LED device and method for manufacturing an LED device
By integrating a porous region in the LED structure, the lattice mismatch issue is addressed, enabling high-indium content InGaN layers for long-wavelength emission with reduced strain and defects, enhancing LED performance and wavelength shift.
JP2026113572APending Publication Date: 2026-07-07ポロ テクノロジーズ リミテッド
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ポロ テクノロジーズ リミテッド
- Filing Date
- 2026-04-01
- Publication Date
- 2026-07-07
AI Technical Summary
Technical Problem
Manufacturing LEDs that emit light at long wavelengths, such as green, yellow, and red, is challenging due to lattice mismatch between InGaN and GaN, leading to strain and defects that degrade device performance.
Method used
Incorporating a porous region of Group III nitride material into the LED structure to reduce strain and align the lattice, allowing for higher indium incorporation and longer wavelength emission.
Benefits of technology
The porous region reduces strain, enabling the growth of high-quality InGaN layers with increased indium content, resulting in improved LED performance and shifted emission wavelengths without spectral broadening.
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Smart Images
Figure 2026113572000001_ABST
Abstract
This invention provides a light-emitting diode (LED) containing a porous region of a group III nitride material and a method for manufacturing the same. [Solution] The LED includes an n-doped portion, a p-doped portion, and a light-emitting region disposed between the n-doped portion and the p-doped portion. The light-emitting region includes a light-emitting layer that emits light at a peak wavelength of 400-599 nm under electrical bias, a group III nitride layer disposed on the light-emitting layer, and a group III nitride barrier layer disposed on the group III nitride layer. The light-emitting diode includes a porous region of group III nitride material. An array of LEDs and a method for manufacturing LEDs having a peak emission wavelength of 400 nm-599 nm under electrical bias are also provided.
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