less likely to produce residual crystals, contains no chlorine, is less likely to generate bubbles, and, compared to silica glass bodies manufactured with raw materials containing many impurities, results in a more uniform etching depth and suppresses particle generation. The purity of the silica powder is measured and calculated using the same method as the metal element content of the silica glass body described above.

[0026] While there is no particular upper limit to the average particle size of the raw silica powder, it is generally preferable to have an average particle size of 200 μm or less, and more preferably 150 μm or less, in order to efficiently dope with the individual metal elements of tantalum, tungsten, and zirconium, or their compounds. Furthermore, since fine particles are susceptible to static electricity and aggregation, the average particle size of the raw silica powder is preferably 1 μm or more, and particularly preferably 3 μm or more, in order to improve work efficiency and ensure the stability of the doped silica powder manufacturing process. By keeping the average particle size within the above range, appropriate powder fluidity is obtained, and uniform dispersion and mixing of the doping agent becomes easier.

[0027] <Tantalum, tungsten, and zirconium as individual metallic elements, or their compounds> The tantalum, tungsten, and zirconium-containing materials dispersed in the raw silica powder during the doping process include these metal elements themselves or compounds of these metal elements. From the viewpoint of ease of dispersion in the dispersion medium, the metal elements themselves, oxides, or hydrated compounds are preferred, and among these, hydrated compounds are particularly preferred.

[0028] The amount of tantalum, tungsten, and zirconium-containing material used can be adjusted to correspond to the amount of transition metal elements to be included when used as a jig for semiconductor manufacturing equipment.

[0029] <Binder> A binder may be used to bind the particles together during the dispersion of the raw materials. The binder is not particularly limited, and organic binders or inorganic binders can be used. Among these, a hydrophilic organic binder is preferred, for example, polyvinylpyrrolidone.

[0030] The binder is typically used in a ratio of 3 to 10 parts by mass per 100 parts by mass of raw silica powder. Adding the binder improves the strength of the granulated silica powder and reduces the amount of residual silica fine powder, making it possible to recover the granulated silica powder with a high yield of 80% by mass or more.

[0031] <Melting of doped silica powder> By melting the above-mentioned doped silica powder, a silica glass body can be formed, and by using this silica glass body, a jig for semiconductor manufacturing equipment according to this embodiment can be obtained. The melting method is not particularly limited and examples include electromelting and oxyhydrogen burner flame melting. Since silica powder has a softening point of about 1300°C and a melting point of about 1700°C, in any method, it is preferable to raise the temperature of the raw material to 1300°C or higher, and more preferably to 1700°C or higher, from the viewpoint of melting. On the other hand, from the viewpoint of energy saving and cost reduction, it is preferable to raise the temperature of the raw material during melting to 2200°C or lower, and more preferably to 2000°C or lower. Melting by oxyhydrogen burner flame melting is preferable because it improves the dispersibility of the metal and prevents the formation of metal clusters in the silica glass body.

[0032] When melting by electric melting, it can be done using, for example, an electric furnace. Any known electric furnace can be used, and it is not particularly limited. The calcined doped silica powder is melted using an electric furnace. When melting, it is preferable to control the heating temperature to be high and the heating rate to rise slowly, under vacuum. The heating rate is preferably 50°C / h to 300°C / h, and more preferably 150°C / h to 250°C / h. By performing the melting under these conditions, bubbles are less likely to form, it melts easily, and a transparent silica glass body is obtained.

[0033] When melting with an oxyhydrogen burner flame, for example, a burner having multiple supply pipes for supplying gas or powder can be used. It is preferable that the supply pipe closest to the center of the burner cross-section is the supply pipe for doped silica powder, because the doped silica powder blown out together with the carrier gas is stably melted by the guiding effect of the combustion flame of the surrounding oxygen and hydrogen gases.

[0034] One method for supplying doped silica powder to the burner is to use a feed device. By creating positive pressure in the powder hopper with a carrier gas, the doped silica powder is drawn out along with the carrier gas. The carrier gas used to supply the doped silica powder is not particularly limited, but from the viewpoint of supply stability, it is preferable to use compressed air, nitrogen, oxygen, etc., and it is especially preferable to use compressed air or nitrogen.

[0035] The supply rate of doped silica powder from the burner is preferably 0.1 g / min to 6 g / min per burner, and more preferably 0.2 g / min to 5.5 g / min. A rate of 0.1 g / min or higher is excellent in terms of productivity in obtaining a coating film, while a rate of 6 g / min or lower is less likely to produce undissolved powder. [Examples]

[0036] The present invention will now be described in more detail with reference to examples, but the present invention is not limited to these examples.

[0037] <Manufacturing of doped silica powder> A slurry was prepared by mixing raw silica powder, polyvinylpyrrolidone as a binder, and ultrapure water, and then adding and mixing one of the following: tantalum oxide powder, zirconium oxide powder, or ammonium tungstate-para-pentahydrate. The particle size of the raw silica powder was 10 μm or less, and its purity was 99.999% or higher. The binder, polyvinylpyrrolidone, was used at a ratio of 5 parts by mass per 100 parts by mass of raw silica powder. The amount of tantalum, tungsten, and zirconium-containing materials was adjusted to the amount that would be contained in doped silica powder per 100 parts by mass of raw silica powder. Ultrapure water was added in an amount that resulted in a slurry with a raw silica powder content of 30% by mass. After mixing the silica powder and binder with ultrapure water as described above, the metal oxide powder was mixed in to form a slurry.

[0038] Spray granulation was performed using the aforementioned slurry. The slurry was dispersed in a mist form by a high-speed rotating disk made of silicon nitride. The disk rotation speed was adjusted to 8000 rpm. The dispersed droplets were exposed to hot air at 150°C, and the water in the droplets evaporated, causing them to dry instantly and become solid particles. The particles formed during this drying granulation process were collected by a dust collector under exhaust temperature conditions of 80°C. The particles collected by the dust collector were removed from the dust collector and collected as dried granulated silica particles. The recovered granulated silica was further calcined in an electric furnace at 1200°C in a dry air atmosphere. The calcination time was 113 hours. Through these operations, doped silica powders with different doping concentrations were obtained using powders containing either tantalum, tungsten, or zirconium.

[0039] <Measurement of particle size distribution of doped silica powder> A slurry was prepared by mixing doped silica powder with ultrapure water at a ratio of 10 parts by mass per 100 parts by mass. Before measurement, the slurry was treated with ultrasound for 60 seconds. Using a laser diffraction / scattering particle size distribution analyzer (Microtrac), 1 mL of the slurry was taken, and the volume-average particle size of the doped silica powder was measured.

[0040] [Example 1] A natural quartz glass plate measuring 195 mm in length, 40 mm in width, and 5 mm in thickness (99.999% purity) and Ta-doped silica powder (containing 5 ppm by mass of Ta, with an average particle size of 80 μm) were prepared. The Ta-doped silica powder was sprayed onto one side of the natural quartz glass plate to a thickness of 5 mm using an oxyhydrogen burner, forming a Ta-doped silica glass body. Grinding and polishing were performed to smooth the surface in order to properly evaluate the etching corrosion resistance described later. Finally, a quartz glass plate measuring 40 mm in length, 40 mm in width, was fabricated with a natural quartz glass portion thickness of 5 mm and a Ta-doped silica glass body thickness of 3 mm.

[0041] [Example 2] A quartz glass plate measuring 40 mm in length and 40 mm in width was prepared in the same manner as in Example 1, except that Zr-doped silica powder (containing 5 ppm by mass of Zr and having an average particle size of 80 μm) was used, with the natural quartz glass portion having a thickness of 5 mm and the Zr-doped silica glass portion having a thickness of 3 mm.

[0042] [Example 3] A quartz glass plate measuring 40 mm in length and 40 mm in width was prepared in the same manner as in Example 1, except that a W-doped silica powder (containing 5 ppm by mass of W and with an average particle size of 80 μm) was used, with the natural quartz glass portion having a thickness of 5 mm and the W-doped silica glass portion having a thickness of 3 mm.

[0043] [Example 4] A natural quartz tube and W-doped silica powder with four different W content levels (containing 5 ppm, 10 ppm, 100 ppm, and 1000 ppm of W, respectively, with an average particle size of 80 μm) were used. 50 g of the doped silica powder was placed inside a natural quartz tube with an inner diameter of 15 mm, a wall thickness of 2 mm, and a length of 800 mm. The powder was melted at 1700°C in a vertical electric furnace (manufactured by Crystal Systems Co., Ltd.) under vacuum to form a doped ingot containing W-doped silica glass. The doped ingot was cut (to a length of 8 mm) and polished to produce a doped ingot with an inner diameter of 15 mm and a length of 7 mm. A total of four ingots were produced, with W concentrations of 5 ppm, 10 ppm, 100 ppm, and 1000 ppm, respectively.

[0044] [Example 5] A natural quartz tube and four types of Ta-doped silica powder (silica powder containing 5 ppm, 10 ppm, 100 ppm, and 1000 ppm of Ta, with an average particle size of 80 μm) were used. The doped silica powder was electromelted under the same conditions as in Example 4 to form a doped ingot containing a Ta-doped silica glass body. The doped ingot was cut (to a length of 8 mm) and polished to produce a doped ingot with an inner diameter of 15 mm and a length of 7 mm. A total of four ingots were produced, with Ta concentrations of 5 ppm, 10 ppm, 100 ppm, and 1000 ppm, respectively.

[0045] [Comparative Example 1] A quartz glass plate measuring 40 mm in length and 40 mm in width was prepared in the same manner as in Example 1, except that the raw silica powder before doping was used, with the natural quartz glass portion being 5 mm thick and the undoped silica glass portion being 3 mm thick.

[0046] [Comparative Example 2] An ingot containing an undoped silica glass body was prepared in the same manner as in Example 4, except that raw silica powder before doping was used. The obtained ingot was cut (to a length of 8 mm) and polished to produce an undoped ingot with an inner diameter of 15 mm and a length of 7 mm.

[0047] <Etching corrosion resistance evaluation> A silicon wafer was placed in a parallel plate reactive ion etching (RIE) apparatus, and as shown in Figure 1, the quartz glass plates prepared in Examples 1-5 and Comparative Examples 1-2 were placed on the silicon wafer. The untreated areas of each quartz glass plate were covered with Kapton tape, and etching was performed for 100 minutes under the conditions of gas type CHF3, ICP power 200W, pressure 1.8Pa, and flow rate 30sccm. After 100 minutes of etching, a portion of the 100min area of ​​each quartz glass plate was covered with Kapton tape (this covered area became the 100min area), and etching was performed for another 100 minutes under the same conditions (this treated area became the 200min area).

[0048] Using a laser microscope, the thickness of the quartz glass plate before and after etching was measured at the 200min area, the 100min area, and the untreated area. The etching depth and etching rate were calculated from the difference between the 200min area, the 100min area, and the untreated area, using the average value for each treated area. The results are shown in Table 1.

[0049] [Table 1]

[0050] [Table 2]

[0051] [Table 3]

[0052] As can be seen from Tables 1-3, the quartz glass plates containing silica glass bodies doped with each metal obtained in the examples had a shallower etching depth than the quartz glass plates containing silica glass bodies that were not doped with each metal element obtained in the comparative examples. Furthermore, the etching rate of the quartz glass plates obtained in the examples was lower than that of the quartz glass plates obtained in the comparative examples. The etching rate varied depending on the doping concentration, but at all concentrations, the etching rate was kept lower than that of the quartz glass plates obtained in the comparative examples. Increasing the doping amount in silica glass reduces the etching rate and makes surface maintenance easier. However, excessive doping concentration can negatively affect etching properties. For example, at high concentrations, the doped metal may form clusters during the melting process, resulting in non-uniform dispersion within the silica. This can complicate the etching reaction and impair etching uniformity. On the other hand, when doped silica glass is fabricated using the oxyhydrogen burner method, the dispersibility of the metal is improved and cluster formation is prevented, resulting in excellent etching resistance. Thus, etching properties depend not only on the doping amount but also strongly on the fabrication process. As the concentration increases, the etching rate tends to fluctuate more easily. Therefore, within the range of 1 ppm to 5000 ppm, it is possible to maintain a good balance between etching depth and etching rate. In particular, the range of 3 ppm to 1500 ppm is more suitable when stable etching is required. Furthermore, for specific applications where even greater stability of etching depth and rate is needed, the range of 5 ppm to 100 ppm is a preferred choice. Since the above-described examples exhibit excellent plasma corrosion resistance, it can be concluded that the chambers, domes, reactors, susceptors, and rings using the silica glass material of the examples also exhibit excellent plasma corrosion resistance.

Claims

1. A jig for semiconductor manufacturing equipment, comprising a silica glass body containing at least one selected from tantalum, tungsten, and zirconium.

2. The semiconductor manufacturing apparatus jig according to claim 1, wherein the total content of tantalum, tungsten, and zirconium in the silica glass body is 1 ppm by mass to 5000 ppm by mass.

3. Furthermore, the semiconductor manufacturing apparatus jig according to claim 1 or 2, wherein the maximum thickness of the silica glass body is 0.1 mm to 10 mm.

4. Furthermore, the semiconductor manufacturing apparatus jig according to claim 1 or 2, wherein the content of metal elements other than transition metal elements in the silica glass body is 100 ppb by mass or less.

5. Furthermore, the semiconductor manufacturing apparatus jig according to claim 4, wherein the silica glass body contains 100 ppb by mass or less of metallic elements other than tantalum, tungsten, and zirconium.

6. A jig for semiconductor manufacturing equipment according to claim 1 or 2, which is a chamber, dome, reactor, susceptor, or ring.

7. A method for manufacturing a jig for semiconductor manufacturing equipment, comprising the steps of: producing doped silica powder by doping silica powder with individual metal elements such as tantalum, tungsten, and zirconium, or compounds thereof; and melting the doped silica powder to form a silica glass body.

8. The method for manufacturing a jig for semiconductor manufacturing equipment according to claim 7, wherein the step of producing the doped silica powder includes a firing step of firing the silica powder in an oxidizing environment at 1000°C to 1500°C.

9. The method for manufacturing a jig for semiconductor manufacturing equipment according to claim 7 or 8, wherein the purity of the silica powder is 99.9% or higher.

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